CN102593190B - A kind of diode - Google Patents
A kind of diode Download PDFInfo
- Publication number
- CN102593190B CN102593190B CN201210032647.3A CN201210032647A CN102593190B CN 102593190 B CN102593190 B CN 102593190B CN 201210032647 A CN201210032647 A CN 201210032647A CN 102593190 B CN102593190 B CN 102593190B
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- CN
- China
- Prior art keywords
- diode
- chip
- layer
- base
- epoxy resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000003822 epoxy resin Substances 0.000 claims abstract description 32
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 32
- 239000000463 material Substances 0.000 claims abstract description 20
- 239000004033 plastic Substances 0.000 claims abstract description 17
- 238000002161 passivation Methods 0.000 claims abstract description 13
- 229910000679 solder Inorganic materials 0.000 claims description 15
- 239000000654 additive Substances 0.000 claims description 12
- 230000000996 additive effect Effects 0.000 claims description 12
- 239000003085 diluting agent Substances 0.000 claims description 8
- 239000004642 Polyimide Substances 0.000 claims description 6
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 6
- 229920001721 polyimide Polymers 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 229920002379 silicone rubber Polymers 0.000 abstract description 9
- 230000001629 suppression Effects 0.000 abstract description 7
- 238000005538 encapsulation Methods 0.000 abstract description 4
- 230000035882 stress Effects 0.000 description 13
- 238000000034 method Methods 0.000 description 6
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920000260 silastic Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
Abstract
The invention discloses a kind of diode, this diode comprises: base, be installed on the chip in base, and the diode lead be assemblied in above chip, it also comprises the layer of passivation material being coated on chip surface, and to be fixed in base and to be sheathed on the plastic hoop of chip and diode lead periphery, epoxy resin layer is filled with inside this plastic hoop, position outside plastic hoop and between base is filled with silastic-layer, this epoxy resin layer is coated on outside chip and the root of diode lead, silastic-layer be coated on outside plastic hoop and diode lead root epoxy resin layer outside.Diode of the present invention is applicable to AC generator for vehicle and makes three phase rectifier, also can be used for other rectifying device, it is applicable to the making of heavy-duty diode, adopts half epoxy resin half silicon rubber encapsulation to make, and has good high temperature resistant, anti-vibration and anti-lead-in wire crooking ability; And Stress Release ability is better, has higher suppression stress ability.
Description
Technical field
The present invention relates to a kind of diode, particularly relate to a kind of heavy-duty diode.
Background technology
Diode is also known as crystal diode, and be called for short diode (diode), it is a kind of electronic device with unidirectional conduction current.Usually, in order to the rectification of alternating current uses diode, this is also applicable to the rectifier in motor vehicle.At present for the rectifier diode of automobile, to be connected with automobile engine by lead-in wire and to play rectified action.
Such diode structure of the prior art, its tube core all adopts the mode of secondary welding, and this secondary welding makes in the method for diode and is specifically divided into again two kinds of techniques to make.The first is loopful epoxy resins entity package mode, although epoxy resin comparatively mates with the thermal coefficient of expansion of chip and base, there is certain suppression thermal stress ability at work, but because this kind of structure diodes shell is thinner, in the process of press-in pole plate, be pressed into stress be very easily passed to chip, cause chip impaired, product failure, therefore adopt the diode resistance to mechanical stress ability of full epoxy packages poor, easily lost efficacy in diode process of press in.The second is all-silicon rubber entity package mode, and it adopts silicon rubber to encapsulate, although can discharge certain mechanical stress during press-in; But because the thermal coefficient of expansion of silicon rubber with chip and base does not mate, cause suppression thermal stress ability during long-term work more weak, therefore its life level is lower.
Summary of the invention
The object of the invention is to, provide a kind of diode, it adopts half epoxy resin half silicon rubber encapsulation to make, and has high temperature resistant, anti-vibration preferably and anti-lead-in wire bending property, and has fabulous suppression stress ability and release stress ability.
For achieving the above object, the invention provides a kind of diode, comprise: base, be installed on the chip in base, and the diode lead be assemblied in above chip, it also comprises the layer of passivation material being coated on chip surface, and to be fixed in base and to be sheathed on the plastic hoop of chip and diode lead periphery, epoxy resin layer is filled with inside this plastic hoop, position outside plastic hoop and between base is filled with silastic-layer, this epoxy resin layer is coated on outside chip and the root of diode lead, silastic-layer be coated on outside plastic hoop and diode lead root epoxy resin layer outside.
Wherein, described chip is welded and fixed by solder and base, and diode lead is welded in above chip by solder.
In the present invention, described layer of passivation material adopts polyimides and additive material to make.
Concrete, this additive is a kind of diluent, and it includes carboxyl organic substance.
In addition, the present invention also provides a kind of diode, comprises chip and is assemblied in the diode lead on chip, its layer of passivation material also comprising an outer pipe seat, be fixedly installed on the interior base inside this outer pipe seat and be coated on chip surface; Described chip is installed in interior base, epoxy resin layer is filled with inside this interior base, position outside interior base and between outer pipe seat is filled with silastic-layer, this epoxy resin layer is coated on outside chip and the root of diode lead, and silastic-layer is coated on outside interior base and outside the epoxy resin layer of diode lead root.
Wherein, described interior base is fixedly welded on outer pipe seat inside bottom by solder, and chip is fixedly welded on interior base inside bottom by solder, and diode lead is welded in above chip by solder.
Described layer of passivation material adopts polyimides and additive material to make.
Concrete, this additive is a kind of diluent, and it includes carboxyl organic substance.
Diode of the present invention, be applicable to AC generator for vehicle and make three phase rectifier, also can be used for other rectifying device, be applicable to the making of heavy-duty diode, it adopts half epoxy resin half silicon rubber encapsulation to make, and makes this diode have good high temperature resistant, anti-vibration and anti-lead-in wire crooking ability simultaneously; And Stress Release ability is better during its press-in, has higher suppression stress ability during use, diode effectively can be avoided to be pressed into and to lose efficacy in use procedure, extending its useful life.
Accompanying drawing explanation
Fig. 1 is the structural representation of a kind of specific embodiment of diode of the present invention;
Fig. 2 is the structural representation of the another kind of specific embodiment of diode of the present invention.
Embodiment
As shown in Figure 1, the invention provides a kind of diode, it comprises: base 10, be installed on the chip 20 in base 10, and the diode lead 30 be assemblied in above chip 20, it also comprises the layer of passivation material 22 being coated on chip 20 surface, and to be fixed in base 10 and to be sheathed on the plastic hoop 40 of chip 20 and diode lead 30 periphery, epoxy resin layer 42 is filled with inside this plastic hoop 40, position outside plastic hoop 40 and between base 10 is filled with silastic-layer 44, this epoxy resin layer 42 is coated on outside chip 20 and the root of diode lead 30, silastic-layer 44 be coated on outside plastic hoop 40 and diode lead 30 root epoxy resin layer 42 outside.Wherein, the setting of described plastic hoop 40, can guarantee that the epoxy resin of embedding stays in chip circumference, protect chip, makes diode in use have fabulous suppression stress ability; The setting of peripheral silicon rubber, the stress produced when can discharge press-in, makes device have good anti-vibration and anti-lead-in wire crooking ability.Meanwhile, because the heatproof of epoxy resin and silastic material is all more than 240 DEG C, therefore, the diode component made also has good heat-resisting ability simultaneously.
In the specific embodiment of the invention, described chip 20 can be welded and fixed by solder 24 and base, and diode lead 30 can be welded in above chip 20 by solder 32.
As a kind of specific embodiment of the present invention, described layer of passivation material 22 can adopt polyimides and additive material to make.Wherein, this additive is a kind of diluent, and as a kind of selectivity embodiment of the present invention, this diluent can select carboxyl organic substance.
As shown in Figure 2, the present invention also provides a kind of diode, it comprises chip 20 ' and is assemblied in the diode lead 30 ' on chip 20 ', and it also comprises an outer pipe seat 10 ', is fixedly installed on the interior base 12 ' of this outer pipe seat 10 ' inner side and is coated on the layer of passivation material 22 ' on chip 20 ' surface; Described chip 20 ' is installed in interior base 12 ', this interior base 12 ' inner side is filled with epoxy resin layer 42 ', position between interior base 12 ' outside and outer pipe seat 10 ' is filled with silastic-layer 44 ', this epoxy resin layer 42 ' is coated on the root of chip 20 ' outside and diode lead 30 ', and silastic-layer 42 ' is coated on the epoxy resin layer 44 ' outside of interior base 12 ' outside and diode lead 30 ' root.
As a kind of specific embodiment of the present invention, described interior base 12 ' can be fixedly welded on outer pipe seat 10 ' inside bottom by solder 14 ', chip 20 ' can be fixedly welded on interior base 12 ' inside bottom by solder 24 ', and diode lead 30 ' can be welded in chip 20 ' top by solder 32 '.As a kind of selectivity embodiment of the present invention; described outer pipe seat 10 ' can adopt bowl structure design with interior base 12 '; encapsulated epoxy resin in interior base 12 '; this interior base 12 ' is for collecting ring epoxy resins; make epoxy resin can be good at protecting chip 20 ', make it have and well suppress stress ability.Further, embedding silicon rubber between outer pipe seat 10 ' and interior base 12 ', the stress produced when can discharge press-in.
In the present invention, described layer of passivation material 22 ' can adopt polyimides and additive material to make.Wherein, this additive is a kind of diluent, and as a kind of selectivity embodiment of the present invention, this diluent can select carboxyl organic substance.
In sum, diode of the present invention, be applicable to AC generator for vehicle and make three phase rectifier, also can be used for other rectifying device, be applicable to the making of heavy-duty diode, it adopts half epoxy resin half silicon rubber encapsulation to make, and makes this diode have good high temperature resistant, anti-vibration and anti-lead-in wire crooking ability simultaneously; And Stress Release ability is better during its press-in, has higher suppression stress ability during use, diode effectively can be avoided to be pressed into and to lose efficacy in use procedure, extending its useful life.
The above; for the person of ordinary skill of the art; can make other various corresponding change and distortion according to technical scheme of the present invention and technical conceive, and all these change and be out of shape the protection range that all should belong to the accompanying claim of the present invention.
Claims (6)
1. a diode, comprise base, be installed on the chip in base, and the diode lead be assemblied in above chip, it is characterized in that, also comprise the layer of passivation material being coated on chip surface, and to be fixed in base and to be sheathed on the plastic hoop of chip and diode lead periphery, epoxy resin layer is filled with inside this plastic hoop, position outside plastic hoop and between base is filled with silastic-layer, this epoxy resin layer is coated on outside chip and the root of diode lead, silastic-layer be coated on outside plastic hoop and diode lead root epoxy resin layer outside, described layer of passivation material adopts polyimides and additive material to make.
2. diode as claimed in claim 1, it is characterized in that, described chip is welded and fixed by solder and base, and diode lead is welded in above chip by solder.
3. diode as claimed in claim 1, it is characterized in that, described additive is a kind of diluent, and it includes carboxyl organic substance.
4. a diode, comprises chip and is assemblied in the diode lead on chip, it is characterized in that, also comprise an outer pipe seat, is fixedly installed on the interior base inside this outer pipe seat and is coated on the layer of passivation material of chip surface; Described chip is installed in interior base, epoxy resin layer is filled with inside this interior base, position outside interior base and between outer pipe seat is filled with silastic-layer, this epoxy resin layer is coated on outside chip and the root of diode lead, and silastic-layer is coated on outside interior base and outside the epoxy resin layer of diode lead root; Described layer of passivation material adopts polyimides and additive material to make.
5. diode as claimed in claim 4, it is characterized in that, described interior base is fixedly welded on outer pipe seat inside bottom by solder, and chip is fixedly welded on interior base inside bottom by solder, and diode lead is welded in above chip by solder.
6. diode as claimed in claim 4, it is characterized in that, described additive is a kind of diluent, and it includes carboxyl organic substance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210032647.3A CN102593190B (en) | 2012-02-13 | 2012-02-13 | A kind of diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210032647.3A CN102593190B (en) | 2012-02-13 | 2012-02-13 | A kind of diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102593190A CN102593190A (en) | 2012-07-18 |
| CN102593190B true CN102593190B (en) | 2015-11-25 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210032647.3A Active CN102593190B (en) | 2012-02-13 | 2012-02-13 | A kind of diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102593190B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110379862B (en) * | 2019-07-07 | 2023-03-07 | 陕西航空电气有限责任公司 | Silicon carbide diode and manufacturing method thereof |
| CN110289220A (en) * | 2019-07-07 | 2019-09-27 | 陕西航空电气有限责任公司 | A kind of 250 DEG C of junction temperature of silicon carbide diode chip insulation guard method |
| CN111928954A (en) * | 2020-07-27 | 2020-11-13 | 青岛凯瑞电子有限公司 | Miniature dewar of infrared detector |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN87108334A (en) * | 1986-12-19 | 1988-07-13 | 菲利浦光灯制造公司 | Reduce encapsulation stress and make the method for semiconductor device |
| CN101819952A (en) * | 2009-02-26 | 2010-09-01 | 株式会社日立制作所 | Semiconductor device |
| CN102263186A (en) * | 2010-05-28 | 2011-11-30 | 贵州雅光电子科技股份有限公司 | High reliable light-emitting diode and manufacturing method thereof |
| CN202736928U (en) * | 2012-02-13 | 2013-02-13 | 贵州雅光电子科技股份有限公司 | Diode |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08204066A (en) * | 1995-01-20 | 1996-08-09 | Fuji Electric Co Ltd | Semiconductor device |
| JP2002064165A (en) * | 2000-08-21 | 2002-02-28 | Hitachi Ltd | Diode and manufacturing method thereof |
| JP2006269848A (en) * | 2005-03-25 | 2006-10-05 | Hitachi Ltd | Semiconductor device |
-
2012
- 2012-02-13 CN CN201210032647.3A patent/CN102593190B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN87108334A (en) * | 1986-12-19 | 1988-07-13 | 菲利浦光灯制造公司 | Reduce encapsulation stress and make the method for semiconductor device |
| CN101819952A (en) * | 2009-02-26 | 2010-09-01 | 株式会社日立制作所 | Semiconductor device |
| CN102263186A (en) * | 2010-05-28 | 2011-11-30 | 贵州雅光电子科技股份有限公司 | High reliable light-emitting diode and manufacturing method thereof |
| CN202736928U (en) * | 2012-02-13 | 2013-02-13 | 贵州雅光电子科技股份有限公司 | Diode |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102593190A (en) | 2012-07-18 |
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Denomination of invention: Inhibition method for diode reverse recovery current and its circuit Effective date of registration: 20170116 Granted publication date: 20151125 Pledgee: Bank of Guiyang Limited by Share Ltd. high tech branch Pledgor: GUIZHOU YAGUANG ELECTRONICS TECHNOLOGY Co.,Ltd. Registration number: 2017990000037 |
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Denomination of invention: a diode Effective date of registration: 20220815 Granted publication date: 20151125 Pledgee: Industrial Bank Co.,Ltd. Guiyang Branch Pledgor: GUIZHOU YAGUANG ELECTRONICS TECHNOLOGY Co.,Ltd. Registration number: Y2022520000036 |
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Date of cancellation: 20230609 Granted publication date: 20151125 Pledgee: Industrial Bank Co.,Ltd. Guiyang Branch Pledgor: GUIZHOU YAGUANG ELECTRONICS TECHNOLOGY Co.,Ltd. Registration number: Y2022520000036 |
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Denomination of invention: A diode Effective date of registration: 20230628 Granted publication date: 20151125 Pledgee: Industrial Bank Co.,Ltd. Guiyang Branch Pledgor: GUIZHOU YAGUANG ELECTRONICS TECHNOLOGY Co.,Ltd. Registration number: Y2023520000029 |