CN102517629A - Method for quickly and accurately finding monocrystal seeding crucible position - Google Patents
Method for quickly and accurately finding monocrystal seeding crucible position Download PDFInfo
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- CN102517629A CN102517629A CN2011104201862A CN201110420186A CN102517629A CN 102517629 A CN102517629 A CN 102517629A CN 2011104201862 A CN2011104201862 A CN 2011104201862A CN 201110420186 A CN201110420186 A CN 201110420186A CN 102517629 A CN102517629 A CN 102517629A
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Abstract
The invention discloses a method for quickly and accurately finding a monocrystal seeding crucible position. The method comprises the following steps of: after loading, closing a furnace cover and a furnace body, covering a turn-plate valve cover, and opening a sub chamber furnace door at the same time; lowering a seed crystal or a thin neck to just touch a central screw at the top of a turn-plate valve, at the time, clearing the position of a crystal on a control panel, and setting the zero position A; after clearing the position of the crystal, raising the seed crystal into the sub chamber furnace door, pumping out air to check leakage, and raising the temperature for three times to dissolve materials; after the materials are dissolved, timely opening a crucible stirrer, raising the crucible position, lowering power, and 1 hour to 2 hours before seeding, slowly lowering the seed crystal for multiple times; 30 to 40 minutes before seeding and detecting the temperature, lowering the seed crystal again to the crystal position B when multiple furnaces are pulled over a whole rod; and after the crystal position is fixed, slowly raising the crucible position until the liquid level just touches the seed crystal or the bottom of the thin neck, at the time, fixing the crucible position, wherein the raising position of the crucible position is C, inserting the seed crystal or the thin neck into liquid, and seeding and detecting the temperature. The inaccuracy of the distance from the liquid level to the bottom of a flow guiding cylinder, which is measured by a naked eye, is avoided, and the indeterminacy of directly watching a crucible position dividing rule to determine a silicon material in each furnace is also avoided. The method has the characteristic of accurate and stable position finding, and simpliness and convenience in operation.
Description
Technical field
The present invention relates to a kind of method of quick and precisely seeking monocrystalline seeding crucible position.
Background technology
Seeding is a most important step in the crystal-pulling technological process, and its purpose is in order to get rid of crystal dislocation; Before seeding, need the temperature of silicon liquid level is regulated and control, also promptly look for temperature
Degree, the height of seeding crucible position has the very big imagination to the seeding temperature, and crucible position low temperature more is high more, and crucible position high-temperature more is low more.
B section seeding: monocrystalline crest line in process of growth comes off, and crystal just is converted into polycrystalline by monocrystalline, like length greater than 400mm (different processes is different with the crystal bar dimensional requirement),
Just this section received false tail this moment and then break away from liquid level, after stove internal cooling for some time, take out as the A section; Remaining silicon liquid in the crucible is carried out seeding again, draw the B section, the seeding of this moment becomes B section seeding; In same table, the seeding temperature when B section seeding temperature will be higher than the A section.
Seed crystal: seed crystal is exactly " seed " in the crystal-pulling, just the grow monocrystalline of what type of the seed crystal of what model, and seed crystal is to install in the weight dop; In the seeding process,
Exactly seed crystal is inserted silicon liquid level, after seed crystal welding then is intact, draws earlier about one section 30 mm and grow thick neck (diameter 12-17mm), then draw again about one section 120 mm and grow thin neck (diameter 4-6mm).
Thin neck: the crystal (diameter 4-6mm) of length about that section 120 mm that seeding is drawn.Drawn at crystal bar, when taking out crystal bar, used plyers and cut off thin neck, crystal bar is taken off
From weight.
In vertical pulling method (CZ method) crystal-pulling process, seeding is important in its a pulling process technological process; And in the seeding process, seeding crucible position (being bushing position) has direct influence to the temperature control of seeding process.In general, 22 English inch thermal fields draw 8 English inch crystal bars, liquid level apart from the distance of guide shell between 15-25mm; Crucible is biased low, and seeding is difficulty comparatively, and the crystal surviving rate is low; The biased height of crucible, the crystal surviving rate is high, but in isometrical process, is prone to the liquid level shake takes place, and causes the crystal rib that breaks.
