CN102543811A - Adhesive sheet for semiconductor device and manufacturing method thereof - Google Patents
Adhesive sheet for semiconductor device and manufacturing method thereof Download PDFInfo
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- CN102543811A CN102543811A CN2011102964474A CN201110296447A CN102543811A CN 102543811 A CN102543811 A CN 102543811A CN 2011102964474 A CN2011102964474 A CN 2011102964474A CN 201110296447 A CN201110296447 A CN 201110296447A CN 102543811 A CN102543811 A CN 102543811A
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- cutting part
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- adhesive sheet
- release element
- knitting layer
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/40—Adhesives in the form of films or foils characterised by release liners
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
- B32B37/15—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with at least one layer being manufactured and immediately laminated before reaching its stable state, e.g. in which a layer is extruded and laminated while in semi-molten state
- B32B37/156—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with at least one layer being manufactured and immediately laminated before reaching its stable state, e.g. in which a layer is extruded and laminated while in semi-molten state at least one layer is calendered and immediately laminated
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
- B32B37/16—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with all layers existing as coherent layers before laminating
- B32B37/18—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with all layers existing as coherent layers before laminating involving the assembly of discrete sheets or panels only
- B32B37/187—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with all layers existing as coherent layers before laminating involving the assembly of discrete sheets or panels only the layers being placed in a carrier before going through the lamination process
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/38—Pressure-sensitive adhesives [PSA]
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/40—Adhesives in the form of films or foils characterised by release liners
- C09J7/403—Adhesives in the form of films or foils characterised by release liners characterised by the structure of the release feature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/10—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet
- C09J2301/16—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the structure of the carrier layer
Landscapes
- Organic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Adhesive Tapes (AREA)
- Dicing (AREA)
- Adhesives Or Adhesive Processes (AREA)
Abstract
The present invention discloses an adhesive sheet for a semiconductor device and a manufacturing method thereof. In the adhesive sheet, a release component has a preset proportion between a uncut part thickness and a whole release component thickness, and a preset distance between the cut parts and a shearing strength of 40N/15mm and 90N/15mm.
Description
Technical field
The present invention relates to a kind of adhesive sheet and manufacturing approach thereof that is used for semiconductor device.More specifically; The present invention relates to a kind of adhesive sheet and manufacturing approach thereof that is used for semiconductor device; Wherein release element has not predetermined ratio, the preset distance between the cutting part and 40N/15mm or the bigger shear strength of cutting part thickness and release element gross thickness, thereby keeps scroll stability.
Background technology
Semiconductor crystal wafer is being cut in the technology of single chip, the chip cling film attaches to the back side of wafer.The chip cling film can have double-decker, wherein cuts the knitting layer that the combination of film and junction film attaches as wafer.
Known have having the method that this double-deck adhesive sheet is cut into the wafer shape that constitutes semiconductor device in advance.In advance cutting process is to cut junction film in advance corresponding to the wafer shape, and from junction film but not remove the technology of resin bed with the wafer bonding part.In preparatory cutting process, junction film is cut corresponding to the wafer shape in advance, and engaged with pressure sensitive adhesive films, carry out preparatory cutting process again.
Yet if blade penetrates in the adhesive sheet dearly in preparatory cutting process, the adhesive sector-meeting is used to keep scroll and the winding tension that applies damages.On the contrary, if apply weak winding tension to prevent this damage, adhesive sheet has the coiling performance of low volume, causes the problem of scroll stability.
In addition, in preparatory cutting process, although aspect the shape stability of adhesive sheet, the degree of depth of cutting part is most important, yet is difficult in manufacturing process, measure the degree of depth, and this degree of depth can be inconsistent according to the position because of the wearing and tearing edge of a knife of blade.
Summary of the invention
One aspect of the present invention provides a kind of adhesive sheet that is used for semiconductor device, and said adhesive sheet comprises release element, knitting layer, pressure sensitive adhesive layer and the basement membrane that stacks gradually.Said release element comprises first cutting part that the periphery from the horizontal side of said knitting layer along said knitting layer forms and second cutting part that forms along the periphery of said pressure sensitive adhesive layer and said basement membrane.Said first cutting part and the said second cutting part thickness separately can be less than the thickness of said release element, and said release element can have the shear strength in 40N/15mm to the 90N/15mm scope.
In one embodiment, remove the not cutting part thickness that said first cutting part or said second cutting part produce from said release element and can be 20% to 80% of said release component thickness.
In one embodiment, removing not cutting part thickness that said second cutting part produces from said release element can be greater than 1 with the ratio of removing the not cutting part thickness that said first cutting part produces from said release element.
