TWI483802B - Laser machining apparatus and method thereof - Google Patents

Description

Laser processing device and method thereof

A laser processing apparatus and method therefor, and more particularly to a method and apparatus for cutting.

In recent years, people's attention to environmental protection has led to the development trend of many consumable electronic products, which is also toward the trend of environmental protection, energy conservation and carbon reduction. Especially for illuminating devices, most of the illuminating devices that can meet environmental protection requirements today use illuminating diodes. Light Emitting Diode (LED).

At present, the light-emitting diode system is made of a crystal grain, and the crystal grain is obtained by cutting a wafer. Currently, an infrared light ultra-short pulse laser is used to focus on the inside of the substrate without damaging the surface. Internal processing to achieve the purpose of cutting the split.

However, in order to improve the luminous efficiency, the current light-emitting diodes are plated with gold on one side of the light-emitting diode. Since the gold has a high reflectance, the above-mentioned cutting method cannot be applied to the gold-plated light-emitting diode. Body, so in order to achieve the purpose of cutting, the industry will first remove the gold plating, and then cut, so invisibly increase the complexity, cost and time of the cutting process, and even worse, the yield is also reduced, so how to improve the cutting process There is still room for discussion.

In one embodiment, the technical means of the present disclosure is to provide a laser processing apparatus having: a laser source that generates a cutting beam; An optical unit is disposed on the path of the cutting beam.

In another embodiment, the present disclosure provides a laser processing method including: a cutting beam is used to remove a reflective layer of a multilayer material, and the cutting beam is such that a focus is formed in the transparent layer of the multilayer material. The focus is a plurality of; and the focus is formed in the transparent layer to form a processing region.

The embodiments of the present disclosure are described below by way of specific embodiments, and those skilled in the art can easily understand the disclosure by the contents disclosed in the specification.

Referring to FIG. 1 , the present disclosure is a laser processing apparatus for a multi-layer material 1 having a reflective layer 10 and a transparent layer 11 , and the reflective layer 10 is stacked on the transparent layer. The material of the transparent layer 11 is sapphire, glass, germanium or high molecular polymer, and the reflective layer 10 is an opaque layer. The material of the opaque layer is an absorbing material or a reflective material, and the absorbing material or The reflector is a metal or dielectric substance such as gold.

The laser processing apparatus has a laser source 20, a control unit 21 and an optical unit 22.

The laser source 20 can be a pulsed laser, and the laser source 20 generates a cutting beam 200. The wavelength of the pulsed laser can have an absorption rate for the reflective layer 10, and the absorption rate is 20%. The transparent layer may have an absorption rate for the wavelength of the pulsed laser, which is <20%.

The control unit 21 is electrically connected to the laser source 20, and the control unit 21 is capable of The burst mode of the laser source 20 is controlled, and the burst mode is the number of bursts, the number of pulses, the pulse pitch, the pulse intensity or the projection frequency. For example, the number of pulses is at least one to tens of thousands of pulses, and the pulse spacing is small. In 1 nanosecond (ns), the Irradiating Frequency is less than 1 GHz, and the burst number of the burst mode is at least one to tens of thousands of bursts. The burst number can be at least one to tens of thousands at different time points. It depends on the actual state or the material of the multilayer material, and the laser wavelength is from 250 nm to 3000 nm.

Please refer to FIG. 3, FIG. 4 and FIG. 5, as shown in FIG. 4, if the number of pulses in the burst mode of the laser source 20 is one shot each time, as shown in FIG. 5, the number of bursts is single. For consecutive numbers, there is a time interval between the hairs.

As shown in FIG. 3, the cutting beam 200 is capable of removing the reflective layer 10 and forming a focus 201 on the transparent layer 11, and only a removal trace can be seen in the removed region of the reflective layer 10, the single pulse number It is applied when the reflective layer 10 is thick or the energy of the laser source 20 is low.

Referring to FIG. 8 , FIG. 9 and FIG. 10 , as shown in FIG. 8 , if the number of pulses in the burst mode of the laser source 20 is a continuous number, as shown in FIG. 9 , the continuous number is Multiple consecutive numbers, and there is a time interval between each consecutive number.

The cutting beam 200 is capable of removing the reflective layer 10 and forming a focus 201 on the transparent layer 11. As shown in FIG. 10, several removal marks can be seen in the area where the reflective layer 10 is removed.

