CN202210532U - Silicon substrate nanostructure photovoltaic-thermoelectricity jointly convertible solar battery - Google Patents
Silicon substrate nanostructure photovoltaic-thermoelectricity jointly convertible solar battery Download PDFInfo
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- CN202210532U CN202210532U CN2011203674455U CN201120367445U CN202210532U CN 202210532 U CN202210532 U CN 202210532U CN 2011203674455 U CN2011203674455 U CN 2011203674455U CN 201120367445 U CN201120367445 U CN 201120367445U CN 202210532 U CN202210532 U CN 202210532U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The utility model discloses a silicon substrate nanostructure photovoltaic-thermoelectricity jointly convertible solar battery, wherein a silicon nanowire array is prepared by adopting the chemical technology of wet etching on the illuminated face of the body silicon layer of a traditional monocrystalline silicon photovoltaic solar battery, and an MIS-SiNWs structure is prepared by adopting the micro-oxidation technology and the electroless plating technology, and an MIS-SiNWs structural layer is formed on the body silicon layer. A silicon micro channel about 150um deep is etched on the bottom surface of the body silicon layer, an aluminum thin film is electroplated on the surface of the body silicon layer and an MCP structural layer is formed on the body silicon layer. A battery cathode is arranged on the MIS-SiNWs structural layer, and a battery anode is arranged on the MCP structural layer. The silicon substrate nanostructure photovoltaic-thermoelectricity jointly convertible solar battery is a novel solar battery in that on the basis of the monocrystalline silicon photovoltaic solar battery structure, through constructing the MIS-SiNWs structure and the MCP structure, the photovoltaic efficiency can be improved, the mid-infrared frequency range of solar spectrum and the thermoelectricity of the upper and lower surfaces of the battery can be comprehensively utilized to generate electricity, the solar energy can be fully utilized to conduct the photovoltaic-thermoelectricity joint conversion, and the output of the electricity can be increased.
Description
Technical field
The utility model relates to a kind of silicon-based nano structure photovoltaic-combined heat and power conversion solar cell, belongs to technical field of new energies.
Background technology
In the solar cell of current volume production, be silica-based more than 95%, the monocrystaline silicon solar cell conversion efficiency is the highest, and technology is also ripe, and under lab the highest conversion efficiency is 24.7%, and the efficient during large-scale production is 15%.Traditional silicon base solar photovoltaic cell can only utilize in the solar spectrum energy greater than short wavelength's frequency range photon of silicon forbidden band 1.12eV, and in the solar spectrum about 53% in infrared frequency range photon be not used.Even high-energy photon; After absorbing, silicon also have only portion of energy to obtain utilizing through photovoltaic effect; That part of energy that surpasses energy gap has also fallen because of being converted into the lattice heat-energy losses, that is to say that the inner heat energy of solar spectrum or solar-energy photo-voltaic cell is not used in the conventional photovoltaic battery structure.
Summary of the invention
In order to address the above problem; The purpose of the utility model is to provide a kind of silicon-based nano structure photovoltaic-combined heat and power conversion solar cell; Be on mono-crystalline silicon solar photovoltaic cell architecture basics; Make up metal-insulator layer-nanometer semiconductor structure on the silicon nanowires through surface above that, hereinafter to be referred as the MIS-SiNWs structure; With make up silicon micro-channel structure at its lower surface, hereinafter to be referred as the MCP structure, can not only improve the photovoltaic efficiency of battery, can also fully utilize in the solar spectrum infrared frequency range and the battery upper and lower surfaces temperature difference simultaneously and carry out heat energy power-generating.It is a kind of novel " photovoltaic-combined heat and power conversion " solar cell.
The technical scheme of the utility model is: silicon-based nano structure photovoltaic-combined heat and power conversion solar cell is to be made up of body silicon layer, MIS-SiNWs structure sheaf, MCP structure sheaf.On the sensitive surface of traditional mono-crystalline silicon solar photovoltaic cell body silicon layer, make silicon nanowire array, and prepare the MIS-SiNWs structure, on the body silicon layer, form the MIS-SiNWs structure sheaf through low-level oxidation and electroless plating techniques through the wet chemical lithographic technique.Dark silicon micro-channel about the bottom surface of body silicon layer etching 150 μ m, and, on the body silicon layer, form the MCP structure sheaf at its surface electrical film of aluminizing.On the MIS-SiNWs structure sheaf, be provided with GND, on the MCP structure sheaf, be provided with anode.
The beneficial effect of the utility model is: because on mono-crystalline silicon solar photovoltaic cell architecture basics; Through making up MIS-SiNWs structure and MCP structure; Improve photovoltaic efficiency and fully utilize infrared frequency range and the generating of battery upper and lower surfaces temperature-difference thermoelectric in the solar spectrum; Can make full use of solar energy and carry out photovoltaic-combined heat and power conversion raising electric energy output, be a kind of novel solar battery.
Description of drawings
Below in conjunction with accompanying drawing and embodiment the utility model is further specified.
Fig. 1 is the perspective view of the utility model.
Fig. 2 is the broken section structure for amplifying sketch map of Fig. 1.
Label among the figure
1, body silicon layer 2, MIS-SiNWs structure sheaf 3, MCP structure sheaf
4, anode 5, GND.
