CN102610289A - Isotope battery with gallium-nitride-based multi-junction energy conversion unit - Google Patents
Isotope battery with gallium-nitride-based multi-junction energy conversion unit Download PDFInfo
- Publication number
- CN102610289A CN102610289A CN2012101107416A CN201210110741A CN102610289A CN 102610289 A CN102610289 A CN 102610289A CN 2012101107416 A CN2012101107416 A CN 2012101107416A CN 201210110741 A CN201210110741 A CN 201210110741A CN 102610289 A CN102610289 A CN 102610289A
- Authority
- CN
- China
- Prior art keywords
- gallium nitride
- nitride layer
- gallium
- layer
- radioactive source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The invention discloses an isotope battery with a gallium-nitride-based multi-junction energy conversion unit. The isotope battery comprises a gallium-nitride-based multi-junction energy conversion unit and auxiliary components. A positive electrode is formed on an upper P+-type layer or N+-type layer in the energy conversion unit, a step electrode is formed on a lower N+-type layer or P+-type layer, and the positive electrode and the step electrode are connected to a positive electrode pole and a negative electrode pole via a positive lead and a negative lead; a radioactive source sheet in the auxiliary components is arranged at the midpoint of the front surface of the energy conversion unit; all parts above are fixed at the midpoint of a base via insulating glue; each part arranged between the radioactive source sheet and the base is fixed via an inner packaging layer, and an outer packaging layer is covered on the periphery of the inner packaging layer; and the positive electrode pole and the negative electrode pole are vertical to the base and penetrate through the base, the inner packaging layer and the outer packaging layer. The isotope battery disclosed by the invention is small in shape, free from external energy supply during working, as well as capable of realizing 100 nA-1 muA short-circuit current and 0.8V-1.5V open-circuit voltage of output current, and keeping continuous current output for more than 6 years.
Description
Technical field
The invention belongs to the isotope battery field, be specifically related to a kind of gallium nitrate based many knot transducings unit isotope battery.
Background technology
According to the special nature of radiation volta effect and semiconductor junction device, can convert radioisotopic decay into electric energy, process radiation volta effect isotope battery.This battery not only has high, the advantages such as the life-span is long, non-maintaining, strong interference immunity of general isotope battery energy density; Can also accomplish very little volume and very light quality; Furthermore it mainly partly is a semiconductor devices; Easy and other semiconductor devices integrates, so spoke volt isotope battery becomes one of best power supply of microsystems such as MEMS, IC and Internet of Things node.In recent years, along with greatly developing of MEMS, IC and Internet of Things, spoke volt isotope battery is also receiving increasing concern.But from present result, the electric output performance of spoke volt isotope battery is still very low, and output current, voltage can not satisfy the requirement of micro-system to power supply, therefore is necessary to develop the higher spoke volt isotope battery of electric output performance.
The device that the transducing unit is used is the key of decision spoke volt isotope battery electricity output performance, and the transducing unit component that develops comparative maturity at present is the silica-based PN junction type of a monocrystalline device, but this device energy conversion efficiency is lower.The wide bandgap semiconductor materials device is acknowledged as and can improves spoke volt isotope battery conversion efficiency; Conversion efficiency can be brought up to 40% (M. V. S. Chandrashekhar from monocrystalline silicon the highest about 20% in theory; Deng the people, Applied physics letters, 2006; 88,033506).GaN is exactly one of up-and-coming wide bandgap semiconductor materials.But present GaN material electronics (hole) mobility is also very low, and its junction device is as spoke volt isotope battery transducing unit, and it is limited that its electrical property promotes degree, and especially actual output current is not high.
Summary of the invention
Low in order to overcome spoke volt isotope battery electricity output performance, the too little deficiency of short-circuit current and open-circuit voltage especially, the present invention provides a kind of gallium nitrate based transducings unit isotope batteries of tying more.Isotope battery of the present invention can significantly promote electric output performances such as short-circuit current and open-circuit voltage.
