CN206148450U - A avalanche diode for photoelectric conversion module - Google Patents
A avalanche diode for photoelectric conversion module Download PDFInfo
- Publication number
- CN206148450U CN206148450U CN201621191218.0U CN201621191218U CN206148450U CN 206148450 U CN206148450 U CN 206148450U CN 201621191218 U CN201621191218 U CN 201621191218U CN 206148450 U CN206148450 U CN 206148450U
- Authority
- CN
- China
- Prior art keywords
- layer
- type silicon
- photoelectric conversion
- conversion module
- housing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Light Receiving Elements (AREA)
Abstract
The utility model discloses an avalanche diode for photoelectric conversion module, which comprises a housin, the upper surface of casing is opened flutedly, anode lead and cathode lead wire have been drawn forth to the bottom of casing, anode lead and cathode lead wire's one end is connected with the welding post, the both sides of casing are equipped with welding stent, welding stent's surface is equipped with the round hole, the inside passive film that is equipped with of casing, the upper end of passive film is equipped with P type silicon base layer, P type silicon base layer's below is equipped with the absorbed layer, the below of absorbed layer is equipped with the gain layer, the below of gain layer is equipped with N type silicon base layer, form the bonded boundary layer between P type silicon base layer and the N type silicon base layer, this utility model reasonable in design, simple structure, the characteristics such as installation, response height, SNR height of being convenient for are worth wideling popularize.
Description
Technical field
This utility model belongs to photoelectric conversion material technical field, and in particular to a kind of snowslide for photoelectric conversion module
Diode.
Background technology
In advanced information society, a kind of just most quick media of transmission information, and photoelectric sensor is examined as optical information
Critical component in examining system, with optical-fibre communications, laser ranging, guidance technology, remote measurement remote sensing and the high-tech such as automatically controls
The development of technology, increases rapidly to the demand of highly sensitive photoelectric sensor.Avalanche photodide because its quantum efficiency is high,
Low in energy consumption, luminous sensitivity is strong, frequency spectrums of operation scope is big, small volume, relatively low running voltage the advantages of, made it with most
The ideal chose of good sensitivity photosensors part, starts to replace original photomultiplier tube gradually to be favored by researcher.
At present avalanche photodide is widely used in the high-tech such as optical-fibre communications, laser ranging, single photon detection, guidance technology neck
Domain.Because avalanche photodide is in the critical role of high-tech sector, it has become each developed country's photoelectron educational circles weight
One of problem of point research.Therefore, invent a kind of avalanche diode for photoelectric conversion module have very much to solve the above problems
It is necessary.
Utility model content
The purpose of this utility model is to provide a kind of avalanche diode for photoelectric conversion module, to solve the above-mentioned back of the body
The problem proposed in scape technology.
For achieving the above object, this utility model provides following technical scheme：A kind of snowslide for photoelectric conversion module
Diode, including housing, the upper surface of the housing is provided with groove, and the bottom of the housing leads to anode tap and negative electrode draws
One end of line, the anode tap and cathode leg is connected with welded post, and the both sides of the housing are provided with welding support, the weldering
The surface for connecing support is provided with circular hole, and the enclosure interior is provided with passivating film, and the upper end of the passivating film is provided with P-type silicon basic unit, institute
State and absorbed layer is provided with below P-type silicon basic unit, gain layer is provided with below the absorbed layer, below the gain layer N is provided with
Type silicon base layer, between the P-type silicon basic unit and N-type silicon base layer bonding interface layer is formed.
Preferably, the bonding interface layer is low-temperature wafer bonding.
Preferably, the welding support and circular hole are set to two groups.
Preferably, the upper end of the passivating film is provided with photosensitive layer.
Preferably, graphite radiating layer is provided between the housing and passivating film.
Technique effect of the present utility model and advantage：This is used for the avalanche diode of photoelectric conversion module, by InP/Si
The setting of bonding interface layer so as to the features such as with high-responsivity, high s/n ratio, it is convenient to produce by the setting of welding support
The fixed installation of product, by the setting of graphite radiating layer, improves the radiating efficiency of diode, reduces damage of product rate, should
Utility model is reasonable in design, simple structure, be easily installed, the features such as responsiveness is high, signal to noise ratio is high, be worth promoting.