The optical unit 22 is disposed on the path of the cutting beam 200 to enable the cutting beam 200 to remove the reflective layer 10, and a focus 201 is generated in the transparent layer 11, and the optical unit 22 can be a focusing mirror, or at least one focusing mirror and At least one combination of polarizers.

Referring to FIG. 2 and FIG. 1 , the disclosure is a laser processing method for a multi-layer material 1 having a reflective layer 10 and a transparent layer 11 and a reflective layer 10 It is provided on the transparent layer 11.

The laser processing method includes:

S1: A cutting beam 200 is provided, which is produced by a laser source 20.

S2: the cutting beam 200 passes through the optical unit 22, and the reflective layer 10 is removed, and a focus 201 is generated in the transparent layer 11, and a control unit 21 is capable of controlling the number of bursts and the number of bursts of the burst mode of the laser source 20. The pulse interval, the pulse intensity or the projection frequency, and the burst number of the burst mode, the pulse number, the pulse pitch, the pulse intensity or the projection frequency is a processing parameter, and the processing parameter is adjusted by the control unit 21 to control the lightning Source 20.

S3: The cutting beam 200 removes the reflective layer 10, and then a processing region is formed in the transparent layer 11. Further, as shown in FIG. 4, the burst number in the burst mode is one shot.

As shown in Figure 5, the single burst number can be continuous with a time interval between each shot.

When the reflective layer 10 is thinner or the energy of the laser source 20 is higher, the cutting beam 200 has a higher energy in the burst mode, the reflective layer 10 can be removed, and the cutting beam 200 produces a focus 201 in the transparent layer 11. .

When the reflective layer 10 is thicker or the energy of the laser source 20 is lower, the number of pulses in the burst mode is at least one to tens of thousands of hairs, the reflective layer 10 can be removed, and the cut beam 200 is generated in the transparent layer 11 A focus 201.

As shown in FIG. 3, if the number of pulses in the burst mode of the laser source 20 is one, the cutting beam 200 can remove the reflective layer 10 and form a focus 201 on the transparent layer 11.

As shown in FIG. 6, the bursting mode beam 200 is a continuous single burst, as shown in FIG. 9, and each of the bursting cut beams 200 removes a plurality of regions of the reflective layer 10. Similarly, the transparent layer 11 also has a plurality of Focus 201.

As shown in FIG. 7, if the cutting beam 200 or the multi-layer material 1 moves faster, then the above-mentioned several regions are in communication to form all the grooves, and the plurality of focal points 201 become the above-mentioned processing region 110, so that the multi-layer material 1 is easy to cut.

Referring to FIG. 10 again, if the number of pulses in one burst mode of the laser source 20 is a plurality of consecutive numbers, as shown in FIG. 8, the cut beam 200 of the one burst mode can remove the reflective layer. 10, and a focus 201 is formed on the transparent layer 11.

As shown in FIG. 8, there is one burst number and FIG. 9 has three burst numbers, each burst number is a continuous burst number, and each burst has multiple bursts, and successive bursts are generated in each burst mode of FIG. There is a time interval between the numbers.

As shown in FIG. 6 and FIG. 7, each of the continuous burst mode cutting beams 200 removes a plurality of regions of the reflective layer 10. Similarly, the transparent layer 11 also has a plurality of focal points 201, which form all the grooves. A plurality of focus points 201 are the processing areas 110 described above.

In summary, the disclosure uses a laser source capable of being a pulsed laser by controlling the burst mode of the pulsed laser. The equation is the number of bursts, the number of pulses, the pulse pitch, the pulse intensity or the projection frequency, and the number of cut beams is set to remove the reflective layer and form a processing region in the transparent layer.

If the burst mode is a single burst, the energy of a cut beam can simultaneously remove the reflective layer and form a focus in the transparent layer.

If the burst mode is a continuous burst, which is applied to a thick reflective layer or a low energy of the laser source, part of the cut beam can remove the reflective layer, and part of the cut beam can form a focus in the transparent layer.

Assuming that the multilayer material is a gold-plated substrate, the substrate is transparent, and the present disclosure can cut the light beam, simultaneously strip the gold plating, and cut the substrate, thereby simplifying the versatility, cost and time of the cutting process, and capable of Improve the yield of cutting.

However, the specific embodiments described above are only used to illustrate the disclosure, and are not intended to limit the scope of the disclosure, and may be disclosed without departing from the spirit and scope of the disclosure. Equivalent changes and modifications to the content are still covered by the scope of the patent application below.

1‧‧‧Multilayer materials

10‧‧‧reflective layer

11‧‧‧ transparent layer

110‧‧‧Processing area

20‧‧‧Laser source

200‧‧‧cut beam

201‧‧‧ Focus

21‧‧‧Control unit

22‧‧‧ Optical unit

FIG. 1 is a schematic view of a laser processing apparatus according to the present disclosure.

2 is a flow chart of a laser processing method according to the present disclosure.

Figure 3 is a schematic illustration of a multilayer material with a single erupted cutting beam to remove a reflective layer.

Figure 4 is a schematic diagram of a single pulse number.

Figure 5 is a schematic diagram of a plurality of single pulse numbers.

Figure 6 is a schematic illustration of the multilayer material of the reflective layer.

Figure 7 is a schematic illustration of a multilayer material having a processing region.

Figure 8 is a schematic diagram of a plurality of consecutive pulses.

FIG. 9 is a schematic diagram of a plurality of consecutive pulse numbers.

Figure 10 is a schematic illustration of a multilayer material undergoing a continuous burst of cutting beam to remove a reflective layer.

1‧‧‧Multilayer materials

10‧‧‧reflective layer

11‧‧‧ transparent layer

20‧‧‧Laser source

200‧‧‧cut beam

201‧‧‧ Focus

21‧‧‧Control unit

22‧‧‧ Optical unit

Claims (20)

A laser processing apparatus for removing a reflective layer of a multilayer material having a transparent layer, the laser processing apparatus having: a laser source that generates a cutting beam; and a The optical unit is disposed in the path of the cutting beam; wherein the laser source is a pulsed laser, and the wavelength of the pulsed laser has an absorption rate for the reflective layer, and the absorption rate is 20%, the transparency The layer has an absorption rate for the wavelength of the pulsed laser, which is <20%. The laser processing apparatus of claim 1, further comprising a control unit electrically connected to the laser source. The laser processing apparatus of claim 2, wherein the laser source is a pulsed laser, and the control unit controls the burst number, pulse number, pulse spacing, and pulse of the burst mode of the laser source. Intensity, laser wavelength or projection frequency. The laser processing apparatus of claim 3, wherein the laser has a wavelength of from 250 nanometers (nm) to 3,000 nanometers (nm). The laser processing apparatus of claim 3, wherein the pulse pitch is less than 1 nanosecond (ns). The laser processing apparatus of claim 3, wherein the number of bursts is at least one burst, and the number of bursts is at least one to tens of thousands of bursts. The laser processing apparatus of claim 1, wherein the optical unit is a focusing mirror or a combination of at least one focusing mirror and at least one polarizing mirror. A laser processing method comprising: a cutting beam is used to remove a reflective layer of a plurality of layers of material, and the cutting beam is formed such that a focus is formed in the transparent layer of the multilayer material, the focal point is plural; and the focus is formed in the transparent layer to form a process a region; wherein the cutting beam is generated by a laser source, the laser source is a pulsed laser, and the wavelength of the pulsed laser has an absorption rate for the reflective layer, and the absorption rate is 20%, The transparent layer has an absorbance for the wavelength of the pulsed laser, which is <20%. The laser processing method of claim 8, wherein the processing parameter is further adjusted to control the cutting beam. The laser processing method according to claim 9, wherein the processing parameter is an burst number, a pulse number, a pulse interval, a pulse intensity or a projection frequency. The laser processing method of claim 10, wherein the laser has a wavelength of from 250 nanometers (nm) to 3,000 nanometers (nm). The laser processing method of claim 10, wherein the pulse pitch is less than 1 nanosecond (ns). The laser processing method of claim 10, wherein the number of bursts is at least one burst, and the number of bursts is at least one to tens of thousands of bursts. The laser processing method of claim 10, wherein the number of pulses is one shot, the single burst number can be continuous, and there is a time interval between each shot. The laser processing method according to claim 10, wherein the pulse number is a plurality of consecutive hair numbers, and each of the consecutive hair numbers has a time interval. The laser processing method of claim 9, wherein the cutting beam passes through an optical unit to remove the reflective layer, and the focus is formed in the transparent layer. The laser processing method of claim 8, wherein the transparent layer is made of sapphire, glass, germanium or a high molecular polymer. The laser processing method of claim 8, wherein the reflective layer is an opaque layer. The laser processing method of claim 18, wherein the material of the opaque layer is an absorber or a reflector. The laser processing method of claim 19, wherein the absorber or the reflector is a metal dielectric material.