CN102496399B - Samarium isotope minisize cell and manufacturing method thereof - Google Patents
Samarium isotope minisize cell and manufacturing method thereof Download PDFInfo
- Publication number
- CN102496399B CN102496399B CN201110426036.2A CN201110426036A CN102496399B CN 102496399 B CN102496399 B CN 102496399B CN 201110426036 A CN201110426036 A CN 201110426036A CN 102496399 B CN102496399 B CN 102496399B
- Authority
- CN
- China
- Prior art keywords
- layer
- junction
- gold
- samarium
- silica
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Abstract
The invention discloses a samarium isotope minisize cell and a manufacturing method thereof. The cell is formed by a transduction unit and an appurtenance. The transduction unit comprises: samarium-151 radioactive source sheet, a Si3N4 layer and a silicon-based PN junction. The appurtenance comprises: an outer encapsulation layer, a ring electrode, a positive lead, a positive electrode, a gold layer, a pedestal, a negative electrode, a negative lead, a ceramic chip and an inner encapsulation layer. The Si3N4 layer is located on an upper surface of the silicon-based PN junction. The ring electrode is on an epitaxy of the Si3N4 layer. The samarium-151 radioactive source sheet is fixed on the upper surface of the Si3N4 layer by using the inner encapsulation layer. A lower surface of the silicon-based PN junction is the gold layer. One end of the negative lead is connected with the gold layer and the other end is connected with the negative electrode. One end of the positive lead is connected with the ring electrode and the other end is connected with the positive electrode. The ceramic chip is located below the gold layer. The ceramic chip is located on the very center of the pedestal. The outer encapsulation layer covers the outside of the pedestal. The samarium isotope minisize cell of the invention has a small size and can work without energy provided from the outside. The cell can continuously output a 100nA-muA current and 0.1muA-1muA for more than 45 years. The manufacturing method of the invention is safe and reliable.
Description
Technical field
The invention belongs to micro isotope battery field, be specifically related to a kind of samarium isotope minicell and preparation method thereof.
Background technology
Radioactive isotope is in decay process, and meeting is emitted particle (as α, β, γ particle etc.) spontaneously, and these particles contain certain energy, and this is just decay energy.Isotope battery is exactly that this decay can be transformed into a kind of power supply device of electric energy directly or indirectly.
Up to the present the mechanism that isotope battery can convert decay to electric energy developed into more than 10 kinds.But making aspect minicell, the isotope batteries of a lot of mechanism all cannot take into account that battery size is little, the life-span long, the requirement of non-maintaining this three aspects:.Since the later stage nineties in last century, MEMS/NEMS etc. micro-/receive under the traction of system airborne power supply demand, the fast development of simultaneous Application of Isotopic Tech in Biology and micro-nano process technology, the research of radioactive isotope minicell receives unprecedented concern, a large amount of research concentrates on the critical component in isotope microcell structure---and in the improvement of transducing unit, increasing research institution starts to attempt the not design and fabrication of the isotope microcell of isomorphism type, different semiconductor material and different switching mechanism both at home and abroad.The object of these trials is in order to increase the utilization factor of radioisotopic effective heap(ed) capacity, ray and the Antiradiation injury ability that strengthens semiconductor material nothing more than, thereby promotes the overall performance of isotope microcell.In name, be called " energy conversion of three-dimensional macropore silica-based become a partner spoke volt effect and photovoltaic effect " (J.P.Clarkson etc., Phys.Stat.Sol[a], 5, 204, 2007) document, name is called " 4H silit spoke volt battery is resolved " (M.V.S.Chandrasheklar etc., Applied physics letters, 88, 033506, 2006) in document, the isotope battery that generally approval adopts radiation volta effect and Schottky effect to make can reach realistic scale, in other words, based on these two kinds of machine-processed isotope microcells, can take into account battery external form microminiaturized, change serviceable life for a long time, non-maintaining this three aspects: advantage of use procedure.The isotope microcell of particularly making based on radiation volta effect, in the U.S., there is product tentatively to come out, in name, be called " the three-dimensional junction type spoke volt of miniature tritiate battery " (Larry L, IAEA Workshop Advanced Sensors for Safeguards, 23-27, April2007) in report, show, its embodiment is that radioactive isotope tritium is loaded on the silica-based PN junction of three-dimensional micropore (aperture less than 2 μ m), has realized about 50 μ W/cm
3output.But this tritium isotope microcell all cannot successfully made at present even in recent years at home, difficult point is the domestic micro-working ability of making three-dimensional micropore energy transducer that still do not possess.In other words, domestic wish independent development success radiation volta effect isotope microcell, can only base oneself upon on the basis of plane transducing unit, and emphasis is solved from radioisotopic choosing with effective heap(ed) capacity.
