CN102544197A - Drawing method of thin film solar cell and thin film solar cell device - Google Patents

Drawing method of thin film solar cell and thin film solar cell device Download PDF

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Publication number
CN102544197A
CN102544197A CN2011103047608A CN201110304760A CN102544197A CN 102544197 A CN102544197 A CN 102544197A CN 2011103047608 A CN2011103047608 A CN 2011103047608A CN 201110304760 A CN201110304760 A CN 201110304760A CN 102544197 A CN102544197 A CN 102544197A
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line
film
groove
solvable
film solar
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CN102544197B (en
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赵军
梅芳
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Top, Zhejiang electronics company limited
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SUNFLUX ENERGY TECHNOLOGY (HANGZHOU) Co Ltd
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

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Abstract

The invention relates to a drawing method, especially relates to a drawing method of a thin film solar cell and a thin film solar cell device. The drawing method comprises three drawing lines (P2, P3, P1). According to traditional technology, drawing is conducted on a transparent conductive oxide film layer by means of laser. The drawing line (P1) penetrates through the transparent conductive oxide film layer, forming a first groove, and the drawing of drawing lines (P2, P3) is conducted after a semiconductor is coated with a film and before a back electrode is coated with a film. The drawing line (P2) penetrates through the semiconductor film layer, forming a second groove, in parallel with the first groove. The drawing line (P3) is provided with a soluble line which is disposed on the semiconductor film layer and in parallel with the second groove by means of soluble materials, and the soluble line is used as a preparation layer. The drawing device of the thin film solar cell combines a laser drawing device and a soluble line forming device on the same mechanical platform. The drawing device of the thin film solar cell has simple producing technology, low cost and can better cell performance and have long-term stability.

