CN102548179B - Lower electrode device and semiconductor equipment - Google Patents
Lower electrode device and semiconductor equipment Download PDFInfo
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- CN102548179B CN102548179B CN201010591768.2A CN201010591768A CN102548179B CN 102548179 B CN102548179 B CN 102548179B CN 201010591768 A CN201010591768 A CN 201010591768A CN 102548179 B CN102548179 B CN 102548179B
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Abstract
The invention discloses a kind of lower electrode device and semiconductor equipment.This lower electrode device comprises bottom electrode, adaptation and radio-frequency power supply, and described adaptation is connected with described radio-frequency power supply, and described adaptation is connected on described bottom electrode by connector.The connector that the present invention adopts, by larger electric current, meets the requirement of big current, without the need to customizing connector and the cable of super large-scale, thus reduces cost and save the development time; Without the need to customizing connector and the cable of super large-scale, effectively prevent due to the connector of customization and the low and maintainable low problem of equipment that is that cause of the versatility of cable, thus improve the maintainability of equipment; Without the need to customizing connector and the cable of super large-scale, effectively prevent and adopt the connector of super large-scale of customization and cable and the low problem of the equipment dependability that causes, thus improve the reliability of equipment.
Description
Technical field
The present invention relates to microelectronics technology, particularly a kind of lower electrode device and semiconductor equipment.
Background technology
Along with the development of microelectric technique, plasma apparatus is widely used in the manufacturing process such as current semiconductor, solar cell and flat panel display.At present, plasma apparatus comprises DC discharge plasma equipment, capacitance coupling plasma (CCP) equipment, inductively coupled plasma (ICP) equipment and Ecr plasma (ECR) equipment.Above-mentioned plasma apparatus is widely used in the techniques such as physical vapour deposition (PVD) (PVD), plasma etching and chemical vapour deposition (CVD) (CVD).
Fig. 1 is a kind of structural representation of plasma apparatus, and as shown in Figure 1, this plasma apparatus comprises reaction chamber 12, bottom electrode 1, adaptation 2, radio-frequency power supply 3, magnetron 13 and DC power supply 14.Wherein, bottom electrode 1 can comprise electrostatic chuck and pedestal, electrostatic chuck is placed with wafer (not shown in figure 1).Reaction chamber 12 comprises cavity 121 and sputtering target material 122, and sputtering target material 122 is arranged at the top of cavity 121.Magnetron 13 is arranged at the top of reaction chamber 12.DC power supply 14 is connected to sputtering target material 122.Direct current power is applied to sputtering target material 122 by DC power supply 14, produces plasma, and attracts Ions Bombardment sputtering target material 122, be deposited on wafer after the material of sputtering target material 121 is sputtered.Adaptation 2 is connected with radio-frequency power supply 3 and bottom electrode 1 respectively.The radio-frequency power that radio-frequency power supply 3 is applied on bottom electrode 1 can produce radio frequency automatic bias.In the plasma apparatus of prior art, the distance between wafer and reaction chamber top needs can carry out regulating to meet the requirement of development technology, and this just requires that the bottom electrode 1 carrying wafer can be elevated.As shown in Figure 1, adaptation 2 fixed placement can be connected between adaptation 2 with bottom electrode 1 by cable 17.Particularly, difference mounted connector 15 and connector 16 on the radio frequency leading-in end of bottom electrode 1 and the output of adaptation 2, cable 17 is connected with connector 15 and connector 16 respectively, thus realizes adaptation 2 to be connected with bottom electrode 1.Installing hole is screw, and described 4th installing hole is screw, and described installing component is screw.In lifting process, adaptation 2 can keep fixed placement, and cable 17 carries out elevating movement with bottom electrode 1.
Because the impedance of bottom electrode is less, be usually less than 15 Europe; Bear power comparatively large, being generally 500W ~ 3000W, is even larger numerical value.Therefore, connector and cable by very large electric current, can reach more than 60A usually.But, current connector by maximum current be 60A, cable by maximum current be less than especially connector by maximum current, therefore connector and cable all cannot meet the current requirements being greater than 60A.
At present, for solving the problem, connector and the cable of the super large-scale of customization can be adopted, to meet the requirement of big current.But there is following defect in the connector of the super large-scale of customization and cable:
1, the connector and the cable that customize super large-scale add cost and consume the development time;
2, due to the connector of customization and the versatility of cable very low, the probability broken down can increase, thus causes the maintainability of equipment to reduce;
3, the volume of the connector of customization is comparatively large, cable diameter is comparatively thick, easily occurs the situation of connector and cable bad, thus cause the reliability of equipment to reduce after carrying out multi-pass operation and dismounting to the connector customized and cable.
Summary of the invention
The object of this invention is to provide a kind of lower electrode device and semiconductor equipment, in order to solving increase cost that the connector of super large-scale that adopts customization and cable cause, expend the development time, maintainablely to reduce and technical problem that reliability reduces.
For achieving the above object, the invention provides a kind of lower electrode device, comprise: bottom electrode, adaptation and radio-frequency power supply, described adaptation is connected with described radio-frequency power supply, and described adaptation adopts the mode be fixedly connected with to be installed on described bottom electrode by the connector that can improve the size of current passed through.
Described connector comprises link and installing component, described link offers the first installing hole and the second installing hole, described bottom electrode offers the 3rd installing hole, described adaptation offers the 4th installing hole; Described installing component is fixed on described bottom electrode by the first connecting hole and the 3rd connecting hole by described link and described link is also fixed on described adaptation by the second connecting hole and the 4th connecting hole by described installing component, is connected on described bottom electrode to make described adaptation.
The shape of described link comprises column or band shape.
The material of described link comprises copper, silver-plated copper or aluminium.
The quantity of described link is one or more.
The width of described link is for being more than or equal to 10mm.
If when the shape of described link is banded, the width of described link is for being more than or equal to 15mm.
Described 3rd installing hole is screw, and described 4th installing hole is screw, and described installing component is screw.
Described connector is plug component; Described plug component is arranged on described adaptation, described bottom electrode offers the spliced eye mated with described plug component, and described plug component inserts described spliced eye and is connected on described bottom electrode to make described adaptation.
Described connector is plug component; Described plug component is arranged on described bottom electrode, described adaptation offers the spliced eye mated with described plug component, and described plug component inserts described spliced eye and is connected on described bottom electrode to make described adaptation.
The shape of described plug component is column.
The width of described plug component is more than or equal to 10mm.
The material of described plug component comprises copper, silver-plated copper or aluminium.
Described lower electrode device also comprises: be arranged at the radome between described bottom electrode and described adaptation.
For achieving the above object, present invention also offers a kind of semiconductor equipment, comprising: reaction chamber and above-mentioned lower electrode device, described bottom electrode is arranged at the inside of described reaction chamber.
Described semiconductor equipment is Pvd equipment.
The present invention has following beneficial effect:
Lower electrode device provided by the invention comprises bottom electrode, adaptation and radio-frequency power supply, and adaptation is connected with radio-frequency power supply and adaptation is connected on bottom electrode by connector.The connector that technical scheme of the present invention adopts is by larger electric current, meet the requirement of big current, without the need to customizing connector and the cable of super large-scale, effectively prevent the increase cost adopting the connector of the super large-scale of customization and cable to cause and the problem expending the development time, thus reduce cost and save the development time; Without the need to customizing connector and the cable of super large-scale, effectively prevent due to the connector of customization and the low and maintainable low problem of equipment that is that cause of the versatility of cable, thus improve the maintainability of equipment; Without the need to customizing connector and the cable of super large-scale, effectively prevent and adopt the connector of super large-scale of customization and cable and the low problem of the equipment dependability that causes, thus improve the reliability of equipment.
Accompanying drawing explanation
Fig. 1 is a kind of structural representation of plasma apparatus;
The structural representation of a kind of lower electrode device that Fig. 2 provides for the embodiment of the present invention one;
Fig. 3 is the end view of Fig. 2;
Fig. 4 is the structural representation of link in Fig. 2;
Fig. 5 is the structural representation of bottom electrode in Fig. 2;
Fig. 6 is the structural representation of adaptation in Fig. 2;
The structural representation of a kind of lower electrode device that Fig. 7 provides for the embodiment of the present invention two;
Fig. 8 is the end view of Fig. 7;
The structural representation of a kind of lower electrode device that Fig. 9 provides for the embodiment of the present invention three;
Figure 10 be in Fig. 9 A-A to cutaway view;
Figure 11 is the structural representation of adaptation in Fig. 9;
Figure 12 is the structural representation of bottom electrode in Fig. 9;
The structural representation of a kind of lower electrode device that Figure 13 provides for the embodiment of the present invention four;
Figure 14 be in Figure 13 B-B to cutaway view;
The structural representation of a kind of lower electrode device that Figure 15 provides for the embodiment of the present invention five;
Figure 16 be in Figure 15 C-C to cutaway view;
Figure 17 is the structural representation of bottom electrode in Figure 15;
Figure 18 is the structural representation of adaptation in Figure 15;
The structural representation of a kind of lower electrode device that Figure 19 provides for the embodiment of the present invention six;
Figure 20 be in Figure 19 D-D to cutaway view;
Figure 21 is the schematic diagram of the speed of service of bottom electrode in the present invention;
The structural representation of a kind of semiconductor equipment that Figure 22 provides for the embodiment of the present invention seven.
Embodiment
For making those skilled in the art understand technical scheme of the present invention better, below in conjunction with accompanying drawing, the bottom electrode for plasma apparatus provided by the invention and plasma apparatus are described in detail.
The structural representation of a kind of lower electrode device that Fig. 2 provides for the embodiment of the present invention one, Fig. 3 is the end view of Fig. 2, and as shown in Figures 2 and 3, this lower electrode device comprises: bottom electrode 1, adaptation 2 and radio-frequency power supply 3.Adaptation 2 is connected with radio-frequency power supply 3, and adaptation 2 is connected on bottom electrode 1 by connector, and particularly, adaptation 2 is installed on bottom electrode 1 by the mode be fixedly connected with.
In the present embodiment, adaptation 2 can be connected by cable 4 with radio-frequency power supply 3.When the length of cable 4 can carry out elevating movement according to bottom electrode 1, the needs of range ability set.
In the present embodiment, connector comprises link 5 and installing component 6.Fig. 4 is the structural representation of link in Fig. 2, as shown in Figure 4, link 5 offers the first installing hole 51 and the second installing hole 52.The quantity of the first installing hole 51 can be one or more, the quantity of the second installing hole 52 can be one or more, be described for first installing hole 51 and second installing hole 52 in the present embodiment, multiple first installing hole 51 and multiple second installing hole 52 can also be adopted in actual applications as required.The shape of link 5 comprises column or band shape.Wherein, if when the shape of link 5 is column, this column can comprise flat column, cylindric, semi-cylindrical or irregular column etc.The material of link 5 can be metal, and preferably, the material of link 5 comprises copper, silver-plated copper or aluminium.The quantity of link 5 is one or more, is described in the present embodiment for a link 5, and multiple link 5 can also be adopted in actual applications to be as required connected on bottom electrode 1 by adaptation 2.Preferably, the width d of link 5 can for being more than or equal to 10mm.Such as: if when the shape of link 5 is column, the width d of link 5 is for being more than or equal to 10mm; If when the shape of link 5 is banded, the width d of link 5 is for being more than or equal to 15mm.
Fig. 5 is the structural representation of bottom electrode in Fig. 2, and Fig. 6 is the structural representation of adaptation in Fig. 2, as shown in Figures 2 to 6, bottom electrode 1 offers the 3rd installing hole 11, adaptation 2 offers the 4th installing hole 21.The quantity of the 3rd installing hole 11 can be one or more, the quantity of the 4th installing hole 21 can be one or more, be described for the 3rd installing hole 11 and the 4th installing hole 21 in the present embodiment, multiple 3rd installing hole 11 and multiple 4th installing hole 52 can also be adopted in actual applications as required.And, in the present embodiment, due to the 3rd installing hole 11 and the first installing hole 51 with the use of, 4th installing hole 21 and the second installing hole 52 with the use of, therefore the quantity of the 3rd installing hole 11 can be identical with the quantity of the first installing hole 51 in the application, and the quantity of the second installing hole 52 can be identical with the quantity of the 4th installing hole 21.In the present embodiment, the quantity of installing component 6 can be equal with the quantity sum of the first installing hole 51 and the second installing hole 52.
In the present embodiment, preferably, the 3rd installing hole 11 can be screw, and the 4th installing hole 21 can be screw, and installing component 6 can be screw.
In the present embodiment, installing component 6 is fixed on bottom electrode 1 by the first connecting hole 51 and the 3rd connecting hole 11 by link 5 and link 5 is also fixed on adaptation 2 by the second connecting hole 52 and the 4th connecting hole 21 by installing component 6, is connected on bottom electrode 1 to make adaptation 2.
In the present embodiment, bottom electrode 1 can comprise electrostatic chuck (electrostatic chuck comprises dielectric ceramic layer and is embedded in the electrode layer in dielectric ceramic layer) and pedestal, and electrostatic chuck is arranged on pedestal; And as shown in Figure 5, shown in dotted line frame is the radio frequency leading-in end of bottom electrode 1, particularly, this radio frequency leading-in end can be a radio frequency and introduces post, this radio frequency is introduced post and is vertically arranged in the mounting disc (all not illustrating in the relevant drawings of the present embodiment) of lower electrode device, and whole bottom electrode 1 can be made to be installed in mounting disc by pedestal this radio frequency sheathed introducing post, wherein pedestal and radio frequency introduce post for being electrically connected.Then adaptation 2 is connected to radio frequency leading-in end by connector and is connected on bottom electrode 1 to make adaptation 2, particularly, 3rd connecting hole 11 can be opened on radio frequency leading-in end, link 5 to be fixed on by the first connecting hole 51 and the 3rd connecting hole 11 on the radio frequency leading-in end on bottom electrode 1 by installing component 6, thus realizes adaptation 2 to be connected on bottom electrode 1.
In the present embodiment, the radio-frequency current that connector passes through can be more than 100A, and the radio-frequency power born can be more than 3000W, and therefore connector can meet the requirement of big current, and the present embodiment is without the need to customizing connector and the cable of super large-scale.
The lower electrode device that the present embodiment provides comprises bottom electrode, adaptation and radio-frequency power supply, and adaptation is connected with radio-frequency power supply and adaptation is connected on bottom electrode by the connector comprising link and installing component.The connector of the technical scheme employing of the present embodiment is by larger electric current, meet the requirement of big current, without the need to customizing connector and the cable of super large-scale, effectively prevent the increase cost adopting the connector of the super large-scale of customization and cable to cause and the problem expending the development time, thus reduce cost and save the development time; Without the need to customizing connector and the cable of super large-scale, effectively prevent due to the connector of customization and the low and maintainable low problem of equipment that is that cause of the versatility of cable, thus improve the maintainability of equipment; Without the need to customizing connector and the cable of super large-scale, effectively prevent and adopt the connector of super large-scale of customization and cable and the low problem of the equipment dependability that causes, thus improve the reliability of equipment.The connector that the technical scheme of the present embodiment adopts, by larger electric current, meets the requirement of big current, enables this connector bear higher-wattage, improve the performance of equipment, thus achieves and carry out process exploitation at high power, increases process window.
The structural representation of a kind of lower electrode device that Fig. 7 provides for the embodiment of the present invention two, Fig. 8 is the end view of Fig. 7, and as shown in Figure 7 and Figure 8, the lower electrode device of the present embodiment, on the basis of above-described embodiment one, can comprise further: radome 18.Radome 18 is arranged between bottom electrode 1 and adaptation 2, and radome 18 can be used for adaptation 2 to be fixed on bottom electrode 1.And radome 18 can also be used for carrying out electromagnetic shielding.Other structure in lower electrode device see the description in embodiment one, can repeat no more herein.
The structural representation of a kind of lower electrode device that Fig. 9 provides for the embodiment of the present invention three, Figure 10 is that in Fig. 9, A-A is to cutaway view, and as shown in Figure 9 and Figure 10, this lower electrode device comprises: bottom electrode 1, adaptation 2 and radio-frequency power supply 3.Adaptation 2 is connected with radio-frequency power supply 3, and adaptation 2 is connected on bottom electrode 1 by connector, and particularly, adaptation 2 is installed on bottom electrode 1 by the mode be fixedly connected with.
In the present embodiment, adaptation 2 can be connected by cable 4 with radio-frequency power supply 3.When the length of cable 4 can carry out elevating movement according to bottom electrode 1, the needs of range ability set.
In the present embodiment, connector is plug component 7.Figure 11 is the structural representation of adaptation in Fig. 9, and as shown in figure 11, plug component 7 is arranged on adaptation 2.Plug component 7 and adaptation 2 can be structure as a whole, or plug component 7 is directly connected on adaptation 2.Figure 12 is the structural representation of bottom electrode in Fig. 9, as is illustrated by figs. 11 and 12, bottom electrode 1 offers the spliced eye 8 mated with plug component 7, and plug component 7 inserts spliced eye 7 and is connected on bottom electrode 1 to make adaptation 2.Wherein, it is inner that the dotted line that in Figure 12, label 8 identifies represents that spliced eye 8 is positioned at bottom electrode 1.
In the present embodiment, the quantity of plug component 7 can be one or more, is described in the present embodiment for a plug component 7, can also adopt multiple plug component 7 as required in actual applications.The quantity of spliced eye 8 is identical with the quantity of plug component 7.The shape of spliced eye 8 and the mating shapes of plug component 7.Preferably, the shape of plug component 7 is column, such as: this column can comprise flat column, cylindric, semi-cylindrical or irregular column etc.; The shape of spliced eye 8 is column, such as: this column can comprise flat column, cylindric, semi-cylindrical or irregular column etc.The material of plug component 7 can be metal, and preferably, the material of plug component 7 comprises copper, silver-plated copper or aluminium.Preferably, the width d of plug component 7 is more than or equal to 10mm.
In the present embodiment, preferably, spliced eye 8 can be the hole of band reed, and plug component 7 can be cylinder.
In the present embodiment, bottom electrode 1 can comprise electrostatic chuck (electrostatic chuck comprises dielectric ceramic layer and is embedded in the electrode layer in dielectric ceramic layer) and pedestal, and electrostatic chuck is arranged on pedestal; And as shown in figure 12, shown in dotted line frame is the radio frequency leading-in end of bottom electrode 1, particularly, this radio frequency leading-in end can be a radio frequency and introduces post, this radio frequency is introduced post and is vertically arranged in the mounting disc (all not illustrating in the relevant drawings of the present embodiment) of lower electrode device, and whole bottom electrode 1 can be made to be installed in mounting disc by pedestal this radio frequency sheathed introducing post, wherein pedestal and radio frequency introduce post for being electrically connected.Then adaptation 2 is connected to radio frequency leading-in end by connector and makes adaptation 2 be connected on bottom electrode 1, particularly, spliced eye 8 can be opened on radio frequency leading-in end, plug component 7 inserts spliced eye 8 to realize being fixed on by plug component 7 on the radio frequency leading-in end on bottom electrode 1, thus realizes adaptation 2 to be connected on bottom electrode 1.
In the present embodiment, the radio-frequency current that connector passes through can be more than 100A, and the radio-frequency power born can be more than 3000W, and therefore connector can meet the requirement of big current, and the present embodiment is without the need to customizing connector and the cable of super large-scale.
The lower electrode device that the present embodiment provides comprises bottom electrode, adaptation and radio-frequency power supply, adaptation is connected with radio-frequency power supply and adaptation is connected on bottom electrode by connector, connector is plug component, plug component is arranged on adaptation, bottom electrode offers spliced eye, and plug component inserts spliced eye and is connected on bottom electrode to make adaptation.The connector of the technical scheme employing of the present embodiment is by larger electric current, meet the requirement of big current, without the need to customizing connector and the cable of super large-scale, effectively prevent the increase cost adopting the connector of the super large-scale of customization and cable to cause and the problem expending the development time, thus reduce cost and save the development time; Without the need to customizing connector and the cable of super large-scale, effectively prevent due to the connector of customization and the low and maintainable low problem of equipment that is that cause of the versatility of cable, thus improve the maintainability of equipment; Without the need to customizing connector and the cable of super large-scale, effectively prevent and adopt the connector of super large-scale of customization and cable and the low problem of the equipment dependability that causes, thus improve the reliability of equipment.The connector that the technical scheme of the present embodiment adopts, by larger electric current, meets the requirement of big current, enables this connector bear higher-wattage, improve the performance of equipment, thus achieves and carry out process exploitation at high power, increases process window.
The structural representation of a kind of lower electrode device that Figure 13 provides for the embodiment of the present invention four, Figure 14 be in Figure 13 C-C to cutaway view, as shown in Figure 13 and Figure 14, the lower electrode device of the present embodiment, on the basis of above-described embodiment three, can comprise further: radome 18.Radome 18 is arranged between bottom electrode 1 and adaptation 2, and radome 18 can be used for adaptation 2 to be fixed on bottom electrode 1.And radome 18 can also be used for carrying out electromagnetic shielding.Other structure in lower electrode device see the description in embodiment three, can repeat no more herein.
The structural representation of a kind of lower electrode device that Figure 15 provides for the embodiment of the present invention five, Figure 16 is that in Figure 15, C-C is to cutaway view, and as shown in Figure 15 and Figure 16, this lower electrode device comprises: bottom electrode 1, adaptation 2 and radio-frequency power supply 3.Adaptation 2 is connected with radio-frequency power supply 3, and adaptation 2 is connected on bottom electrode 1 by connector, and particularly, adaptation 2 is installed on bottom electrode 1 by the mode be fixedly connected with.
In the present embodiment, adaptation 2 can be connected by cable 4 with radio-frequency power supply 3.When the length of cable 4 can carry out elevating movement according to bottom electrode 1, the needs of range ability set.
In the present embodiment, connector is plug component 9.Figure 17 is the structural representation of bottom electrode in Figure 15, and as shown in figure 17, plug component 9 is arranged on bottom electrode 1.Plug component 9 and bottom electrode 1 can be structure as a whole, or plug component 9 is directly connected on bottom electrode 1.Figure 18 is the structural representation of adaptation in Figure 15, as shown in Figure 17 and Figure 18, adaptation 2 offers the spliced eye 10 mated with plug component 9, and plug component 9 inserts spliced eye 10 and is connected on bottom electrode 1 to make adaptation 2.Wherein, it is inner that the dotted line in Figure 18 represents that spliced eye 8 is positioned at adaptation 2.
In the present embodiment, the quantity of plug component 9 can be one or more, is described in the present embodiment for a plug component 9, can also adopt multiple plug component 9 as required in actual applications.The quantity of spliced eye 10 is identical with the quantity of plug component 9.The shape of spliced eye 10 and the mating shapes of plug component 9.Preferably, the shape of plug component 9 is column, such as: this column can comprise flat column, cylindric, semi-cylindrical or irregular column etc.; The shape of spliced eye 10 is column, such as: this column can comprise flat column, cylindric, semi-cylindrical or irregular column etc.The material of plug component 9 can be metal, and preferably, the material of plug component 9 comprises copper, silver-plated copper or aluminium.Preferably, the width d of plug component 9 is more than or equal to 10mm.
In the present embodiment, preferably, spliced eye 10 can be the hole of band reed, and plug component 9 can be cylinder.
In the present embodiment, bottom electrode 1 can comprise electrostatic chuck (electrostatic chuck comprises dielectric ceramic layer and is embedded in the electrode layer in dielectric ceramic layer) and pedestal, and electrostatic chuck is arranged on pedestal; And as shown in figure 17, shown in dotted line frame is the radio frequency leading-in end of bottom electrode 1, particularly, this radio frequency leading-in end can be a radio frequency and introduces post, this radio frequency is introduced post and is vertically arranged in the mounting disc (all not illustrating in the relevant drawings of the present embodiment) of lower electrode device, and whole bottom electrode 1 can be made to be installed in mounting disc by pedestal this radio frequency sheathed introducing post, wherein pedestal and radio frequency introduce post for being electrically connected.Then adaptation 2 is connected to radio frequency leading-in end by connector adaptation 2 is connected on bottom electrode 1.Particularly, plug component 9 can be arranged on radio frequency leading-in end, and plug component 9 inserts spliced eye 10 to realize being fixed on by adaptation 2 on the radio frequency leading-in end on bottom electrode 1, thus realizes adaptation 2 to be connected on bottom electrode 1.
In the present embodiment, the radio-frequency current that connector passes through can be more than 100A, and the radio-frequency power born can be more than 3000W, and therefore connector can meet the requirement of big current, and the present embodiment is without the need to customizing connector and the cable of super large-scale.
The lower electrode device that the present embodiment provides comprises bottom electrode, adaptation and radio-frequency power supply, adaptation is connected with radio-frequency power supply and adaptation is connected on bottom electrode by connector, connector is plug component, plug component is arranged on bottom electrode, adaptation offers spliced eye, and plug component inserts spliced eye and is connected on bottom electrode to make adaptation.The connector of the technical scheme employing of the present embodiment is by larger electric current, meet the requirement of big current, without the need to customizing connector and the cable of super large-scale, effectively prevent the increase cost adopting the connector of the super large-scale of customization and cable to cause and the problem expending the development time, thus reduce cost and save the development time; Without the need to customizing connector and the cable of super large-scale, effectively prevent due to the connector of customization and the low and maintainable low problem of equipment that is that cause of the versatility of cable, thus improve the maintainability of equipment; Without the need to customizing connector and the cable of super large-scale, effectively prevent and adopt the connector of super large-scale of customization and cable and the low problem of the equipment dependability that causes, thus improve the reliability of equipment.The connector that the technical scheme of the present embodiment adopts, by larger electric current, meets the requirement of big current, enables this connector bear higher-wattage, improve the performance of equipment, thus achieves and carry out process exploitation at high power, increases process window.
The structural representation of a kind of lower electrode device that Figure 19 provides for the embodiment of the present invention six, Figure 20 be in Figure 19 D-D to cutaway view, as illustrated in figures 19 and 20, the lower electrode device of the present embodiment, on the basis of above-described embodiment five, can comprise further: radome 18.Radome 18 is arranged between bottom electrode 1 and adaptation 2, and radome 18 can be used for adaptation 2 to be fixed on bottom electrode 1.And radome 18 can also be used for carrying out electromagnetic shielding.Other structure in lower electrode device see the description in embodiment five, can repeat no more herein.
In the various embodiments described above provided by the invention, the electrode of bottom electrode can drive bottom electrode to carry out elevating movement, and because adaptation is connected on bottom electrode by connector, therefore bottom electrode can drive adaptation to carry out elevating movement.Frequently carry out in the process of elevating movement at bottom electrode, the impact to adaptation and bottom electrode can be caused, thus reduce bottom electrode and the reliability of adaptation in frequent elevating movement.For improving bottom electrode and the reliability of adaptation in frequent elevating movement, can the speed of service that bottom electrode carries out elevating movement be controlled.Particularly, by controlling the motor speed of bottom electrode, control with the speed of service realizing carrying out bottom electrode elevating movement.Figure 21 is the schematic diagram of the speed of service of bottom electrode in the present invention, shown in Figure 21 is the speed of service schematic diagram that bottom electrode one way is elevated (namely rising or decline process), as shown in figure 21, bottom electrode is acceleration at A-B running speed, be at the uniform velocity at B-C running speed, at C-D running speed for slowing down.When bottom electrode adopts the speed of service described in Figure 21 to carry out elevating movement, effectively can avoid the impact to adaptation and bottom electrode in elevating movement, thus improve bottom electrode and the reliability of adaptation in frequent elevating movement.
The structural representation of a kind of semiconductor equipment that Figure 22 provides for the embodiment of the present invention seven, as shown in figure 22, this semiconductor equipment comprises: reaction chamber 12 and lower electrode device, and lower electrode device comprises bottom electrode 1, adaptation 2 and radio-frequency power supply 3.Adaptation 2 is connected with radio-frequency power supply 3, and adaptation 2 is connected on bottom electrode 1 by connector.Bottom electrode 1 is arranged at the inside of reaction chamber 12.Particularly, adaptation 2 is installed on bottom electrode 1 by the mode be fixedly connected with.
Lower electrode device in the present embodiment can adopt the arbitrary described lower electrode device of above-described embodiment one to embodiment six, repeats no more herein.In the present embodiment, be described for the lower electrode device described in embodiment one, specific descriptions can see embodiment one.In the present embodiment, semiconductor equipment is plasma apparatus.
In the present embodiment, semiconductor equipment is waited to comprise: magnetron 13 and DC power supply 14.Bottom electrode 1 can comprise electrostatic chuck and pedestal, electrostatic chuck is placed with wafer (not shown in Figure 22).Reaction chamber 12 comprises cavity 121 and sputtering target material 122, and sputtering target material 122 is arranged at the top of cavity 121.Magnetron 13 is arranged at the top of reaction chamber 12.DC power supply 14 is connected to sputtering target material 122.Adaptation 2 is connected with radio-frequency power supply 3 and bottom electrode 1 respectively.Particularly, in the present embodiment, this semiconductor equipment is Pvd equipment.
The embodiment of the present invention five additionally provides a kind of semiconductor equipment, and the present embodiment eight is with the difference of above-described embodiment seven: the semiconductor equipment in the present embodiment does not comprise magnetron and DC power supply.
The embodiment of the present invention nine additionally provides a kind of semiconductor equipment, and the semiconductor equipment in the present embodiment comprises reaction chamber, radio-frequency power supply and lower electrode device.Reaction chamber comprises cavity and is arranged at the top crown at cavity top, and radio-frequency power supply is connected to top crown.In the present embodiment, lower electrode device can adopt the arbitrary described lower electrode device of above-described embodiment one to embodiment six, repeats no more herein.
The embodiment of the present invention nine additionally provides a kind of semiconductor equipment, and the semiconductor equipment in the present embodiment comprises reaction chamber, adaptation, radio-frequency power supply and lower electrode device.Reaction chamber comprises cavity and is arranged at the dielectric window at cavity top, and radio-frequency power supply is connected with adaptation, and adaptation is connected to dielectric window.Inductance coil is arranged at the top of reaction chamber.In the present embodiment, lower electrode device can adopt the arbitrary described lower electrode device of above-described embodiment one to embodiment six, repeats no more herein.
In the semiconductor equipment that the various embodiments described above of the present invention provide, lower electrode device comprises bottom electrode, adaptation and radio-frequency power supply, and adaptation is connected with radio-frequency power supply and adaptation is connected on bottom electrode by connector.The connector adopted in the various embodiments described above of the present invention is by larger electric current, meet the requirement of big current, without the need to customizing connector and the cable of super large-scale, effectively prevent the increase cost adopting the connector of the super large-scale of customization and cable to cause and the problem expending the development time, thus reduce cost and save the development time; Without the need to customizing connector and the cable of super large-scale, effectively prevent due to the connector of customization and the low and maintainable low problem of equipment that is that cause of the versatility of cable, thus improve the maintainability of equipment; Without the need to customizing connector and the cable of super large-scale, effectively prevent and adopt the connector of super large-scale of customization and cable and the low problem of the equipment dependability that causes, thus improve the reliability of equipment.
In sum, the semiconductor equipment provided in the above embodiment of the present invention is plasma apparatus, and this plasma apparatus can be applicable to PVD equipment, CVD equipment or plasma etching equipment.Or can also say, this plasma apparatus can be applicable to CCP equipment, ICP equipment or ECR equipment.
Be understandable that, the illustrative embodiments that above execution mode is only used to principle of the present invention is described and adopts, but the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (13)
1. a lower electrode device, comprising: bottom electrode, adaptation and radio-frequency power supply, and described adaptation is connected with described radio-frequency power supply, it is characterized in that, described adaptation adopts the mode be fixedly connected with to be installed on described bottom electrode by connector, and,
Described connector comprises link and installing component, and the shape of described link comprises column or band shape, and when the shape of described link is column, the width of described link is for being more than or equal to 10mm; When the shape of described link is banded, the width of described link is for being more than or equal to 15mm, and described connector is by the electric current of more than 60A.
2. lower electrode device according to claim 1, is characterized in that, described link offers the first installing hole and the second installing hole, described bottom electrode offers the 3rd installing hole, described adaptation offers the 4th installing hole; Described installing component is fixed on described bottom electrode by the first connecting hole and the 3rd connecting hole by described link and described link is also fixed on described adaptation by the second connecting hole and the 4th connecting hole by described installing component, is connected on described bottom electrode to make described adaptation.
3. lower electrode device according to claim 2, is characterized in that, the material of described link comprises copper, silver-plated copper or aluminium.
4. lower electrode device according to claim 2, is characterized in that, the quantity of described link is one or more.
5. lower electrode device according to claim 2, is characterized in that, described 3rd installing hole is screw, and described 4th installing hole is screw, and described installing component is screw.
6. lower electrode device according to claim 1, is characterized in that, described connector is plug component; Described plug component is arranged on described adaptation, described bottom electrode offers the spliced eye mated with described plug component, and described plug component inserts described spliced eye and is connected on described bottom electrode to make described adaptation.
7. lower electrode device according to claim 1, is characterized in that, described connector is plug component; Described plug component is arranged on described bottom electrode, described adaptation offers the spliced eye mated with described plug component, and described plug component inserts described spliced eye and is connected on described bottom electrode to make described adaptation.
8. the lower electrode device according to claim 6 or 7, is characterized in that, the shape of described plug component is column.
9. the lower electrode device according to claim 6 or 7, is characterized in that, the width of described plug component is more than or equal to 10mm.
10. the lower electrode device according to claim 6 or 7, is characterized in that, the material of described plug component comprises copper, silver-plated copper or aluminium.
11. lower electrode devices according to claim 1, is characterized in that, also comprise: be arranged at the radome between described bottom electrode and described adaptation.
12. 1 kinds of semiconductor equipments, is characterized in that, comprising: reaction chamber and as arbitrary in claim 1 to 11 as described in lower electrode device, described bottom electrode is arranged at the inside of described reaction chamber.
13. semiconductor equipments according to claim 12, is characterized in that, described semiconductor equipment is Pvd equipment.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010591768.2A CN102548179B (en) | 2010-12-08 | 2010-12-08 | Lower electrode device and semiconductor equipment |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201010591768.2A CN102548179B (en) | 2010-12-08 | 2010-12-08 | Lower electrode device and semiconductor equipment |
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| CN102548179B true CN102548179B (en) | 2016-04-20 |
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| CN201010591768.2A Active CN102548179B (en) | 2010-12-08 | 2010-12-08 | Lower electrode device and semiconductor equipment |
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| CN111326382B (en) * | 2018-12-17 | 2023-07-18 | 中微半导体设备(上海)股份有限公司 | Capacitively coupled plasma etching equipment |
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| TW503440B (en) * | 1999-11-08 | 2002-09-21 | Applied Materials Inc | Apparatus for controlling temperature in a semiconductor processing system |
| KR100470224B1 (en) * | 2002-02-05 | 2005-02-05 | 주성엔지니어링(주) | chuck have matching box fixing apparatus |
| JP4607517B2 (en) * | 2003-09-03 | 2011-01-05 | 東京エレクトロン株式会社 | Plasma processing equipment |
| JP4676189B2 (en) * | 2004-11-02 | 2011-04-27 | 東京エレクトロン株式会社 | High frequency power supply apparatus and plasma processing apparatus |
| CN2906969Y (en) * | 2006-02-28 | 2007-05-30 | 谢玉珠 | Heavy current connector |
| US7432467B2 (en) * | 2006-03-28 | 2008-10-07 | Tokyo Electron Limited | Plasma processing apparatus |
| JP2009218410A (en) * | 2008-03-11 | 2009-09-24 | Tokyo Electron Ltd | Plasma processing apparatus |
| JP5222598B2 (en) * | 2008-03-25 | 2013-06-26 | 東京エレクトロン株式会社 | Plasma processing apparatus and power supply rod |
| CN201436716U (en) * | 2008-10-16 | 2010-04-07 | 上海华伦仪表电子有限公司 | Heavy current connector |
| JP5996257B2 (en) * | 2011-12-15 | 2016-09-21 | 本田技研工業株式会社 | Saddle riding |
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Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100015, M5 building, No. 1 Jiuxianqiao East Road, Beijing, Chaoyang District, two South Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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