CN110828274B - Lower electrode device and reaction chamber - Google Patents
Lower electrode device and reaction chamber Download PDFInfo
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- CN110828274B CN110828274B CN201810909820.0A CN201810909820A CN110828274B CN 110828274 B CN110828274 B CN 110828274B CN 201810909820 A CN201810909820 A CN 201810909820A CN 110828274 B CN110828274 B CN 110828274B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Abstract
The invention provides a lower electrode device and a reaction chamber, which comprise an electrode plate, wherein the electrode plate comprises a plurality of sub-electrode plates, and different bias power is loaded to the plurality of sub-electrode plates so as to adjust the etching uniformity of a plurality of areas of a substrate corresponding to the plurality of sub-electrode plates. The lower electrode device provided by the invention can meet the requirement of etching uniformity and can be suitable for different process requirements.
Description
Technical Field
The invention relates to the field of microelectronic manufacturing, in particular to a lower electrode device and a reaction chamber.
Background
At present, in the field of microelectronic manufacturing, because of the excellent directionality and selectivity of the plasma process, the plasma process becomes a different choice for manufacturing microelectronic devices and is widely applied, the plasma process bombards the surface of a substrate so as to etch the surface of the substrate, and after the plasma etching process is carried out, the uniformity of the etching amount of the surface of the substrate is a key index for inspecting the quality of the plasma etching process.
As shown in fig. 1, a conventional plasma chamber includes a reaction chamber 11, a coil 12, a plasma 13 and a lower electrode plate 14, when an etching process is performed, a process gas is introduced into the reaction chamber 11, the coil 12 is loaded with a radio frequency power supply to excite the process gas into the plasma 13, and the lower electrode plate 14 is loaded with the radio frequency power supply to make the plasma 13 bombard a substrate 15 placed on the lower electrode plate 14, so as to perform the etching process on the substrate 15, because an edge effect occurs during the process, etching uniformity of the substrate 15 is affected, and generally, by adjusting a power ratio of the radio frequency power supplies loaded on the coil 12 and the lower electrode 14, the etching uniformity meets requirements.
However, in order to meet the requirement of etching uniformity, the power ratio of the rf power source loaded on the coil 12 and the lower electrode 14 can only be kept within a specific interval range, which brings a great limitation to the application of the etching process.
Disclosure of Invention
The invention aims to at least solve one of the technical problems in the prior art, and provides a lower electrode device and a reaction chamber, which can meet the requirement of etching uniformity and meet different process requirements.
The lower electrode device comprises an electrode plate, wherein the electrode plate comprises a plurality of sub-plates, and different bias power is loaded to the plurality of sub-plates so as to adjust the etching uniformity of a plurality of areas of a substrate corresponding to the plurality of sub-plates.
Preferably, the electrode plate includes a central sub-plate and at least one edge sub-plate surrounding the periphery of the central sub-plate.
Preferably, the central sub-polar plate is disc-shaped, and the edge sub-polar plate is ring-shaped;
the plurality of edge sub-plates have different inner diameters and are concentric with the central sub-plate.
Preferably, any two adjacent sub-pole plates are arranged at intervals, and a blocking assembly is arranged between any two adjacent sub-pole plates and used for preventing radio frequency signals from interfering with each other.
Preferably, the barrier assembly comprises a first barrier, two second barriers and a third barrier, wherein,
the first barrier is made of a conductive material and is grounded;
the two second blocking parts are made of dielectric materials, are oppositely arranged on two sides of the first blocking part and are respectively attached to any two adjacent sub-pole plates;
the third barrier is disposed on the first barrier and covers the entire upper surface of the first barrier.
Preferably, the third blocking piece and the two second blocking pieces are connected into a whole to form the cover body.
Preferably, the lower electrode device further comprises a cooling plate, the cooling plate comprises a plurality of sub-cooling plates, and the plurality of sub-cooling plates are arranged at the bottoms of the plurality of sub-pole plates in a one-to-one correspondence manner;
the blocking assembly is arranged between the sub cooling plates at the bottoms of any two adjacent sub polar plates.
Preferably, each sub-polar plate is independently connected with a radio frequency power supply.
Preferably, the radius of the central sub-plate is two thirds of the radius of the electrode plate.
A reaction chamber comprises an upper electrode device and a lower electrode device, wherein the lower electrode device comprises the lower electrode device.
The invention has the following beneficial effects:
the lower electrode device comprises an electrode plate, wherein the electrode plate comprises a plurality of sub-electrode plates, and different bias power is loaded to the plurality of sub-electrode plates to adjust the etching uniformity of a plurality of areas of a substrate corresponding to the plurality of sub-electrode plates so as to meet the requirement of the etching uniformity. In addition, the bias power loaded on the plurality of sub-plates can be adjusted according to different process requirements, so that the uniformity window can be increased.
