CN105632860B - Plasma processing apparatus - Google Patents
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- CN105632860B CN105632860B CN201410604520.3A CN201410604520A CN105632860B CN 105632860 B CN105632860 B CN 105632860B CN 201410604520 A CN201410604520 A CN 201410604520A CN 105632860 B CN105632860 B CN 105632860B
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Abstract
The invention provides plasma processing equipment which comprises a reaction chamber, a base used for bearing a workpiece to be processed and a radio frequency antenna device, wherein the radio frequency antenna device comprises an inductance coil, an electrode plate group and a radio frequency source, the inductance coil and the electrode plate group are mutually connected in parallel and are electrically connected with the radio frequency source, and the inductance coil and the electrode plate group are arranged at the top of the reaction chamber and respectively correspond to different positions of the base. According to the plasma processing equipment provided by the invention, on the basis of generating the plasma by using the inductance coil, the electrode plate group is used for generating the plasma, so that the effect of adjusting the distribution density of the plasma corresponding to different positions of the base can be achieved, the etching result among the processed workpieces on the base tends to be uniform, and the etching uniformity can be improved.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to plasma processing equipment.
Background
With the rapid development of electronic technology, the demand for the integration level of integrated circuits is higher and higher, which requires the enterprises producing integrated circuits to continuously improve the processing capability of semiconductor wafers. Currently, in conventional semiconductor manufacturing and the like processes, various types of plasma processing apparatuses have been used, for example, a Capacitively Coupled Plasma (CCP) type, an Inductively Coupled Plasma (ICP) type, and a surface wave or electron cyclotron resonance plasma (ECR) type, and the like. The equipment for generating the plasma by utilizing the capacitive coupling has a simple structure, is easy to generate the plasma which is uniformly distributed in a large area, and is suitable for etching films of media and other types; the device for generating the plasma by utilizing the inductive coupling can obtain high-density plasma under lower working air pressure, can independently and respectively control the radio frequency source for generating the plasma and the substrate table radio frequency source, and is suitable for etching materials such as metal, semiconductor and the like.
The PSS (Patterned Sapphire Substrates) technology is a method commonly used at present to improve the light-emitting efficiency of GaN-based LED devices, that is, a mask for dry etching is grown on a Sapphire substrate, a standard photolithography process is used to etch the mask to form a pattern, then the Sapphire is etched by using the etching technique, the mask is removed, and finally a GaN material is grown on the Sapphire substrate, so that the longitudinal epitaxy of the GaN material is changed into the lateral epitaxy. The method can effectively reduce the dislocation density of the GaN epitaxial material, thereby reducing the non-radiative recombination of the active region, reducing the reverse leakage current and prolonging the service life of the LED.
The above PSS etching generally adopts ICP plasma processing equipment, and the structural schematic diagram of the ICP plasma processing equipment is shown in fig. 1, and includes a reaction chamber 4, a chuck 6 and an inductive coupling coil 3, wherein the top of the reaction chamber 4 has a dielectric window 12, and the inductive coupling coil 3 is disposed above the dielectric window 12 and is electrically connected to the matcher 2 and the radio frequency source 1 in sequence; chuck 6 sets up in reaction chamber 4, and is connected with matcher 10 and radio frequency source 11 electricity in proper order to place tray 5 that is used for bearing a plurality of wafers on chuck 6, the arrangement of a plurality of wafers on tray 5 is as shown in fig. 2, and a plurality of wafers distribute into inside and outside two circles on tray 5's circumferencial direction, and have a wafer to be located tray 5's center, the following is abbreviated in proper order: inner ring wafers, outer ring wafers and center wafers.
The ICP plasma processing apparatus described above inevitably has the following problems in practical use:
since the plasma generated by the inductive coupling coil 3 is distributed more densely in the central region of the reaction chamber 4 and less densely in the edge region when it is diffused over the tray 5, the sheath of the plasma is formed thinner in the central region of the reaction chamber 4 and thicker in the edge region. The thinner the sheath layer is, the weaker the bombardment capability of ions for bombarding the wafer in the plasma is, and the weaker the bombardment modification capability of the pattern is, so that the height of the etched morphology is too high, and the ideal triangular morphology is difficult to form. Therefore, among the plurality of wafers on the tray 5, there is a variation in the etching results of the inner ring wafer, the outer ring wafer, and the center wafer, as shown in fig. 3: the left image is an electron microscope scanning image of the etching appearance of the outer ring wafer; the right image is the etched topography electron microscope scan of the center wafer. Wherein, the etching height of outer lane wafer is 1.58um, and the etching height of center wafer is 1.69um, and from this it can be known that, the nearer to tray 5 center, the height of the etching appearance of wafer is higher, thereby the etching uniformity is relatively poor. Moreover, the etching profile of the center wafer often leaves corners or curved structures, making it difficult to form the desired triangular profile.
