CN102548179A - Lower-electrode device and semiconductor equipment - Google Patents
Lower-electrode device and semiconductor equipment Download PDFInfo
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- CN102548179A CN102548179A CN2010105917682A CN201010591768A CN102548179A CN 102548179 A CN102548179 A CN 102548179A CN 2010105917682 A CN2010105917682 A CN 2010105917682A CN 201010591768 A CN201010591768 A CN 201010591768A CN 102548179 A CN102548179 A CN 102548179A
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Abstract
The invention discloses a lower-electrode device and semiconductor equipment. The lower-electrode device comprises a lower electrode, a matcher and a radio-frequency power source, and the matcher is connected with the radio-frequency power source and is connected to the lower electrode through a connector. The connector can be powered by larger current and meets the requirement of heavy current. Since needs of customizing a superlarge connector and cables are omitted, cost is reduced and developing time is saved and the problem of low maintainability due to low universality of the customized connector and cables is avoided effectively, maintainability of the equipment is improved and the problem of low reliability of the equipment due to the customized superlarge connector and cables is avoided effectively and reliability of the equipment is improved.
Description
Technical field
The present invention relates to microelectronics technology, particularly a kind of lower electrode device and semiconductor equipment.
Background technology
Along with the development of microelectric technique, plasma apparatus is widely used in the manufacturing process such as current semiconductor, solar cell and flat panel display.At present, plasma apparatus comprises DC discharge plasma equipment, capacitance coupling plasma (CCP) equipment, inductively coupled plasma (ICP) equipment and Ecr plasma (ECR) equipment.Above-mentioned plasma apparatus is widely used in technologies such as physical vapor deposition (PVD), plasma etching and chemical vapor deposition (CVD).
Fig. 1 is a kind of structural representation of plasma apparatus, and is as shown in Figure 1, and this plasma apparatus comprises reaction chamber 12, bottom electrode 1, adaptation 2, radio-frequency power supply 3, magnetron 13 and DC power supply 14.Wherein, bottom electrode 1 can comprise electrostatic chuck and pedestal, is placed with the wafer (not shown in figure 1) on the electrostatic chuck.Reaction chamber 12 comprises cavity 121 and sputtering target material 122, and sputtering target material 122 is arranged at the top of cavity 121.Magnetron 13 is arranged at the top of reaction chamber 12.DC power supply 14 is connected in sputtering target material 122.DC power supply 14 is applied to sputtering target material 122 with direct current power, produces plasma, and attracts ion bombardment sputtering target material 122, and the material of sputtering target material 121 can be deposited on the wafer after the sputter.Adaptation 2 is connected with bottom electrode 1 with radio-frequency power supply 3 respectively.The radio-frequency power that radio-frequency power supply 3 is applied on the bottom electrode 1 can produce the radio frequency automatic bias.In the plasma apparatus of prior art, the distance between wafer and the reaction chamber top needs can regulate so that satisfy the requirement of development technology, and this bottom electrode 1 that just requires to carry wafer can go up and down.As shown in Figure 1, can be connected through cable 17 with adaptation 2 fixed placement and with between adaptation 2 and the bottom electrode 1.Particularly, mounted connector 15 and connector 16 respectively on the output of the radio frequency leading-in end of bottom electrode 1 and adaptation 2, cable 17 is connected with connector 16 with connector 15 respectively, thus realization is connected adaptation 2 with bottom electrode 1.Like this, in bottom electrode 1 lifting process, adaptation 2 can keep fixed placement, and cable 17 carries out elevating movement with bottom electrode 1.
Because the impedance of bottom electrode is less, usually less than 15 Europe; It is bigger to bear power, is generally 500W～3000W, even is bigger numerical value.Therefore, on connector and cable, can reach more than the 60A usually through very big electric current.But at present the connector maximum current that can pass through is 60A, the maximum current that the maximum current that cable can pass through can pass through less than connector especially, so connector and cable all can't satisfy the current requirements greater than 60A.
At present, for addressing the above problem, can adopt the connector and the cable of the super large-scale of customization, to satisfy the requirement of big electric current.But there are following defective in the connector of the super large-scale of customization and cable:
1, the connector and the cable of customization super large-scale have increased cost and have expended the development time;
2,, thereby cause the maintainability of equipment to reduce because the versatility of the connector of customization and cable is very low, and the probability that breaks down can increase;
3, the volume of the connector of customization is big, the cable footpath is thicker, after the connector to customization carries out multi-pass operation and dismounting with cable, occurs the situation of connector and cable bad easily, thereby causes the reliability reduction of equipment.
Summary of the invention
The purpose of this invention is to provide a kind of lower electrode device and semiconductor equipment, in order to the connector of the super large-scale that solve to adopt customization with increase cost that cable causes, expend the development time, the maintainable reduction and the technical problem of reliability reduction.
For realizing above-mentioned purpose, the invention provides a kind of lower electrode device, comprising: bottom electrode, adaptation and radio-frequency power supply, said adaptation is connected with said radio-frequency power supply, and said adaptation is connected on the said bottom electrode through connector.
Said connector comprises link and installing component, offers first installing hole and second installing hole on the said link, offers the 3rd installing hole on the said bottom electrode, offers the 4th installing hole on the said adaptation; Said installing component is fixed in said link on the said bottom electrode through first connecting hole and the 3rd connecting hole and said installing component also is fixed in said link on the said adaptation through second connecting hole and the 4th connecting hole, so that said adaptation is connected on the said bottom electrode.
The shape of said link comprises column or banded.
The material of said link comprises copper, silver-plated copper or aluminium.
The quantity of said link is one or more.
The width of said link is more than or equal to 10mm.
If said link be shaped as band shape the time, the width of said link is more than or equal to 15mm.
Said the 3rd installing hole is a screw, and said the 4th installing hole is a screw, and said installing component is a screw.
Said connector is a plug component; Said plug component is arranged on the said adaptation, offers the spliced eye that matees with said plug component on the said bottom electrode, and said plug component inserts said spliced eye so that said adaptation is connected on the said bottom electrode.
Said connector is a plug component; Said plug component is arranged on the said bottom electrode, offers the spliced eye that matees with said plug component on the said adaptation, and said plug component inserts said spliced eye so that said adaptation is connected on the said bottom electrode.
Said plug component be shaped as column.
The width of said plug component is more than or equal to 10mm.
The material of said plug component comprises copper, silver-plated copper or aluminium.
Said lower electrode device also comprises: be arranged at the radome between said bottom electrode and the said adaptation.
For realizing above-mentioned purpose, the present invention also provides a kind of semiconductor equipment, comprising: reaction chamber and above-mentioned lower electrode device, said bottom electrode is arranged at the inside of said reaction chamber.
Said semiconductor equipment is a Pvd equipment.
The present invention has following beneficial effect:
Lower electrode device provided by the invention comprises bottom electrode, adaptation and radio-frequency power supply, and adaptation is connected with radio-frequency power supply and adaptation is connected on the bottom electrode through connector.The connector that technical scheme of the present invention adopts can pass through bigger electric current; Satisfied the requirement of big electric current; Need not to customize the connector and the cable of super large-scale; The connector of super large-scale of effectively having avoided adopting customization is with increase cost that cable causes and expend the problem of development time, thereby has reduced cost and saved the development time; Need not to customize the connector and the cable of super large-scale, effectively avoided the maintainable low problem of the low equipment that causes of versatility, thereby improved the maintainability of equipment owing to the connector and the cable of customization; Need not to customize the connector and the cable of super large-scale, effectively avoided adopting connector and cable and the low problem of equipment dependability that causes of the super large-scale of customization, thereby improved the reliability of equipment.
Description of drawings
Fig. 1 is a kind of structural representation of plasma apparatus;
The structural representation of a kind of lower electrode device that Fig. 2 provides for the embodiment of the invention one;
Fig. 3 is the end view of Fig. 2;
Fig. 4 is the structural representation of link among Fig. 2;
Fig. 5 is the structural representation of bottom electrode among Fig. 2;
Fig. 6 is the structural representation of adaptation among Fig. 2;
The structural representation of a kind of lower electrode device that Fig. 7 provides for the embodiment of the invention two;
Fig. 8 is the end view of Fig. 7;
The structural representation of a kind of lower electrode device that Fig. 9 provides for the embodiment of the invention three;
Figure 10 be among Fig. 9 A-A to cutaway view;
Figure 11 is the structural representation of adaptation among Fig. 9;
Figure 12 is the structural representation of bottom electrode among Fig. 9;
The structural representation of a kind of lower electrode device that Figure 13 provides for the embodiment of the invention four;
Figure 14 be among Figure 13 B-B to cutaway view;
The structural representation of a kind of lower electrode device that Figure 15 provides for the embodiment of the invention five;
Figure 16 be among Figure 15 C-C to cutaway view;
Figure 17 is the structural representation of bottom electrode among Figure 15;
Figure 18 is the structural representation of adaptation among Figure 15;
The structural representation of a kind of lower electrode device that Figure 19 provides for the embodiment of the invention six;
Figure 20 be among Figure 19 D-D to cutaway view;
Figure 21 is the sketch map of the speed of service of bottom electrode among the present invention;
The structural representation of a kind of semiconductor equipment that Figure 22 provides for the embodiment of the invention seven.
Embodiment
For making those skilled in the art understand technical scheme of the present invention better, bottom electrode and the plasma apparatus that is used for plasma apparatus provided by the invention is described in detail below in conjunction with accompanying drawing.
The structural representation of a kind of lower electrode device that Fig. 2 provides for the embodiment of the invention one, Fig. 3 are the end view of Fig. 2, and as shown in Figures 2 and 3, this lower electrode device comprises: bottom electrode 1, adaptation 2 and radio-frequency power supply 3.Adaptation 2 is connected with radio-frequency power supply 3, and adaptation 2 is connected on the bottom electrode 1 through connector, and particularly, adaptation 2 can be installed on the bottom electrode 1 through the mode that is fixedly connected.
In the present embodiment, adaptation 2 can be connected through cable 4 with radio-frequency power supply 3.The needs of range ability were set when the length of cable 4 can be carried out elevating movement according to bottom electrode 1.
In the present embodiment, connector comprises link 5 and installing component 6.Fig. 4 is the structural representation of link among Fig. 2, and is as shown in Figure 4, offers first installing hole 51 and second installing hole 52 on the link 5.The quantity of first installing hole 51 can be one or more; The quantity of second installing hole 52 can be one or more; Be that example describes with one first installing hole 51 and one second installing hole 52 in the present embodiment, in practical application, can also adopt a plurality of first installing holes 51 and a plurality of second installing holes 52 as required.The shape of link 5 comprises column or banded.Wherein, if link 5 be shaped as column the time, this column can comprise flat column, cylindric, semi-cylindrical or irregular column etc.The material of link 5 can be metal, and preferably, the material of link 5 comprises copper, silver-plated copper or aluminium.The quantity of link 5 is one or more, is that example describes with a link 5 in the present embodiment, in practical application, can also adopt a plurality of links 5 that adaptation 2 is connected on the bottom electrode 1 as required.Preferably, the width d of link 5 can be for more than or equal to 10mm.For example: if link 5 be shaped as column the time, the width d of link 5 is more than or equal to 10mm; If link 5 be shaped as band shape the time, the width d of link 5 is more than or equal to 15mm.
Fig. 5 is the structural representation of bottom electrode among Fig. 2, and Fig. 6 is the structural representation of adaptation among Fig. 2, to shown in Figure 6, offers the 3rd installing hole 11 like Fig. 2 on the bottom electrode 1, offers the 4th installing hole 21 on the adaptation 2.The quantity of the 3rd installing hole 11 can be one or more; The quantity of the 4th installing hole 21 can be one or more; Be that example describes with one the 3rd installing hole 11 and one the 4th installing hole 21 in the present embodiment, in practical application, can also adopt a plurality of the 3rd installing holes 11 and a plurality of the 4th installing holes 52 as required.And; In the present embodiment; Because the 3rd installing hole 11 and first installing hole 51 are used; The 4th installing hole 21 and second installing hole 52 are used, and therefore the quantity of the 3rd installing hole 11 can be identical with the quantity of first installing hole 51 in application, and the quantity of second installing hole 52 can be identical with the quantity of the 4th installing hole 21.In the present embodiment, the quantity of installing component 6 can equate with the quantity sum of first installing hole 51 and second installing hole 52.
In the present embodiment, preferably, the 3rd installing hole 11 can be screw, and the 4th installing hole 21 can be screw, and installing component 6 can be screw.
In the present embodiment; Installing component 6 is fixed in link 5 on the bottom electrode 1 through first connecting hole 51 and the 3rd connecting hole 11 and installing component 6 also is fixed in link 5 on the adaptation 2 through second connecting hole 52 and the 4th connecting hole 21, so that adaptation 2 is connected on the bottom electrode 1.
In the present embodiment, bottom electrode 1 can comprise electrostatic chuck (electrostatic chuck comprises dielectric ceramic layer and is embedded in the electrode layer in the dielectric ceramic layer) and pedestal, and electrostatic chuck is arranged on the pedestal; And it is as shown in Figure 5; Shown in the frame of broken lines is the radio frequency leading-in end of bottom electrode 1; Particularly, this radio frequency leading-in end can be a radio frequency and introduces post, and this radio frequency is introduced post and vertically is arranged in the mounting disc (all not illustrating in the relevant drawings of present embodiment) of lower electrode device; And introduce post through sheathed this radio frequency of pedestal and can make whole bottom electrode 1 be installed in the mounting disc, wherein pedestal is introduced post for being electrically connected with radio frequency.Then adaptation 2 can be connected in the radio frequency leading-in end so that adaptation 2 is connected on the bottom electrode 1 through connector; Particularly; The 3rd connecting hole 11 can be opened on the radio frequency leading-in end; Installing component 6 is fixed in link 5 on the radio frequency leading-in end on the bottom electrode 1 through first connecting hole 51 and the 3rd connecting hole 11, thereby realizes adaptation 2 is connected on the bottom electrode 1.
In the present embodiment, the radio-frequency current that connector passes through can be for more than the 100A, and the radio-frequency power that bears can be for more than the 3000W, so connector can satisfy the requirement of big electric current, and present embodiment need not to customize the connector and the cable of super large-scale.
The lower electrode device that present embodiment provides comprises bottom electrode, adaptation and radio-frequency power supply, and adaptation is connected with radio-frequency power supply and adaptation is connected on the bottom electrode through the connector that comprises link and installing component.The connector that the technical scheme of present embodiment adopts can pass through bigger electric current; Satisfied the requirement of big electric current; Need not to customize the connector and the cable of super large-scale; The connector of super large-scale of effectively having avoided adopting customization is with increase cost that cable causes and expend the problem of development time, thereby has reduced cost and saved the development time; Need not to customize the connector and the cable of super large-scale, effectively avoided the maintainable low problem of the low equipment that causes of versatility, thereby improved the maintainability of equipment owing to the connector and the cable of customization; Need not to customize the connector and the cable of super large-scale, effectively avoided adopting connector and cable and the low problem of equipment dependability that causes of the super large-scale of customization, thereby improved the reliability of equipment.The connector that the technical scheme of present embodiment adopts can pass through bigger electric current, has satisfied the requirement of big electric current, makes this connector can bear higher-wattage, has improved the performance of equipment, thereby has realized under high power, carrying out process exploitation, has increased process window.
The structural representation of a kind of lower electrode device that Fig. 7 provides for the embodiment of the invention two, Fig. 8 are the end view of Fig. 7, and like Fig. 7 and shown in Figure 8, the lower electrode device of present embodiment further can comprise on the basis of the foregoing description one: radome 18.Radome 18 is arranged between bottom electrode 1 and the adaptation 2, and radome 18 can be used for adaptation 2 is fixed on the bottom electrode 1.And radome 18 can also be used to carry out electromagnetic shielding.Other structure in the lower electrode device can repeat no more referring to the description among the embodiment one here.
The structural representation of a kind of lower electrode device that Fig. 9 provides for the embodiment of the invention three, Figure 10 are that A-A is to cutaway view among Fig. 9, and like Fig. 9 and shown in Figure 10, this lower electrode device comprises: bottom electrode 1, adaptation 2 and radio-frequency power supply 3.Adaptation 2 is connected with radio-frequency power supply 3, and adaptation 2 is connected on the bottom electrode 1 through connector, and particularly, adaptation 2 can be installed on the bottom electrode 1 through the mode that is fixedly connected.
In the present embodiment, adaptation 2 can be connected through cable 4 with radio-frequency power supply 3.The needs of range ability were set when the length of cable 4 can be carried out elevating movement according to bottom electrode 1.
In the present embodiment, connector is a plug component 7.Figure 11 is the structural representation of adaptation among Fig. 9, and is shown in figure 11, and plug component 7 is arranged on the adaptation 2.Plug component 7 can be structure as a whole with adaptation 2, and perhaps plug component 7 is directly connected on the adaptation 2.Figure 12 is the structural representation of bottom electrode among Fig. 9, like Figure 11 and shown in Figure 12, offers the spliced eye 8 that matees with plug component 7 on the bottom electrode 1, and plug component 7 inserts spliced eyes 7 so that adaptation 2 is connected on the bottom electrode 1.Wherein, the dotted line that label 8 is identified among Figure 12 representes that spliced eye 8 is positioned at bottom electrode 1 inside.
In the present embodiment, the quantity of plug component 7 can be one or more, is that example describes with a plug component 7 in the present embodiment, in practical application, can also adopt a plurality of plug components 7 as required.The quantity of spliced eye 8 is identical with the quantity of plug component 7.The shape of the shape of spliced eye 8 and plug component 7 is complementary.Preferably, plug component 7 be shaped as column, for example: this column can comprise flat column, cylindric, semi-cylindrical or irregular column etc.; Spliced eye 8 be shaped as column, for example: this column can comprise flat column, cylindric, semi-cylindrical or irregular column etc.The material of plug component 7 can be metal, and preferably, the material of plug component 7 comprises copper, silver-plated copper or aluminium.Preferably, the width d of plug component 7 is more than or equal to 10mm.
In the present embodiment, preferably, spliced eye 8 can be the hole of band reed, and plug component 7 can be cylinder.
In the present embodiment, bottom electrode 1 can comprise electrostatic chuck (electrostatic chuck comprises dielectric ceramic layer and is embedded in the electrode layer in the dielectric ceramic layer) and pedestal, and electrostatic chuck is arranged on the pedestal; And it is shown in figure 12; Shown in the frame of broken lines is the radio frequency leading-in end of bottom electrode 1; Particularly, this radio frequency leading-in end can be a radio frequency and introduces post, and this radio frequency is introduced post and vertically is arranged in the mounting disc (all not illustrating in the relevant drawings of present embodiment) of lower electrode device; And introduce post through sheathed this radio frequency of pedestal and can make whole bottom electrode 1 be installed in the mounting disc, wherein pedestal is introduced post for being electrically connected with radio frequency.Then adaptation 2 can be connected in the radio frequency leading-in end through connector and makes adaptation 2 be connected on the bottom electrode 1; Particularly; Spliced eye 8 can be opened on the radio frequency leading-in end; Plug component 7 inserts spliced eye 8 and with realization plug component 7 is fixed on the radio frequency leading-in end on the bottom electrode 1, thereby realizes adaptation 2 is connected on the bottom electrode 1.
In the present embodiment, the radio-frequency current that connector passes through can be for more than the 100A, and the radio-frequency power that bears can be for more than the 3000W, so connector can satisfy the requirement of big electric current, and present embodiment need not to customize the connector and the cable of super large-scale.
The lower electrode device that present embodiment provides comprises bottom electrode, adaptation and radio-frequency power supply; Adaptation is connected with radio-frequency power supply and adaptation is connected on the bottom electrode through connector; Connector is a plug component; Plug component is arranged on the adaptation, offers spliced eye on the bottom electrode, and plug component inserts spliced eye so that adaptation is connected on the bottom electrode.The connector that the technical scheme of present embodiment adopts can pass through bigger electric current; Satisfied the requirement of big electric current; Need not to customize the connector and the cable of super large-scale; The connector of super large-scale of effectively having avoided adopting customization is with increase cost that cable causes and expend the problem of development time, thereby has reduced cost and saved the development time; Need not to customize the connector and the cable of super large-scale, effectively avoided the maintainable low problem of the low equipment that causes of versatility, thereby improved the maintainability of equipment owing to the connector and the cable of customization; Need not to customize the connector and the cable of super large-scale, effectively avoided adopting connector and cable and the low problem of equipment dependability that causes of the super large-scale of customization, thereby improved the reliability of equipment.The connector that the technical scheme of present embodiment adopts can pass through bigger electric current, has satisfied the requirement of big electric current, makes this connector can bear higher-wattage, has improved the performance of equipment, thereby has realized under high power, carrying out process exploitation, has increased process window.
The structural representation of a kind of lower electrode device that Figure 13 provides for the embodiment of the invention four; Figure 14 be among Figure 13 C-C to cutaway view; Like Figure 13 and shown in Figure 14, the lower electrode device of present embodiment further can comprise on the basis of the foregoing description three: radome 18.Radome 18 is arranged between bottom electrode 1 and the adaptation 2, and radome 18 can be used for adaptation 2 is fixed on the bottom electrode 1.And radome 18 can also be used to carry out electromagnetic shielding.Other structure in the lower electrode device can repeat no more referring to the description among the embodiment three here.
The structural representation of a kind of lower electrode device that Figure 15 provides for the embodiment of the invention five, Figure 16 are that C-C is to cutaway view among Figure 15, and like Figure 15 and shown in Figure 16, this lower electrode device comprises: bottom electrode 1, adaptation 2 and radio-frequency power supply 3.Adaptation 2 is connected with radio-frequency power supply 3, and adaptation 2 is connected on the bottom electrode 1 through connector, and particularly, adaptation 2 can be installed on the bottom electrode 1 through the mode that is fixedly connected.
In the present embodiment, adaptation 2 can be connected through cable 4 with radio-frequency power supply 3.The needs of range ability were set when the length of cable 4 can be carried out elevating movement according to bottom electrode 1.
In the present embodiment, connector is a plug component 9.Figure 17 is the structural representation of bottom electrode among Figure 15, and is shown in figure 17, and plug component 9 is arranged on the bottom electrode 1.Plug component 9 can be structure as a whole with bottom electrode 1, and perhaps plug component 9 is directly connected on the bottom electrode 1.Figure 18 is the structural representation of adaptation among Figure 15, like Figure 17 and shown in Figure 180, offers the spliced eye 10 that matees with plug component 9 on the adaptation 2, and plug component 9 inserts spliced eyes 10 so that adaptation 2 is connected on the bottom electrode 1.Wherein, the dotted line among Figure 18 representes that spliced eye 8 is positioned at adaptation 2 inside.
In the present embodiment, the quantity of plug component 9 can be one or more, is that example describes with a plug component 9 in the present embodiment, in practical application, can also adopt a plurality of plug components 9 as required.The quantity of spliced eye 10 is identical with the quantity of plug component 9.The shape of the shape of spliced eye 10 and plug component 9 is complementary.Preferably, plug component 9 be shaped as column, for example: this column can comprise flat column, cylindric, semi-cylindrical or irregular column etc.; Spliced eye 10 be shaped as column, for example: this column can comprise flat column, cylindric, semi-cylindrical or irregular column etc.The material of plug component 9 can be metal, and preferably, the material of plug component 9 comprises copper, silver-plated copper or aluminium.Preferably, the width d of plug component 9 is more than or equal to 10mm.
In the present embodiment, preferably, spliced eye 10 can be the hole of band reed, and plug component 9 can be cylinder.
In the present embodiment, bottom electrode 1 can comprise electrostatic chuck (electrostatic chuck comprises dielectric ceramic layer and is embedded in the electrode layer in the dielectric ceramic layer) and pedestal, and electrostatic chuck is arranged on the pedestal; And it is shown in figure 17; Shown in the frame of broken lines is the radio frequency leading-in end of bottom electrode 1; Particularly, this radio frequency leading-in end can be a radio frequency and introduces post, and this radio frequency is introduced post and vertically is arranged in the mounting disc (all not illustrating in the relevant drawings of present embodiment) of lower electrode device; And introduce post through sheathed this radio frequency of pedestal and can make whole bottom electrode 1 be installed in the mounting disc, wherein pedestal is introduced post for being electrically connected with radio frequency.Then adaptation 2 can be connected in the radio frequency leading-in end through connector and makes adaptation 2 be connected on the bottom electrode 1.Particularly, plug component 9 can be arranged on the radio frequency leading-in end, and plug component 9 inserts spliced eye 10 and with realization adaptation 2 is fixed on the radio frequency leading-in end on the bottom electrode 1, thereby realizes adaptation 2 is connected on the bottom electrode 1.
In the present embodiment, the radio-frequency current that connector passes through can be for more than the 100A, and the radio-frequency power that bears can be for more than the 3000W, so connector can satisfy the requirement of big electric current, and present embodiment need not to customize the connector and the cable of super large-scale.
The lower electrode device that present embodiment provides comprises bottom electrode, adaptation and radio-frequency power supply; Adaptation is connected with radio-frequency power supply and adaptation is connected on the bottom electrode through connector; Connector is a plug component; Plug component is arranged on the bottom electrode, offers spliced eye on the adaptation, and plug component inserts spliced eye so that adaptation is connected on the bottom electrode.The connector that the technical scheme of present embodiment adopts can pass through bigger electric current; Satisfied the requirement of big electric current; Need not to customize the connector and the cable of super large-scale; The connector of super large-scale of effectively having avoided adopting customization is with increase cost that cable causes and expend the problem of development time, thereby has reduced cost and saved the development time; Need not to customize the connector and the cable of super large-scale, effectively avoided the maintainable low problem of the low equipment that causes of versatility, thereby improved the maintainability of equipment owing to the connector and the cable of customization; Need not to customize the connector and the cable of super large-scale, effectively avoided adopting connector and cable and the low problem of equipment dependability that causes of the super large-scale of customization, thereby improved the reliability of equipment.The connector that the technical scheme of present embodiment adopts can pass through bigger electric current, has satisfied the requirement of big electric current, makes this connector can bear higher-wattage, has improved the performance of equipment, thereby has realized under high power, carrying out process exploitation, has increased process window.
The structural representation of a kind of lower electrode device that Figure 19 provides for the embodiment of the invention six; Figure 20 be among Figure 19 D-D to cutaway view; Like Figure 19 and shown in Figure 20, the lower electrode device of present embodiment further can comprise on the basis of the foregoing description five: radome 18.Radome 18 is arranged between bottom electrode 1 and the adaptation 2, and radome 18 can be used for adaptation 2 is fixed on the bottom electrode 1.And radome 18 can also be used to carry out electromagnetic shielding.Other structure in the lower electrode device can repeat no more referring to the description among the embodiment five here.
