CN107767983A - A kind of tritium based nanotube isotope battery - Google Patents

A kind of tritium based nanotube isotope battery Download PDF

Info

Publication number
CN107767983A
CN107767983A CN201710849973.6A CN201710849973A CN107767983A CN 107767983 A CN107767983 A CN 107767983A CN 201710849973 A CN201710849973 A CN 201710849973A CN 107767983 A CN107767983 A CN 107767983A
Authority
CN
China
Prior art keywords
nanotube
tritium
wide bandgap
bandgap semiconductor
radiation source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201710849973.6A
Other languages
Chinese (zh)
Inventor
张子庚
任易
张瑜桀
张核元
任容
任琤
张镁元
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
One Element (guangzhou) Technology Co Ltd
Original Assignee
One Element (guangzhou) Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by One Element (guangzhou) Technology Co Ltd filed Critical One Element (guangzhou) Technology Co Ltd
Priority to CN201710849973.6A priority Critical patent/CN107767983A/en
Publication of CN107767983A publication Critical patent/CN107767983A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G21NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21HOBTAINING ENERGY FROM RADIOACTIVE SOURCES; APPLICATIONS OF RADIATION FROM RADIOACTIVE SOURCES, NOT OTHERWISE PROVIDED FOR; UTILISING COSMIC RADIATION
    • G21H1/00Arrangements for obtaining electrical energy from radioactive sources, e.g. from radioactive isotopes, nuclear or atomic batteries
    • G21H1/06Cells wherein radiation is applied to the junction of different semiconductor materials
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Battery Electrode And Active Subsutance (AREA)

Abstract

The invention discloses a kind of tritium based nanotube isotope battery, including underlayer electrode, top electrodes, wide bandgap semiconductor nanotube layer and isotopic radiation source;The wide bandgap semiconductor nanotube layer includes multiple nanotubes, the surface of the nanotube has schottky junction or hetero-junctions, the multiple nanotube is parallel to each other in wide bandgap semiconductor nanotube layer, the wide bandgap semiconductor nanotube layer is located between underlayer electrode and top electrodes, and the isotopic radiation source is in wide bandgap semiconductor nanotube layer and/or between wide bandgap semiconductor nanotube layer and top electrodes;The material in the isotopic radiation source includes tritium.Tritium based nanotube isotope battery of the present invention, the energy converslon materials used is semiconducting nanotubes, the utilization rate of Radioactive Source Decay particle is improved to greatest extent, and multigroup battery unit multilayer stacking integration packaging is realized by mode in parallel or series, can reach high unit volume power output.