A kind of gallium nitrate based many knot transducings of the present invention unit isotope battery is characterized in that described isotope battery contains gallium nitrate based many knot transducing unit and accessory; Described transducing unit comprises sapphire substrates, cushion, N gallium nitride layer, N
+Gallium nitride layer, i gallium nitride layer, P
+Gallium nitride layer, P gallium nitride layer, SiO
2Protective seam, front electrode and step electrode; The Rankine-Hugoniot relations of each several part is SiO in gallium nitrate based many knot transducings unit
2Protective seam, P
+Gallium nitride layer, P gallium nitride layer, i gallium nitride layer, N gallium nitride layer, N
+Gallium nitride layer, cushion, sapphire substrates are arranged from top to bottom successively, at P
+Gallium nitride layer surface makes front electrode and not by SiO
2Protective seam covers, at N
+The annular surface that gallium nitride layer is exposed is made step electrode, constitutes P
+PiNN
+Gallium nitrate based many knot transducings unit of type; Described accessory comprises radioactive source sheet, outer package layer, interior encapsulated layer, just goes between, bears lead-in wire, positive electricity pole, negative electricity pole, insulating gel and base; The Rankine-Hugoniot relations of each several part is in the accessory, and the radioactive source sheet places SiO
2Centre on the protective seam is being provided with insulating gel under the sapphire substrates and between directly over the base, an end that is just going between is connected on the front electrode, and the other end is connected on the positive electricity pole; One end of negative lead-in wire is connected on the step electrode, and the other end is connected on the negative electricity pole; Described radioactive source sheet to the each several part of arranging between the base is all fixed through interior encapsulated layer, is coated with outer package layer in the periphery of interior encapsulated layer; Positive electricity pole, negative electricity pole be respectively perpendicular to base, and pass base, interior encapsulated layer and outer package layer.
The Rankine-Hugoniot relations of each several part replaces with SiO in described gallium nitrate based many knot transducings unit
2Protective seam, N
+Gallium nitride layer, N gallium nitride layer, i gallium nitride layer, P gallium nitride layer, P
+Gallium nitride layer, cushion, sapphire substrates are arranged from top to bottom successively, at N
+Gallium nitride layer surface makes front electrode and not by SiO
2Protective seam covers, at P
+The annular surface that gallium nitride layer is exposed is made step electrode, constitutes N
+NiPP
+Gallium nitrate based many knot transducings unit of type.
Described P
+The gallium nitride layer doping content is 1 * 10
17～1 * 10
18/ cm
3, P gallium nitride layer doping content is 1 * 10
16～1 * 10
17/ cm
3, the i gallium nitride layer is involuntary doped layer, N gallium nitride layer doping content is 1 * 10
17～1 * 10
18/ cm
3, N
+The gallium nitride layer doping content is 1 * 10
18～1 * 10
19/ cm
3
Described radioactive source sheet is selected from Ni-63 radioactive source sheet, H-3 radioactive source sheet.
Gallium nitrate based multijunction device transducing unit manufacturing process among the present invention is, is substrate with the sapphire, utilize the MOVCD method above that the growing gallium nitride material be made into multijunction device simultaneously.Grown buffer layer at first, thickness is 2～4 μ m; Grow doping concentration is 1 * 10 then
18～1 * 10
19/ cm
3N
+Gallium nitride layer, thickness are 0.2～0.8 μ m; Grow doping concentration is 1 * 10 on it
17～1 * 10
18/ cm
3The N gallium nitride layer, thickness is 0.2～0.8 μ m; The i gallium nitride layer of the involuntary doping of regrowth on it, thickness are 0.2～0.8 μ m; Regrowth doping content is 1 * 10 on it
16～1 * 10
17/ cm
3The P gallium nitride layer, thickness is 0.2～0.8 μ m; Regrowth doping content is 1 * 10 on it
17～1 * 10
18/ cm
3P
+Gallium nitride layer, thickness are 0.2～0.8 μ m.So far form P
+PiNN
+The multijunction structure of type.At P
+Gallium nitride layer surface deposition Ni/Au forms Ohmic contact and makes the front ring electrode, and makes the SiO that does not cover ring electrode
2Protective seam.Etching P
+Gallium nitride layer, P gallium nitride layer, i gallium nitride layer, N gallium nitride layer edge expose N
+The gallium nitride layer edge is at N
+Deposition Ni/Au forms Ohmic contact and makes the circular step electrode on the gallium nitride layer edge.So far be made into gallium nitrate based P
+PiNN
+The type multijunction device.