At present, the research for radiation volta effect isotope microcell on plane transducing unit mainly concentrates on low energy radioactive isotope
3h and
63ni is as on drive source, and resulting isotope microcell ubiquity output power too little (being less than 10nW), short-circuit current too low (a few nA～1 μ A) are relatively remote in application prospect.Samarium-151 that belong to equally pure Beta nucleic, the electron energy (wherein, 99.12% electronics average energy is 19.68keV) of launching while not only also thering is long half time (90 years), decay ratio
3h and
63the height of Ni (
3h is 5.69keV,
63ni is 17.13keV), this electron energy is not only safe (that is, can not cause radiation damage) to silicon-based semiconductor material, and, can in the PN junction of transducing unit, inspire more electron-hole pair under the same conditions, thereby produce better electric output performance.
Summary of the invention
In order to overcome in prior art
3h or
63the deficiency that Ni isotope microcell output power is too little, short-circuit current is too low, the invention provides a kind of samarium isotope minicell and preparation method thereof.
The technical solution adopted for the present invention to solve the technical problems is: a kind of samarium isotope minicell is provided, samarium isotope minicell its preparation method is provided simultaneously.
Samarium isotope minicell of the present invention, is characterized in, described minicell contains transducing unit and appurtenances, and transducing unit comprises samarium-151 radioactive source sheet, Si
3n
4layer, silica-based PN junction; Appurtenances comprise outer package layer, ring electrode, just lead-in wire, positive electrode, gold layer, base, negative electrode, bear lead-in wire, potsherd, interior encapsulated layer; Its annexation is, Si
3n
4layer is positioned at silica-based PN junction upper surface; Ring electrode is at Si
3n
4the extension of layer; Samarium-151 radioactive source sheet is fixed on Si by interior encapsulated layer
3n
4layer upper surface; The lower surface of silica-based PN junction is gold layer, and it is upper that one end of negative lead-in wire is connected to gold layer, and the other end is connected on negative electrode; The one end just going between is connected on ring electrode, and the other end is connected on positive electrode; The below of gold layer is potsherd; Potsherd is positioned at base centre; Outer package layer covers base exterior.
The preparation method of samarium isotope minicell of the present invention, comprises the steps:
A) selecting doping content is 1 * 10
15～1 * 10
17cm
-3, thickness is that the n type single crystal silicon of 100～300 μ m is substrate, in upper surface thermal diffusion one deck doping content of this substrate, is 1 * 10
18～1 * 10
20cm
-3, thickness is the p type single crystal silicon layer of 0.3～2.0 μ m, then the lower surface thermal diffusion one deck doping content at this substrate is 1 * 10
19～1 * 10
20cm
-3, thickness is the N of 0.5～2.0 μ m
+type monocrystalline silicon layer, is prepared into silica-based PN junction thus;
B) upper surface at silica-based PN junction by vapour deposition process deposit a layer thickness is
si
3n
4layer;
C) at Si
3n
4layer material of extension evaporation be gold, ring width 200～500 μ m, encircle high
ring electrode;
D) the lower surface evaporation a layer thickness at silica-based PN junction is
gold layer;
E) with insulating gel, potsherd is fixed on to the middle of base upper surface;
F) using gold thread as negative lead-in wire, one end sticks with glue agent, and to be fixed on the gold layer of silica-based PN junction below upper, and the other end is welded on the negative electrode of base by ultrasonic spot welding method;
G) sticking with glue agent has the silica-based PN junction of gold layer and negative lead-in wire to be fixed on the middle of potsherd carrier band;
H) using gold thread as just going between, by ultrasound wave electric welding method, one end is welded on ring electrode, the other end is welded on positive electrode;
I) solder joint in above-mentioned steps g and h is put respectively a powerful conducting resinl;
J) by the active face of samarium-151 radioactive source sheet towards Si
3n
4layer, and by Si
3n
4layer covers completely, then adopts die perfusion method that vinyldimethicone compound substance is poured onto in the internal cavity of this battery, and place more than 12 hours curing molding under room temperature, encapsulated layer in forming;
K) outer package layer of FeNi kovar alloy material is covered to base exterior, at interface, with fluid sealant, fix.
