CN103681907B - Photovoltaic nanometer electric generator and manufacture method thereof - Google Patents

Photovoltaic nanometer electric generator and manufacture method thereof Download PDF

Info

Publication number
CN103681907B
CN103681907B CN201310690635.4A CN201310690635A CN103681907B CN 103681907 B CN103681907 B CN 103681907B CN 201310690635 A CN201310690635 A CN 201310690635A CN 103681907 B CN103681907 B CN 103681907B
Authority
CN
China
Prior art keywords
electrode
wire
nano
substrate
photovoltaic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201310690635.4A
Other languages
Chinese (zh)
Other versions
CN103681907A (en
Inventor
符春林
蔡苇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Chongqing University of Science and Technology
Original Assignee
Chongqing University of Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chongqing University of Science and Technology filed Critical Chongqing University of Science and Technology
Priority to CN201310690635.4A priority Critical patent/CN103681907B/en
Publication of CN103681907A publication Critical patent/CN103681907A/en
Application granted granted Critical
Publication of CN103681907B publication Critical patent/CN103681907B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264Inorganic materials
    • H01L31/0296Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035227Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/543Solar cells from Group II-VI materials
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The invention discloses a kind of photovoltaic nanometer electric generator and manufacture method thereof, photovoltaic nanometer electric generator comprises substrate, the first electrode, ferroelectric nano-wire and the second electrode, described first electrode and the second electrode arrange with in described substrate, ferroelectric nano-wire described in cross growth in the described substrate between this first electrode and second electrode.Photovoltaic nanometer electric generator manufacture method, comprise the steps: that a. makes substrate, b. sputter the first electrode and the second electrode, c. wet chemistry method is adopted to produce ferroelectric nano-wire, be transplanted in described substrate 1 by this ferroelectric nano linear array again, these ferroelectric nano-wire two ends are between described first electrode and the second electrode; D. encapsulate, encapsulate after test passes.Employing of the present invention, the nano generator of the sunlight driving of development, not only can power to the nano-device long duration in the fields such as Aero-Space, and contribute to microminiaturization, the nanometer of moving system.