The another kind of manufacturing process of the gallium nitrate based multijunction device transducing unit among the present invention is, is substrate with the sapphire, utilize the MOVCD method above that the growing gallium nitride material be made into multijunction device simultaneously.Grown buffer layer at first, thickness is 2～4 μ m; Grow doping concentration is 1 * 10 then
17～1 * 10
18/ cm
3P
+Gallium nitride layer, thickness are 0.2～0.8 μ m; Grow doping concentration is 1 * 10 on it
16～1 * 10
17/ cm
3The P gallium nitride layer, thickness is 0.2～0.8 μ m; The i gallium nitride layer of the involuntary doping of regrowth on it, thickness are 0.2～0.8 μ m; Regrowth doping content is 1 * 10 on it
17～1 * 10
18/ cm
3The N gallium nitride layer, thickness is 0.2～0.8 μ m; Regrowth doping content is 1 * 10 on it
18～1 * 10
19/ cm
3N
+Gallium nitride layer, thickness are 0.2～0.8 μ m.So far form N
+NiPP
+The multijunction structure of type.At N
+Gallium nitride layer surface deposition Ni/Au forms Ohmic contact and makes the front ring electrode, and makes the SiO that does not cover ring electrode
2Protective seam.Etching N
+Gallium nitride layer, N gallium nitride layer, i gallium nitride layer, P gallium nitride layer edge expose P
+The gallium nitride layer edge is at P
+Deposition Ni/Au forms Ohmic contact and makes the circular step electrode on the gallium nitride layer edge.So far be made into gallium nitrate based N
+NiPP
+The type multijunction device.
The technical scheme that accessory is made is just to go between to connect front ring electrode and positive electricity pole, and negative lead-in wire connects step electrode and negative electricity pole.Utilize insulating gel that the sapphire of gallium nitrate based multijunction device simultaneously is bonded in the base centre, the radioactive source sheet places SiO
2Centre on the protective seam.The radioactive source sheet is selected from Ni-63 radioactive source sheet or H-3 radioactive source sheet.Interior encapsulated layer adopts radiation-resistant compound substance, waters through the die perfusion method to be filled in the space of (removing between radioactive source sheet and the transducing unit) between each parts, plays fixing and radiation proof effect.Outer package layer is made with the FeNi kovar alloy, plays to strengthen cell integrated intensity and radiation proof effect.The positive and negative electrode post is perpendicular to base and pass base and interior outer package layer.Whole isotope battery is the button shape that has two electrode columns from seeing in appearance.
The principles of science of institute of the present invention foundation is: the radioactive source ray incides in the transducing unit; The electronics of vitalizing semiconductor material lattice atom impels electronics from the valence to the conduction band, produces electron-hole pair and diffuses into the interface; Under the built in field effect in interface, realize separating of electronics and hole; And utilize the Ohmic contact of junction device two end electrodes that electronics is drawn, and when connecting external circuit, produce electric current, form isotope battery.In like manner, the present invention mentions a kind of gallium nitrate based many knot transducings unit isotope batteries and also is based on this principle, but owing to adopted multijunction device as the transducing unit, wherein P in the multijunction device
+P bed interface, Pi bed interface, iN bed interface, NN
+The bed interface can both form the interface with built in field respectively, has increased separating and collection efficiency of electronics and hole greatly than tradition single junction device, thereby can improve the short-circuit current and the open-circuit voltage of this battery output current.
The invention has the beneficial effects as follows: the battery build is small, does not need the external world that energy is provided during work, can realize short-circuit current 100nA～1 μ A, the open-circuit voltage 0.8V～1.5V of output current; Select for use H-3 radioactive source sheet can keep more than 6 years output current incessantly, select for use Ni-63 radioactive source sheet can keep more than 45 years output current incessantly.
Description of drawings
Fig. 1 is the structural representation of a kind of gallium nitrate based many knot transducings of the present invention unit isotope battery;
Among the figure, 1. encapsulated layer 5. step electrode 6. 7. insulating gels, 8. bases, 9. positive electricity pole 10.SiO that just going between in radioactive source sheet 2. front electrodes 3. outer package layers 4.
2Protective seam 11.P
+Gallium nitride layer 12.P gallium nitride layer 13.i gallium nitride layer 14.N gallium nitride layer 15.N
+ Gallium nitride layer 16. cushions 17. negative lead-in wire 18. sapphire substrates 19. negative electricity poles.
Embodiment
Below in conjunction with accompanying drawing content of the present invention is further specified.
