CN102610289B - Isotope battery with gallium-nitride-based multi-junction energy conversion unit - Google Patents
Isotope battery with gallium-nitride-based multi-junction energy conversion unit Download PDFInfo
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- CN102610289B CN102610289B CN201210110741.6A CN201210110741A CN102610289B CN 102610289 B CN102610289 B CN 102610289B CN 201210110741 A CN201210110741 A CN 201210110741A CN 102610289 B CN102610289 B CN 102610289B
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Abstract
The invention discloses an isotope battery with a gallium-nitride-based multi-junction energy conversion unit. The isotope battery comprises a gallium-nitride-based multi-junction energy conversion unit and auxiliary components. A positive electrode is formed on an upper P+-type layer or N+-type layer in the energy conversion unit, a step electrode is formed on a lower N+-type layer or P+-type layer, and the positive electrode and the step electrode are connected to a positive electrode pole and a negative electrode pole via a positive lead and a negative lead; a radioactive source sheet in the auxiliary components is arranged at the midpoint of the front surface of the energy conversion unit; all parts above are fixed at the midpoint of a base via insulating glue; each part arranged between the radioactive source sheet and the base is fixed via an inner packaging layer, and an outer packaging layer is covered on the periphery of the inner packaging layer; and the positive electrode pole and the negative electrode pole are vertical to the base and penetrate through the base, the inner packaging layer and the outer packaging layer. The isotope battery disclosed by the invention is small in shape, free from external energy supply during working, as well as capable of realizing 100 nA-1 muA short-circuit current and 0.8V-1.5V open-circuit voltage of output current, and keeping continuous current output for more than 6 years.
Description
Technical field
The invention belongs to isotope battery field, be specifically related to a kind of isotope battery with gallium-nitride-basemulti-junction multi-junction energy conversion unit.
Background technology
According to the special nature of radiation volta effect and semiconductor junction device, radioisotopic decay can be converted to electric energy, make radiation volta effect isotope battery.The advantages such as this battery not only has that general isotope battery energy density is high, the life-span long, non-maintaining, strong interference immunity, very little volume and very light quality can also be accomplished, furthermore its major part is semiconductor devices, easy and other semiconductor devices integrates, therefore one of spoke volt isotope battery best power supply becoming the microsystem such as MEMS, IC and Internet of things node.In recent years, along with greatly developing of MEMS, IC and Internet of Things, spoke volt isotope battery is also receiving increasing concern.But from current result, the electric output performance of spoke volt isotope battery is still very low, and output current, voltage can not meet the requirement of micro-system to power supply, be therefore necessary to develop the higher spoke volt isotope battery of electric output performance.
The device of transducing unit is the key determining spoke volt isotope battery electricity output performance, and the transducing unit component of development comparative maturity is monocrystalline silica-based PN junction type device at present, but this device energy conversion efficiency is lower.Wide bandgap semiconductor materials device is acknowledged as and can improves spoke volt isotope battery conversion efficiency, conversion efficiency can bring up to 40%(M. V. S. Chandrashekhar from monocrystalline silicon the highest about 20% in theory, Deng people, Applied physics letters, 2006,88,033506).GaN is exactly one of up-and-coming wide bandgap semiconductor materials.But current GaN material electronics (hole) mobility is also very low, its junction device is as spoke volt isotope battery transducing unit, and its electrical property promotes limitation, and especially actual output current is not high.
Summary of the invention
Low in order to overcome spoke volt isotope battery electricity output performance, the deficiency that especially short-circuit current and open-circuit voltage are too little, the invention provides a kind of isotope battery with gallium-nitride-basemulti-junction multi-junction energy conversion unit.Isotope battery of the present invention significantly can promote the electric output performance such as short-circuit current and open-circuit voltage.
