CN102569421B - 新型碳化硅肖特基二极管 - Google Patents
新型碳化硅肖特基二极管 Download PDFInfo
- Publication number
- CN102569421B CN102569421B CN201010592965.6A CN201010592965A CN102569421B CN 102569421 B CN102569421 B CN 102569421B CN 201010592965 A CN201010592965 A CN 201010592965A CN 102569421 B CN102569421 B CN 102569421B
- Authority
- CN
- China
- Prior art keywords
- epitaxial layer
- sic epitaxial
- sic
- schottky barrier
- contact metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 56
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 56
- 230000004888 barrier function Effects 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 238000005468 ion implantation Methods 0.000 claims description 3
- 230000000903 blocking effect Effects 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 21
- 238000000034 method Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201010592965.6A CN102569421B (zh) | 2010-12-17 | 2010-12-17 | 新型碳化硅肖特基二极管 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201010592965.6A CN102569421B (zh) | 2010-12-17 | 2010-12-17 | 新型碳化硅肖特基二极管 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102569421A CN102569421A (zh) | 2012-07-11 |
CN102569421B true CN102569421B (zh) | 2015-06-17 |
Family
ID=46414378
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010592965.6A Active CN102569421B (zh) | 2010-12-17 | 2010-12-17 | 新型碳化硅肖特基二极管 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN102569421B (zh) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101015059A (zh) * | 2004-07-15 | 2007-08-08 | 飞兆半导体公司 | 减小电容和开关损失的肖特基二极管结构及其制造方法 |
CN101313407A (zh) * | 2005-11-25 | 2008-11-26 | 财团法人电力中央研究所 | 肖特基势垒二极管及其使用方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1254026C (zh) * | 2000-11-21 | 2006-04-26 | 松下电器产业株式会社 | 通信系统用仪器 |
JP2005079339A (ja) * | 2003-08-29 | 2005-03-24 | National Institute Of Advanced Industrial & Technology | 半導体装置、およびその半導体装置を用いた電力変換器、駆動用インバータ、汎用インバータ、大電力高周波通信機器 |
-
2010
- 2010-12-17 CN CN201010592965.6A patent/CN102569421B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101015059A (zh) * | 2004-07-15 | 2007-08-08 | 飞兆半导体公司 | 减小电容和开关损失的肖特基二极管结构及其制造方法 |
CN101313407A (zh) * | 2005-11-25 | 2008-11-26 | 财团法人电力中央研究所 | 肖特基势垒二极管及其使用方法 |
Also Published As
Publication number | Publication date |
---|---|
CN102569421A (zh) | 2012-07-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101877352B (zh) | 反向导通半导体器件 | |
CN104919595A (zh) | 具有双向双极晶体管的系统、电路、器件和方法 | |
CN103208531B (zh) | 一种快恢复二极管frd芯片及其制作方法 | |
CN104409519A (zh) | 一种具有浮岛结构的二极管 | |
CN104221156A (zh) | 二极管 | |
CN102664197B (zh) | Jfet及其制造方法以及使用该jfet的微型逆变器 | |
CN102208456B (zh) | 叠置p+-p结势垒控制肖特基二极管 | |
CN110534583A (zh) | 一种肖特基二极管及其制备方法 | |
CN203351612U (zh) | 肖特基二极管 | |
CN202009004U (zh) | 新型碳化硅肖特基二极管 | |
CN203179900U (zh) | 一种快恢复二极管frd芯片 | |
CN104134703A (zh) | 一种低漏电低正向压降肖特基二极管结构及其制备方法 | |
CN102569421B (zh) | 新型碳化硅肖特基二极管 | |
CN104638020A (zh) | 一种基于外延的垂直型恒流二极管及其制造方法 | |
CN102487088A (zh) | 一种垂直沟道恒流二极管 | |
CN102938421A (zh) | 一种梯形终端的碳化硅结势垒肖特基二极管器件 | |
CN107749420B (zh) | 一种逆阻型igbt | |
CN108695396A (zh) | 一种二极管及其制作方法 | |
CN112599587B (zh) | 一种具有缓冲层结构的半导体器件 | |
CN105448972B (zh) | 反向导通绝缘栅双极型晶体管 | |
CN103872110A (zh) | 逆导型igbt的背面结构及其制备方法 | |
CN106816463A (zh) | 一种终端结构、半导体器件及其制备方法 | |
CN202977427U (zh) | 一种恒电流二极管单元结构 | |
CN103208511A (zh) | 一种超结肖特基半导体装置及其制备方法 | |
CN102403321A (zh) | 半导体装置及制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20230411 Address after: 312000 No. 518, Linjiang Road, Gaobu street, Yuecheng District, Shaoxing City, Zhejiang Province Patentee after: Shaoxing SMIC integrated circuit manufacturing Co.,Ltd. Address before: 310027 School of electrical engineering, Zhejiang University, No. 38 Zhejiang Road, Hangzhou, Zhejiang, Xihu District Patentee before: ZHEJIANG University |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20231221 Address after: Room 203-18, Building 1, No. 1433 Renmin East Road, Gaobu Street, Yuecheng District, Shaoxing City, Zhejiang Province, 312035 Patentee after: Xinlian Power Technology (Shaoxing) Co.,Ltd. Address before: 312000 No. 518, Linjiang Road, Gaobu street, Yuecheng District, Shaoxing City, Zhejiang Province Patentee before: Shaoxing SMIC integrated circuit manufacturing Co.,Ltd. |