Seeding is when adjustment crucible position; Common have a dual mode: the one, and to watch the distance of silicon liquid level inverted image and guide shell through naked eyes attentively and come rise and fall crucible position, this mode is simple to operate clear, also is the most frequently used method; But accuracy is not high, needs the operative employee that deeper drawing experience is arranged; The 2nd, check that every stove is pulled through crucible position when putting in order rod, the crucible position when reaching whole rod through regulating crucible position graduated scale; This kind mode is operated also comparatively simple, and also relatively accurately, but the weight that feeds intake that needs to guarantee every stove is with to put forward shoulder weight consistent, and the interior weight of B section seeding or stove changes with regard to this mode of incompatibility in this way.
Summary of the invention
Its purpose of the present invention just is to provide a kind of method of quick and precisely seeking monocrystalline seeding crucible position, has avoided naked eyes to watch the inaccuracy of liquid level apart from the guide shell distance from bottom attentively, has also avoided directly seeing the uncertainty of crucible position graduated scale because of silicon material in every heat stove.Have the advantages that to look for the position accurate, stable, and simple, convenient.
The technical scheme that realizes above-mentioned purpose and take, this method comprises
(1) charging is accomplished, and the bell body of heater that closes covers flap valve, opens the concubine fire door simultaneously;
(2) seed crystal or thin neck are fallen, just touched the center bolt at flap valve top until seed crystal or thin neck, be made as zero position A to the crystal position zero clearing on the control panel this moment;
(3) after the zero clearing of crystal position, seed crystal is risen in the concubine stove, the leak detection of then finding time, three intensifications add the thermalization material;
(4) change material and finish, in time open crucible and change, rising crucible position, decline power, preceding 1-2 hour of seeding slowly descends seed crystal several times;
(5) seeding was looked for before the temperature 30-40 minute, seed crystal was descended once more the crystal position B when dropping to many stoves and be pulled through whole rod;
(6) with the crystal stationkeeping good after, slowly risen in the crucible position, rise to liquid level always and just touch seed crystal or thin neck bottom, it is fixing intact to be about to the crucible position this moment, raise-position is C on the crucible position, then can seed crystal or thin neck be inserted liquid level, carries out seeding and looks for temperature.
Compared with prior art, beneficial effect of the present invention is, present method with single crystal growing furnace flap valve top as a zero-reference position; The wireline that descends of the relative value through the crystal position then; When arriving the fixed value of whole excellent crystal position, crystalline substance fallen stop the crucible position of then rising; Make liquid level and thin neck (or seed crystal) touching, be best seeding crucible position this moment.Avoided naked eyes to watch the inaccuracy of liquid level attentively, also avoided directly seeing the uncertainty of crucible position graduated scale because of silicon material in every heat stove apart from the guide shell distance from bottom.Have the advantages that to look for the position accurate, stable, and simple, convenient.
Description of drawings
Below in conjunction with accompanying drawing the present invention is made further detailed description.
Fig. 1 is position, the seeding crucible position A synoptic diagram of present method.
Fig. 2 is position, the seeding crucible position B synoptic diagram of present method.
Fig. 3 is position, the seeding crucible position C synoptic diagram of present method.
