CN101527176A - PN type nuclear battery and preparation method thereof - Google Patents
PN type nuclear battery and preparation method thereof Download PDFInfo
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- CN101527176A CN101527176A CN200910030431A CN200910030431A CN101527176A CN 101527176 A CN101527176 A CN 101527176A CN 200910030431 A CN200910030431 A CN 200910030431A CN 200910030431 A CN200910030431 A CN 200910030431A CN 101527176 A CN101527176 A CN 101527176A
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- 238000002360 preparation method Methods 0.000 title abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 18
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims abstract description 8
- 238000000407 epitaxy Methods 0.000 claims abstract description 6
- 150000001875 compounds Chemical class 0.000 claims abstract description 3
- 229910002601 GaN Inorganic materials 0.000 claims description 50
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 10
- 239000011777 magnesium Substances 0.000 claims description 10
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 9
- 229910052749 magnesium Inorganic materials 0.000 claims description 9
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910001020 Au alloy Inorganic materials 0.000 claims description 4
- 238000005538 encapsulation Methods 0.000 claims description 4
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 2
- CIOAGBVUUVVLOB-NJFSPNSNSA-N Strontium-90 Chemical compound [90Sr] CIOAGBVUUVVLOB-NJFSPNSNSA-N 0.000 claims description 2
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 2
- 238000003754 machining Methods 0.000 claims description 2
- PXHVJJICTQNCMI-RNFDNDRNSA-N nickel-63 Chemical group [63Ni] PXHVJJICTQNCMI-RNFDNDRNSA-N 0.000 claims description 2
- VQMWBBYLQSCNPO-NJFSPNSNSA-N promethium-147 Chemical compound [147Pm] VQMWBBYLQSCNPO-NJFSPNSNSA-N 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 9
- 239000000463 material Substances 0.000 abstract description 4
- 239000002699 waste material Substances 0.000 abstract description 4
- 238000004806 packaging method and process Methods 0.000 abstract 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 20
- 230000000694 effects Effects 0.000 description 12
- 229910021529 ammonia Inorganic materials 0.000 description 10
- 230000005855 radiation Effects 0.000 description 9
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 6
- 238000010792 warming Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000005676 thermoelectric effect Effects 0.000 description 2
- 101100460147 Sarcophaga bullata NEMS gene Proteins 0.000 description 1
- YZCKVEUIGOORGS-NJFSPNSNSA-N Tritium Chemical compound [3H] YZCKVEUIGOORGS-NJFSPNSNSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 230000000155 isotopic effect Effects 0.000 description 1
- 244000005700 microbiome Species 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910052722 tritium Inorganic materials 0.000 description 1
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Abstract
The invention discloses a PN type nuclear battery and a preparation method thereof. The compound epitaxial technique of twice MOCVD epitaxy and once HVPE epitaxy is adopted to grow and obtain a lining, i.e. a PN unit material structure with an n type GaN doping layer and a p type GaN doping layer. Then, semiconductor micro-processing is adopted for splashing and generating a corresponding contact electrode so as to form a basic battery unit. An isotope is coupled to the p type contact electrode, and then the nuclear battery is obtained after packaging. As the service life of the nuclear battery is determined by the half-life of the isotope, in the invention, the isotope type (pure beta isotope) with simple protection can be flexibly used so as to greatly improve the energy conversion efficiency and the energy density (energy capacity) of the nuclear battery, prolong the service life of the nuclear battery and provide an effective approach for reasonably reusing waste materials.
Description
Technical field
The present invention relates to a kind of semiconductor core battery device, relate in particular to the radiation volta effect nuclear battery of once changing in the nuclear battery, belong to the energy source use field.
Background technology
As a rule, battery comprises chemical cell and physical battery two big classes.Chemical cell mainly contains dry cell, accumulator, fuel cell, microorganism battery etc., and these all are to see the battery types of being used to commonly used among the human lives, but the energy volume of this type of battery is less relatively, can't satisfy the demand of long-term power supply.Physical battery mainly comprises two kinds of solar cell and nuclear batteries, and wherein nuclear battery also is isotope battery or atomic battery, is the battery that nuclear radiant directly is converted to electric energy.According to the energy source difference, nuclear battery can be divided into thermal source nuclear battery and radiation energy nuclear battery again.The utilization of thermal source nuclear battery be isotopic heat, as the thermoelectric effect nuclear battery; The ray energy that the radiation energy nuclear battery produces when being the isotope decay that utilizes, this energy is far longer than decay heat, as the volta effect nuclear battery.Can be divided into by the number of times of conversion process of energy and once to change nuclear battery (as thermoelectric effect and volta effect nuclear battery) and secondary conversion nuclear battery (as radiation-light-volta effect nuclear battery), the efficient of generally once changing nuclear battery will be higher than secondary conversion nuclear battery.The nuclear battery that the present invention relates to belongs to the radiation energy nuclear battery of once changing in the nuclear battery, it is radiation volta effect nuclear battery, its principle of work is: when the decay energy ray shines on the nuclear battery, because of the absorbed radiation energy produces ionization effect of radiation, in material, produce a lot of electron hole pairs, electron hole pair drifts about to P type and N type side respectively under the built in field effect of nuclear battery PN junction, to collect a large amount of holes in P type side, and will collect a large amount of electronics in N type side, the P electrode is connected with the N electrode and adds load, will produce electric current in the loop, the P electrode is equivalent to the positive pole of battery, and the N electrode is equivalent to the negative pole of battery.
