CN102576731B - 高驱动电流mosfet - Google Patents
高驱动电流mosfet Download PDFInfo
- Publication number
- CN102576731B CN102576731B CN201080048042.2A CN201080048042A CN102576731B CN 102576731 B CN102576731 B CN 102576731B CN 201080048042 A CN201080048042 A CN 201080048042A CN 102576731 B CN102576731 B CN 102576731B
- Authority
- CN
- China
- Prior art keywords
- conductivity
- region
- dopant
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 93
- 239000000758 substrate Substances 0.000 claims abstract description 92
- 238000000034 method Methods 0.000 claims abstract description 40
- 239000002019 doping agent Substances 0.000 claims description 60
- 239000012212 insulator Substances 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 24
- 238000002513 implantation Methods 0.000 claims description 18
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 12
- 229910052796 boron Inorganic materials 0.000 claims description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 8
- 229910052698 phosphorus Inorganic materials 0.000 claims description 8
- 239000011574 phosphorus Substances 0.000 claims description 8
- 239000004411 aluminium Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 238000002955 isolation Methods 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052787 antimony Inorganic materials 0.000 claims description 6
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052785 arsenic Inorganic materials 0.000 claims description 6
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000011065 in-situ storage Methods 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims 2
- 239000010410 layer Substances 0.000 description 47
- 230000005669 field effect Effects 0.000 description 33
- 238000005229 chemical vapour deposition Methods 0.000 description 18
- 239000004020 conductor Substances 0.000 description 18
- 238000000151 deposition Methods 0.000 description 16
- 230000008569 process Effects 0.000 description 11
- 239000002800 charge carrier Substances 0.000 description 10
- 239000003795 chemical substances by application Substances 0.000 description 9
- 230000008021 deposition Effects 0.000 description 9
- 238000005530 etching Methods 0.000 description 9
- 238000001020 plasma etching Methods 0.000 description 8
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 125000006850 spacer group Chemical group 0.000 description 7
- 238000000137 annealing Methods 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 239000007943 implant Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910021332 silicide Inorganic materials 0.000 description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 5
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000004151 rapid thermal annealing Methods 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 229910052914 metal silicate Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 108010022579 ATP dependent 26S protease Proteins 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 229910003811 SiGeC Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- NRCKPUWWRHKANR-UHFFFAOYSA-N [O].[N].[Si].[Hf] Chemical compound [O].[N].[Si].[Hf] NRCKPUWWRHKANR-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000224 chemical solution deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 229920000592 inorganic polymer Polymers 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7394—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET on an insulating layer or substrate, e.g. thin film device or device isolated from the bulk substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8248—Combination of bipolar and field-effect technology
- H01L21/8249—Bipolar and MOS technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/607,116 | 2009-10-28 | ||
US12/607,116 US8120058B2 (en) | 2009-10-28 | 2009-10-28 | High-drive current MOSFET |
PCT/US2010/052989 WO2011056391A2 (en) | 2009-10-28 | 2010-10-18 | High-drive current mosfet |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102576731A CN102576731A (zh) | 2012-07-11 |
CN102576731B true CN102576731B (zh) | 2014-11-05 |
Family
ID=43897645
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201080048042.2A Expired - Fee Related CN102576731B (zh) | 2009-10-28 | 2010-10-18 | 高驱动电流mosfet |
Country Status (5)
Country | Link |
---|---|
US (1) | US8120058B2 (zh) |
CN (1) | CN102576731B (zh) |
DE (1) | DE112010004205T5 (zh) |
GB (1) | GB2487158A (zh) |
WO (1) | WO2011056391A2 (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104282734B (zh) * | 2014-09-24 | 2018-02-06 | 上海华虹宏力半导体制造有限公司 | 与cmos工艺兼容的沟道隔离的原生器件及其制造方法 |
US9391204B1 (en) | 2015-03-12 | 2016-07-12 | International Business Machines Corporation | Asymmetric FET |
GB2556313B (en) * | 2016-02-10 | 2020-12-23 | Flexenable Ltd | Semiconductor patterning |
US10658390B2 (en) * | 2018-07-10 | 2020-05-19 | Globalfoundries Inc. | Virtual drain for decreased harmonic generation in fully depleted SOI (FDSOI) RF switches |