Fig. 1 is the structural representation of a kind of gallium nitrate based many knot transducings of the present invention unit isotope battery.Among Fig. 1, gallium nitrate based many knot transducings of the present invention unit isotope battery contains gallium nitrate based many knot transducing unit and accessory; Described transducing unit comprises sapphire substrates 18, cushion 16, N gallium nitride layer 14, N
+ Gallium nitride layer 15, i gallium nitride layer 13, P
+ Gallium nitride layer 11, P gallium nitride layer 12, SiO
2 Protective seam 10, front electrode 2 and step electrode 5; The Rankine-Hugoniot relations of each several part is SiO in gallium nitrate based many knot transducings unit
2 Protective seam 10, P
+ Gallium nitride layer 11, P gallium nitride layer 12, i gallium nitride layer 13, N gallium nitride layer 14, N
+ Gallium nitride layer 15, cushion 16, sapphire substrates 18 are arranged from top to bottom successively, at P
+ Gallium nitride layer 11 surface makes front electrodes 2 and not by SiO
2 Protective seam 10 covers, at N
+ Gallium nitride layer 15 exposed annular surfaces are made step electrode 5, constitute P
+PiNN
+Gallium nitrate based many knot transducings unit of type; Described accessory comprises radioactive source sheet 1, outer package layer 3, interior encapsulated layer 4, just goes between 6, negative lead-in wire 17, positive electricity pole 9, negative electricity pole 19, insulating gel 7 and base 8; The Rankine-Hugoniot relations of each several part is in the accessory, and radioactive source sheet 1 places SiO
2Centre on the protective seam 10 is being provided with insulating gel 7 under the sapphire substrates 18 and between directly over the base 8, and 6 the end of just going between is connected on the front electrode 2, and the other end is connected on the positive electricity pole 9; One end of negative lead-in wire 17 is connected on the step electrode 5, and the other end is connected on the negative electricity pole 19; The each several part of arranging between described radioactive source sheet 1 to the base 8 is all fixed through interior encapsulated layer 4, is coated with outer package layer 3 in the periphery of interior encapsulated layer 4; Positive electricity pole 9, negative electricity pole 19 be respectively perpendicular to base 8, and pass base 8, interior encapsulated layer 4 and outer package layer 3.
In the present embodiment, described P
+ Gallium nitride layer 11 doping contents are 1 * 10
17/ cm
3, P gallium nitride layer 12 doping contents are 1 * 10
16/ cm
3, i gallium nitride layer 13 is involuntary doped layer, N gallium nitride layer 14 doping contents are 1 * 10
17/ cm
3, N
+ Gallium nitride layer 15 doping contents are 1 * 10
18/ cm
3
Described radioactive source sheet 1 is a Ni-63 radioactive source sheet.
Present embodiment is identical with basic structure and the Rankine-Hugoniot relations of embodiment 1, and difference is that the Rankine-Hugoniot relations of each several part is SiO in the gallium nitrate based many knot transducings unit in the present embodiment
2Protective seam, N
+Gallium nitride layer, N gallium nitride layer, i gallium nitride layer, P gallium nitride layer, P
+Gallium nitride layer, cushion, sapphire substrates are arranged from top to bottom successively, at N
+Gallium nitride layer surface makes front electrode and not by SiO
2Protective seam covers, at P
+The annular surface that gallium nitride layer is exposed is made step electrode, constitutes N
+NiPP
+Gallium nitrate based many knot transducings unit of type.P in the present embodiment
+The gallium nitride layer doping content is 1 * 10
18/ cm
3, P gallium nitride layer doping content is 1 * 10
17/ cm
3, the i gallium nitride layer is involuntary doped layer, N gallium nitride layer doping content is 1 * 10
18/ cm
3, N
+The gallium nitride layer doping content is 1 * 10
19/ cm
3
Present embodiment is identical with basic structure and the Rankine-Hugoniot relations of embodiment 1, and difference is that radioactive source sheet 1 is a H-3 radioactive source sheet in the present embodiment.
Present embodiment is identical with basic structure and the Rankine-Hugoniot relations of embodiment 2, and difference is that radioactive source sheet 1 is a H-3 radioactive source sheet in the present embodiment.
