CN101148752A - For 10-8Sealing device of Pa ultrahigh vacuum circular plane magnetron sputtering target - Google Patents
For 10-8Sealing device of Pa ultrahigh vacuum circular plane magnetron sputtering target Download PDFInfo
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- CN101148752A CN101148752A CNA2006100961447A CN200610096144A CN101148752A CN 101148752 A CN101148752 A CN 101148752A CN A2006100961447 A CNA2006100961447 A CN A2006100961447A CN 200610096144 A CN200610096144 A CN 200610096144A CN 101148752 A CN101148752 A CN 101148752A
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- waterway
- target
- magnetron sputtering
- supporting seat
- sputtering target
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- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 19
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 47
- 229910052742 iron Inorganic materials 0.000 claims abstract description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910000831 Steel Inorganic materials 0.000 claims abstract description 15
- 239000010959 steel Substances 0.000 claims abstract description 15
- 238000001816 cooling Methods 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 13
- 230000000630 rising effect Effects 0.000 claims description 22
- 238000000605 extraction Methods 0.000 claims description 9
- 239000004411 aluminium Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229920001971 elastomer Polymers 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- 239000011737 fluorine Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 238000007789 sealing Methods 0.000 abstract description 8
- 229910052755 nonmetal Inorganic materials 0.000 abstract description 2
- 238000002360 preparation method Methods 0.000 abstract description 2
- 238000004544 sputter deposition Methods 0.000 description 14
- 239000010410 layer Substances 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 238000009413 insulation Methods 0.000 description 4
- 238000005477 sputtering target Methods 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000004083 survival effect Effects 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229920002449 FKM Polymers 0.000 description 1
- 208000019155 Radiation injury Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 150000001398 aluminium Chemical class 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
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Abstract
The invention discloses a device for 10－8A sealing device of a Pa ultrahigh vacuum circular plane magnetron sputtering target. A soft iron (5) and a magnetic steel (4) are arranged in a water-cooling cavity (3), an O-shaped metal sealing ring (7) is arranged between the lower end face of the water-cooling cavity and the upper end face of a water-cooling cavity sealing flange (17) and is fixed through a screw (22), water inlet and outlet pipes (20, 19) are respectively welded on the soft iron (5) and the water-cooling cavity sealing flange (17), an electrode insulating layer (13) and two groups of four O-shaped sealing rings (8, 9, 10, 11) are arranged between the lower end face of the water-cooling cavity sealing flange (17) and the upper end face of a target supporting seat (15) and are in abutting connection through a fastening nut (18) on the other end of a water outlet pipe (19) sleeved in the target supporting seat (15), through holes (12, 14) communicated with an air exhaust pipe (16) are arranged between each group of O-shaped sealing rings, and. Its vacuum degree is up to 6X 10－8Pa, can realize the preparation of high-quality and high-purity metal or nonmetal films.
Description
Technical field
The present invention relates to a kind of tightness system of magnetron sputtering target, in particular for 10
-8The tightness system of Pa high vacuum round plane magnetron sputtering target.
Background technology
After making various components and parts on the semiconductor material, by the circuit layout requirement these components and parts are coupled together, the technology that forms the unicircuit with various functions is called metallization process.The quality of metal system and technology thereof can influence the Performance And Reliability of circuit.Sputtering technology is one of metallization process of using always, because of the energy of its deposit particle higher, film and substrate adhesivity are better, the alloying constituent of sputtered film and the composition of target are basic identical, step to substrate covers better, and sputtering voltage is lower, has reduced the radiation injury to substrate material, so be widely used in semiconducter device and circuit production technology and other coating process.Magnetron sputtering utilizes the acting in conjunction in electric field and magnetic field, the small space that allows electronics be surrounded on magnetic line of force and target surface is for the helical movement, improved the probability of collision between electronics and the sputter gas atom, characteristics such as therefore it has the sputter rate height, voltage is low, efficient is high and underlayer temperature is low are all used magnetron sputtering target on present most sputtering equipments.As " a kind of plane magnetic controlled sputtering target " that in the Chinese utility application specification sheets CN 2030599U of bulletin on January 11st, 1989, discloses.It adopts the magnet seal closure to be built-in with the structure of pure iron, magnet and cooling system.During use, its negative electrode as sputtering equipment is placed in the vacuum chamber, and wherein cooling system is continuously supplied water through water inlet pipe.But, this sputtering target exists weak point, at first, pack in the magnet seal closure behind pure iron, magnet and the cooling system, if welding encapsulation, then be difficult to each parts of packing in it are carried out necessary maintenance and replacing, if the cover-plate type encapsulation, then gas leakage infiltration phenomenon very easily takes place in encapsulation place in the future; Secondly, as negative electrode, need with sputtering equipment in other parts carry out electric insulation, and insulation layer is non-metallic material and makes, this just can't use the mode of welding to solve mutual sealing problem; Once more, because of its structural defective, make that the vacuum tightness of sputtering equipment is the highest can only to reach 10
-6Pa, because the vacuum tightness of equipment is not high, when carrying out metal sputtering technology, because of having more vapour molecule and oxygen molecule etc. in the environment, can cause being off color of metal level normal, defectives such as gloomy muddy zone, reflectance difference and weldability difference are arranged, seriously influenced the performance and the yield rate of semiconducter device and circuit.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of rational in infrastructure for overcoming weak point of the prior art, and vacuum tightness height, working service are used for 10 easily
-8The tightness system of Pa high vacuum round plane magnetron sputtering target.
The technical scheme that is adopted comprises the soft iron in the shielding case, magnet steel and cooling system, particularly (a) said cooling system contains the waterway that is connected, the waterway tongued and grooved flanges, water inlet pipe and rising pipe, wherein, the magnet steel that the cavity of said waterway is built-in with soft iron and is provided with on it, be equipped with zero shape metal o-ring between lower surface and waterway tongued and grooved flanges upper surface, and be fixedly connected through screw, be equipped with through hole on the sidewall of said waterway tongued and grooved flanges, one end of said through hole communicates with the bottom of screw hole, the other end communicates with vacuum chamber, said water inlet pipe is set in the rising pipe, and be welded and connected with it after running through soft iron, said rising pipe is welded and connected with it after running through the waterway tongued and grooved flanges; (b) be equipped with electrode dielectric layer and two groups of four ○Xing Mifengquans between the lower surface of said waterway tongued and grooved flanges and target supporting seat upper surface, and the fitting nut on the rising pipe the other end of suit compresses connection mutually in the target supporting seat, wherein, the lower surface of said waterway tongued and grooved flanges and electrode insulation interlayer are equipped with the ○Xing Mifengquan of one group of two different diameter, be equipped with the ○Xing Mifengquan of one group of two different diameter between said electrode dielectric layer and target supporting seat upper surface, be equipped with through hole in the electrode dielectric layer between the ○Xing Mifengquan of said one group of two different diameter, be equipped with through hole in the target supporting seat between the ○Xing Mifengquan of said one group of two different diameter, this through hole is connected with extraction pipe; (c) be welded to connect mounting flange on the said target supporting seat.
As the further improvement of technical scheme, described zero shape metal o-ring is aluminium wire sealing-ring or filamentary silver sealing-ring or oxygen free copper sealing-ring; Described two groups of four ○Xing Mifengquans are logical (Viton) type fluorine cushion rubber of dimension; Described extraction pipe is connected with vacuum pump after running through mounting flange, between itself and mounting flange for being welded to connect; Contact with the magnet steel surface of a side of described soft iron is equipped with groove, and said groove is connected with water inlet pipe; The part of the corresponding waterway inner chamber body in described waterway tongued and grooved flanges upper surface is equipped with boss or groove, and said groove is connected with rising pipe; The other end of described target supporting seat is a nose, and said nose is connected with fitting nut is inconsistent; The connection that spins mutually of described fitting nut and screw thread on the rising pipe the other end; The upper end of described waterway spins through mutual screw thread with the target mounting cup and is connected; Described shielding case and target supporting seat are fixedly connected.
Beneficial effect with respect to prior art is, one, soft iron and the magnet steel that is provided with on it are placed in the cavity of waterway, the lower surface of waterway and waterway tongued and grooved flanges upper surface are fixedly connected through screw, and be equipped with zero shape metal o-ring between the two, both guaranteed the tightness between waterway and waterway tongued and grooved flanges, and be convenient to the maintenance and the replacing of magnet steel again, also making contact resistance between the two is zero.Be set in and be welded and connected with it after water inlet pipe in the rising pipe runs through soft iron, rising pipe is welded and connected with it after running through the waterway tongued and grooved flanges, not only guaranteed the conveying of water coolant and the tightness of cooling system, can also be electrically connected with the cathode that constitutes jointly by waterway, waterway tongued and grooved flanges and magnet steel etc. by inlet tube and outlet tube.Be equipped with through hole on the sidewall of waterway tongued and grooved flanges, one end of this through hole communicates with the bottom of screw hole, the other end communicates with vacuum chamber, make and just the gas of screw hole bottom is extracted out simultaneously during in initial stage of vacuumizing, avoided it in the venting of vacuum chamber during in ultrahigh vacuum(HHV) at the vacuum chamber of sputtering equipment; They are two years old, be equipped with electrode dielectric layer and two groups of four ○Xing Mifengquans between the lower surface of waterway tongued and grooved flanges and target supporting seat upper surface, and the fitting nut on the rising pipe the other end of suit compresses connection mutually in the target supporting seat, except that having realized as the waterway tongued and grooved flanges of negative electrode and as the electric insulation between the target supporting seat of ground terminal, also guaranteed mutual tightness, avoid the introducing of electrode in ultra-high vacuum system must use the drawback of sintering metal welded seal, reduced the cost of making and using.Each is organized in electrode dielectric layer between ○Xing Mifengquan and the target supporting seat and all is equipped with the through hole that communicates with extraction pipe, gas in the chamber that forms between every group of ○Xing Mifengquan is directly extracted out in advance, reduced of the influence of the gas efficiency of survival gas in the chamber and ○Xing Mifengquan self widely the vacuum chamber ultrahigh vacuum(HHV); Its three, the target supporting seat is welded on the mounting flange and becomes one, and both is connected firmly, and has guaranteed mutual tightness again; Its four, be placed in the vacuum chamber of sputtering equipment, the vacuum tightness of sputtering equipment can reach 6 * 10
-8Pa has improved two orders of magnitude than the vacuum tightness of existing sputtering target, can be used for multiple sputtering technologies such as direct current and radio frequency, can realize the preparation of high quality high purity metal or nonmetal film.
As the further embodiment of beneficial effect, one is that two groups of four ○Xing Mifengquans are all selected the logical type fluorine cushion rubber of dimension for use, and the characteristics that its gas efficiency is extremely low have tentatively been established the basis that obtains ultrahigh vacuum(HHV); The 2nd, extraction pipe is connected with vacuum pump after running through mounting flange, reduced possibility that the survival gas molecule in the chamber that forms between every group of ○Xing Mifengquan directly enters vacuum chamber, also reduced widely simultaneously inside and outside the vacuum chamber in the barometric point gradient at two groups of four ○Xing Mifengquan places; The 3rd, the contact surface of a side of soft iron and magnet steel is equipped with the groove that is connected with water inlet pipe, and the part of the corresponding waterway inner chamber body in the waterway tongued and grooved flanges upper surface groove that is equipped with boss or is connected with rising pipe, water coolant can be flowed through behind the surface of all magnet steel swimmingly by the groove on soft iron surface, groove by the soft iron back side or waterway tongued and grooved flanges upper surface flows out again, thereby can cool off fully magnet steel in the waterway and soft iron; The 4th, the other end of target supporting seat is and the inconsistent nose that is connected of fitting nut, and fitting nut be with the rising pipe the other end on screw thread spin mutually and connect, this mode of connection had been not only simple and reliable, but also can with waterway tongued and grooved flanges, electrode dielectric layer and target supporting seat closely tension and compression be integral; The 5th, the upper end of waterway spins through mutual screw thread with the target mounting cup and is connected, and not only is convenient to the installation and removal of target, also is easy to the fixing of target; The 6th, shielding case and target supporting seat are fixedly connected, and make it only just can carry out effective magnetic shielding to sputtering target with minimum surface-area.
Description of drawings
Below in conjunction with accompanying drawing optimal way of the present invention is described in further detail.
Fig. 1 is a kind of basic structure diagrammatic cross-section of the present invention.
Embodiment
Referring to Fig. 1, the magnet steel 4 that the cavity of waterway 3 is built-in with soft iron 5 and is provided with on it, the upper end of waterway 3 spins through mutual screw thread with target mounting cup 2 and is connected, is equipped with the zero shape metal o-ring 7 that is made of the aluminium wire sealing-ring between lower surface and waterway tongued and grooved flanges 17 upper surfaces, and is fixedly connected through screw 22.Be equipped with through hole 6 on the sidewall of waterway tongued and grooved flanges 17, an end of this through hole 6 communicates with the bottom in screw 22 holes, the other end communicates with vacuum chamber.Be set in water inlet pipe 20 in the rising pipe 19 and run through soft iron 5 backs and be welded and connected with it, the contact surface of a side of soft iron 5 and magnet steel 4 is equipped with the groove that is connected with water inlet pipe 20.Rising pipe 19 runs through waterway tongued and grooved flanges 17 backs and is welded and connected with it, and the part of corresponding waterway 3 inner chamber body in waterway tongued and grooved flanges 17 upper surfaces is equipped with boss and groove, and this groove is connected with rising pipe 19.Be equipped with electrode dielectric layer 13 and two groups four ○Xing Mifengquans (8 that constitute by the logical type fluorine cushion rubber of dimension between the lower surface of waterway tongued and grooved flanges 17 and target supporting seat 15 upper surfaces, 9,10,11) fitting nut 18, and in target supporting seat 15 on rising pipe 19 the other ends of suit compresses connection mutually; Wherein, 13 of the lower surface of waterway tongued and grooved flanges 17 and electrode dielectric layers are equipped with two ○Xing Mifengquans (8,9), are equipped with through hole 12 in the electrode dielectric layer (13) between these two ○Xing Mifengquans (8,9).Be equipped with two ○Xing Mifengquans (10,11) between electrode dielectric layer 13 and target supporting seat 15 upper surfaces, be equipped with through hole 14 in the target supporting seat 15 between these two ○Xing Mifengquans (10,11), through hole 14 is connected with extraction pipe 16.The connection that spins mutually of fitting nut 18 and screw thread on rising pipe 19 the other ends, the other end of target supporting seat 15 is a nose 23, this nose 23 and 18 inconsistent connections of fitting nut.Be welded to connect the mounting flange 21 matched on the target supporting seat 15 with vacuum chamber.Extraction pipe 16 runs through mounting flange 21 back and is connected with vacuum pump, and 21 of itself and mounting flanges are for being welded to connect.The shielding case 1 and the target supporting seat 15 of built-in target mounting cup 2, waterway 3, waterway tongued and grooved flanges 17, electrode dielectric layer 13 and target supporting seat 15 are fixedly connected.
During use, only need mounting flange 21 is loaded on the companion flange of vacuum chamber, extraction pipe 16 is connected with vacuum pump and gets final product.If the rafifinal target is installed in the present invention, sputtering equipment uses dc sputtering power, just can produce silvery white aluminium film; The not dark muddiness of this aluminium film is regional, reflectance is good and weldability is strong, has greatly improved the performance of device.If high-purity silicon target is installed in the present invention, sputtering equipment uses radio-frequency power supply, just can produce the polysilicon membrane of excellent property.
Obviously, those skilled in the art can be used for 10 to of the present invention
-8The tightness system of Pa high vacuum round plane magnetron sputtering target carries out various changes and modification and does not break away from the spirit and scope of the present invention.Like this, if of the present invention these are revised and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these changes and modification interior.
Claims (10)
1. one kind is used for 10
-8The tightness system of Pa high vacuum round plane magnetron sputtering target comprises soft iron (5), magnet steel (4) and cooling system in the shielding case (1), it is characterized in that:
(a) said cooling system contains the waterway (3) that is connected, waterway tongued and grooved flanges (17), water inlet pipe (20) and rising pipe (19), wherein, the magnet steel (4) that the cavity of said waterway (3) is built-in with soft iron (5) and is provided with on it, be equipped with zero shape metal o-ring (7) between lower surface and waterway tongued and grooved flanges (17) upper surface, and be fixedly connected through screw (22), be equipped with through hole (6) on the sidewall of said waterway tongued and grooved flanges (17), one end of said through hole (6) communicates with the bottom in screw (22) hole, the other end communicates with vacuum chamber, said water inlet pipe (20) is set in the rising pipe (19), and run through soft iron (5) back and be welded and connected with it, said rising pipe (19) runs through waterway tongued and grooved flanges (17) back and is welded and connected with it;
(b) be equipped with electrode dielectric layer (13) and two groups of four ○Xing Mifengquans (8 between the lower surface of said waterway tongued and grooved flanges (17) and target supporting seat (15) upper surface, 9,10,11), and the fitting nut (18) on rising pipe (19) the other end of suit compresses connection mutually in target supporting seat (15), wherein, be equipped with two ○Xing Mifengquans (8 between the lower surface of said waterway tongued and grooved flanges (17) and electrode dielectric layer (13), 9), be equipped with two ○Xing Mifengquans (10 between said electrode dielectric layer (13) and target supporting seat (15) upper surface, 11), be equipped with through hole (12) in the electrode dielectric layer (13) between said two ○Xing Mifengquans (8,9), said two ○Xing Mifengquans (10,11) be equipped with through hole (14) in the target supporting seat (15) between, said through hole (14) is connected with extraction pipe (16);
(c) be welded to connect mounting flange (21) on the said target supporting seat (15).
2. according to claim 1ly be used for 10
-8The tightness system of Pa high vacuum round plane magnetron sputtering target is characterized in that zero shape metal o-ring (7) is aluminium wire sealing-ring or filamentary silver sealing-ring or oxygen free copper sealing-ring.
3. according to claim 1ly be used for 10
-8The tightness system of Pa high vacuum round plane magnetron sputtering target is characterized in that ○Xing Mifengquan (8,9,10,11) is the logical type fluorine cushion rubber of dimension.
4. according to claim 1ly be used for 10
-8The tightness system of Pa high vacuum round plane magnetron sputtering target is characterized in that extraction pipe (16) runs through mounting flange (21) back and is connected with vacuum pump, between itself and mounting flange (21) for being welded to connect.
5. according to claim 1ly be used for 10
-8The tightness system of Pa high vacuum round plane magnetron sputtering target is characterized in that contact with magnet steel (4) surface of a side of soft iron (5) is equipped with groove, and said groove is connected with water inlet pipe (20).
6. according to claim 1ly be used for 10
-8The tightness system of Pa high vacuum round plane magnetron sputtering target is characterized in that the part of corresponding waterway (3) inner chamber body in waterway tongued and grooved flanges (17) upper surface is equipped with boss or groove, and said groove is connected with rising pipe (19).
7. according to claim 1ly be used for 10
-8The tightness system of Pa high vacuum round plane magnetron sputtering target, the other end that it is characterized in that target supporting seat (15) are nose (23), said nose (23) and inconsistent connection of fitting nut (18).
8. according to claim 1ly be used for 10
-8The tightness system of Pa high vacuum round plane magnetron sputtering target is characterized in that the connection that spins mutually of fitting nut (18) and screw thread on rising pipe (19) the other end.
9. according to claim 1ly be used for 10
-8The tightness system of Pa high vacuum round plane magnetron sputtering target, the upper end that it is characterized in that waterway (3) spins through mutual screw thread with target mounting cup (2) and is connected.
10. according to claim 1ly be used for 10
-8The tightness system of Pa high vacuum round plane magnetron sputtering target is characterized in that shielding case (1) and target supporting seat (15) are fixedly connected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100961447A CN100564582C (en) | 2006-09-19 | 2006-09-19 | For 10-8Sealing device of Pa ultrahigh vacuum circular plane magnetron sputtering target |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100961447A CN100564582C (en) | 2006-09-19 | 2006-09-19 | For 10-8Sealing device of Pa ultrahigh vacuum circular plane magnetron sputtering target |
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| Publication Number | Publication Date |
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| CN101148752A true CN101148752A (en) | 2008-03-26 |
| CN100564582C CN100564582C (en) | 2009-12-02 |
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| CNB2006100961447A Expired - Fee Related CN100564582C (en) | 2006-09-19 | 2006-09-19 | For 10-8Sealing device of Pa ultrahigh vacuum circular plane magnetron sputtering target |
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| CN111560588A (en) * | 2020-05-09 | 2020-08-21 | 南方科技大学 | Magnetron sputtering target and magnetron sputtering device for ultrahigh vacuum environment |
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| KR101358805B1 (en) * | 2012-08-22 | 2014-02-07 | 에이피시스템 주식회사 | Apparatus for draining coolant and method for operating the same and apparatus for processing substrate |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5200049A (en) * | 1990-08-10 | 1993-04-06 | Viratec Thin Films, Inc. | Cantilever mount for rotating cylindrical magnetrons |
| US6689254B1 (en) * | 1990-10-31 | 2004-02-10 | Tokyo Electron Limited | Sputtering apparatus with isolated coolant and sputtering target therefor |
| CN1053712C (en) * | 1997-04-30 | 2000-06-21 | 浙江大学 | Rotary target column type magnetic controlled sputtering device |
| US20060096855A1 (en) * | 2004-11-05 | 2006-05-11 | Richard Newcomb | Cathode arrangement for atomizing a rotatable target pipe |
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2006
- 2006-09-19 CN CNB2006100961447A patent/CN100564582C/en not_active Expired - Fee Related
Cited By (14)
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| CN101661861B (en) * | 2008-08-28 | 2011-09-14 | 中国科学院合肥物质科学研究院 | Hollow anode ion source used for ultra high vacuum system |
| CN102517556A (en) * | 2012-01-13 | 2012-06-27 | 广东志成冠军集团有限公司 | Target-substrate distance adjusting device for magnetron sputtering plane target coating equipment |
| CN103938165A (en) * | 2013-01-23 | 2014-07-23 | 上海北玻镀膜技术工业有限公司 | Novel cathode magnetic steel |
| CN103291586A (en) * | 2013-06-19 | 2013-09-11 | 储继国 | Vacuum furnace air-pumping system and air-pumping technology thereof |
| CN104120397A (en) * | 2014-07-31 | 2014-10-29 | 深圳市豪威薄膜技术有限公司 | Method and system for depositing indium tin oxide at low temperature |
| CN104404463A (en) * | 2014-11-14 | 2015-03-11 | 河海大学 | Planar magnetron sputtering target |
| CN107148399A (en) * | 2014-11-17 | 2017-09-08 | 瓦克化学股份公司 | Insulation and the equipment of the electrode clamping mechanism in sealing CVD reactors |
| CN105624620B (en) * | 2016-03-21 | 2018-04-03 | 上海福宜真空设备有限公司 | A kind of miniature circular flat target simplified with gas circuit and structure |
| CN106399958A (en) * | 2016-05-27 | 2017-02-15 | 中国电子科技集团公司第四十八研究所 | Rectangular magnetron sputtering target for metal plating |
| CN106399958B (en) * | 2016-05-27 | 2019-01-22 | 中国电子科技集团公司第四十八研究所 | A kind of rectangle magnetic controlled sputtering target for metal coating |
| CN111560588A (en) * | 2020-05-09 | 2020-08-21 | 南方科技大学 | Magnetron sputtering target and magnetron sputtering device for ultrahigh vacuum environment |
| CN111560588B (en) * | 2020-05-09 | 2022-05-03 | 南方科技大学 | Magnetron sputtering target and magnetron sputtering device for ultrahigh vacuum environment |
| CN114318285A (en) * | 2021-12-31 | 2022-04-12 | 广东省新兴激光等离子体技术研究院 | Vacuum coating equipment and coating method thereof |
| CN114318285B (en) * | 2021-12-31 | 2022-10-18 | 广东省新兴激光等离子体技术研究院 | Vacuum coating equipment and coating method thereof |
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