CN102610476A - Electrostatic chuck - Google Patents
Electrostatic chuck Download PDFInfo
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- CN102610476A CN102610476A CN2012100631368A CN201210063136A CN102610476A CN 102610476 A CN102610476 A CN 102610476A CN 2012100631368 A CN2012100631368 A CN 2012100631368A CN 201210063136 A CN201210063136 A CN 201210063136A CN 102610476 A CN102610476 A CN 102610476A
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- electrostatic chuck
- electrode
- distance
- tapered
- annular electrodes
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Abstract
The invention discloses an electrostatic chuck, which comprises an upper surface. An electrode is arranged inside the electrostatic chuck, the distance between the electrode and the upper surface of the electrostatic chuck is different from that between another electrode and the upper surface, and the electrode is simultaneously connected with a direct-current power supply and a radio-frequency power source. The etching/deposition rate of the edge of the electrostatic chuck can be compensated, so that effectiveness of the electrostatic chuck is ensured.
Description
Technical field
The present invention relates to a kind of electrostatic chuck, particularly a kind of electrostatic chuck internal electrode is to the different electrostatic chuck of electrostatic chuck upper surface distance.
Background technology
The edge effect of semiconductor arts piece is a problem of puzzlement semiconductor industry.The edge effect of so-called semiconductor arts piece is meant in plasma treatment procedure; Because plasma receives electric field controls; And the field intensity of the two poles of the earth edge can receive ectocine up and down; Total some electric field line is crooked, and causes electric field marginal portion field intensity uneven, and then causes the plasma density of this part inhomogeneous.Under this kind situation, also exist a circle to handle uneven zone around the semiconductor arts piece of producing.
Because semiconductor arts piece is circular, therefore more the outer ring area is bigger, and the not good rate of finished products that will cause of the homogeneity of each process procedure of marginal portion significantly descends.In the today of generally adopting the 300mm processing procedure, the loss that the semiconductor arts piece edge effect brings is more huge.
Therefore, need in the industry to improve edge effect simply and effectively, improve the processing procedure homogeneity.
Summary of the invention
The purpose of this invention is to provide a kind of electrostatic chuck, etching/deposition that can compensated for electrostatic sucker edge, thus guarantee the validity of electrostatic chuck.
In order to realize above purpose, the present invention realizes through following technical scheme:
The present invention provides a kind of electrostatic chuck, and said electrostatic chuck comprises a upper surface, and said electrostatic chuck inside is provided with an electrode, and said electrode is different to the distance of said electrostatic chuck upper surface, and said electrode connects DC power supply and radio frequency power source simultaneously.
Said electrode is divided into several annular electrodes, and described several annular electrodes are stepped to be distributed in the electrostatic chuck, and said several annular electrodes are electrically connected successively.
Described several annular electrodes are provided with one heart.
The diameter of described several annular electrodes is different.
Described several annular electrodes reduce along with the increase of the diameter of annular electrode apart from the distance of electrostatic chuck upper surface.
Described several annular electrodes increase along with the increase of the diameter of annular electrode apart from the distance of electrostatic chuck upper surface.
Described electrostatic chuck internal electrode is tapered, and said tapered electrode reduces along with the increase of the diameter of tapered electrode apart from the distance of electrostatic chuck upper surface.
Described electrostatic chuck internal electrode is tapered, and said tapered electrode increases along with the increase of the diameter of tapered electrode apart from the distance of electrostatic chuck upper surface.
Described electrostatic chuck comprises the several layers dielectric layer, and described each annular electrode is located at respectively in the variant dielectric layer, and the dielectric material of described each layer dielectric layer is different.
The height of described every layer of dielectric layer is not more than 0.5mm.
The present invention compared with prior art; It is even through the plasma density that the electrostatic chuck internal electrode regulates said electrostatic chuck top apart from difference to said electrostatic chuck upper surface is set; Thereby etching/deposition that can compensated for electrostatic sucker edge realizes the uniform treatment for process substrates.
Description of drawings
Fig. 1 is the structural representation of the plasma processing chamber at electrostatic chuck according to the invention place;
The structural representation of one of embodiment of the electrostatic chuck that Fig. 2 is provided with step electrode for the present invention is a kind of;
Two the structural representation of the embodiment of the electrostatic chuck that Fig. 3 is provided with step electrode for the present invention is a kind of;
Three the structural representation of the embodiment of the electrostatic chuck that Fig. 4 is provided with step electrode for the present invention is a kind of;
Four the structural representation of the embodiment of the electrostatic chuck that Fig. 5 is provided with tapered electrode for the present invention is a kind of;
Four the structural representation of the embodiment of the electrostatic chuck that Fig. 6 is provided with tapered electrode for the present invention is a kind of.
Embodiment
Below in conjunction with accompanying drawing,, the present invention is done further elaboration through specifying a preferable specific embodiment.
Shown in Fig. 1 ~ 4; A kind of electrostatic chuck 10 that is provided with step electrode, support belt treatment substrate 11 comprises on it: several annular electrodes 1, described several annular electrode 1 stepped being distributed in the electrostatic chuck 10; These several annular electrodes 1 are electrically connected successively; Can adjacent annular electrode 1 be linked together through circuit, also can make annular electrode 1 be electrically connected successively through other modes such as sheet metals.In each embodiment of the present invention, these several annular electrodes 1 be provided with one heart and diameter different, thereby these several annular electrodes 1 just constituted from electrostatic chuck 10 the mind-set edge stepped layout of extending.
One of embodiment:
Like Fig. 1, shown in Figure 2; Described several annular electrodes 1 reduce along with the increase of the diameter of annular electrode 1 apart from the distance of electrostatic chuck 10 upper surfaces; Thereby; Several annular electrodes 1 have just formed the stepped layout that the center is low, the edge is high, and these several annular electrodes 1 are electrically connected successively, and in electrostatic chuck 10, introduce high-voltage DC power supply (like 700V) and radio-frequency current through circuit.
Because it is big more apart from the distance of electrostatic chuck 10 upper surfaces; Then each annular electrode 1 is big more with the thickness of the dielectric material of that section stylolitic part of electrostatic chuck 10 upper surfaces; Equivalent capacity between annular electrode 1 and electrostatic chuck 10 upper surfaces is also just more little; High-voltage DC power supply 4 is just few more with the loss that radio frequency power source 5 passes through, and the plasma concentration of generation is lower, and corresponding etching rate is just low more.
Therefore; After introducing high-voltage DC power supply 4 and radio frequency power source 5 in the electrostatic chuck 10; Because the annular electrode 1 of stepped distribution in the present embodiment; Make that the plasma concentration that bottom electrode 3 produces in electrostatic chuck 10 bases in the plasma processing chamber 100 is uneven; The problem that typically is higher than the marginal portion like the interior consistency of capacitance coupling type plasma processing chamber is improved, and the plasma concentration of marginal portion is compensated, through changing the distance of annular electrode 1 and electrostatic chuck 10 upper surfaces; The final compensation plasma concentration that obtains a best of regulating; Make the bottom electrode 3 of plasma processing chamber 100 and the plasma concentration of the homogeneous of electric field stack generation that the annular electrode in the electrostatic chuck 10 1 produces distribute, can guarantee etching/deposition rising at the edge of electrostatic chuck 10, the etching/deposition at compensated for electrostatic sucker 10 edges.
Two of embodiment:
Like Fig. 1, shown in Figure 3; Several annular electrodes 1 increase along with the increase of the diameter of annular electrode 1 apart from the distance of electrostatic chuck 10 upper surfaces; Thereby; Several annular electrodes 1 have just formed height of center, stepped layout that the edge is low, and these several annular electrodes 1 are electrically connected successively, and in electrostatic chuck 10, introduce high-voltage DC power supply 4 and radio frequency power source 5 through circuit.
Because it is big more apart from the distance of electrostatic chuck 10 upper surfaces; Then each annular electrode 1 is big more with the thickness of the dielectric material of that section stylolitic part of electrostatic chuck 10 upper surfaces; Equivalent capacity between annular electrode 1 and electrostatic chuck 10 upper surfaces is also just more little; What completely cut off when high-voltage DC power supply 4 passes through is just few more, and the etching rate in respective edges zone is just low more.
In inductance coupling high formula plasma processing chamber, because low in the middle of the plasma density that produces, the edge is high, adopts the described height of center of present embodiment, and the stepped annular electrode that the edge is low has well solved the uneven problem of this plasma distribution.
Three of embodiment:
Like Fig. 1, shown in Figure 4, in the present embodiment, several annular electrodes 1 are located at respectively in the different dielectric layer 2, and the dielectric material of every layer of dielectric layer 2 is different, and the height of every layer of dielectric layer 2 is not more than 0.5mm.Different dielectric materials has different dielectric constants, therefore, has obtained the effect identical with two of one of embodiment and embodiment; Promptly changed the equivalent capacity between annular electrode 1 and electrostatic chuck 10 upper surfaces; Thereby, making that the plasma concentration that bottom electrode produces in original electrostatic chuck 10 bases is uneven, the problem that typically is higher than the marginal portion like consistency is improved; The plasma concentration of marginal portion is compensated; Through changing dielectric material, the final compensation plasma concentration that obtains a best of regulating, the plasma concentration that the electric field stack that makes bottom electrode 3 and annular electrode 1 in the electrostatic chuck 10 in the base produce produces a homogeneous distributes; Etching/the deposition that can guarantee the edge of electrostatic chuck 10 rises the etching/deposition at compensated for electrostatic sucker 10 edges.
Four of embodiment:
Like Fig. 1, Fig. 5, shown in Figure 6; Electrostatic chuck 10 internal electrodes 1 are conical; Fig. 5 illustrates tapered electrode 1 and reduces along with the increase of the diameter of annular electrode 1 to the distance of electrostatic chuck 10 upper surfaces; Thereby formed the conical structure that center shown in Figure 5 is low, the edge is high, this tapered electrode connects high-voltage DC power supply 4 and radio frequency power source 5 simultaneously.
Because it is big more apart from the distance of electrostatic chuck 10 upper surfaces; The thickness of the dielectric material between electrode and the electrostatic chuck upper surface is big more; Equivalent capacity between annular electrode 1 and the electrostatic chuck upper surface is also just more little; What completely cut off when high-voltage DC power supply 4 passes through is just few more, and corresponding etching rate is just low more.
Adopt the described technical scheme of present embodiment; The problem that typically is higher than the marginal portion like the interior consistency of capacitance coupling type plasma processing chamber is improved; The plasma concentration of marginal portion is compensated; Through the distance of change annular electrode 1 with electrostatic chuck 10 upper surfaces, final adjusting obtains the compensation plasma concentration an of the best, makes the bottom electrode 3 of plasma processing chamber 100 and the plasma concentration of the homogeneous of electric field stack generation that the annular electrode in the electrostatic chuck 10 1 produces distribute; Etching/the deposition that can guarantee the edge of electrostatic chuck 10 rises the etching/deposition at compensated for electrostatic sucker 10 edges.
In like manner, shown in Figure 6 similar, be used at inductance coupling high formula plasma processing chamber; Because low in the middle of the plasma density that produces, the edge is high, adopts the described height of center of Fig. 6; The tapered electrode that the edge is low has well solved the uneven problem of this plasma distribution.
In sum, a kind of electrostatic chuck of the present invention, etching/deposition that can compensated for electrostatic sucker edge, thus guarantee the validity of electrostatic chuck.
Although content of the present invention has been done detailed introduction through above-mentioned preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.After those skilled in the art have read foregoing, for multiple modification of the present invention with to substitute all will be conspicuous.Therefore, protection scope of the present invention should be limited appended claim.
Claims (10)
1. electrostatic chuck, said electrostatic chuck comprises a upper surface, it is characterized in that, and said electrostatic chuck inside is provided with an electrode, and said electrode is different to the distance of said electrostatic chuck upper surface, and said electrode connects DC power supply and radio frequency power source simultaneously.
2. electrostatic chuck according to claim 1 is characterized in that said electrode is divided into several annular electrodes, and described several annular electrodes are stepped to be distributed in the electrostatic chuck, and said several annular electrodes are electrically connected successively.
3. electrostatic chuck according to claim 2 is characterized in that, described several annular electrodes are provided with one heart.
4. according to claim 2 or 3 described electrostatic chucks, it is characterized in that the diameter of described several annular electrodes is different.
5. electrostatic chuck according to claim 4 is characterized in that, described several annular electrodes reduce along with the increase of the diameter of annular electrode (1) apart from the distance of electrostatic chuck upper surface.
6. electrostatic chuck according to claim 4 is characterized in that, described several annular electrodes (1) increase along with the increase of the diameter of annular electrode (1) apart from the distance of electrostatic chuck upper surface.
7. electrostatic chuck according to claim 1 is characterized in that, described electrostatic chuck internal electrode is tapered, and said tapered electrode reduces along with the increase of the diameter of tapered electrode apart from the distance of electrostatic chuck upper surface.
8. electrostatic chuck according to claim 1 is characterized in that, described electrostatic chuck internal electrode is tapered, and said tapered electrode increases along with the increase of the diameter of tapered electrode apart from the distance of electrostatic chuck upper surface.
9. electrostatic chuck according to claim 2; It is characterized in that; Described electrostatic chuck comprises several layers dielectric layer (2), and described each annular electrode (1) is located at respectively in the variant dielectric layer (2), and the dielectric material of described each layer dielectric layer (2) is different.
10. the electrostatic chuck that is provided with step electrode according to claim 9 is characterized in that, the height of described every layer of dielectric layer (2) is not more than 0.5mm.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210063136.8A CN102610476B (en) | 2012-03-12 | 2012-03-12 | Electrostatic chuck |
| TW101144196A TW201338090A (en) | 2012-03-12 | 2012-11-26 | Electrostatic sucking disc |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210063136.8A CN102610476B (en) | 2012-03-12 | 2012-03-12 | Electrostatic chuck |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102610476A true CN102610476A (en) | 2012-07-25 |
| CN102610476B CN102610476B (en) | 2015-05-27 |
Family
ID=46527771
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210063136.8A Active CN102610476B (en) | 2012-03-12 | 2012-03-12 | Electrostatic chuck |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102610476B (en) |
| TW (1) | TW201338090A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105789107A (en) * | 2014-12-26 | 2016-07-20 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Base and plasma processing equipment |
| CN106816354A (en) * | 2015-12-02 | 2017-06-09 | 北京北方微电子基地设备工艺研究中心有限责任公司 | A kind of bottom electrode and reaction chamber |
| CN111052344A (en) * | 2018-08-13 | 2020-04-21 | 朗姆研究公司 | Replaceable and/or collapsible edge ring assembly incorporating edge ring positioning and centering functions for plasma sheath adjustment |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1745463A (en) * | 2003-02-03 | 2006-03-08 | 日本奥特克株式会社 | Plasma processing apparatus, electrode plate for plasma processing apparatus, and electrode plate manufacturing method |
| CN102067737A (en) * | 2008-06-23 | 2011-05-18 | 应用材料公司 | Cathode with inner and outer electrodes at different heights |
| CN102280342A (en) * | 2011-08-19 | 2011-12-14 | 中微半导体设备(上海)有限公司 | Plasma treatment device |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW334609B (en) * | 1996-09-19 | 1998-06-21 | Hitachi Ltd | Electrostatic chuck, method and device for processing sanyle use the same |
| JP4421874B2 (en) * | 2003-10-31 | 2010-02-24 | 東京エレクトロン株式会社 | Plasma processing apparatus and plasma processing method |
| KR100755874B1 (en) * | 2005-11-30 | 2007-09-05 | 주식회사 아이피에스 | Electrostatic chuck for vacuum processing apparatus, processing apparatus having same and method for manufacturing same |
| KR100995250B1 (en) * | 2008-09-09 | 2010-11-18 | 주식회사 코미코 | Electrostatic chuck containing buffer layer for reducing thermal stress |
| KR100984751B1 (en) * | 2008-09-09 | 2010-10-01 | 주식회사 코미코 | Electrostatic chuck containing double buffer layer for reducing thermal stress |
| KR100997374B1 (en) * | 2009-08-21 | 2010-11-30 | 주식회사 코미코 | Electrode static chuck and method of manufacturing the same |
-
2012
- 2012-03-12 CN CN201210063136.8A patent/CN102610476B/en active Active
- 2012-11-26 TW TW101144196A patent/TW201338090A/en unknown
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1745463A (en) * | 2003-02-03 | 2006-03-08 | 日本奥特克株式会社 | Plasma processing apparatus, electrode plate for plasma processing apparatus, and electrode plate manufacturing method |
| CN102067737A (en) * | 2008-06-23 | 2011-05-18 | 应用材料公司 | Cathode with inner and outer electrodes at different heights |
| CN102280342A (en) * | 2011-08-19 | 2011-12-14 | 中微半导体设备(上海)有限公司 | Plasma treatment device |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105789107A (en) * | 2014-12-26 | 2016-07-20 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Base and plasma processing equipment |
| CN106816354A (en) * | 2015-12-02 | 2017-06-09 | 北京北方微电子基地设备工艺研究中心有限责任公司 | A kind of bottom electrode and reaction chamber |
| CN106816354B (en) * | 2015-12-02 | 2019-08-23 | 北京北方华创微电子装备有限公司 | A kind of lower electrode and reaction chamber |
| CN111052344A (en) * | 2018-08-13 | 2020-04-21 | 朗姆研究公司 | Replaceable and/or collapsible edge ring assembly incorporating edge ring positioning and centering functions for plasma sheath adjustment |
| CN111052344B (en) * | 2018-08-13 | 2024-04-02 | 朗姆研究公司 | Edge ring assembly |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI497640B (en) | 2015-08-21 |
| TW201338090A (en) | 2013-09-16 |
| CN102610476B (en) | 2015-05-27 |
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| C14 | Grant of patent or utility model | ||
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
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| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210202 Address after: 201201 Shanghai City Jingqiao export processing zone of Pudong New Area (South) Taihua Road No. 188 Patentee after: China micro semiconductor equipment (Shanghai) Co.,Ltd. Patentee after: Nanchang Medium and Micro Semiconductor Equipment Co.,Ltd. Address before: 201201 Shanghai City Jingqiao export processing zone of Pudong New Area (South) Taihua Road No. 188 Patentee before: China micro semiconductor equipment (Shanghai) Co.,Ltd. |