Description

Photovoltaic nanometer electric generator and manufacture method thereof
Technical field
The invention belongs to nano generator technical field, specifically, particularly relate to a kind of photovoltaic nanometer electric generator and manufacture method thereof.
Background technology
As the important high and new technology field that 21st century rises, nanometer technology is just experiencing unprecedented high-speed development period.Complete on basis prepared by a large amount of novel nano-material, the various associated research with the nano-device of specific function is becoming the new motive force of Development of Nano-technology.The microminiaturization of the corresponding energy supplyystem of the small form factor requirements due to system, therefore, in a complicated nanosystems, the energy resource supply of individual devices is vital.Consider from angle that is green, energy-conserving and environment-protective, desirable nanoscale electric supply installation should be do not rely on the external charging energy, nontoxic, do not produce pollution and the system that can power continuously.No matter the nanosystems of this self-supply power source is in biology, medical science, human health, or all has immeasurable value in military affairs, radio communication and wireless sensing etc.2006, mechanical energy was successfully converted to electric energy by georgia ,u.s.a Institute of Technology professor Wang Zhonglin etc. within the scope of nanoscale, develops generator-nano generator minimum in the world.The general principle of this nano generator is: when nano wire is under external force during dynamic tensile, piezoelectricity electromotive force is generated in nano wire, corresponding transient current is in two ends flowing to balance Fermi level, and this nano generator based on piezoelectric effect needs the external world to provide mechanical force.As everyone knows, solar energy is a kind of important regenerative resource, has aboundresources, widely distributed, the clean advantage such as clean.The conversion of solar energy has three kinds of modes: light-heat transfer, light-electricity conversion and light-chemical conversion.Wherein, light-electricity conversion (photovoltaic generation) is most important, the most frequently used mode of solar energy conversion.Photovoltaic effect is utilized to can be made into photovoltaic cell, thus the transform light energy of the sun is become electric energy, the material of current making solar cell is mainly the semiconductors such as Si, CdTe, GaAs, and most widely used general, research the most deep photovoltaic cell material be semiconductor silicon.When energy is mapped to p-n junction higher than the illumination of silicon band gap width, silicon produces electron-hole pair because of absorb photons and is separated by the internal electric field of p-n junction and forms electronics and hole, thus produces photovoltage (stream).But this photovoltaic mechanism determines the limit of Silicon photrouics conversion efficiency, and its photovoltage is lower.Meanwhile, require the very high purity of silicon, cause battery price very high.
Based on more than, invent that energy-conserving and environment-protective, delivery efficiency that a kind of sunlight drives are high, the nano generator of stable performance, not only can power to the nano-device long duration in the fields such as Aero-Space, and contribute to microminiaturization, the nanometer of moving system.
Summary of the invention
The object of the invention is to provide that a kind of energy-conserving and environment-protective, delivery efficiency are high, the photovoltaic nanometer electric generator of stable performance and manufacture method thereof.
For achieving the above object, the invention provides a kind of photovoltaic nanometer electric generator, comprise substrate, the first electrode, ferroelectric nano-wire and the second electrode, its main points are: described first electrode and the second electrode are arranged in described substrate, ferroelectric nano-wire described in cross growth in the described substrate between this first electrode and second electrode.Adopt above structure, because solar energy is a kind of regenerative resource, there is aboundresources, widely distributed, the clean advantage such as clean, therefore the problems such as the miniaturization of photovoltaic generation are also solved while the present invention utilizes solar energy, simultaneously, the present invention can also form series circuit, thus significantly improves photovoltaic performance.And existing nano generator is the nano generator utilizing the piezoelectric effect of semiconductor nanowires to be made into substantially, for collecting the mechanical energy in various source in environment, and be translated into electric energy, its structure is substantially, comprise substrate, first electrode, zinc oxide nano-wire array, polymeric dielectric layer and the second electrode, described first electrode is arranged in substrate, described zinc oxide nano-wire array vertical-growth is on the first electrode layer, described zinc oxide nano-wire array layer is coated with described polymeric dielectric layer, described polymeric dielectric layer is by coated for described zinc oxide nano-wire array, second electrode is arranged on polymeric dielectric layer, described first electrode and the second electrode are the voltage and current output stage of nano generator.This nano generator structure is very thin due to zinc oxide nanowire, therefore there is the deficiencies such as electrode machining difficulty, very easily short circuit, and the present invention can avoid the problems such as electrode machining difficulty, short circuit while effectively utilizing regenerative resource.
Described first electrode and the second electrode lay respectively at the both ends of described ferroelectric nano-wire, so easily can realize series connection, thus significantly improve photovoltaic performance.
A kind of photovoltaic nanometer electric generator manufacture method, is characterized in that comprising the steps:
A. make substrate, substrate silicon is prepared a layer insulating thus obtains substrate;
B. by sputtering or evaporating, the first electrode and the second electrode are placed in substrate, then carry out photoetching according to design, thus obtain satisfactory electrode;
C. adopt wet chemistry method to prepare ferroelectric nano-wire, then be transplanted in described substrate by this ferroelectric nano linear array, these ferroelectric nano-wire two ends are between described first electrode and the second electrode;
D. encapsulate, encapsulate after test passes.
Ferroelectric is then a kind of novel photovoltaic cell material, it has unusual photovoltage (APV) effect: evenly the phenomenon of steady-state short-circuit photogenerated current or open circuit voltage appears in ferroelectric crystal under uniform illumination, its distinguishing feature is: photovoltaic voltage is not subject to the restriction of crystal energy gap (Eg), high 2-4 orders of magnitude of comparable Eg.Therefore, the photoelectric conversion efficiency of this kind of material may be very high.Ferroelectric photovoltaic material filming, and achieve many valuable results of study.But with regard to practical application, ferroelectric nano-wire is more suitable for making photovoltaic material than ferroelectric thin film, and main reason is: (1), as monodimension nanometer material, nano wire is more conducive to the miniaturization, integrated of device than film.(2) nano wire single crystallization easier in film, thus improve photovoltaic performance.(3) nano wire is because having the feature such as sub-wavelength dimensions, high surface area, and its absorbing properties is more excellent than film.(4) in low-dimensional ferroelectric material, sizes of ferroelectric domains is generally tens nanometers, and nano wire has the features such as good directionality, draw ratio be large, therefore up to a hundred the electricdomains (along with nanowire length increase can be more) that length reaches in micron-sized nano wire can form series circuit, make its photovoltage more much higher than thin-film material.
Ferroelectric nano-wire is being transplanted to after in described substrate in step b, then is heating, thus increasing the adhesive force of ferroelectric nano-wire, greatly can improve the useful life of nano generator like this.
In step b, ferroelectric nano-wire is in series by several electricdomains, owing to there is different angles between electricdomain, so increase a field, makes all electricdomain arranged radiallys.Increase an electric field or magnetic field, all electricdomains in ferroelectric nano-wire can be made to arrange in the same direction, thus make photovoltaic better effects if.
Described ferroelectric nano-wire is monocrystal nano-material, thus improves photovoltaic performance.
The invention has the beneficial effects as follows: employing of the present invention, solar energy is a kind of inexhaustible regenerative resource, the nano generator of the sunlight driving of development, not only can power to the nano-device long duration in the fields such as Aero-Space, and contribute to microminiaturization, the nanometer of moving system.
Accompanying drawing explanation
Fig. 1 is the structural representation of photovoltaic nanometer electric generator;
Fig. 2 is the flow chart of photovoltaic nanometer electric generator manufacture method.
Embodiment
Below in conjunction with drawings and Examples, the invention will be further described:
A kind of photovoltaic nanometer electric generator as shown in Figure 1, comprise substrate 1, first electrode 2, ferroelectric nano-wire 3 and the second electrode 4, described first electrode 2 and the second electrode 4 arrange with in described substrate 1, ferroelectric nano-wire 3 described in cross growth in described substrate 1 between this first electrode 2 and second electrode 4, described first electrode 2 and the second electrode 4 lay respectively at the both ends of described ferroelectric nano-wire 3.
As shown in Figure 2: a kind of photovoltaic nanometer electric generator manufacture method, is characterized in that comprising the steps:
A. make substrate 1, substrate silicon is prepared a layer insulating thus obtains substrate 1;
B. by sputtering or evaporating, the first electrode 2 and the second electrode 4 are placed in substrate 1, then carry out photoetching according to design, thus obtain satisfactory electrode;
C. adopt wet chemistry method to prepare ferroelectric nano-wire 3, then be transplanted in described substrate 1 by this ferroelectric nano linear array 3, these ferroelectric nano-wire 3 two ends are between described first electrode 2 and the second electrode 4; Ferroelectric nano-wire 3 is being transplanted to after in described substrate 1, contact well with the second electrode 4 with described first electrode 2 to make ferroelectric nano-wire 3, the substrate 1 being provided with ferroelectric nano-wire 3, first electrode 2 and the second electrode 4 is heated, thus increases the adhesive force of ferroelectric nano-wire 3; Because ferroelectric nano-wire 3 is in series by several electricdomains, owing to there is different angles between electricdomain, so increase an electric field or magnetic field, make all electricdomain arranged radiallys, thus make photovoltaic better effects if of the present invention;
D. encapsulate, encapsulate after test passes.
Above ferroelectric nano-wire 3 is monocrystal nano-material.

