CN102569598A - Insulating substrate, method for manufacturing the substrate, optical module utilizing the substrate and liquid crystal display device utilizing the substrate - Google Patents
Insulating substrate, method for manufacturing the substrate, optical module utilizing the substrate and liquid crystal display device utilizing the substrate Download PDFInfo
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- CN102569598A CN102569598A CN2011102812113A CN201110281211A CN102569598A CN 102569598 A CN102569598 A CN 102569598A CN 2011102812113 A CN2011102812113 A CN 2011102812113A CN 201110281211 A CN201110281211 A CN 201110281211A CN 102569598 A CN102569598 A CN 102569598A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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Abstract
An insulating substrate, a manufacturing method thereof, a light source module using the same, and a liquid crystal display apparatus are provided to reduce the number of inter-metallic compounds on an anodic oxide film which is formed by performing an anodic oxidation process, thereby improving insulation and transparent properties. An insulating substrate (1) comprises an aluminum substrate (2) and a through-hole (3). The front surface, the rear surface of the aluminum substrate, and the inner surface of the through hole are coated with an anodic oxide film (4). The purity of aluminum of the aluminum substrate has 99.90 mass percent or greater. The through hole is formed by penetrating the aluminum substrate in a thickness direction. An edge part of an opening part of the trough hole is melted by performing a melting process after a through-hole formation process.
Description
Technical field
The present invention relates to a kind of insulated substrate used in light-emitting component, specifically, relate to light-emitting diode (below be called " LED ".) in used insulated substrate and manufacturing approach thereof and light source module and the liquid crystal indicator that uses it.
Background technology
In general, LED compares with fluorescent lamp, it is said that power consumption is 1/100, the life-span is 40 times (40000 hours).This kind power saving and long-life characteristic become the important key element that adopts LED in the middle of the trend of paying attention to environment.
Particularly White LED is owing to also having the color rendering excellence, comparing the easier advantage of power circuit with fluorescent lamp, and therefore the expectation as illumination light source improves gradually.
In recent years, (30～150lm/W) listings successively, the utilization ratio this point of the light during from practical application is considered, surpasses fluorescent lamp (20～110lm/W) as the high White LED of the desired luminous efficiency of illumination light source.
Like this, replace fluorescent lamp and to use the trend of White LED surging quickly, the situation that adopts White LED as the backlight or the illumination light source of liquid crystal indicator is also in continuous increase.
But should be understood that following problem, that is, if in led chip, flow through electric current in large quantities in order to realize high brightnessization; Then thermal discharge will increase; Thereby quicken wavelength Conversion with fluorophor support resin material through the time aging, consequently, sacrifice this characteristic of long-life.
In fact, in LED in the past, if long-time the driving or carried out high current drives in order to improve luminosity, then led chip heat release and the state that reaches a high temperature produces the such problem of heat ageing significantly.
In order to eliminate this kind problem; Insulated substrate (for example with reference to patent documentation 1～7) that the surface of aluminium base is covered with anodic oxide coating was proposed; Because anodic oxide coating has insulating properties, and aluminium base has high thermal conductivity, therefore is expected to obtain good thermal diffusivity.
The flat 11-504387 communique of the special table of patent documentation 4 Japan
Patent documentation 5 TOHKEMY 2006-344978 communiques
Patent documentation 6 TOHKEMY 2007-251176 communiques
Patent documentation 7 TOHKEMY 2009-164583 communiques
The inventor studies the insulated substrate of record in the patent documentation 1～7; The result understands fully; If install and use the element (for example LED, power chip etc.) that is provided with through hole and produces heat in large quantities; Then because as the aluminium base of the mother metal of insulated substrate and as the difference of the coefficient of thermal expansion between the anodic oxide coating of insulating barrier, crack near the anodic oxide coating the peristome of through hole or chap insulating properties (proof voltage) variation.
Summary of the invention
So, the objective of the invention is to, can keep good thermal diffusivity insulating properties is also very excellent when being used for the LED purposes insulated substrate and manufacturing approach thereof and light source module and the liquid crystal indicator that uses it even provide.
The inventor furthers investigate in order to reach above-mentioned purpose; The result finds; Through using the insulated substrate (aluminium base that has anodic oxide coating) that through hole is made as given shape,, thereby accomplished the present invention even when being used for the LED purposes, also can take into account insulating properties and thermal diffusivity.That is, the present invention provides following (1)～(10).
(1) a kind of insulated substrate, it is to possess aluminium base and run through the through hole of formation at the thickness direction of above-mentioned aluminium base, and the internal face of the surface of above-mentioned at least aluminium base and the back side and above-mentioned through hole covered by anodic oxide coating, wherein,
Maximum gauge (the d of above-mentioned through hole
0) and minimum diameter (d
r) satisfy following formula (I) with the relation of the thickness of slab (t) of above-mentioned insulated substrate.
0.5×t≤(d
0-d
r)＜t…(I)
(2) according to above-mentioned (1) described insulated substrate, wherein, the aluminium purity of above-mentioned aluminium base is more than the 99.90 quality %.
(3) according to the insulated substrate described in above-mentioned (1) or (2), it is used for the LED purposes.
(4) a kind of manufacturing approach of insulated substrate is a manufacturing approach of making the insulated substrate of each described insulated substrate in above-mentioned (1)～(3), and it has following operation:
Through hole forms operation, runs through the formation through hole at the thickness direction of aluminium base;
The dissolution process operation is implemented dissolution process after above-mentioned through hole forms operation, dissolve the marginal portion at least of the peristome of above-mentioned through hole; And
The anodized operation is implemented anodized after above-mentioned dissolution process operation, the surface of above-mentioned aluminium base and the internal face of the back side and above-mentioned through hole are covered with anodic oxide coating.
(5) according to the manufacturing approach of the insulated substrate described in above-mentioned (4), wherein, above-mentioned dissolution process is that photoetch is handled.
(6) according to the manufacturing approach of above-mentioned (4) or (5) described insulated substrate, wherein, after above-mentioned through hole forms operation and before the above-mentioned anodized operation, having can be with the singualtion operation of above-mentioned aluminium base with required shape singualtion.
(7) a kind of light source module, it possesses:
Each described insulated substrate in above-mentioned (1)～(3),
Be installed on above-mentioned aluminium base the surface light emitting source and
Be located at above-mentioned aluminium base the back side pass the wiring layer that above-mentioned through hole is electrically connected with above-mentioned light emitting source.
(8) according to above-mentioned (7) described light source module, wherein, above-mentioned light emitting source is LED.
(9) according to above-mentioned (7) or (8) described light source module, it is used for the back light unit purposes.
(10) a kind of liquid crystal indicator, it possesses: light source module described in above-mentioned (9) and the panel of LCD that is disposed at the light emitting side of above-mentioned light source module.
Shown in the following explanation,, keep good thermal diffusivity insulating properties is also very excellent when being used for the LED purposes insulated substrate and manufacturing approach thereof and light source module and the liquid crystal indicator that uses it even can provide according to the present invention.
Description of drawings
Fig. 1 is the generalized section of an example preferred embodiment of expression insulated substrate of the present invention.
Fig. 2 is the sketch map of the singualtion operation (path processing (Le one テ イ Application グ processing)) that is used for explaining the manufacturing approach of insulated substrate of the present invention.
Fig. 3 is the schematic cross sectional view of an example preferred embodiment of expression light source module of the present invention.
Fig. 4 representes other the schematic cross sectional view of preferred implementation of light source module of the present invention.
Fig. 5 representes other the schematic cross sectional view of preferred implementation of light source module of the present invention.
Fig. 6 is the schematic cross sectional view that expression is used for light source module of the present invention a mode of back light unit purposes.
Fig. 7 is the manuscript of the size of the insulated substrate (before the singualtion) made among the embodiment of expression etc.
Wherein,
1 insulated substrate of the present invention
2 aluminium bases
3 through holes
4 anodic oxide coatings
21 chips
22 notch parts
23 linking parts
31 insulated substrates of the present invention
32 light emitting sources
33 wiring layers
34 aluminium bases
35 through holes
36 anodic oxide coatings
40 lead-in wires
41 recesses
42 end faces
43 lens
44 diffusion sheets
Embodiment
[insulated substrate]
Below, insulated substrate of the present invention is elaborated.
Insulated substrate of the present invention is to possess aluminium base and run through the through hole of formation at the thickness direction of above-mentioned aluminium base, and the internal face of the surface of above-mentioned at least aluminium base and the back side and above-mentioned through hole is covered by anodic oxide coating, the maximum gauge (d of above-mentioned through hole
0) and minimum diameter (d
r) satisfy above-mentioned formula (I) with the relation of the thickness of slab (t) of above-mentioned insulated substrate.
Below, use Fig. 1, the formation of insulated substrate of the present invention is described.
Fig. 1 is the generalized section of an example preferred embodiment of expression insulated substrate of the present invention.
As shown in Figure 1, insulated substrate 1 of the present invention possesses aluminium base 2 and through hole 3, and the internal face of the surface of aluminium base 2 and the back side (in Fig. 1, also comprising end face) and through hole 3 is covered by anodic oxide coating 4 at least.
Below, aluminium base, through hole and the anodic oxide coating that constitutes insulated substrate of the present invention detailed.
< aluminium base >
As above-mentioned aluminium base, except the fine aluminium substrate, can also use with aluminium as principal component and contain the alloy sheets of xenogenesis element of trace; At the aluminium (for example salvage material) of the low-purity substrate of raffinal of having gone up vapor deposition; Covered the substrate of raffinal in methods such as the surface by utilizing vapor deposition of silicon wafer, quartz, glass etc., sputters; Lamination has the resin substrate of aluminium etc.
Here, as the xenogenesis element that also can be contained in the above-mentioned alloy sheets, can enumerate silicon, iron, copper, manganese, magnesium, chromium, zinc, bismuth, nickel, titanium etc., the content of the xenogenesis element in the alloy is preferably below the 10 quality %.
The thickness of above-mentioned aluminium base is not special to be limited, yet from the viewpoint of the low back of the bodyization of light source module of the present invention is considered, is preferably 0.2～0.5mm.And, through aluminium base being processed as required shape, can also tackle design alteration etc. flexibly.
In addition, the aluminium purity of above-mentioned aluminium base is high more good more.Specifically, aluminium purity is preferably more than the 99.90 quality %, more preferably more than the 99.99 quality %.
If aluminium purity is above-mentioned scope; It is very micro-that impurity such as the Si in the then above-mentioned aluminium base, Fe will become; The anodized of after enforcement, stating and in the anodic oxide coating that forms the number of remaining intermetallic compound reduce, it is good that the insulating properties and the transparency become.
The preferred ungrease treatment and the mirror finish implemented in advance of face of the anodized of stating after above-mentioned aluminium base is implemented in advance in addition.
Ungrease treatment is carried out from using acid, alkali, organic solvent etc. will be attached to the purpose that dissolvings such as organic principle such as dust on the aluminium base, grease, resin remove.In ungrease treatment, can use known in the past degreasing agent.Specifically, for example can be through using commercially available various degreasing agents to carry out with given method.
Mirror finish is concavo-convex for the face of eliminating aluminium base, and the impression striped that for example when the calendering of aluminium base, produces etc. carries out.Mirror finish is not special to be limited, and can use with known method.Specifically, for example can utilize mechanical lapping, chemical grinding, electrolytic polishing to carry out.
< through hole >
Above-mentioned through hole is the anodized after above-mentioned aluminium base is implemented, stated and before forming anodic oxide coating, runs through forming and be provided with at the thickness direction of above-mentioned aluminium base.
