CN102610711A - Method for manufacturing LED chip - Google Patents
Method for manufacturing LED chip Download PDFInfo
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- CN102610711A CN102610711A CN2011103295557A CN201110329555A CN102610711A CN 102610711 A CN102610711 A CN 102610711A CN 2011103295557 A CN2011103295557 A CN 2011103295557A CN 201110329555 A CN201110329555 A CN 201110329555A CN 102610711 A CN102610711 A CN 102610711A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 title abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 230000001678 irradiating effect Effects 0.000 claims abstract description 13
- 238000000576 coating method Methods 0.000 claims description 53
- 239000011248 coating agent Substances 0.000 claims description 51
- 238000013459 approach Methods 0.000 claims description 17
- 238000005520 cutting process Methods 0.000 claims description 17
- 229910052594 sapphire Inorganic materials 0.000 claims description 17
- 239000010980 sapphire Substances 0.000 claims description 17
- 238000002310 reflectometry Methods 0.000 claims description 5
- 230000035515 penetration Effects 0.000 claims description 4
- 230000011218 segmentation Effects 0.000 abstract description 8
- 239000000463 material Substances 0.000 description 23
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000003754 machining Methods 0.000 description 7
- 230000004927 fusion Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000002679 ablation Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- 238000003475 lamination Methods 0.000 description 4
- 238000000608 laser ablation Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 208000037656 Respiratory Sounds Diseases 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000000985 reflectance spectrum Methods 0.000 description 2
- 241000937378 Everettia interior Species 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
- Laser Beam Processing (AREA)
- Led Devices (AREA)
Abstract
The present invention provides a method for manufacturing an LED chip, which comprises the steps of irradiating a laser beam L on a motherboard (1) along a predetermined dividing line so as to form a segmentation starting point A for each LED element body (2), wherein the front surface (1a) of the translucent substrate (1) is formed with a plurality of LED element bodies (2) arranged in a pattern and the back surface (1b) of the translucent substrate (1) is formed with a reflection film (3).
Description
Technical field
The present invention relates to a kind of manufacturing approach of led chip; This led chip has following structure: on the interarea (as face side) of a side of light-transmitting substrate, forming and producing the LED element that sends light, having the reflectance coating that this is sent this character of light reflection and go up to form at another interarea (as rear side).
Background technology
On the shaped like chips sapphire substrate, forming the led chip that comprises the semi-conductive LED element body of III nitride for being configured to, formal productization that for example can blue series LED (LED).
Recently; Utilize following led chip; It is in order to improve the efficient of obtaining of sending light from led chip; Form metallic reflective coating in the rear side of sending the permeable light-transmitting substrate of light (sapphire substrate etc.), not only effectively utilize the light that sends from the direct outgoing of LED element body, and effectively utilized temporarily incide in the substrate and pass substrate once more after the metallic reflective coating reflection by rear side and outgoing send light (with reference to patent documentation 1).
Fig. 6 is that the GaN of the typical case of the rear side that the is illustrated in light-transmitting substrate led chip that forming reflectance coating is the cross-sectional configuration figure of LED.
On first interarea (surface) of sapphire substrate 10, forming semiconductor lamination structure, this semiconductor lamination structure comprises following two zones: in the zone successively lamination GaN resilient coating 12, n type GaN layer 13, n type AlGaN layer 14, the luminescent layer 15 that comprises GaInN, p type AlGaN layer 16, and p type GaN layer 17; In another zone, the some of n type AlGaN layer 14, luminescent layer 15, p type AlGaN layer 16, p type GaN layer 17 is removed through etching, till the part of n type GaN layer 13 is exposed.Outer peripheral face at this semiconductor lamination structure is forming SiO except that electrode forms part
2Film 18 is as insulating protective film.And, on p type GaN layer 17, forming light transmission p type electrode 19 (Au film), on n type GaN layer 13, forming n type electrode 20 (Ti/Al/Au film).
On second interarea (rear side) of sapphire substrate 10, forming reflectance coating 11.What reflectance coating 11 used is for the material that light wavelength has good reflection characteristic that sends from luminescent layer 15, specifically, is for example forming layer of Au film, thus, sends light to sapphire substrate 10 lateral reflections with what desire was passed from the back side.
