CN103681907A - Photovoltaic nanometer electric generator and manufacturing method thereof - Google Patents

Photovoltaic nanometer electric generator and manufacturing method thereof Download PDF

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CN103681907A
CN103681907A CN201310690635.4A CN201310690635A CN103681907A CN 103681907 A CN103681907 A CN 103681907A CN 201310690635 A CN201310690635 A CN 201310690635A CN 103681907 A CN103681907 A CN 103681907A
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electrode
nano
wire
photovoltaic
ferroelectric
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CN103681907B (en
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符春林
蔡苇
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Chongqing University of Science and Technology
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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Abstract

The invention discloses a photovoltaic nanometer electric generator and a manufacturing method of the photovoltaic nanometer electric generator. The photovoltaic nanometer electric generator comprises a base, a first electrode, a ferroelectric nanometer wire and a second electrode. The first electrode and the second electrode are arranged on the base, and the ferroelectric nanometer wire transversely grows on the portion, between the first electrode and the second electrode, of the base. The manufacturing method of the photovoltaic nanometer electric generator includes the following steps of firstly, manufacturing the base; secondly, arranging the first electrode and the second electrode on the base through sputtering; thirdly, producing the ferroelectric nanometer wire through the wet chemistry method, and then transplanting the ferroelectric nanometer wire array onto the base 1, wherein the two ends of the ferroelectric nanometer wire are located between the first electrode and the second electrode; fourthly, conducting packaging after the photovoltaic nanometer electric generator is tested to be qualified. According to the photovoltaic nanometer electric generator which is powered by sunlight and developed through the method, power can be continuously supplied to nanometer devices for a long time in the aerospace field and other fields, and microminiaturization and nanocrystallization of a propulsion system are facilitated.

Description

Photovoltaic nano generator and manufacture method thereof
Technical field
The invention belongs to nano generator technical field, specifically, relate in particular to a kind of photovoltaic nano generator and manufacture method thereof.
Background technology
As the important high and new technology field that 21st century rises, nanometer technology is just experiencing unprecedented high-speed development period.Complete on basis prepared by a large amount of novel nano-materials, the research of the various associated nano-devices with specific function is becoming the motive force that Development of Nano-technology is new.Because the miniaturization of system requires the microminiaturization of corresponding energy supplyystem, therefore, in a complicated nanosystems, the energy resource supply of individual devices is vital.From angles green, energy-conserving and environment-protective, consider, desirable nanoscale electric supply installation should be do not rely on the external charging energy, nontoxic, do not produce the system of polluting and powering continuously.No matter the nanosystems of this self-supply power source, be in biology, medical science, human health, or all have immeasurable value at aspects such as military affairs, radio communication and wireless sensings.2006, professor Wang Zhonglin of the georgia ,u.s.a Institute of Technology etc. successfully converted mechanical energy to electric energy within the scope of nanoscale, developed minimum in the world generator-nano generator.The basic principle of this nano generator is: when nano wire is under external force during dynamic tensile, in nano wire, generate piezoelectricity electromotive force, corresponding transient current flows with balance Fermi level at two ends, and this nano generator based on piezoelectric effect needs the external world that mechanical force is provided.As everyone knows, solar energy is a kind of important regenerative resource, has aboundresources, widely distributed, the clean advantage such as clean.The conversion using of solar energy has three kinds of modes: light-Re conversion, the conversion of light-electricity and light-chemical conversion.Wherein, light-electricity conversion (photovoltaic generation) is most important, the most frequently used mode of solar energy conversion using.Utilize photovoltaic effect to can be made into photovoltaic cell, thereby the transform light energy of the sun is become to electric energy, the material of making at present solar cell is mainly the semiconductors such as Si, CdTe, GaAs, and most widely used general, the most deep photovoltaic cell material of research is semiconductor silicon.When energy is mapped to p-n junction higher than the illumination of silicon band gap width, silicon is because absorbing photon and produce electron-hole pair and by separated electronics and the hole of forming of the internal electric field of p-n junction, thus generation photovoltage (stream).But this photovoltaic mechanism has determined the limit of Silicon photrouics conversion efficiency, and its photovoltage is lower.Meanwhile, require the very high purity of silicon, cause battery price very high.
Based on more than, invent that energy-conserving and environment-protective, delivery efficiency that a kind of sunlight drives are high, the nano generator of stable performance, not only can be to the permanent continued power of the nano-device in the fields such as Aero-Space, and contribute to microminiaturization, the nanometer of moving system.
Summary of the invention
The object of the invention is to provide that a kind of energy-conserving and environment-protective, delivery efficiency are high, photovoltaic nano generator and the manufacture method thereof of stable performance.
For achieving the above object, the invention provides a kind of photovoltaic nano generator, comprise substrate, the first electrode, ferroelectric nano-wire and the second electrode, its main points are: described the first electrode and the second electrode are arranged in described substrate, ferroelectric nano-wire described in cross growth in the described substrate between this first electrode and the second electrode.Adopt above structure, because solar energy is a kind of regenerative resource, there is aboundresources, widely distributed, the clean advantage such as clean, the problems such as miniaturization of photovoltaic generation when therefore the present invention utilizes solar energy, have also been solved, simultaneously, the present invention can also form series circuit, thereby significantly improves photovoltaic performance.And existing nano generator is the nano generator that utilizes the piezoelectric effect of semiconductor nanowires to be made into substantially, for collecting the mechanical energy in the various sources of environment, and be translated into electric energy, its structure is substantially, comprise substrate, the first electrode, zinc oxide nano-wire array, polymeric dielectric layer and the second electrode, described the first electrode is arranged in substrate, described zinc oxide nano-wire array vertical-growth is on the first electrode layer, on described zinc oxide nano-wire array layer, be coated with described polymeric dielectric layer, described polymeric dielectric layer is coated by described zinc oxide nano-wire array, the second electrode is arranged on polymeric dielectric layer, the voltage and current output stage that described the first electrode and the second electrode are nano generator.This nano generator structure is because zinc oxide nanowire is very thin, therefore have electrode processing difficulties, the deficiency such as short circuit very easily, and the present invention can avoid the problems such as electrode processing difficulties, short circuit when effectively utilizing regenerative resource.
Described the first electrode and the second electrode lay respectively at the both ends of described ferroelectric nano-wire, so can easily realize series connection, thereby significantly improve photovoltaic performance.
A photovoltaic nano generator manufacture method, is characterized in that comprising the steps:
A. make substrate, thereby prepare a layer insulating on substrate silicon, obtain substrate;
B. by sputter or evaporation, the first electrode and the second electrode are placed in substrate, then according to design, carry out photoetching, thereby obtain satisfactory electrode;
C. adopt wet chemistry method to prepare ferroelectric nano-wire, then this ferroelectric nano linear array is transplanted in described substrate, these ferroelectric nano-wire two ends are between described the first electrode and the second electrode;
D. encapsulation, encapsulates after test passes.
Ferroelectric is a kind of novel photovoltaic cell material, it has unusual photovoltage (APV) effect: evenly the phenomenon of steady-state short-circuit photogenerated current or open circuit voltage appears in ferroelectric crystal under uniform illumination, its distinguishing feature is: photovoltaic voltage is not subject to the restriction of crystal energy gap (Eg), high 2-4 orders of magnitude of comparable Eg.Therefore, the photoelectric conversion efficiency of this class material may be very high.Ferroelectric photovoltaic material is filming, and has obtained many valuable results of study.But with regard to practical application, ferroelectric nano-wire is more suitable for doing photovoltaic material than ferroelectric thin film, main reason is: (1) as monodimension nanometer material, and nano wire is more conducive to the miniaturization, integrated of device than film.(2) nano wire is than the easier monocrystalline of film, thereby improves photovoltaic performance.(3) nano wire is because having the features such as sub-wavelength yardstick, high surface area, and its absorbing properties is more excellent than film.(4) in low-dimensional ferroelectric material, sizes of ferroelectric domains is generally tens nanometers, and nano wire has the features such as good directionality, draw ratio be large, therefore up to a hundred the electricdomains (along with nanowire length increase can be more) that length reaches in micron-sized nano wire can form series circuit, make its photovoltage more much higher than thin-film material.
In step b, after ferroelectric nano-wire being transplanted in described substrate, then heat, thereby increase the adhesive force of ferroelectric nano-wire, the useful life that can greatly improve like this nano generator.
In step b, ferroelectric nano-wire is in series by several electricdomains, owing to there being different angles between electricdomain, so increase a field, makes all electricdomain arranged radiallys.Increase an electric field or magnetic field, can make all electricdomains in ferroelectric nano-wire arrange in the same direction, thereby make photovoltaic better effects if.
Described ferroelectric nano-wire is monocrystal nano-material, thereby improves photovoltaic performance.
The invention has the beneficial effects as follows: employing of the present invention, solar energy is a kind of inexhaustible regenerative resource, the nano generator that the sunlight of development drives, not only can be to the permanent continued power of the nano-device in the fields such as Aero-Space, and contributes to microminiaturization, the nanometer of moving system.
Accompanying drawing explanation
Fig. 1 is the structural representation of photovoltaic nano generator;
Fig. 2 is the flow chart of photovoltaic nano generator manufacture method.
Embodiment
Below in conjunction with drawings and Examples, the invention will be further described:
A kind of photovoltaic nano generator as shown in Figure 1, comprise substrate 1, the first electrode 2, ferroelectric nano-wire 3 and the second electrode 4, in described the first electrode 2 and the second electrode 4 settings and described substrate 1, ferroelectric nano-wire 3 described in cross growth in the described substrate 1 between this first electrode 2 and the second electrode 4, described the first electrode 2 and the second electrode 4 lay respectively at the both ends of described ferroelectric nano-wire 3.
As shown in Figure 2: a kind of photovoltaic nano generator manufacture method, is characterized in that comprising the steps:
A. make substrate 1, thereby prepare a layer insulating on substrate silicon, obtain substrate 1;
B. by sputter or evaporation, the first electrode 2 and the second electrode 4 are placed in substrate 1, then according to design, carry out photoetching, thereby obtain satisfactory electrode;
C. adopt wet chemistry method to prepare ferroelectric nano-wire 3, then this ferroelectric nano linear array 3 is transplanted in described substrate 1, these ferroelectric nano-wire 3 two ends are between described the first electrode 2 and the second electrode 4; After ferroelectric nano-wire 3 being transplanted in described substrate 1, for ferroelectric nano-wire 3 is contacted with the second electrode 4 well with described the first electrode 2, to being provided with the substrate 1 of ferroelectric nano-wire 3, the first electrode 2 and the second electrode 4, heat, thus the adhesive force of increase ferroelectric nano-wire 3; Because ferroelectric nano-wire 3 is in series by several electricdomains, owing to there being different angles between electricdomain, so increase an electric field or magnetic field, make all electricdomain arranged radiallys, thereby make photovoltaic better effects if of the present invention;
D. encapsulation, encapsulates after test passes.
Above ferroelectric nano-wire 3 is monocrystal nano-material.

Claims (6)

1. a photovoltaic nano generator, comprise substrate (1), the first electrode (2), ferroelectric nano-wire (3) and the second electrode (4), it is characterized in that: described the first electrode (2) and the second electrode (4) are arranged in described substrate (1) ferroelectric nano-wire (3) described in cross growth in the described substrate (1) between this first electrode (2) and the second electrode (4).
2. photovoltaic nano generator according to claim 1, is characterized in that: described the first electrode (2) and the second electrode (4) lay respectively at the both ends of described ferroelectric nano-wire (3).
3. a photovoltaic nano generator manufacture method, is characterized in that comprising the steps:
A. make substrate (1), thereby prepare a layer insulating on substrate silicon, obtain substrate (1);
B. by sputter or method of evaporating, the first electrode (2) and the second electrode (4) are placed in to substrate (1) above, then according to design, carry out photoetching, thereby obtain satisfactory electrode;
C. adopt wet chemistry method to prepare ferroelectric nano-wire (3), then it is upper that this ferroelectric nano-wire (3) is transplanted to described substrate (1), this ferroelectric nano-wire (3) two ends are connected with the second electrode (4) with described the first electrode (2) respectively;
D. encapsulation, encapsulates after test passes.
4. photovoltaic nano generator manufacture method according to claim 3, is characterized in that: in step b ferroelectric nano-wire (3) is transplanted to described substrate (1) upper after, then heat, thereby increase the adhesive force of ferroelectric nano-wire (3).
5. photovoltaic nano generator manufacture method according to claim 3, it is characterized in that: ferroelectric nano-wire in step b (3) is in series by several electricdomains, owing to there being different angles between electricdomain, so increase a field, make all electricdomain arranged radiallys.
6. photovoltaic nano generator manufacture method according to claim 3, is characterized in that: described ferroelectric nano-wire (3) is monocrystal nano-material.
CN201310690635.4A 2013-12-13 2013-12-13 Photovoltaic nanometer electric generator and manufacture method thereof Expired - Fee Related CN103681907B (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108566248A (en) * 2018-05-02 2018-09-21 京东方科技集团股份有限公司 A kind of optical information Image Creation component, production method and display device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4236938A (en) * 1979-07-25 1980-12-02 The United States Of America As Represented By The Secretary Of The Army Efficient high voltage photovoltaic cells
US20060213549A1 (en) * 2005-03-22 2006-09-28 Kui Yao Thin film photovoltaic device
CN102176472A (en) * 2011-02-21 2011-09-07 华东师范大学 Bulk effect solar cell material and preparation method thereof
CN102856430A (en) * 2012-07-25 2013-01-02 常州大学 Preparation method for bismuth titanate nanowire solar cells
CN103078014A (en) * 2013-01-29 2013-05-01 上海交通大学 Preparation method of solar battery with bismuth ferrite/sodium bismuth titanate-barium titanate heterostructure ferroelectric film

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4236938A (en) * 1979-07-25 1980-12-02 The United States Of America As Represented By The Secretary Of The Army Efficient high voltage photovoltaic cells
US20060213549A1 (en) * 2005-03-22 2006-09-28 Kui Yao Thin film photovoltaic device
CN102176472A (en) * 2011-02-21 2011-09-07 华东师范大学 Bulk effect solar cell material and preparation method thereof
CN102856430A (en) * 2012-07-25 2013-01-02 常州大学 Preparation method for bismuth titanate nanowire solar cells
CN103078014A (en) * 2013-01-29 2013-05-01 上海交通大学 Preparation method of solar battery with bismuth ferrite/sodium bismuth titanate-barium titanate heterostructure ferroelectric film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108566248A (en) * 2018-05-02 2018-09-21 京东方科技集团股份有限公司 A kind of optical information Image Creation component, production method and display device
CN108566248B (en) * 2018-05-02 2021-01-26 京东方科技集团股份有限公司 Optical information imaging assembly, manufacturing method and display device

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