In one embodiment, said not cutting part thickness can be 30% to 70% of said release element gross thickness, and said release element can have the shear strength of 40N/15mm to 90N/15mm.
In one embodiment, the distance between said first cutting part and said second cutting part can be 10mm to 30mm.
Another aspect of the present invention provides a kind of manufacturing approach that is used for the adhesive sheet of semiconductor device, and the said adhesive sheet that is used for semiconductor device comprises release element, knitting layer, pressure sensitive adhesive layer and the basement membrane that stacks gradually, and said method comprises:
On said release element, pile up said knitting layer;
The opposing face that contacts the face of said release element from said knitting layer places the first stocking cutter sheet said release element and said knitting layer is cut into first flat shape and forms first cutting part;
Removal has the said knitting layer outside first flat shape part;
On said knitting layer, pile up pressure-sensitive adhesive sheet, make said pressure sensitive adhesive layer and said basement membrane pile up, be in contact with one another simultaneously; And
The opposing face that contacts the face of said pressure sensitive adhesive layer from said basement membrane places the second stocking cutter sheet said release element and said pressure-sensitive adhesive sheet is cut into second flat shape and forms second cutting part;
Wherein said first cutting part and said second cutting part have than the little thickness of said release element separately, and said release component thickness is removed ratio that not cutting part thickness that the said second cutting part thickness obtains and said release component thickness remove the not cutting part thickness that the said first cutting part thickness obtains greater than 1.
Description of drawings
By detailed description below in conjunction with accompanying drawing, of the present invention above will become obviously with others, feature and advantage, wherein:
Fig. 1 shows the instance according to the adhesive sheet that is used for semiconductor device of one embodiment of the present invention; And
Fig. 2 shows the manufacturing approach instance according to the adhesive sheet that is used for semiconductor device of one embodiment of the present invention.
Embodiment
Each side of the present invention provides a kind of adhesive sheet that is used for semiconductor device, and said adhesive sheet comprises release element, knitting layer, pressure sensitive adhesive layer and the basement membrane that stacks gradually; Wherein said release element comprises first cutting part that the periphery from the horizontal side of said knitting layer along said knitting layer forms and second cutting part that forms along the periphery of said pressure sensitive adhesive layer and said basement membrane; The thickness separately of said first cutting part and said second cutting part can be less than the thickness of said release element, and said release element can have 40N/15mm or bigger shear strength.
At the above-mentioned adhesive sheet that is used for semiconductor device, release element, knitting layer, pressure sensitive adhesive layer and basement membrane stack gradually.Particularly, comprise that the joint fastener of release element and knitting layer is deposited on the pressure-sensitive adhesive sheet that comprises pressure sensitive adhesive layer and basement membrane, make knitting layer and pressure sensitive adhesive layer be in contact with one another, use adhesive sheet thereby constitute semiconductor device with stacked structure.
In the literary composition, " knitting layer can partly be stacked on the release element " is meant that knitting layer only is stacked on the part on the whole surface of release element.Release element not only comprises the part that contacts with knitting layer, also comprises first cutting part and second cutting part.
Knitting layer can partly be formed on the release element, thereby after peeling off release element, has the corresponding flat shape of the flat shape that engages target that will attach with knitting layer.Engaging target can for example be semiconductor crystal wafer.When knitting layer has the flat shape corresponding with the flat shape of semiconductor crystal wafer, can help the technology of cutting semiconductor wafer.
Knitting layer can have round-shaped.In the case, knitting layer can have the diameter of 220mm to 320mm, but is not limited thereto.
Pressure sensitive adhesive layer and basement membrane stack gradually on knitting layer and are arranged to fully cover knitting layer.Particularly, when knitting layer has when round-shaped, pressure sensitive adhesive layer and basement membrane can have diameter and be longer than the round-shaped of knitting layer diameter.For example, have round-shaped pressure sensitive adhesive layer and basement membrane and can have 1.10 to 1.30 times diameter, but be not limited thereto for the knitting layer diameter.
In the literary composition, " can partly form pressure sensitive adhesive layer and basement membrane with respect to release element " is meant that pressure sensitive adhesive layer and basement membrane only are formed on the part on the whole surface of release element.Release element comprises except that pressure sensitive adhesive layer and second cutting part the basement membrane.