Description

A kind of tritium based nanotube isotope battery
Technical field
The present invention relates to a kind of isotope battery, and in particular to a kind of tritium based nanotube isotope battery.
Background technology
With the fast development of micro-nano technology technology, based on the micro- of microsensor, microactrator and microelectronic chip composition Oneself system be used widely in military and civilian field, such as:It is microrobot, long-distance distribution wireless monitoring device, miniature Navigation system, distributed Microsensor network, miniature pilotless plane, micro-nano satellite etc..These micro-systems are required to high efficiency, low Power consumption, the power adapter of long-life.The energy resource system of comparative maturity includes in the market:New chemical battery, solar-electricity Pond, fuel cell etc..Chemical cell needs irregularly to change or charging, therefore service life is limited, it is difficult to meets that micro-system connects Continuous requirements of one's work, are particularly unsuitable for the high workplace of mobility, long life requirement, in addition, chemical cell also has height The shortcomings of cryogenic property difference is big, and activationary time is partially long.Solar battery technology is ripe, and luminous energy is readily available, and application prospect is wide It is wealthy, but field of employment and the limited time system, the power output to improve solar-energy photo-voltaic cell can only be by increasing illumination Surface is realized;Fuel cell high conversion efficiency, it is not necessary to cycle charging, but cost is high, and technical difficulty is big, and needs necessarily Bunkering volume is, it is necessary to regular replenishment fuel.For " bottleneck " problem of above-mentioned battery, scientific research personnel contemplated " core in recent years The energy ".Nuclear power source is the ultimate energy in universe, is important channel and the guarantee of human civilization sustainable development.However, it is contemplated that Security and economy, the one form of which isotopic radiation of nuclear power source can be considered as the time for manufacturing energy battery most rationality Select the energy.Compared with above-mentioned various micro- energy, nuclear battery has the advantage that:1) nuclear battery small volume, it is easy to be miniaturized, integrates Change;2) service life is grown;3) battery energy density is high;4) environmental suitability of nuclear battery is strong, and battery output characteristics is stable.Although Meet that the radioisotope material species of nuclear battery manufacture is a lot, but be not that every kind of isotope material can be applied to nuclear power Pond.Radioactive source selection will consider ray particle species, particle spectrum distribution, the range in semiconductor target, to material Damage, the activity etc. of half-life period and radioactive source.Theoretically, the radioactive source of alpha ray, β rays and low-energyγ-ray is discharged All can be as the energy source of minisize nuclear battery.And in fact, although alpha ray penetration capacity is weak, but semi-conducting material is easily caused Point defect radiation injury, the α particles average energy of alpha-decay release is in 5MeV, and its ionizing power is very strong, to caused by human health Harm is also very big.And gamma-rays penetration capacity is very strong, shielding is difficult, and great damage, and semi-conducting material can be caused to human body It is limited to gamma-ray capacity gauge.Therefore minisize nuclear battery is generally using radiator beta-ray as radiation source.Up to the present, often By the use of as minisize nuclear battery radiation source have tritium (3H), nickel -63 (63Ni), Strontium-90 (90Sr) and promethium -147 (147Pm) etc., consider To factors such as emittance, half-life period, physical form, manufacturing costs, tritium is the optimal selection of nuclear battery.
Although isotopic radiation can have a clear superiority in use environment, usage time and energy density than other energy, But the engineer applied bottleneck of current minisize nuclear battery is mainly that energy conversion efficiency is too low.With based on beta (β) volta effect Exemplified by semiconductor core battery, its conversion efficiency is imitated dependent on the separation of the mode of action and carrier of isotopic source and transition material Rate.Traditional semiconductor core battery utilizes monocrystalline semiconductor wafer or epitaxial growth single crystal semiconductor, and passes through doping or heterogeneous Contact forms plane barrier region, and not only cost of manufacture is high, while the utilization ratio of radiation source is also very low, and total energy transfer efficient leads to Often it is no more than 5%, the application of engineering can not be met.Therefore, it is current for how improving the energy conversion efficiency of minisize nuclear battery The task of top priority of research.In recent years, with the fast development of micro-nano technology, the forbidden band based on nano tube structure array structure Wide semi-conducting material is fast-developing, and is used for solar cell, photocatalysis and sensor field.
The content of the invention
A kind of tritium based nanotube isotope is provided it is an object of the invention to overcome the shortcomings of the prior art part Battery.
To achieve the above object, the technical scheme taken of the present invention is:A kind of tritium based nanotube isotope battery, including lining Hearth electrode, top electrodes, wide bandgap semiconductor nanotube layer and isotopic radiation source;The wide bandgap semiconductor nanotube layer bag Containing multiple nanotubes, the surface of the nanotube has schottky junction or hetero-junctions, and the multiple nanotube, which is parallel to each other, to be located at In wide bandgap semiconductor nanotube layer, the wide bandgap semiconductor nanotube layer is located between underlayer electrode and top electrodes, institute State isotopic radiation source in the wide bandgap semiconductor nanotube layer and/or wide bandgap semiconductor nanotube layer and top electrodes it Between;The material in the isotopic radiation source includes tritium.
The energy converslon materials that tritium based nanotube isotope battery of the present invention uses is that wide bandgap semiconductor crystalline state is received Mitron.Wide bandgap semiconductor has the characteristics of density is big, Antiradiation injury ability is strong, and electricity is exported with the isotope battery of its preparation Pressure is high, therefore has higher energy conversion efficiency and device stability.The high specific surface area of nano-tube material can improve same position Plain radiant energy absorbance efficiency, the open-circuit voltage and short circuit current of battery are improved, so as to improve energy conversion efficiency.