According to the reaction chamber provided by the invention, by adopting the lower electrode device provided by the invention, the etching uniformity requirement can be met, and meanwhile, the reaction chamber can be suitable for different process requirements.
Drawings
FIG. 1 is a prior art plasma chamber;
FIG. 2 is a schematic structural diagram of a lower electrode assembly according to the present invention;
FIG. 3 is a schematic top view of a lower electrode assembly according to the present invention;
FIG. 4 is a schematic view of a barrier assembly of the present invention;
FIG. 5 is a schematic structural view of a reaction chamber provided in the present invention;
FIG. 6 is a graph illustrating etch rates at various measurement points on a substrate obtained using a prior art reaction chamber process;
FIG. 7 is a graph illustrating etch rates at various measurement points on a substrate processed using the reaction chamber of the present application.
Description of reference numerals:
11-a reaction chamber; 12-a coil; 13-plasma; 14-a lower electrode; 15-a substrate; 21-a substrate; 221-a central sub-plate; 222-an edge sub-plate; 231-a central radio frequency power supply; 232-edge radio frequency power supply; 241-a first barrier; 242-a second barrier; 243-a third barrier; 25-daughter cooling plates; 26-upper electrode assembly.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the lower electrode device and the reaction chamber provided by the present invention are described in detail below with reference to the accompanying drawings.
As shown in fig. 2 to 5, the present embodiment provides a bottom electrode device, which includes an electrode plate including a plurality of sub-plates, and adjusts etching uniformity of a plurality of regions of a substrate 21 corresponding to the plurality of sub-plates by applying different bias powers to the plurality of sub-plates. Furthermore, by dividing the electrode plate into a plurality of sub-electrode plates, the bias power loaded on the electrode plate can be controlled in a partitioned manner, so that at least two sub-electrode plates can be loaded with different bias powers according to the actual distribution condition of the etching rate on the surface of the substrate 21 to compensate the difference of the etching rates between the corresponding sub-electrode plates, so that the etching rates of different regions of the whole substrate 21 tend to be consistent to meet the requirement of etching uniformity. In addition, the bias power loaded on the plurality of sub-plates can be adjusted according to different process requirements, so that the uniformity window can be increased.
As the process proceeds, there is a "fringe effect" in the electric field formed over the substrate 21, namely: for the central region of the substrate 21, the electric field is directed downward perpendicular to the surface of the substrate 21, and ions in the corresponding region may bombard perpendicularly to the surface of the substrate 21. However, in the edge region of the substrate 21, the electric field will be distorted by the presence of the tip, and will be oriented no longer perpendicular to the surface of the substrate 21, but at an angle of less than 90 degrees, which will result in a tilt in the ion bombardment direction, creating the so-called "tilt" phenomenon. In the field of semiconductor etching, the occurrence of this phenomenon greatly affects the etching uniformity.
The etching uniformity of the reaction chamber in the prior art is compared with the etching uniformity of the reaction chamber in the present application, specifically, when the reaction chamber in the prior art is used for a process, the bias power applied to the bottom electrode is 450W, and the process gas flow is 10 sccm. In the reaction chamber of the present application, taking two sub-plates as an example, each of the two sub-plates includes a central sub-plate 221 and an edge sub-plate 222 surrounding the central sub-plate 221, when the reaction chamber of the present application is used for performing a process, a bias power applied to the central sub-plate 221 is 400W, a bias power applied to the edge sub-plate 222 is 600W, and a process gas flow rate is 10 sccm.
Fig. 6 is a schematic view of the etching rate of each measurement point on the substrate 21 obtained by performing a process using a reaction chamber of the related art. Fig. 7 is a schematic view of the etching rate of each measurement point on the substrate 21 obtained by the process using the reaction chamber of the present application. In fig. 6 and 7, the abscissa is the number of measurement points in the direction from the center of the substrate 21 toward the edge of the substrate 21; the ordinate is the magnitude of the etching rate.
As can be seen from comparison between fig. 6 and fig. 7, the etching rate of each measurement point on the substrate 21 obtained by the process using the reaction chamber of the present application is more average than that of each measurement point on the substrate 21 obtained by the process using the reaction chamber of the prior art, and the etching rate is more consistent across the whole wafer, and through calculation, the first sigma (1 σ) of the etching uniformity index of the substrate 21 obtained by the process using the reaction chamber of the present application is reduced from 12.43% to 4.14%, and the second sigma (2 σ) is reduced from 19.55% to 5.49%, that is, the etching uniformity is improved.