The nuke rubbish problem is one of biggest obstacle of further developing of current nuclear energy in the world, can be good at utilizing these special rubbish, turn waste into wealth, it will be extremely meaningful and a be worth thing, the nuke rubbish generating that will be possible to use, see on the whole, will produce huge economic benefit and social benefit widely.
Nuclear battery has that volume is little, in light weight, life-span long (by the half life period decision), reliability height, energy density advantages of higher, thus need long-term power supply and unattended occasion in Aero-Space, deep-sea, polar region etc., field extensive application prospects such as electronic product such as pacemaker, minute mechanical and electrical system, mobile phone, notebook computer even electric automobile.
Summary of the invention
The object of the present invention is to provide a kind of PN type nuclear battery and preparation method thereof, isotope and GaNPN semiconductor devices is integrated by simple and ripe preparation technology, and then can convert isotope decay to electric energy directly, efficiently, in addition industry and life utilize.
Technical solution of the present invention is:
A kind of PN type nuclear battery is characterized in that: comprise Al
2O
3Substrate, n type doped layer, p type doped layer, p type contact electrode, n type contact electrode and isotope layer; Wherein n type doped layer is that doping content is 1 * 10
17/ cm
3～1 * 10
19/ cm
3Between mix silicon GaN layer; And p type doped layer is that doping content is 1 * 10
19/ cm
3～1 * 10
20/ cm
3Between mix magnesium GaN layer.N type GaN doped layer is located at Al
2O
3The polished surface of substrate, p type doped layer are arranged on the surface of n type GaN doped layer, and p type contact electrode and n type contact electrode are separately positioned on the surface of p type GaN doped layer and n type GaN doped layer; Pure β isotope layer is arranged on the p type contact electrode.
Further, above-mentioned PN type nuclear battery, wherein said Al
2O
3Substrate is a β phase sapphire, (001) crystalline phase, and thickness is 200～600 μ m; The thickness of described n type GaN doped layer is 15～100 μ m, and it is 1 * 10 in MOCVD extension while controlled doping concentration that Si wherein mixes
18/ cm
3To 1 * 10
19/ cm
3Between feed SiH
4, and the HVPE extension simultaneously controlled doping concentration 1 * 10
17/ cm
3To 1 * 10
18/ cm
3Between feed SiH
4Realize; The thickness of described p type GaN doped layer is 15～30nm, and wherein the Mg doping is to proceed MOCVD extension while controlled doping concentration 1 * 10
19/ cm
3To 1 * 10
20/ cm
3Between feed that two luxuriant magnesium realize; Described n type contact electrode obtains by depositing Ti/Al/Ti/Au, Ti thickness 20～80nm wherein, Al thickness 20～100nm, Ti thickness 20～200nm, Au thickness 100～300nm; Described p type contact electrode obtains by deposition Ni/Au, and wherein Ni thickness is 5～20nm; Au thickness is 10～25nm.
Further, above-mentioned PN type nuclear battery, the upper and lower surface of the wherein said isotope layer GaN PN semiconductor devices that bonds respectively.
Further, above-mentioned PN type nuclear battery is wherein at described Al
2O
3Also can further be provided with the gallium nitride cushion between substrate and the n type GaN doped layer.
