CN115647610A - Wafer cutting method - Google Patents
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- CN115647610A CN115647610A CN202211587489.8A CN202211587489A CN115647610A CN 115647610 A CN115647610 A CN 115647610A CN 202211587489 A CN202211587489 A CN 202211587489A CN 115647610 A CN115647610 A CN 115647610A
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- 238000005520 cutting process Methods 0.000 title claims abstract description 142
- 238000000034 method Methods 0.000 title claims abstract description 58
- 230000001681 protective effect Effects 0.000 claims description 35
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 33
- 229910052710 silicon Inorganic materials 0.000 claims description 33
- 239000010703 silicon Substances 0.000 claims description 33
- 239000003292 glue Substances 0.000 claims description 25
- 238000003698 laser cutting Methods 0.000 claims description 17
- 239000002893 slag Substances 0.000 claims description 10
- 239000000853 adhesive Substances 0.000 claims description 8
- 230000001070 adhesive effect Effects 0.000 claims description 8
- 229910002601 GaN Inorganic materials 0.000 description 19
- 238000010586 diagram Methods 0.000 description 8
- 238000002161 passivation Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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Abstract
The invention discloses a wafer cutting method, wherein a wafer comprises a plurality of chip units, a plurality of scribing lines are arranged on the front surface of the wafer, and the scribing lines are arranged between any two adjacent chip units; the wafer cutting method comprises the following steps: cutting the back surface of the wafer by a first set depth according to the scribing line on the front surface of the wafer by adopting first laser; and cutting the front surface of the wafer by a second set depth along the scribing line of the front surface of the wafer by using a second laser to complete the cutting of the wafer, wherein the vertical projection of the cutting track of the back surface of the wafer on the front surface of the wafer is coincident with the cutting track of the front surface of the wafer. The invention provides a wafer cutting method, which can reduce or even eliminate damage and cracks caused to chip units in a wafer in the traditional cutter wheel cutting process, and solve the problem that the parameters and the reliability of the chip units in the wafer are degraded after the traditional cutter wheel is cut.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a wafer cutting method.
Background
The chips need to be separated in units after being processed on the wafer, and nowadays, the chips are mainly realized by a method of cutting with a cutter wheel, but the method has certain limitations, and certain influence is generated on the performance or yield of the product. For example, fig. 1 is a schematic structural diagram of a silicon-based gallium nitride wafer, and referring to fig. 1, a silicon-based gallium nitride wafer 100 includes a plurality of silicon-based gallium nitride chips 110 arranged in an array, scribe lanes 120 (an area between two adjacent silicon-based gallium nitride chips 110 is a scribe lane 120), and scribe lines 130 (the scribe lines 130 are located in the scribe lanes 120). Each silicon-based gan chip 110 is composed of an active region 111 and a terminal 112. Fig. 2 is a schematic cross-sectional structure diagram of a silicon-based gan chip formed after cutting by using a cutter wheel, and referring to fig. 2, the silicon-based gan chip is composed of an active region 111 and a terminal 112 surrounding the active region 111, and the terminal 112 extends outward to form a scribe line 120. In a conventional dicing method, a cutter wheel is used to cut along a dicing line 130 in a dicing street 120, so as to cut through a passivation layer 113, a gallium nitride epitaxial layer 114 and a silicon-based substrate 115 of a silicon-based gallium nitride chip, form a cutting line 116, and divide a silicon-based gallium nitride wafer into individual silicon-based gallium nitride chip units. During the cutting process of the silicon-based gallium nitride wafer, since the high-speed cutting of the cutter wheel can generate cracks 117 in the passivation layer 113 of the silicon-based gallium nitride chip and cracks 117 in the gallium nitride epitaxial layer 114, the cracks can extend to the active region 111 of the silicon-based gallium nitride chip along the passivation layer 113 and the gallium nitride epitaxial layer 114, and the parameters and reliability of the silicon-based gallium nitride chip are affected. Fig. 3 is a schematic diagram of resistance changes before and after the cutting of the silicon-based gallium nitride wafer by the cutter wheel cutting method, referring to fig. 3, an abscissa in fig. 3 represents a number of the silicon-based gallium nitride wafer, and an ordinate in fig. 3 represents a dynamic on-resistance of the silicon-based gallium nitride chip, and after the cutting by the conventional cutter wheel, the dynamic on-resistance of the silicon-based gallium nitride chip is significantly increased.