Description of the drawings
Fig. 1 is structural representation of the present utility model；
Fig. 2 is internal structure schematic diagram of the present utility model；
Fig. 3 is graphite radiating Rotating fields schematic diagram of the present utility model.
In figure：1 housing, 2 anode taps, 3 cathode legs, 4 welding supports, 5 absorbed layers, 6 gain layers, 7 bonding interface layers,
8 P-type silicon basic units, 9 N-type silicon base layers, 10 grooves, 11 welded posts, 12 circular holes, 13 passivating films, 14 photosensitive layers, 15 graphite radiatings
Layer.
Specific embodiment
Below in conjunction with the accompanying drawing in this utility model embodiment, the technical scheme in this utility model embodiment is carried out
Clearly and completely describe, it is clear that described embodiment is only a part of embodiment of this utility model, rather than whole
Embodiment.Based on the embodiment in this utility model, those of ordinary skill in the art are not under the premise of creative work is made
The every other embodiment for being obtained, belongs to the scope of this utility model protection.
This utility model provides a kind of avalanche diode for photoelectric conversion module as Figure 1-3, including shell
Body 1, the upper surface of the housing 1 is provided with groove 10, and the bottom of the housing 1 leads to anode tap 2 and cathode leg 3, institute
The one end for stating anode tap 2 and cathode leg 3 is connected with welded post 11, and the both sides of the housing 1 are provided with welding support 4, described
The surface of welding support 4 is provided with circular hole 12, and passivating film 13 is provided with inside the housing 1, and the upper end of the passivating film 13 is provided with p-type
Silicon base layer 8, the lower section of the P-type silicon basic unit 8 is provided with absorbed layer 5, and the lower section of the absorbed layer 5 is provided with gain layer 6, the gain
The lower section of layer 6 is provided with N-type silicon base layer 9, and bonding interface layer 7 is formed between the P-type silicon basic unit 8 and N-type silicon base layer 9.
Further, the bonding interface layer 7 is low-temperature wafer bonding.
Further, the welding support 4 and circular hole 12 are set to two groups.
Further, the upper end of the passivating film 13 is provided with photosensitive layer 14.
Further, graphite radiating layer 15 is provided between the housing 1 and passivating film 13.
Operation principle：When using, passivating film 13 is provided with inside housing 1, the upper end of passivating film 13 is provided with P-type silicon basic unit 8, P
The lower section of type silicon base layer 8 is connected with absorbed layer 5, the lower section of absorbed layer 5 is provided with gain layer 6, and gain layer 6 is connected with N-type silicon substrate
Layer 9, forms bonding interface layer 7 between P-type silicon basic unit 8 and N-type silicon base layer 9, improve the spies such as responsiveness, the signal to noise ratio of product
Point, the outside of passivating film 13 is provided with the convenient radiating of graphite radiating layer 15, is fixed product by the way that welding support 4 is convenient, should
Utility model is reasonable in design, simple structure, be easily installed, the features such as responsiveness is high, signal to noise ratio is high, be worth promoting.
Finally it should be noted that：Preferred embodiment of the present utility model is the foregoing is only, this is not limited to
Utility model, although being described in detail to this utility model with reference to the foregoing embodiments, for those skilled in the art
For, it still can modify to the technical scheme described in foregoing embodiments, or to which part technical characteristic
Equivalent is carried out, all within spirit of the present utility model and principle, any modification, equivalent substitution and improvements made etc.,
Should be included within protection domain of the present utility model.
Claims (5)
1. a kind of avalanche diode for photoelectric conversion module, including housing（1）, it is characterised in that：The housing（1）It is upper
Surface is provided with groove（10）, the housing（1）Bottom lead to anode tap（2）And cathode leg（3）, the anode tap
（2）And cathode leg（3）One end be connected with welded post（11）, the housing（1）Both sides be provided with welding support（4）, it is described
Welding support（4）Surface be provided with circular hole（12）, the housing（1）Inside is provided with passivating film（13）, the passivating film（13）'s
Upper end is provided with P-type silicon basic unit（8）, the P-type silicon basic unit（8）Lower section be provided with absorbed layer（5）, the absorbed layer（5）Lower section
It is provided with gain layer（6）, the gain layer（6）Lower section be provided with N-type silicon base layer（9）, the P-type silicon basic unit（8）With N-type silicon base layer
（9）Between form bonding interface layer（7）.