Consult accompanying drawing, in first embodiment, a kind of gallium nitrate based many knot transducings unit isotope battery is made up of gallium nitrate based many knot transducing unit and accessory.The structure of gallium nitrate based many knot transducings unit is SiO
2Protective seam 10, P
+Gallium nitride layer 11, P gallium nitride layer 12, i gallium nitride layer 13, N gallium nitride layer 14, N
+Gallium nitride layer 15, cushion 16, sapphire substrates 18 are arranged from top to bottom successively, at P
+Gallium nitride layer 11 surface makes front electrodes 2 and not by SiO
2Protective seam 10 covers, at N
+Gallium nitride layer 15 exposed annular surfaces are made step electrode 5, constitute gallium nitrate based P
+PiNN
+Many knot transducings unit.The structure of accessory places SiO for containing Ni-63 radioactive source sheet 1
2Centre on the protective seam 10; Insulating gel 7 is positioned under the sapphire substrates 18; Insulating gel 7 is positioned at centre on the base 8; 6 the end of just going between is connected on the front electrode 2, and the other end is connected on the positive electricity pole 9; One end of negative lead-in wire 17 is connected on the step electrode 5, and the other end is connected on the negative electricity pole 19; Base 8 comprises that base 8 is fixing by interior encapsulated layer 4 with top, its outer outer package layer 3 that coats again; Positive electricity pole 9, negative electricity pole 19 be perpendicular to base 8, and pass base 8, interior encapsulated layer 4 and outer package layer 3.
In second embodiment, a kind of gallium nitrate based many knot transducings unit isotope battery is made up of gallium nitrate based many knot transducing unit and miscellaneous part.Gallium nitrate based P
+PiNN
+The structure of many knot transducings unit is identical with first embodiment.The structure of accessory places SiO for containing H-3 radioactive source sheet 1
2Centre on the protective seam 10, other are identical with first embodiment.
In the 3rd embodiment, a kind of gallium nitrate based many knot transducings unit isotope battery is made up of gallium nitrate based many knot transducing unit and miscellaneous part.The structure of gallium nitrate based many knot transducings unit is SiO
2Protective seam 10, N
+ Gallium nitride layer 15, N gallium nitride layer 14, i gallium nitride layer 13, P gallium nitride layer 12, P
+ Gallium nitride layer 11, cushion 16, sapphire substrates 18 are arranged from top to bottom successively, at N
+ Gallium nitride layer 15 surface makes front electrodes 2 and not by SiO
2Protective seam 10 covers, at P
+ Gallium nitride layer 11 exposed annular surfaces are made step electrode 5, constitute gallium nitrate based N
+NiPP
+Many knot transducings unit.The structure of accessory is identical with first embodiment.
In the 4th embodiment, a kind of gallium nitrate based many knot transducings unit isotope battery is made up of gallium nitrate based many knot transducing unit and miscellaneous part.Gallium nitrate based N
+NiPP
+The structure of many knot transducings unit is identical with the 3rd embodiment.The structure of accessory places SiO for containing H-3 radioactive source sheet 1
2Centre on the protective seam 10, other are identical with first embodiment.
Claims (4)
1. gallium nitrate based many knot transducings unit isotope batteries, it is characterized in that: described isotope battery contains gallium nitrate based many knot transducing unit and accessory; Described transducing unit comprises sapphire substrates (18), cushion (16), N gallium nitride layer (14), N
+Gallium nitride layer (15), i gallium nitride layer (13), P
+Gallium nitride layer (11), P gallium nitride layer (12), SiO
2Protective seam (10), front electrode (2) and step electrode (5); The Rankine-Hugoniot relations of each several part is SiO in gallium nitrate based many knot transducings unit
2Protective seam (10), P
+Gallium nitride layer (11), P gallium nitride layer (12), i gallium nitride layer (13), N gallium nitride layer (14), N
+Gallium nitride layer (15), cushion (16), sapphire substrates (18) are arranged from top to bottom successively, at P
+Gallium nitride layer (11) surface makes front electrode (2) and not by SiO
2Protective seam (10) covers, at N
+The annular surface that gallium nitride layer (15) is exposed is made step electrode (5), constitutes P
+PiNN
+Gallium nitrate based many knot transducings unit of type; Described accessory comprises radioactive source sheet (1), outer package layer (3), interior encapsulated layer (4), just go between (6), negative lead-in wire (17), positive electricity pole (9), negative electricity pole (19), insulating gel (7) and base (8); The Rankine-Hugoniot relations of each several part is in the accessory, and radioactive source sheet (1) places SiO
2Centre on the protective seam (10) is being provided with insulating gel (7) under the sapphire substrates (18) and between directly over the base (8), an end of just go between (6) is connected on the front electrode (2), and the other end is connected on the positive electricity pole (9); One end of negative lead-in wire (17) is connected on the step electrode (5), and the other end is connected on the negative electricity pole (19); The each several part of arranging between described radioactive source sheet (1) to the base (8) is all fixing through interior encapsulated layer (4), is coated with outer package layer (3) in the periphery of interior encapsulated layer (4); Positive electricity pole (9), negative electricity pole (19) be respectively perpendicular to base (8), and pass base (8), interior encapsulated layer (4) and outer package layer (3).