In practical applications, the sub-plate may be made of metal, dielectric material (such as ceramic, etc.), or metal material with a dielectric film grown on the surface (such as anodized aluminum grown on the surface of aluminum material), etc.
Generally, the electrode plate includes a center sub-plate 221 and at least one edge sub-plate 222 surrounding the outer circumference of the center sub-plate 221.
In this embodiment, the number of the sub-plates is two, and the two sub-plates are respectively a central sub-plate 221 and an edge sub-plate 222 surrounding the central sub-plate 221, wherein when the substrate 21 is placed on the electrode plate, the central sub-plate 221 corresponds to a central region of the substrate 21, and the edge sub-plate 222 corresponds to an edge region of the substrate 21, specifically, the central sub-plate 221 is circular, and optionally, the central sub-plate 221 is concentric with the substrate 21, so as to improve etching uniformity. The edge sub-plate 222 is annular and surrounds the center sub-plate 221, and optionally, the edge sub-plate 222 is concentric with the center sub-plate 221 to improve etching uniformity.
By applying different bias powers to the center sub-plate 221 and the edge sub-plate 222, the difference in etching rate between the center region and the edge region of the substrate 21 can be compensated, so that the etching rate of the center region and the etching rate of the edge region of the substrate 21 can be made to be uniform.
It should be noted that the magnitude of the bias power respectively applied to the center sub-plate 221 and the edge sub-plate 222 has the following influence on the etching rate of the surface of the substrate 21: the greater the bias power applied to the central sub-plate 221, the greater the etching rate of the central region of the substrate 21 corresponding to the central sub-plate 221; conversely, the smaller the bias power applied to the central sub-plate 221, the smaller the etching rate of the central region of the substrate 21 corresponding to the central sub-plate 221. The greater the bias power applied to the edge sub-plate 222, the greater the etching rate of the edge region of the substrate 21 corresponding to the edge sub-plate 222; conversely, the smaller the bias power applied to the edge sub-plate 222, the smaller the etching rate of the edge region of the substrate 21 corresponding to the edge sub-plate 222.
In this embodiment, each sub-plate is independently connected with a radio frequency power supply. Specifically, the bottom electrode device further comprises a central rf power source 231 and an edge rf power source 232, wherein the central rf power source 231 is electrically connected to the central sub-plate 221; an edge RF power supply 232 is electrically connected to the edge sub-plate 222, the center RF power supply 231 is used to apply bias power to the center sub-plate 221, and the edge RF power supply 232 is used to apply bias power to the edge sub-plate 222. The central rf power source 231 and the edge rf power source 232 are electrically connected to a matcher.
It should be noted that, in the present embodiment, there are two sub-plates, but the present invention is not limited to this, and in practical application, there may be more than three sub-plates, and one of the sub-plates is a central sub-plate 221, and the rest of the sub-plates are a plurality of edge sub-plates 222 surrounding the central sub-plate 221; the central sub-plate 221 is disc-shaped, the edge sub-plates 222 are ring-shaped, the inner diameters of the edge sub-plates 222 are different, and the edge sub-plates 222 are concentric with the central sub-plate 221 and are nested with each other. By arranging more sub-pole plates, the partition control of the bias power loaded on the pole plates can be further refined, so that the bias power loaded on the whole pole plates can be more finely adjusted, the method can be suitable for more processes, and can be more matched with different processes.
Optionally, when there are a plurality of edge sub-plates 222, the number of the edge rf power supplies 232 is the same as that of the edge sub-plates 222, and the edge rf power supplies 232 are electrically connected to the edge sub-plates 222 in a one-to-one correspondence manner, so that the bias power applied to each edge sub-plate 222 can be individually controlled. Alternatively, the number of edge RF power supplies 232 may be less than the number of edge sub-plates 222. Specifically, the plurality of edge sub-plates 222 may be divided into a plurality of groups, and the number of edge sub-plates 222 in any group may be one or more. The number of edge rf power supplies 232 is the same as the number of groups of edge sub-plates 222, so that the same edge rf power supply 232 can apply the same bias power to all edge sub-plates 222 in the same group; while different edge rf power supplies 232 may apply different bias powers to the edge sub-plates 222 in different groups.