In addition, in the reflectance coating 11, consider the characteristics of luminescence and the material cost of LED element, except the Au film, also use Al film or dielectric multilayer film material as reflectance coating.That is to say that according to the kind and the thickness of the semi-conducting material of LED element body, emission wavelength zone (luminescent spectrum) is different, therefore, can select the use material good with LED (commodity) corresponding to element to the reflection characteristic of emission wavelength.For example, when utilization is coated on the fluorescent materials light beam of periphery, also considers this influence and select material.Specifically; If the White LED (White LED that comprises fluorescent material and blue led; The White LED that perhaps comprises RGB3 wavelength fluorescent material and violet source), then use the i.e. interior reflectivity excellent dielectric multilayer film of wavelength region may of about 350nm～800nm of visible wavelength sometimes.On the other hand, when paying the utmost attention to material cost, can use the Al film.
Rear side is forming the led chip of reflectance coating and is making through following manufacturing step.That is to say, with the sapphire substrate of wafer-like as motherboard, at first; Go up with cancellate pattern formation LED element body at first interarea (surface) of motherboard; Then, grinding back surface after the required thickness, is formed reflectance coating (element formation step) at second interarea (back side) of motherboard.After this, in order to cut apart,, sapphire substrate takes out (chip segmentation procedure) as led chip (product) thereby being divided into shaped like chips to each LED element body.
Here, describe about the chip division processing that is divided into each led chip from motherboard.Generally speaking; In the manufacturing step of led chip; Also the same with other semiconductor products, when motherboard is divided into each chip, implement to utilize cutter (dicer; Dicer), the machining of diamond scribe (diamond scriber) etc., any laser processing and the cutting apart of carrying out of perhaps implementing to utilize the irradiating laser light beam.
Wherein, Use the mechanical marking of machining tools such as cutter or diamond scribe to process when cutting apart motherboard when utilization; Because sapphire be than glass etc. hard the fragile material of Duoing; So the machining tool easy abrasion, and on the divisional plane of processing, except required crackle (crack), also be easy to generate the chip (chipping) that can cause product bad.
On the other hand, when utilizing high output such as YAG laser pulse laser (pulsewidth 10
-9～10
-7When motherboard was cut apart in laser processing second), adopting techniques known was that laser ablation (LaserAblation) or multi-photon absorption are cut apart.That is to say; With laser beam converge near the substrate surface or substrate inner; Produce ablation and the formation groove near making substrate surface; Or utilize multi-photon to absorb and in the inner rotten portion of processing that forms of substrate, thereby these processing parts are become be used to break off cut apart starting point (with reference to patent documentation 2, patent documentation 3).
Yet, be that sapphire adds man-hour when utilizing laser to hard brittle material, ablating, under multi-photon any situation in absorbing, all need make irradiation energy be higher than the irradiation energy that glass etc. is added man-hour.As a result, add man-hour when utilizing to ablate, the groove width of formation broadens.When absorbing by means of multi-photon when the rotten portion of the inner processing of substrate is set, rotten position also broadens, and the surface roughness chap of the formed divisional plane in rotten position, the divisional plane that may not obtain to have good precision.
Therefore, proposing to use pulsewidth is 10
-10(following be 10 with pulsewidth to ultra-short pulse laser below second
-10Second below pulse laser be called " ultra-short pulse laser ") new laser processing (being also referred to as the BI method in this following specification) (with reference to patent documentation 4).Therefore, use Nd:YAG laser (wavelength 1064nm), the adjustment focus penetrates it, so that have the near surface that the ultra-short pulse laser of extremely short pulsewidth and high power density converges in sapphire substrate.The laser beam of this moment is not absorbed by baseplate material (sapphire) beyond near focal point, but causes that on focal point multi-photon absorbs, thus moment and produce fusion, distillation (local small ablation) partly.And, to the scope on surface, form fine crack at the position, top layer of substrate.That is to say; In the conventional ablation; Nearly all energy that laser beam produced of irradiation all by the fusion of baseplate material, rising spent, is used to form big ablation hole (aperture is about 8 μ m), and in the new laser processing (BI method); Only some is spent by the formation of small fusion trace (aperture is the aperture about 1 μ m) for the energy of irradiating laser, and remaining energy then expends as the impulsive force that forms fine crack.As boring a hole, form said dissolving trace dispersedly along predetermined cut-off rule, thus, the easily separated zone that is formed by connecting with small crackle between the dissolving trace of formation adjacency, thus can be along this Region Segmentation substrate.
