CN102693941A

CN102693941A - Wafer cutting process

Info

Publication number: CN102693941A
Application number: CN2011101791478A
Authority: CN
Inventors: 陈崇龙
Original assignee: Chipmos Technologies Inc
Current assignee: Chipmos Technologies Inc
Priority date: 2011-03-25
Filing date: 2011-06-20
Publication date: 2012-09-26
Anticipated expiration: 2031-06-20
Also published as: TWI455199B; TW201239976A; CN102693941B

Abstract

A wafer dicing process is provided, wherein a wafer is provided. The wafer has a front surface and a back surface. Then, a grinding patch is attached to the front surface of the wafer, and the back surface of the wafer is precut to form a plurality of cutting channels on the back surface of the wafer. Then, the back side of the wafer is polished to reduce the thickness of the wafer and the depth of the scribe line. The abrasive patch is then removed. And then, attaching a cutting patch to the back surface of the wafer, and cutting the front surface of the wafer to form a plurality of chips separated from each other.

Description

Wafer cutting processing procedure

Technical field

The invention relates to a kind of manufacture of semiconductor, and particularly relevant for a kind of wafer cutting processing procedure.

Background technology

Along with science and technology is maked rapid progress, (integrated circuits, IC) element has been widely used in the middle of our daily life integrated circuit.Generally speaking, the production of integrated circuit mainly is divided into three phases: the manufacturing of semiconductor crystal wafer (wafer), the making of integrated circuit and the encapsulation of integrated circuit.

In addition, on semiconductor crystal wafer, make after the integrated circuit, can cut to form a plurality of chips (chip) semiconductor crystal wafer.In general, above-mentioned cutting processing procedure normally attaches grinding paster (grinding tape) prior to the front of wafer, and the back side of grinding wafer, to reduce the thickness of wafer.Then, remove the grinding paster.Then, attach the first cutting paster (saw tape) in the back side of wafer, and the front of cutting crystal wafer, on the front of wafer, to form Cutting Road.Then, remove the first cutting paster.Afterwards, attach the second cutting paster in the front of wafer, and the back side of cutting crystal wafer, to form a plurality of chips.

Yet; In above-mentioned cutting processing procedure; After the back side of cutting crystal wafer, tend to produce the back of the body and collapse (chipping) phenomenon; Promptly chip can collide or because of cutting stress causes the back side of chip impaired each other at the back side of cutting crystal wafer and after forming a plurality of chips, thereby influences the quality of formed chip.

Summary of the invention

In view of this, the object of the invention is exactly that a kind of wafer cutting processing procedure is being provided, and it can solve the problem that wafer damages because of the back of the body collapses.

The present invention proposes a kind of wafer cutting processing procedure, and it provides wafer earlier.Wafer has the front and the back side.Then, attach the grinding paster in the front of wafer, and the back side of precut (pre-cutting) wafer, on the back side of wafer, to form a plurality of Cutting Roads.Then, grind the back side of wafer, with the thickness of minimizing wafer and the degree of depth of Cutting Road.Then, remove the grinding paster.Afterwards, attach the first cutting paster in the back side of wafer, and the front of cutting crystal wafer, to form a plurality of chips separated from one another.

According to the described wafer cutting of embodiment of the invention processing procedure, above-mentioned wafer for example has a plurality of projections (bump), and these projection arrayed are in the front of wafer.

According to the described wafer cutting of embodiment of the invention processing procedure, the method at the back side of above-mentioned precut wafer for example is will be pasted with the wafer that grinds paster earlier to place on the second cutting paster, wherein grinds paster and contacts with the second cutting paster.Afterwards, on the back side of wafer, form Cutting Road.

According to the described wafer cutting of embodiment of the invention processing procedure, after the back side of precut wafer, can also remove the second cutting paster.

According to the described wafer cutting of embodiment of the invention processing procedure, the method at the back side of above-mentioned precut wafer for example is to carry out laser cutting, machine cuts or etching.

According to the described wafer cutting of embodiment of the invention processing procedure, above-mentioned grinding paster for example is after wafer is ground, to be removed.

In the present invention, after the back side to wafer precuts, the back side of wafer is ground, therefore the damage so that cause because of the back of the body collapses at the back side that removes wafer can form the chip with better quality.

For letting the above-mentioned feature and advantage of the present invention can be more obviously understandable, hereinafter is special lifts embodiment, and conjunction with figs., elaborates as follows.

Description of drawings

Figure 1A to Fig. 1 E is the generalized section according to the wafer cutting processing procedure that the embodiment of the invention illustrated.