Release element is formed with first cutting part.First cutting part is meant through the first stocking cutter sheet is placed the sheet that comprises release element and knitting layer and the part that on release element, forms.First cutting part has removes the thickness that the degree of depth that the first stocking cutter sheet forms obtains with the sheet thickness that comprises release element and knitting layer.This first cutting part is formed along knitting layer is peripheral by the horizontal side of knitting layer.The not cutting part thickness of removing the generation of first cutting part from release element can be 20% to 80% of release component thickness, preferred 20% to 70%.The first cutting part thickness can be less than the thickness of release element.
Release element also is formed with second cutting part.After second cutting part is meant and forms first cutting part, through the second stocking cutter sheet is placed the sheet that comprises release element, knitting layer, pressure sensitive adhesive layer and basement membrane and the part that on release element, forms.Second cutting part has the sheet thickness that release element, knitting layer, pressure sensitive adhesive layer and basement membrane are formed and removes the thickness that the degree of depth that the second stocking cutter sheet forms obtains.This second cutting part is with the for example preset distance formation of 10mm to 30mm of distance first cutting part.This second cutting part forms along the periphery of pressure sensitive adhesive layer and basement membrane.The not cutting part thickness of removing the generation of second cutting part from release element can be 20% to 80% of release component thickness, preferred 30% to 80%.The second cutting part thickness can be less than the thickness of release element.
Cutting part thickness can not use any method to measure.For example, use electron microscope measuring interval is that the thickness of 12 positions of 30 ° carries out the observation of cross section, and calculating mean value is a thickness.
Cutting part thickness not can be 20% to 80% of release component thickness.In this scope, when applying winding tension, adhesive sheet can not be damaged, and has the coiling performance of excellent volume, produces excellent scroll stability.In addition, when the adhesive sheet that is used for semiconductor crystal wafer formed pricker shape (pricker shape), remaining adhesive can be easy to remove.
Particularly, remove the not cutting part thickness that first produces from release element and can be 20% to 70% of release component thickness, and remove the not cutting part thickness that second cutting part produces from release element and can be 30% to 80% of release component thickness.
The not cutting part thickness of removing the generation of second cutting part from release element can be greater than 1 with the ratio of the not cutting part thickness of removing first's generation from release element.Particularly, this ratio can be 1.01 to 3.
In adhesive sheet, release element can have the shear strength in 40N/15mm to the 90N/15mm scope.Shear strength can be through carrying out extension test with the speed of 50mm/min to sample with Instron 3343.At this moment, sample has 15mm width and 50mm length, and by the release component fabrication of the position with first and second blades.
In preparatory cutting process, owing to use electron microscope, so be difficult to measure the degree of depth of cutting part.In addition, the degree of depth of cutting part can be inconsistent because of the degree of wear of stocking cutter sheet.In embodiments of the present invention, to be that 40N/15mm or higher comes definite for the shear strength of the release element that at first obtains through the adhesive sheet of judging by original manufactured of the scroll of adhesive sheet stability and damaged possibility (brakeage possibility).Judge based on this, can successfully make the adhesive sheet that is used for semiconductor device.
Distance between release element first cutting part and second cutting part can be 10mm to 30mm.In this scope, can prevent the curling phenomenon of adhesive sheet in cutting and the expansion technology of semiconductor crystal wafer, and can obtain the excellent properties in the pick-up process.
Above-mentioned adhesive sheet can form scroll.Can apply winding tension through the adhesive sheet of making to success and form scroll.
Fig. 1 shows the instance according to the adhesive sheet that is used for semiconductor device of embodiment of the present invention.Adhesive sheet comprises release element 1, knitting layer 2, pressure sensitive adhesive layer 3 and the basement membrane 4 that stacks gradually.
If the thickness of release element 1 is called D, the not cutting part thickness of removing first cutting part 7 or 8 generations of second cutting part from release element 1 is called L, and then L/D can be 0.2 to 0.8.Particularly, be called L1 if will remove the not cutting part thickness that first cutting part 7 produces from release element 1, removing the not cutting part thickness that second cutting part 8 produces from release element 1 is L2, and then L1/D can be 0.2 to 0.7, and L2/D can be 0.3 to 0.8.
For thickness L1 and L2, L2/L1 can be greater than 1.
Can be 10mm to 30mm apart from m between first cutting part 7 and second cutting part 8.
Below will specify each component according to the adhesive sheet of this execution mode.
When using semiconductor device to use adhesive sheet, release element is as carrier film.The instance of release element can include, but are not limited to polyolefin film, like polyethylene film, polypropylene screen, polymethylpentene (PMP) film and polyvinyl acetate (PVC) film; And polyester film, like PETG (PET) film.
Release element can have the thickness of optimum range, for example 30 μ m to 60 μ m.
Knitting layer can have adhesiveness to pressure sensitive adhesive layer.Yet the UV irradiation makes this adhesiveness reduce, thereby behind slice process, can peel off knitting layer from pressure sensitive adhesive films.
Knitting layer can form the membranaceous of thermoset composition, and the wafer rear after the polishing is had excellent adhesiveness.Knitting layer can comprise acrylic copolymer, thermosetting resin and the curing agent with film forming.
The instance of acrylic copolymer can be included as the acrylic rubber of the copolymer of acrylic acid ester or methacrylate and acrylonitrile.
The instance of thermosetting resin can comprise epoxy resin, acrylic resin, silicone resin, phenolic resins, thermoset polyimide resin, polyurethane resin, melmac, Lauxite etc.Particularly, can use epoxy resin, because it can provide the adhesive sheet with excellent thermal endurance, machinability and reliability.
Can have adhering any epoxy resin through curing and all can be used as above-mentioned epoxy resin.Yet,, can use bisphenol A epoxide resin, phenolic resin varnish or cresol-novolak varnish epoxy resin because epoxy resin need comprise at least two kinds of functional groups that are used for curing reaction.
Any curing agent that is usually used in making adhesive sheet all can be used as above-mentioned curing agent.Above-mentioned curing agent can include, but are not limited to novolac epoxy resin.Can comprise at least two phenolic hydroxyl groups in each molecule of the instance of novolac epoxy resin, and highly anti-electrolytic corrosion when moisture absorption.Particularly, above-mentioned novolac epoxy resin can comprise bisphenol-A, Bisphenol F and bisphenol S resin, novolac epoxy resin, bisphenol-A phenolic varnish gum, cresol-novolak varnish gum, xylenol resin and biphenyl resin.
Knitting layer can further comprise the curing accelerator of ability cured epoxy resin.The instance of curing accelerator can comprise imidazoles, amine, phosphine or boron curing accelerator.The instantiation of these curing accelerators is known to those skilled in the art.
In addition, knitting layer can comprise that silane coupler is to improve the adhesiveness to wafer.Above-mentioned silane coupler can use separately or use with at least two kinds mixture.Silane coupler can be, but is not limited to be selected from least a in the group of being made up of epoxy silane, hydrosulphonyl silane, amino silane, vinyl trichlorosilane, vinyltrimethoxy silane, 3-glycidyl ether oxygen base propyl trimethoxy silicane, 3-methacryloxypropyl trimethoxy silane, 2-amino-ethyl-3-aminopropyl methyl dimethoxysilane and 3-urea groups propyl-triethoxysilicane.
In addition, knitting layer can further comprise organic or inorganic filler.The instance of inorganic filler comprises the metallicity component; Like gold, silver, copper and mickel powder; And the nonmetal character component, like aluminium hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicates, magnesium silicate, calcium oxide, magnesia, aluminium oxide, aluminium nitride, silicon dioxide, boron nitride, titanium dioxide, glass, ferrite, pottery etc.The instance of organic filler comprises carbon, rubber-like filler, polymer class filler etc.
Knitting layer can have the thickness of optimum range, for example 20 μ m to 60 μ m.
Knitting layer can form through any coating process that even coating thickness can be provided.For example, can use direct rubbing method, perhaps can knitting layer be applied to mould release membrance, drying is transferred to release element through transfer printing process then.Although can use any coating process that even coating thickness can be provided, can use usually that rod is coated with, intaglio plate coating, comma coating (comma coating), reverse roll coating, spreader coating, spraying and dip-coating.
Pressure sensitive adhesive layer can have adhesiveness to knitting layer.In the case, when the cutting semiconductor wafer, fixedly semiconductor crystal wafer helps cutting.
Pressure sensitive adhesive layer can have adhesiveness to knitting layer.Yet the UV irradiation makes this adhesiveness reduce, thereby behind slice process, can peel off knitting layer from pressure sensitive adhesive layer.
Pressure sensitive adhesive layer can comprise photocurable and adhesive acrylic acid cement, light trigger and thermal curing agents.
Adhesive acrylic acid cement can prepare through making as adhering acrylic monomers of demonstrating of principal monomer and the polymerization in the presence of polymerization initiator of functional acrylic monomers.Particularly, acrylic monomers, functional acrylic monomers and polymerization initiator are aggregated into adhesive acrylic polyol cement.
Acrylic monomers is used to provide and has adhering pressure sensitive adhesive layer.Acrylic monomers can include, but are not limited to C4 to C20 acrylic acid ester or methacrylate.For example, acrylic monomers can be and is selected from least a in the group of being made up of acrylic acid-2-ethyl caproite, methacrylic acid-2-Octyl Nitrite, Isooctyl acrylate monomer, ethyl acrylate, n-butyl acrylate, isobutyl acrylate and methacrylic acid octadecane ester.
Above-mentioned functions property acrylic monomers can be and is selected from by the acrylic monomers with hydroxyl, has the acrylic monomers of epoxy radicals and have at least a in the group that the reactive monomer of hydroxyl forms.Particularly, can use acrylic monomers with hydroxyl and mixture with acrylic monomers of epoxy radicals.
Have the hydroxy acrylic acid monomer and can include, but are not limited to C4 to C20 acrylic acid ester, methacrylate or other compounds of hydroxyl.For example, the acrylic monomers that has a hydroxyl can be and is selected from least a in the group of being made up of hydroxy methyl methacrylate, 2-hydroxyethyl methacry-late, acrylic acid-2-hydroxyl ethyl ester, acrylic acid-4-hydroxy butyl ester and hydroxy propyl methacrylate.
Acrylic monomers with epoxy radicals can include, but are not limited to contain C4 to C20 acrylic acid ester, methacrylate or other compounds of epoxy radicals.For example, can use acrylic acid glycidol ether-ether or methyl propenoic acid glycidyl ether-ether.
Reactive monomer with hydroxyl can comprise the monomer of C20 or more carbon atoms, and these monomers can use separately or use with their mixture.For example, can use lauryl acrylate, lauryl methacrylate, methacrylic acid stearoyl ester, acrylic acid hexadecane ester, acrylic acid octadecane ester or methacrylic acid octadecane ester.
The instance of polymerization initiator can comprise azo two compounds (azobis compounds), for example azodiisobutyronitrile, and radical initiator, as comprise the organic peroxide of benzoyl peroxide, but be not limited thereto.At this moment, can further use catalyst and polymerization inhibitor.
Above-mentioned polymerization can be carried out under 80 ℃ to 120 ℃ 1 to 70 hour, and preferred 5 to 15 hours, but be not limited thereto.
For light trigger, can use any known light trigger.The instance of light trigger can comprise the Benzophenone class, like Benzophenone, 4, and 4 '-dimethylamino Benzophenone, 4,4 '-lignocaine Benzophenone and 4,4 '-dichloro-benzenes ketone; Acetophenones is like acetophenone and diethoxy acetophenone; And the anthraquinone class, like 2-EAQ and tert-butyl group anthraquinone, they can use separately or use with at least two kinds mixture.
For thermal curing agents, can use the isocyanates thermal curing agents.The isocyanates thermal curing agents can be and is selected from by 2; 4-trichloroethylene vulcabond, 2; 6-trichloroethylene vulcabond, hydrogenation trichloroethylene vulcabond, 1,3-XDI, 1,4-XDI, diphenyl methane-4; 4-vulcabond, 1; 3-two isocyanato-hexahydrotoluenes (1,3-bisisocyanatomethyl cyclohexane), tetramethylxylene diisocyanate, 1,5-naphthalene diisocyanate, 2; 2; 4-trimethyl hexamethylene diisocyanate, 2,4, at least a in the group that the adduct of adduct, XDI and the trimethylolpropane of 4-trimethyl hexamethylene diisocyanate, trichloroethylene vulcabond and trimethylolpropane, triphenylmethane triisocyanate and di-2-ethylhexylphosphine oxide triisocyanate (methylenebistriisocyanate) are formed.
Pressure sensitive adhesive layer can use any coating process to form, for example with the identical method of method that is used for coating knitting layer on release element.
Pressure sensitive adhesive layer can have the thickness in the optimum range, for example 10 μ m to 20 μ m.
Basement membrane can include, but are not limited to polyolefin film usually, like polyethylene, polypropylene, ethylene/propene copolymer, gather 1-butylene, ethylene, polyethylene/SBR styrene butadiene rubbers blend, polychloroethylene film etc.In addition, basement membrane can comprise polymer, like PETG, Merlon with gather (methyl methacrylate); And thermoplastic elastomer (TPE), like polyurethane and polyamide-polyol copolymer; And their mixture.
Basement membrane can have the thickness in the optimum range, for example 10 μ m to 20 μ m.
The method that each side of the present invention provides a kind of preparation to be used for the adhesive sheet of semiconductor device, this adhesive sheet that is used for semiconductor device comprises release element, knitting layer, pressure sensitive adhesive layer and the basement membrane that stacks gradually.
Said method is included on the release element piles up knitting layer; The opposing face of the face through contacting release element from knitting layer places the first stocking cutter sheet release element and knitting layer is cut into first flat shape and forms first cutting part; Remove the knitting layer that does not comprise first flat shape; On knitting layer, pile up the sheet that comprises pressure-sensitive adhesive sheet and basement membrane, make pressure sensitive adhesive layer contact with knitting layer; And be cut into second flat shape through the sheet that the opposing face from the face of basement membrane contact pressure sensitive adhesive layer places release element with the second stocking cutter sheet and will comprise pressure-sensitive adhesive sheet and basement membrane and form second cutting part.
First cutting part and the second cutting part thickness can be respectively less than the thickness of release element.
The not cutting part thickness of removing said second cutting part generation from release element can be greater than 1 with the ratio of the not cutting part thickness of removing the generation of first cutting part from release element.
Release element, knitting layer, pressure sensitive adhesive layer and basement membrane are as stated.
Fig. 2 shows the preparation method's instance according to the adhesive sheet that is used for semiconductor device of one embodiment of the present invention.
On release element 1, pile up knitting layer 2.
Remove the knitting layer that does not comprise first flat shape.Peel off initial removal part through part, remove the product of being stripped from part respectively with take up roll then and realize this removal.
The sheet that will comprise pressure-sensitive adhesive sheet 3 and basement membrane 4 is deposited on the knitting layer 2, makes pressure sensitive adhesive layer 3 contact with knitting layer 2.
The opposing face that contacts the face of pressure sensitive adhesive layers 3 from basement membrane 4 places release element 1 to be cut into second flat shape with the sheet that will comprise pressure-sensitive adhesive sheet 3 and basement membrane 4 the second stocking cutter sheet 6, thereby forms second cutting part 8.Usually can use at least two second stocking cutter sheets to form second cutting part.When using two second stocking cutter sheets, regulate distance between the blade based on second flat shape.Second flat shape can have the spherical form that abundant covering is used for the annular frame of processing semiconductor wafer.The not cutting part thickness of removing the generation of second cutting part from release element can be 20% to 80% of release component thickness, preferred 30% to 80%.
At this moment, regulate the second cutting part thickness, the feasible not cutting part thickness of removing said second cutting part generation from release element can be greater than 1 with the ratio of the not cutting part thickness of removing the generation of first cutting part from release element.
Distance between first cutting part and second cutting part can be 10mm to 30mm.
To understand the present invention better by following examples and Comparative Examples.Providing these embodiment only to be used for explanation, is not to limit scope of the present invention, and scope of the present invention is limited appended claims.
To omit explanation at this to the tangible details of those skilled in the art.
Preparation example 1: the preparation of joint fastener
With 69 parts by weight of acrylic rubber cement SG-P3 (17%; Nagase Chemtex), 13 parts by weight of epoxy resin EPPN-501H (81%; Nippon Kayaku), the phenols curing agent HF-IM (50% of 7 weight portions; Meiwa), the silane coupler KBM-403 (100% of 1 weight portion; Shinetsu), (100%, Hokko) the filler R-972 (Degussa) with 9.5 weight portions mixes with the methyl ethyl ketone of 30 weight portions the curing accelerator TPP-K of 0.5 weight portion, thereby makes the knitting layer composition.(TS-002, Toyobo Co. Ltd.), and are dried to 20 μ m thickness with the intaglio plate coating this knitting layer composition to be applied to the thick thin PET basement membrane of 50 μ m.With products obtained therefrom and PET protection basement membrane (TS-002, Toyobo Co., Ltd.) range upon range of, thus make joint fastener.
Preparation example 2: the preparation of pressure-sensitive adhesive sheet
The acrylic acid cement SR-09184R (43.5% that contains vinyl with 51 weight portions; Samhwa Paint Industrial Co.; Ltd.), isocyanates thermal curing agents AK-75 (the Aekyung Chemical Co. of light trigger Darocur 1173 of 0.5 weight portion (Ciba Chemical) and 1.5 weight portions; Ltd.) be dispersed in the methyl ethyl ketone of 47 weight portions, thereby make the binding compsns that is used for pressure sensitive adhesive layer.With this binding compsns be applied to thin PET basement membrane (TS-002, Toyobo Co., Ltd.) thick and dry to 10 μ m.The polypropylene basement membrane (JSR) that products obtained therefrom and 100 μ m are thick is range upon range of, thereby makes pressure-sensitive adhesive sheet.
Removal PET protection basement membrane from embodiment 1 joint fastener is made (TS-002, Toyobo Co., Ltd.).Then; 235mm is cut into this joint fastener round-shaped in advance with the first stocking cutter sheet
; This is the first preparatory cutting process; Thereby form first cutting part, make that the degree of depth of removing the not cutting part that first cutting part produces from mould release membrance is the degree of depth of listing the table 1.Knitting layer is pasted to take up roll and removes have round-shaped part.Remove the PET film from the pressure-sensitive adhesive sheet that embodiment 2 makes, and pressure-sensitive adhesive sheet is deposited on the joint fastener.Then; 270mm cuts this pressure-sensitive adhesive sheet in advance with the second stocking cutter sheet
; This is the second preparatory cutting process; Thereby form second cutting part, make that the degree of depth of removing the not cutting part that second cutting part produces from mould release membrance is the degree of depth of listing the table 1.Therefore, make the adhesive sheet that is used for semiconductor device.The adhesive sheet that successfully will be used for semiconductor device is processed scroll.In this scroll, regulate winding tension, thereby keep shape stability.
Comparative Examples 1 and 2: be used for the preparation of the adhesive sheet of semiconductor device
Being used for the pressure-sensitive adhesive sheet of semiconductor device with embodiment 1 to 3 identical method manufacturing, difference is like the thickness of the release element of listing in the table 1 of change and the release element degree of depth of cutting part not.
Test: the performance evaluation that is used for the adhesive sheet of semiconductor device
Estimate the performance of the adhesive sheet of making in embodiment and the Comparative Examples that is used for semiconductor device, and the result is shown in Table 1.
< evaluation method >
(1) the release element degree of depth of cutting part not
Obtain going out the degree of depth of not cutting part of first cutting part and second cutting part through the thickness average value of asking 12 points that are spaced apart 30 ° with the electron microscope observation cross section from release element.
(2) shear strength of release element
Preparation comprises the release element sample of 15mm * 50mm that has the not cutting part of same depth with each release element that is used for the adhesive sheet of semiconductor device; And with the speed of 50mm/min sample is carried out extension test, thereby measure shear strength (N/15mm) with Instron 3343.
(3) scroll of adhesive sheet stability
After 300 segments coilings with each adhesive sheet, judge the distortion of scroll sheet through tightening nuclear.Stable scroll is expressed as O, and slight unsettled scroll is expressed as Δ, and the scroll of unstable inclination is expressed as X.
(4) breakage of adhesive sheet
When like the listed change winding tension of table 1, the sheet breakage is expressed as O, and the not damaged X that is expressed as of sheet.
(5) bad peeling off (faulty peeling)
After the first preparatory cutting process, the removal of the knitting layer except that having round-shaped part, the knitting layer that for example has a round-shaped part is partly removed and is expressed as O, and has only unnecessary knitting layer to remove to be expressed as X.
Table 1
(1) degree of depth of the first stocking cutter sheet in the sheet of release element and knitting layer
(2) remove the not cutting part thickness (L1, μ m) of first cutting part and the ratio (%) of cutting part and release element not from release element
(3) degree of depth of the second stocking cutter sheet (μ m) in the sheet of release element, knitting layer, pressure sensitive adhesive layer and basement membrane
(4) remove the not cutting part thickness (L2, μ m) of second cutting part and the ratio (%) of cutting part and release element not from release element
In embodiment 1 to 3, when shear strength is 40N/25mm or when bigger, scroll stability is maintained, and the sheet breakage can not occur in the scroll.Yet, in Comparative Examples 1,, the sheet breakage occurs, thereby cause technology to stop or producing defective when shear strength during less than 40N/25mm.In addition, in Comparative Examples 2, because depth of cut is shallow, do not have round-shaped part when cutting knitting layer for not containing, this adhesive can not suitably cut, and makes that having round-shaped part also can be stripped from.
Although Wen Zhongyi discloses some execution modes, only being understood that provides these execution modes with the mode of explaining, and can carry out various modifications, change and replacement, and does not deviate from the spirit and scope of the present invention.Therefore, scope of the present invention is only limited appended claims and equivalent thereof.
Claims (12)
1. an adhesive sheet that is used for semiconductor device comprises the release element, knitting layer, pressure sensitive adhesive layer and the basement membrane that stack gradually,
Wherein said release element comprises first cutting part that the periphery from the horizontal side of said knitting layer along said knitting layer forms and second cutting part that forms along the periphery of said pressure sensitive adhesive layer and said basement membrane,
The thickness separately of said first cutting part and said second cutting part is less than the thickness of said release element,
Said release element has the shear strength in 40N/15mm to the 90N/15mm scope.
2. it is 20% to 80% of said release component thickness that adhesive sheet according to claim 1, wherein said release component thickness are removed the not cutting part thickness that the said first cutting part thickness or the said second cutting part thickness obtains.
3. adhesive sheet according to claim 1, wherein said release component thickness are removed ratio that not cutting part thickness that the said second cutting part thickness obtains and said release component thickness remove the not cutting part thickness that the said first cutting part thickness obtains greater than 1.
4. adhesive sheet according to claim 1, wherein cutting part thickness is not 30% to 70% of said release component thickness, and said release element has the shear strength of 40N/15mm to 90N/15mm.
5. adhesive sheet according to claim 1; It is 20% to 70% of said release component thickness that wherein said release component thickness is removed the not cutting part thickness that the said first cutting part thickness obtains, and said release component thickness to remove the not cutting part thickness that the said second cutting part thickness obtains be 30% to 80% of said release component thickness.
6. adhesive sheet according to claim 3, wherein said ratio is in 1.01 to 3 scope.
7. adhesive sheet according to claim 1, the distance between wherein said first cutting part and said second cutting part is 10mm to 30mm.
8. it is the round-shaped of 220mm to 320mm that adhesive sheet according to claim 1, wherein said knitting layer have diameter, and said pressure sensitive adhesive layer and said basement membrane to have diameter be 1.10 times to 1.30 times of said knitting layer diameter round-shaped.
9. adhesive sheet according to claim 1, the wherein said adhesive sheet that is used for semiconductor device has scroll.
10. manufacturing approach that is used for the adhesive sheet of semiconductor device, the said adhesive sheet that is used for semiconductor device comprises release element, knitting layer, pressure sensitive adhesive layer and the basement membrane that stacks gradually, said method comprises:
On said release element, pile up said knitting layer;
The opposing face that contacts the face of said release element from said knitting layer places the first stocking cutter sheet said release element and said knitting layer is cut into first flat shape and forms first cutting part;
Removal has the said knitting layer outside first flat shape part;
On said knitting layer, pile up pressure-sensitive adhesive sheet, make said pressure sensitive adhesive layer and said basement membrane pile up, be in contact with one another simultaneously; And
The opposing face that contacts the face of said pressure sensitive adhesive layer from said basement membrane places the second stocking cutter sheet said release element and said pressure-sensitive adhesive sheet is cut into second flat shape and forms second cutting part;
Wherein said first cutting part and said second cutting part have than the little thickness of said release element separately, and said release component thickness is removed ratio that not cutting part thickness that the said second cutting part thickness obtains and said release component thickness remove the not cutting part thickness that the said first cutting part thickness obtains greater than 1.
11. method according to claim 10; It is 20% to 80% of said release component thickness that wherein said release component thickness is removed the not cutting part thickness that the said first cutting part thickness or the said second cutting part thickness obtains, and the distance between said first cutting part and said second cutting part is 10mm to 30mm.
12. method according to claim 10; It is 20% to 70% of said release component thickness that wherein said release component thickness is removed the not cutting part thickness that the said first cutting part thickness obtains, and said release component thickness to remove the not cutting part thickness that the said second cutting part thickness obtains be 30% to 80% of said release component thickness.
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| CN1497703A (en) * | 2002-10-15 | 2004-05-19 | 日东电工株式会社 | Cutting/die-connecting film, method of fixing chip parts and semiconductor equipment |
| CN101040023A (en) * | 2004-10-14 | 2007-09-19 | 日立化成工业株式会社 | Adhesive sheet and method for manufacturing the same, semiconductor device manufacturing method and semiconductor device |
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| JP2000221888A (en) | 1999-01-29 | 2000-08-11 | Nitto Denko Corp | Adhesive label sheet for semiconductor wafer |
| KR101129762B1 (en) | 2006-06-23 | 2012-03-26 | 히다치 가세고교 가부시끼가이샤 | Production method of semiconductor device |
| JP2010260897A (en) | 2009-04-30 | 2010-11-18 | Furukawa Electric Co Ltd:The | Adhesive film and tape for processing wafer |
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| CN1497703A (en) * | 2002-10-15 | 2004-05-19 | 日东电工株式会社 | Cutting/die-connecting film, method of fixing chip parts and semiconductor equipment |
| CN101040023A (en) * | 2004-10-14 | 2007-09-19 | 日立化成工业株式会社 | Adhesive sheet and method for manufacturing the same, semiconductor device manufacturing method and semiconductor device |
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| KR20120065893A (en) | 2012-06-21 |
| TWI441252B (en) | 2014-06-11 |
| TW201225168A (en) | 2012-06-16 |
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