Disclosure of Invention
The invention aims to at least solve one of the technical problems in the prior art, and provides plasma processing equipment which can enable the etching results among the processed workpieces or at different positions of the processed workpieces on a base to tend to be uniform, so that the etching uniformity can be improved.
The invention provides a plasma processing device, which comprises a reaction chamber, a base used for bearing a workpiece to be processed and a radio frequency antenna device, wherein the radio frequency antenna device comprises an inductance coil, an electrode plate group and a radio frequency source, the inductance coil and the electrode plate group are mutually connected in parallel and are electrically connected with the radio frequency source, and the inductance coil and the electrode plate group are arranged at the top of the reaction chamber and respectively correspond to different positions of the base.
Preferably, the electrode plate group comprises an electrode plate, and the electrode plate corresponds to the central area of the base; the inductance coil is wound around the periphery of the electrode plate.
Preferably, the electrode plate group comprises an electrode plate and is a ring body; the inductance coil corresponds to the central area of the base; the electrode plate surrounds the periphery of the inductance coil.
Preferably, the electrode plate group comprises two electrode plates which are connected in parallel, wherein one electrode plate corresponds to the central area of the base; the inductance coil is wound around the periphery of the electrode plate; and the other electrode plate is a ring body and surrounds the periphery of the inductance coil.
Preferably, the electrode plate group comprises at least three electrode plates connected in parallel, wherein one electrode plate corresponds to the central region of the base; the other electrode plates are ring bodies which surround the periphery of the electrode plate and are concentric rings; the inductance coil is wound around the periphery of any one electrode plate; or the inductance coil corresponds to the central area of the base; the at least three electrode plates are all ring bodies surrounding the periphery of the inductance coil and are concentric rings.
Preferably, the radio frequency antenna device further includes a fixed capacitor set, and the fixed capacitor set is connected in series to a circuit where at least one of the electrode plates is located.
Preferably, the fixed capacitor bank is composed of one or more fixed capacitors connected in series with each other.
Preferably, the radio frequency antenna device further includes an adjustable capacitor, and the adjustable capacitor is connected in series to a circuit where at least one of the electrode plates is located.
Preferably, the inductance coil is a planar coil, and a plane of the planar coil is parallel to a radial direction of the reaction chamber.
Preferably, the inductance coil is a three-dimensional spiral coil, and the axial direction of the three-dimensional spiral coil is parallel to the axial direction of the reaction chamber.
Preferably, the plane of the electrode plate is parallel to the radial direction of the reaction chamber.
The invention has the following beneficial effects:
the invention provides a plasma processing device, wherein a radio frequency antenna device of the plasma processing device is provided with an inductance coil and an electrode plate group which are mutually connected in parallel, and the inductance coil and the electrode plate group are electrically connected with a radio frequency source and respectively correspond to different positions of a base. The electrode plate group can improve the electric field of the region corresponding to the electrode plate group on the base and reduce the magnetic field of the region, thereby reducing the plasma density of the region, increasing the sheath thickness of the plasma distributed in the region and improving the capability of ion bombardment on the processed workpiece. Therefore, on the basis of generating plasma by using the inductance coil, the plasma is generated by using the electrode plate group, so that the effect of adjusting the distribution density of the plasma corresponding to different positions of the base can be achieved, the etching results among the processed workpieces on the base or at different positions of the processed workpieces tend to be uniform, and the etching uniformity can be improved.