CN110243104B (zh) * | 2019-05-17 | 2020-10-02 | 华中科技大学 | 一种分段式结构的半导体制冷片 |
CN111900087B (zh) * | 2020-08-31 | 2022-09-20 | 华虹半导体(无锡)有限公司 | Igbt器件的制造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5247200A (en) * | 1989-02-16 | 1993-09-21 | Kabushiki Kaisha Toshiba | MOSFET input type BiMOS IC device |
US6404012B1 (en) * | 1997-11-13 | 2002-06-11 | Nec Corporation | Semiconductor device having a reverse conductive type diffusion layer in an extended drain diffusion layer |
CN101055851A (zh) * | 2006-04-11 | 2007-10-17 | 国际商业机器公司 | 互补金属氧化物半导体及其形成方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR910006249B1 (ko) * | 1983-04-01 | 1991-08-17 | 가부시기가이샤 히다찌세이사꾸쇼 | 반도체 장치 |
US6911694B2 (en) * | 2001-06-27 | 2005-06-28 | Ricoh Company, Ltd. | Semiconductor device and method for fabricating such device |
US6649983B2 (en) * | 2001-11-30 | 2003-11-18 | Texas Instruments Incorporated | Vertical bipolar transistor formed using CMOS processes |
JP2004228466A (ja) | 2003-01-27 | 2004-08-12 | Renesas Technology Corp | 集積半導体装置およびその製造方法 |
US20090114950A1 (en) | 2004-05-25 | 2009-05-07 | Koninklijke Philips Electronics N.V. | Semiconductor Device and Method of Manufacturing such a Device |
JP4524298B2 (ja) | 2007-06-04 | 2010-08-11 | パナソニック株式会社 | 半導体装置の製造方法 |
DE102008016439A1 (de) * | 2008-03-31 | 2009-10-01 | Advanced Micro Devices, Inc., Sunnyvale | SOI-Transistor mit potentialfreiem Körper für die Informationsspeicherung mit asymmetrischen Drain/Source-Gebieten |
-
2009
- 2009-10-28 US US12/607,116 patent/US8120058B2/en not_active Expired - Fee Related
-
2010
- 2010-10-18 WO PCT/US2010/052989 patent/WO2011056391A2/en active Application Filing
- 2010-10-18 CN CN201080048042.2A patent/CN102576731B/zh not_active Expired - Fee Related
- 2010-10-18 GB GB1206425.9A patent/GB2487158A/en not_active Withdrawn
- 2010-10-18 DE DE112010004205T patent/DE112010004205T5/de not_active Withdrawn
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5247200A (en) * | 1989-02-16 | 1993-09-21 | Kabushiki Kaisha Toshiba | MOSFET input type BiMOS IC device |
US6404012B1 (en) * | 1997-11-13 | 2002-06-11 | Nec Corporation | Semiconductor device having a reverse conductive type diffusion layer in an extended drain diffusion layer |
CN101055851A (zh) * | 2006-04-11 | 2007-10-17 | 国际商业机器公司 | 互补金属氧化物半导体及其形成方法 |
Also Published As
Publication number | Publication date |
---|---|
GB201206425D0 (en) | 2012-05-30 |
WO2011056391A2 (en) | 2011-05-12 |
WO2011056391A3 (en) | 2011-08-04 |
US20110095333A1 (en) | 2011-04-28 |
DE112010004205T5 (de) | 2012-08-30 |
US8120058B2 (en) | 2012-02-21 |
CN102576731A (zh) | 2012-07-11 |
GB2487158A (en) | 2012-07-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101201489B1 (ko) | Soi 디바이스 제조 방법 | |
CN100369262C (zh) | 场效应晶体管、集成电路及制造方法 | |
JP6101689B2 (ja) | ゲート抵抗器とダイオード接続mosfetが統合されたパワーmosfet | |
JP4262433B2 (ja) | 半導体装置の製造方法 | |
US7846783B2 (en) | Use of poly resistor implant to dope poly gates | |
CN103477439B (zh) | 半导体装置及其制造方法 | |
CN102576731B (zh) | 高驱动电流mosfet | |
US6759731B2 (en) | Bipolar junction transistor and fabricating method | |
US20130049107A1 (en) | Trench semiconductor power device and fabrication method thereof | |
CN103050525B (zh) | Mosfet及其制造方法 | |
US7785974B2 (en) | Methods of employing a thin oxide mask for high dose implants | |
JPWO2011048800A1 (ja) | 半導体装置およびその製造方法 | |
CN101635262B (zh) | 一种锗基肖特基晶体管的制备方法 | |
CN101506978A (zh) | 互补型绝缘体上硅(soi)结式场效应晶体管及其制造方法 | |
US20050037558A1 (en) | Method for fabricating transistor having fully silicided gate | |
CN100411107C (zh) | 精密多晶硅电阻器工艺 | |
US7575967B2 (en) | Semiconductor integrated circuit device and a manufacturing method for the same | |
KR100554465B1 (ko) | SOI 기판 위에 구현된 SiGe BiCMOS 소자 및그 제조 방법 | |
US9478534B2 (en) | Lateral BiCMOS replacement metal gate | |
KR100741682B1 (ko) | 실리콘 게르마늄 바이시모스 소자의 제조 방법 | |
US20110281411A1 (en) | Method for manufacturing semiconductor device | |
TWI258805B (en) | Bipolar transistor, semiconductor device comprising the bipolar transistor and process for fabricating them | |
CN102867750A (zh) | Mosfet及其制造方法 | |
KR20000062635A (ko) | 상보형 금속 산화 반도체 장치용 2중 게이트 구조 제조 방법 | |
US6316319B1 (en) | Method of manufacturing a semiconductor device having shallow junctions |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20171025 Address after: Grand Cayman, Cayman Islands Patentee after: GLOBALFOUNDRIES INC. Address before: American New York Patentee before: Core USA second LLC Effective date of registration: 20171025 Address after: American New York Patentee after: Core USA second LLC Address before: American New York Patentee before: International Business Machines Corp. |
|
TR01 | Transfer of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20141105 Termination date: 20181018 |
|
CF01 | Termination of patent right due to non-payment of annual fee |