Embodiment
See also Fig. 1, Fig. 2, silicon-based nano structure photovoltaic-combined heat and power conversion solar cell is to be made up of body silicon layer, MIS-SiNWs structure sheaf, MCP structure sheaf.On the sensitive surface of traditional mono-crystalline silicon solar photovoltaic cell body silicon layer 1, make silicon nanowire array, and prepare the MIS-SiNWs structure, on body silicon layer 1, form MIS-SiNWs structure sheaf 2 through low-level oxidation and electroless plating techniques through the wet chemical lithographic technique.Dark silicon micro-channel about the bottom surface of body silicon layer 1 etching 150 μ m, and, on body silicon layer 1, form MCP structure sheaf 3 at its surface electrical film of aluminizing.On MIS-SiNWs structure sheaf 2, be provided with GND 5, on MCP structure sheaf 3, be provided with anode 4.
Operation principle: the utility model " silicon-based nano structure photovoltaic-combined heat and power conversion solar cell " can carry out opto-electronic conversion and thermoelectric conversion simultaneously.When 1. sunlight impinges perpendicularly on this battery upper surface; At first get into MIS-SiNWs structure sheaf 2; At this moment have the opto-electronic conversion effect and take place, its operation principle is identical with the Schottky junction semi-conductor solar cell, but because the nanoscale effect of SiNWs; The more edges of light induced electron are collected with the vertical direction of incident light, have extremely short transport path; Photoelectric photon not taking place can move on and get into the pn tie region, produces photoelectric effect for the second time.This structure is compared the conventional planar solar-energy photo-voltaic cell and aspect photoelectric efficiency, is improved a lot.After this solar cell is fixed the angle installation, because MIS-SiNWs structure sheaf 2 can absorb sun incident light in wideer angular range, so can improve the day accumulated generation amount of solar cell.2. through photoetching and electrochemical production MCP structure sheaf 3 is arranged at the back side of traditional solar-energy photo-voltaic cell in addition, this structure has good conductivity and high resistive properties because of having big depth-to-width ratio and bigger serface.Photo-generated carrier can be constrained on the surface transmission of silicon micro-channel in this structure sheaf, reduced probability compound in body silicon, has further improved the photoelectric efficiency of solar cell.3. there is this structure solar cell to have thermoelectric transfer capability again.The outer surface of MIS-SiNWs structure sheaf 2 and MCP structure sheaf 3 is because of contacting with ambient air, and its surface temperature and ambient temperature are approaching.And behind the sunlight entering inside battery; Have portion of energy behind the high-energy photon generation photoelectron on the one hand and convert heat energy into; There is the infrared frequency range photon of part not produce photoelectric effect on the other hand in the solar spectrum and converts heat energy into and absorbed by body silicon layer 1; Cause body silicon layer 1 to have higher temperature, form the cold temperature difference in intermediate heat two ends, because MIS-SiNWs structure sheaf 2 all has higher thermal resistance with MCP structure sheaf 3; Cause producing temperature gradient on MIS-SiNWs structure sheaf 2 to body silicon layer 1 and MIS-SiNWs structure sheaf 2 to MPC structure sheafs 3 directions, promptly can produce-300 μ V K at MIS-SiNWs structure sheaf 2 to body silicon layer 1 two ends
-1Thermo-electromotive force produces 280 μ V K at MIS-SiNWs structure sheaf 2 to MCP structure sheafs 3 two ends
-1Thermo-electromotive force.Therefore this structure possesses thermoelectric transfer capability.
Claims (1)
1. silicon-based nano structure photovoltaic-combined heat and power conversion solar cell; Be to constitute by body silicon layer, MIS-SiNWs structure sheaf, MCP structure sheaf; It is characterized in that: on the sensitive surface of traditional mono-crystalline silicon solar photovoltaic cell body silicon layer (1), make silicon nanowire array through the wet chemical lithographic technique; And prepare the MIS-SiNWs structure through low-level oxidation and electroless plating techniques, go up at body silicon layer (1) and form MIS-SiNWs structure sheaf (2); Dark silicon micro-channel about the bottom surface etching 150 μ m of body silicon layer (1), and at its surface electrical film of aluminizing is gone up at body silicon layer (1) and to be formed MCP structure sheaf (3); On MIS-SiNWs structure sheaf (2), be provided with GND (5), on MCP structure sheaf (3), be provided with anode (4).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203674455U CN202210532U (en) | 2011-09-30 | 2011-09-30 | Silicon substrate nanostructure photovoltaic-thermoelectricity jointly convertible solar battery |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011203674455U CN202210532U (en) | 2011-09-30 | 2011-09-30 | Silicon substrate nanostructure photovoltaic-thermoelectricity jointly convertible solar battery |
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| CN202210532U true CN202210532U (en) | 2012-05-02 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105023759A (en) * | 2015-08-04 | 2015-11-04 | 齐齐哈尔大学 | Preparation method of highly-ordered platinum/silicon nanowire counter electrode |
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2011
- 2011-09-30 CN CN2011203674455U patent/CN202210532U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105023759A (en) * | 2015-08-04 | 2015-11-04 | 齐齐哈尔大学 | Preparation method of highly-ordered platinum/silicon nanowire counter electrode |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120502 Termination date: 20120930 |