Drawings
FIG. 1 is a schematic structural view of an ICP plasma processing apparatus;
FIG. 2 is a schematic view of the arrangement of a plurality of wafers on a tray;
FIG. 3 is an electron microscope scanned image of the etching features of the center wafer and the outer ring wafer;
fig. 4A is a sectional view of a plasma processing apparatus according to a first embodiment of the present invention;
FIG. 4B is a top view of the RF coil and electrode plate of FIG. 4A;
FIG. 5A is a graph showing a comparison of electric field distributions in the radial direction of the susceptor in the plasma processing apparatus with and without the electrode plates;
FIG. 5B is a graph showing a comparison of the distribution of magnetic fields in the radial direction of the susceptor in the plasma processing apparatus with and without the electrode plates;
fig. 6 is a sectional view of a plasma processing apparatus according to a modified embodiment of the first embodiment of the present invention;
fig. 7A is a sectional view of a plasma processing apparatus according to a second embodiment of the present invention;
FIG. 7B is a top view of the RF coil and electrode plate of FIG. 7A;
fig. 8 is a sectional view of a plasma processing apparatus according to a third embodiment of the present invention;
fig. 9A is a sectional view of a plasma processing apparatus according to a fourth embodiment of the present invention; and
figure 9B is a top view of the rf coil and electrode plate of figure 9A.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the plasma processing apparatus provided by the present invention will be described in detail below with reference to the accompanying drawings.
The invention provides plasma processing equipment which comprises a reaction chamber, a base used for bearing a processed workpiece and a radio frequency antenna device used for exciting reaction gas in the reaction chamber to form plasma, wherein the radio frequency antenna device comprises an inductance coil, an electrode plate group and a radio frequency source, the inductance coil and the electrode plate group are connected in parallel and are electrically connected with the radio frequency source, when the radio frequency source is switched on, radio frequency power is loaded to the inductance coil and the electrode plate group simultaneously, the inductance coil generates plasma in an inductance coupling mode, and the electrode plate group generates plasma in a capacitance coupling mode.
And the inductance coil and the electrode plate group are arranged at the top of the reaction chamber and respectively correspond to different positions of the base. The electrode plate group can improve the electric field of the region corresponding to the electrode plate group on the base and reduce the magnetic field of the region, thereby reducing the plasma density of the region, increasing the sheath thickness of the plasma distributed in the region and improving the capability of ion bombardment on the processed workpiece.
In practical application, the positions of the inductance coil and the electrode plate group relative to the base can be designed according to the deviation of the etching results between the processed workpieces on the base or different positions of the processed workpieces, for example, for a plurality of processed workpieces arranged on the base, if the etching height of the processed workpiece in the central area of the base is higher than the etching height of the processed workpiece in the edge area of the base, the electrode plate group can be arranged at the position corresponding to the central area of the base, so that the etching results of the processed workpiece in the central area of the base and the etching results of the processed workpiece in the edge area tend to be uniform, and the etching uniformity can be improved. On the contrary, if the etching height of the workpiece to be processed in the central area of the base is lower than that in the edge area of the base, the electrode plate group can be arranged at the position corresponding to the edge area of the base. Here, the etching height of the workpiece to be processed means the height of the substrate pattern obtained after the etching process is completed. The central region and the edge region of the base are two regions divided on the upper surface of the base for bearing a plurality of workpieces to be processed, wherein the central region is a region positioned in the center of the base, and the edge region is an annular region surrounding the periphery of the central region. The dividing mode is suitable for the condition that a plurality of workpieces to be processed are distributed into at least one circle in the circumferential direction of the base, so that the etching result among the workpieces to be processed tends to be uniform. However, in practical application, according to different arrangement modes of the workpieces to be processed, the upper surface of the base for bearing the workpieces to be processed can be divided into a plurality of areas in other modes, and the positions of the inductance coils and the electrode plate groups relative to the base are adaptively designed. In addition, for the condition that the base only bears a single workpiece to be processed, the positions of the inductance coil and the electrode plate group relative to the base can be adaptively designed according to the deviation of the etching results of different positions of the workpiece to be processed.
The following describes in detail specific embodiments of the structure and arrangement of the inductor coil and the electrode plate group used in the plasma processing apparatus according to the present invention.
Fig. 4A is a sectional view of a plasma processing apparatus according to a first embodiment of the present invention. Fig. 4B is a top view of the rf coil and electrode plate of fig. 4A. Referring to fig. 4A and 4B together, in the present embodiment, the plasma processing apparatus includes a reaction chamber 100, a chuck 26, a susceptor 25, and an rf antenna device 20. Wherein a chuck 26 is disposed in the reaction chamber 100 and electrically connected to a first rf source (including a matcher 27 and an rf source 28), and a susceptor 25 for carrying a plurality of workpieces to be processed is placed on the chuck 26. The rf antenna device 20 includes an inductive coil 21, an electrode plate group and a second rf source (including a matching unit 23 and an rf power supply 24), wherein the electrode plate group includes an electrode plate 22, and the electrode plate 22 corresponds to a central region of a base 25; the inductor coil 21 surrounds the outer periphery of the electrode plate 22 corresponding to the edge area of the base 25, as shown in fig. 4B. The inductor 21 and the electrode plate 22 are connected in parallel with each other and then electrically connected to a second radio frequency source. When the rf power source 24 is turned on, it simultaneously applies rf power to the inductive coil 21 and the electrode plate 22, and the inductive coil 21 and the electrode plate 22 jointly excite the reaction gas in the reaction chamber 100 to form plasma.
Next, the electromagnetic field distributions of the reaction chamber with the electrode plate 22 and the reaction chamber without the electrode plate 22 in the radial direction of the susceptor 25 are compared, as shown in fig. 5A and 5B, curve a is the electric field intensity distribution of the reaction chamber with the inductor coil 21 and the electrode plate 22 in the radial direction of the susceptor 25; curve B is the electric field intensity distribution in the radial direction of the susceptor 25 of the reaction chamber having only the induction coil 21; curve C is the magnetic field strength distribution of the reaction chamber with the inductor 21 and the electrode plate 22 in the radial direction of the susceptor 25; curve D is the magnetic intensity distribution of the reaction chamber with the inductor coil 21 only in the radial direction of the susceptor 25. As can be seen from the figure, for the reaction chamber with the inductance coil 21 and the electrode plate 22, the electric field intensity corresponding to the central region of the susceptor 25 is significantly increased relative to the reaction chamber with only the inductance coil 21, and the magnetic field intensity corresponding to the central region of the susceptor 25 is significantly decreased relative to the reaction chamber with only the inductance coil 21, so that the plasma density in the region can be decreased, the sheath thickness of the plasma distributed in the central region can be increased, and the ability of ions to bombard the processed workpiece can be improved. Therefore, in the case that the etching height of the workpiece to be processed in the central area of the base is higher than that in the edge area of the base, by making the electrode plate 22 correspond to the central area of the base 25 and making the inductance coil 21 surround the periphery of the electrode plate 22, the etching result of the workpiece to be processed in the central area of the base and the etching result of the workpiece to be processed in the edge area can be made to be uniform, and thus the etching uniformity can be improved.
Preferably, the induction coil 21 is a planar coil, and the plane of the planar coil is parallel to the radial direction of the reaction chamber 100, that is, parallel to the upper surface of the base 25 for bearing the workpiece to be processed, so as to ensure the stability and uniformity of the discharge. Similarly, the plane of the electrode plate 22 is parallel to the radial direction of the reaction chamber 100. In addition, the plane of the planar coil and the plane of the electrode plate 22 may be located on the same plane, or may be located on different planes according to specific situations.
Fig. 6 is a sectional view of a plasma processing apparatus according to a modified embodiment of the first embodiment of the present invention. Referring to fig. 6, the difference between the present modified embodiment and the first embodiment is only that: the rf antenna device 20 further includes a fixed capacitor set, which is a fixed capacitor 29 and is connected in series to the circuit of the electrode plate 22, that is, the fixed capacitor 29 is connected in series with the electrode plate 22 and then connected in parallel with the inductor 21. By adding the fixed capacitor 29, it is possible to adjust the rf potential on the electrode plate 22, so as to increase the adjustment window of the electric field generated by the electrode plate 22. Of course, in practical applications, the number of the fixed capacitors can be set to be more than two according to the specific radio frequency potential required on the electrode plate 22, and the fixed capacitors are connected in series.
Fig. 7A is a sectional view of a plasma processing apparatus according to a second embodiment of the present invention. Fig. 7B is a top view of the rf coil and electrode plate of fig. 7A. Referring to fig. 7A and 7B, the reaction chamber 100' of the present embodiment is different from the reaction chamber 100 of the first embodiment only in that: the inductor coil 21' corresponds to the central region of the base 25; the electrode plate 22 'is a ring and surrounds the inductor 21', as shown in fig. 7B. In this way, the electrode plate 22' can be used to increase the sheath thickness of the plasma distributed in the edge region of the susceptor 25 and to improve the ability of ions to bombard the workpiece being processed. Therefore, in the case that the etching height of the workpiece to be processed in the edge region of the base 25 is higher than that in the center region of the base, by making the electrode plate 22 'correspond to the edge region of the base 25 and the inductance coil 21' correspond to the center region of the base 25, the etching result of the workpiece to be processed in the edge region of the base 25 and the etching result of the workpiece to be processed in the center region can be made uniform, so that the etching uniformity can be improved. Similarly, a capacitor can be connected in series with the circuit of electrode plate 22 'to adjust the rf potential at electrode plate 22'.