Disclosure of Invention
The invention provides a wafer cutting method, which can reduce or even eliminate damage and cracks to a chip unit in a wafer in the traditional cutter wheel cutting process and solve the problem that the parameter and the reliability of the chip unit in the wafer are degraded after the traditional cutter wheel is cut.
According to one aspect of the invention, a wafer cutting method is provided, wherein the wafer comprises a plurality of chip units, a plurality of scribing lines are arranged on the front surface of the wafer, and the scribing lines are arranged between any two adjacent chip units;
the wafer cutting method comprises the following steps:
cutting the back surface of the wafer by a first set depth according to the scribing line on the front surface of the wafer by adopting first laser;
and cutting the front surface of the wafer by a second set depth along the scribing line of the front surface of the wafer by using a second laser to complete the cutting of the wafer, wherein the vertical projection of the cutting track of the back surface of the wafer on the front surface of the wafer is coincident with the cutting track of the front surface of the wafer.
Optionally, the wafer includes a silicon-based gallium nitride wafer.
Optionally, the first set depth is 45% -50% of the thickness of the wafer before being cut;
the second set depth is 45% -50% of the thickness of the wafer before cutting.
Optionally, the cutting the front side of the wafer by a second set depth along the scribe line on the front side of the wafer with a second laser to complete the cutting of the wafer further includes:
and carrying out film expansion on the wafer to obtain a plurality of chip units.
Optionally, before the cutting the back surface of the wafer by the first set depth according to the scribe line on the front surface of the wafer with the first laser, the method includes:
forming a first UV film on the front surface of the wafer, and fixing the wafer on a wafer carrying table of a cutting machine through the first UV film;
and forming a first protective adhesive on the back surface of the wafer.
Optionally, the cutting the front surface of the wafer by a second set depth along the scribe line of the front surface of the wafer with a second laser to complete the cutting of the wafer includes:
forming a second UV film on the back of the wafer, and fixing the wafer on a wafer carrying table of a cutting machine through the second UV film;
and forming a second protective adhesive on the front surface of the wafer.
Optionally, after the cutting the back surface of the wafer by the first set depth according to the scribe line on the front surface of the wafer with the first laser, the method further includes:
and removing the first protective glue and the debris and slag generated in the first laser cutting process.
Optionally, the cutting the front surface of the wafer by a second set depth along the scribe line on the front surface of the wafer with a second laser to complete the cutting of the wafer includes:
and removing the second protective glue and the scraps and slag generated in the second laser cutting process.
Optionally, the energy of the first laser is not equal to the energy of the second laser.
Optionally, the first protective glue and the second protective glue both have light transmittance.
The embodiment provides a wafer cutting method, which comprises the following steps: and cutting the back surface of the wafer by a first set depth by adopting the first laser, and then cutting the front surface of the wafer by a second set depth by adopting the second laser, thereby completing the cutting of the wafer, wherein the cutting track of the back surface of the wafer is the same as the cutting track of the front surface of the wafer. Because the laser cutting wafer has small influence on the parameters of the chip units in the wafer, the back and the front of the wafer are both cut by the laser, so that the chip units in the cut wafer can be conveniently separated, the damage to the chip units can be reduced, and the influence on the parameters of the chip units is reduced. Therefore, the wafer cutting method provided by the embodiment can reduce or even eliminate damage and cracks to the chip unit in the wafer in the traditional cutter wheel cutting process, and solve the problem that the parameter and reliability of the chip unit in the wafer are degraded after the traditional cutter wheel cutting.
It should be understood that the statements in this section do not necessarily identify key or critical features of the embodiments of the present invention, nor do they necessarily limit the scope of the invention. Other features of the present invention will become apparent from the following description.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a schematic diagram of a structure of a GaN-based wafer;
FIG. 2 is a schematic cross-sectional view of a silicon-based GaN chip formed by cutting with a cutter wheel;
FIG. 3 is a schematic diagram of the resistance change before and after cutting a silicon-based GaN wafer according to the prior art;
fig. 4 is a schematic flow chart illustrating a wafer dicing method according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of a wafer dicing apparatus according to an embodiment of the present invention;
FIG. 6 is a schematic diagram illustrating the resistance change before and after the cutting of the silicon-based GaN wafer by the wafer cutting method according to the embodiment;
fig. 7 is a schematic flow chart illustrating a further wafer dicing method according to an embodiment of the present invention.
Detailed Description
In order to make the technical solutions of the present invention better understood, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and claims of the present invention and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the invention described herein are capable of operation in sequences other than those illustrated or described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
The wafer in this embodiment includes a plurality of chip units, and the front of wafer is provided with a plurality of scribing lines, includes the scribing line between any two adjacent chip units.
Fig. 4 is a schematic flow chart of a wafer dicing method according to an embodiment of the present invention, and referring to fig. 4, the wafer dicing method according to the embodiment includes the following steps:
and S110, cutting the back surface of the wafer to a first set depth by adopting a first laser according to the scribing line on the front surface of the wafer.
Specifically, the first laser and the second laser have high energy density, so that the temperature of the back surface and the front surface of the cut wafer can be sharply increased, the back surface and the front surface of the cut wafer are instantly melted and vaporized, and a cutting seam is formed on the back surface and the front surface of the wafer by matching with the movement of the platform, so that the purpose of cutting is achieved.
Referring to fig. 5, the wafer cutting device provided in this embodiment includes a laser, a beam expander, a reflector, and a focusing mirror, where the laser is used to emit first laser or second laser, and both the first laser and the second laser may be ultraviolet lasers. The beam expander is used for changing the diameter and the divergence angle of the laser beam emitted by the laser, and the reflector is used for changing the transmission direction of the laser.
Before cutting the back of the wafer, the wafer is fixed on a wafer carrying table of a cutting machine. When the first laser is used for cutting the back surface of the wafer, the scribing lines on the front surface of the wafer are aligned and identified through the microscope lens, so that the first laser can cut the back surface of the wafer according to the scribing lines on the front surface of the wafer. The cutting depth of the back surface of the wafer is a first set depth, and the first set depth can be less than one half of the thickness of the wafer before cutting.
And S120, cutting the front surface of the wafer by a second set depth along the scribing line of the front surface of the wafer by using a second laser to complete the cutting of the wafer, wherein the vertical projection of the cutting track of the back surface of the wafer on the front surface of the wafer is coincident with the cutting track of the front surface of the wafer.
Specifically, since the laser is focused by the focusing lens, the laser focusing effect decreases as the cutting depth increases, and the cut width of the surface also increases. In addition, due to the limitation of the depth of focus of the laser, the effective cutting depth of the laser cutting of the wafer is about 100-150 μm, and the cutting opening is increased when the cutting depth is increased and exceeds the limited range of the scribing street. When the thickness of the wafer is about 200 μm to 300 μm, the chip units in the wafer cannot be separated only by performing laser dicing on the back surface or the front surface of the wafer. In this embodiment, after the first laser cuts the back surface of the wafer by the first set depth, the second laser is then used to cut the front surface of the wafer, and the cutting track of the front surface of the wafer is the same as the cutting track of the back surface of the wafer, so that the laser can cut the wafer bidirectionally, and the chip units in the wafer can be effectively separated. After the wafer is cut by the second laser along the scribing line on the front surface of the wafer by the second set depth, the wafer is not cut subsequently, namely the wafer is cut.
Because laser belongs to contactless cutting, compare in traditional break bar cutting, laser cutting can not produce mechanical stress effect to the wafer, and the damage that produces the wafer is less. By adopting a double-sided laser cutting mode, the problem that the parameters and the reliability of a device are influenced by cracks caused to a passivation layer of a silicon-based gallium nitride chip and a gallium nitride epitaxial layer in the cutting process of the traditional cutter wheel cutting is solved. Fig. 6 is a schematic diagram of resistance changes before and after the silicon-based gallium nitride wafer is cut by using the wafer cutting method provided in this embodiment, and referring to fig. 6, before and after the wafer is cut by using the first laser and the second laser, the dynamic resistance value of the silicon-based gallium nitride chip hardly changes significantly, which shows that the wafer cutting method provided in this embodiment can improve damage to the chip unit in the wafer.
The embodiment provides a wafer cutting method, which comprises the following steps: and cutting the back surface of the wafer by a first set depth by adopting the first laser, and then cutting the front surface of the wafer by a second set depth by adopting the second laser, thereby completing the cutting of the wafer, wherein the cutting track of the back surface of the wafer is the same as the cutting track of the front surface of the wafer. Because the laser cutting of the wafer has little influence on the parameters of the chip units in the wafer, the laser cutting is adopted for both the back surface and the front surface of the wafer, so that the separation of the chip units in the cut wafer can be facilitated, the damage to the chip units can be reduced, and the influence on the parameters of the chip units is reduced. Therefore, the wafer cutting method provided by the embodiment can reduce or even eliminate damage and cracks to the chip unit in the wafer in the traditional cutter wheel cutting process, and solve the problem that the parameter and reliability of the chip unit in the wafer are degraded after the traditional cutter wheel cutting.
Optionally, the wafer comprises a silicon-based gallium nitride wafer.
Specifically, the thickness of the silicon-based gallium nitride wafer is usually about 200 μm to 300 μm, and by adopting the wafer cutting method provided by the embodiment, the front side and the back side of the silicon-based gallium nitride wafer are both subjected to laser cutting, so that the chip units in the cut silicon-based gallium nitride wafer can be effectively separated. In addition, by cutting the silicon-based gallium nitride wafer by using the wafer cutting method provided by the embodiment, the problems that the passivation layer and the gallium nitride epitaxial layer in the silicon-based gallium nitride chip are damaged and cracks affect the parameters and the reliability of the device can be avoided.
Optionally, the first set depth is 45% -50% of the thickness of the wafer before cutting; the second set depth is 45% -50% of the thickness of the wafer before cutting.
Specifically, the first set depth may be equal to the second set depth, and the first set depth may not be equal to the second set depth. After the first set depth is cut on the back surface of the wafer by the first laser and the second set depth is cut on the front surface of the wafer by the second laser, the uncut thickness of the area where the scribing line is located in the wafer can be within 10% of the uncut thickness of the wafer. When the thickness of the wafer at the scribing line is within 10% of the thickness of the wafer before cutting, the film expansion of the wafer can not damage the chip units in the wafer, and the chip units can be separated from the wafer.
It should be noted that the first set depth and the second set depth cannot be 50% of the thickness of the wafer before the wafer is diced at the same time, so that the UV film in the wafer after the second laser dicing can be prevented from being scratched by the laser to cause the chip units in the wafer to fall off.
Optionally, cutting the front surface of the wafer by a second set depth along the scribe line on the front surface of the wafer by using a second laser, so as to complete the cutting of the wafer, and then: and carrying out film expansion on the wafer to obtain a plurality of chip units.
Specifically, after the front surface of the wafer is cut to the second set depth by the second laser, each chip unit on the wafer can be separated by only expanding the film of the wafer in the subsequent packaging process, so that a plurality of chip units are obtained.
Optionally, before cutting the back side of the wafer by a first set depth according to the scribe line on the front side of the wafer by using the first laser, the method includes: forming a first UV film on the front surface of the wafer, and fixing the wafer on a wafer carrying table of the cutting machine through the first UV film; and forming a first protective adhesive on the back surface of the wafer.
Specifically, before the back surface of the wafer is cut, a first UV film needs to be attached to the front surface of the wafer. The first UV film can fix the wafer on a wafer carrying table of the cutting machine, so that the wafer is prevented from moving when the back surface of the wafer is cut by the first laser. Since the first laser generates debris and dross during the cutting of the back surface of the wafer, and the generated debris and dross contaminate the back surface of the wafer, a layer of first protective glue is required to be coated on the back surface of the wafer, and the first protective glue can prevent the debris and dross from contaminating the back surface of the wafer.
Optionally, cutting the front surface of the wafer by a second set depth along the scribe line on the front surface of the wafer by using a second laser, so as to complete the cutting of the wafer, including: forming a second UV film on the back of the wafer, and fixing the wafer on a wafer carrying table of the cutting machine through the second UV film; and forming a second protective adhesive on the front surface of the wafer.
Specifically, after the back of the wafer is cut by the first laser, a layer of second UV film needs to be attached to the back of the wafer before the front of the wafer is cut by the second laser, and the wafer can be fixed on the wafer carrying table of the cutting machine by the second UV film, so that the wafer is prevented from moving when the front of the wafer is cut by the second laser. Since the second laser also generates debris and dross during the cutting of the front surface of the wafer, and the generated debris and dross contaminate the front surface of the wafer, a layer of second protective glue needs to be coated on the front surface of the wafer, and the second protective glue can prevent the debris and dross from contaminating the front surface of the wafer.
Optionally, after the cutting the back side of the wafer by the first set depth according to the scribe line on the front side of the wafer by using the first laser, the method further includes: and removing the first protective glue and the debris and slag generated in the first laser cutting process.
Specifically, before the front side of the wafer is cut by the second laser, the wafer needs to be washed by deionized water, so that the first protective glue and debris and slag generated in the first laser cutting process are removed.
Optionally, cutting the front surface of the wafer by a second set depth along the scribe line on the front surface of the wafer by using a second laser, so as to complete the cutting of the wafer, and then: and removing the second protective glue and the scraps and slag generated in the second laser cutting process.
Specifically, after the front side of the wafer is cut by the second laser, the wafer also needs to be washed by deionized water, so that the second protective glue and debris and slag generated in the second laser cutting process are removed.
Optionally, the energy of the first laser is not equal to the energy of the second laser.
Specifically, the energy of the first laser and the energy of the second laser affect the degree of dicing of the wafer. The front surface of the wafer and the back surface of the wafer are slightly different in cutting material, for example, the back surface of the wafer sometimes has Ti/Ni/Ag or V/Ni/Ag multilayer metal with a thickness of 0.5 μm to 1.5 μm, therefore, the energy of the first laser is set to be larger than that of the second laser, so that the first laser can cut through the Ti/Ni/Ag or V/Ni/Ag multilayer metal.
Optionally, the energy of the first laser is equal to the energy of the second laser.
Specifically, when the cutting materials of the front surface of the wafer and the back surface of the wafer are the same, the energy of the first laser and the energy of the second laser may be set to be the same. The energy of the first laser is equal to that of the second laser, and the cutting materials of the front surface of the wafer and the back surface of the wafer are the same, and the cutting depth of the first laser to the wafer is the same as that of the second laser to the wafer.
Optionally, the first protective glue and the second protective glue both have light transmittance.
Specifically, when the first protective glue and the second protective glue have light transmittance, the first laser and the second laser can penetrate through the first protective glue and the second protective glue, so that the first protective glue and the second protective glue are prevented from absorbing the first laser and the second laser. In addition, when the second protective glue has light transmission, the scribing lines can be observed when the front surface of the wafer is cut by the second laser, and the cutting deviation caused by the deviation of the second laser from the scribing lines is prevented.
Fig. 7 is a schematic flowchart of another wafer dicing method according to an embodiment of the present invention, and referring to fig. 7, the wafer dicing method according to the embodiment includes the following steps:
and S210, forming a first UV film on the front surface of the wafer, and fixing the wafer on a wafer carrying table of the cutting machine through the first UV film.
And S220, forming a first protective adhesive on the back of the wafer.
And S230, cutting the back surface of the wafer to a first set depth according to the scribing line on the front surface of the wafer by adopting a first laser.
And S240, removing the first protective glue and the debris and the slag generated in the first laser cutting process.
And S250, forming a second UV film on the back surface of the wafer, and fixing the wafer on a wafer carrying table of the cutting machine through the second UV film.
And S260, forming a second protective adhesive on the front surface of the wafer.
And S270, cutting the front surface of the wafer by a second set depth along the scribing line of the front surface of the wafer by using a second laser to complete the cutting of the wafer, wherein the vertical projection of the cutting track of the back surface of the wafer on the front surface of the wafer is coincident with the cutting track of the front surface of the wafer.
And S280, removing the second protective glue and the scraps and the slag generated in the second laser cutting process.
And S290, performing film expansion on the wafer to obtain a plurality of chip units.
It should be understood that various forms of the flows shown above may be used, with steps reordered, added, or deleted. For example, the steps described in the present invention may be executed in parallel, sequentially, or in different orders, and are not limited herein as long as the desired results of the technical solution of the present invention can be achieved.
The above-described embodiments should not be construed as limiting the scope of the invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions may be made, depending on design requirements and other factors. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A wafer cutting method is characterized in that the wafer comprises a plurality of chip units, a plurality of scribing lines are arranged on the front surface of the wafer, and the scribing lines are arranged between any two adjacent chip units;
the wafer cutting method comprises the following steps:
cutting the back surface of the wafer by a first set depth according to the scribing line on the front surface of the wafer by adopting first laser;
and cutting the front surface of the wafer by a second set depth along the scribing line of the front surface of the wafer by using a second laser to complete the cutting of the wafer, wherein the vertical projection of the cutting track of the back surface of the wafer on the front surface of the wafer is coincident with the cutting track of the front surface of the wafer.
2. The wafer dicing method of claim 1, wherein the wafer comprises a silicon-based gallium nitride wafer.
3. The wafer cutting method according to claim 1, wherein the first set depth is 45% -50% of the thickness of the wafer before cutting;
the second set depth is 45% -50% of the thickness of the wafer before cutting.
4. The wafer cutting method according to claim 1, wherein the cutting the front side of the wafer along the scribe line of the front side of the wafer by the second laser to the second set depth further comprises:
and carrying out film expansion on the wafer to obtain a plurality of chip units.
5. The wafer cutting method according to claim 1, wherein before the cutting the back side of the wafer to the first set depth according to the scribing line on the front side of the wafer by the first laser comprises:
forming a first UV film on the front surface of the wafer, and fixing the wafer on a wafer carrying table of a cutting machine through the first UV film;
and forming a first protective adhesive on the back surface of the wafer.
6. The wafer cutting method according to claim 5, wherein the cutting the front side of the wafer to a second set depth along the scribing line of the front side of the wafer by using the second laser to complete the cutting of the wafer comprises:
forming a second UV film on the back of the wafer, and fixing the wafer on a wafer carrying table of a cutting machine through the second UV film;
and forming a second protective adhesive on the front surface of the wafer.
7. The wafer cutting method according to claim 5, wherein after the cutting the back side of the wafer by the first set depth according to the scribing line on the front side of the wafer by the first laser, the method further comprises:
and removing the first protective glue and the debris and slag generated in the first laser cutting process.
8. The wafer cutting method according to claim 6, wherein the cutting the front side of the wafer along the scribing line of the front side of the wafer by the second laser to the second set depth comprises:
and removing the second protective glue and the scraps and slag generated in the second laser cutting process.
9. The wafer dicing method according to claim 1, wherein the energy of the first laser is not equal to the energy of the second laser.
10. The wafer dicing method according to claim 6, wherein the first protective paste and the second protective paste are both light-transmissive.
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| CN110091075A (en) * | 2019-05-31 | 2019-08-06 | 大族激光科技产业集团股份有限公司 | Wafer grooving method and device |
| CN111029301A (en) * | 2019-11-29 | 2020-04-17 | 厦门市三安集成电路有限公司 | Processing method of silicon carbide-based wafer |
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