Above-mentioned PN type nuclear battery is prepared according to the following steps:
(1) at Al
2O
3Use MOCVD and the compound epitaxy method growing n-type of HVPE doped layer on the polished surface of substrate, and the MOCVD extension simultaneously controlled doping concentration 1 * 10
18/ cm
3To 1 * 10
19/ cm
3Between feed SiH
4, the HVPE extension simultaneously controlled doping concentration 1 * 10
17/ cm
3To 1 * 10
18/ cm
3Between feed SiH
4
(2) continue to use MOCVD epitaxy method growing p-type GaN doped layer on n type GaN doped layer surface, and the MOCVD extension simultaneously controlled doping concentration 1 * 10
19/ cm
3To 1 * 10
20/ cm
3Between feed two luxuriant magnesium;
(3) adopt semiconductor machining, obtain n type doped layer step on n type doped layer surface;
(4) magnetron sputtering and depositing Ti/Al/Ti/Au alloy on exposed n type GaN step surface form n type contact electrode, and on p type GaN surface also magnetron sputtering and deposit the Ni/Au alloy of complete covering, form p type contact electrode;
(5) isotope layer is bonded in the surface of p type contact electrode;
(6) carry out the nuclear battery encapsulation.
Further, in the step (1) at described Al
2O
3First extension one thickness is about the gallium nitride cushion of 20nm on the polished surface of substrate.
Use technical scheme of the present invention, improved the energy conversion efficiency and the energy density (energy volume) of nuclear battery greatly, prolonged the serviceable life of nuclear battery, also turn waste into wealth, rationally utilize and created effective way simultaneously for nuke rubbish.
Description of drawings
Fig. 1 is the axle diagrammatic cross-section of PN type nuclear battery one embodiment of the present invention;
Fig. 2 is the schematic top plan view of nuclear battery embodiment shown in Figure 1;
Fig. 3 is the axle diagrammatic cross-section of another embodiment of PN type nuclear battery of the present invention.
Wherein, the implication of each Reference numeral is:
1-Al
2O
3Substrate, 2-n type GaN doped layer, 3-p type GaN doped layer, 4-p type contact electrode, 5-n type contact electrode, 6-isotope layer, 7-gallium nitride cushion.
Embodiment
Below in conjunction with embodiment and accompanying drawing thereof, the present invention is described in further detail:
Embodiment one:
Nuclear battery one example structure axle diagrammatic cross-section is as shown in Figure 1 at first prepared Al
2O
3Disk, it can be bought from the market and obtain single-sided polishing 2 inches diameter C face β-Al
2O
3Substrate 1, its thickness are 300 μ m.
Carry out PN wafer growth technique then: use the MOCVD epitaxial growth equipment, earlier with Al
2O
3Substrate 1 feeds the ammonia nitrogenize down about 2 minutes at 1100 ℃, cools to 570 ℃ of gallium nitride (GaN) cushions 7 that feed about trimethyl gallium and ammonia extension 20nm then, is warming up to 1150 ℃ then and is controlling silicon doping concentration 1 * 10
18/ cm
3Stable case under feed n-GaN epitaxial loayer about trimethyl gallium, ammonia and silane extension 2 μ m, reduce to room temperature afterwards, take out sample; Sample is put into the HVPE system, be warming up to 1070 ℃ and controlling silicon doping concentration 1 * 10
17/ cm
3Stable case under feed the n-GaN doped layer 2 of hydrogen chloride, ammonia, silane and gallium extension 20 μ m, reduce to room temperature afterwards again, take out sample; Once more sample is reentered into the MOCVD system, is warming up to 1070 ℃ and is controlling the magnesium doping content 1 * 10
19/ cm
3Stable case under feed trimethyl gallium, ammonia and two luxuriant magnesium, the p-GaN doped layer 3 of extension 20nm.
Then, use ultraviolet photolithographic machine photoetching and ICP lithographic technique, obtain n type step on the surface of n type GaN doped layer 2; On said n type step, use magnetron sputtering technique depositing Ti (20nm)/Al (20nm)/Ti (20nm)/Au (300nm) (be Ti deposition 20nm, Al deposits 20nm, and Ti deposits 20nm, and Au deposits 300nm) preparation to finish n type contact electrode 5; On the surface of above-mentioned p type GaN doped layer 3, use magnetron sputtering technique deposition Ni (5nm)/Au (10nm) preparation to finish p type contact electrode 4; Sheet nickel-63 isotope layer 6 is bonded on the p type contact electrode 4; GaN PN nuclear battery is made in encapsulation.
Embodiment two:
At first prepare Al
2O
3Disk, it can be bought from the market and obtain single-sided polishing 2 inches diameter C face β-Al
2O
3Substrate 1, its thickness are 400 μ m.
Carry out PN wafer growth technique then: use the MOCVD epitaxial growth equipment, earlier with Al
2O
3Substrate 1 feeds the ammonia nitrogenize down about 2 minutes at 1100 ℃, cools to 570 ℃ of gallium nitride (GaN) cushions 7 that feed about trimethyl gallium and ammonia extension 20nm then, is warming up to 1150 ℃ then and is controlling silicon doping concentration 1 * 10
19/ cm
3Stable case under feed n-GaN epitaxial loayer about trimethyl gallium, ammonia and silane extension 2 μ m, reduce to room temperature afterwards, take out sample; Sample is put into the HVPE system, be warming up to 1070 ℃ and controlling silicon doping concentration 1 * 10
18/ cm
3Stable case under feed the n-GaN doped layer 2 of hydrogen chloride, ammonia, silane and gallium extension 20 μ m, reduce to room temperature afterwards again, take out sample; Once more sample is reentered into the MOCVD system, is warming up to 1070 ℃ and is controlling the magnesium doping content 1 * 10
20/ cm
3Stable case under feed trimethyl gallium, ammonia and two luxuriant magnesium, the p-GaN doped layer 3 of extension 17nm.
Then, use ultraviolet photolithographic machine photoetching and ICP lithographic technique, obtain n type step on the surface of n type GaN doped layer 2; On said n type step, use magnetron sputtering technique depositing Ti (20nm)/Al (20nm)/Ti (20nm)/Au (300nm) (be Ti deposition 20nm, Al deposits 20nm, and Ti deposits 20nm, and Au deposits 300nm) preparation to finish n type contact electrode 5; On the surface of above-mentioned p type GaN doped layer 3, use magnetron sputtering technique deposition Ni (6nm)/Au (12nm) preparation to finish p type contact electrode 4, finish the preparation of GaN PN semiconductor devices thus.
At last the upper and lower surface of sheet promethium-147 isotope layer 6 bond respectively a GaN PN semiconductor devices that is prepared from by previous steps (isotope layer 6 respectively with the p type contact electrode bonding of each GaN PN semiconductor devices, as shown in Figure 3), GaN PN nuclear battery is made in encapsulation.So can improve the energy conversion efficiency twice.
Embodiment three:
The preparation method is identical with above-mentioned two embodiment, battery structure both can have been selected the single structure of embodiment one for use, also can select the composite structure of embodiment two for use, the difference characteristics of present embodiment are that this isotope layer 6 also can use the nuke rubbish Strontium-90, can realize preparing radiation volta effect nuclear battery efficiently equally.
It should be noted that: comprise in all embodiments of above-mentioned three embodiment, p type GaN doped layer and p type contact electrode gross thickness can not surpass 40nm (getting the one side for embodiment two described situations calculates), otherwise will influence the conversion efficiency of nuclear battery.And, different nuclear batteries can be integrated according to certain mode, thereby obtain the nuclear battery of high voltage more or electric current, to satisfy the needs of different situations.
Use from expanding, (each nuclear battery is the disc of diameter 200 μ m, is delivered on the wafer as shown in Figure 2), adopts CMP attenuated polishing Al with little energy domain to use photoetching technique on 2 inches GaN PN wafers
2O
3To 100 μ m, adopt laser scribing means to cut into the grid that the length of side is 220 * 220 μ m, with the sliver machine above-mentioned grid is split into single little energy nuclear battery device of apportion then, can or integrate with the MEMS bonding of effect, provide the energy to MEMS.
Because technique scheme is used, the present invention compared with prior art has following advantages:
1. in the prior art, dropping into the nuclear battery of using mainly is the pyroelectric effect nuclear battery, makes Be used on the spacecraft. If the thermoelectrical efficiency nuclear battery wants to obtain higher efficient, must have certain Power, therefore be not suitable for low-power and micro-system power supply place. And MEMS and NEMS Fast development, to the demand of little energy also with rapid growth, this also just one of the present invention Important applied field. Because nuclear battery of the present invention, can be prepared into volume little, simple in structure, Single battery power can be accomplished between the 1 μ W-5W. Use in the pyroelectric effect nuclear battery in addition Isotope is Pu-238 and Po-210, has very strong toxicity, uses very dangerous; And this The nuclear battery of invention design can use the nontoxic isotopes such as tritium, Ni, Pm, can safety Use; Moreover the theoretical transformation efficient of pyroelectric effect nuclear battery will be well below radiation of the present invention The volta effect nuclear battery.
2. because GaN PN nuclear battery of the present invention uses is the most ripe third generation half Conductor material GaN, it has wider than the Si material in the prior art (Si nuclear battery) Bandwidth, better radioresistance and heat resistance. So GaN PN nuclear battery efficient of the present invention (the high conversion efficiency of Si is 15%, and the highest the turning to of GaN PN will to be higher than the Si nuclear battery far away Changing efficient can be up to 30%).
To sum up, PN type nuclear battery of the present invention and preparation method thereof provides a kind of practicable Technical scheme. Energy conversion efficiency and energy density (the energy appearance of nuclear battery have greatly been improved Long-pending), prolonged service life of nuclear battery, simultaneously also for nuke rubbish is turned waste into wealth, reasonable profit With having created effective way. Below only be some concrete exemplary applications of the present invention, to the present invention Protection domain do not constitute any limitation. All employing equivalents or equivalence are replaced and are formed Technical scheme all drops on rights protection range of the present invention.
Claims (10)
1. a PN type nuclear battery is characterized in that: battery bottom Al
2O
3Substrate surface is provided with n type doped layer, and be provided with the p type doped layer of surface area on n type doped layer surface less than n type doped layer, and two contact electrodes are separately positioned on corresponding the n type doped layer and p type doped layer surface, and be provided with the pure β isotope layer of identical table area on p type contact electrode surface, wherein n type doped layer is to be doped with silicon and doping content between 1 * 10
18/ cm
3～1 * 10
19/ cm
3The GaN layer; And p type doped layer is to be doped with magnesium and doping content between 1 * 10
19/ cm
3～1 * 10
20/ cm
3The GaN layer.
2. a kind of PN type nuclear battery according to claim 1 is characterized in that: described pure β isotope layer is nickel-63, promethium-147 or Strontium-90.
3. a kind of PN type nuclear battery according to claim 1 is characterized in that: described Al
2O
3Be provided with the gallium nitride cushion between substrate and the n type doped layer.
4. a kind of PN type nuclear battery according to claim 1 is characterized in that: the thickness of described n type doped layer is 15～100 μ m.
5. a kind of PN type nuclear battery according to claim 1, it is characterized in that: the thickness of described p type doped layer is 15～30nm.
6. a kind of PN type nuclear battery according to claim 1, it is characterized in that: the thickness of described contact electrode is 15～30nm, and the gross thickness of p type contact electrode and p type GaN doped layer is less than 40nm.
7. a kind of PN type nuclear battery according to claim 1, it is characterized in that: described isotope layer is consistent with the surface area of p type contact electrode, and its value is between 0.01-1800mm
2
8. a kind of PN type nuclear battery according to claim 1 is characterized in that: the upper and lower surface of the described isotope layer GaN PN semiconductor devices that bonds respectively.
9. method for preparing the described PN type of claim 1 nuclear battery is characterized in that: comprise step:
(1) at Al
2O
3Use MOCVD and the compound epitaxy method growing n-type of HVPE doped layer on the polished surface of substrate, and the MOCVD extension simultaneously controlled doping concentration 1 * 10
18/ cm
3To 1 * 10
19/ cm
3Between feed SiH
4, the HVPE extension simultaneously controlled doping concentration 1 * 10
17/ cm
3To 1 * 10
18/ cm
3Between feed SiH
4
(2) continue to use MOCVD epitaxy method growing p-type GaN doped layer on n type GaN doped layer surface, and the MOCVD extension simultaneously controlled doping concentration 1 * 10
19/ cm
3To 1 * 10
20/ cm
3Between feed two luxuriant magnesium;
(3) adopt semiconductor machining, obtain n type doped layer step on n type doped layer surface;
(4) magnetron sputtering and depositing Ti/Al/Ti/Au alloy on exposed n type GaN step surface form n type contact electrode, and on p type GaN surface also magnetron sputtering and deposit the Ni/Au alloy of complete covering, form p type contact electrode;
(5) isotope layer is bonded in the surface of p type contact electrode;
(6) carry out the nuclear battery encapsulation.
10. a kind of method for preparing PN type nuclear battery according to claim 9 is characterized in that: in the step (1) at described Al
2O
3First extension one gallium nitride cushion on the polished surface of substrate.
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| CN102306511B (en) * | 2011-08-31 | 2013-07-31 | 北京理工大学 | Composite isotopic battery with high output energy and preparation method thereof |
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| CN102446572B (en) * | 2011-12-19 | 2014-04-02 | 中国工程物理研究院核物理与化学研究所 | Tritium isotope microcell and preparation method thereof |
| CN104485150A (en) * | 2014-12-22 | 2015-04-01 | 厦门大学 | Porous silicon pn junction type nuclear battery and preparation method thereof |
| CN114023482A (en) * | 2021-10-28 | 2022-02-08 | 无锡华普微电子有限公司 | Nuclear battery structure and preparation method thereof |
| CN114203327A (en) * | 2021-12-13 | 2022-03-18 | 中国核动力研究设计院 | P-i-n junction, preparation method, diode and beta nuclear battery |
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