Embodiment
Shown in accompanying drawing, the concrete steps of present method comprise
(1) charging is accomplished, and the bell body of heater that closes covers flap valve, opens the concubine fire door simultaneously;
(2) seed crystal or thin neck are fallen, just touched the center bolt at flap valve top until seed crystal or thin neck, be made as zero position A to the crystal position zero clearing on the control panel this moment;
(3) after the zero clearing of crystal position, seed crystal is risen in the concubine stove, the leak detection of then finding time, three intensifications add the thermalization material;
(4) change material and finish, in time open crucible and change, rising crucible position, decline power, preceding 1-2 hour of seeding slowly descends seed crystal several times;
(5) seeding was looked for before the temperature 30-40 minute, seed crystal was descended once more the crystal position B when dropping to many stoves and be pulled through whole rod;
(6) with the crystal stationkeeping good after, slowly risen in the crucible position, rise to liquid level always and just touch seed crystal or thin neck bottom, it is fixing intact to be about to the crucible position this moment, raise-position is C on the crucible position, then can seed crystal or thin neck be inserted liquid level, carries out seeding and looks for temperature.
Embodiment
The present invention with single crystal growing furnace flap valve top as a zero-reference position; The wireline that descends of the relative value through the crystal position then; When arriving the fixed value of whole excellent crystal position, crystalline substance fallen stop the crucible position of then rising; Make liquid level and thin neck (or seed crystal) touching, be best seeding crucible position this moment.
1, charging is accomplished, and the bell body of heater that closes when preparing to find time to hunt leak, covers flap valve, opens the concubine fire door simultaneously;
2, two eye fixation seed crystals or thin neck are fallen it, have just touched the center bolt at flap valve top until seed crystal or thin neck, and be made as zero position A to the crystal position zero clearing on the control panel this moment, sees Fig. 1;
3, after the zero clearing of crystal position, seed crystal risen in the concubine stove (can open the flap valve safe altitude), the leak detection of then finding time, heating up for three times adds the thermalization material;
4, after changing the material end, in time open crucible and change rising crucible position, decline power; Before the seeding 1-2 hour (being stabilization process),, seed crystal is slowly descended several times, its seed crystal is copied temperature course through by " crystalline substance the falls soon " button on the manual operator;
5, seeding was looked for temperature preceding 30-40 minute; Seed crystal is descended once more; And watch " crystal position " numerical value on the control panel attentively; Best crystal position B when dropping to many stoves and be pulled through whole rod is like Fig. 2 (the best crystal position of every table can be summed up through the many heats of same this kind experiment method and drawn);
6, with the crystal stationkeeping good after, press " crucible the rises soon " button on the manual operator again, slowly risen in the crucible position, rise to liquid level always and just touch seed crystal or thin neck bottom, it is fixing intact to be about to the crucible position this moment, raise-position is C on the crucible position; Then can seed crystal or thin neck be inserted liquid level, carry out seeding and look for temperature, like Fig. 3.
Present method is how many kilograms of charging in the quartz crucible no matter, and its liquid level should be consistent apart from the distance of guide shell, and distance is consistent also to corresponding liquid level apart from the flap valve top.So the numerical value that is somebody's turn to do " crystal position " is exactly a definite value at every stove, and does not possess in this also present method therefor.
Claims (1)
1. a method of quick and precisely seeking monocrystalline seeding crucible position is characterized in that, comprises
1) charging is accomplished, and the bell body of heater that closes covers flap valve, opens the concubine fire door simultaneously;
2) seed crystal or thin neck are fallen, just touched the center bolt at flap valve top until seed crystal or thin neck, be made as zero position A to the crystal position zero clearing on the control panel this moment;
3) after the zero clearing of crystal position, seed crystal is risen in the concubine stove, the leak detection of then finding time, three intensifications add the thermalization material;
4) change material and finish, in time open crucible and change, rising crucible position, decline power, preceding 1-2 hour of seeding slowly descends seed crystal several times;
5) seeding was looked for before the temperature 30-40 minute, seed crystal was descended once more the crystal position B when dropping to many stoves and be pulled through whole rod;
6) with the crystal stationkeeping good after, slowly risen in the crucible position, rise to liquid level always and just touch seed crystal or thin neck bottom, it is fixing intact to be about to the crucible position this moment, raise-position is C on the crucible position, then can seed crystal or thin neck be inserted liquid level, carries out seeding and looks for temperature.