[look-ahead technique document]
[patent documentation]
[patent documentation 1] japanese patent laid-open 10-308532 communique
[patent documentation 2] japanese patent laid-open 11-177137 communique
[patent documentation 3] Japanese Patent Laid is opened the 2004-268309 communique
[patent documentation 4] Japanese Patent Laid is opened the 2005-271563 communique
Summary of the invention
[inventing problem to be solved]
In the chip segmentation procedure in LED makes, can use laser ablation processing, utilize the laser processing that multi-photon absorbs, the new laser processing (BI method) that utilizes ultra-short pulse laser, to this, preceding text are explained.
Yet; When the motherboard that rear side is being formed reflectance coating is cut apart and when cutting led chip, if desire utilizes laser processing mentioned above to cut apart, then had reflectance coating because of rear side; Event can cause laser beam to be reflected or absorb, thereby becomes the obstacle in the processing.
As a kind of dividing method that utilizes laser radiation; Can not be from rear side but from forming the face side irradiating laser of LED element body, still, the luminous of the laser beam of irradiation can influence the LED element body equally; The problem that generation causes the luminous efficiency of LED element self to descend; Therefore, from keeping the viewpoint of luminous efficiency, hope from the rear side irradiating laser.
And; In present LED manufacturing step; From the viewpoint of this practicality of material cost, what reflectance coating used is the Al film, and from compare with material cost more pay attention to sending light obtain this viewpoint of efficient; Studied the use of comparing with the Al film for materials such as better Au film of the reflection characteristic of emission wavelength or dielectric multilayer films, but do not gone out to send to consider the preferably any film of reflectance coating from the viewpoint of chip segmentation procedure.
Therefore; When forming from the rear side irradiating laser when cutting apart starting point, at first, remove (peeling off) reflectance coating and motherboard is exposed with band shape along predetermined cut-off rule for being configured to motherboard that side overleaf forming reflectance coatings such as Al film; Then, from the rear side of motherboard to exposed portions serve irradiating laser light beam.
At this moment; Need along predetermined cut-off rule utilization by the pattern that photoetching process (photolithography) forms peel off, perhaps with the illuminate condition that is used to remove reflectance coating (with hereinafter described to be used to form the laser radiation of cutting apart starting point different) be used to remove the laser ablation of reflectance coating; Under any situation; All need be the step that clathrate is removed (peeling off) reflectance coating along predetermined cut-off rule in addition, thereby become the essential factor that causes machining period to increase.
Therefore, the object of the present invention is to provide the manufacturing approach of a kind of LED, wherein form from the rear side irradiating laser when cutting apart starting point when the motherboard that is forming reflectance coating for the back side, need not to remove reflectance coating along predetermined cut-off rule in addition in advance.
[technological means of dealing with problems]
In the manufacturing approach of reaching the led chip of the present invention that said purpose forms; Thereby comprise the starting point of cutting apart that is formed for being divided into each LED element body for motherboard along predetermined cut-off rule irradiating laser light beam; In this motherboard; Face side at light-transmitting substrate is forming a plurality of LED element bodies with pattern, and side comprises that the position on the predetermined cut-off rule is forming reflectance coating overleaf, and said manufacturing approach comprises following formation.
That is to say; Side forms reflectance coating overleaf; And; So that laser beam shines directly into the mode of substrate back behind the rear side penetration film substrate is carried out laser processing, said reflectance coating has following character: the light wavelength scope of sending that the LED element body is sent (preferred and then be wave-length coverage) reflection from the fluorescent materials light beam, and the wavelength light that is radiated at the laser beam on the predetermined cut-off rule is seen through.
Here, light-transmitting substrate also can be sapphire substrate.
In addition, also can be, the reflectivity of reflectance coating in the visible region of 400nm～700nm is more than 90%, is more than 50% in the transmitance of the region of ultra-red more than the 900nm.
Specifically, reflectance coating also can be formed by dielectric multilayer film.
In addition, as laser beam, can shine the pulse laser of the 1064nm that Nd:YAG laser produced.
And then, as pulse laser, also can pulsewidth be shorter than 10
-10Thereby shining to form along predetermined cut-off rule dispersedly, the ultra-short pulse laser of second cuts apart starting point.
Here; So-called " irradiation dispersedly " is meant the irradiation across the interval that is described below; That is, utilize new laser processing (BI method) to shine dispersedly, thus across distance; Form small fusion trace (aperture is the aperture about 1 μ m) across the interval, but formed fine crack is connected with each other between the fusion trace of adjacency.That is to say, form that therefore, the mode that constantly moves ahead with crackle is induced and processed with fusion trace and the continuous mode of fine crack.