Like this, the internal face of above-mentioned through hole is also covered by anodic oxide coating.
And the number that forms above-mentioned through hole can change according to execution mode, therefore not special the qualification.
Among the present invention, above-mentioned through hole is near the thinner so-called bobbin shape central part of thickness direction of insulated substrate of the present invention, specifically, and the maximum gauge (d of above-mentioned through hole
0) and minimum diameter (d
r) satisfy following formula (I) with the relation of the thickness of slab (t) of above-mentioned insulated substrate.
0.5×t≤(d
0-d
r)＜t…(I)
Here, the so-called maximum gauge (d of through hole
0) also as shown in fig. 1, being meant the diameter at the surface and the back side of insulated substrate 1 of the present invention, i.e. the opening diameter of through hole under the opening diameter condition of different at the opening diameter on surface and the back side, is the less side's of exponential quantity a opening diameter.
In addition, the so-called minimum diameter (d of through hole
r) also as shown in fig. 1, be meant near the shortest diameter the central part of the thickness direction that is formed at insulated substrate 1 of the present invention.
In addition, thickness of slab (t) is also as shown in fig. 1, is meant the thickness of insulated substrate 1 of the present invention.
Through possessing the through hole that satisfies above-mentioned formula (I), keep good thermal diffusivity also very excellent insulated substrate of insulating properties when being used for the LED purposes even will form.
This can think because if through hole is a straight tube-like, come from the differing from of coefficient of thermal expansion of aluminium base and anodic oxide coating and position that stress is concentrated will be a lot, yet if through hole is the bobbin shape, then concentrating of above-mentioned stress just obtains alleviation.
And, with the maximum gauge (d of through hole
0) and minimum diameter (d
r) difference stipulate that with the relation of the thickness of slab (t) of insulated substrate the formation method of the wiring layer material of stating after considering in light source module of the present invention, to be located in the through hole (the for example copper etc.) filling of the processing of electrolysis plating (for example by) is carried out, if d
0-d
rValue be the over half of thickness of slab, then conducting reliability will be abundant, if less than thickness of slab, then can suppress the waste of wiring layer material.
In addition, among the present invention, the internal face of above-mentioned through hole does not preferably have the flexing face with the angle below 90 degree, more preferably constitutes by flexure plane or by flexure plane and even surface.
In addition, among the present invention, the shape of above-mentioned through hole is so long as satisfy above-mentioned formula (I); Be can be with the essential distribution size (minimum diameter) wherein of packing into; Just not special the qualification, however if consider the formation of the size of final chip or more reliable distribution, be preferably 0.01～2mm φ; More preferably 0.05～1mm φ is preferably 0.1～0.8mm φ especially.
< anodic oxide coating >
Above-mentioned anodic oxide coating is the oxide scale film with the internal face covering of the surface of above-mentioned aluminium base and the back side and above-mentioned through hole, is to form through the anodized of stating after the above-mentioned aluminium base that is formed with above-mentioned through hole is implemented.
Consider that from the viewpoint of insulating properties the thickness of above-mentioned anodic oxide coating is preferably 5～75 μ m, more preferably 10～50 μ m.
[manufacturing approach of insulated substrate]
Below, the manufacturing approach of insulated substrate of the present invention is elaborated.
The manufacturing approach of insulated substrate of the present invention has: through hole forms operation, runs through the formation through hole at the thickness direction of above-mentioned aluminium base; The dissolution process operation is implemented dissolution process after above-mentioned through hole forms operation, dissolve the marginal portion at least of the peristome of above-mentioned through hole; The anodized operation is implemented anodized after above-mentioned dissolution process operation, the surface of above-mentioned aluminium base and the internal face of the back side and above-mentioned through hole are covered with anodic oxide coating.
Below, through hole is formed operation, dissolution process operation and anodized operation and can describe according to required other treatment process of implementing.
< through hole formation operation >
It is that thickness direction at above-mentioned aluminium base runs through the operation that forms above-mentioned through hole that above-mentioned through hole forms operation.
When forming above-mentioned through hole, can adopt known method in the past, for example can use following detailed description boring processing, (be designated hereinafter simply as " Mould Machining " by the stamping-out processing of mould.), Wet-type etching processing etc.
In addition, when forming above-mentioned through hole, the volumetric expansion of the above-mentioned aluminium base in the anodized operation of stating after considering preferably forms with the diameter more bigger than the aperture of target.
(boring processing)
Above-mentioned boring method for processing is not special to be limited, and can use known in the past printed board processing machine to process.For example, consider, preferably use the printed board sharp processing machine of putting down in writing in [0012]～[0015] section and the accompanying drawing of TOHKEMY 2006-339318 communique to come method for processing from the viewpoint that improves operating efficiency.
(Mould Machining)
Above-mentioned Mould Machining is not special to be limited, and can utilize by the known method in the past of shearing stamping-out and process.Based on the reason of the generation of the burr of the peristome periphery that can suppress to be formed at through hole, stamping-out processing of record among [0043] section of preference such as TOHKEMY 2010-182719 communique and [Figure 11].
(Wet-type etching processing)
Above-mentioned Wet-type etching processing is not special to be limited, and can be utilized in known in the past engraving method used in the manufacturing of semiconductor device with etching parts such as lead frame or high meticulous shades and process.Based on can be with the reason of through hole thin spaceization, the sheet metal processing method of putting down in writing in preference such as the TOHKEMY 2003-277955 communique.
And; Among the present invention; Be accompanied by under the situation of dissolution process (for example alkaline etching processing, photoetch processing etc.) in above-mentioned Wet-type etching processing; Since can be when forming through hole with the marginal portion dissolving of the peristome of through hole, therefore can be described as and side by side implement above-mentioned through hole and form operation and above-mentioned dissolution process operation.
< dissolution process operation >
Above-mentioned dissolution process operation is after above-mentioned through hole forms operation, to implement dissolution process and with the operation of the dissolving of marginal portion at least of the peristome of above-mentioned through hole.
As above-mentioned dissolution process, for example can enumerate chemical grinding processing, electrolytic polishing processing, alkaline etching processing, photoetch processing of following detailed description etc.
(chemical grinding processing)
Handle as above-mentioned chemical grinding, for example can enumerate the whole bag of tricks of " aluminium handbook ", sixth version, (society) Japanese aluminium association volume, calendar year 2001, p.164-165 middle record etc.
In addition, illustration goes out phosphoric acid-nitrate method, Alupol I method, Alupol V method, Alcoa R5 method, H suitably
3PO
4-CH
3COOH-Cu method, H
3PO
4-HNO
3-CH
3The COOH method.Wherein, preferably phosphoric acid-nitrate method, H
3PO
4-CH
3COOH-Cu method, H
3PO
4-HNO
3-CH
3The COOH method.
(electrolytic polishing processing)
As the suitable method that above-mentioned electrolytic polishing is handled, for example can enumerate " aluminium handbook ", sixth version, (society) Japanese aluminium association volume, calendar year 2001, p.164-165 in the whole bag of tricks of record; The method of putting down in writing in No. 2708655 specification of United States Patent (USP); " practice sufacing ", vol.33, No.3,1986, p.32-38 in the method etc. of record.
(alkaline etching processing)
It is the processing that makes the above-mentioned aluminium base contact aqueous slkali that is formed with above-mentioned through hole that above-mentioned alkaline etching is handled.
Here, as alkali used in the aqueous slkali, for example can enumerate caustic alkali, alkali metal salt.Specifically, as caustic alkali, for example can enumerate caustic soda, caustic potash.In addition, as alkali metal salt, for example can enumerate alkali silicates such as sodium metasilicate, sodium metasilicate, potassium metasilicate, potassium silicate; Alkali carbonate such as sodium carbonate, potash; Alkali metal aluminate such as sodium aluminate, potassium aluminate; Alkali metal aldehyde such as gluconic acid sodium salt, K-IAO sugar lime; Alkali metal hydrogen phosphates such as sodium dihydrogen phosphate, potassium hydrogen phosphate, sodium phosphate, potassium phosphate.Wherein, from the fast aspect of etching speed and cheap aspect consider the solution of preferred caustic alkali and contain caustic alkali and the solution of alkali metal aluminate.The aqueous solution of preferred especially caustic soda.
In addition, the concentration of aqueous slkali can decide according to etch quantity, yet is preferably 1～50 quality %, more preferably 10～35 quality %.In aqueous slkali, be dissolved with under the aluminum ions situation, aluminum ions concentration is preferably 0.01～10 quality %, more preferably 3～8 quality %.The temperature of aqueous slkali is preferably 20～90 ℃.Processing time is preferably 1～120 second.
In addition, as the method that makes aluminium sheet contact aqueous slkali, for example can enumerate method that aluminium sheet is passed in the groove that has added aqueous slkali, aluminium sheet impregnated in method in the groove that has added aqueous slkali, with the method for aqueous slkali to the jet surface of aluminium sheet.
(photoetch processing)
The processing method that has been to use photosensitive resin is handled in above-mentioned photoetch.
Be following method specifically; Promptly; At the surface coated photosensitive resin of the above-mentioned aluminium base that is formed with above-mentioned through hole, implement to utilize the exposure of the light that passes the photo master or utilize the direct exposure of laser etc., the photosensitive resin of the peristome of above-mentioned through hole and periphery thereof is developed remove; Implement the etch processes of chemistry thereafter.
Through implementing the etch processes of chemistry,, just can form the bobbin shape when when the section of above-mentioned aluminium base is observed above-mentioned through hole.
< anodized operation >
Above-mentioned anodized operation is after above-mentioned dissolution process operation, the operation that the internal face of the surface of above-mentioned aluminium base and the back side and above-mentioned through hole is covered with above-mentioned anodic oxide coating.
Here, above-mentioned anodized is not special to be limited, and can use the known in the past anodized that aluminium base is implemented.Except insulating properties, also requiring preferably will to be present in the regularly arrangedization combination of the micropore in the above-mentioned anodic oxide coating under the situation of the transparency for above-mentioned anodic oxide coating.
< singualtion operation >
In the manufacturing approach of insulated substrate of the present invention, also can also possess the singualtion operation.
Above-mentioned singualtion operation is after above-mentioned through hole forms operation and before the above-mentioned anodized operation; Can be with the operation of above-mentioned aluminium base with required shape (for example to the shape of the additional essential allowance of final products etc.) singualtion, the path of stating after can utilizing processing (Le one テ イ Application グ processing), Mould Machining etc. are carried out singualtion.And, as after shown in the embodiment that states, no matter above-mentioned singualtion operation so long as after above-mentioned through hole forms operation, be before above-mentioned dissolution process operation, to implement then, still enforcement can above-mentioned dissolution process operation after.
Below, use Fig. 2, the path processing as suitable method is described.
Path processing is carried out for the chip 21 (with reference to Fig. 2 (B)) that acquisition the tabular aluminium base 2 (with reference to Fig. 2 (A)) that has through hole 3 from the position in regulation has 2 through holes 3.
In the processing of path, around each chip 21, form the notch part 22 (with reference to Fig. 2 (B)) that runs through aluminium base 2.At this moment, from aluminium base 2, do not cut away and become scattered here and there based on chip 21, the reason that can chip 21 and aluminium base 2 be disposed integratedly, preferred residual have a linking part 23 that links between the different chip 21 or with chip 21 and aluminium base 2.
After this, after the processing of path, implement above-mentioned anodized (with reference to Fig. 2 (C)),, can obtain chip 21 (with reference to Fig. 2 (D)) as insulated substrate through cutting away linking part 23.
The size of in addition, in above-mentioned singualtion operation, carrying out singualtion need be considered the size or the shape of final chip.For example, under the situation of the chip that is envisioned for square type, consider that from the compactedness of chip and the viewpoint of processing applicability preferred 1 limit is 0.1～50mm, more preferably 0.2～40mm is preferably 0.4～30mm especially.Particularly, under the situation of the reflection substrate that is envisioned for master component (main package) usefulness, preferably to carry out path processing as sizes such as the routine 3.2mm * 2.8mm of present shape criteria, 1.6mm * 0.8mm.
< other operations >
The manufacturing approach of insulated substrate of the present invention is preferably (possessing under the situation of above-mentioned singualtion operation is after this operation) before the above-mentioned anodized operation, possesses above-mentioned aluminium base is implemented to remove the grade etch processes operation of the etch processes that is purpose of deburring, processing oil.
No matter etch processes is that acid treatment fluid or alkaline treatment fluid can use, and for example can use phosphoric acid, sodium hydroxide solution etc.The cleaning agent that at this moment, also can with an organic solvent be simultaneously.
In addition; The manufacturing approach of insulated substrate of the present invention is preferably after above-mentioned etch processes operation and before above-mentioned anodized operation; Start from the inhomogeneity purpose when guaranteeing anodized, possess the washing step of comprehensively fully washing above-mentioned aluminium base.
After this, after washing, before anodized, for adhering to of the formation that suppresses the autoxidation epithelium and airborne impurity, preferred not comprehensively being exposed in the air with above-mentioned aluminium base.
[light source module]
Below, light source module of the present invention is elaborated.
Light source module of the present invention be possess above-mentioned insulated substrate of the present invention, be installed on above-mentioned aluminium base the surface light emitting source and be located at the light source module that passes the wiring layer that above-mentioned through hole is electrically connected with above-mentioned light emitting source at the back side of above-mentioned aluminium base.
Below, use Fig. 3～Fig. 6 that the formation of light source module of the present invention is described.
As shown in Figure 3, light source module 30 of the present invention possesses above-mentioned insulated substrate of the present invention 31, light emitting source 32 and wiring layer 33.
And; Though in Fig. 3; The inside of through hole 35 is all filled by the material that forms wiring layer 33, yet in the present invention, is electrically connected so long as light emitting source 32 passes through hole 35 with wiring layer 33; Just be not defined in the mode shown in Fig. 3 especially, yet preferably projected electrode (not shown) be set in light emitting source 32 and wiring layer 33 and the mode (flip-chip installation) of joint.
Fig. 4～5 are respectively other the schematic cross sectional view of suitable execution mode of expression light source module of the present invention.
As shown in Figure 4, light emitting source 32 also can be with having used 40 the wire-bonded of going between to be installed on the insulated substrate 31 of the present invention.
In addition; As shown in Figure 5, based on the reason that reflecting properties becomes more good, the surface of preferred insulated substrate 31 of the present invention has recess 41; Light emitting source 32 is located in the recess 41, and light-emitting area is identical height with the first type surface (reflecting surface) of the aluminium base that has anodic oxide coating 31.
Fig. 6 is the schematic cross sectional view that expression is used for light source module of the present invention a mode of back light unit purposes.
As shown in Figure 6, based on the reason that light characteristic becomes good, preferably the upper face at light emitting source 32 is provided with lens 43 again.
In addition, the reason based on light characteristic becomes more good preferably also possesses diffusion sheet 44 on the top of lens 43, more preferably between lens 43 and diffusion sheet 44, also possesses LGP 45.
Below, to the light emitting source beyond the above-mentioned insulated substrate of the present invention, wiring layer etc., will describe material, size, formation method etc.
< light emitting source >
The light emitting source that light source module of the present invention possessed is not special to be limited, and both can be merely luminescence chip, also can be the assembly that comprises luminescence chip, radiator, leading part and mould portion.
As above-mentioned luminescence chip, be preferably the LED that when applying power supply, when producing light, produces heat as semiconductor element.
In addition; The material formation that above-mentioned luminescence chip uses that used GaN in the electronic devices such as AlGaIn system used in the red laser diode element of the GaAlAs system that comprises active layer and the covering that coats it, high density compact disc, AlGaInP system, AlGaInPAs system, transistor is etc. and so on; Yet be not limited thereto, can use other semi-conducting material to constitute variedly.
The method that above-mentioned light emitting source is installed on the surface of the above-mentioned aluminium base that has a film is accompanied by the installation by heating; And in comprising the thermo-compressed and the installation method by flip-chip that scolding tin refluxes; From implementing evenly and the viewpoint of installing reliably consideration; Be up to Da Wendu and be preferably 220～350 ℃, more preferably 240～320 ℃, be preferably 260～300 ℃ especially.
As keeping the time that these are up to Da Wendu, based on identical viewpoint, be preferably 2 seconds～10 minutes, more preferably 5 seconds～5 minutes, be preferably 10 seconds especially～3 minutes.
In addition; Cause and the viewpoint in the crack that in anodic oxide coating, produces is considered by thermal expansion rate variance from suppressing with anodic oxide coating; Also can adopt following method; That is, arrive above-mentioned be up to Da Wendu before, implement 5 seconds～10 minutes, more preferably 10 seconds～5 minutes, preferred especially 20 seconds～3 minutes heat treatment with required uniform temperature.As required uniform temperature, be preferably 80～200 ℃, more preferably 100～180 ℃, be preferably 120～160 ℃ especially.
In addition, the temperature during as the installation that utilizes wire-bonded is considered from the viewpoint of implementing to install reliably, preferred 80～300 ℃, and more preferably 90～250 ℃, preferred especially 100～200 ℃.As heating time, preferred 2 seconds～10 minutes, more preferably 5 seconds～5 minutes, preferred especially 10 seconds～3 minutes.
< wiring layer >
The wiring layer that light source module of the present invention possessed is the part that is used to drive above-mentioned light emitting source, is located at the back side of insulated substrate of the present invention.
The material of above-mentioned wiring layer is so long as the raw material of energising; Just not special the qualification as its concrete example, can be enumerated gold (Au), silver (Ag), copper (Cu), aluminium (Al), magnesium (Mg), nickel (Ni) etc.; They both can use a kind separately, also can be also with more than 2 kinds.
In the middle of them,, preferably use Cu based on the low reason of resistance.
In addition, for the thickness of above-mentioned wiring layer, consider that from the viewpoint of the compactedness of conducting reliability and assembly be preferably 5～100 μ m, more preferably 10～50 μ m are preferably 15～40 μ m especially.
Formation method as above-mentioned wiring layer; Except various platings such as the electrolysis plating is handled, electroless plating applies and handles, the processing of displacement plating were handled, the vacuum that can also enumerate sputter process, vapor deposition treatment, metal forming attached and handles, is provided with the bonding processing of adhesive linkage etc.
In the middle of them, consider that the layer that preferably is merely metal forms, consider that the layer of preferably handling by plating forms from the viewpoint of thick film/even formationization and high adaptation from the viewpoint that thermal endurance is high.
Above-mentioned plating is handled owing to be to handle to the plating of non-conductive material (anodic oxide coating), and therefore preferred the use utilizes this metal level to form the method for thick metal level after setting is known as the reducing metal layer of Seed Layer.
In addition; In the formation of above-mentioned Seed Layer; The preferred electroless plating that uses applies, as plating bath, and the preferred solution that constitutes by principal component (for example slaine, reducing agent etc.) and auxiliary element (for example pH adjustment agent, buffer, complexing agent, promoter, stabilizer, modifying agent etc.) that uses.And; As plating bath, can suitably use SE-650666680, SEK-670797, SFK-63 (all being Japanese Kanigen corporate system), Melplate NI-4128, Enplate NI-433, Enplate NI-411 commercially available article such as (all being the Meltex corporate system).
In addition, used at material under the situation of copper, can use with sulfuric acid, copper sulphate, hydrochloric acid, polyethylene glycol and surfactant as principal component and be added with the various electrolyte of other various additives as above-mentioned wiring layer.
The wiring layer quilt that so forms utilizes known method to form pattern with the design of the light emitting source on the surface that is installed on the above-mentioned aluminium base that has a film accordingly.
< lens >
In the light source module of the present invention (back light unit purposes), be located at the upper face of above-mentioned light emitting source according to the required lens that possess.
Said lens is preferably the lens that the mode with the incidence angle that can further widen or concentrate the light that penetrates from above-mentioned light emitting source designs.
< diffusion sheet >
Light source module of the present invention (back light unit purposes) according to the required diffusion sheet that possesses be located at said lens top and after the bottom of the LCD panel stated.
The mode of above-mentioned diffusion sheet can be range upon range of also light diffusing sheet or thermal diffusion sheet etc. specifically, for example can be enumerated the diffusion sheet of putting down in writing in the TOHKEMY 2010-73476 communique.
< LGP >
Light source module of the present invention (back light unit purposes) is located between said lens and the above-mentioned diffusion sheet according to the required LGP that possesses, and has to make the function that reflects as area source from the light of above-mentioned light emitting source incident.
[liquid crystal indicator]
Liquid crystal indicator of the present invention is the liquid crystal indicator of LCD panel that possesses above-mentioned light source module of the present invention (back light unit purposes) and be disposed at the light emitting side of above-mentioned light source module.
Here, the LCD panel is not special to be limited, can be from suitably selected to use the known panel in the past.
[embodiment]
Below, provide embodiment and the present invention is specified.But the present invention is not limited to them.
(embodiment 1)
<boring processing (through hole formation operation) >
At first; To aluminium purity is the aluminium base (Japanese light metal corporate system, thick 0.4mm) of 99.95 quality %; Use printed board sharp processing machine (NR-G type, the BIAMECHANICS of Hitachi corporate system); Under the condition of bit diameter 0.8mm, drill bit translational speed 0.2m/min, implement processing, form 20 through holes (aperture 0.8mm φ).
And, adding man-hour, from the purpose that suppresses burr, at the thin plate (0.8mmt) of the bakelite that superposes up and down of the aluminium base that becomes processing object be coated with the thin plate aluminium (Kobe Steel's corporate system) of hydrophilic resin and process.
< electrolytic polishing is handled (dissolution process operation) >
Then, above-mentioned through hole is formed the aluminium base after the operation, use the nitration mixture of phosphoric acid and sulfuric acid, under the condition of 65 ℃ of temperature, voltage 10, implements electrolytic polishing processing in 300 seconds, the marginal portion of the peristome of above-mentioned through hole is dissolved.
< path processing (singualtion operation) >
Then,, implement path processing, can turn to 10 chips by monolithic the aluminium base after the above-mentioned dissolution process operation.
< anodized operation >
Then; To the aluminium base after the above-mentioned singualtion operation; Use the electrolyte of 0.30mol/L sulfuric acid; Under the condition of voltage 25V, 17 ℃ of liquid temperature, flow velocity 3.0m/min, implement 8 hours anodized, obtain having covered comprehensive insulated substrate (before the singualtion) by the uniform anodic oxide coating of thick 45 μ m.And in the anodized, negative electrode has adopted stainless steel electrode, and power supply has used GP0110-30R (high sand is made institute's corporate system).In addition, in cooling device, use NeoCool BD36 (Yamato scientific company system), in stirring heating apparatus, used PairstirrerPS-100 (EYELA corporate system).In addition, the flow velocity of electrolyte is to use turbine meter FLM22-10PCW (AS ONE system) instrumentation.
The manuscripts such as size of the insulated substrate (before the singualtion) of gained are shown among Fig. 7.And as shown in Figure 7, the aperture of final through hole 3 is 0.8mm.
(embodiment 2)
Except the dissolution process operation being replaced with the alkaline etching shown in following handles, utilize and made insulated substrate with embodiment 1 identical method.
< alkaline etching is handled (dissolution process operation) >
Above-mentioned through hole is formed aluminium base after the operation implement impregnated in the aqueous solution that caustic soda concentration is 1 quality % (liquid temperature: 40 ℃) 40 seconds alkaline etching and handle, the marginal portion of the peristome of above-mentioned through hole is dissolved.
(embodiment 3)
Except using aluminium purity is the aluminium base (Japanese light metal corporate system, thick 0.8mm) of 99.99 quality %, utilizes and has made insulated substrate with embodiment 2 identical methods.
(embodiment 4)
Except the singualtion operation being replaced with the Mould Machining shown in following, implemented electrolytic polishing processing (dissolution process operation) afterwards in addition in Mould Machining (singualtion operation), utilize and made insulated substrate with embodiment 1 identical method.
< Mould Machining (singualtion operation) >
At first, use Yamaha Finetech corporate system Trim Puncher T302, made the mould that adapts to.
Aluminium base to after the above-mentioned through hole formation operation uses above-mentioned mould to implement stamping-out processing, and is identical with embodiment 1, can turn to 10 chips by monolithic.
(embodiment 5)
Except using aluminium purity is the aluminium base (Japanese light metal corporate system, thick 0.4mm) of 99.99 quality %, utilizes and has made insulated substrate with embodiment 4 identical methods.
(embodiment 6)
Except replacing with the Wet-type etching processing shown in following through through hole being formed operation, form operation and dissolution process operation and implement through hole simultaneously, not implement beyond electrolytic polishing handles, utilization has been made insulated substrate with embodiment 1 identical method.
< Wet-type etching processing (through hole forms operation and dissolution process operation) >
At first, behind the oil content on the surface that utilizes aqueous alkali to remove to be attached to the aluminium base that aluminium purity is 99.95 quality % (Japanese light metal corporate system, thick 0.4mm) etc., implement to have used the neutralisation treatment of acidic aqueous solution.And this neutralisation treatment also has the function of whole processing of following conduct,, when the coating photoresist (insulating barrier) that carries out thereafter, improves the adaptation on photoresist and aluminium base surface that is.
Then, use dry type film resist (DFR) with cutting laminator automatically, the insulating barrier (epoxy resin, thickness: 10 μ m, ABF GX-13, aginomoto Finetechno corporate system) that will remove diaphragm is attached to the two sides of aluminium base.
After attaching insulating barrier, utilize adding pressure type vacuum laminator (Nichigo Morton corporate system V130), under 180 ℃, 30 minutes condition, carry out pad pasting, slowly behind the cool to room temperature, peel off the tread support membrane (PET) that supports insulating barrier originally.
Then, the glass mask driving fit of light-shielding pattern that will be formed with regulation is carried out pattern exposure on aluminium base surface through irradiation ultraviolet radiation, and the insulating barrier in the zone beyond the light-shielding pattern portion of glass mask is solidified.
Then, develop through spraying 30 ℃, 1% aqueous sodium carbonate, remove unexposed epoxy resin after, and with the further solid membranization of heating of remaining insulating barrier.
Then, as mask, use etching solution (mixed solution of copper chloride/hydrochloric acid) dissolving to remove aluminium the photoresist on the two sides that is formed at aluminium base, form 20 through holes (aperture 0.8mm φ).
At last, unwanted photoresist impregnated in the liquid of hydramine system remove.
(embodiment 7)
Except afterwards in above-mentioned Wet-type etching processing (through hole formation operation), implemented to handle (dissolution process operation) in addition with embodiment 1 identical electrolytic polishing, utilize and made insulated substrate with embodiment 6 identical methods.
(comparative example 1)
Do not handle (dissolution process operation) except implementing electrolytic polishing, utilize and made insulated substrate with embodiment 1 identical method.
(comparative example 2)
Except the time change with the electrolytic polishing processing is 30 seconds, utilizes and made insulated substrate with embodiment 1 identical method.
(comparative example 3)
Except having used aluminium purity is the aluminium base (Japanese light metal corporate system, thick 0.8mm) of 99.99 quality %, utilizes and has made insulated substrate with embodiment 1 identical method.
<maximum gauge (the d of through hole
0) and minimum diameter (d
r) poor>
To each insulated substrate of made, measure the maximum gauge (d of each through hole
0) and minimum diameter (d
r) poor (d
0-d
r), calculate mean value.The result is shown in the table 1.
< having or not of crackle be full of cracks >
With the insulated substrate of made respectively monolithic turn to 10.
With singualtion insulated substrate (chip) in the ceramic box of mullite system, be placed on the zircon ceramic pearl that is filled with diameter 1mm, with each ceramic box put into be warmed up in advance 200 the degree electric furnace, keeps after 1 hour, the taking-up, natural cooling.And the zircon ceramic pearl is in order to eliminate the expansion that caused by heat, to be contracted in the influence that contact is restricted and to use.
After the cooling; Utilize visual and observation by light microscope to estimate the outward appearance of 10 chips, crack near the anodic oxide coating of the investigation peristome of through hole or the number of the chip that chaps, with being evaluated as more than 8 *; The △ that is evaluated as with 4～7; With 2～3 zero △ that is evaluated as, with 1 be evaluated as zero, with 0 the ◎ that is evaluated as.
<breakdown voltage >
For the insulated substrate of gained, according to the method for JISC2110 standard, instrumentation goes out breakdown voltage (proof voltage).The result is shown in the table 1.
(table 1)
The 1st table
Can know according to the result shown in the table 1, if the maximum gauge (d of each through hole
0) and minimum diameter (d
r) poor (d
0-d
r) over half less than thickness of slab, then cracking near the anodic oxide coating the peristome of through hole or the chip-count that chaps will reduce, insulating properties (proof voltage) also can improve.
Claims (10)
1. insulated substrate, it possesses aluminium base and runs through the through hole of formation at the thickness direction of said aluminium base, and the internal face of the surface of said at least aluminium base and the back side and said through hole covered by anodic oxide coating, wherein,
The maximum diameter d of said through hole
0And minimum diameter d
rSatisfy following formula (I) with the relation of the thickness of slab t of said insulated substrate.
0.5×t≤(d
0-d
r)＜t…(I)
2. insulated substrate according to claim 1, wherein, the aluminium purity of said aluminium base is more than the 99.90 quality %.
3. insulated substrate according to claim 1, it is used for the LED purposes.
4. the manufacturing approach of an insulated substrate, it is a manufacturing approach of making the insulated substrate of each described insulated substrate in the claim 1～3, it has following operation:
Through hole forms operation, runs through the formation through hole at the thickness direction of aluminium base;
The dissolution process operation is implemented dissolution process after said through hole forms operation, dissolve the marginal portion at least of the peristome of said through hole; And
The anodized operation is implemented anodized after said dissolution process operation, the surface of said aluminium base and the internal face of the back side and said through hole are covered with anodic oxide coating.
5. the manufacturing approach of insulated substrate according to claim 4, wherein, said dissolution process is that photoetch is handled.
6. the manufacturing approach of insulated substrate according to claim 4, wherein, after said through hole forms operation and before the said anodized operation, having can be with the singualtion operation of said aluminium base with required shape singualtion.
7. light source module, it possesses:
Each described insulated substrate in the claim 1～3,
Be installed on said aluminium base the surface light emitting source and
Be located at said aluminium base the back side pass the wiring layer that said through hole is electrically connected with said light emitting source.
8. light source module according to claim 7, wherein, said light emitting source is LED.
9. light source module according to claim 7, it is used for the back light unit purposes.
10. liquid crystal indicator, it possesses: described light source module of claim 9 and the panel of LCD that is disposed at the light emitting side of said light source module.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010220784A JP5416674B2 (en) | 2010-09-30 | 2010-09-30 | Insulating substrate, manufacturing method thereof, light source module and liquid crystal display device using the same |
| JP2010-220784 | 2010-09-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102569598A true CN102569598A (en) | 2012-07-11 |
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ID=46136612
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011102812113A Pending CN102569598A (en) | 2010-09-30 | 2011-09-21 | Insulating substrate, method for manufacturing the substrate, optical module utilizing the substrate and liquid crystal display device utilizing the substrate |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP5416674B2 (en) |
| KR (1) | KR20120033997A (en) |
| CN (1) | CN102569598A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104157580A (en) * | 2014-08-12 | 2014-11-19 | 上海航天电子通讯设备研究所 | Embedded chip interconnecting and packaging method based on aluminum anodizing technology and structure |
| CN110249437A (en) * | 2018-01-10 | 2019-09-17 | 首尔半导体株式会社 | Light emitting device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9754869B2 (en) | 2013-01-16 | 2017-09-05 | 3M Innovative Properties Company | Light emitting semiconductor device and substrate therefore |
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|---|---|---|---|---|
| US20050051789A1 (en) * | 2003-09-09 | 2005-03-10 | Negley Gerald H. | Solid metal block mounting substrates for semiconductor light emitting devices, and oxidizing methods for fabricating same |
| CN101155469A (en) * | 2006-06-20 | 2008-04-02 | 三洋电机株式会社 | Circuit board and method for manufacturing semiconductor modules and circuit boards |
| US20090166664A1 (en) * | 2007-12-28 | 2009-07-02 | Samsung Electro-Mechanics Co., Ltd. | High power light emitting diode package and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000150718A (en) * | 1998-11-09 | 2000-05-30 | Sumitomo Metal Ind Ltd | Metallic base wiring board with through hole and method of fabrication |
| JP3977414B1 (en) * | 2004-08-06 | 2007-09-19 | 株式会社アライドマテリアル | Semiconductor element mounting member, semiconductor device, imaging device, light emitting diode component, and light emitting diode |
-
2010
- 2010-09-30 JP JP2010220784A patent/JP5416674B2/en not_active Expired - Fee Related
-
2011
- 2011-09-21 CN CN2011102812113A patent/CN102569598A/en active Pending
- 2011-09-27 KR KR1020110097540A patent/KR20120033997A/en not_active Application Discontinuation
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050051789A1 (en) * | 2003-09-09 | 2005-03-10 | Negley Gerald H. | Solid metal block mounting substrates for semiconductor light emitting devices, and oxidizing methods for fabricating same |
| CN101155469A (en) * | 2006-06-20 | 2008-04-02 | 三洋电机株式会社 | Circuit board and method for manufacturing semiconductor modules and circuit boards |
| US20090166664A1 (en) * | 2007-12-28 | 2009-07-02 | Samsung Electro-Mechanics Co., Ltd. | High power light emitting diode package and manufacturing method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104157580A (en) * | 2014-08-12 | 2014-11-19 | 上海航天电子通讯设备研究所 | Embedded chip interconnecting and packaging method based on aluminum anodizing technology and structure |
| CN104157580B (en) * | 2014-08-12 | 2017-06-06 | 上海航天电子通讯设备研究所 | Embedding chip interconnection packaging method and structure based on anode oxidation technology |
| CN110249437A (en) * | 2018-01-10 | 2019-09-17 | 首尔半导体株式会社 | Light emitting device |
| US11908984B2 (en) | 2018-01-10 | 2024-02-20 | Seoul Semiconductor Co., Ltd. | Light emitting device having a reflective member |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5416674B2 (en) | 2014-02-12 |
| JP2012079748A (en) | 2012-04-19 |
| KR20120033997A (en) | 2012-04-09 |
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Application publication date: 20120711 |