In above preparation process, silica-based PN junction is growing P-type monocrystalline silicon in N-type doped single crystal silicon base, and at this N-type doped monocrystalline silicon backside of substrate heavy doping phosphorus as N
+heavily doped layer is made.In order to obtain the Ohmic contact between PN junction and electrode, at the back side of PN junction evaporation layer of gold, then one end of negative lead-in wire is welded on to Jin Mianshang, the other end is welded on the negative electrode of base.The upper surface of silica-based PN junction has deposited one deck Si
3n
4thin layer, the ring electrode of spun gold material is deposited on Si
3n
4thin layer outer, thus Ohmic contact formed.The one end just going between is welded on ring electrode, and the other end is welded on the positive electrode of base.Wherein, Si
3n
4the effect of layer is to reduce compound on surface of electronics or hole, with guarantee electronics successively by ring electrode, just go between, positive electrode transporting is in output loop.In addition, back side evaporation has the silica-based PN junction of gold layer to be fixed on potsherd by tackifier, and this potsherd plays PN junction and the effect that base insulate, avoid battery from short circuit.Interior encapsulated layer adopts radiation-resistant compound substance, waters in the space being filled between transducing unit and appurtenances by die perfusion method, plays the fixedly effect of samarium-151 radioactive source sheet on the one hand, has both radiation proof effect simultaneously.Outer package layer is made of FeNi kovar alloy, plays a part to strengthen battery strength.Whole battery is from the appearance the coin shape with two electrodes.
The principle of the technical solution used in the present invention institute foundation is: ray incides in transducing unit, the electronics of vitalizing semiconductor material lattice atom, impel electronics to transit to conduction band from valence band, produce electron-hole pair, then on the basis of this ionisation effect, utilize the built in field in interface to realize the separated of electronics and hole, and utilize the Ohmic contact of interface and two end electrodes that electronics is drawn, generation current when connecting external circuit.In like manner, the present invention mentions a kind of samarium isotope minicell and realizes the process of electricity output and can be described as successively four steps---and the PN junction of inside battery is because the result of difference doping has built in field; Samarium isotope transmitting containing can electron impact on PN junction and excite the electron ionization of lattice atoms to produce electron-hole pair; Electron-hole pair moves to the two ends of knot respectively under the effect of interface built in field; The electrode Ohmic contact at PN junction and two ends, the in the situation that of external load, electrode by mobile electronic conduction of coming out, thereby in loop, form the output of electric current and power.During 300K, it is 0.155MeV～0.221MeV that monocrystalline silicon starts to produce the required electronic kinetic energy of discomposition effect, therefore, adopt samarium-151 as the drive source of transducing unit in the present invention, the electronics that its decay is radiated can not make to produce in Semiconducting Silicon Materials lattice atoms displacement effect.And the half life period of samarium-151 is 90 years, can meet the requirement of making long-life batteries completely.
Samarium isotope of the present invention for minicell samarium-151 radioactive source as the drive source of battery transducing unit, can compare
3h,
63ni produces more electron-hole pair, thereby has better electric output performance.Samarium isotope minicell build of the present invention is small, do not need the external world that energy is provided during work, can realize electric current 100nA～μ A, power 0.1 μ W～1 μ W, output incessantly above in 45 years.Preparation method of the present invention is safe and reliable.
Accompanying drawing explanation
Fig. 1 is the structural representation of a kind of samarium isotope minicell of the present invention;
In figure, 1. outer package layer, 2. ring electrode, 3. just goes between, 4. positive electrode, 5. gold layer, 6. base, 7. radioactive source sheet, 8.Si
3n
4layer, 9. silica-based PN junction, 10. negative electrode, 11. negative lead-in wires, 12. potsherds, 13. interior encapsulated layers.