Fig. 8 is a sectional view of a plasma processing apparatus according to a third embodiment of the present invention. Referring to fig. 8, the reaction chamber 200 adopted in the present embodiment is similar to the modified embodiment of the first embodiment, and only the structure of the inductor coil is different. Specifically, in the third embodiment, the rf antenna device 30 includes an inductive coil 31, an electrode plate group and a second rf source (including the matching unit 23 and the rf power supply 24), wherein the electrode plate group includes an electrode plate 32, and the electrode plate 32 corresponds to the central region of the susceptor 25; the inductance coil 31 is a three-dimensional spiral coil, and preferably, the axial direction of the three-dimensional spiral coil is parallel to the axial direction of the reaction chamber 200, that is, the bottom surface of the three-dimensional spiral coil can be parallel to the upper surface of the base 25 carrying the workpiece to be processed, so as to ensure the stability and uniformity of the discharge. The solid helical coil is wound around the outer periphery of the electrode plate 22 corresponding to the edge region of the base 25. The inductor 31 and the electrode plate 32 are connected in parallel with each other and then electrically connected to a second rf source. Of course, in practical applications, for example, a conical solid spiral coil or other heterogeneous coils may be used to obtain different plasma density distributions.
Preferably, a fixed capacitor 33 can be connected in series with the circuit on which the electrode plate 32 is located, so as to adjust the rf potential on the electrode plate 32. Alternatively, similar to the first embodiment, the number of the fixed capacitors 33 may be set to be more than two according to the specific radio frequency potential on the electrode plate 32, and the fixed capacitors 33 are connected in series.
Fig. 9A is a sectional view of a plasma processing apparatus according to a fourth embodiment of the present invention. Figure 9B is a top view of the rf coil and electrode plate of figure 9A. Referring to fig. 9A and 9B, the reaction chamber 300 of the present embodiment differs from the third embodiment only in that: the number of electrode plates is different. Specifically, in the fourth embodiment, the rf antenna device 40 includes an inductance coil 41, an electrode plate group including two electrode plates (42, 43) connected in parallel with each other, wherein the electrode plate 42 corresponds to the central region of the susceptor 25, and a second rf source (including the matcher 23 and the rf power supply 24); the inductance coil 41 surrounds the periphery of the electrode plate 42; the electrode plate 43 is a ring and surrounds the periphery of the inductance coil 41, i.e., the electrode plate 42 corresponds to the central region of the base 25; the electrode plate 43 corresponds to an edge region of the susceptor 25; the inductor 41 is located between the two electrode plates (42, 43), and corresponds to the middle region of the base 25, as shown in fig. 9B. The two electrode plates (42, 43) and the inductance coil 41 are connected in parallel with each other and then electrically connected to a second radio frequency source. Thus, the two electrode plates (42, 43) can be used to increase the sheath thickness of the plasma distributed in the center and edge regions of the susceptor (25), respectively, and to improve the ability of ions to bombard the workpiece being processed.
Preferably, one or more fixed capacitors 44 connected in series with each other may be connected in series only in the circuit where the electrode plate 42 is located, as shown in fig. 9A, or one or more fixed capacitors connected in series only in the circuit where the electrode plate 43 is located, or one or more capacitors connected in series in the circuit where two electrode plates (42, 43) are located. In summary, the fixed capacitor banks may be connected in series to the circuit on which at least one electrode plate is located, and each fixed capacitor bank may be composed of one or more fixed capacitors connected in series with each other.
In practical applications, the electrode plate group may further include at least three electrode plates connected in parallel, in which case, the arrangement manner of the electrode plate group and the inductance coil and the arrangement manner of each electrode plate in the electrode plate group may be: one of the electrode plates corresponds to the central area of the base; the other electrode plates are ring bodies which surround the periphery of the electrode plate and are concentric rings; the inductance coil is wound around the periphery of any one of the electrode plates, that is, the inductance coil may be wound around between any two adjacent electrode plates or around the outermost electrode plate. Alternatively, the inductance coil may be made to correspond to the central region of the base; at least three electrode plates are all ring bodies surrounding the periphery of the inductance coil and are concentric rings. It is easy to understand that the distribution density of the plasma corresponding to different positions of the base can be more finely adjusted by arranging the plurality of electrode plates corresponding to different positions of the base, so that the etching result among the processed workpieces on the base tends to be uniform.