A kind of isotope battery with gallium-nitride-basemulti-junction multi-junction energy conversion unit of the present invention, is characterized in, described isotope battery contains gallium nitrate based many knot transducing unit and accessory; Described transducing unit comprises sapphire substrates, cushion, N gallium nitride layer, N
+gallium nitride layer, i gallium nitride layer, P
+gallium nitride layer, P gallium nitride layer, SiO
2protective seam, front electrode and step electrode; In gallium nitrate based many knot transducing unit, the Rankine-Hugoniot relations of each several part is, SiO
2protective seam, P
+gallium nitride layer, P gallium nitride layer, i gallium nitride layer, N gallium nitride layer, N
+gallium nitride layer, cushion, sapphire substrates are arranged from top to bottom successively, at P
+gallium nitride layer surface makes front electrode and not by SiO
2protective seam covers, at N
+the annular surface that gallium nitride layer is exposed makes step electrode, forms P
+piNN
+gallium nitrate based many knot transducing unit of type; Described accessory comprises radioactive source sheet, outer package layer, interior encapsulated layer, just goes between, bears lead-in wire, positive electricity pole, negative electricity pole, insulating gel and base; In accessory, the Rankine-Hugoniot relations of each several part is, radioactive source sheet is placed in SiO
2centre on protective seam, is provided with insulating gel between immediately below sapphire substrates and directly over base, and the one end just gone between is connected on front electrode, and the other end is connected on positive electricity pole; One end of negative lead-in wire is connected in step electrode, and the other end is connected on negative electricity pole; The each several part of arranging between described radioactive source sheet to base is all fixed by interior encapsulated layer, is coated with outer package layer in the periphery of interior encapsulated layer; Positive electricity pole, negative electricity pole respectively perpendicular to base, and pass base, interior encapsulated layer and outer package layer.
In described gallium nitrate based many knot transducing unit, the Rankine-Hugoniot relations of each several part replaces with, SiO
2protective seam, N
+gallium nitride layer, N gallium nitride layer, i gallium nitride layer, P gallium nitride layer, P
+gallium nitride layer, cushion, sapphire substrates are arranged from top to bottom successively, at N
+gallium nitride layer surface makes front electrode and not by SiO
2protective seam covers, at P
+the annular surface that gallium nitride layer is exposed makes step electrode, forms N
+niPP
+gallium nitrate based many knot transducing unit of type.
Described P
+gallium nitride layer doping content is 1 × 10
17~ 1 × 10
18/ cm
3, P gallium nitride layer doping content is 1 × 10
16~ 1 × 10
17/ cm
3, i gallium nitride layer is involuntary doped layer, and N gallium nitride layer doping content is 1 × 10
17~ 1 × 10
18/ cm
3, N
+gallium nitride layer doping content is 1 × 10
18~ 1 × 10
19/ cm
3.
Described radioactive source sheet is selected from Ni-63 radioactive source sheet, H-3 radioactive source sheet.
Gallium nitrate based multijunction device transducing unit manufacturing process in the present invention take sapphire as substrate, utilize MOVCD method thereon growing gallium nitride material be made into multijunction device simultaneously.First grown buffer layer, thickness is 2 ~ 4 μm; Then grow doping concentration is 1 × 10
18~ 1 × 10
19/ cm
3n
+gallium nitride layer, thickness is 0.2 ~ 0.8 μm; On it, grow doping concentration is 1 × 10
17~ 1 × 10
18/ cm
3n gallium nitride layer, thickness is 0.2 ~ 0.8 μm; The i gallium nitride layer of the involuntary doping of regrowth on it, thickness is 0.2 ~ 0.8 μm; On it, regrowth doping content is 1 × 10
16~ 1 × 10
17/ cm
3p gallium nitride layer, thickness is 0.2 ~ 0.8 μm; On it, regrowth doping content is 1 × 10
17~ 1 × 10
18/ cm
3p
+gallium nitride layer, thickness is 0.2 ~ 0.8 μm.So far P is formed
+piNN
+the multijunction structure of type.At P
+gallium nitride layer surface deposition Ni/Au forms Ohmic contact and makes front ring electrode, and makes the SiO not covering ring electrode
2protective seam.Etching P
+gallium nitride layer, P gallium nitride layer, i gallium nitride layer, N gallium nitride layer edge, expose N
+gallium nitride layer edge, at N
+gallium nitride layer edge deposits Ni/Au and form Ohmic contact making circular step electrode.So far gallium nitrate based P is made into
+piNN
+type multijunction device.
