CN102560370B - 被覆件及其制造方法 - Google Patents
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Abstract
本发明提供一种被覆件,其包括基体、依次形成于该基体上的铬渗入层、铬层及铱层,该基体材质为碳纤维/ZrB2复合材料。所述被覆件具有良好的高温抗氧化性及抗热震性。本发明还提供了所述被覆件的制造方法。
Description
技术领域
本发明涉及一种被覆件及其制造方法。
背景技术
碳纤维由于其具有低密度、高强度、高模量、低热膨胀系数、耐腐蚀、易编织加工以及较好的热、电性能等优良特性被广泛用于航天航空、建筑及电子元器件制造等领域。但碳纤维的抗氧化性能较差,且与金属、聚合物复合材料的润湿性不佳,大大限制了碳纤维材料在上述领域的应用。
现有技术利用化学气相沉积技术(CVD)将碳纤维(Cf)与ZrB2相结合形成Cf/ZrB2复合材料,该种Cf/ZrB2复合材料具有优良的机械性能及韧性,但其高温抗氧化性较差。
贵金属铱(Ir)熔点2443℃,因饱和蒸气压低、氧渗透率低而具有优良的高温抗氧化性能,是唯一在1600℃以上的空气中仍具有很好机械性能的金属。但是由于碳纤维与铱涂层之间润湿性较差,沉积于碳纤维材料上的铱涂层经高温处理后会产生大量裂纹,因此所述铱涂层的高温抗氧化性及抗热震性能较差。
发明内容
鉴于此,提供一种有效解决上述问题的被覆件。
另外,还提供一种上述被覆件的制造方法。
一种被覆件,包括基体、依次形成于该基体上的铬渗入层、铬层及铱层,该基体材质为碳纤维/ZrB2复合材料。
一种被覆件的制造方法,包括以下步骤:
提供基体,该基体材质为碳纤维/ZrB2复合材料;
以铬靶为靶材,于所述基体表面磁控溅射铬层,溅射温度为100~200℃,溅射时间为150~250min;在磁控溅射该铬层的过程中,该铬层与基体界面处的金属铬向基体扩散,于基体与铬层之间形成铬渗入层;
以铱靶为靶材,于所述铬层上磁控溅射形成铱层。
所述铬层的形成可提高所述铱层与基体之间的结合力,使被覆件经高温处理后铱层不易剥落或裂纹,如此可提高所述铱层的高温抗氧化性能。此外,通过上述制造方法形成的铱层几乎无针孔、具有良好的致密性,如此可进一步提高所述铱层的抗氧化性。
所述铱层还具有良好的抗热震性能,主要有如下两方面的原因:一方面,由于所述铬层从基体表层内向外梯度过渡,没有成分和力学性能的突变;另一方面,所述铱层与铬层之间过渡较好,没有成分和力学性能的突变。
因此,所述被覆件具有良好的高温抗氧化性及抗热震性。
附图说明
图1为本发明较佳实施例的被覆件的剖视图;
图2为制造图1中镀膜件所用真空镀膜机的示意图。
主要元件符号说明
被覆件 10
基体 11
铬渗入层 13
铬层 15
铱层 17
镀膜机 100
镀膜室 20
真空泵 30
轨迹 21
第一靶材 22
第二靶材 23
气源通道 24
具体实施方式
请参阅图1,本发明一较佳实施例的被覆件10包括基体11、依次形成于该基体11上的铬渗入层13、铬层15及铱层17。该被覆件10可以为涡轮叶片、喷嘴等航天航空机械零部件,也可为建筑、电子及汽车等交通工具的零部件。该基体11的材质为碳纤维/ZrB2复合材料。
所述铬层15及铱层17均可通过磁控溅射镀膜法形成。所述铬层15的厚度为2~3.5μm。所述铱层17的厚度为2~3.5μm。
所述铬渗入层13是在所述铬层15的形成过程中,铬层15与基体11界面处的金属铬向基体11内扩散而形成。所述铬渗入层13包括碳纤维(Cf)、ZrB2陶瓷相、Cr金属相及Cr-C相。
本发明一较佳实施例的制造所述被覆件10的方法主要包括如下步骤:
提供基体11,该基体11的材质为碳纤维/ZrB2复合材料。
请参阅图2,提供一真空镀膜机100,将所述基体11置于该真空镀膜机100内进行氩气等离子体清洗,以进一步去除基体11表面的油污,以及改善基体11表面与后续涂层的结合力。
该镀膜机100包括一镀膜室20及与镀膜室20相连接的一真空泵30,真空泵30用以对镀膜室20抽真空。该镀膜室20内设有转架(未图示)、二第一靶材22及二第二靶材23。转架带动基体11沿圆形轨迹21运行,且基体11在沿轨迹21运行时亦自转。二第一靶材22与二第二靶材23关于轨迹21的中心对称设置,且二第一靶材22相对地设置在轨迹21的内外侧,二第二靶材23相对地设置在轨迹21的内外侧。每一第一靶材22及每一第二靶材23的两端均设有气源通道24,气体经该气源通道24进入所述镀膜室20中。当基体11穿过二第一靶材22之间时,将镀上第一靶材22表面溅射出的粒子,当基体11穿过二第二靶材23之间时,将镀上第二靶材23表面溅射出的粒子。本实例中,所述第一靶材22为铬靶,所述第二靶材23为铱靶。
该等离子体清洗的具体操作及工艺参数为:如图2所示,基体11安装于镀膜室20内,真空泵30对所述镀膜室20进行抽真空处理至真空度为8.0×10-3Pa,然后以300~500s ccm(标准状态毫升/分钟)的流量向镀膜室20内通入纯度为99.999%的氩气,并施加-500~-800V的偏压于基体11,对基体11表面进行等离子体清洗,清洗时间为5~15min。
在对基体11进行等离子清洗后,于该基体11上形成铬层15。形成该铬层15的具体操作及工艺参数如下:以氩气为工作气体,调节氩气流量为20~150sccm,于基体11上施加-100~-300V的偏压,并加热镀膜室20至100~200℃(即镀膜温度为100~200);开启已安装于该镀膜机内的第一靶材22的电源,设置其功率为2~5kw,沉积铬层15。沉积该铬层15的时间为150~250min。
在形成所述铬层15的过程中,由于铬金属与碳纤维/ZrB2复合材料之间具有良好的润湿性,所述铬层15与基体11界面处的金属铬向基体11内扩散,形成包括碳纤维(Cf)、ZrB2陶瓷相、Cr金属相及Cr-C相的铬渗入层13。该铬渗入层13提高了铬层15与基体11之间的结合力。
于该铬层15上形成铱层17,形成所述铱层17的具体操作及工艺参数如下:关闭所述第一靶材22的电源,保持所述氩气的流量、施加于基体11的偏压及镀膜温度不变,开启已安装于所述镀膜室20内第二靶材23的电源,设置其功率为2~5kw,于所述铬层15上沉积铱层17。沉积该铱层17的时间为150~250min。
在磁控溅射所述形成铱层17的过程中,铱金属将扩散至所述铬层15的表层内,如此使铱层17与铬层15之间过渡较好,没有成分和力学性能的突变。
本发明较佳实施例被覆件10的制造方法,先于基体11上磁控溅射形成铬层15,再于所述铬层15上形成铱层17。所述铬层15的形成可提高所述铱层17与基体11之间的结合力,使被覆件10经高温处理后铱层17不易剥落或裂纹,如此可提高所述铱层17的高温抗氧化性能。此外,通过上述制造方法形成的铱层17几乎无针孔、具有良好的致密性,如此可进一步提高所述铱层17的抗氧化性。
所述铱层17还具有良好的抗热震性能,主要有如下两方面的原因:一方面,由于所述铬层15从基体11表层内向外梯度过渡,没有成分和力学性能的突变;另一方面,所述铱层17与铬层15之间过渡较好,没有成分和力学性能的突变。
因此,所述被覆件10具有良好的高温抗氧化性及抗热震性。
Claims (9)
1.一种被覆件,其特征在于:所述被覆件包括基体、依次形成于该基体上的铬渗入层、铬层及铱层,该基体的材质为碳纤维/ZrB2复合材料。
2.如权利要求1所述的被覆件,其特征在于:所述铬层及铱层均通过磁控溅射镀膜法形成。
3.如权利要求2所述的被覆件,其特征在于:所述铬层的厚度为2~3.5μm,所述铱层的厚度为2~3.5μm。
4.如权利要求2所述的被覆件,其特征在于:所述铬渗入层是在所述铬层的形成过程中,铬层与基体界面处的金属铬向基体内扩散而形成。
5.如权利要求4所述的被覆件,其特征在于:所述铬渗入层包括碳纤维、ZrB2陶瓷相、Cr金属相及Cr-C相。
6.一种被覆件的制造方法,包括以下步骤:
提供基体,该基体的材质为碳纤维/ZrB2复合材料;
以铬靶为靶材,于所述基体表面磁控溅射铬层,溅射温度为100~200℃,溅射时间为150~250min;在磁控溅射该铬层的过程中,该铬层与基体界面处的金属铬向基体扩散,于基体与铬层之间形成铬渗入层;
以铱靶为靶材,于所述铬层上磁控溅射形成铱层。
7.如权利要求6所述的被覆件的制造方法,其特征在于:磁控溅射形成所述铬层的工艺参数为:以氩气为工作气体,氩气流量为20~150sccm,施加于基体上的偏压为-100~-300V,铬靶的电源功率为2~5kw。
8.如权利要求6所述的被覆件的制造方法,其特征在于:磁控溅射形成所述铱层的工艺参数为:以氩气为工作气体,氩气流量为20~150sccm,施加于基体上的偏压为-100~-300V,铱靶的电源功率为2~5kw,镀膜温度为100~200℃,镀膜时间为150~250min。
9.如权利要求6所述的被覆件的制造方法,其特征在于:所述被覆件的制造方法还包括在进行磁控溅射所述铬层前对所述基体进行超声波清洗及等离子清洗的步骤。
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US6299438B1 (en) * | 1997-09-30 | 2001-10-09 | Implant Sciences Corporation | Orthodontic articles having a low-friction coating |
CN102534490A (zh) * | 2010-12-31 | 2012-07-04 | 鸿富锦精密工业(深圳)有限公司 | 被覆件及其制备方法 |
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2010
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2011
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US5294489A (en) * | 1992-04-02 | 1994-03-15 | General Electric Company | Protective coating with reactive interlayer on reinforcement in silicon carbide composite |
US5855828A (en) * | 1994-06-06 | 1999-01-05 | Ultramet | Method of forming a composite structure such as a rocket combustion chamber |
CN1391242A (zh) * | 2001-06-08 | 2003-01-15 | 株式会社村田制作所 | 金属膜及其制备方法,层压陶瓷电子元件及其制备方法 |
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US8440320B2 (en) | 2013-05-14 |
CN102560370A (zh) | 2012-07-11 |
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