Tritium based nanotube isotope battery of the present invention is a kind of sandwich structure, and wide bandgap semiconductor nanotube passes through Either physically or chemically ordered arrangement is assembled on underlayer electrode, and by either physically or chemically making dissimilar materials with receiving Mitron carries out the built in field rush that effective surface recombination forms schottky junction or hetero-junctions, schottky junction or hetero-junctions hetero-junctions Make beta radiation cause electron-hole pair to efficiently separate, and transmitted respectively along dissimilar materials and nanotube, substantially reduce electronics and sky The recombination probability in cave, effectively improve the energy conversion efficiency of battery.
Heretofore described multiple nanotubes be parallel to each other in wide bandgap semiconductor nanotube layer it is parallel not be Strict is parallel, and refers between multiple nanotubes close to parallel, mutually without interlocking between nanotube.
The material in the isotopic radiation source can be the inorganic compound or organic high molecular compound of tritium.Triton element β emittance is relatively low (average~5.7Kev), and its Beta-ray aerial maximum range is about 5mm;In water or soft group Maximum range in knitting is about 0.005mm, therefore very safe, without shielding.The half-life period of tritium is 12.3, it is ensured that is provided Electricity consumption in 10 years, while too long or eternal radioactive pollution will not be caused.In addition, the physical form of tritium is various, has and be easy to collect Into, it is cheap, manufacturing cost is low the characteristics of, be nuclear battery radiation source optimal selection.
The isotopic radiation source can be located in wide bandgap semiconductor nanotube layer, can also be located at wide bandgap semiconductor Between nanotube layer and top electrodes, it can also be located in wide bandgap semiconductor nanotube layer and wide bandgap semiconductor nanotube layer Between top electrodes.
The isotopic radiation source represents that the isotopic radiation source is located in wide bandgap semiconductor nanotube layer and received In in mitron and/or space that multiple nanotubes for being parallel to each other are formed, preferably described isotopic radiation source is located at nanotube In the space that interior and multiple nanotubes for being parallel to each other are formed, during using the set-up mode, nanotube and same position are substantially increased The contact area of plain radiation source, so as to improve the power output of battery.Isotopic radiation source can be liquid, gaseous state or solid State, the isotopic radiation source of liquid, gaseous state or solid-state can be received wide bandgap semiconductor by using method physically or chemically Nanotube material is compound in nanotube and in the space that the multiple nanotubes being parallel to each other are formed, and realizes radiation source material and nanometer The abundant contact of pipe surface, greatly improve the area of energy conversion active area.
The cover plate of bottom plate and top electrodes of the tritium based nanotube isotope battery also including underlayer electrode, the substrate The bottom plate of electrode is on surface of the underlayer electrode away from wide bandgap semiconductor nanotube layer side, the cover plate of the top electrodes On surface of the top electrodes away from wide bandgap semiconductor nanotube layer side.The bottom plate and top electrodes of the underlayer electrode Cover plate play a supportive role, material can be selected from insulator and metal material.
Tritium based nanotube isotope battery of the present invention is to realize high unit volume power output, can pass through parallel connection Or series system realizes multigroup unit multi-layer stacking integration packaging.To be integrated with the underlayer electrode of nanotube as unit, and successively Multigroup unit stacking is superimposed and encapsulated.Positive pole and negative pole topmost will be collected with nethermost electrode definition, battery can be achieved Group is connected in series;Odd electrode is connected as to collect positive pole, even electrode is connected as collection negative pole and realizes that the in parallel of battery pack connects Connect.
Preferably, the isotopic radiation source is located in wide bandgap semiconductor nanotube layer and wide bandgap semiconductor nanotube Between layer and top electrodes.
The isotopic radiation source is in wide bandgap semiconductor nanotube layer and wide bandgap semiconductor nanotube layer is with pushing up Between portion's electrode, that is, the isotopic radiation source is located at the space that multiple nanotubes that nanotube is interior, is parallel to each other are formed Neutralize between wide bandgap semiconductor nanotube layer and top electrodes.Can be by being either physically or chemically filled in tritide In nanotube, in the space that multiple nanotubes for being parallel to each other are formed and wide bandgap semiconductor nanotube layer and top electrodes it Between.Isotopic radiation source can realize inside and outside, top three-dimensional radiation of the radioactive source to semiconducting nanotubes using the setting, Greatly improve the power output of battery.Filling radiation source material can make semiconducting nanotubes array more between nanotube space simultaneously Add compact and firm, improve the mechanics fastness and stability of battery.
It is highly preferred that the length direction of the nanotube is vertical with underlayer electrode.
When the length direction of nanotube is vertical with underlayer electrode, electrical conductivity is higher, is advantageous to the directed transport of carrier.
Preferably, the material in the isotopic radiation source is the compound graphene of tritium and/or the compound high molecular polymerization of tritium Thing.
It is highly preferred that the material in the isotopic radiation source in wide bandgap semiconductor nanotube layer is compound for tritium High molecular polymer, the material in the isotopic radiation source between the wide bandgap semiconductor nanotube layer and top electrodes are answered for tritium The graphene of conjunction.
High molecular polymer is non-conductive, and isotopic radiation source, graphene are used as in wide bandgap semiconductor nanotube layer It is electrically conductive, it can not only be used as isotopic radiation source between wide bandgap semiconductor nanotube layer and top electrodes but also can make For conductive electrode.
Preferably, the material of the nanotube be metal oxide, semiconducting compound and semiconductor simple substance at least It is a kind of;The semiconducting compound is the semiconductor chemical combination containing group IIIA, the Vth A races, II A races, II B races or VI A races element Thing.
Preferably, the material of the nanotube includes zinc oxide, zirconium dioxide, titanium dioxide, gallic oxide, titanium dioxide Tin, tungstic acid, gallium nitride, gallium phosphide, indium nitride, aluminium nitride, aluminum phosphate, aluminium arsenide, cadmium sulfide, zinc sulphide, magnesium sulfide, selenium Change at least one of zinc, magnesium selenide, silicon and diamond.
Preferably, a diameter of 10~1000nm of the nanotube, length are 5~1000 μm.
The preparation method of nanotube of the present invention is:On the underlayer electrode prepared, pass through physically or chemically technique It is good to prepare orientation, the nano-tube array of ordered arrangement, and sample is subjected to high annealing, diameter is obtained in 10-1000nm Between, wide bandgap semiconductor nanotube layer of the length in 5-1000 μm of crystallization.Using above-mentioned draw ratio nanotube when, can increase Add the active area of isotope material and energy converslon materials, improve the utilization rate of Radioactive Source Decay particle to greatest extent, from And improve energy conversion efficiency.
Preferably, the material of the top electrodes and underlayer electrode be metal, semiconductor, conducting polymer, electrocondution slurry, At least one of graphite and graphene.
The metal can be the high conductive metal materials such as gold, silver, aluminium, copper.
Preferably, the schottky junction or heterogeneous become are modified or mixed to the surface of nanotube using dissimilar materials Miscellaneous formation.
Preferably, the dissimilar materials is at least one of semiconductor, metal, graphene and macromolecule conducting material.
Preferably, the semiconductor be selected from metal oxide, the compound semiconducting compound of group IIIA and the Vth A races and II B-group and the compound semiconducting compounds of the VIth A;The metal is selected from gold, silver and platinum;The macromolecule conducting material is selected from Polypyrrole, polyphenylene sulfide, polyaniline and polythiophene.
For example, metal oxide can be selected from ZnO, SnO2、In2O3Gallium nitride, phosphorus can be selected from Deng, semiconducting compound Change gallium, indium nitride, aluminium nitride, aluminum phosphate, aluminium arsenide, cadmium sulfide, zinc sulphide, magnesium sulfide, zinc selenide, magnesium selenide etc..
Tritium based nanotube isotope battery of the present invention utilizes dissimilar materials modifying semiconductor nanotube.By in nanometer Compound dissimilar materials, semiconductor, metal, graphene, macromolecule conducting material etc. on pipe, on nanotube whole length surface SEMICONDUCTOR-METAL Schottky barrier is formed, its built in field promotes beta radiation to cause electron-hole pair to efficiently separate, and respectively Transmitted along dissimilar materials and nanotube, substantially reduce electronics and the recombination probability in hole, the energy for being effectively improved battery turns Change efficiency.
The beneficial effects of the present invention are:It is of the present invention the invention provides a kind of tritium based nanotube isotope battery The energy converslon materials that isotope battery uses is semiconducting nanotubes, and the use of nanotube can increase isotopic radiation source and energy The active area of transition material is measured, improves the utilization rate of Radioactive Source Decay particle to greatest extent;The Schottky of nanotube surface Knot or hetero-junctions can improve the efficiency of electron hole pair separation and transfer caused by isotopic radiation source radiation, reduce carrier Recombination rate, effectively improve the energy conversion efficiency of battery;The use of radiation source containing tritium, make battery more efficient, safe, by liquid The isotopic radiation source of state, gaseous state or solid-state can be by using method physically or chemically and wide bandgap semiconductor nanotube Being compound in nanotube and in the space that the multiple nanotubes being parallel to each other are formed for material, realizes radiation source material and nanotube Surface fully contacts, and the area of energy conversion active area greatly improved.Tritium based nanotube isotope battery of the present invention can So that by realizing multigroup unit multi-layer stacking integration packaging in a manner of in parallel or series, high unit volume power output can be achieved, With small volume and the characteristics of high energy density.
Brief description of the drawings
Fig. 1 is the structural representation of tritium based nanotube isotope battery described in embodiment 1;
Fig. 2 is the structural representation of tritium based nanotube isotope battery described in embodiment 2;
Fig. 3 is the multilayer series connection stacking encapsulation schematic diagram of multigroup tritium based nanotube isotope battery unit;
Fig. 4 is the Multi-layer Parallel stacking encapsulation schematic diagram of multigroup tritium based nanotube isotope battery unit.
Embodiment
To better illustrate the object, technical solutions and advantages of the present invention, below in conjunction with specific embodiment to the present invention It is described further.
Embodiment 1
A kind of embodiment of tritium based nanotube isotope battery of the present invention, as shown in figure 1, being followed successively by top from top to bottom Cover plate 1, top electrodes 2, isotopic radiation source 3, wide bandgap semiconductor nanotube layer 4, underlayer electrode 5 and the substrate electricity of portion's electrode The bottom plate 6 of pole.
Multiple nanotubes 7 are provided with wide bandgap semiconductor nanotube layer 4 described in the present embodiment, multiple nanotubes 7 are mutually flat Row is set, and the surface of wide bandgap semiconductor nanotube layer 4 carries out surface modification using graphene 8 as dissimilar materials;It is described The material of wide bandgap semiconductor nanotube is titanium dioxide, and the material of the underlayer electrode is electro-conductive glass, top electrode material For tinsel, the isotopic radiation source is the compound of tritium and graphene.
The preparation method of tritium based nanotube isotope battery, is comprised the steps of described in the present embodiment:
(1), the preparation of underlayer electrode, top electrodes;
(2), the preparation of wide bandgap semiconductor nanotube layer:On the underlayer electrode prepared, pass through physically or chemically work Skill prepares orientation well, the nano-tube array that multiple nanotubes are parallel to each other, such as can be in metal titanium sheet using electrification Learn anode oxidation process and prepare titania nanotube layer.Then high annealing is carried out to sample, obtains diameter in 10-1000nm Between, wide bandgap semiconductor Nanotube Array assembled layers of the length in 5-1000 μm of crystallization;
(3), the surface of wide bandgap semiconductor nanotube is modified:By graphene oxide be dispersed or dissolved in methanol or In the organic solutions such as ethanol, then gained dispersion liquid instiled in wide bandgap semiconductor nanotube layer, by physically or chemically etc. Method redox graphene, makes graphene be attached to nanotube surface;The restoring method can be reducing agent reducing process, heat Reducing process, ultraviolet irradiation reducing process, electrochemical reducing etc.;Film thickness is between 1-30nm;
(4), isotopic radiation source and wide bandgap semiconductor nanotube layer is compound:By physical method, by solid-state or liquid State radioactive source material introduces the interior space between pipe of wide bandgap semiconductor nanotube;Or by chemical reaction method, make radiation source thing Matter combines and fills up space between semiconducting nanotubes and pipe;Top tritium radiating layer is using tritium and the compound of graphene;Realize tritium Inside and outside, upper three-dimensional radiation of the radioactive source material to semiconducting nanotubes.
(5), the encapsulation of isotope battery:Isotopic radiation source 3 is placed in the upper table of wide bandgap semiconductor nanotube layer 4 Face, top electrodes 2 are pressed on the wide bandgap semiconductor nanotube layer 4 for being placed with isotopic radiation source, are covered with top electrodes Cover plate 1, and contact conductor is picked out from underlayer electrode 5 and top electrodes 2 respectively, insulated enclosure guarantor then is carried out to battery edge Shield, finally gives tritium based nanotube isotope battery as shown in Figure 1.
Embodiment 2
A kind of embodiment of tritium based nanotube isotope battery of the present invention, as shown in Fig. 2 being followed successively by top from top to bottom Cover plate 9, top electrodes 10, isotopic radiation source 11, wide bandgap semiconductor nanotube layer 12, underlayer electrode 13 and the lining of portion's electrode The bottom plate 14 of hearth electrode.
Multiple nanotubes 16 are provided with wide bandgap semiconductor nanotube layer 12 described in the present embodiment, multiple nanotubes 16 are mutual It is arranged in parallel, the surface of wide bandgap semiconductor nanotube layer 12 carries out surface as dissimilar materials using noble metal gold 15 and repaiied Decorations;The material of the wide bandgap semiconductor nanotube is titanium dioxide, and the material of the wide bandgap semiconductor nanotube is dioxy Change titanium, the material of the underlayer electrode is electro-conductive glass, and top electrode material is tinsel, and the isotopic radiation source is tritium With the compound of graphene.
The preparation method of tritium based nanotube isotope battery, is comprised the steps of described in the present embodiment:
(1), the preparation of underlayer electrode, top electrodes;
(2), the preparation of wide bandgap semiconductor nanotube layer:On the underlayer electrode prepared, pass through physically or chemically work Skill prepares orientation well, the nano-tube array that multiple nanotubes are parallel to each other, and sample is carried out into high annealing, obtains diameter Between 10-1000nm, wide bandgap semiconductor Nanotube Array assembled layers of the length in 5-1000 μm of crystallization;
(3), the surface of wide bandgap semiconductor nanotube is modified:Base is used as using wide bandgap semiconductor nanotube layer Piece, using gold target as target source, using magnetron sputtering or d.c. sputtering technology forms golden film in nanotube surface or gold grain is modified, Golden film thickness is 5-100nm, and particle diameter is between 1-30nm;
(4), isotopic radiation source and wide bandgap semiconductor nanotube layer is compound:By physical method, by solid-state or liquid State radioactive source material introduces the interior space between pipe of wide bandgap semiconductor nanotube;Or by chemical reaction method, make radiation source thing Matter combines and fills up space between semiconducting nanotubes and pipe;Top tritium radiating layer is using tritium and the compound of graphene;Realize tritium Inside and outside, upper three-dimensional radiation of the radioactive source material to semiconducting nanotubes;
(5), the encapsulation of isotope battery:Isotopic radiation source 11 is placed in the upper table of wide bandgap semiconductor nanotube layer 12 Face, top electrodes 10 are pressed on the wide bandgap semiconductor nanotube layer 12 for being placed with isotopic radiation source, are covered with top electrodes Cover plate 9, and pick out contact conductor from underlayer electrode 13 and top electrodes 10 respectively, insulated enclosure then carried out to battery edge Protection, finally gives tritium based nanotube isotope battery as shown in Figure 2.
Embodiment 3
As shown in figure 3, tritium based nanotube isotope battery described in multiple embodiments 1 is realized by way of series connection multigroup Unit multi-layer stacking integration packaging, mainly include external load 17, storage capacitance 18, wide bandgap semiconductor nanotube isotope electricity Pool unit 19 and external wire 20.
As shown in figure 4, tritium based nanotube isotope battery described in multiple embodiments 1 is realized by way of in parallel multigroup Unit multi-layer stacking integration packaging, mainly include external load 21, storage capacitance 22, wide bandgap semiconductor nanotube isotope electricity Pool unit 23 and external wire 24.
Tritium based nanotube isotope battery cascade encapsulation specific method be:It is same with tritium based nanotube described in embodiment 1 The plain battery in position is unit, and is superimposed multigroup unit stacking encapsulates successively.Topmost it will be collected with nethermost electrode definition Positive pole and negative pole, achievable battery pack are connected in series, as shown in Figure 3;Unit odd electrode is connected as to collect positive pole, even number electricity Pole is connected as collection negative pole and realizes being connected in parallel for battery pack, as shown in Figure 4.
Finally, it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention rather than the present invention is protected The limitation of scope is protected, although being explained in detail with reference to preferred embodiment to the present invention, one of ordinary skill in the art should Understand, technical scheme can be modified or equivalent substitution, without departing from the essence of technical solution of the present invention And scope.