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| CN2011104201862A CN102517629A (en) | 2011-12-15 | 2011-12-15 | Method for quickly and accurately finding monocrystal seeding crucible position |
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| CN2011104201862A CN102517629A (en) | 2011-12-15 | 2011-12-15 | Method for quickly and accurately finding monocrystal seeding crucible position |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104947180A (en) * | 2015-07-06 | 2015-09-30 | 麦斯克电子材料有限公司 | Method for determining crystal leading crucible position of single crystal furnace |
| CN106435714A (en) * | 2015-08-07 | 2017-02-22 | 特变电工新疆新能源股份有限公司 | Polycrystalline silicon solution liquid level distance positioning method |
| CN107743531A (en) * | 2015-09-07 | 2018-02-27 | 韩国生产技术研究院 | The island position detecting device and method of melting furnace |
| CN115341279A (en) * | 2022-08-23 | 2022-11-15 | 包头晶澳太阳能科技有限公司 | Single crystal broken edge line processing method and single crystal bar |
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| JPS59227797A (en) * | 1983-06-03 | 1984-12-21 | Sumitomo Electric Ind Ltd | Method for pulling up single crystal |
| JP3444178B2 (en) * | 1998-02-13 | 2003-09-08 | 信越半導体株式会社 | Single crystal manufacturing method |
| JP2005097050A (en) * | 2003-09-25 | 2005-04-14 | Shin Etsu Handotai Co Ltd | Apparatus and method for manufacturing single crystal |
| CN101798704A (en) * | 2009-12-31 | 2010-08-11 | 峨嵋半导体材料研究所 | Process for growing phi 8'' solar-grade Czochralski silicon by using 18-inch thermal field |
| CN102134739A (en) * | 2011-03-08 | 2011-07-27 | 宁夏日晶新能源装备股份有限公司 | Automatic crystal guide system of single crystal furnace, and automatic crystal guide method |
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2011
- 2011-12-15 CN CN2011104201862A patent/CN102517629A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59227797A (en) * | 1983-06-03 | 1984-12-21 | Sumitomo Electric Ind Ltd | Method for pulling up single crystal |
| JP3444178B2 (en) * | 1998-02-13 | 2003-09-08 | 信越半導体株式会社 | Single crystal manufacturing method |
| JP2005097050A (en) * | 2003-09-25 | 2005-04-14 | Shin Etsu Handotai Co Ltd | Apparatus and method for manufacturing single crystal |
| JP4360163B2 (en) * | 2003-09-25 | 2009-11-11 | 信越半導体株式会社 | Single crystal manufacturing apparatus and single crystal manufacturing method |
| CN101798704A (en) * | 2009-12-31 | 2010-08-11 | 峨嵋半导体材料研究所 | Process for growing phi 8'' solar-grade Czochralski silicon by using 18-inch thermal field |
| CN102134739A (en) * | 2011-03-08 | 2011-07-27 | 宁夏日晶新能源装备股份有限公司 | Automatic crystal guide system of single crystal furnace, and automatic crystal guide method |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104947180A (en) * | 2015-07-06 | 2015-09-30 | 麦斯克电子材料有限公司 | Method for determining crystal leading crucible position of single crystal furnace |
| CN106435714A (en) * | 2015-08-07 | 2017-02-22 | 特变电工新疆新能源股份有限公司 | Polycrystalline silicon solution liquid level distance positioning method |
| CN107743531A (en) * | 2015-09-07 | 2018-02-27 | 韩国生产技术研究院 | The island position detecting device and method of melting furnace |
| CN115341279A (en) * | 2022-08-23 | 2022-11-15 | 包头晶澳太阳能科技有限公司 | Single crystal broken edge line processing method and single crystal bar |
| CN115341279B (en) * | 2022-08-23 | 2024-04-02 | 包头晶澳太阳能科技有限公司 | Single crystal broken ridge processing method and single crystal rod |
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Application publication date: 20120627 |