The another kind of manufacturing process of the gallium nitrate based multijunction device transducing unit in the present invention take sapphire as substrate, utilize MOVCD method thereon growing gallium nitride material be made into multijunction device simultaneously.First grown buffer layer, thickness is 2 ~ 4 μm; Then grow doping concentration is 1 × 10
17~ 1 × 10
18/ cm
3p
+gallium nitride layer, thickness is 0.2 ~ 0.8 μm; On it, grow doping concentration is 1 × 10
16~ 1 × 10
17/ cm
3p gallium nitride layer, thickness is 0.2 ~ 0.8 μm; The i gallium nitride layer of the involuntary doping of regrowth on it, thickness is 0.2 ~ 0.8 μm; On it, regrowth doping content is 1 × 10
17~ 1 × 10
18/ cm
3n gallium nitride layer, thickness is 0.2 ~ 0.8 μm; On it, regrowth doping content is 1 × 10
18~ 1 × 10
19/ cm
3n
+gallium nitride layer, thickness is 0.2 ~ 0.8 μm.So far N is formed
+niPP
+the multijunction structure of type.At N
+gallium nitride layer surface deposition Ni/Au forms Ohmic contact and makes front ring electrode, and makes the SiO not covering ring electrode
2protective seam.Etching N
+gallium nitride layer, N gallium nitride layer, i gallium nitride layer, P gallium nitride layer edge, expose P
+gallium nitride layer edge, at P
+gallium nitride layer edge deposits Ni/Au and form Ohmic contact making circular step electrode.So far gallium nitrate based N is made into
+niPP
+type multijunction device.
The technical scheme that accessory makes just is going between to connect front ring electrode and positive electricity pole, and negative lead-in wire connects step electrode and negative electricity pole.Utilize insulating gel that the sapphire of gallium nitrate based multijunction device one side is bonded in base centre, radioactive source sheet is placed in SiO
2centre on protective seam.Radioactive source sheet is selected from Ni-63 radioactive source sheet or H-3 radioactive source sheet.Interior encapsulated layer adopts radiation-resistant compound substance, is watered in the space of (except between radioactive source sheet and transducing unit) between the components by die perfusion method, plays fixing and radiation proof effect.Outer package layer FeNi kovar alloy makes, and plays and strengthens cell integrated intensity and radiation proof effect.Positive and negative electrode post is perpendicular to base and through base and interior outer package layer.Whole isotope battery is from the appearance the button shape with two electrode columns.
The principles of science of institute of the present invention foundation is: radioactive source ray incides in transducing unit, the electronics of vitalizing semiconductor material lattice atom, electronics is impelled to transit to conduction band from valence band, produce electron-hole pair and diffuse into interface, being separated of electronics and hole is realized under the built in field effect in interface, and utilize the Ohmic contact of junction device two end electrodes to be drawn by electronics, when connect external circuit time and generation current, formed isotope battery.In like manner, it is also based on this principle that the present invention mentions a kind of isotope battery with gallium-nitride-basemulti-junction multi-junction energy conversion unit, but owing to have employed multijunction device as transducing unit, wherein P in multijunction device
+p bed interface, Pi bed interface, iN bed interface, NN
+bed interface can form the interface with built in field respectively, considerably increases being separated and collection efficiency of electronics and hole, thus can improve short-circuit current and the open-circuit voltage of this cell output current than the single junction device of tradition.
The invention has the beneficial effects as follows: battery build is small, during work, do not need the external world to provide energy, short-circuit current 100nA ~ 1 μ A, the open-circuit voltage 0.8V ~ 1.5V of output current can be realized; Select H-3 radioactive source sheet can keep more than 6 years output currents incessantly, select Ni-63 radioactive source sheet can keep more than 45 years output currents incessantly.
Accompanying drawing explanation
Fig. 1 is the structural representation of a kind of isotope battery with gallium-nitride-basemulti-junction multi-junction energy conversion unit of the present invention;
In figure, 1. in radioactive source sheet 2. front electrode 3. outer package layer 4., encapsulated layer 5. step electrode 6. is just going between 7. insulating gel 8. base 9. positive electricity pole 10.SiO
2protective seam 11.P
+gallium nitride layer 12.P gallium nitride layer 13.i gallium nitride layer 14.N gallium nitride layer 15.N
+gallium nitride layer 16. cushion 17. negative lead-in wire 18. sapphire substrates 19. negative electricity pole.
Embodiment
Below in conjunction with accompanying drawing, content of the present invention is further illustrated.
Embodiment 1
Fig. 1 is the structural representation of a kind of isotope battery with gallium-nitride-basemulti-junction multi-junction energy conversion unit of the present invention.In Fig. 1, isotope battery with gallium-nitride-basemulti-junction multi-junction energy conversion unit of the present invention, containing gallium nitrate based many knot transducing unit and accessory; Described transducing unit comprises sapphire substrates 18, cushion 16, N gallium nitride layer 14, N
+gallium nitride layer 15, i gallium nitride layer 13, P
+gallium nitride layer 11, P gallium nitride layer 12, SiO
2protective seam 10, front electrode 2 and step electrode 5; In gallium nitrate based many knot transducing unit, the Rankine-Hugoniot relations of each several part is, SiO
2protective seam 10, P
+gallium nitride layer 11, P gallium nitride layer 12, i gallium nitride layer 13, N gallium nitride layer 14, N
+gallium nitride layer 15, cushion 16, sapphire substrates 18 are arranged, from top to bottom successively at P
+gallium nitride layer 11 surface makes front electrode 2 and not by SiO
2protective seam 10 covers, at N
+the annular surface that gallium nitride layer 15 is exposed makes step electrode 5, forms P
+piNN
+gallium nitrate based many knot transducing unit of type; Described accessory comprises radioactive source sheet 1, outer package layer 3, interior encapsulated layer 4, just goes between 6, negative lead-in wire 17, positive electricity pole 9, negative electricity pole 19, insulating gel 7 and base 8; In accessory, the Rankine-Hugoniot relations of each several part is, radioactive source sheet 1 is placed in SiO
2centre on protective seam 10, is provided with insulating gel 7 between immediately below sapphire substrates 18 and directly over base 8, just going between 6 one end be connected on front electrode 2, the other end is connected on positive electricity pole 9; One end of negative lead-in wire 17 is connected in step electrode 5, and the other end is connected on negative electricity pole 19; Between described radioactive source sheet 1 to base 8, each several part of arrangement is all fixed by interior encapsulated layer 4, is coated with outer package layer 3 in the periphery of interior encapsulated layer 4; Positive electricity pole 9, negative electricity pole 19 respectively perpendicular to base 8, and pass base 8, interior encapsulated layer 4 and outer package layer 3.
In the present embodiment, described P
+gallium nitride layer 11 doping content is 1 × 10
17/ cm
3, P gallium nitride layer 12 doping content is 1 × 10
16/ cm
3, i gallium nitride layer 13 is involuntary doped layer, and N gallium nitride layer 14 doping content is 1 × 10
17/ cm
3, N
+gallium nitride layer 15 doping content is 1 × 10
18/ cm
3.
Described radioactive source sheet 1 is Ni-63 radioactive source sheet.
Embodiment 2
The present embodiment is identical with Rankine-Hugoniot relations with the basic structure of embodiment 1, and difference is, in the gallium nitrate based many knot transducing unit in the present embodiment, the Rankine-Hugoniot relations of each several part is, SiO
2protective seam, N
+gallium nitride layer, N gallium nitride layer, i gallium nitride layer, P gallium nitride layer, P
+gallium nitride layer, cushion, sapphire substrates are arranged from top to bottom successively, at N
+gallium nitride layer surface makes front electrode and not by SiO
2protective seam covers, at P
+the annular surface that gallium nitride layer is exposed makes step electrode, forms N
+niPP
+gallium nitrate based many knot transducing unit of type.P in the present embodiment
+gallium nitride layer doping content is 1 × 10
18/ cm
3, P gallium nitride layer doping content is 1 × 10
17/ cm
3, i gallium nitride layer is involuntary doped layer, and N gallium nitride layer doping content is 1 × 10
18/ cm
3, N
+gallium nitride layer doping content is 1 × 10
19/ cm
3.
Embodiment 3
The present embodiment is identical with Rankine-Hugoniot relations with the basic structure of embodiment 1, and difference is, in the present embodiment, radioactive source sheet 1 is H-3 radioactive source sheet.
Embodiment 4
The present embodiment is identical with Rankine-Hugoniot relations with the basic structure of embodiment 2, and difference is, in the present embodiment, radioactive source sheet 1 is H-3 radioactive source sheet.