Claims (10)

1. a kind of tritium based nanotube isotope battery, it is characterised in that including underlayer electrode, top electrodes, wide bandgap semiconductor Nanotube layer and isotopic radiation source;The wide bandgap semiconductor nanotube layer includes multiple nanotubes, the table of the nanotube Face has schottky junction or hetero-junctions, and the multiple nanotube is parallel to each other in wide bandgap semiconductor nanotube layer, described Wide bandgap semiconductor nanotube layer is located between underlayer electrode and top electrodes, and the isotopic radiation source is partly led located at broad stopband In body nanotube layer and/or between wide bandgap semiconductor nanotube layer and top electrodes;The material bag in the isotopic radiation source Containing tritium.
2. tritium based nanotube isotope battery as claimed in claim 1, it is characterised in that prohibit located at wide in the isotopic radiation source In band semiconductor nano tube layer between wide bandgap semiconductor nanotube layer and top electrodes.
3. tritium based nanotube isotope battery as claimed in claim 1, it is characterised in that the length direction and lining of the nanotube Hearth electrode is vertical.
4. tritium based nanotube isotope battery as claimed in claim 1, it is characterised in that the material in the isotopic radiation source is The compound graphene of tritium and/or the compound high molecular polymer of tritium;Preferably, it is described in wide bandgap semiconductor nanotube layer The material in isotopic radiation source be the compound high molecular polymer of tritium, the wide bandgap semiconductor nanotube layer and top electrodes Between the material in isotopic radiation source be the compound graphene of tritium.
5. tritium based nanotube isotope battery as claimed in claim 1, it is characterised in that the material of the nanotube is metal oxygen At least one of compound, semiconducting compound and semiconductor simple substance;The semiconducting compound is to contain group IIIA, the Vth A Race, II A races, the semiconducting compound of II B races or VI A races element.
6. tritium based nanotube isotope battery as claimed in claim 1, it is characterised in that the material of the nanotube includes oxidation Zinc, zirconium dioxide, titanium dioxide, gallic oxide, tin ash, tungstic acid, gallium nitride, gallium phosphide, indium nitride, nitridation At least one of aluminium, aluminum phosphate, aluminium arsenide, cadmium sulfide, zinc sulphide, magnesium sulfide, zinc selenide, magnesium selenide, silicon and diamond.
7. tritium based nanotube isotope battery as claimed in claim 1, it is characterised in that a diameter of the 10 of the nanotube~ 1000nm, length are 5~1000 μm.
8. tritium based nanotube isotope battery as claimed in claim 1, it is characterised in that the underlayer electrode and top electrodes Material is at least one of metal, semiconductor, conducting polymer, electrocondution slurry, graphite and graphene.
9. tritium based nanotube isotope battery as claimed in claim 1, it is characterised in that the schottky junction or heterogeneous become are adopted The surface of nanotube is modified or adulterated with dissimilar materials to be formed.
10. tritium based nanotube isotope battery as claimed in claim 9, it is characterised in that the dissimilar materials is semiconductor, gold At least one of category, graphene and macromolecule conducting material.
CN201710849973.6A 2017-09-19 2017-09-19 A kind of tritium based nanotube isotope battery Pending CN107767983A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710849973.6A CN107767983A (en) 2017-09-19 2017-09-19 A kind of tritium based nanotube isotope battery