In practical applications, the ratio of the surface areas of the central sub-plate 221 and the edge sub-plate 222 to the surface area of the electrode plate affects the ratio of the control area areas of the central sub-plate 221 and the edge sub-plate 222, that is, the larger the surface area ratio of the central sub-plate 221 or the edge sub-plate 222 is, the larger the control area ratio of the central sub-plate 221 or the edge sub-plate 222 is, so that the control capability of the central sub-plate 221 or the edge sub-plate 222 can be enhanced. The ratio of the surface area of the center sub-plate 221 to the surface area of the edge sub-plate 222 to the surface area of the electrode plate may be determined according to the specific reaction chamber size and the etching uniformity of the reaction chamber in different process requirements.
Specifically, in fig. 7, the total number of measurement points is 50. The central sub-polar plate 221 originally controls the etching rate of the measuring point with the abscissa of 1-30, and if the radius of the central sub-polar plate 221 is increased, namely the surface area is increased, the etching rate of the point with the abscissa of 1-35 can be controlled; the edge sub-plate 222 originally controls the etching rate of the point with the abscissa of 31 to 49, and after the radius of the central sub-plate 221 is increased, the surface area of the edge sub-plate 222 is correspondingly reduced, and the edge sub-plate 222 can control the etching rate of the measuring point with the abscissa of 36 to 49. Therefore, by changing the ratio of the surface area of the central sub-plate 221 and the edge sub-plate 222 to the surface area of the electrode plate, the action range of the central sub-plate 221 and the edge sub-plate 222 can be changed, and the purpose of adjusting the etching uniformity can be achieved.
Preferably, the radius of the central sub-plate 221 is two-thirds of the radius of the electrode plate. I.e., the surface area of the center sub-plate 221 occupies four-ninth of the surface area of the electrode plate, which ratio may preferably compensate for the difference in etch rate between the center region and the edge region of the substrate 21.
In this embodiment, any two adjacent sub-pole plates are arranged at intervals, and a blocking assembly is arranged between any two adjacent sub-pole plates, so as to prevent radio frequency signals from interfering with each other. By arranging the blocking assembly, the mutual interference of the radio frequency signals of the central sub-polar plate 221 and the edge sub-polar plates 222 and the mutual interference of the radio frequency signals between the edge sub-polar plates 222 can be prevented, so that the requirement of etching uniformity is met.
In this embodiment, the blocking assembly includes a first blocking member 241, two second blocking members 242, and a third blocking member 243, wherein the first blocking member 241 is made of a conductive material and is grounded; the two second blocking parts 242 are made of dielectric materials, are oppositely arranged on two sides of the first blocking part 241, and are respectively attached to any two adjacent sub-pole plates; the third blocking part 243 is disposed on the first blocking part 241 and covers the entire upper surface of the first blocking part 241, specifically, the first blocking part 241 is made of a metal material with good conductivity, such as copper, the two second blocking parts 242 and the third blocking part 243 are made of a dielectric material, such as ceramic, and the like, and the dielectric material is used to block the rf currents on the two adjacent sub-plates from flowing each other as much as possible, and even if the rf currents flow onto the second blocking part 242 and the third blocking part 243, by disposing the first blocking part 241, the rf currents on the second blocking part 242 and the third blocking part 243 can be led out to prevent the rf currents from flowing onto the adjacent sub-plates, so as to meet the requirement of etching uniformity.
In the present embodiment, corresponding to the structure of the central sub-plate 221 and the edge sub-plate 222, the first barrier 241, the two second barriers 242, and the third barrier 243 are all closed rings, and are all disposed around the annular gap between the central sub-plate 221 and the edge sub-plate 222. In practical application, the structures of the blocking members can be adaptively designed according to different structures of the sub-plates, as long as the radio-frequency currents of any two adjacent sub-plates can be blocked.
Optionally, the third blocking member 243 and the two second blocking members 242 are connected into a whole to form a cover body, the two second blocking members 242 are respectively connected with two sides of the third blocking member 243 to form an integrated closed ring body, the integrated closed ring body is sleeved on the first blocking member 241, the third blocking member 243 covers the whole upper surface of the first blocking member 241, and the second blocking member 242 covers two sides of the first blocking member 241 and is respectively in electrical contact with any two adjacent sub-pole plates.
In the present embodiment, the lower electrode device further comprises a cooling plate, the cooling plate comprises a plurality of sub-cooling plates 25, and the plurality of sub-cooling plates 25 are disposed at the bottom of the plurality of sub-plates in a one-to-one correspondence for cooling the sub-plates so as to avoid the temperature of the sub-plates and the substrate 21 thereon from being too high during the process. And, the blocking assembly is arranged between any two adjacent sub-pole plates and between the sub-cooling plates 25 at the bottoms of any two adjacent sub-pole plates, that is, the blocking assembly can also block the radio frequency current in two adjacent sub-cooling plates, so that the radio frequency signals can be prevented from interfering with each other through the sub-cooling plates 25.