As stated, as perforation, form said dissolving trace dispersedly along predetermined cut-off rule, thus, the easily separated zone that links to each other with fine crack between the dissolving trace of formation adjacency, thus substrate can be along this Region Segmentation.
[effect of invention]
Manufacturing approach according to led chip of the present invention; The optical characteristics that reflectance coating had as the rear side that is formed on the permeability substrate that sends light transmission that makes the LED element; Has following character: can the light of the wavelength region may of LED element body and fluorescent material be reflected; And the wavelength light that is radiated at the laser beam on the predetermined cut-off rule is seen through; Thus, when along predetermined cut-off rule irradiating laser, if from rear side shine then laser beam can the penetration film and direct irradiation on substrate.
That is to say; Be to make laser beam irradiation on substrate through removing reflectance coating in advance before; But when side was provided with under the state of reflectance coating irradiating laser overleaf, laser beam also can arrive substrate back, identical laser processing in the time of can carrying out with non reflecting film in fact.
Thus, in the manufacturing of led chip, need not the step of removing reflectance coating, thereby can reduce machining period along predetermined cut-off rule with backside reflection film.
Description of drawings
Fig. 1 (a) and (b) are the graphic of the face side that the is illustrated in motherboard state that forming the LED element body.
Fig. 2 (a) and (b) are the graphic of the rear side that is illustrated in the motherboard that is forming the LED element body state that forming reflectance coating.
Fig. 3 is desirable reflectance spectrum graphic of expression reflectance coating.
Fig. 4 is the graphic of the machining state of expression when utilizing laser radiation that motherboard is divided into each led chip.
Fig. 5 is that expression is broken off state graphic of processing along cutting apart starting point.
Fig. 6 is the sectional view of an example of the structure of expression LED element body.
[explanation of symbol]
A focal position (cutting apart starting point)
The L laser beam
1 light-transmitting substrate (sapphire substrate)
The 1a face side
The 1b rear side
2 LED element bodies
3 reflectance coatings
4 laser (Nd:YAG laser)
5 break off rod
6a, 6b support stick
Embodiment
Below, be example to use the semi-conductive led chip of III nitride, according to the graphic manufacturing step that specifies led chip of the present invention successively.The manufacturing approach of led chip of the present invention comprises that mainly element forms step and these two steps of chip segmentation procedure.
(element formation step)
Element forms in the step, form a plurality of LED element bodies in the face side (the first interarea side) of motherboard with pattern, and side (the second interarea side) forms reflectance coating overleaf.
Fig. 1 is the graphic of the face side that the is illustrated in motherboard state that forming the LED element body, and Fig. 1 (a) is vertical view (plane graph of face side), and Fig. 1 (b) is a front view.Motherboard 1 comprises the sapphire substrate of wafer shape, and the mode that goes up to form square lattice at surperficial 1a (first interarea) is formed with regularly arranged in length and breadth a plurality of LED element bodies 2 with pattern.Each LED element body 2 has component construction shown in Figure 6, and is formed by known semiconductor fabrication process.
And, between the element body 2 of adjacency, being provided with the gap, said gap becomes predetermined cut-off rule when cutting apart to each LED element body.
As the sapphire of motherboard 1 is that (350nm～800nm) has the material of light transmission for the luminous wavelength region may of LED element body 2.In addition, so long as the material that has light transmission for the emission wavelength zone of LED element body 2 then also can use the material beyond the sapphire substrate to be used as substrate.When LED element body 2 is not white light-emitting diode but monochromatic light light-emitting diode, as long as be not for whole visible region but have light transmission for corresponding monochromatic emission wavelength.
Fig. 2 is the graphic of the rear side that is illustrated in the motherboard 1 that is forming LED element body 2 state that forming reflectance coating, and Fig. 2 (a) is upward view (plane graph of rear side), and Fig. 2 (b) is a front view.Whole rear side 1b at motherboard 1 is forming reflectance coating 3.
As reflectance coating 3, can use to have and optionally reflect sending light and making the wavelength light that is radiated at the laser beam on the predetermined cut-off rule see through the material of this character of LED element body 2.As laser beam, using the above wavelength light of 900nm usually is infrared laser (YAG laser, YVO laser etc.), the reflecting material that therefore can use the above infrared wavelength zone of 900nm to see through.
Specifically, preferably use following reflectance coating, its for example with the light of the wavelength region may of 400nm～700nm with the reflection of the reflectivity more than 90%, and Nd:YAG Wavelength of Laser light (1064nm) is seen through with the transmitance more than 50%.
Fig. 3 is desirable reflectance spectrum graphic of expression reflectance coating 3.
The reflectance coating that approaches said characteristic can be formed by dielectric multilayer film.
(chip segmentation procedure)
Then, the motherboard that is forming LED element body 2 and reflectance coating 3 is divided into each led chip.
Fig. 4 is the graphic of the machining state of expression when utilizing laser radiation that motherboard is divided into each led chip.
Use the Nd:YAG pulse laser as laser 4; Under the condition of the second sweep speed 50mm/ on wavelength 1064nm, pulsewidth 20 psecs, pulse energy 0.1 μ J～50 μ J, repetition rate 10KHz～200KHz, predetermined cut-off rule direction second～3000mm/, the 1b side irradiation ultrashort laser light beam from the back side.In addition,, take into account repetition rate as sweep speed, with the interval (irradiation spacing) of last irradiation position be 3 μ m～20 μ m.
And, by laser 4 built-in lens optical system (not shown) adjustment focus so that the focal position of depth direction converges in than substrate back side 1b slightly near the inboard position A (cutting apart starting point) of substrate.
If irradiating laser in this way; Then laser beam L meeting penetration film 3 directly arrives the focal position of motherboards 1 and plays a role; Process through motherboard 1 is moved on the one hand, interval that can 3 μ m～20 μ m forms aperture dispersedly, forms fine crack between the Kong Yukong of adjacency; Whereby, form as the processing line (line line) of cutting apart starting point.Cancellate predetermined cut-off rule along all repeats identical processing, thereby is formed for being divided into the starting point of cutting apart of each LED element body.
Fig. 5 is that expression is for forming state graphic that the motherboard 1 of cutting apart starting point breaks off processing.
Make and break off the position P1 that the position face side in opposite directions of starting point A formation was aimed at and cut apart to rod 5; And; Make support stick 6a, 6b overleaf side aim at the position P2, the P3 that are positioned at its left and right sides with cutting apart that starting point A leaves mutually; Thereby apply bending moment with 3 point-supported states, break off along predetermined cut-off rule thus.Then, carry out identical disconnection processing, may be partitioned into each led chip thus along all starting points of cutting apart.
Therefore, according to the present invention, after forming reflectance coating 3, can not peel off reflectance coating 3, but at once motherboard self is carried out laser processing along predetermined cut-off rule.
In the said execution mode, be to utilize the irradiation ultra-short pulse laser to carry out chip to cut apart, but also can adopt conventional ablation processing, the processing that perhaps utilizes multi-photon to absorb.Under these situation, can not peel off the reflectance coating that is formed on rear side, but carry out laser processing at once along subscribing cut-off rule.
[usability in the industry]
The present invention can be used to make the led chip that substrate back is forming reflectance coating.
Claims (8)
1. the manufacturing approach of a led chip; It is characterized in that: thus comprise the step of cutting apart starting point that is formed for being divided into each LED element body for motherboard along predetermined cut-off rule irradiating laser light beam; In this motherboard, forming a plurality of LED element bodies with pattern, and side comprises that the position on the predetermined cut-off rule is forming reflectance coating overleaf in the face side of light-transmitting substrate; In the manufacturing approach of this led chip
Side forms reflectance coating overleaf, and said reflectance coating has from the light wavelength scope of the sending reflection of said LED element body and the character that the wavelength light that is radiated at the laser beam on the predetermined cut-off rule is seen through, and
So that said laser beam carries out laser processing from the mode of rear side penetration film direct irradiation on substrate back to substrate.
2. the manufacturing approach of led chip as claimed in claim 1, wherein light-transmitting substrate is a sapphire substrate.
3. the manufacturing approach of led chip as claimed in claim 1, the reflectivity of wherein said reflectance coating in the visible region of 400nm～700nm is more than 90%, is more than 50% in the transmitance of the region of ultra-red more than the 900nm.
4. the manufacturing approach of led chip as claimed in claim 2, the reflectivity of wherein said reflectance coating in the visible region of 400nm～700nm is more than 90%, is more than 50% in the transmitance of the region of ultra-red more than the 900nm.