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710849973.6A CN107767983A (en) 2017-09-19 2017-09-19 A kind of tritium based nanotube isotope battery

Publications (1)

Publication Number Publication Date
CN107767983A true CN107767983A (en) 2018-03-06

Family

ID=61265631

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710849973.6A Pending CN107767983A (en) 2017-09-19 2017-09-19 A kind of tritium based nanotube isotope battery

Country Status (1)

Country Link
CN (1) CN107767983A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108847296A (en) * 2018-06-22 2018-11-20 中国工程物理研究院核物理与化学研究所 A kind of spoke volt class isotope battery interconnection architecture
CN108862184A (en) * 2018-07-12 2018-11-23 厦门大学 A kind of resonant mode surface acoustic wave wireless sensor of isotope battery energy supply
CN109036071A (en) * 2018-08-13 2018-12-18 佛山市三水区希望火炬教育科技有限公司 A kind of dedicated starry sky soldier model of teenager's research in defense-related science and technology
CN110428923A (en) * 2019-08-09 2019-11-08 哈尔滨工业大学 Improve the diamond Schottky isotope battery and preparation method thereof of performance using zinc oxide film
CN111446019A (en) * 2019-01-25 2020-07-24 厦门大学 Three-dimensional nano-structure tritium photovoltaic battery
CN112750548A (en) * 2021-01-29 2021-05-04 厦门大学 Radioactive three-dimensional nanostructure photovoltaic electrochemical cell
CN112750547A (en) * 2021-01-29 2021-05-04 厦门大学 Photovoltaic electrochemical radioisotope battery
CN113574679A (en) * 2019-03-18 2021-10-29 索拉沃特有限责任公司 Solar cell array module for power generation
RU2813551C1 (en) * 2022-12-27 2024-02-13 Федеральное государственное бюджетное образовательное учреждение высшего образования "Московский государственный университет имени М.В. Ломоносова" (МГУ) Method for producing highly tritium-labelled graphene oxide

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101393938A (en) * 2007-12-28 2009-03-25 北京大学 Wide forbidden region semi-conductor nano tube/linear array film, preparation and photoelectric pole thereof
CN101645317A (en) * 2009-08-11 2010-02-10 西安交通大学 Isotope battery of carbon nano tube
CN102097149A (en) * 2011-01-26 2011-06-15 四川大学 Tritium storage thin film electrode for radioactive isotopic voltaic effect beta battery and design of integrating same with semiconductor
CN102446572A (en) * 2011-12-19 2012-05-09 中国工程物理研究院核物理与化学研究所 Tritium isotope microcell and preparation method thereof
CN102737747A (en) * 2012-07-05 2012-10-17 四川大学 Micro tritium battery and preparation method of micro tritium battery
CN104200864A (en) * 2014-08-25 2014-12-10 厦门大学 Isotope battery based on wide bandgap semiconductor nano-tube array film structure
CN105575453A (en) * 2015-12-29 2016-05-11 兰州大学 Composite dynamic isotope battery based on nanometer materials and preparation method thereof

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101393938A (en) * 2007-12-28 2009-03-25 北京大学 Wide forbidden region semi-conductor nano tube/linear array film, preparation and photoelectric pole thereof
CN101645317A (en) * 2009-08-11 2010-02-10 西安交通大学 Isotope battery of carbon nano tube
CN102097149A (en) * 2011-01-26 2011-06-15 四川大学 Tritium storage thin film electrode for radioactive isotopic voltaic effect beta battery and design of integrating same with semiconductor
CN102446572A (en) * 2011-12-19 2012-05-09 中国工程物理研究院核物理与化学研究所 Tritium isotope microcell and preparation method thereof
CN102737747A (en) * 2012-07-05 2012-10-17 四川大学 Micro tritium battery and preparation method of micro tritium battery
CN104200864A (en) * 2014-08-25 2014-12-10 厦门大学 Isotope battery based on wide bandgap semiconductor nano-tube array film structure
CN105575453A (en) * 2015-12-29 2016-05-11 兰州大学 Composite dynamic isotope battery based on nanometer materials and preparation method thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
张强: "基于一维纳米结构的宽禁带半导体同位素电池的研究", 《厦门大学硕士学位论文(万方数据库)》 *