Claims (4)

1. a photovoltaic nanometer electric generator, comprise substrate (1), the first electrode (2), ferroelectric nano-wire (3) and the second electrode (4), it is characterized in that: described first electrode (2) and the second electrode (4) are arranged in described substrate (1), ferroelectric nano-wire (3) described in the upper cross growth of described substrate (1) between this first electrode (2) and second electrode (4), described ferroelectric nano-wire (3) is in series by several electricdomains; Described first electrode (2) and the second electrode (4) lay respectively at the both ends of described ferroelectric nano-wire (3).
2. a photovoltaic nanometer electric generator manufacture method, is characterized in that comprising the steps:
A. make substrate (1), substrate silicon is prepared a layer insulating thus obtains substrate (1);
B. by sputtering or method of evaporating, the first electrode (2) and the second electrode (4) are placed in substrate (1), then carry out photoetching according to design, thus obtain satisfactory electrode,
C. wet chemistry method is adopted to prepare ferroelectric nano-wire (3), again this ferroelectric nano-wire (3) is transplanted in described substrate (1), this ferroelectric nano-wire (3) two ends are connected with the second electrode (4) with described first electrode (2) respectively, described ferroelectric nano-wire (3) is in series by several electricdomains, owing to there is different angles between electricdomain, so increase a field, make all electricdomain arranged radiallys;
D. encapsulate, encapsulate after test passes.
3. photovoltaic nanometer electric generator manufacture method according to claim 2, it is characterized in that: in step b after ferroelectric nano-wire (3) being transplanted to described substrate (1) above, heat again, thus increase the adhesive force of ferroelectric nano-wire (3).
4. photovoltaic nanometer electric generator manufacture method according to claim 2, is characterized in that: described ferroelectric nano-wire (3) is monocrystal nano-material.
CN201310690635.4A 2013-12-13 2013-12-13 Photovoltaic nanometer electric generator and manufacture method thereof Expired - Fee Related CN103681907B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310690635.4A CN103681907B (en) 2013-12-13 2013-12-13 Photovoltaic nanometer electric generator and manufacture method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310690635.4A CN103681907B (en) 2013-12-13 2013-12-13 Photovoltaic nanometer electric generator and manufacture method thereof

Publications (2)