Embodiment
Below in conjunction with accompanying drawing, content of the present invention is further illustrated.
Fig. 1 is a kind of samarium isotope minicell of the present invention structural representation.In Fig. 1, samarium isotope minicell of the present invention contains transducing unit and appurtenances, and described transducing unit comprises samarium-151 radioactive source sheet 7, Si
3n
4layer 8, silica-based PN junction 9; Appurtenances comprise outer package layer 1, ring electrode 2, just go between 3, positive electrode 4, gold layer 5, base 6, negative electrode 10, negative lead-in wire 11, potsherd 12, interior encapsulated layer 13; Its annexation is, Si
3n
4layer 8 is positioned at silica-based PN junction 9 upper surfaces; Ring electrode 2 is at Si
3n
4the extension of layer 8; Samarium-151 radioactive source sheet 7 is fixed on Si by interior encapsulated layer 13
3n
4layer 8 upper surface; The lower surface of silica-based PN junction 9 is gold layers 5, and one end of negative lead-in wire 11 is connected on gold layer 5, and the other end is connected on negative electrode 10; Just going between one end of 3 is connected on ring electrode 2, and the other end is connected on positive electrode 4; The below of gold layer 5 is potsherds 12; Potsherd 12 is positioned at base 6 centres; Outer package layer 1 covers base 6 outsides.
Its preparation process of samarium isotope minicell of the present invention is as follows:
A) selecting doping content is 1 * 10
15～1 * 10
17cm
-3, thickness is that the n type single crystal silicon of 100～300 μ m is substrate, in upper surface thermal diffusion one deck doping content of this substrate, is 1 * 10
18～1 * 10
20cm
-3, thickness is the p type single crystal silicon layer of 0.3～2.0 μ m, then the lower surface thermal diffusion one deck doping content at this substrate is 1 * 10
19～1 * 10
20cm
-3, thickness is the N of 0.5～2.0 μ m
+type monocrystalline silicon layer, is prepared into silica-based PN junction 9 thus;
B) upper surface at silica-based PN junction 9 by vapour deposition process deposit a layer thickness is
si
3n
4layer 8;
C) at Si
3n
4layer material of extension evaporation of 8 be gold, ring width 200～500 μ m, it is high to encircle
ring electrode 2;
D) the lower surface evaporation a layer thickness at silica-based PN junction 9 is
gold layer 5;
E) with insulating gel, potsherd 12 is fixed on to the middle of base 6 upper surfaces;
F) using gold thread as negative lead-in wire 11, one end sticks with glue agent and is fixed on gold layer 5, and the other end is welded on the negative electrode 10 of base 6 by ultrasonic spot welding method;
G) sticking with glue agent has the silica-based PN junction 9 of gold layer 5 and negative lead-in wire 11 to be fixed on the middle of potsherd 12 carrier band;
H) using gold thread as just going between 3, by ultrasound wave electric welding method, one end is welded on ring electrode 2, the other end is welded on positive electrode 4;
I) solder joint in above-mentioned steps g and h is put respectively a powerful conducting resinl;
J) by the active face of samarium-151 radioactive source sheet 7 towards Si
3n
4layer 8, and by Si
3n
4layer 8 covers completely, then adopts die perfusion method that vinyldimethicone compound substance is poured onto in the internal cavity of this battery, and place more than 12 hours curing molding under room temperature, encapsulated layer 13 in forming;
K) outer package layer 1 of FeNi kovar alloy material is covered to base 6 outsides, at interface, with fluid sealant, fix.
Claims (2)
1. a samarium isotope minicell, is characterized in that: described minicell contains transducing unit and appurtenances, and transducing unit comprises samarium-151 radioactive source sheets (7), Si
3n
4layer (8), silica-based PN junction (9); Appurtenances comprise outer package layer (1), ring electrode (2), just go between (3), positive electrode (4), gold layer (5), base (6), negative electrode (10), negative lead-in wire (11), potsherd (12), interior encapsulated layer (13); Its annexation is, Si
3n
4layer (8) is positioned at silica-based PN junction (9) upper surface; Ring electrode (2) is at Si
3n
4the extension of layer (8); Samarium-151 radioactive source sheets (7) are fixed on Si by interior encapsulated layer (13)
3n
4layer (8) upper surface; The lower surface of silica-based PN junction (9) is gold layer (5), and it is upper that one end of negative lead-in wire (11) is connected to gold layer (5), and the other end is connected on negative electrode (10); Just going between, to be connected to ring electrode (2) upper for the one end of (3), and the other end is connected on positive electrode (4); The below of gold layer (5) is potsherd (12); Potsherd (12) is positioned at base (6) centre; Outer package layer (1) covers base (6) outside.