5. the manufacturing approach of led chip as claimed in claim 3, wherein said reflectance coating is to be formed by dielectric multilayer film.
6. the manufacturing approach of led chip as claimed in claim 4, wherein said reflectance coating is to be formed by dielectric multilayer film.
7. like the manufacturing approach of each the described led chip in the claim 1～6, the pulse laser of the 1064nm that is wherein produced as laser beam irradiation Nd:YAG laser.
8. the manufacturing approach of led chip as claimed in claim 7 wherein as pulse laser, is shone pulsewidth dispersedly along predetermined cut-off rule and is shorter than 10
-10The ultra-short pulse laser of second.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011012547A JP5548143B2 (en) | 2011-01-25 | 2011-01-25 | LED chip manufacturing method |
| JP2011-012547 | 2011-01-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102610711A true CN102610711A (en) | 2012-07-25 |
| CN102610711B CN102610711B (en) | 2015-04-08 |
Family
ID=46527963
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110329555.7A Expired - Fee Related CN102610711B (en) | 2011-01-25 | 2011-10-24 | Method for manufacturing LED chip |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5548143B2 (en) |
| KR (1) | KR101390115B1 (en) |
| CN (1) | CN102610711B (en) |
| TW (1) | TWI447964B (en) |
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| KR102152007B1 (en) * | 2020-03-18 | 2020-09-04 | 주식회사 탑 엔지니어링 | Method and apparatus for cutting substrate |
| CN113695748B (en) * | 2021-08-23 | 2022-10-25 | 西安交通大学 | Rapid preparation method of sharkskin surface structure based on spatial light modulator |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10270754A (en) * | 1997-03-24 | 1998-10-09 | Sanyo Electric Co Ltd | Semiconductor light-emitting device and light-emitting lamp |
| US5858458A (en) * | 1995-06-10 | 1999-01-12 | Pilkington United Kingdom Limited | Mirrors and their production |
| CN100471609C (en) * | 2000-09-13 | 2009-03-25 | 浜松光子学株式会社 | Laser processing method and laser processing apparatus |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3769872B2 (en) * | 1997-05-06 | 2006-04-26 | ソニー株式会社 | Semiconductor light emitting device |
| JP3604550B2 (en) * | 1997-12-16 | 2004-12-22 | 日亜化学工業株式会社 | Method for manufacturing nitride semiconductor device |
| JP3895287B2 (en) * | 2003-03-06 | 2007-03-22 | 弘明 三澤 | Method and apparatus for dividing sapphire substrate |
| JP4279631B2 (en) * | 2003-08-20 | 2009-06-17 | 三菱化学株式会社 | Nitride semiconductor device manufacturing method |
| JP2005271563A (en) * | 2004-03-26 | 2005-10-06 | Daitron Technology Co Ltd | Dividing processing method of hard and brittle plate and apparatus for it |
-
2011
- 2011-01-25 JP JP2011012547A patent/JP5548143B2/en not_active Expired - Fee Related
- 2011-09-06 TW TW100132143A patent/TWI447964B/en not_active IP Right Cessation
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5858458A (en) * | 1995-06-10 | 1999-01-12 | Pilkington United Kingdom Limited | Mirrors and their production |
| JPH10270754A (en) * | 1997-03-24 | 1998-10-09 | Sanyo Electric Co Ltd | Semiconductor light-emitting device and light-emitting lamp |
| CN100471609C (en) * | 2000-09-13 | 2009-03-25 | 浜松光子学株式会社 | Laser processing method and laser processing apparatus |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109940294A (en) * | 2012-11-29 | 2019-06-28 | 三星钻石工业股份有限公司 | Has the dividing method of figuratum substrate |
| CN103934567A (en) * | 2013-01-21 | 2014-07-23 | 均豪精密工业股份有限公司 | Laser machining system and method thereof |
| CN105408988A (en) * | 2013-07-31 | 2016-03-16 | 琳得科株式会社 | Protective film-forming film, sheet for protective film formation, and inspection method |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20120086241A (en) | 2012-08-02 |
| TW201232836A (en) | 2012-08-01 |
| JP2012156217A (en) | 2012-08-16 |
| KR101390115B1 (en) | 2014-04-28 |
| TWI447964B (en) | 2014-08-01 |
| JP5548143B2 (en) | 2014-07-16 |
| CN102610711B (en) | 2015-04-08 |
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