2. isotope battery according to claim 1 is characterized in that: the Rankine-Hugoniot relations of each several part replaces with SiO in described gallium nitrate based many knot transducings unit
2Protective seam (10), N
+Gallium nitride layer (15), N gallium nitride layer (14), i gallium nitride layer (13), P gallium nitride layer (12), P
+Gallium nitride layer (11), cushion (16), sapphire substrates (18) are arranged from top to bottom successively, at N
+Gallium nitride layer (15) surface makes front electrode (2) and not by SiO
2Protective seam (10) covers, at P
+The annular surface that gallium nitride layer (11) is exposed is made step electrode (5), constitutes N
+NiPP
+Gallium nitrate based many knot transducings unit of type.
3. according to the said isotope battery of claim 1, it is characterized in that: described P
+Gallium nitride layer (11) doping content is 1 * 10
17～1 * 10
18/ cm
3, P gallium nitride layer (12) doping content is 1 * 10
16～1 * 10
17/ cm
3, i gallium nitride layer (13) is involuntary doped layer, N gallium nitride layer (14) doping content is 1 * 10
17～1 * 10
18/ cm
3, N
+Gallium nitride layer (15) doping content is 1 * 10
18～1 * 10
19/ cm
3
4. isotope battery according to claim 1 is characterized in that: described radioactive source sheet (1) adopts Ni-63 radioactive source sheet or H-3 radioactive source sheet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210110741.6A CN102610289B (en) | 2012-04-17 | 2012-04-17 | Isotope battery with gallium-nitride-based multi-junction energy conversion unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210110741.6A CN102610289B (en) | 2012-04-17 | 2012-04-17 | Isotope battery with gallium-nitride-based multi-junction energy conversion unit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102610289A true CN102610289A (en) | 2012-07-25 |
| CN102610289B CN102610289B (en) | 2015-03-04 |
Family
ID=46527601
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210110741.6A Expired - Fee Related CN102610289B (en) | 2012-04-17 | 2012-04-17 | Isotope battery with gallium-nitride-based multi-junction energy conversion unit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102610289B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104064242A (en) * | 2014-06-29 | 2014-09-24 | 西安电子科技大学 | Sandwiched parallel connection type epitaxy GaN PIN type beta irradiation battery and preparation method thereof |
| CN104464868A (en) * | 2014-12-22 | 2015-03-25 | 厦门大学 | GaN Schottky junction type nuclear battery and manufacturing method thereof |
| CN110491541A (en) * | 2018-10-29 | 2019-11-22 | 长安大学 | A kind of H-3 silicon carbide isotope battery and its manufacturing method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030145884A1 (en) * | 2001-10-12 | 2003-08-07 | King Richard Roland | Wide-bandgap, lattice-mismatched window layer for a solar conversion device |
| CN101101797A (en) * | 2007-07-20 | 2008-01-09 | 大连理工大学 | Isotope element battery production method and structure |
| US20080217622A1 (en) * | 2007-03-08 | 2008-09-11 | Amit Goyal | Novel, semiconductor-based, large-area, flexible, electronic devices |
| CN101527175A (en) * | 2009-04-10 | 2009-09-09 | 苏州纳米技术与纳米仿生研究所 | PIN type nuclear battery and preparation method thereof |
| CN101599308A (en) * | 2009-06-30 | 2009-12-09 | 西北工业大学 | Has minisize nuclear battery of protection ring structure and preparation method thereof |
-
2012
- 2012-04-17 CN CN201210110741.6A patent/CN102610289B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030145884A1 (en) * | 2001-10-12 | 2003-08-07 | King Richard Roland | Wide-bandgap, lattice-mismatched window layer for a solar conversion device |
| US20080217622A1 (en) * | 2007-03-08 | 2008-09-11 | Amit Goyal | Novel, semiconductor-based, large-area, flexible, electronic devices |
| CN101101797A (en) * | 2007-07-20 | 2008-01-09 | 大连理工大学 | Isotope element battery production method and structure |