Accompanying drawings, in first embodiment, a kind of isotope battery with gallium-nitride-basemulti-junction multi-junction energy conversion unit is made up of gallium nitrate based many knot transducing unit and accessory.The structure of gallium nitrate based many knot transducing unit is SiO
2protective seam 10, P
+gallium nitride layer 11, P gallium nitride layer 12, i gallium nitride layer 13, N gallium nitride layer 14, N
+gallium nitride layer 15, cushion 16, sapphire substrates 18 are arranged, from top to bottom successively at P
+gallium nitride layer 11 surface makes front electrode 2 and not by SiO
2protective seam 10 covers, at N
+the annular surface that gallium nitride layer 15 is exposed makes step electrode 5, forms gallium nitrate based P
+piNN
+many knots transducing unit.The structure of accessory is for being placed in SiO containing Ni-63 radioactive source sheet 1
2centre on protective seam 10; Insulating gel 7 is positioned at immediately below sapphire substrates 18; Insulating gel 7 is positioned at centre on base 8; Just going between 6 one end be connected on front electrode 2, the other end is connected on positive electricity pole 9; One end of negative lead-in wire 17 is connected in step electrode 5, and the other end is connected on negative electricity pole 19; Base 8 comprises base 8 to be fixed by interior encapsulated layer 4 with upper part, its outer coated outer package layer 3 again; Positive electricity pole 9, negative electricity pole 19 perpendicular to base 8, and pass base 8, interior encapsulated layer 4 and outer package layer 3.
In the second embodiment, a kind of isotope battery with gallium-nitride-basemulti-junction multi-junction energy conversion unit is made up of gallium nitrate based many knot transducing unit and miscellaneous part.Gallium nitrate based P
+piNN
+the structure of many knots transducing unit is identical with first embodiment.The structure of accessory is for being placed in SiO containing H-3 radioactive source sheet 1
2centre on protective seam 10, other are identical with first embodiment.
In the 3rd embodiment, a kind of isotope battery with gallium-nitride-basemulti-junction multi-junction energy conversion unit is made up of gallium nitrate based many knot transducing unit and miscellaneous part.The structure of gallium nitrate based many knot transducing unit is SiO
2protective seam 10, N
+gallium nitride layer 15, N gallium nitride layer 14, i gallium nitride layer 13, P gallium nitride layer 12, P
+gallium nitride layer 11, cushion 16, sapphire substrates 18 are arranged, from top to bottom successively at N
+gallium nitride layer 15 surface makes front electrode 2 and not by SiO
2protective seam 10 covers, at P
+the annular surface that gallium nitride layer 11 is exposed makes step electrode 5, forms gallium nitrate based N
+niPP
+many knots transducing unit.The structure of accessory is identical with first embodiment.
In the 4th embodiment, a kind of isotope battery with gallium-nitride-basemulti-junction multi-junction energy conversion unit is made up of gallium nitrate based many knot transducing unit and miscellaneous part.Gallium nitrate based N
+niPP
+the structure of many knots transducing unit is identical with the 3rd embodiment.The structure of accessory is for being placed in SiO containing H-3 radioactive source sheet 1
2centre on protective seam 10, other are identical with first embodiment.
