CN108987511A - A kind of integrated approach of cadmium telluride thin-film battery - Google Patents
A kind of integrated approach of cadmium telluride thin-film battery Download PDFInfo
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- CN108987511A CN108987511A CN201810812297.XA CN201810812297A CN108987511A CN 108987511 A CN108987511 A CN 108987511A CN 201810812297 A CN201810812297 A CN 201810812297A CN 108987511 A CN108987511 A CN 108987511A
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- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 title claims abstract description 81
- 239000010409 thin film Substances 0.000 title claims abstract description 37
- 238000013459 approach Methods 0.000 title claims abstract description 20
- 238000000608 laser ablation Methods 0.000 claims abstract description 19
- 239000011521 glass Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims description 23
- 229920002120 photoresistant polymer Polymers 0.000 claims description 21
- 238000007711 solidification Methods 0.000 claims description 14
- 230000008023 solidification Effects 0.000 claims description 14
- 239000010408 film Substances 0.000 claims description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 7
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 7
- 238000009413 insulation Methods 0.000 claims description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 230000031700 light absorption Effects 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 15
- 238000012546 transfer Methods 0.000 abstract description 2
- 238000005530 etching Methods 0.000 description 13
- 238000011049 filling Methods 0.000 description 10
- 238000002360 preparation method Methods 0.000 description 5
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 229910052793 cadmium Inorganic materials 0.000 description 3
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000006101 laboratory sample Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Life Sciences & Earth Sciences (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention discloses a kind of integrated approach of cadmium telluride thin-film battery, the top-down structure of cadmium telluride diaphragm solar battery is successively: back electrode layer, Window layer and cadmium telluride light absorbing layer, transparency conducting layer, substrate of glass, pass through two step laser ablations, complete the integrated of cadmium telluride thin-film battery, this method can be good at controlling groove dead zone, short circuit current, the fill factor for improving cadmium telluride thin-film battery, to improve the transfer efficiency of cadmium telluride thin-film battery.
Description
Technical field
The present invention relates to cadmium telluride diaphragm solar battery technical fields, and in particular to a kind of collection of cadmium telluride thin-film battery
At method.
Background technique
Cadmium telluride (CdTe) is II-VI group compound direct energy-gap semiconductor, forbidden bandwidth 1.46eV, Cadimium telluride thin film
Solar cell is a kind of compound semiconductor film solar cell using CdTe as absorbed layer, has the absorption coefficient of light high, converts
Feature high-efficient, low in cost.
At present there are mainly two types of the integration modes of cadmium telluride diaphragm solar battery, one is Mechanical lithography, another kind is
Laser ablation, wherein laser ablation is because of its excellent etching speed, and etching effect is using commonplace, but at present either
Mechanical lithography or laser ablation are all to complete to integrate hull cell by three steps etching, i.e. P1/P2/P3 is caused in this way
Result be exactly to etch dead zone to be difficult to be controlled, it is generally all larger, about 300 μm or so, to influence the performance of battery, reduce
Output power, especially to scale of mass production type factory, the power output of cumulative effect is very big, and loss is also just big.
Summary of the invention
In view of this, the application provides a kind of integrated approach of cadmium telluride thin-film battery, three steps etching can be effectively solved
The technical issues of dead zone is big, output power reduces is etched in method.
In order to solve the above technical problems, technical solution provided by the invention is a kind of integrated side of cadmium telluride thin-film battery
Method includes the following steps:
(1) transparency conducting layer, Window layer and cadmium telluride light absorbing layer are sequentially depositing from the bottom to top on the glass substrate；
(2) first time laser ablation cadmium telluride light absorbing layer, Window layer and transparency conducting layer obtain the first groove groove；
(3) photoresist of insulation is filled in the first groove groove, is exposed, is obtained solidification photoresist；
(4) second of laser ablation cadmium telluride light absorbing layer and Window layer are selected, the second groove groove is obtained；
(5) back electrode layer is continuously filled in the cadmium telluride light absorbing layer, solidification photoresist and the second groove groove side,
The second groove groove other side is exposed, and must connect integrated cadmium telluride thin-film battery.
The exposed part of the second groove groove can be described as the second groove groove exposed area after the filling of step (5) back electrode
P2’。
The part of the second groove trench fill can be described as the second groove trench fill area after the filling of step (5) back electrode
P2”。
Preferably, the material of the transparency conducting layer is transparent selected from FTO transparent conductive film, ITO nesa coating or AZO
Any one in conductive film.
Preferably, the material of the Window layer is cadmium sulfide.
Preferably, the cadmium telluride light absorbing layer with a thickness of 4-5 μm.
Preferably, the wavelength of the first time laser is 355nm.
Preferably, the width of the first groove groove is 20-25 μm.
Preferably, the wavelength of second of the laser is 532nm.
Preferably, the width of the second groove groove is 50-60 μm.
Preferably, the spacing of the first groove groove and the second groove groove is 20-25 μm.
Preferably, the material of the back electrode layer is molybdenum or nickel.
Compared with prior art, detailed description are as follows by the application:
The integrated approach of cadmium telluride thin-film battery of the invention fills to form battery cascade by two steps etching and back electrode
Mode, it can be achieved that groove dead zone control, while can realize P2 '-P2 " 0 distance --- the i.e. control of edge to edge of ruling span,
100nm is can be controlled in this can enable the total dead zone of three lines hereinafter, effective generating area of battery is promoted, to promote the short of battery
Road electric current, fill factor improve transfer efficiency and output power.
Detailed description of the invention
It, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical solution in the prior art
Embodiment or attached drawing needed to be used in the description of the prior art be briefly described, it should be apparent that, it is described below
Attached drawing is some embodiments of the present invention, for those of ordinary skill in the art, before not making the creative labor
It puts, is also possible to obtain other drawings based on these drawings.
Fig. 1 is that two steps of cadmium telluride cells of the invention etch integration mode figure；
Fig. 2 is that three steps of traditional cadmium telluride thin-film battery etch integration mode figure；
Wherein, 10- etches dead zone；11- substrate of glass；12- transparency conducting layer；13- Window layer；14- cadmium telluride light absorption
Layer；15- back electrode layer；16- current direction；17- the first groove groove；18- the second groove groove exposed area P2 '；Second quarter of 19-
Line trenches fill area P2 "；20- etches dead zone；21- substrate of glass；22- transparency conducting layer；23- Window layer；24- cadmium telluride light is inhaled
Receive layer；25- back electrode layer；26- current direction；27- the first groove groove；28- the second groove groove；29-third groove grooves.
Specific embodiment
It is right combined with specific embodiments below in order to make those skilled in the art more fully understand technical solution of the present invention
The preferred embodiments of the invention are described, but it is to be understood that these descriptions are only to further illustrate spy of the invention
Advantage of seeking peace rather than to the invention patent require limitation.Based on the embodiments of the present invention, those of ordinary skill in the art
Every other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
The present invention provides a kind of integrated approach of cadmium telluride thin-film battery, includes the following steps:
(1) transparency conducting layer, Window layer and cadmium telluride light absorbing layer are sequentially depositing from the bottom to top on the glass substrate；
(2) first time laser ablation cadmium telluride light absorbing layer, Window layer and transparency conducting layer are selected, the first groove ditch is obtained
Slot；
(3) photoresist of insulation is filled in the first groove groove, is exposed, is obtained solidification photoresist；
(4) second of laser ablation cadmium telluride light absorbing layer and Window layer are selected, the second groove groove is obtained；
(5) back electrode layer is continuously filled in the cadmium telluride light absorbing layer, solidification photoresist and the second groove groove side,
The second groove groove other side is exposed；
(6) it is packaged to obtain integrated cadmium telluride thin-film battery of connecting using encapsulating material and back-panel glass.
The exposed part of the second groove groove can be described as the second groove groove exposed area after the filling of step (5) back electrode
P2’。
The part of the second groove trench fill can be described as the second groove trench fill area after the filling of step (5) back electrode
P2”。
The material of transparency conducting layer is in FTO transparent conductive film, ITO nesa coating or AZO transparent conductive film
Any one；In embodiments herein, the material of transparency conducting layer is preferably FTO transparent conductive film, the electrically conducting transparent
Layer can be prepared using magnetron sputtering method or APCVD method.
The material of Window layer be cadmium sulfide, the Window layer with a thickness of 60nm-100nm；Magnetic can be used in the Window layer
Control sputtering method preparation.
The cadmium telluride light absorbing layer with a thickness of 4-5 μm, CSS depositional mode can be used in the cadmium telluride absorbed layer.
The wavelength of the first time laser is 355nm.
The width of the first groove groove is 20-25 μm.
The wavelength of second of the laser is 532nm.
The width of the second groove groove is 50-60 μm.
The spacing of the first groove groove and the second groove groove is 20-25 μm.
The material of the back electrode layer is molybdenum or nickel.
Embodiment 1
The integrated approach of cadmium telluride cells as shown in Figure 1, includes the following steps:
(1) transparency conducting layer 12, Window layer 13 and cadmium telluride light absorption are sequentially depositing from the bottom to top in substrate of glass 11
Layer 14；
(2) first time laser ablation cadmium telluride light absorbing layer, Window layer and transparency conducting layer are selected, the first groove groove is obtained
17；
(3) photoresist of insulation is filled in the first groove groove, is exposed, is obtained solidification photoresist；
(4) second of laser ablation light absorbing layer and Window layer are selected, the second groove groove is obtained；
(5) back electrode layer is continuously filled in the cadmium telluride light absorbing layer, solidification photoresist and the second groove groove side
15, the second groove groove other side is exposed, and the series connection that must etch dead zone 10 integrates cadmium telluride thin-film battery, current direction Fig. 1
Middle current direction 16.
The exposed part of the second groove groove can be described as the second groove groove exposed area after the filling of step (5) back electrode
P2’18。
The part of the second groove trench fill can be described as the second groove trench fill area after the filling of step (5) back electrode
P2”19。
The material of the transparency conducting layer is FTO transparent conductive film；The transparency conducting layer is prepared using magnetron sputtering method.
The material of the Window layer be cadmium sulfide, the Window layer with a thickness of 60nm；The Window layer is splashed using magnetic control
Penetrate method preparation.
The cadmium telluride light absorbing layer with a thickness of 4 μm, the cadmium telluride absorbed layer use CSS depositional mode.
The wavelength of the first time laser is 355nm.
The width of the first groove groove is 20 μm.
The wavelength of second of the laser is 532nm.
The width of the second groove groove is 50 μm.
The spacing of the first groove groove and the second groove groove is 20 μm.
The material of the back electrode layer is molybdenum.
Embodiment 2
A kind of integrated approach of cadmium telluride thin-film battery, includes the following steps:
(1) transparency conducting layer, Window layer and cadmium telluride light absorbing layer are sequentially depositing from the bottom to top on the glass substrate；
(2) first time laser ablation cadmium telluride light absorbing layer, Window layer and transparency conducting layer are selected, the first groove ditch is obtained
Slot；
(3) photoresist of insulation is filled in the first groove groove, is exposed, is obtained solidification photoresist；
(4) second of laser ablation cadmium telluride light absorbing layer and Window layer are selected, the second groove groove is obtained；
(5) back electrode layer is continuously filled in the cadmium telluride light absorbing layer, solidification photoresist and the second groove groove side,
The second groove groove other side is exposed, and must connect integrated cadmium telluride thin-film battery.
The exposed part of the second groove groove can be described as the second groove groove exposed area after the filling of step (5) back electrode
P2’。
The part of the second groove trench fill can be described as the second groove trench fill area after the filling of step (5) back electrode
P2”。
The material of the transparency conducting layer is FTO transparent conductive film, and the transparency conducting layer can use APCVD legal system
It is standby.
The material of the Window layer be cadmium sulfide, the Window layer with a thickness of 100nm；Magnetic control can be used in the Window layer
Sputtering method preparation.
The cadmium telluride light absorbing layer with a thickness of 5 μm, CSS depositional mode can be used in the cadmium telluride absorbed layer.
The wavelength of the first time laser is 355nm.
The width of the first groove groove is 25 μm.
The wavelength of second of the laser is 532nm.
The width of the second groove groove is 50 μm.
The spacing of the first groove groove and the second groove groove is 25 μm.
The material of the back electrode layer is molybdenum.
Embodiment 3
A kind of integrated approach of cadmium telluride thin-film battery, includes the following steps:
(1) transparency conducting layer, Window layer and cadmium telluride light absorbing layer are sequentially depositing from the bottom to top on the glass substrate；
(2) first time laser ablation cadmium telluride light absorbing layer, Window layer and transparency conducting layer are selected, the first groove ditch is obtained
Slot；
(3) photoresist of insulation is filled in the first groove groove, is exposed, is obtained solidification photoresist；
(4) second of laser ablation cadmium telluride light absorbing layer and Window layer are selected, the second groove groove is obtained；
(5) back electrode layer is continuously filled in the cadmium telluride light absorbing layer, solidification photoresist and the second groove groove side,
The second groove groove other side is exposed, and must connect integrated cadmium telluride thin-film battery.
The exposed part of the second groove groove can be described as the second groove groove exposed area after the filling of step (5) back electrode
P2’。
The part of the second groove trench fill can be described as the second groove trench fill area after the filling of step (5) back electrode
P2”。
The material of the transparency conducting layer is FTO transparent conductive film；The transparency conducting layer is prepared using magnetron sputtering method.
The material of the Window layer be cadmium sulfide, the Window layer with a thickness of 60nm；The Window layer is splashed using magnetic control
Penetrate method preparation.
The cadmium telluride light absorbing layer with a thickness of 4 μm, the cadmium telluride absorbed layer use CSS depositional mode.
The wavelength of the first time laser is 355nm.
The width of the first groove groove is 20 μm.
The wavelength of second of the laser is 532nm.
The width of the second groove groove is 60 μm.
The spacing of the first groove groove and the second groove groove is 20 μm.
The material of the back electrode layer is nickel.
Reference examples 1
The integrated approach of cadmium telluride cells as shown in Figure 2, includes the following steps:
(1) transparency conducting layer 22, Window layer 23 and cadmium telluride light absorption are sequentially depositing from the bottom to top in substrate of glass 21
Layer 24；
(2) first time laser ablation transparency conducting layer, Window layer and light absorbing layer are selected, the first groove groove 27 is obtained；
(3) photoresist of insulation is filled in the first groove groove, is exposed, is obtained solidification photoresist；
(4) second of laser ablation Window layer and light absorbing layer are selected, the second groove groove 28 is obtained；
(5) in the cadmium telluride light absorbing layer, solidification photoresist and the second groove trench fill back electrode layer 25；
(6) third time laser ablation back electrode layer, light absorbing layer and Window layer are selected, third groove groove 29 is obtained, quarter
The series connection for losing dead zone 20 integrates cadmium telluride thin-film battery, and current direction is current direction 26 in Fig. 2.
The material of the transparency conducting layer is FTO transparent conductive film；The transparency conducting layer is prepared using magnetron sputtering method.
The material of the Window layer be cadmium sulfide, the Window layer with a thickness of 60nm；The Window layer is splashed using magnetic control
Penetrate method preparation.
The cadmium telluride light absorbing layer with a thickness of 4 μm, the cadmium telluride absorbed layer use CSS depositional mode.
The wavelength of the first time laser is 355nm.
The width of the first groove groove is 20 μm.
The wavelength of second of the laser is 532nm.
The width of the second groove groove is 50 μm.
The spacing of the first groove groove and the second groove groove is 20 μm.
The wavelength of the third time laser is 532nm.
The width of the third groove groove is 50 μm.
The spacing of the second groove groove and the third groove groove is 20 μm.
The material of the back electrode layer is nickel.
Embodiment 4
Etching mode influences the performance of cadmium telluride thin-film battery
Laboratory sample: the cadmium telluride thin-film battery sample for the two steps etching that embodiment 1-3 and reference examples 1 obtain, reference examples 1
The cadmium telluride thin-film battery sample of obtained three steps etching.
Experimental method: it is tested for the property using method described in GB/T 6495.1-1996.
Experimental result: being shown in Table 1- etching mode influences the performance of cadmium telluride thin-film battery.
1 etching mode of table influences the performance of cadmium telluride thin-film battery
As shown in Table 1, two step etching phases of the invention can be substantially reduced cadmium telluride too for three traditional step etching methods
It is positive can battery etching dead zone so that the total dead zone of three lines can be controlled in 100nm hereinafter, promoting effective generating area of battery, from
And the short circuit current, open-circuit voltage, fill factor of battery are promoted, battery comprehensive performance is more excellent.
The above is only the preferred embodiment of the present invention, it is noted that above-mentioned preferred embodiment is not construed as pair
Limitation of the invention, protection scope of the present invention should be defined by the scope defined by the claims..For the art
For those of ordinary skill, without departing from the spirit and scope of the present invention, several improvements and modifications can also be made, these change
It also should be regarded as protection scope of the present invention into retouching.
Claims (10)
1. a kind of integrated approach of cadmium telluride thin-film battery, which comprises the steps of:
(1) transparency conducting layer, Window layer and cadmium telluride light absorbing layer are sequentially depositing from the bottom to top on the glass substrate；
(2) first time laser ablation cadmium telluride light absorbing layer, Window layer and transparency conducting layer obtain the first groove groove；
(3) photoresist of insulation is filled in the first groove groove, is exposed, is obtained solidification photoresist；
(4) second of laser ablation cadmium telluride light absorbing layer and Window layer, obtain the second groove groove；
(5) back electrode layer is continuously filled in the cadmium telluride light absorbing layer, solidification photoresist and the second groove groove side, second
The groove groove other side is exposed, and must connect integrated cadmium telluride thin-film battery.
2. the integrated approach of cadmium telluride thin-film battery according to claim 1, which is characterized in that the transparency conducting layer
Material is any one in FTO transparent conductive film, ITO nesa coating or AZO transparent conductive film.
3. the integrated approach of cadmium telluride thin-film battery according to claim 1, which is characterized in that the material of the Window layer
For cadmium sulfide.
4. the integrated approach of cadmium telluride thin-film battery according to claim 1, which is characterized in that the cadmium telluride light absorption
Layer with a thickness of 4-5 μm.
5. the integrated approach of cadmium telluride thin-film battery according to claim 1, which is characterized in that the first time laser
Wavelength is 355nm.
6. the integrated approach of cadmium telluride thin-film battery according to claim 1, which is characterized in that the first groove groove
Width be 20-25 μm.
7. the integrated approach of cadmium telluride thin-film battery according to claim 1, which is characterized in that second of the laser
Wavelength is 532nm.
8. the integrated approach of cadmium telluride thin-film battery according to claim 1, which is characterized in that the second groove groove
Width be 50-60 μm.
9. the integrated approach of cadmium telluride thin-film battery according to claim 1, which is characterized in that the first groove groove
Spacing with the second groove groove is 20-25 μm.
10. the integrated approach of cadmium telluride thin-film battery according to claim 1, which is characterized in that the back electrode layer
Material is molybdenum or nickel.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113594301A (en) * | 2021-07-30 | 2021-11-02 | 成都中建材光电材料有限公司 | Method for reducing series resistance of solar cell and cell preparation method |
| CN114335200A (en) * | 2021-12-31 | 2022-04-12 | 邯郸中建材光电材料有限公司 | Cadmium telluride thin film solar cell module and preparation method thereof |
| CN114725242A (en) * | 2022-04-08 | 2022-07-08 | 成都中建材光电材料有限公司 | Method for improving power generation efficiency of mass-produced cadmium telluride thin film battery |
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| CN113594301B (en) * | 2021-07-30 | 2023-06-16 | 成都中建材光电材料有限公司 | Method for reducing series resistance of solar cell and cell preparation method |
| CN114335200A (en) * | 2021-12-31 | 2022-04-12 | 邯郸中建材光电材料有限公司 | Cadmium telluride thin film solar cell module and preparation method thereof |
| CN114725242A (en) * | 2022-04-08 | 2022-07-08 | 成都中建材光电材料有限公司 | Method for improving power generation efficiency of mass-produced cadmium telluride thin film battery |
| CN114725242B (en) * | 2022-04-08 | 2023-06-06 | 成都中建材光电材料有限公司 | Method for improving power generation efficiency of mass-produced cadmium telluride thin film battery |
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Application publication date: 20181211 |