Description

The scribble method of thin-film solar cells and equipment thereof
Technical field
The present invention relates to a kind of laser scribing technology, relate in particular to laser scribe method and equipment thereof that thin-film solar cells is produced.
Background technology
The production of thin-film solar cells module is extensively answered in laser scribing. can on the monolithic substrate, form a plurality of batteries and series connection formation battery modules through using laser scribing. and traditional handicraft adopts laser scribing P1, P2 and P3 usually 3 times; Wherein P1 is used for the laser scribing of TCO; Carry out semiconductor coated film then; P2 carries out the laser scribing of semiconductor film then, back electrode plated film then, and P3 carries out back electrode laser scribing then; Traditional handicraft P1, P2 and P3 need a scoring equipment respectively, and cost is higher.
Summary of the invention
One of the object of the invention provides the scribble method of the thin-film solar cells that a kind of accurate positioning of ruling, little, the effective cell area of dead band area and conversion efficiency are high, cost is low.
Two of the object of the invention provides the scoring equipment of the thin-film solar cells that a kind of location of ruling is simple accurately, cost is low.
First technical purpose of the present invention is achieved through following technical scheme:
The scribble method of thin-film solar cells; Be included in and carry out semiconductor coated film on the transparent conductive oxide rete and form semiconductor film, on said semiconductor coated film, carry out the back electrode plated film and form back electrode film and the line of three roads P1, P2 and P3; The P1 line uses laser that said transparent conductive oxide rete is rule according to conventional art; Said P1 line is passed through said transparent conductive oxide rete and is formed first groove, and said P2 line and P3 line are carried out in the time before with said back electrode plated film after said semiconductor coated film; Said P2 line is passed through said semiconductor film and is formed second groove that parallels with said first groove; The solvable lines that said P3 line use soluble material forms on said semiconductor film and said second groove parallels are as preparation layers.
Twice line P2 according to the invention and P3 are meant after said semiconductor coated film and in the time before the said back electrode plated film that all twice line P2 and P3 (the P3 line forms the preparation layers of the 3rd groove) can accomplish in the time period between said semiconductor coated film and said back electrode plated film simultaneously; Also can in this time period, accomplish successively.
Scribble method of the present invention has following four advantages at least:
1. twice of the present invention line P2 and P3 can be simultaneously said semiconductor coated film after with said back electrode plated film before during this period of time in carry out, and through 3 laser scribings of the solvable lines formation method release of employing traditional P, production method is simple;
2. P2 of the present invention line and P3 line are semiconductor coated film after and back electrode plated film in the time before, on same mechanical platform, carry out; There is not the position error between distinct device; The temperature that does not also need strict control glass substrate, the accurate positioning degree problem that the factors such as thermal expansion that do not exist the temperature difference to cause cause;
3. the dead band area be can reduce, effective cell area and conversion efficiency improved;
4. exempt the electric leakage that traditional P 3 laser scribings can avoid laser scribing residue for the third time to cause through forming solvable lines preparation layers, improve the battery device performance.
A kind of preferred as technical scheme of the present invention makes water or solvent remove said preparation layers behind said back electrode plated film and is deposited on the back electrode material on the said preparation layers, thereby on said back electrode film, forms the 3rd groove.
Soluble material that the present invention uses and said semiconductor film and said back electrode material layer can not bond, and making water or organic solvent carry out soaking and washing can peel off said solvable lines or remove.
A kind of preferred as technical scheme of the present invention, the spacing between the said adjacent trenches is 20~50 μ m.
Because twice line P2 and P3 (being that lines are printed) accomplish in same mechanical platform and equipment, do not have the position error between distinct device, also do not need the temperature of strict control glass substrate 100.Because the location that does not exist thermal expansion to cause changes, the spacing between the adjacent trenches can control to 20~50 μ m at an easy rate, much smaller than more than 200 microns of prior art, has reduced the dead band area.
A kind of preferred as technical scheme of the present invention, said soluble material is the soluble material ink, said solvable lines form through inkjet printing.
Second technical purpose of the present invention realizes through following technical scheme:
The scoring equipment of the scribble method of thin-film solar cells; Said scoring equipment comprises laser scribe apparatus; And said scoring equipment also comprises solvable line strip apparatus for converting; Said laser scribe apparatus and said solvable line strip apparatus for converting are incorporated on the same mechanical platform, and the solvable lines preparation layers of using first groove, second groove of said laser scribe apparatus formation and using solvable line strip apparatus for converting to form is parallel to each other.
The laser scribing equipment of conventional films solar cell needs three laser scribing machines at least, and the laser scribing machine is the bigger equipment of cost in the thin-film solar cells production.
The scoring equipment of thin-film solar cells of the present invention can only use a laser scribe apparatus, is used to carry out P1 line and P2 line; Be equipped with solvable line strip apparatus for converting simultaneously, be used to form the P3 line, exempted traditional P 3 laser scribings, realize the special scribble method of the present invention, the equipment total cost of making significantly reduces.
A kind of preferred as technical scheme of the present invention, said solvable line strip apparatus for converting is ink jetting printing head or laser printing head.
Description of drawings
Fig. 1 a-Fig. 1 f is the sketch map of the scribble method of conventional films solar cell;
Fig. 2 a-Fig. 2 f is the sketch map of the scribble method of thin-film solar cells of the present invention;
Fig. 3 is the sketch map of the scoring equipment of thin-film solar cells of the present invention;
Fig. 4 a is the process chart of the scribble method of conventional films solar cell;
Fig. 4 b is the process chart of the scribble method of thin-film solar cells of the present invention.
Embodiment
Below in conjunction with accompanying drawing the present invention is done further explain.
Fig. 1 series is for being the sketch map of the laser scribe method of conventional films solar cell.Fig. 1 a is the glass substrate 100 that has transparent oxide TCO rete 110; Receive the P1 of laser scribing for the first time and form TCO groove 114 (Fig. 1 b); Then glass substrate 100 is cleaned; Then on the TCO rete 110 after the line, plate semiconductor film 120 (Fig. 1 c), glass substrate 100 is accepted the P2 of laser scribing for the second time, forms semiconductor layer groove 124 (Fig. 1 d); Continue plating back electrode film 130 (Fig. 1 e) on the semiconductor film after the line 120 then; Glass substrate 100 is accepted laser scribing P3 for the third time; Form i.e. the 3rd groove 134 (Fig. 1 f) of back electrode groove; 134 need of the 3rd groove relate to dorsum electrode layer and get final product, but traditional P3 of laser scribing for the third time can penetrate back electrode film 130 and semiconductor film 120 simultaneously, and P3 line metacoxal plate will pass through to clean and remove the residual dust that P3 causes.Laser scribing 114 and 134 s' part belongs to dead band (distance is common more than 400 microns), to not contribution of current conversion.
Embodiment one
Fig. 2 series is the sketch map of the laser scribe method of thin-film solar cells of the present invention.Fig. 2 a is the substrate 100 that has transparent oxide TCO rete 110, receives the P1 of laser scribing for the first time and forms TCO groove 114 (Fig. 2 b), then glass substrate 100 is cleaned, then plating semiconductor film 120 (Fig. 2 c) on the TCO rete 110 after the line.
When using scoring equipment shown in Figure 3, glass substrate 100 receives two line P2 and P3 simultaneously, and laser scribing P2 penetrates semiconductor film 120 and forms second groove 126, sees Fig. 2 d; Ink jetting printing head is printed simultaneously at the opposite side of second groove 126 as solvable line strip forming apparatus and is formed soluble material lines 129 as the 3rd groove preparation layers, sees Fig. 2 d.
Back electrode film 130 is plated in continuation on semiconductor film 120; Water or organic solvent are cleaned removing solvable lines preparation layers 129 and to be deposited on the back electrode material on the solvable lines preparation layers 129, thereby on back electrode tunic 130, form the 3rd groove 134.
Because twice line P2 and P3 (being that lines are printed) accomplish in same mechanical platform and equipment, do not have the position error between distinct device, also do not need the temperature of strict control glass substrate 100.Because the location that does not exist thermal expansion to cause changes, the distance of second groove 126 and the 3rd groove preparation layers 129 can control to 20 microns at an easy rate.Can reduce the area in dead band, compare with traditional thin-film solar cells, photoelectric conversion efficiency can improve 2%~5% at least.
Fig. 3 can show operation principle of the present invention more intuitively.The glass substrate 100 of having accomplished P1 line 114 and semiconductor coated film 120 keeps relative motion with laser aid and solvable line strip apparatus for converting.For example, glass substrate 100 operations, it is static that laser aid and solvable line strip apparatus for converting keep.P2 laser head 1 emitted laser bundle 2 marks second groove 126 that parallels with first groove 114 120 layers of semiconductor films, and simultaneously ink jetting printing head is printed at the opposite side of second groove 126 as solvable line strip forming apparatus 3 and formed and the preparation layers of first groove 114 solvable lines 129 parallel with second groove 126 as the 3rd groove.Two steps are carried out in same equipment simultaneously.
Embodiment two
Laser scribe method is with embodiment one.Different is that glass substrate 100 receives the second road laser scribing P2 earlier when using scoring equipment shown in Figure 3, and laser scribing P2 penetrates semiconductor film 120 and forms second groove 126, sees Fig. 2 d; After second groove 126 formed, the laser printing head was printed at the opposite side of second groove 126 as solvable line strip forming apparatus 3 and is formed soluble material lines 129 as the 3rd groove preparation layers, sees Fig. 2 d.
Back electrode film 130 is plated in continuation on semiconductor film 120; Water or organic solvent are cleaned removing solvable lines preparation layers 129 and to be deposited on the back electrode material on the solvable lines preparation layers 129, thereby on back electrode tunic 130, form the 3rd groove 134.
Also can find out from the contrast of Fig. 4 a and Fig. 4 b, accomplish the electric leakage that the 3rd groove can avoid the laser scribing residue to cause, improve the battery device performance through inkjet printing.
This specific embodiment only is to explanation of the present invention; It is not a limitation of the present invention; Those skilled in the art can make the modification that does not have creative contribution to present embodiment as required after reading this specification, but as long as in claim scope of the present invention, all receive the protection of Patent Law.

Claims (5)

1. the scribble method of thin-film solar cells; Be included in and carry out semiconductor coated film on the transparent conductive oxide rete and form semiconductor film, on said semiconductor coated film, carry out the back electrode plated film and form back electrode film and the line of three roads P1, P2 and P3; The P1 line uses laser that said transparent conductive oxide rete is rule; Said P1 line is passed through said transparent conductive oxide rete and formed first groove, it is characterized in that: said P2 line and P3 line are carried out in the time before with said back electrode plated film after said semiconductor coated film; Said P2 line is passed through said semiconductor film and is formed second groove that parallels with said first groove; The solvable lines that said P3 line use soluble material forms on said semiconductor film and said second groove parallels are as preparation layers.
2. the scribble method of thin-film solar cells according to claim 1; It is characterized in that: behind said back electrode plated film, make water or solvent remove said preparation layers and be deposited on the back electrode material on the said preparation layers, thereby on said back electrode film, form the 3rd groove.
3. the scribble method of thin-film solar cells according to claim 1 and 2, it is characterized in that: said soluble material is the soluble material ink, said solvable lines form through inkjet printing.
4. the scoring equipment of the scribble method of thin-film solar cells according to claim 1; Comprise laser scribe apparatus; It is characterized in that: said scoring equipment also comprises solvable line strip apparatus for converting; Said laser scribe apparatus and said solvable line strip apparatus for converting are incorporated on the same mechanical platform, use said laser scribe apparatus second groove that forms and the solvable lines preparation layers of using solvable line strip apparatus for converting to form to be parallel to each other.
5. the scoring equipment of thin-film solar cells according to claim 4, it is characterized in that: said solvable line strip apparatus for converting is ink jetting printing head or laser printing head.
CN201110304760.8A 2010-10-12 2011-10-10 The scribble method of thin-film solar cells and equipment thereof Active CN102544197B (en)

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US40488210P 2010-10-12 2010-10-12
US40487810P 2010-10-12 2010-10-12
US40488110P 2010-10-12 2010-10-12
US61/404,881 2010-10-12
USUS61/404882 2010-10-12
US61/404,878 2010-10-12
US61/404,882 2010-10-12
USUS61/404878 2010-10-12
USUS61/404881 2010-10-12

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CN2011103047627A Pending CN102593238A (en) 2010-10-12 2011-10-10 Laser scribing method and apparatus thereof for thin-film solar cell
CN201110304763.1A Active CN102554472B (en) 2010-10-12 2011-10-10 Lineation method and apparatus for thin-film solar cell
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CN201110304763.1A Active CN102554472B (en) 2010-10-12 2011-10-10 Lineation method and apparatus for thin-film solar cell

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* Cited by examiner, † Cited by third party
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CN103489964A (en) * 2013-10-15 2014-01-01 山东禹城汉能光伏有限公司 Manufacturing method of BIPV (Building Integrated Photovoltaics) thin-film solar cell
CN103887368A (en) * 2014-03-07 2014-06-25 京东方科技集团股份有限公司 Solar cell integration inner joint assembly, manufacturing method thereof and solar cell
CN106670655A (en) * 2017-01-22 2017-05-17 旭科新能源股份有限公司 Laser scribing system and control method for manufacturing flexible substrate solar cell
CN109585573A (en) * 2018-11-05 2019-04-05 武汉三工智能装备制造有限公司 HIT battery and its metal grid lines printing process
CN110091069A (en) * 2019-04-09 2019-08-06 大族激光科技产业集团股份有限公司 Laser strip method

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CN104694882A (en) * 2015-03-19 2015-06-10 中国建材国际工程集团有限公司 Substrate film coating process method
CN106972065B (en) * 2017-03-03 2019-01-29 浙江爱旭太阳能科技有限公司 Using the p-type PERC double-sided solar battery and preparation method of laser labelling contraposition
CN108987511A (en) * 2018-07-23 2018-12-11 成都中建材光电材料有限公司 A kind of integrated approach of cadmium telluride thin-film battery
CN109888027A (en) * 2019-01-18 2019-06-14 北京铂阳顶荣光伏科技有限公司 Back electrode, solar battery and preparation method thereof
CN116154032A (en) * 2021-11-19 2023-05-23 宁德时代新能源科技股份有限公司 Apparatus for manufacturing solar cell and method of manufacturing solar cell

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Publication number Priority date Publication date Assignee Title
CN103489964A (en) * 2013-10-15 2014-01-01 山东禹城汉能光伏有限公司 Manufacturing method of BIPV (Building Integrated Photovoltaics) thin-film solar cell
CN103887368A (en) * 2014-03-07 2014-06-25 京东方科技集团股份有限公司 Solar cell integration inner joint assembly, manufacturing method thereof and solar cell
CN103887368B (en) * 2014-03-07 2016-05-11 京东方科技集团股份有限公司 The integrated inline assembly of solar cell and preparation method, solar cell
CN106670655A (en) * 2017-01-22 2017-05-17 旭科新能源股份有限公司 Laser scribing system and control method for manufacturing flexible substrate solar cell
CN109585573A (en) * 2018-11-05 2019-04-05 武汉三工智能装备制造有限公司 HIT battery and its metal grid lines printing process
CN110091069A (en) * 2019-04-09 2019-08-06 大族激光科技产业集团股份有限公司 Laser strip method

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CN102554472B (en) 2015-02-04
CN102593238A (en) 2012-07-18
CN102610691A (en) 2012-07-25
CN102544197B (en) 2015-08-05
CN102554472A (en) 2012-07-11

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Inventor after: Zhao Jun

Inventor after: Mei Fang

Inventor after: Chen Jinliang

Inventor after: Su Yongshun

Inventor before: Zhao Jun

Inventor before: Mei Fang

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Address after: 312300 No. 7 Chang ho Road, Binhai New Town, Zhejiang, Shaoxing

Patentee after: Top, Zhejiang electronics company limited

Address before: 311215, No. 1202, No. 66, building No. 1, Xiaoshan District, Zhejiang, Hangzhou

Patentee before: Sunflux Energy Technology (Hangzhou) Co., Ltd.