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108847296A (en) * 2018-06-22 2018-11-20 中国工程物理研究院核物理与化学研究所 A kind of spoke volt class isotope battery interconnection architecture
CN108847296B (en) * 2018-06-22 2020-05-15 中国工程物理研究院核物理与化学研究所 Electricity interconnection structure for spoke type homomorphic cell
CN108862184A (en) * 2018-07-12 2018-11-23 厦门大学 A kind of resonant mode surface acoustic wave wireless sensor of isotope battery energy supply
CN108862184B (en) * 2018-07-12 2020-01-07 厦门大学 Resonance type surface acoustic wave wireless sensor powered by isotope battery
CN109036071A (en) * 2018-08-13 2018-12-18 佛山市三水区希望火炬教育科技有限公司 A kind of dedicated starry sky soldier model of teenager's research in defense-related science and technology
CN111446019A (en) * 2019-01-25 2020-07-24 厦门大学 Three-dimensional nano-structure tritium photovoltaic battery
CN113574679A (en) * 2019-03-18 2021-10-29 索拉沃特有限责任公司 Solar cell array module for power generation
CN110428923A (en) * 2019-08-09 2019-11-08 哈尔滨工业大学 Improve the diamond Schottky isotope battery and preparation method thereof of performance using zinc oxide film
CN110428923B (en) * 2019-08-09 2021-06-29 哈尔滨工业大学 Diamond Schottky isotope battery adopting zinc oxide layer to improve performance and preparation method thereof
CN112750547A (en) * 2021-01-29 2021-05-04 厦门大学 Photovoltaic electrochemical radioisotope battery
CN112750548A (en) * 2021-01-29 2021-05-04 厦门大学 Radioactive three-dimensional nanostructure photovoltaic electrochemical cell
CN112750548B (en) * 2021-01-29 2024-02-20 厦门大学 Radioactive three-dimensional nanostructure spoke volt electrochemical cell
RU2813551C1 (en) * 2022-12-27 2024-02-13 Федеральное государственное бюджетное образовательное учреждение высшего образования "Московский государственный университет имени М.В. Ломоносова" (МГУ) Method for producing highly tritium-labelled graphene oxide

Similar Documents

Publication Publication Date Title
CN107767983A (en) A kind of tritium based nanotube isotope battery
Sawicka-Chudy et al. Simulation of TiO2/CuO solar cells with SCAPS-1D software
Zhang et al. Conjugated polymer–silicon nanowire array hybrid Schottky diode for solar cell application
CN107680705A (en) A kind of isotope battery of the wide forbidden region semi-conductor nano tube/linear of ordered arrangement
Ren et al. Direct utilization of photoinduced charge carriers to promote electrochemical energy storage
Luo et al. Electrochemically deposited Cu2O on TiO2 nanorod arrays for photovoltaic application
CN104200864B (en) Isotope battery based on wide bandgap semiconductor nano-tube array film structure
Wang et al. A Renewable Light‐Promoted Flexible Li‐CO2 Battery with Ultrahigh Energy Efficiency of 97.9%
US20110049379A1 (en) Neutron detectors made of inorganic materials and their method of fabrication
US20110203650A1 (en) Optical converter device and electronic equipment including the optical converter device
Samanta et al. Role of various transport layer and electrode materials in enhancing performance of stable environment-friendly Cs2TiBr6 solar cell
CN105637651B (en) Solar module
CN103296123A (en) P-type carbon quantum dot/N-type silicon nano-wire array hetero-junction solar cell and method for manufacturing same
CN101694816B (en) Heterojunction and photoelectrochemistry mixed solar cell
CN111446019A (en) Three-dimensional nano-structure tritium photovoltaic battery
CN107210078B (en) Generator system
CN102592696A (en) Interlayer structure nuclear battery based on liquid semiconductor and preparation method thereof
CN107945901B (en) Quantum dot beta volt battery
CN207611620U (en) A kind of quantum dot beta voltaic element
JP2015162529A (en) Solar cell
CN104485421B (en) Perovskite/nanowire hybrid solar cell and preparation method thereof
CN108493344A (en) Shell-and-core structure perovskite nano-wire array solar cell
CN101908387A (en) Radiation source carbon nanotube battery device
CN101262019B (en) Photoelectrical chemical solar battery for silicon nano line
WO2019113842A1 (en) Quantum dot betavoltaic battery

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20180306

RJ01 Rejection of invention patent application after publication