Among above-mentioned each embodiment provided by the invention, the electrode of bottom electrode can drive bottom electrode and carry out elevating movement, because adaptation is connected on the bottom electrode through connector, so bottom electrode can drive adaptation and carries out elevating movement.Frequently carry out to cause impact in the process of elevating movement at bottom electrode, thereby reduce bottom electrode and the reliability of adaptation in frequent elevating movement adaptation and bottom electrode.Be to improve bottom electrode and the adaptation reliability in frequent elevating movement, can control the speed of service that bottom electrode carries out elevating movement.Particularly, through the motor speed of control bottom electrode, control to realize the speed of service of bottom electrode being carried out elevating movement.Figure 21 is the sketch map of the speed of service of bottom electrode among the present invention; Shown in Figure 21 is the speed of service sketch map of bottom electrode one way up-down (promptly rising or the decline process); Shown in figure 21; Bottom electrode for quickening, at the uniform velocity, is deceleration at the C-D running speed at the B-C running speed at the A-B running speed.When bottom electrode adopts the speed of service described in Figure 21 to carry out elevating movement, can effectively avoid in the elevating movement impact, thereby improve bottom electrode and the adaptation reliability in frequent elevating movement adaptation and bottom electrode.
The structural representation of a kind of semiconductor equipment that Figure 22 provides for the embodiment of the invention seven, shown in figure 22, this semiconductor equipment comprises: reaction chamber 12 and lower electrode device, lower electrode device comprise bottom electrode 1, adaptation 2 and radio-frequency power supply 3.Adaptation 2 is connected with radio-frequency power supply 3, and adaptation 2 is connected on the bottom electrode 1 through connector.Bottom electrode 1 is arranged at the inside of reaction chamber 12.Particularly, adaptation 2 can be installed on the bottom electrode 1 through the mode that is fixedly connected.
Lower electrode device in the present embodiment can adopt the foregoing description one to embodiment six arbitrary described lower electrode device, repeats no more here.In the present embodiment, be that example describes with the lower electrode device described in the embodiment one, specific descriptions can be referring to embodiment one.In the present embodiment, semiconductor equipment is a plasma apparatus.
In the present embodiment, wait semiconductor equipment to comprise: magnetron 13 and DC power supply 14.Bottom electrode 1 can comprise electrostatic chuck and pedestal, is placed with wafer (not shown among Figure 22) on the electrostatic chuck.Reaction chamber 12 comprises cavity 121 and sputtering target material 122, and sputtering target material 122 is arranged at the top of cavity 121.Magnetron 13 is arranged at the top of reaction chamber 12.DC power supply 14 is connected in sputtering target material 122.Adaptation 2 is connected with bottom electrode 1 with radio-frequency power supply 3 respectively.Particularly, this semiconductor equipment is a Pvd equipment in the present embodiment.
The embodiment of the invention five also provides a kind of semiconductor equipment, and present embodiment eight is with the difference of the foregoing description seven: the semiconductor equipment in the present embodiment does not comprise magnetron and DC power supply.
The embodiment of the invention nine also provides a kind of semiconductor equipment, and the semiconductor equipment in the present embodiment comprises reaction chamber, radio-frequency power supply and lower electrode device.Reaction chamber comprises cavity and the top crown that is arranged at the cavity top, and radio-frequency power supply is connected in top crown.In the present embodiment, lower electrode device can adopt the foregoing description one to embodiment six arbitrary described lower electrode device, repeats no more here.
The embodiment of the invention nine also provides a kind of semiconductor equipment, and the semiconductor equipment in the present embodiment comprises reaction chamber, adaptation, radio-frequency power supply and lower electrode device.Reaction chamber comprises cavity and the dielectric window that is arranged at the cavity top, and radio-frequency power supply is connected with adaptation, and adaptation is connected in dielectric window.Inductance coil is arranged at the top of reaction chamber.In the present embodiment, lower electrode device can adopt the foregoing description one to embodiment six arbitrary described lower electrode device, repeats no more here.
In the semiconductor equipment that above-mentioned each embodiment of the present invention provides, lower electrode device comprises bottom electrode, adaptation and radio-frequency power supply, and adaptation is connected with radio-frequency power supply and adaptation is connected on the bottom electrode through connector.The connector that adopts among above-mentioned each embodiment of the present invention can pass through bigger electric current; Satisfied the requirement of big electric current; Need not to customize the connector and the cable of super large-scale; The connector of super large-scale of effectively having avoided adopting customization is with increase cost that cable causes and expend the problem of development time, thereby has reduced cost and saved the development time; Need not to customize the connector and the cable of super large-scale, effectively avoided the maintainable low problem of the low equipment that causes of versatility, thereby improved the maintainability of equipment owing to the connector and the cable of customization; Need not to customize the connector and the cable of super large-scale, effectively avoided adopting connector and cable and the low problem of equipment dependability that causes of the super large-scale of customization, thereby improved the reliability of equipment.
In sum, the semiconductor equipment that provides in the above embodiment of the present invention is a plasma apparatus, and this plasma equipment can be applicable to PVD equipment, CVD equipment or plasma etching equipment.Can also say that perhaps this plasma equipment can be applicable to CCP equipment, ICP equipment or ECR equipment.
It is understandable that above execution mode only is the illustrative embodiments that adopts for principle of the present invention is described, yet the present invention is not limited thereto.For the one of ordinary skilled in the art, under the situation that does not break away from spirit of the present invention and essence, can make various modification and improvement, these modification also are regarded as protection scope of the present invention with improving.
Claims (16)
1. lower electrode device comprises: bottom electrode, adaptation and radio-frequency power supply, and said adaptation is connected with said radio-frequency power supply, it is characterized in that, and said adaptation is connected on the said bottom electrode through connector.
2. lower electrode device according to claim 1; It is characterized in that said connector comprises link and installing component, offer first installing hole and second installing hole on the said link; Offer the 3rd installing hole on the said bottom electrode, offer the 4th installing hole on the said adaptation; Said installing component is fixed in said link on the said bottom electrode through first connecting hole and the 3rd connecting hole and said installing component also is fixed in said link on the said adaptation through second connecting hole and the 4th connecting hole, so that said adaptation is connected on the said bottom electrode.
3. lower electrode device according to claim 2 is characterized in that, the shape of said link comprises column or banded.
4. lower electrode device according to claim 2 is characterized in that the material of said link comprises copper, silver-plated copper or aluminium.
5. lower electrode device according to claim 2 is characterized in that, the quantity of said link is one or more.
6. lower electrode device according to claim 2 is characterized in that, the width of said link is more than or equal to 10mm.
7. lower electrode device according to claim 6 is characterized in that, if said link be shaped as band shape the time, the width of said link is more than or equal to 15mm.
8. lower electrode device according to claim 2 is characterized in that, said the 3rd installing hole is a screw, and said the 4th installing hole is a screw, and said installing component is a screw.
9. lower electrode device according to claim 1 is characterized in that, said connector is a plug component; Said plug component is arranged on the said adaptation, offers the spliced eye that matees with said plug component on the said bottom electrode, and said plug component inserts said spliced eye so that said adaptation is connected on the said bottom electrode.
10. lower electrode device according to claim 1 is characterized in that, said connector is a plug component; Said plug component is arranged on the said bottom electrode, offers the spliced eye that matees with said plug component on the said adaptation, and said plug component inserts said spliced eye so that said adaptation is connected on the said bottom electrode.
11. according to claim 9 or 10 described lower electrode devices, it is characterized in that, said plug component be shaped as column.
12., it is characterized in that the width of said plug component is more than or equal to 10mm according to claim 9 or 10 described lower electrode devices.
13., it is characterized in that the material of said plug component comprises copper, silver-plated copper or aluminium according to claim 9 or 10 described lower electrode devices.
14. lower electrode device according to claim 1 is characterized in that, also comprises: be arranged at the radome between said bottom electrode and the said adaptation.
15. a semiconductor equipment is characterized in that, comprising: reaction chamber and like the arbitrary described lower electrode device of claim 1 to 14, said bottom electrode is arranged at the inside of said reaction chamber.
16. semiconductor equipment according to claim 15 is characterized in that, said semiconductor equipment is a Pvd equipment.
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| CN201010591768.2A CN102548179B (en) | 2010-12-08 | 2010-12-08 | Lower electrode device and semiconductor equipment |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201010591768.2A CN102548179B (en) | 2010-12-08 | 2010-12-08 | Lower electrode device and semiconductor equipment |
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| CN102548179A true CN102548179A (en) | 2012-07-04 |
| CN102548179B CN102548179B (en) | 2016-04-20 |
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Cited By (1)
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| CN111326382A (en) * | 2018-12-17 | 2020-06-23 | 中微半导体设备(上海)股份有限公司 | Capacitive coupling plasma etching equipment |
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| CN102548179B (en) | 2016-04-20 |
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