| CN101527175A (en) * | 2009-04-10 | 2009-09-09 | 苏州纳米技术与纳米仿生研究所 | PIN type nuclear battery and preparation method thereof |
| CN101599308A (en) * | 2009-06-30 | 2009-12-09 | 西北工业大学 | Has minisize nuclear battery of protection ring structure and preparation method thereof |
Non-Patent Citations (2)
| Title |
|---|
| MIN LU ET AL.: "GaN SCHOTTKY BETAVOLTAIC NUCLEAR BATTERIES", 《ENERGY CONVERSION AND MANAGEMENT》 * |
| 郭鹏伟 等: "GaN放射性同位素微电池源的选取", 《南华大学学报（自然科学版）》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104064242A (en) * | 2014-06-29 | 2014-09-24 | 西安电子科技大学 | Sandwiched parallel connection type epitaxy GaN PIN type beta irradiation battery and preparation method thereof |
| CN104464868A (en) * | 2014-12-22 | 2015-03-25 | 厦门大学 | GaN Schottky junction type nuclear battery and manufacturing method thereof |
| CN104464868B (en) * | 2014-12-22 | 2017-01-25 | 厦门大学 | GaN Schottky junction type nuclear battery and manufacturing method thereof |
| CN110491541A (en) * | 2018-10-29 | 2019-11-22 | 长安大学 | A kind of H-3 silicon carbide isotope battery and its manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102610289B (en) | 2015-03-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101257588B1 (en) | High energy-density radioisotope micro power sources device | |
| CN101527175B (en) | PIN type nuclear battery and preparation method thereof | |
| CN104409127B (en) | Composite converting type isotope battery | |
| CN103296123B (en) | P-type carbon quantum dot/N-type silicon nanowire array heterojunction solar battery and preparation method thereof | |
| US9099212B2 (en) | Low volumetric density betavoltaic power device | |
| CN104392761A (en) | Radiological volt isotope battery and preparation method thereof | |
| CN103441155A (en) | Solar battery integrating bypass diode and preparation method of solar battery | |
| CN102610289B (en) | Isotope battery with gallium-nitride-based multi-junction energy conversion unit | |
| CN102446572B (en) | Tritium isotope microcell and preparation method thereof | |
| CN101694816B (en) | Heterojunction and photoelectrochemistry mixed solar cell | |
| CN102368503B (en) | CNT (carbon nano tube)-silicon heterojunction solar cell and manufacturing method thereof | |
| TW201108441A (en) | Manufacturing method for stacking type solar cells and its product thereof | |
| Zhang et al. | The diameter-dependent photoelectrochemical performance of silicon nanowires | |
| CN102790116A (en) | Inverted GaInP/GaAs/Ge/Ge four-junction solar cell and preparation method thereof | |
| CN108493327A (en) | Spiro-MeOTAD/ZnO piezoelectric type nano generators and preparation method thereof | |
| CN101527176A (en) | PN type nuclear battery and preparation method thereof | |
| CN104051046A (en) | Sandwich serial-type PIN-structure beta irradiation battery and manufacturing method thereof | |
| CN104465814B (en) | It is a kind of to combine nano structure of zinc oxide extra small suede solar cell and preparation method thereof | |
| US9018721B1 (en) | Beta voltaic semiconductor photodiode fabricated from a radioisotope | |
| CN102543465B (en) | CdS single crystal nanowire solar battery and preparation method of the same | |
| CN105448374B (en) | Using the carborundum PIN buried structures isotope battery and its manufacture method of αsource | |
| CN104464868B (en) | GaN Schottky junction type nuclear battery and manufacturing method thereof | |
| Hao et al. | Photoelectrochemical performance of a sub-micron structured film with poly (3-methylthiophene)(P3MT)-modified CdTe/ZnO shell-core sub-micron tube arrays | |
| CN205211765U (en) | Novel high -efficient solar cell | |
| CN102496399B (en) | Samarium isotope minisize cell and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150304 Termination date: 20190417 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |