KR101351615B1 - Adhesive sheet for semiconductor device and a method for preparing the same - Google Patents

Abstract

According to the present invention, the thickness of the uncut portion and the distance between the uncut portions of the peeling substrate are set at a specific ratio, and the breaking strength per unit area is 40N / 15mm or more and 90N / 15mm or less, thereby preventing film breakage and maintaining roll shape stability. The present invention provides an adhesive adhesive sheet for semiconductors and a method of manufacturing the same.

Description

Adhesive sheet for semiconductor and its manufacturing method {Adhesive sheet for semiconductor device and a method for preparing the same}

The present invention relates to an adhesive adhesive sheet for semiconductors and a method of manufacturing the same. More specifically, the present invention specifies the ratio of the thickness of the uncut portion and the distance between the cut portions of the total thickness of the peeling substrate, and the film breakage is suppressed and roll shape by making the breaking strength of the peeling substrate to be 40N / 15mm or more It is to provide an adhesive adhesive sheet for semiconductors and a method of manufacturing the same that can maintain stability.

In the process of dicing the semiconductor wafer into individual chips, a die adhesive film for fixing the wafer is attached to the back side of the wafer. The die adhesive film may have a two-layer structure in which an adhesive film and a dicing film are laminated as an adhesive layer to which a wafer is attached.

A method of precutting such a two-layer adhesive sheet into a wafer shape constituting a semiconductor element is known. This pre-cut processing method is a method of removing the resin layer other than the part which affixes a wafer by cutting an adhesive film previously according to the shape of the wafer to be used. In the case of precut processing, the adhesive film is precut to conform to the wafer shape, and the adhesive film is bonded to the adhesive film, and the adhesive film is then precut.

However, when the precut knife is set deep in the precut processing, the adhesive sheet may break when the winding tension is applied to maintain the roll shape. In addition, if the winding tension is weakened to improve this, the roll winding property of the adhesive sheet may cause problems in roll shape stability.

In addition, the depth of the cut portion in the pre-cut processing is important for the shape stability of the adhesive sheet, but it is not easy to measure at the time of manufacture and may be uneven by position due to wear of the precut blade.

SUMMARY OF THE INVENTION An object of the present invention is to provide an adhesive adhesive sheet for semiconductors having a roll shape with no film breakage and excellent roll shape stability.

The adhesive sheet for semiconductors of the present invention is a semiconductor adhesive sheet in which a release substrate, an adhesive layer, an adhesive layer, and a base film are sequentially stacked.

The peeling substrate has a first cut portion is formed along the periphery of the adhesive layer from the side of the adhesive layer, and a second cut portion is formed along the periphery of the adhesive layer and the base film,

The thickness of the first cut portion and the thickness of the second cut portion is less than the thickness of the peeling substrate,

The breaking strength of the release substrate may be 40N / 15mm or more and 90N / 15mm or less.

In one embodiment, the thickness of the uncut portion remaining after subtracting the thickness of the first cut portion or the second cut portion from the total thickness of the peeling substrate may be 20-80% of the total thickness of the peeling substrate. .

In one embodiment, the uncut portion that is the remainder minus the thickness of the second cut portion of the total thickness of the peeling substrate relative to the thickness of the uncut portion that is the remainder minus the thickness of the first cut portion from the total thickness of the peeling substrate. The ratio of the thickness of can be greater than one.

In one embodiment, the thickness of the uncut portion is 30-70% of the total thickness of the release substrate and the breaking strength of the release substrate may be 40 to 90N / 15mm.

In one embodiment, the distance between the first cut site and the second cut site may be 10-30 mm.

The adhesive bonding sheet for semiconductors of the present invention can suppress film breakage during manufacture in a roll form and maintain shape stability in a roll form.

Figure 1 shows one specific example of the adhesive sheet for semiconductor of the present invention.
Figure 2 shows one specific example of the manufacturing method of the adhesive sheet for semiconductor of the present invention.

In the adhesive bonding sheet for semiconductor of the present invention, a peeling base material, an adhesive layer, an adhesive layer, and a base film are sequentially stacked, and the peeling base material is formed with a first cut portion along the circumference of the adhesive layer from the side of the adhesive layer, and the adhesive layer and the base material. A second cut portion is formed along the circumference of the film, the thickness of the first cut portion and the thickness of the second cut portion are less than the total thickness of the peeling substrate, and the breaking strength of the peeling substrate is 40 N / 15 mm or more. Can be.

In the adhesive bonding sheet for semiconductors, the release base material, the adhesive layer, the adhesive layer, and the base film are sequentially laminated. Preferably, the laminated structure of the adhesive sheet for semiconductors of the present invention can be devised by laminating the adhesive sheet and the adhesive layer in contact with each other in the adhesive sheet on which the release base material and the adhesive layer are stacked, and the adhesive layer and the base film. have.

The adhesive layer may be partially formed on the surface of the release substrate. "The adhesive layer is partially formed on the surface of the release base material" means that the adhesive layer is formed only on a part of the entire surface of the release base material. The peeling base material is formed with the first cut portion and the second cut portion as well as the portion where the adhesive layer is in contact.

The adhesive layer may be partially formed on the surface of the release substrate so as to have a planar shape that matches the plane shape of the adherend to which the adhesive layer should be attached after peeling off the release substrate. An adherend is a semiconductor wafer, for example. When the adhesive layer has a planar shape that matches the planar shape of the semiconductor wafer, the process of dicing the semiconductor wafer can be facilitated.

The adhesive layer may preferably have a circular shape. In the case of a circular shape, the diameter of the adhesive layer may be 220 to 320 mm, but is not limited thereto.

The adhesive layer and the base film are sequentially stacked on the adhesive layer, but have a shape capable of sufficiently covering the adhesive layer. Preferably, when the adhesive layer has a circular shape, the adhesive layer and the base film may have a circular shape having a diameter larger than that of the adhesive layer. For example, in the case of a circular shape, the diameter of the adhesive layer and the base film may be 1.10 to 1.30 times the diameter of the adhesive layer, but is not limited thereto.

The adhesive layer and the base film may be partially formed on the release substrate. "The adhesive layer and the base film are partially formed with respect to the release base material" means that the adhesive layer and the base film are formed only at one part with respect to the entire surface of the release base material. A peeling base material is provided with the 2nd cut part other than an adhesion layer and a base film.

The 1st cutting part is formed in the peeling base material. The first cut portion refers to a portion formed on the peeling substrate when the first precut blade is cut in a sheet formed of the peeling substrate and the adhesive layer. The first cutting portion may be calculated by subtracting the first cutting knife depth from the entire thickness of the sheet including the peeling base and the adhesive layer. The first cut portion is formed along the circumference of the adhesive layer from the side of the adhesive layer. The remaining thickness of the total thickness of the peeling substrate minus the thickness of the first cut portion, that is, the thickness of the uncut portion may be 20-80%, preferably 20-70% of the total thickness of the peeling substrate. The thickness of the first cut portion may be less than the overall thickness of the release substrate.

The 2nd cutting part is formed in the peeling base material. The second cut portion refers to a portion formed on the peeling substrate when the second precut blade is cut in the sheet formed of the peeling substrate, the adhesive layer, the adhesive layer, and the base film. The second cut portion may be calculated as a value obtained by subtracting the second cutting knife depth from the entire thickness of the sheet including the peeling base, the adhesive layer, the adhesive layer, and the base film. The second cut portion is formed at a predetermined distance, for example, 10-30 mm away from the first cut portion, and is formed along the circumference of the adhesive layer and the base film. The remaining thickness of the total thickness of the peeling substrate minus the thickness of the second cut portion, that is, the thickness of the uncut portion may be 20-80%, preferably 30-80% of the total thickness of the peeling substrate. The thickness of the second cut portion may be less than the overall thickness of the release substrate.

The method of measuring the thickness of the uncut part except the 1st cut part or the 2nd cut part of the total thickness of a peeling base material is not specifically limited. For example, by observing the cross section by an electron microscope, 12 points can be measured at a 30 degree interval, and can be measured by an average value.

The thickness of the uncut portion remaining after subtracting the thickness of the first cut portion or the second cut portion among the total thickness of the peeling substrate may be 20-80% of the total thickness of the peeling substrate. Within the above range, when the winding tension is applied, the adhesive sheet is not broken, and the roll winding property of the adhesive sheet is good, and roll shape stability is good. In addition, it is easy to remove unnecessary adhesives during the manufacturing process of the fricker form of the adhesive sheet for semiconductor wafer processing.

Preferably, the thickness of the uncut portion excluding the thickness of the first cut portion of the total thickness of the peeling substrate is 20-70% of the thickness of the peeling substrate, and the thickness of the uncut portion excluding the second cut portion of the peeling substrate is peeled off. It can be 30-80% of the thickness of the substrate.

The ratio of the thickness of the uncut portion excluding the second cut portion of the total thickness of the release base material to the thickness of the uncut portion excluding the first cut portion of the total thickness of the peeling substrate may be greater than one. Preferably it may be 1.01 to 3.

The breaking strength of the release base material in the adhesive sheet may be 40 N / 15 mm or more and 90 N / 15 mm or less, preferably 40-90 N / 15 mm. Break strength was measured by the tensile test at a rate of 50mm / min using a universal testing machine Intron 3343 after preparing a 15mm width, 50mm length samples of the base film at the position where the blade is cut.

In the pre-cut process, the depth of the cut part should be measured using an electron microscope, so it may not be easy to measure and may be uneven by position due to wear of the pre-cut blade. In the adhesive sheet of the present invention, the first step of determining the roll shape stability and film breakage of the manufactured adhesive sheet by measuring the breaking strength of the peeling substrate in the initially produced products and confirming that the value is more than 40N / 15mm can do. From this, it is possible to enable continuous production of the adhesive adhesive sheet for semiconductors.

The distance between the first cut portion and the second cut portion formed on the release substrate may be 10-30 mm. Within this range, it is required to be manufactured to exhibit good characteristics of the curling and pick-up processability of the adhesive during the sawing and expansion process, which is a semiconductor wafer processing process.

The adhesive sheet may be in the form of a roll. It can be manufactured in the form of a roll by applying a winding tension to the continuously prepared adhesive sheet.

Figure 1 shows one specific example of the adhesive sheet for semiconductor of the present invention. The adhesive sheet has a structure in which a release base material 1, an adhesive layer 2, an adhesive layer 3, and a base film 4 are sequentially stacked.

With respect to the thickness L of the uncut portion except the first cut portion 7 or the second cut portion 8 of the thickness D of the peeling substrate 1, the L / D may be 0.2-0.8. . Preferably, the thickness L1 of the uncut portion excluding the first cut portion 7 of the peeling substrate and the thickness L2 of the uncut portion excluding the second cut portion 8 of the peeling substrate, L1 / D May be 0.2-0.7 and L2 / D may be 0.3-0.8.

Regarding the thickness L1 of the uncut portion excluding the first cut portion 7 of the peeling substrate 1 and the thickness L2 of the uncut portion excluding the second cut portion 8 of the peeling substrate 1, L2 / L1 may be greater than one.

The distance m between the first cut portion 7 and the second cut portion 8 may be 10-30 mm.

Hereinafter, each component which comprises the adhesive bonding sheet of this invention is explained in full detail.

The release substrate acts as a carrier film when using the adhesive bonding sheet for semiconductors. As the release base material, for example, polyolefin-based films such as polyethylene film, polypropylene film, polymethylpentene film, polyvinylacetate film, polyester-based films such as polyethylene terephthalate film and the like can be used, but these are not limited thereto. no.

The thickness of the release base material can be selected in an appropriate range, for example, may be 30-60㎛.

It is preferable that the adhesive force with respect to an adhesion layer falls by an adhesive layer by ultraviolet irradiation. In this case, the adhesive layer may be peeled off from the adhesive layer after the dicing step.

The adhesive layer is made into a film with a thermosetting composition and should have good adhesion to the grounded back side of the wafer. The adhesive layer may include an acrylic copolymer having a film-forming ability on a solid content basis, a thermosetting resin, and a curing agent.

Examples of the acrylic copolymer include acrylic rubber which is a copolymer such as acrylic acid ester, methacrylic acid ester and acrylonitrile.

Examples of the thermosetting resin include epoxy resins, acrylic resins, silicone resins, phenol resins, thermosetting polyimide resins, polyurethane resins, melamine resins, and urea resins. In particular, it is preferable to use an epoxy resin to obtain an adhesive sheet having excellent heat resistance, workability, and reliability.

The epoxy resin is not particularly limited as long as it has an adhesive strength by curing, but since it needs to have two or more functional groups in order to perform a curing reaction, a bisphenol A type epoxy resin, a phenol novolak type epoxy resin and a cresol novolak type epoxy resin can be used have.

The curing agent may be used a curing agent commonly used in the manufacture of the adhesive layer. Although there is no restriction | limiting in particular as a hardening | curing agent, A phenol type epoxy occasional hardening | curing agent can be used. For example, as a compound having two or more phenolic hydroxyl groups in one molecule, bisphenol A, bisphenol F, bisphenol S-based curing agent resins and phenol novolac resins, bisphenol A-based novolac resins or cresols having excellent electrolytic corrosion resistance at the time of moisture absorption Phenol resins, such as a novolak, a xyloxic system, and a biphenyl system, are preferable.

In addition, the adhesive layer may further include a curing accelerator for curing the epoxy resin. For example, imidazole series, amine series, phosphine series or boron curing accelerator can be used. The specific types thereof are known to those skilled in the art.

In addition, in order to increase the adhesive force with a wafer, an adhesive layer can use 1 type, or 2 or more types of silane coupling agents. The silane coupling agent is not particularly limited, but epoxy silane, mercapto silane, amino silane, vinyltrichloro silane, vinyltrimethoxy silane, 3-glycidoxypropyltrimethoxy silane, 3-methacryloxypropyltrimethoxy One or more types selected from the group consisting of silane, 2-aminoethyl-3-aminopropylmethyldimethoxysilane and 3-ureidopropyltriethoxysilane can be used.

In addition, the adhesive layer may use an inorganic or organic filler as needed. As inorganic fillers, gold, silver, copper and nickel powders can be used as the metal component, and alumina, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide as the nonmetallic component , Aluminum nitride, silica, boron nitride, titanium dioxide, glass, iron oxide, ceramics and the like can be used. As the organic filler, carbon, rubber filler, polymer or the like can be used.

The thickness of the adhesive layer can be selected in an appropriate range, for example, may be 20-60㎛.

The coating method of the adhesive layer is not particularly limited as long as it can form a uniform coating film thickness. For example, it may be directly coated or may be transferred by a transfer method after completion of drying after coating the adhesive layer on a release film or the like. In all cases, the coating method for forming the adhesive layer is not limited as long as it can form a uniform coating layer, but mainly bar coating, gravure coating, comma coating, reverse roll coating, applicator coating, spray coating, lip coating, etc. The method of is used.

It is preferable that an adhesion layer has adhesiveness with respect to an adhesive layer. In this case, when the semiconductor wafer is diced, the semiconductor wafer is fixed and dicing can be facilitated.

It is preferable that the adhesive force with respect to an adhesive layer falls by an adhesion layer by ultraviolet irradiation. In this case, the adhesive layer may be peeled off from the adhesive layer after the dicing step.

The adhesive layer may include a photocurable acrylic adhesive binder, a photoinitiator, and a thermosetting agent on a solid content basis.

The acrylic adhesive binder can be produced by using an acrylic monomer capable of imparting adhesion as a main monomer, and adding a functional acrylic monomer and a polymerization initiator thereto to carry out a polymerization reaction. Preferably, the acrylic monomer, the functional acrylic monomer and the polymerization initiator are polymerized to prepare an acrylic polyol adhesive binder resin.

The acrylic monomer functions to give adhesive force to the film. There is no particular limitation on the acrylic monomer, and it may include acrylic acid ester or methacrylic acid ester having 4 to 20 carbon atoms. For example, a group selected from the group consisting of 2-ethylhexyl acrylate, 2-ethylhexyl methacrylate, isooctyl acrylate, ethyl acrylate, n-butyl acrylate, isobutyl acrylate and octadecyl methacrylate One or more species can be used.

The functional acrylic monomer may be at least one selected from the group consisting of a hydroxy monomer, an epoxy group monomer and a reactive monomer. Preferably, a combination of a hydroxy monomer and an epoxy group monomer may be used.

The hydroxy monomer is not particularly limited, and it may include 4 to 20 carbon atoms including acrylic ester or methacrylic acid ester or other compound containing a hydroxy group. For example, from the group consisting of hydroxymethyl methacrylate, 2-hydroxyethyl methacrylate, 2-hydroxyethyl acrylate, 4-hydroxybutyl acrylate, hydroxypropyl methacrylate and vinyl caprolactam At least one selected may be used.

The epoxy group monomer is not particularly limited and may include an acrylic acid ester or a methacrylic acid ester or other compound including an epoxy group and having 4 to 20 carbon atoms. For example, glycidyl acrylate or glycidyl methacrylate can be used.

The reactive monomer may be a monomer having a carbon number of 20 or more or a mixture thereof. For example, lauryl acrylate, lauryl methacrylate, stearyl methacrylate, cetyl acrylate, octadecyl acrylate, octadecyl methacrylate and the like are preferable.

As the polymerization initiator, a radical generator such as an azobis system such as azobisisobutyronitrile or an organic peroxide system such as benzoyl peroxide can be used, but the present invention is not limited thereto. At this time, a catalyst and a polymerization inhibitor may be used in combination if necessary.

The polymerization reaction can be carried out at a polymerization temperature of 80-120 占 폚 and a polymerization time of 1-70 hours, preferably 5-15 hours, but is not limited thereto.

There is no restriction | limiting in particular in the photoinitiator, Conventionally known thing can be used. Specifically, benzophenones such as benzophenone, 4,4'-dimethylaminobenzophenone, 4,4'-diethylaminobenzophenone, 4,4'-dichlorobenzophenone, acetophenone, diethoxyacetophenone and the like These may be used alone or in combination of two or more thereof, such as anthraquinones such as acetophenones, 2-ethyl anthraquinone and t-butyl anthraquinone.

Although there is no restriction | limiting in particular in a thermosetting agent, An isocyanate type thermosetting agent can be used. Isocyanate-based thermosetting agents include 2,4-trilene diisocyanate, 2,6-triylene diisocyanate, hydrogenated triylene diisocyanate, 1,3-xylene diisocyanate, 1,4-xylene diisocyanate, diphenyl methane- 4,4-diisocyanate, 1,3-bisisocyanatomethyl cyclohexane, tetramethylxylene diisocyanate, 1,5-naphthalene diisocyanate, 2,2,4-trimethylhexamethylene diisocyanate, 2,4,4 At least one selected from the group consisting of trimethylhexamethylene diisocyanate, triylene diisocyanate adduct of trimethylolpropane, xylene diisocyanate adduct of trimethylolpropane, toriphenylmethane toisocyanate, methylene bistriisocyanate, etc. have.

There is no particular limitation on the coating method of the adhesive layer, and the same method as the method of coating the adhesive layer on the release substrate may be used.

The thickness of the pressure-sensitive adhesive layer can be selected from an appropriate range, for example, may be 10-20㎛.

The substrate film is not particularly limited. For example, polyolefin-based films such as polyethylene, polypropylene, ethylene / propylene copolymer, polybutene-1, ethylene / vinyl acetate copolymer, mixture of polyethylene / styrene butadiene rubber and polyvinyl chloride can be mainly used. Further, polymers such as polyethylene terephthalate, polycarbonate and poly (methyl methacrylate), thermoplastic elastomers such as polyurethane and polyamide-polyol copolymer, and mixtures thereof can be used.

The thickness of the base film may be selected from an appropriate range, for example, may be 10-20㎛.

The present invention provides a method for manufacturing a adhesive sheet for semiconductors in which a release substrate, an adhesive layer, an adhesive layer, and a base film are sequentially laminated. The method

Stacking an adhesive layer on the release substrate;

Cutting the adhesive layer into a first planar shape by forming a first cut portion by inserting a first precut knife from the side opposite to the surface where the adhesive layer is in contact with the release substrate until reaching the release substrate;

Removing a portion of the adhesive layer minus the first planar shape;

Stacking an adhesive sheet having the adhesive layer and the base film laminated on the adhesive layer such that the adhesive layer and the adhesive layer are in contact with each other;

Cutting the pressure-sensitive adhesive sheet into a second planar shape by forming a second precut knife from the side opposite to the surface where the base film is in contact with the pressure-sensitive adhesive layer until reaching the release base material, and forming a second cut portion. and,

The thickness of the first cut portion and the thickness of the second cut portion is less than the total thickness of the peeling substrate,

The ratio of the thickness of the uncut portion which is the remainder minus the thickness of the second cut portion of the total thickness of the peeling substrate to the thickness of the uncut portion minus the thickness of the first cut portion of the total thickness of the release substrate is greater than one. Can be

The content of the release base material, the adhesive layer, the adhesive layer, and the base film is as described above.

Figure 2 shows one specific example of the manufacturing method of the adhesive sheet for semiconductor of the present invention.

An adhesive sheet is prepared by laminating the adhesive layer 2 on the release substrate 1.

Insert the first precut knife 5 from the side opposite to the surface where the adhesive layer 2 is in contact with the release substrate 1 until it reaches the release substrate 1 to bring the adhesive layer 2 into the first planar shape. Cut and form a first cut site 7. Generally two or more first precut knives are used to form the first cleavage site. When using two first precut knives, the distance between them is adjusted according to the first planar shape. Preferably, the first planar shape has a planar shape that conforms to the planar shape of the adherend to which the adhesive layer 2 is to be attached after the peeling base material 1 is peeled off. An adherend is a semiconductor wafer, for example. The thickness of the uncut portion excluding the first cut portion of the peeling substrate may be 20-80% of the thickness of the peeling substrate, preferably 20-70%.

The part which removed the 1st planar shape of the adhesive layer 2 is removed. In the removal method, only the part of the part to be peeled off after the part to be removed initially is removed using a winding roll.

The adhesive sheet in which the adhesive layer 3 and the base film 4 are laminated on the adhesive layer 2 is laminated so that the adhesive layer 2 and the adhesive layer 3 are in contact with each other.

The adhesive sheet is cut into a second planar shape by inserting the second precut knife 6 from the side opposite to the surface where the base film 4 is in contact with the adhesive layer 3 until it reaches the release substrate 1. The second cut portion 8 is formed. Generally two or more second precut knives are used to form the second cleavage site. When using two second precut knives, the distance between them is adjusted according to the second planar shape. Preferably, the second planar shape has a spherical shape that can sufficiently cover the ring frame for semiconductor wafer processing. The thickness of the uncut portion except the second cut portion of the peeling substrate may be 20-80%, preferably 30-80% of the thickness of the peeling substrate.

At this time, the ratio of the thickness of the uncut portion excluding the second cut portion of the thickness of the peeled substrate to the thickness of the uncut portion excluding the first cut portion among the thicknesses of the peeled substrate is set to be less than 1. Adjust.

The distance between the first cut portion and the second cut portion is adjusted to be 10-30 mm.

Hereinafter, the configuration and operation of the present invention through the preferred embodiment of the present invention will be described in more detail. It is to be understood, however, that the same is by way of illustration and example only and is not to be construed in a limiting sense.

Details that are not described herein will be omitted since those skilled in the art can sufficiently infer technically.

Manufacturing example  1: Preparation of Adhesive Sheet

69 parts by weight of acrylic rubber binder SG-P3 (Nagase chemtex, 17%), 13 parts by weight of epoxy resin EPPN-501H (Nippon Kayaku 81%), 7 parts by weight of phenolic curing agent HF-IM (Meiwa 50%), silane coupling agent Adhesive layer composition by adding 1 part by weight of KBM-403 (Shinetsu, 100%), 0.5 part by weight of curing accelerator TPP-K (100%), and 9.5 parts by weight of filler R-972 (Degussa) to 30 parts by weight of methylethylketone. Was prepared. The adhesive layer composition was applied to a peeling base PET film (TS-002, Toyobo Co., Ltd.) having a thickness of 50 μm by gravure coating and dried to a thickness of 20 μm. A protective sheet PET film (Toyobo, TS-002) was laminated to prepare an adhesive sheet.

Manufacturing example  2: Preparation of Adhesive Sheet

51 parts by weight of acryl-based binder SR-09184R (three times paint, 43.5%) containing a vinyl group, 0.5 parts by weight of photoinitiator Darocur 1173 (Ciba-chemical), 1.5 parts by weight of heat curing agent isocyanate-based heat curing agent AK-75 (Aekyung Chemical) solvent methyl Dispersed in 47 parts by weight of ethyl ketone to prepare an adhesive composition for forming an adhesive layer. The adhesive composition was applied to a release base material PET film (Toyobo, TS-002) to a thickness of 10㎛ and dried. An adhesive sheet was prepared by laminating a base film polypropylene film (JSR) having a thickness of 100 μm.

Example  1-3: Semiconductor Of adhesive sheet  Produce

The protective base PET film Toyobo TS-002 was removed from the adhesive sheet prepared in Preparation Example 1. The first cut portion was then precut into a circular shape with a first precut knife φ235 mm (primary precut) to remove the first cut portion of the peeling substrate so that the depth of the uncut portion was the depth shown in Table 1 below. Was formed. The portion of the adhesive layer other than the circular shape was removed by attaching to another winding roll. The PET film was removed from the adhesive sheet prepared in Preparation Example 2 and laminated. Then, the second cut portion was formed by precut processing with the second precut knife φ270 mm (secondary precut processing) so that the depth of the uncut portion obtained by subtracting the second cut portion of the peeling substrate is the depth shown in Table 1 below. The adhesive adhesive sheet for semiconductors was manufactured. The adhesive bonding sheet for semiconductors was produced continuously, and manufactured in roll type. At this time, by controlling the winding tension in the roll type to maintain the stability of the roll type.

Comparative Example  1-2: for semiconductor Of adhesive sheet  Produce

Except that the thickness of the peeling substrate and the depth of the uncut portion of the peeling substrate in Example 1-3 was changed as shown in Table 1 below, the same method as in Example 1-3 was carried out for the point adhesive for the semiconductor Sheets were prepared.

Experimental Example : For semiconductor Of adhesive sheet  Property measurement

The physical properties of the roll-type adhesive sheets for semiconductors prepared in Examples and Comparative Examples were measured and the results are shown in Table 1 below.

≪ Method for measuring physical properties &

1. Depth measurement of the uncut portion of the peeling substrate: The depth of the uncut portion except for the first cut portion and the second cut portion of the peeling substrate was measured by measuring 12 points at 30 ° intervals by cross-sectional observation by an electron microscope. Measured by.

2. Measurement of Breaking Strength of Peeling Substrate: Tensile test was performed at 50min / min using a universal testing machine, Instron 3343, after preparing 15mm x 50mm of peeling substrate sample having the uncut portion of the same depth as the peeling substrate of semiconductor adhesive sheet. The breaking strength was measured through.

3. Determination of Roll Form Stability of Adhesive Sheets: After winding 300 cut sheets of adhesive sheets, pull the center core to determine the degree of deformation of the roll-type film state ○ (when the roll shape is stable), △ (when the roll shape is slightly unstable), It judged by x (when roll form is unstable and a tendency to generate | occur | produce) (require confirmation).

4. Whether the adhesive adhesive sheet was broken: When the winding tension was changed as described in Table 1 below, it was judged as ○ (when the film was broken) and × (when the film was not broken).

5. Peeling failure phenomenon: When removing the adhesive layer other than the circular shape after the 1st precut, it was judged as (circle-shaped adhesive layer removed), x (when only the unnecessary adhesive part is removed).

TABLE 1

In the case of the above embodiment, when having a breaking strength of 40N / 25mm or more in the roll form, maintaining the roll shape stability and the film was not broken. On the other hand, in the case of Comparative Example 1 when the breaking strength is less than 40N / 25mm there is a phenomenon that the breakage of the film occurs to stop the work or a failure occurs. Moreover, in the case of the comparative example 2, since the cutting depth is small, when removing the adhesive layer parts other than a circular shape, it may not cut correctly but may peel to circular shape.

Claims (12)

An adhesive sheet for semiconductors in which a peeling base material, an adhesive layer, an adhesive layer, and a base film are sequentially stacked,
The peeling substrate has a first cut portion is formed along the periphery of the adhesive layer from the side of the adhesive layer, and a second cut portion is formed along the periphery of the adhesive layer and the base film,
The thickness of the first cut portion and the thickness of the second cut portion is less than the total thickness of the peeling substrate,
The adhesive bonding sheet for semiconductors whose breaking strength of the said peeling base material is 40N / 15mm or more and 90N / 15mm or less.
According to claim 1, wherein the thickness of the uncut portion remaining after subtracting the thickness of the first cut portion or the second cut portion from the total thickness of the peeling substrate is 20 to 80% of the total thickness of the peeling substrate. Adhesive adhesive sheet for semiconductors.
According to claim 1, wherein the total thickness of the peeling substrate minus the thickness of the second cut portion from the total thickness of the peeling substrate relative to the thickness (L1) of the uncut portion that is the remainder minus the thickness of the first cut portion. The adhesive agent adhesive sheet for semiconductors characterized by the ratio of the thickness L2 of the cut | disconnected site | part being more than one.
According to claim 1, wherein the thickness of the uncut portion, which is the total thickness of the peeling substrate minus the thickness of the first cut portion or the second cut portion is 30-70% of the total thickness of the peeling substrate and the peeling substrate The breaking strength of the adhesive sheet for semiconductors, characterized in that 40 ~ 90N / 15mm.
According to claim 1, wherein the thickness of the non-cutting portion remaining after subtracting the thickness of the first cut portion from the total thickness of the peeling substrate is 20-70% of the total thickness of the peeling substrate, the second in the total thickness of the peeling substrate The thickness of the uncut portion minus the thickness of the cut portion is 30-80% of the total thickness of the release base material, the adhesive sheet for semiconductors.
4. The adhesive sheet for semiconductors according to claim 3, wherein the ratio of the thickness is 1.01 to 3. The adhesive sheet for semiconductors according to claim 1, wherein a distance between the first cut portion and the second cut portion is 10 to 30 mm.
According to claim 1, wherein the adhesive layer is a circular shape having a diameter of 220 ~ 320mm and the adhesive layer and the base film is a circular adhesive sheet having a circular shape having a diameter of 1.10 to 1.30 times the diameter of the adhesive layer. .
The adhesive sheet for semiconductor according to claim 1, wherein the adhesive sheet for semiconductor is in the form of a roll.
As a manufacturing method of the adhesive sheet for semiconductors in which a peeling base material, an adhesive layer, an adhesion layer, and a base film were laminated sequentially,
Stacking an adhesive layer on the release substrate;
Cutting the adhesive layer into a first planar shape by forming a first cut portion by inserting a first precut knife from the side opposite to the surface where the adhesive layer is in contact with the release substrate until reaching the release substrate;
Removing a portion of the adhesive layer minus the first planar shape;
Stacking an adhesive sheet having the adhesive layer and the base film laminated on the adhesive layer such that the adhesive layer and the adhesive layer are in contact with each other;
Cutting the pressure-sensitive adhesive sheet into a second planar shape by forming a second precut knife from the side opposite to the surface where the base film is in contact with the pressure-sensitive adhesive layer until reaching the release base material, and forming a second cut portion. and,
The thickness of the first cut portion and the thickness of the second cut portion is less than the total thickness of the peeling substrate,
The ratio of the thickness of the uncut portion minus the thickness of the second cut portion from the total thickness of the peeled substrate to the thickness of the uncut portion, which is the remainder minus the thickness of the first cut portion, is greater than 1 Manufacturing method.
11. The method of claim 10, wherein the thickness of the non-cutting portion that is the total thickness of the peeling substrate minus the thickness of the first cut portion or the second cut portion is 20-80% of the total thickness of the peeling substrate,
The distance between the first cut portion and the second cut portion is a manufacturing method of the adhesive sheet for a semiconductor, characterized in that 10 ~ 30mm.
11. The method of claim 10, wherein the thickness of the uncut portion minus the thickness of the first cut portion from the total thickness of the peeling substrate is 20-70% of the total thickness of the peeling substrate, the second cut portion in the total thickness of the peeling substrate The thickness of the uncut part except the thickness of the manufacturing method of the adhesive bonding sheet for semiconductors characterized by the above-mentioned.

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