It should be noted that, in the fourth embodiment, the electrode plate group is composed of two electrode plates, but the present invention is not limited to this, and in practical applications, the electrode plate group may also be composed of three, four or more than five electrode plates, and the electrode plates are connected in parallel with each other and correspond to different positions in the radial direction of the base 25.
It should be noted that, in the above embodiments, the capacitor is a fixed capacitor, and the number of the capacitors is one, but the present invention is not limited to this, and in practical applications, a plurality of fixed capacitors connected in series may be provided according to specific needs to adjust the radio frequency potential on the electrode plate to a desired value. Or, an adjustable capacitor can be used to replace a fixed capacitor, so that the radio-frequency potential on the electrode plate can be adjusted more conveniently.
In summary, the plasma processing apparatus provided in the above embodiments of the present invention generates plasma by using the electrode plate group on the basis of generating plasma by using the inductance coil, and can play a role in adjusting the distribution density of the plasma at different positions corresponding to the base, so that the etching result among the processed workpieces on the base tends to be uniform, thereby improving the etching uniformity.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (8)
1. A plasma processing apparatus comprising a reaction chamber, a pedestal for carrying a workpiece to be processed, and a radio frequency antenna arrangement, wherein the radio frequency antenna arrangement comprises an inductor coil, an electrode plate set and a radio frequency source,
the induction coil and the electrode plate group are mutually connected in parallel and are electrically connected with the radio frequency source, and the induction coil and the electrode plate group are arranged at the top of the reaction chamber and respectively correspond to different positions of the base;
the electrode plate group comprises at least two electrode plates which are mutually connected in parallel,
one of the electrode plates corresponds to a central region of the base; the other electrode plates are all ring bodies surrounding the periphery of the electrode plate; the inductance coil is wound around the periphery of any one electrode plate; or,
the inductance coil corresponds to the central area of the base; the at least two electrode plates are all ring bodies surrounding the periphery of the inductance coil.
2. The plasma processing apparatus of claim 1, wherein the electrode plate group includes at least three electrode plates connected in parallel with each other,
one of the electrode plates corresponds to a central region of the base; the other electrode plates are ring bodies which surround the periphery of the electrode plate and are concentric rings; the inductance coil is wound around the periphery of any one electrode plate; or,
the inductance coil corresponds to the central area of the base; the at least three electrode plates are all ring bodies surrounding the periphery of the inductance coil and are concentric rings.
3. The plasma processing apparatus as recited in any of claims 1-2 wherein said rf antenna arrangement further comprises a fixed capacitor bank, said fixed capacitor bank being connected in series to a circuit on which at least one of said electrode plates is located.
4. The plasma processing apparatus of claim 3 wherein said fixed capacitor bank is comprised of one or more fixed capacitors connected in series with each other.
5. The plasma processing apparatus as claimed in any of claims 1-2, wherein the rf antenna arrangement further comprises an adjustable capacitor connected in series with the circuit on which at least one of the electrode plates is located.
6. The plasma processing apparatus as claimed in any of claims 1-2, wherein the inductive coil is a planar coil, and a plane of the planar coil is parallel to a radial direction of the reaction chamber.
7. The plasma processing apparatus as claimed in any of claims 1 to 2, wherein the inductor coil is a solid helical coil, and an axial direction of the solid helical coil and an axial direction of the reaction chamber are parallel to each other.
8. The plasma processing apparatus as claimed in any of claims 1 to 2, wherein the plane of the electrode plate is parallel to a radial direction of the reaction chamber.
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| CN110828274B (en) * | 2018-08-10 | 2022-06-17 | 北京北方华创微电子装备有限公司 | Lower electrode device and reaction chamber |
| CN110459456B (en) * | 2019-08-16 | 2022-05-27 | 北京北方华创微电子装备有限公司 | Upper electrode structure, etching chamber and semiconductor processing equipment |
| CN110491759A (en) * | 2019-08-21 | 2019-11-22 | 江苏鲁汶仪器有限公司 | A kind of plasma etching system |
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| KR20110094910A (en) * | 2010-02-18 | 2011-08-24 | 피에스케이 주식회사 | Plasma generating unit and substrate treating apparatus with the same |
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