2. a kind of avalanche diode for photoelectric conversion module according to claim 1, it is characterised in that：The bonding
Boundary layer（7）For low-temperature wafer bonding.
3. a kind of avalanche diode for photoelectric conversion module according to claim 1, it is characterised in that：The welding
Support（4）And circular hole（12）It is set to two groups.
4. a kind of avalanche diode for photoelectric conversion module according to claim 1, it is characterised in that：The passivation
Film（13）Upper end be provided with photosensitive layer（14）.
5. a kind of avalanche diode for photoelectric conversion module according to claim 1, it is characterised in that：The housing
（1）With passivating film（13）Between be provided with graphite radiating layer（15）.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621191218.0U CN206148450U (en) | 2016-11-05 | 2016-11-05 | A avalanche diode for photoelectric conversion module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621191218.0U CN206148450U (en) | 2016-11-05 | 2016-11-05 | A avalanche diode for photoelectric conversion module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206148450U true CN206148450U (en) | 2017-05-03 |
Family
ID=58625249
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621191218.0U Active CN206148450U (en) | 2016-11-05 | 2016-11-05 | A avalanche diode for photoelectric conversion module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206148450U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110719419A (en) * | 2018-07-12 | 2020-01-21 | 佳能株式会社 | Image sensor and image pickup apparatus |
-
2016
- 2016-11-05 CN CN201621191218.0U patent/CN206148450U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110719419A (en) * | 2018-07-12 | 2020-01-21 | 佳能株式会社 | Image sensor and image pickup apparatus |
| CN110719419B (en) * | 2018-07-12 | 2022-09-16 | 佳能株式会社 | Image sensor and image pickup apparatus |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107221441B (en) | A kind of solar battery based on composite nanostructure light anode | |
| CN102856422B (en) | Self-energized ultraviolet light detector | |
| CN107195787A (en) | Self-driven photodetector based on Graphene electrodes and perovskite light-absorption layer and preparation method thereof | |
| CN106531822A (en) | Photoelectric detector | |
| CN107634090A (en) | Two-dimentional black phosphorus PN junction, its preparation method and application | |
| CN106684201B (en) | A kind of zinc oxide nano rod/black silicon heterogenous nano photodetectors and preparation method thereof | |
| CN206148450U (en) | A avalanche diode for photoelectric conversion module | |
| CN101694816B (en) | Heterojunction and photoelectrochemistry mixed solar cell | |
| CN105280750A (en) | Photosensing device and photosensing module | |
| CN106847987B (en) | CIGS superelevation, ultrafast wide wavestrip optical position sensitive detector | |
| CN209626234U (en) | A kind of high-performance vacuum ultraviolet photodetector | |
| CN101922927A (en) | Dual-coordinate high-precision sun tracing sensor | |
| CN208315578U (en) | A kind of Si base double-side solar cell structure with local emitter characteristic | |
| CN106876513B (en) | It is a kind of equal from the lateral heterogeneous integrated solar cell of polariton | |
| CN204118079U (en) | A kind of photoelectric sensor | |
| CN105103430A (en) | Natural heat energy conversion and storage device | |
| CN204946901U (en) | A kind of photoelectric acquisition sensor with Si bipolar process compatibility | |
| CN206639804U (en) | Punch PERC double-sided solar batteries and its component, system | |
| CN1773712A (en) | CMOS silicon double-photoelectric detector | |
| CN207038534U (en) | A kind of solar cell | |
| CN201867374U (en) | Electronic pen device for gold marking test strip semi-quantitative fast detection | |
| CN204946900U (en) | A kind of photoelectric detective circuit based on double-photoelectric detector | |
| CN206864482U (en) | A kind of high efficiency solar cell | |
| CN203631559U (en) | Bipolar NPN transistor | |
| RU197989U1 (en) | Photoresistor based on a composite material consisting of a polymer of poly (3-hexylthiophene) and p-type silicon nanoparticles |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |