CN103489964A - Manufacturing method of BIPV (Building Integrated Photovoltaics) thin-film solar cell - Google Patents
Manufacturing method of BIPV (Building Integrated Photovoltaics) thin-film solar cell Download PDFInfo
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- CN103489964A CN103489964A CN201310480653.XA CN201310480653A CN103489964A CN 103489964 A CN103489964 A CN 103489964A CN 201310480653 A CN201310480653 A CN 201310480653A CN 103489964 A CN103489964 A CN 103489964A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 40
- 239000010409 thin film Substances 0.000 title claims abstract description 28
- 239000010408 film Substances 0.000 claims abstract description 114
- 239000000758 substrate Substances 0.000 claims abstract description 65
- 238000005507 spraying Methods 0.000 claims abstract description 46
- 239000004065 semiconductor Substances 0.000 claims abstract description 38
- 238000000034 method Methods 0.000 claims abstract description 30
- 239000007921 spray Substances 0.000 claims abstract description 20
- 238000004140 cleaning Methods 0.000 claims abstract description 16
- 239000011521 glass Substances 0.000 claims abstract description 9
- 238000013084 building-integrated photovoltaic technology Methods 0.000 claims description 24
- 238000005406 washing Methods 0.000 claims description 21
- 238000002791 soaking Methods 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 15
- 229920000784 Nomex Polymers 0.000 claims description 7
- 150000001448 anilines Chemical class 0.000 claims description 7
- 239000004763 nomex Substances 0.000 claims description 7
- 229920006389 polyphenyl polymer Polymers 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims 4
- 230000000694 effects Effects 0.000 abstract description 5
- 239000002195 soluble material Substances 0.000 abstract description 4
- 239000003795 chemical substances by application Substances 0.000 abstract 4
- 239000007888 film coating Substances 0.000 abstract 2
- 238000009501 film coating Methods 0.000 abstract 2
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 238000002834 transmittance Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
- H01L31/1888—Manufacture of transparent electrodes, e.g. TCO, ITO methods for etching transparent electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
- Y02A30/00—Adapting or protecting infrastructure or their operation
- Y02A30/60—Planning or developing urban green infrastructure
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/10—Photovoltaic [PV]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Laser Beam Processing (AREA)
Abstract
The invention relates to a manufacturing method of a BIPV (Building Integrated Photovoltaics) thin-film solar cell. The manufacturing method sequentially comprises the following steps of cleaning a TCO (Transparent Conductive Oxide) glass substrate; carrying out laser scribing on a TCO film; cleaning again; spraying a water-soluble stripping agent into a plurality of straight lines on the substrate through a plurality of spray heads by utilizing compressed air; carrying out film coating on a semiconductor; carrying out the laser scribing on a semiconductor film; carrying out the film coating on a back electrode; carrying out the laser scribing on the back electrode; carrying out soak cleaning. Because the stripping agent is a water-soluble material, a back electrode film positioned on a stripping agent part can be removed by being cleaned in a soak cleaning process, so that the manufacturing method disclosed by the invention omits the steps of the laser scribing of the TCO film or the semiconductor film compared with the traditional manufacturing method; because the stripping agent can be conveniently regulated in line width according to the diameter size of the spray holes of the spray heads by being sprayed through the spray heads, the wire width is relatively fixed by needing multiple back-and-forth scribing compared with the line width of a laser machine. The manufacturing method of the BIPV thin-film solar cell, which is disclosed by the invention, can increase the production efficiency, reduce the production cost and achieve the transparent effect by fast removing the back electrode film through spraying and cleaning.
Description
Background technology
The BIPV thin-film solar cells is all generally to adopt laser scribing to make at present, 4 laser scribing of normal employing during traditional manufacturing technique is logical, be respectively: TCO film laser scoring, semiconductor film laser scoring, back electrode laser scoring, TCO film or semiconductor film laser scoring.TCO glass substrate (supplied materials) is first after cleaning, then carry out successively the step of the laser scribing of TCO film, semiconductor coated film, semiconductor film laser scribing, back electrode plated film, back electrode laser scribing, TCO film or semiconductor film laser scribing, to realize depicting transparent effect.There are 2 shortcomings at present in conventional process techniques.First, laser grooving and scribing live width window is too little, laser linewidth width and laser power are directly proportional, a kind of groove live width parameter of laser is fixed substantially, laser grooving and scribing width adjustable extent is too little, and higher due to the wider light transmittance of line width in TCO film or semiconductor film laser scoring process, therefore just need to carry out repeatedly reciprocal laser scoring to improve light transmittance, so production efficiency is low.The second, need to delineate a lot of bar lines while carrying out TCO film or semiconductor film laser scoring, board production capacity is a bottleneck, a Daepori leads to laser board (general 2 lasers) and needs to complete in 1,2 hour a flake products.If increase a plurality of laser boards, can significantly increase production cost.
Summary of the invention
The present invention, in order to overcome the deficiency of above technology, provides the manufacture method of the BIPV thin-film solar cells that a kind of live width width is adjustable, groove efficiency is high.
The present invention overcomes the technical scheme that its technical problem adopts:
The manufacture method of this BIPV thin-film solar cells in turn includes the following steps:
(1) the TCO glass substrate is cleaned; (2) substrate after cleaning is placed on the laser board and carries out TCO film laser scoring; (3) substrate after groove is cleaned again; (4) substrate after spraying is carried out to semiconductor coated film; (5) substrate after plated film is placed on the laser board and carries out the semiconductor film laser scoring; (6) water miscible remover is utilized compressed air pass through some shower nozzles and spray some straight lines on substrate; (7) substrate after groove is carried out to the back electrode plated film; (8) substrate after plated film is carried out to the back electrode laser scoring; (9) substrate after groove is carried out to soaking and washing, the back electrode film that is sprayed with the position of remover on substrate comes off in soaking and washing.
Above-mentioned remover is water-soluble poly phenyl amines material or solubility Nomex material.
In above-mentioned steps (6), the remover straight line live width of spraying is 0.01-5mm.
While in above-mentioned steps (6), spraying remover, when remover spraying direction parallels with the direction of laser scoring on the TCO film, some remover lines of spraying are discontinuous, every remover lines form the direction of the laser scoring on remover spraying direction and TCO film when perpendicular by the N section, and the remover lines are some continuous straight lines.
The manufacture method of this BIPV thin-film solar cells in turn includes the following steps:
(1) the TCO glass substrate is cleaned; (2) substrate after cleaning is placed on the laser board and carries out TCO film laser scoring; (3) substrate after groove is cleaned again; (4) water miscible remover is utilized compressed air pass through some shower nozzles and spray some straight lines on substrate; (5) substrate after spraying is carried out to semiconductor coated film; (6) substrate after plated film is placed on the laser board and carries out the semiconductor film laser scoring; (7) substrate after groove is carried out to the back electrode plated film; (8) substrate after plated film is carried out to the back electrode laser scoring; (9) substrate after groove is carried out to soaking and washing, the semiconductor film and the back electrode film that are sprayed with the position of remover on substrate come off in soaking and washing.
Above-mentioned remover is the high temperature resistant Nomex material of water-soluble poly phenyl amines material or solubility.
In above-mentioned steps (6), the remover straight line live width of spraying is 0.01-5mm.
While in above-mentioned steps (6), spraying remover, when remover spraying direction parallels with the direction of laser scoring on the TCO film, some remover lines of spraying are discontinuous, every the remover lines are comprised of the N section, when the direction of the laser scoring on remover spraying direction and TCO film is perpendicular, the remover lines are some continuous straight lines.
The invention has the beneficial effects as follows: remover is water-soluble material, therefore in the soaking and washing process, the back electrode film at remover position is removal capable of washing, thereby omitted the step of TCO film or semiconductor film laser scoring with respect to traditional manufacture method, because shower nozzle spraying remover can be according to the convenient live width of adjusting of the diameter of spray nozzle, therefore with respect to the relatively fixing back and forth groove that needs repeatedly of the live width of laser machine, the manufacture method of BIPV thin-film solar cells of the present invention can be enhanced productivity, reduce production costs, by spraying, cleaning can be removed the back electrode film fast, to reach transparent effect.
The accompanying drawing explanation
The BIPV thin-film solar cells manufacture method that Fig. 1 is traditional handicraft;
Fig. 2 is the first BIPV thin-film solar cells manufacture method of the present invention;
Fig. 3 is the second BIPV thin-film solar cells manufacture method of the present invention
Fig. 4 is remover of the present invention cross-sectional structure schematic diagram without remover zone when parallel with TCO film laser scoring;
Fig. 5 is the cross-sectional structure schematic diagram that remover of the present invention has the remover zone when parallel with TCO film laser scoring;
In figure, 1. back electrode 2. semiconductor film 3.TCO film 4. substrates.
Embodiment
Below in conjunction with accompanying drawing 1, accompanying drawing 2, accompanying drawing 3, accompanying drawing 4, the present invention will be further described for accompanying drawing 5.
As shown in Figure 2, the first manufacture method of this BIPV thin-film solar cells in turn includes the following steps:
1 is cleaned the TCO glass substrate; 2 are placed into the substrate 4 after cleaning on the laser board and carry out TCO film laser scoring; 3 clean the substrate 4 after groove again; 4 carry out semiconductor coated film by the substrate 4 after spraying; 5 are placed into the substrate 4 after plated film on the laser board and carry out the semiconductor film laser scoring; 6 utilize compressed air to pass through some shower nozzles water miscible remover sprays some straight lines on substrate 4; 7 carry out the back electrode plated film by the substrate 4 after groove; 8 carry out the back electrode laser scoring by the substrate 4 after plated film; 9 carry out soaking and washing by the substrate 4 after groove, and the back electrode film that is sprayed with the position of remover on substrate 4 comes off in soaking and washing.Because the speed that the step of first having carried out the spray remover before the back electrode plated film is sprayed remover by shower nozzle is fast, and once can spray many remover straight lines according to the quantity of shower nozzle, while carrying out the back electrode plated film afterwards, spray and have the remover position also can plate the back electrode film.When carrying out the final step soaking and washing, because remover is that water-soluble material can be selected for example water-soluble poly phenyl amines material or solubility Nomex material, therefore in the soaking and washing process, the back electrode film at remover position is removal capable of washing, thereby omitted the step of TCO film or semiconductor film laser scoring with respect to the traditional BIPV thin-film solar cells manufacture method shown in accompanying drawing 1, because shower nozzle spraying remover can be according to the convenient live width of adjusting of the diameter of spray nozzle, therefore with respect to the relatively fixing back and forth groove that needs repeatedly of the live width of laser machine, the manufacture method of BIPV thin-film solar cells of the present invention can be enhanced productivity, reduce production costs, by spraying, cleaning can be removed the back electrode film fast, to reach transparent effect.
In above-mentioned steps 6, the remover straight line live width of spraying is 0.01-5mm.
In above-mentioned steps 6, spraying is during remover, and when remover spraying direction parallels with the direction of laser scoring on the TCO film, some remover lines of spraying are discontinuous, and every remover lines are comprised of the N section.When the direction of the laser scoring on remover spraying direction and TCO film is perpendicular, the remover lines are some continuous straight lines.
Because the thickness of back electrode film all is no more than 1um, the 1-100 that the thickness that can make the remover of spraying in reality spray remover is the back electrode film doubly, thereby make to be coated with the position of remover and adjacent regions form stepped, thereby can be convenient in the soaking and washing process remover be removed is clean.
As shown in Figure 3, the second manufacture method of this BIPV thin-film solar cells in turn includes the following steps:
1 is cleaned the TCO glass substrate; 2 are placed into the substrate 4 after cleaning on the laser board and carry out TCO film laser scoring; 3 clean the substrate 4 after groove again; 4 utilize compressed air to pass through some shower nozzles water miscible remover sprays some straight lines on substrate 4; 5 carry out semiconductor coated film by the substrate 4 after spraying; 6 are placed into the substrate 4 after plated film on the laser board and carry out the semiconductor film laser scoring; 7 carry out the back electrode plated film by the substrate 4 after groove; 8 carry out the back electrode laser scoring by the substrate 4 after plated film; 9 carry out soaking and washing by the substrate 4 after groove, and the semiconductor film and the back electrode film that are sprayed with the position of remover on substrate 4 come off in soaking and washing.Because the speed that the step of first having carried out the spray remover before semiconductor coated film is sprayed remover by shower nozzle is fast, and once can spray many remover straight lines according to the quantity of shower nozzle, carry out afterwards the step of semiconductor film laser scoring, back electrode plated film and back electrode laser scoring, spray and have the remover position also can plate semiconductor film and back electrode film.When carrying out the final step soaking and washing, because remover is that water-soluble material can be selected for example water-soluble poly phenyl amines material or solubility Nomex material, therefore in the soaking and washing process, semiconductor film and the back electrode film at remover position is removal capable of washing, thereby omitted the step of TCO film or semiconductor film laser scoring with respect to the traditional BIPV thin-film solar cells manufacture method shown in accompanying drawing 1, because shower nozzle spraying remover can be according to the convenient live width of adjusting of the diameter of spray nozzle, therefore with respect to the relatively fixing back and forth groove that needs repeatedly of the live width of laser machine, the manufacture method of BIPV thin-film solar cells of the present invention can be enhanced productivity, reduce production costs.Can remove fast the back electrode film by spraying, cleaning, to reach transparent effect.Can only remove the back electrode film with respect to the first BIPV thin-film solar cells manufacture method, this manufacture method is once cleaned and can be removed semiconductor film and back electrode film, has further improved the light transmittance of thin-film solar cells.
Above-mentioned remover is the high temperature resistant Nomex material of water-soluble poly phenyl amines material or solubility.
In above-mentioned steps 6, the remover straight line live width of spraying is 0.01-5mm.Can realize adapting to different live width standards by the injection diameter of changing shower nozzle, easy to adjust quick.
In step 6, spraying is during remover, and when remover spraying direction parallels with the direction of laser scoring on the TCO film, some remover lines of spraying are discontinuous, and every remover lines are comprised of the N section.When the direction of the laser scoring on remover spraying direction and TCO film is perpendicular, the remover lines are some continuous straight lines.Every Battery pack is respectively back electrode 1 from top to bottom, semiconductor film 2, TCO film 3, glass substrate 4, back electrode 1 and the semiconductor film 2 of each Battery pack are continuous, and understand perpendicular to the remover zone of TCO film laser scoring back electrode 1 and semiconductor film 2 that the remover place will be arranged after cleaning as shown in Figure 5, remove, and make every Battery pack be divided into some, if now be parallel to remover and be continuous spray, will cause baby battery after cutting apart and the contiguous battery can't conducting, baby battery electricity after making every component cut can only produce heat waste and fall, and can't normally be pooled to next battery, and the remover lines parallel it for interrupted spraying with the direction of laser scoring on the TCO film, will make continuous in back electrode 1 and semiconductor film 2 maintenances of the regional battery that there is no remover as shown in Figure 4, because can make every group of baby battery can go out the electrical transmission of sending, collect to greatest extent all electric currents, can the normal series connection of each battery not impacted, the utilance of solar cell is greatly improved.
Claims (8)
1. the manufacture method of a BIPV thin-film solar cells is characterized in that: in turn include the following steps:
A) the TCO glass substrate is cleaned;
B) substrate (4) after cleaning is placed on the laser board and carries out TCO film laser scoring;
C) substrate after groove (4) is cleaned again;
D) substrate (4) is carried out to semiconductor coated film;
E) substrate after plated film (4) is placed on the laser board and carries out the semiconductor film laser scoring;
F) water miscible remover is utilized compressed air pass through some shower nozzles and spray some straight lines on substrate;
G) substrate after groove is carried out to the back electrode plated film;
H) substrate after plated film is carried out to the back electrode laser scoring;
I) substrate after groove is carried out to soaking and washing, the back electrode film that is sprayed with the position of remover on substrate comes off in soaking and washing.
2. the manufacture method of BIPV thin-film solar cells according to claim 1, it is characterized in that: described remover is the high temperature resistant Nomex material of water-soluble poly phenyl amines material or solubility.
3. the manufacture method of BIPV thin-film solar cells according to claim 1 is characterized in that: described step f), the remover straight line live width of spraying is 0.01-5mm.
4. according to the manufacture method of claim 1 or 2 or 3 described BIPV thin-film solar cells, it is characterized in that: while described step f), spraying remover, when remover spraying direction parallels with the direction of laser scoring on the TCO film, some remover lines of spraying are discontinuous, every the remover lines are comprised of the N section, when the direction of the laser scoring on remover spraying direction and TCO film is perpendicular, the remover lines are some continuous straight lines.
5. the manufacture method of a BIPV thin-film solar cells is characterized in that: in turn include the following steps:
A) the TCO glass substrate is cleaned;
B) substrate (4) after cleaning is placed on the laser board and carries out TCO film laser scoring;
C) substrate after groove (4) is cleaned again;
D) water miscible remover is utilized compressed air pass through some shower nozzles at the some straight lines of the upper spraying of substrate (4);
E) substrate (4) after spraying is carried out to semiconductor coated film;
F) substrate after plated film (4) is placed on the laser board and carries out the semiconductor film laser scoring;
G) substrate after groove (4) is carried out to the back electrode plated film;
H) substrate after plated film (4) is carried out to the back electrode laser scoring;
I) substrate after groove (4) is carried out to soaking and washing, the semiconductor film and the back electrode film that are sprayed with the position of remover on substrate (4) come off in soaking and washing.
6. the manufacture method of BIPV thin-film solar cells according to claim 5, it is characterized in that: described remover is water-soluble poly phenyl amines material or solubility Nomex material.
7. the manufacture method of BIPV thin-film solar cells according to claim 5 is characterized in that: described step f), the remover straight line live width of spraying is 0.01-5mm.
8. according to the manufacture method of claim 5 or 6 or 7 described BIPV thin-film solar cells, it is characterized in that: while described step f), spraying remover, when remover spraying direction parallels with the direction of laser scoring on the TCO film, some remover lines of spraying are discontinuous, every the remover lines are comprised of the N section, when the direction of the laser scoring on remover spraying direction and TCO film is perpendicular, the remover lines are some continuous straight lines.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310480653.XA CN103489964A (en) | 2013-10-15 | 2013-10-15 | Manufacturing method of BIPV (Building Integrated Photovoltaics) thin-film solar cell |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310480653.XA CN103489964A (en) | 2013-10-15 | 2013-10-15 | Manufacturing method of BIPV (Building Integrated Photovoltaics) thin-film solar cell |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108493300A (en) * | 2018-04-19 | 2018-09-04 | 山东海慧新能源科技有限公司 | A kind of preparation method of light transmission BIPV curtain wall solar cells |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4689874A (en) * | 1985-05-16 | 1987-09-01 | Fuji Electric Company, Ltd. | Process for fabricating a thin-film solar battery |
| CN101425550A (en) * | 2007-10-22 | 2009-05-06 | 应用材料股份有限公司 | Process testers and testing methodology for thin-film photovoltaic devices |
| WO2010022214A1 (en) * | 2008-08-21 | 2010-02-25 | Applied Materials, Inc. | Selective etch of laser scribed solar cell substrate |
| CN101743643A (en) * | 2007-07-11 | 2010-06-16 | 比尔克勒激光技术股份有限公司 | Thin-film solar cell module and method for its |
| CN102544197A (en) * | 2010-10-12 | 2012-07-04 | 上方能源技术(杭州)有限公司 | Drawing method of thin film solar cell and thin film solar cell device |
-
2013
- 2013-10-15 CN CN201310480653.XA patent/CN103489964A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4689874A (en) * | 1985-05-16 | 1987-09-01 | Fuji Electric Company, Ltd. | Process for fabricating a thin-film solar battery |
| CN101743643A (en) * | 2007-07-11 | 2010-06-16 | 比尔克勒激光技术股份有限公司 | Thin-film solar cell module and method for its |
| CN101425550A (en) * | 2007-10-22 | 2009-05-06 | 应用材料股份有限公司 | Process testers and testing methodology for thin-film photovoltaic devices |
| WO2010022214A1 (en) * | 2008-08-21 | 2010-02-25 | Applied Materials, Inc. | Selective etch of laser scribed solar cell substrate |
| CN102544197A (en) * | 2010-10-12 | 2012-07-04 | 上方能源技术(杭州)有限公司 | Drawing method of thin film solar cell and thin film solar cell device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108493300A (en) * | 2018-04-19 | 2018-09-04 | 山东海慧新能源科技有限公司 | A kind of preparation method of light transmission BIPV curtain wall solar cells |
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Application publication date: 20140101 |