Publication Number Publication Date
CN103681907A CN103681907A (en) 2014-03-26
CN103681907B true CN103681907B (en) 2016-04-20

Family

ID=50318829

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310690635.4A Expired - Fee Related CN103681907B (en) 2013-12-13 2013-12-13 Photovoltaic nanometer electric generator and manufacture method thereof

Country Status (1)

Country Link
CN (1) CN103681907B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108566248B (en) * 2018-05-02 2021-01-26 京东方科技集团股份有限公司 Optical information imaging assembly, manufacturing method and display device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4236938A (en) * 1979-07-25 1980-12-02 The United States Of America As Represented By The Secretary Of The Army Efficient high voltage photovoltaic cells
CN102176472A (en) * 2011-02-21 2011-09-07 华东师范大学 Bulk effect solar cell material and preparation method thereof
CN102856430A (en) * 2012-07-25 2013-01-02 常州大学 Preparation method for bismuth titanate nanowire solar cells
CN103078014A (en) * 2013-01-29 2013-05-01 上海交通大学 Preparation method of solar battery with bismuth ferrite/sodium bismuth titanate-barium titanate heterostructure ferroelectric film

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7851697B2 (en) * 2005-03-22 2010-12-14 Agency For Science, Technology And Research Thin film photovoltaic device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4236938A (en) * 1979-07-25 1980-12-02 The United States Of America As Represented By The Secretary Of The Army Efficient high voltage photovoltaic cells
CN102176472A (en) * 2011-02-21 2011-09-07 华东师范大学 Bulk effect solar cell material and preparation method thereof
CN102856430A (en) * 2012-07-25 2013-01-02 常州大学 Preparation method for bismuth titanate nanowire solar cells
CN103078014A (en) * 2013-01-29 2013-05-01 上海交通大学 Preparation method of solar battery with bismuth ferrite/sodium bismuth titanate-barium titanate heterostructure ferroelectric film

Also Published As

Publication number Publication date
CN103681907A (en) 2014-03-26

Similar Documents

Publication Publication Date Title
Xie et al. Hybrid triboelectric nanogenerators: from energy complementation to integration
CN1960118B (en) Power generation system of hybrid energy sources based on photovoltaic effect, and thermoelectric effect of solar energy
CN103227227B (en) Laser energy supply harvester based on CNT and discharge loop
CN103296123B (en) P-type carbon quantum dot/N-type silicon nanowire array heterojunction solar battery and preparation method thereof
CN104993773B (en) A kind of compound energy cell apparatus and preparation method thereof
CN104868045B (en) Electrooptical device and its application
CN102270692B (en) Graphene-cadmium selenide nanoribbon heterojunction, battery, module and preparation method of module
CN104332522B (en) Graphene double-junction solar battery and preparation method thereof
CN201584931U (en) Low-temperature semiconductor power generating device recycling waste heat of medium and small-sized equipment in industry to generate power
Zhao et al. Hybridized nanogenerators for effectively scavenging mechanical and solar energies
Liu et al. Ultraviolet-protecting, flexible and stable photovoltaic-assisted piezoelectric hybrid unit nanogenerator for simultaneously harvesting ultraviolet light and mechanical energies
Kathalingam et al. Piezo and photoelectric coupled nanogenerator using CdSe quantum dots incorporated ZnO nanowires in ITO/ZnO NW/Si structure
CN206271760U (en) A kind of flexible wearable temperature difference energy collecting device based on MEMS technology
CN108963003A (en) solar battery
CN105280818A (en) Stable planar heterojunction perovskite solar cell and manufacturing method thereof
CN103681907B (en) Photovoltaic nanometer electric generator and manufacture method thereof
CN109216484A (en) A kind of graphene/AlGaAs ties heterogeneous solar battery and preparation method thereof more
CN102983009A (en) Flexible photo-anode of dye-sensitized solar cell based on zinc oxide nano-sheet and preparation of flexible photo-anode of dye-sensitized solar cell based on zinc oxide nano-sheet
CN100499178C (en) One-dimensional nano-material-based photo-electric converter
CN110905723A (en) Novel wind driven generator with fractal interface structure
CN101562204B (en) Solar energy battery
CN108831947A (en) A kind of flexible photovoltaic thermoelectric integral compound power-generating device
CN216084899U (en) Solar cell applying phase change heat storage to new energy
CN105226179B (en) A kind of thermal electric generator and its electricity-generating method based on single one-dimensional homojunction micro-/ nano line
CN204464307U (en) PbSe quantum dot and the photosensitive field effect transistor of Graphene bulk heterojunction

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20160420

Termination date: 20181213

CF01 Termination of patent right due to non-payment of annual fee