2. a preparation method for samarium isotope minicell, comprises the steps:
A) selecting doping content is 1 * 10
15～1 * 10
17cm
-3, thickness is that the n type single crystal silicon of 100～300 μ m is substrate, in upper surface thermal diffusion one deck doping content of this substrate, is 1 * 10
18～1 * 10
20cm
-3, thickness is the p type single crystal silicon layer of 0.3～2.0 μ m, then the lower surface thermal diffusion one deck doping content at this substrate is 1 * 10
19～1 * 10
20cm
-3, thickness is the N of 0.5～2.0 μ m
+type monocrystalline silicon layer, is prepared into silica-based PN junction (9) thus;
B) Si that is 200～500 at the upper surface of silica-based PN junction (9) by vapour deposition process deposit a layer thickness
3n
4layer (8);
C) at Si
3n
4material of extension evaporation of layer (8) is gold, ring width 200～500 μ m, encircles high 400～800 ring electrode (2);
D) the lower surface evaporation a layer thickness at silica-based PN junction (9) is 200～500 gold medal layers (5);
E) with insulating gel, potsherd (12) is fixed on to the middle of base (6) upper surface;
F) using gold thread as negative lead-in wire (11), one end sticks with glue agent, and to be fixed on the gold layer (5) of silica-based PN junction (9) below upper, and the other end is welded on the negative electrode (10) of base (6) by ultrasonic spot welding method;
G) sticking with glue agent has the silica-based PN junction (9) of gold layer (5) and negative lead-in wire (11) to be fixed on the middle of potsherd (12) carrier band;
H) using gold thread as just go between (3), by ultrasound wave electric welding method, one end is welded on to ring electrode (2) upper, the other end is welded on positive electrode (4);
I) solder joint in above-mentioned steps g and h is put respectively a powerful conducting resinl;
J) by the active face of samarium-151 radioactive source sheets (7) towards Si
3n
4layer (8), and by Si
3n
4layer (8) covers completely, then adopts die perfusion method that vinyldimethicone compound substance is poured onto in the internal cavity of this battery, and place more than 12 hours curing molding under room temperature, encapsulated layer (13) in forming;
K) outer package layer of FeNi kovar alloy material (1) is covered to base (6) outside, at interface, with fluid sealant, fix.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110426036.2A CN102496399B (en) | 2011-12-19 | 2011-12-19 | Samarium isotope minisize cell and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110426036.2A CN102496399B (en) | 2011-12-19 | 2011-12-19 | Samarium isotope minisize cell and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102496399A CN102496399A (en) | 2012-06-13 |
| CN102496399B true CN102496399B (en) | 2014-02-26 |
Family
ID=46188213
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110426036.2A Expired - Fee Related CN102496399B (en) | 2011-12-19 | 2011-12-19 | Samarium isotope minisize cell and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102496399B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6753469B1 (en) * | 2002-08-05 | 2004-06-22 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Very high efficiency, miniaturized, long-lived alpha particle power source using diamond devices for extreme space environments |
| WO2008051216A2 (en) * | 2005-10-25 | 2008-05-02 | The Curators Of The University Of Missouri | Micro-scale power source |
| CN101320601A (en) * | 2008-06-18 | 2008-12-10 | 西北工业大学 | Silicon carbide Schottky junction type nuclear cell and preparation thereof |
| CN101527175A (en) * | 2009-04-10 | 2009-09-09 | 苏州纳米技术与纳米仿生研究所 | PIN type nuclear battery and preparation method thereof |
| CN101599308A (en) * | 2009-06-30 | 2009-12-09 | 西北工业大学 | Has minisize nuclear battery of protection ring structure and preparation method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003263996A (en) * | 2002-03-11 | 2003-09-19 | Mitsubishi Materials Corp | Solid oxide fuel cell |
-
2011
