TW201422353A - Laser machining apparatus and method thereof - Google Patents
Laser machining apparatus and method thereof Download PDFInfo
- Publication number
- TW201422353A TW201422353A TW101147470A TW101147470A TW201422353A TW 201422353 A TW201422353 A TW 201422353A TW 101147470 A TW101147470 A TW 101147470A TW 101147470 A TW101147470 A TW 101147470A TW 201422353 A TW201422353 A TW 201422353A
- Authority
- TW
- Taiwan
- Prior art keywords
- laser processing
- laser
- processing method
- pulse
- cutting beam
- Prior art date
Links
Landscapes
- Laser Beam Processing (AREA)
Abstract
Description
一種雷射加工裝置及其方法,尤指一種用於切割之方法與其裝置。 A laser processing apparatus and method therefor, and more particularly to a method and apparatus for cutting.
近年人們的對於環保意識的重視,其係造成許多消耗性電子產品的發展趨勢亦朝向環保與節能減碳的趨勢發展,特別是發光裝置,現今能夠符合環保訴求的發光裝置係大都使用發光二極體(Light Emitting Diode,LED)。 In recent years, people's attention to environmental protection has led to the development trend of many consumable electronic products, which is also toward the trend of environmental protection, energy conservation and carbon reduction. Especially for illuminating devices, most of the illuminating devices that can meet environmental protection requirements today use illuminating diodes. Light Emitting Diode (LED).
目前發光二極體係使用晶粒所製成,而晶粒係切割一晶圓而得,目前係以紅外光超短脈衝雷射,以聚焦於基板內部,於不破壞表面的情況下,對基板內部加工,而達到切割裂片的目的。 At present, the light-emitting diode system is made of a crystal grain, and the crystal grain is obtained by cutting a wafer. Currently, an infrared light ultra-short pulse laser is used to focus on the inside of the substrate without damaging the surface. Internal processing to achieve the purpose of cutting the split.
但現今的發光二極體為了增進發光效率,故會於發光二極體的一面鍍有金,因金具有較高的反射率,故上述之切割方式係無法應用於鍍有金的發光二極體,所以為了達到切割之目的,目前業界會先剝除鍍金,再進行切割,如此無形中增加切割製程的繁複性、成本與時間,更有甚者,良率亦降低,所以如何改善切割製程仍有可討論的空間。 However, in order to improve the luminous efficiency, the current light-emitting diodes are plated with gold on one side of the light-emitting diode. Since the gold has a high reflectance, the above-mentioned cutting method cannot be applied to the gold-plated light-emitting diode. Body, so in order to achieve the purpose of cutting, the industry will first remove the gold plating, and then cut, so invisibly increase the complexity, cost and time of the cutting process, and even worse, the yield is also reduced, so how to improve the cutting process There is still room for discussion.
於一實施例,本揭露之技術手段在於提供一種雷射加工裝置,其具有:一雷射源,其係產生一切割光束;以及 一光學單元,其係設於該切割光束之路徑。 In one embodiment, the technical means of the present disclosure is to provide a laser processing apparatus having: a laser source that generates a cutting beam; An optical unit is disposed on the path of the cutting beam.
於另一實施例,本揭露復提供一種雷射加工方法,其包含有:一切割光束係移除一多層材料之反射層,而該切割光束係使該多層材料之透明層中形成有一焦點,該焦點為複數個;以及該些焦點係於該透明層中形成有一加工區域。 In another embodiment, the present disclosure provides a laser processing method including: a cutting beam is used to remove a reflective layer of a multilayer material, and the cutting beam is such that a focus is formed in the transparent layer of the multilayer material. The focus is a plurality of; and the focus is formed in the transparent layer to form a processing region.
以下係藉由特定的具體實施例說明本揭露之實施方式,所屬技術領域中具有通常知識者可由本說明書所揭示之內容,輕易地瞭解本揭露。 The embodiments of the present disclosure are described below by way of specific embodiments, and those skilled in the art can easily understand the disclosure by the contents disclosed in the specification.
請配合參考圖1所示,本揭露係一種雷射加工裝置,其係用於一多層材料1,該多層材料1具有一反射層10與一透明層11,反射層10係疊設於透明層11,透明層11之材料為藍寶石、玻璃、矽或高分子聚合物,反射層10為一不透光層,該不透光層之材料為一吸收物或一反射物,該吸收物或該反射物為一金屬或介電物質,如金。 Referring to FIG. 1 , the present disclosure is a laser processing apparatus for a multi-layer material 1 having a reflective layer 10 and a transparent layer 11 , and the reflective layer 10 is stacked on the transparent layer. The material of the transparent layer 11 is sapphire, glass, germanium or high molecular polymer, and the reflective layer 10 is an opaque layer. The material of the opaque layer is an absorbing material or a reflective material, and the absorbing material or The reflector is a metal or dielectric substance such as gold.
該雷射加工裝置具有一雷射源20、一控制單元21與一光學單元22。 The laser processing apparatus has a laser source 20, a control unit 21 and an optical unit 22.
雷射源20係能夠為一脈衝雷射,該雷射源20係產生一切割光束200,該脈衝雷射之波長可選擇對反射層10具有一吸收率,該吸收率係≧20%,該脈衝雷射之波長可選擇對透明層具有一吸收率,該吸收率係<20%。 The laser source 20 can be a pulsed laser, and the laser source 20 generates a cutting beam 200. The wavelength of the pulsed laser can have an absorption rate for the reflective layer 10, and the absorption rate is 20%. The wavelength of the pulsed laser can optionally have an absorption rate for the transparent layer, which is <20%.
控制單元21係電性連接雷射源20,控制單元21係能 夠控制雷射源20之爆發模式,該爆發模式為爆發數、脈衝發數、脈衝間距、脈衝強度或投射頻率,舉例而言,脈衝發數為至少一發至數萬發,脈衝間距為少於1奈秒(ns),投射頻率係小於1 GHz,爆發模式之脈衝發數至少一發至數萬發,於不同的時間點該脈衝發數能夠為至少一發至數萬發,其係依實際狀態或多層材料之材質而定,該雷射波長為250 nm至3000 nm。 The control unit 21 is electrically connected to the laser source 20, and the control unit 21 is capable of The burst mode of the laser source 20 is controlled, and the burst mode is the number of bursts, the number of pulses, the pulse pitch, the pulse intensity or the projection frequency. For example, the number of pulses is at least one to tens of thousands of pulses, and the pulse spacing is small. In 1 nanosecond (ns), the projection frequency is less than 1 GHz, and the number of pulses in the burst mode is at least one to tens of thousands of bursts. At different time points, the number of pulses can be at least one to tens of thousands of bursts. Depending on the actual state or the material of the multilayer material, the laser wavelength is from 250 nm to 3000 nm.
請配合參考圖3、圖4與圖5所示,如圖4所示,若每次雷射源20之爆發模式中脈衝發數為一發時,如圖5所示,單發脈衝發數為連續的數發,並且各發之間係有一時間間隔。 Please refer to FIG. 3, FIG. 4 and FIG. 5, as shown in FIG. 4, if the number of pulses in the burst mode of the laser source 20 is one shot each time, as shown in FIG. 5, the number of bursts is single. For consecutive numbers, there is a time interval between the hairs.
如圖3所示,切割光束200係能夠移除反射層10,並於透明層11形成一焦點201,於該反射層10所移除的區域僅能見到一道移除痕跡,該單一脈衝發數係應用於若反射層10較厚或雷射源20之能量較低時。 As shown in FIG. 3, the cutting beam 200 is capable of removing the reflective layer 10 and forming a focus 201 on the transparent layer 11, and only a removal trace can be seen in the removed region of the reflective layer 10, the single pulse number It is applied when the reflective layer 10 is thick or the energy of the laser source 20 is low.
請配合參考圖8、圖9及圖10所示,如圖8所示,若雷射源20之爆發模式中脈衝發數為連續發數時,如圖9所示,該連續發數係為多個連續發數,並且各連續發數之間係有一時間間隔。 Referring to FIG. 8 , FIG. 9 and FIG. 10 , as shown in FIG. 8 , if the number of pulses in the burst mode of the laser source 20 is a continuous number, as shown in FIG. 9 , the continuous number is Multiple consecutive numbers, and there is a time interval between each consecutive number.
切割光束200係能夠移除反射層10,並於透明層11形成一焦點201,如圖10所示,於該反射層10所移除的區域能見到數道移除痕跡。 The cutting beam 200 is capable of removing the reflective layer 10 and forming a focus 201 on the transparent layer 11. As shown in FIG. 10, several removal marks can be seen in the area where the reflective layer 10 is removed.
光學單元22係設於切割光束200的路徑,以使切割光束200能夠移除反射層10,而於透明層11中產生一焦點201,光學單元22能夠為一聚焦鏡,或者至少一聚焦鏡與 至少一偏光鏡之組合。 The optical unit 22 is disposed on the path of the cutting beam 200 to enable the cutting beam 200 to remove the reflective layer 10, and a focus 201 is generated in the transparent layer 11, and the optical unit 22 can be a focusing mirror, or at least one focusing mirror and At least one combination of polarizers.
請配合參考圖2與圖1所示,本揭露係一種雷射加工方法,其係用於一多層材料1,該多層材料1具有一反射層10與一透明層11,反射層10係疊設於透明層11。 Referring to FIG. 2 and FIG. 1 , the disclosure is a laser processing method for a multi-layer material 1 having a reflective layer 10 and a transparent layer 11 and a reflective layer 10 It is provided on the transparent layer 11.
該雷射加工方法包含有: The laser processing method includes:
S1:提供一切割光束200,該切割光束200係由一雷射源20所產生。 S1: A cutting beam 200 is provided, which is produced by a laser source 20.
S2:切割光束200係通過光學單元22,並且移除反射層10,而於透明層11中產生一焦點201,一控制單元21係能夠控制雷射源20之爆發模式之爆發數、脈衝發數、脈衝間距、脈衝強度或投射頻率,而爆發模式之爆發數、該脈衝發數、脈衝間距、脈衝強度或投射頻率係為一加工參數,該加工參數係透過控制單元21所調整,以控制雷射源20。 S2: the cutting beam 200 passes through the optical unit 22, and the reflective layer 10 is removed, and a focus 201 is generated in the transparent layer 11, and a control unit 21 is capable of controlling the number of bursts and the number of bursts of the burst mode of the laser source 20. The pulse interval, the pulse intensity or the projection frequency, and the burst number of the burst mode, the pulse number, the pulse pitch, the pulse intensity or the projection frequency is a processing parameter, and the processing parameter is adjusted by the control unit 21 to control the lightning Source 20.
S3:該切割光束200係移除該反射層10,而後使透明層11中形成有一加工區域;更進一步說明,如圖4所示,該爆發模式中脈衝發數為一發。 S3: The cutting beam 200 removes the reflective layer 10, and then a processing region is formed in the transparent layer 11. Further, as shown in FIG. 4, the burst number in the burst mode is one shot.
如圖5所示,該單一脈衝發數係能夠為連續,並且各單發之間係有一時間間隔。 As shown in Figure 5, the single burst number can be continuous with a time interval between each shot.
當反射層10較薄或雷射源20之能量較高時,切割光束200於爆發模式中具有較高的能量,可移除反射層10,並且切割光束200於透明層11中產生一焦點201。 When the reflective layer 10 is thinner or the energy of the laser source 20 is higher, the cutting beam 200 has a higher energy in the burst mode, the reflective layer 10 can be removed, and the cutting beam 200 produces a focus 201 in the transparent layer 11. .
當反射層10較厚或雷射源20之能量較低時,該爆發模式中脈衝發數為至少一發至數萬發,可移除反射層10,而後切割光束200於透明層11中產生一焦點201。 When the reflective layer 10 is thicker or the energy of the laser source 20 is lower, the number of pulses in the burst mode is at least one to tens of thousands of hairs, the reflective layer 10 can be removed, and the cut beam 200 is generated in the transparent layer 11 A focus 201.
請配合圖3所示,若雷射源20之爆發模式中脈衝發數為一發時,切割光束200係能夠移除反射層10,並於透明層11形成一焦點201。 As shown in FIG. 3, if the number of pulses in the burst mode of the laser source 20 is one, the cutting beam 200 can remove the reflective layer 10 and form a focus 201 on the transparent layer 11.
如圖6所示,爆發模式之切割光束200為連續單一爆發,如圖9所示,並且各爆發之切割光束200係移除反射層10之數個區域,同樣地,透明層11亦具有複數個焦點201。 As shown in FIG. 6, the bursting mode beam 200 is a continuous single burst, as shown in FIG. 9, and each of the bursting cut beams 200 removes a plurality of regions of the reflective layer 10. Similarly, the transparent layer 11 also has a plurality of Focus 201.
如圖7所示,若切割光束200或多層材料1移動速度較快時,則上述之數個區域係相通,而形成一切溝,則複數個焦點201係成為上述之加工區域110,使得多層材料1容易被切割。 As shown in FIG. 7, if the cutting beam 200 or the multi-layer material 1 moves faster, then the above-mentioned several regions are in communication to form all the grooves, and the plurality of focal points 201 become the above-mentioned processing region 110, so that the multi-layer material 1 is easy to cut.
請再配合參考圖10所示,若雷射源20之一個爆發模式中脈衝發數為多個連續發數時,如圖8所示,該一個爆發模式之切割光束200係能夠移除反射層10,並於透明層11形成一焦點201。 Referring to FIG. 10 again, if the number of pulses in one burst mode of the laser source 20 is a plurality of consecutive numbers, as shown in FIG. 8, the cut beam 200 of the one burst mode can remove the reflective layer. 10, and a focus 201 is formed on the transparent layer 11.
如圖8所示具有一個爆發數及圖9具有三個爆發數,該每個爆發數為連續脈衝發數,係每個爆發數具有多個脈衝發數,並且圖9各爆發模式中連續發數之間具有一時間間隔。 As shown in FIG. 8, there is one burst number and FIG. 9 has three burst numbers, each burst number is a continuous burst number, and each burst has multiple bursts, and successive bursts are generated in each burst mode of FIG. There is a time interval between the numbers.
如圖6與圖7所示,各發之連續爆發模式之切割光束200係移除反射層10之數個區域,同樣地,透明層11亦具有複數個焦點201,該些區域係形成一切溝,複數個焦點201係成為上述之加工區域110。 As shown in FIG. 6 and FIG. 7, each of the continuous burst mode cutting beams 200 removes a plurality of regions of the reflective layer 10. Similarly, the transparent layer 11 also has a plurality of focal points 201, which form all the grooves. A plurality of focus points 201 are the processing areas 110 described above.
綜合上述,本揭露係使用一雷射源,該雷射源能夠為一脈衝雷射,藉由控制該脈衝雷射的爆發模式,該爆發模 式為爆發數、脈衝發數、脈衝間距、脈衝強度或投射頻率,而設定切割光束之發數,以移除反射層,並於透明層中形成一加工區域。 In summary, the disclosure uses a laser source capable of being a pulsed laser by controlling the burst mode of the pulsed laser. The equation is the number of bursts, the number of pulses, the pulse pitch, the pulse intensity or the projection frequency, and the number of cut beams is set to remove the reflective layer and form a processing region in the transparent layer.
若爆發模式為單一爆發,一切割光束的能量係能夠同時移除反射層,並於透明層中形成一焦點。 If the burst mode is a single burst, the energy of a cut beam can simultaneously remove the reflective layer and form a focus in the transparent layer.
若爆發模式為連續爆發,其係應用於反射層較厚或雷射源之能量較低時,部分的切割光束係能夠移除反射層,部分的切割光束係能夠使透明層中形成一焦點。 If the burst mode is a continuous burst, which is applied to a thick reflective layer or a low energy of the laser source, part of the cut beam can remove the reflective layer, and part of the cut beam can form a focus in the transparent layer.
假設多層材料為一鍍金之基材時,該基材為透明,本揭露即可以一切割光束,同時剝除鍍金,並切割基材,如此可簡化切割製程的繁複性、成本與時間,並能夠提升切割的良率。 Assuming that the multilayer material is a gold-plated substrate, the substrate is transparent, and the present disclosure can cut the light beam, simultaneously strip the gold plating, and cut the substrate, thereby simplifying the versatility, cost and time of the cutting process, and capable of Improve the yield of cutting.
惟以上所述之具體實施例,僅係用於例釋本揭露,而非用於限定本揭露之可實施範疇,於未脫離本揭露上揭之精神與技術範疇下,任何運用本揭露所揭示內容而完成之等效改變及修飾,均仍應為下述之申請專利範圍所涵蓋。 However, the specific embodiments described above are only used to illustrate the disclosure, and are not intended to limit the scope of the disclosure, and may be disclosed without departing from the spirit and scope of the disclosure. Equivalent changes and modifications to the content are still covered by the scope of the patent application below.
1‧‧‧多層材料 1‧‧‧Multilayer materials
10‧‧‧反射層 10‧‧‧reflective layer
11‧‧‧透明層 11‧‧‧ transparent layer
110‧‧‧加工區域 110‧‧‧Processing area
20‧‧‧雷射源 20‧‧‧Laser source
200‧‧‧切割光束 200‧‧‧cut beam
201‧‧‧焦點 201‧‧‧ Focus
21‧‧‧控制單元 21‧‧‧Control unit
22‧‧‧光學單元 22‧‧‧ Optical unit
圖1為本揭露之一種雷射加工裝置之示意圖。 FIG. 1 is a schematic view of a laser processing apparatus according to the present disclosure.
圖2為本揭露之一種雷射加工方法之流程圖。 2 is a flow chart of a laser processing method according to the present disclosure.
圖3為一多層材料經單一爆發之切割光束去除一反射層之示意圖。 Figure 3 is a schematic illustration of a multilayer material with a single erupted cutting beam to remove a reflective layer.
圖4為一單一脈衝發數之示意圖。 Figure 4 is a schematic diagram of a single pulse number.
圖5為多個單一脈衝發數之示意圖。 Figure 5 is a schematic diagram of a plurality of single pulse numbers.
圖6為該去除反射層之多層材料之示意圖。 Figure 6 is a schematic illustration of the multilayer material of the reflective layer.
圖7為一具有加工區域之多層材料之示意圖。 Figure 7 is a schematic illustration of a multilayer material having a processing region.
圖8為一多個連續脈衝發數之示意圖。 Figure 8 is a schematic diagram of a plurality of consecutive pulses.
圖9為多個接續之多個脈衝發數之示意圖。 FIG. 9 is a schematic diagram of a plurality of consecutive pulse numbers.
圖10為一多層材料經連續爆發之切割光束去除一反射層之示意圖。 Figure 10 is a schematic illustration of a multilayer material undergoing a continuous burst of cutting beam to remove a reflective layer.
1‧‧‧多層材料 1‧‧‧Multilayer materials
10‧‧‧反射層 10‧‧‧reflective layer
11‧‧‧透明層 11‧‧‧ transparent layer
20‧‧‧雷射源 20‧‧‧Laser source
200‧‧‧切割光束 200‧‧‧cut beam
201‧‧‧焦點 201‧‧‧ Focus
21‧‧‧控制單元 21‧‧‧Control unit
22‧‧‧光學單元 22‧‧‧ Optical unit
Claims (25)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW101147470A TWI483802B (en) | 2012-12-14 | 2012-12-14 | Laser machining apparatus and method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW101147470A TWI483802B (en) | 2012-12-14 | 2012-12-14 | Laser machining apparatus and method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201422353A true TW201422353A (en) | 2014-06-16 |
TWI483802B TWI483802B (en) | 2015-05-11 |
Family
ID=51393748
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW101147470A TWI483802B (en) | 2012-12-14 | 2012-12-14 | Laser machining apparatus and method thereof |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI483802B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201946882A (en) | 2018-05-07 | 2019-12-16 | 美商康寧公司 | Laser-induced separation of transparent oxide glass |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8598490B2 (en) * | 2008-03-31 | 2013-12-03 | Electro Scientific Industries, Inc. | Methods and systems for laser processing a workpiece using a plurality of tailored laser pulse shapes |
JP5620669B2 (en) * | 2009-10-26 | 2014-11-05 | 東芝機械株式会社 | Laser dicing method and laser dicing apparatus |
US8383984B2 (en) * | 2010-04-02 | 2013-02-26 | Electro Scientific Industries, Inc. | Method and apparatus for laser singulation of brittle materials |
US20120175652A1 (en) * | 2011-01-06 | 2012-07-12 | Electro Scientific Industries, Inc. | Method and apparatus for improved singulation of light emitting devices |
JP5548143B2 (en) * | 2011-01-25 | 2014-07-16 | 三星ダイヤモンド工業株式会社 | LED chip manufacturing method |
TWI457191B (en) * | 2011-02-04 | 2014-10-21 | Mitsuboshi Diamond Ind Co Ltd | Laser scribing method and laser processing apparatus |
-
2012
- 2012-12-14 TW TW101147470A patent/TWI483802B/en active
Also Published As
Publication number | Publication date |
---|---|
TWI483802B (en) | 2015-05-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI819817B (en) | Laser processing apparatus, methods of laser-processing workpieces and related arrangements | |
TWI659793B (en) | Systems and methods for processing transparent materials using adjustable laser beam focal lines | |
JP6585050B2 (en) | Cutting stack transparent materials using ultrafast laser beam optics, destructive layers and other layers | |
CN102725096B (en) | Laser processing method | |
CN110640338B (en) | Composite pulse laser deep hole processing device based on Bessel light beam | |
US20150136744A1 (en) | Methods and systems for laser processing of coated substrates | |
JP2017502901A5 (en) | ||
TWI774721B (en) | Method and system for extending optics lifetime in laser processing apparatus | |
JP2022518898A (en) | Laser machining equipment, how to operate it, and how to machine workpieces with it | |
TW201350246A (en) | Method for cutting workpiece by layer and apparatus by same | |
JP2014510398A (en) | Method and apparatus for improved laser scribing of photoelectric elements | |
CN102918642A (en) | Method and apparatus for improved wafer singulation | |
EP2961559A1 (en) | Laser system and method for processing sapphire | |
CN102500933A (en) | Laser machining method for matching with light-emitting diode (LED) inner cutting process | |
CN106794553A (en) | Second surface laser ablation | |
JP2019532815A (en) | Laser processing apparatus and method of laser processing workpiece | |
CN203426595U (en) | Wafer laser cutting device | |
US7879712B2 (en) | Method for patterning polycrystalline indium tin oxide | |
EP2437317A3 (en) | Method and system for scribing a multilayer panel | |
TWI483802B (en) | Laser machining apparatus and method thereof | |
CN110605483A (en) | Laser cutting device of LED wafer | |
KR20130076440A (en) | Laser cutting apparatus and laser cutting method | |
CN112427814A (en) | Laser pre-segmentation device and laser pre-segmentation method | |
TW201539057A (en) | Polarizer and image display device | |
JP2004202498A (en) | Laser beam machining method, encoder slit formed thereby and image display body |