Claims (2)
1. an isotope battery with gallium-nitride-basemulti-junction multi-junction energy conversion unit, is characterized in that: described isotope battery contains gallium nitrate based many knot transducing unit and accessory; Described transducing unit comprises sapphire substrates (18), cushion (16), N gallium nitride layer (14), N+ gallium nitride layer (15), i gallium nitride layer (13), P+ gallium nitride layer (11), P gallium nitride layer (12), SiO
2protective seam (10), front electrode (2) and step electrode (5); In gallium nitrate based many knot transducing unit, the Rankine-Hugoniot relations of each several part is, SiO
2protective seam (10), P+ gallium nitride layer (11), P gallium nitride layer (12), i gallium nitride layer (13), N gallium nitride layer (14), N+ gallium nitride layer (15), cushion (16), sapphire substrates (18) are arranged from top to bottom successively, at P+ gallium nitride layer (11) surface making front electrode (2) and not by SiO
2protective seam (10) covers, and the annular surface exposed at N+ gallium nitride layer (15) makes step electrode (5), forms gallium nitrate based many knot transducing unit of P+PiNN+ type; Described accessory comprises radioactive source sheet (1), outer package layer (3), interior encapsulated layer (4), just go between (6), negative lead-in wire (17), positive electricity pole (9), negative electricity pole (19), insulating gel (7) and base (8); In accessory, the Rankine-Hugoniot relations of each several part is, radioactive source sheet (1) is placed in SiO
2centre on protective seam (10), is provided with insulating gel (7) between immediately below sapphire substrates (18) and directly over base (8), and the one end of just go between (6) is connected on front electrode (2), and the other end is connected on positive electricity pole (9); One end of negative lead-in wire (17) is connected in step electrode (5), and the other end is connected on negative electricity pole (19); Between described radioactive source sheet (1) to base (8), each several part of arrangement is all fixed by interior encapsulated layer (4), is coated with outer package layer (3) in the periphery of interior encapsulated layer (4); Positive electricity pole (9), negative electricity pole (19) respectively perpendicular to base (8), and pass base (8), interior encapsulated layer (4) and outer package layer (3);
Described P
+gallium nitride layer (11) doping content is 1 × 10
17~ 1 × 10
18/ cm
3, P gallium nitride layer (12) doping content is 1 × 10
16~ 1 × 10
17/ cm
3, i gallium nitride layer (13) is involuntary doped layer, and N gallium nitride layer (14) doping content is 1 × 10
17~ 1 × 10
18/ cm
3, N
+gallium nitride layer (15) doping content is 1 × 10
18~ 1 × 10
19/ cm
3; Described P
+gallium nitride layer (11) thickness is 0.2 ~ 0.8 μm, and P gallium nitride layer (12) thickness is 0.2 ~ 0.8 μm, and i gallium nitride layer (13) thickness is 0.2 ~ 0.8 μm, and N gallium nitride layer (14) thickness is 0.2 ~ 0.8 μm, N
+gallium nitride layer (15) thickness is 0.2 ~ 0.8 μm.
2. isotope battery according to claim 1, is characterized in that: in described gallium nitrate based many knot transducing unit, the Rankine-Hugoniot relations of each several part replaces with, SiO
2protective seam (10), N
+gallium nitride layer (15), N gallium nitride layer (14), i gallium nitride layer (13), P gallium nitride layer (12), P
+gallium nitride layer (11), cushion (16), sapphire substrates (18) are arranged, from top to bottom successively at N
+gallium nitride layer (15) surface makes front electrode (2) and not by SiO
2protective seam (10) covers, at P
+the annular surface that gallium nitride layer (11) is exposed makes step electrode (5), forms N
+niPP
+gallium nitrate based many knot transducing unit of type.
Priority Applications (1)
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|---|---|---|---|
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|---|---|---|---|
| CN201210110741.6A CN102610289B (en) | 2012-04-17 | 2012-04-17 | Isotope battery with gallium-nitride-based multi-junction energy conversion unit |
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| CN104064242A (en) * | 2014-06-29 | 2014-09-24 | 西安电子科技大学 | Sandwiched parallel connection type epitaxy GaN PIN type beta irradiation battery and preparation method thereof |
| CN104464868B (en) * | 2014-12-22 | 2017-01-25 | 厦门大学 | GaN Schottky junction type nuclear battery and manufacturing method thereof |
| CN110491541B (en) * | 2018-10-29 | 2021-04-13 | 长安大学 | H-3 silicon carbide isotope battery and manufacturing method thereof |
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| CN101599308A (en) * | 2009-06-30 | 2009-12-09 | 西北工业大学 | Has minisize nuclear battery of protection ring structure and preparation method thereof |
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| US7906229B2 (en) * | 2007-03-08 | 2011-03-15 | Amit Goyal | Semiconductor-based, large-area, flexible, electronic devices |
| US7119271B2 (en) * | 2001-10-12 | 2006-10-10 | The Boeing Company | Wide-bandgap, lattice-mismatched window layer for a solar conversion device |
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| CN101101797A (en) * | 2007-07-20 | 2008-01-09 | 大连理工大学 | Isotope element battery production method and structure |
| CN101527175A (en) * | 2009-04-10 | 2009-09-09 | 苏州纳米技术与纳米仿生研究所 | PIN type nuclear battery and preparation method thereof |
| CN101599308A (en) * | 2009-06-30 | 2009-12-09 | 西北工业大学 | Has minisize nuclear battery of protection ring structure and preparation method thereof |
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