[main element symbol description]

100: wafer

100a: front

100b: the back side

102: projection

104: grind paster

106,112: the cutting paster

108: Cutting Road

110: the zone

114: chip

Embodiment

Figure 1A to Fig. 1 E is the generalized section according to the wafer cutting processing procedure that the embodiment of the invention illustrated.At first, please with reference to Figure 1A, wafer 100 is provided.Wafer 100 has positive 100a and back side 100b.Positive 100a is an active surface, has a plurality of projections 102 on it.Projection 102 for example is silver-colored projection, copper gold projection or golden projection.Projection 102 for example is that arrayed is on the positive 100a of wafer 100.Then, go up attaching in the positive 100a of wafer 100 and grind paster 104.

Please, place on the cutting paster 106, grinding paster 104 is contacted with cutting paster 106 being pasted with the wafer 100 that grinds paster 104 with reference to Figure 1B.Afterwards, precut step, the back side 100b of cutting crystal wafer 100 is so that 100b goes up a plurality of Cutting Roads 108 of formation in the back side of wafer 100.The method of the back side 100b of cutting crystal wafer 100 for example is to carry out laser cutting, machine cuts (for example using cutter) or etching.It should be noted that in this step, wafer 100 is not cut into the chip of a plurality of separation, that is Cutting Road 108 does not run through wafer 100.

In addition, after forming Cutting Road 108, the back side 100b of wafer 100 may damage because of the cutting stress influence produces at regional 110 places, and this is the back of the body of knowing and collapses phenomenon.

Then, please with reference to Fig. 1 C, remove cutting paster 106.Afterwards, grind the back side 100b of wafer 100, with the thickness of minimizing wafer 100 and the degree of depth of Cutting Road 108.Special one what carry is after grinding the back side 100b of wafer 100, to be removed in the lump because of the back of the body collapses the damage that causes at regional 110 places, thereby to have solved the impaired problem in the back side of formed chip in the prior art.

Then, please with reference to Fig. 1 D, remove and grind paster 104.Then, 100b attaches cutting paster 112 in the back side of wafer 100.

Afterwards, carry out cutting step, corresponding to the Cutting Road 108 on the back side 100b of wafer 100, the positive 100a of cutting crystal wafer 100 is to form a plurality of chips separated from one another 114.Special one carry be, when the positive 100a of cutting crystal wafer 100, if use cutter to cut, the width of employed cutter when then the width of employed cutter is greater than the back side 100b of cutting crystal wafer 100.

In sum, in wafer cutting processing procedure of the present invention, the front that the first back side to wafer precuts cutting crystal wafer again forms a plurality of chips, and after precut, the back side of wafer is ground.Thus, the damage that cause because of the back of the body collapses at the back side of wafer can be removed in the process of grinding, thereby can form the chip with better quality.

Though the present invention discloses as above with embodiment; Right its is not in order to limit the present invention; Has common knowledge the knowledgeable in the technical field under any; Do not breaking away from the spirit and scope of the present invention, when can doing a little change and retouching, so protection scope of the present invention is when being as the criterion with what claim defined.

Claims

1. a wafer cuts processing procedure, comprising:

Wafer is provided, and this wafer has the front and the back side;

Attach the grinding paster in this front of this wafer, and this back side of precut this wafer, on this back side of this wafer, to form a plurality of Cutting Roads;

Grind this back side of this wafer, with the thickness that reduces this wafer and the degree of depth of those Cutting Roads;

Remove this grinding paster; And

Attach the first cutting paster in this back side of this wafer, and this front of cutting this wafer, to form a plurality of chips separated from one another.

2. wafer cutting processing procedure as claimed in claim 1 it is characterized in that this wafer has a plurality of projections, and those projection arrayed is in this front of this wafer.

3. wafer cutting processing procedure as claimed in claim 1 is characterized in that the method at this back side of precut this wafer comprises:

This wafer that is pasted with this grinding paster is placed on the second cutting paster, wherein should grind paster and contact with this second cutting paster; And

On this back side of this wafer, form those Cutting Roads.

4. wafer cutting processing procedure as claimed in claim 3 is characterized in that the method at this back side of precut this wafer more comprises:

After this back side of precut this wafer, remove this second cutting paster.

5. wafer cutting processing procedure as claimed in claim 1 is characterized in that the method at this back side of precut this wafer comprises carries out laser cutting, machine cuts or etching.

6. wafer cutting processing procedure as claimed in claim 1 is characterized in that this grinding paster is after this wafer is ground, to be removed.