In addition, the thickness of the blocking assembly is equal to the sum of the thickness of each sub-pole plate and the thickness of the sub-cooling plate 25 at the bottom of the sub-pole plate, that is, the upper surface of the blocking assembly is flush with the upper surface of the sub-pole plate, and the lower surface of the blocking assembly is flush with the lower surface of the sub-cooling plate 25, so that two adjacent sub-pole plates can be completely blocked from the sub-cooling plate 25.
As another technical solution, an embodiment of the present invention further provides a reaction chamber, which includes an upper electrode device 26 and a lower electrode device, where the lower electrode device provided by the embodiment of the present invention is adopted. Wherein, the upper electrode device 26 is used for exciting the process gas in the chamber to form plasma and bombarding the target material; the lower electrode means is used for attracting the plasma toward the substrate 21.
In this embodiment, the upper electrode assembly 26 is a coil that surrounds the outside of the sidewall of the chamber. Of course, in practical application, the coil may also be a stereo coil, a planar coil, or an antenna.
In this embodiment, a Faraday shield (Faraday shield) is used in the reaction chamber, however, the present invention is also applicable to a reaction chamber without a Faraday shield.
According to the reaction chamber provided by the invention, by adopting the lower electrode device provided by the invention, the etching uniformity requirement can be met, and meanwhile, the reaction chamber can be suitable for different process requirements.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (8)
1. The lower electrode device comprises an electrode plate, and is characterized in that the electrode plate comprises a plurality of sub-electrode plates, and different bias power is loaded on the plurality of sub-electrode plates to adjust the etching uniformity of a plurality of areas of a substrate corresponding to the plurality of sub-electrode plates;
any two adjacent sub-polar plates are arranged at intervals, and a blocking assembly is arranged between any two adjacent sub-polar plates and used for preventing radio frequency signals from interfering with each other;
the barrier assembly comprises a first barrier, two second barriers, and a third barrier, wherein,
the first blocking piece is made of a conductive material and is grounded;
the two second blocking parts are made of dielectric materials, are oppositely arranged on two sides of the first blocking part and are respectively attached to any two adjacent sub-pole plates;
the third barrier is disposed on the first barrier and covers the entire upper surface of the first barrier.
2. The bottom electrode assembly of claim 1, wherein the electrode plate includes a central sub-plate and at least one edge sub-plate surrounding a periphery of the central sub-plate.
3. The bottom electrode assembly of claim 2, wherein the center sub-plate is disk-shaped and the edge sub-plate is ring-shaped;
the plurality of edge sub-plates have different inner diameters and are concentric with the central sub-plate.
4. The bottom electrode assembly of claim 1, wherein the third barrier member and the second barrier members are integrally connected to form a housing.
5. The lower electrode device according to claim 4, further comprising a cooling plate, wherein the cooling plate comprises a plurality of sub-cooling plates, and the plurality of sub-cooling plates are arranged at the bottoms of the plurality of sub-pole plates in a one-to-one correspondence;
the blocking assembly is arranged between the sub cooling plates at the bottoms of any two adjacent sub polar plates.
6. The bottom electrode assembly of claim 1, wherein each of the sub-plates is independently coupled to a radio frequency power source.
7. The bottom electrode assembly of claim 3, wherein the radius of the center sub-plate is two-thirds of the radius of the electrode plate.
8. A reaction chamber comprising a bottom electrode assembly, wherein the bottom electrode assembly comprises the bottom electrode assembly of any one of claims 1-7.
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| CN107710378A (en) * | 2015-06-17 | 2018-02-16 | 应用材料公司 | Multi-electrode substrate support and phase control system |
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2018
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| JP2002009043A (en) * | 2000-06-23 | 2002-01-11 | Hitachi Ltd | Etching device and manufacturing method of semiconductor device using it |
| JP2002190466A (en) * | 2000-12-21 | 2002-07-05 | Semiconductor Leading Edge Technologies Inc | Plasma-etching device and method for manufacturing semiconductor device |
| JP2004022822A (en) * | 2002-06-17 | 2004-01-22 | Shibaura Mechatronics Corp | Plasma processing method and device |
| CN102548177A (en) * | 2012-01-13 | 2012-07-04 | 北京交通大学 | Discharge electrode structure of plasma air purification device |
| CN105632860A (en) * | 2014-10-31 | 2016-06-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma processing equipment |
| CN107710378A (en) * | 2015-06-17 | 2018-02-16 | 应用材料公司 | Multi-electrode substrate support and phase control system |
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