- 2011-12-19 CN CN201110426036.2A patent/CN102496399B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6753469B1 (en) * | 2002-08-05 | 2004-06-22 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Very high efficiency, miniaturized, long-lived alpha particle power source using diamond devices for extreme space environments |
| WO2008051216A2 (en) * | 2005-10-25 | 2008-05-02 | The Curators Of The University Of Missouri | Micro-scale power source |
| CN101320601A (en) * | 2008-06-18 | 2008-12-10 | 西北工业大学 | Silicon carbide Schottky junction type nuclear cell and preparation thereof |
| CN101527175A (en) * | 2009-04-10 | 2009-09-09 | 苏州纳米技术与纳米仿生研究所 | PIN type nuclear battery and preparation method thereof |
| CN101599308A (en) * | 2009-06-30 | 2009-12-09 | 西北工业大学 | Has minisize nuclear battery of protection ring structure and preparation method thereof |
Non-Patent Citations (3)
| Title |
|---|
| JP特开2003-263996A 2003.09.19 |
| 一种新型铅钐锡正极板栅合金;周彦葆 等;《高等学校化学学报》;20030930;第24卷(第9期);1677-1679 * |
| 周彦葆 等.一种新型铅钐锡正极板栅合金.《高等学校化学学报》.2003,第24卷(第9期),1677-1679. |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102496399A (en) | 2012-06-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102446572B (en) | Tritium isotope microcell and preparation method thereof | |
| AU2010224003B2 (en) | High energy-density radioisotope micro power sources | |
| CN104409127B (en) | Composite converting type isotope battery | |
| CN106941017B (en) | A kind of thermion-photoelectricity-thermoelectricity combined type isotope battery and preparation method thereof | |
| CN110444313A (en) | One kind radiating volta effect nuclear battery based on silicon carbide PN junction β | |
| CN102543239B (en) | Three-dimensional heterojunction isotope battery based on carbon nanotube film and preparation method of three-dimensional heterojunction isotope battery | |
| CN103227227A (en) | Light supply collector based on carbon nano tube and discharge circuit | |
| CN107123457B (en) | A kind of direct collection-photoelectricity-thermoelectricity combined type isotope battery and preparation method | |
| CN102592696B (en) | Interlayer structure nuclear battery based on liquid semiconductor and preparation method thereof | |
| CN202549322U (en) | Interlayer structure battery based on liquid semiconductor | |
| CN111446019A (en) | Three-dimensional nano-structure tritium photovoltaic battery | |
| CN108807564A (en) | A kind of radiation photovoltaic isotope battery encapsulating structure | |
| CN110164581A (en) | A kind of plane electrode semiconductive thin film PN junction beta radiation voltaic element | |
| CN102496399B (en) | Samarium isotope minisize cell and manufacturing method thereof | |
| CN102306511B (en) | Composite isotopic battery with high output energy and preparation method thereof | |
| CN106876519A (en) | A kind of alundum (Al2O3) is passivated the two-sided crystal silicon solar batteries preparation method of N-type | |
| CN102610289B (en) | Isotope battery with gallium-nitride-based multi-junction energy conversion unit | |
| WO2004068548A2 (en) | Three dimensional radiation conversion semiconductor devices | |
| CN108538422B (en) | Direct collection-thermionic emission-thermoelectric isotope battery and preparation method thereof | |
| RU2641100C1 (en) | COMPACT BETAVOLTAIC POWER SUPPLY OF LONG USE WITH BETA EMITTER ON BASIS OF RADIOISOTOPE 63 Ni AND METHOD OF OBTAINING IT | |
| CN211150116U (en) | Three-dimensional nano-structure tritium photovoltaic battery | |
| WO2019113842A1 (en) | Quantum dot betavoltaic battery | |
| CN202210532U (en) | Silicon substrate nanostructure photovoltaic-thermoelectricity jointly convertible solar battery | |
| CN108039219A (en) | Direct collection-radiation ionization-photoelectricity-thermoelectricity isotope battery and preparation method thereof | |
| RU2605784C1 (en) | Combined accumulating element of photo- and beta-voltaic on microchannel silicon |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140226 Termination date: 20191219 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |