CN214327970U - Top temperature measuring structure of silicon carbide single crystal furnace - Google Patents
Top temperature measuring structure of silicon carbide single crystal furnace Download PDFInfo
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- CN214327970U CN214327970U CN202120615808.6U CN202120615808U CN214327970U CN 214327970 U CN214327970 U CN 214327970U CN 202120615808 U CN202120615808 U CN 202120615808U CN 214327970 U CN214327970 U CN 214327970U
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- single crystal
- temperature measuring
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- air inlet
- silicon carbide
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- 239000013078 crystal Substances 0.000 title claims abstract description 43
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 38
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 28
- 239000011521 glass Substances 0.000 claims abstract description 49
- 238000009529 body temperature measurement Methods 0.000 claims abstract description 17
- 238000007664 blowing Methods 0.000 claims abstract description 4
- 238000004891 communication Methods 0.000 claims description 4
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 13
- 229910002804 graphite Inorganic materials 0.000 abstract description 13
- 239000010439 graphite Substances 0.000 abstract description 13
- 230000008569 process Effects 0.000 abstract description 13
- 238000010438 heat treatment Methods 0.000 description 6
- 230000006698 induction Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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Abstract
The utility model discloses a top temperature measuring structure of a silicon carbide single crystal furnace, which comprises an infrared pyrometer arranged above a furnace cover, a first main body communicated above the furnace cover and internally provided with a temperature measuring cavity, a glass plate arranged at the top of the first main body, and an air inlet arranged at the side part of the first main body; the infrared pyrometer is positioned right above the glass plate, and the air inlet is positioned between the glass plate and the furnace cover; the air inlet is used for blowing the lower surface of the glass plate while air is fed. The utility model relates to a carborundum single crystal growing furnace top temperature measurement structure, at the carborundum single crystal growth in-process, the process gas who will continuously let in need lets in from the air inlet, and process gas continuously sweeps glass board lower surface when admitting air to drive away the volatile matter to the glass board lower surface, thereby make the glass board maintain clean bright through, in order to guarantee the precision of infrared pyrometer to the temperature measurement of graphite crucible top, thereby guarantee the stable growth of carborundum single crystal.
Description
Technical Field
The utility model relates to an artificial crystal growth technical field, in particular to temperature measurement structure at top of silicon carbide single crystal furnace.
Background
At present, a physical vapor transport method (PVT method) is a mainstream process technology for growing silicon carbide single crystals, and the technology is characterized in that a silicon carbide seed crystal sheet is bonded on a graphite seed crystal seat under a flowing process gas environment, the graphite seed crystal seat is arranged at the upper part of a graphite crucible, and the silicon carbide single crystals grow on the silicon carbide seed crystals by heating raw materials at the bottom of the crucible and subliming the raw materials; the growth of the silicon carbide single crystal is mainly controlled by measuring the temperature of the upper part of the graphite crucible through the temperature measuring port by the infrared pyrometer, so that the growth of the silicon carbide single crystal is realized, and therefore, the clean transmittance of the glass at the temperature measuring port is the key for ensuring accurate measurement temperature, stable heating temperature and reliable crystal growth.
In the prior art, volatile matters generated in the heating process of the graphite crucible and the heat preservation system are collected and attached to the inner surface of the glass at the temperature measurement port with relatively low temperature, so that a measurement channel of the infrared pyrometer is shielded, the temperature measurement accuracy is influenced, and the stable growth of the silicon carbide single crystal is influenced.
SUMMERY OF THE UTILITY MODEL
The utility model aims at providing a carborundum single crystal growing furnace top temperature measurement structure can guarantee the precision of infrared pyrometer to the temperature measurement of graphite crucible top to guarantee the stable growth of carborundum single crystal.
In order to achieve the above purpose, the utility model adopts the technical scheme that:
a top temperature measurement structure of a silicon carbide single crystal furnace comprises an infrared pyrometer arranged above a furnace cover, a first main body communicated above the furnace cover and internally provided with a temperature measurement cavity, a glass plate arranged at the top of the first main body, and an air inlet arranged at the side part of the first main body;
the infrared pyrometer is positioned right above the glass plate, and the air inlet is positioned between the glass plate and the furnace cover;
and the air inlet is used for blowing the lower surface of the glass plate while air is fed.
Preferably, the air outlet direction of the air inlet is inclined towards the glass plate or vertical to the glass plate.
Preferably, the furnace cover is provided with a communicating opening which is positioned at the bottom of the first main body and communicated with the temperature measuring cavity.
More preferably, the glass plate and the infrared pyrometer are both located directly above the communication port.
Preferably, the temperature measuring structure further comprises a connecting component arranged between the furnace cover and the infrared pyrometer.
More preferably, the coupling assembling includes that longitudinal extension and bottom are connected first connecting rod on the bell, transversely extend and one end is connected the second connecting rod at first connecting rod top, infrared pyrometer is located the second connecting rod other end.
Preferably, the temperature measuring structure further comprises a flange connector for fixing the glass plate and covering the glass plate on the top of the first main body.
Preferably, the temperature measuring structure further comprises an air inlet pipe communicated with the air inlet and protruding out of the side of the first main body.
Because of above-mentioned technical scheme's application, compared with the prior art, the utility model have the following advantage: the utility model relates to a carborundum single crystal growing furnace top temperature measurement structure, at the carborundum single crystal growth in-process, the process gas who will continuously let in need lets in from the air inlet, and process gas continuously sweeps glass board lower surface when admitting air to drive away the volatile matter to the glass board lower surface, thereby make the glass board maintain clean bright through, in order to guarantee the precision of infrared pyrometer to the temperature measurement of graphite crucible top, thereby guarantee the stable growth of carborundum single crystal.
Drawings
FIG. 1 is a schematic structural diagram of a temperature measuring structure at the top of a silicon carbide single crystal furnace according to an embodiment of the present invention.
Wherein: 1. a furnace cover; 2. an infrared pyrometer; 3. a first body; 4. a temperature measuring cavity; 5. a glass plate; 6. an air inlet; 7. a communication port; 8. a first connecting rod; 9. a second connecting rod; 10. a flange connection; 11. an air inlet pipe; 12. a furnace bottom; 13. an air extraction opening; 14. a quartz tube furnace barrel; 15. a crucible shaft; 16. a heat-preserving cover; 17. a graphite crucible; 18. an induction coil.
Detailed Description
The technical solution of the present invention will be further explained with reference to the following embodiments and the accompanying drawings.
Referring to fig. 1, the present embodiment provides a top temperature measurement structure of a silicon carbide single crystal furnace, which is arranged on a furnace cover 1.
The furnace cover 1, the furnace bottom 12 below the furnace cover and the quartz tube furnace tube 14 between the furnace cover and the furnace bottom form a whole body with a closed furnace chamber, namely a silicon carbide single crystal furnace. An extraction opening 13 for vacuumizing the closed furnace chamber is arranged in the furnace bottom 12. The crucible shaft 15 is arranged in the furnace bottom 12 in a penetrating way in a lifting way, a graphite crucible 17 positioned at the top of the crucible shaft 15 is arranged in the furnace chamber, and an induction coil 18 used for heating is annularly arranged outside the quartz tube furnace tube 14.
The top temperature measurement structure of the silicon carbide single crystal furnace comprises an infrared pyrometer 2 arranged above a furnace cover 1, a first main body 3 communicated above the furnace cover 1 and internally provided with a temperature measurement cavity 4, a glass plate 5 arranged at the top of the first main body 3, and an air inlet 6 arranged at the side part of the first main body 3.
The gas inlet 6 is used for introducing process gas, and the gas inlet process comprises a heating and temperature rising stage, a crystal growth stage and a temperature reduction to normal temperature stage. That is, the process gas can be introduced into the first body 3 and the chamber through the gas inlet 6 during the entire process of growing the silicon carbide single crystal.
The infrared pyrometer 2 is positioned right above the glass plate 5, and the air inlet 6 is positioned between the glass plate 5 and the furnace cover 1; the gas inlet 6 is used for blowing the lower surface of the glass plate 5 simultaneously with the gas introduction. The outlet direction of the inlet 6 is inclined toward the glass plate 5 or vertical toward the glass plate 5.
The furnace cover 1 is provided with a communicating port 7 which is positioned at the bottom of the first main body 3 and communicated with the temperature measuring cavity 4. In the present embodiment, the glass plate 5 and the infrared pyrometer 2 are both located directly above the communication port 7. With this arrangement, the upper portion of the graphite crucible 17 can be directly irradiated through the glass plate 5 when the infrared pyrometer 2 is directed downward.
The infrared pyrometer 2 was directed downward through the glass plate 5 and measured the temperature of the upper portion of the graphite crucible 17 to control the heating power of the induction coil 18, thereby achieving stable growth of the silicon carbide single crystal. Through the direction slope or the perpendicular lower surface towards glass plate 5 that gives vent to anger that makes air inlet 6, the process gas that will continuously let in again lets in from air inlet 6, and process gas continuously sweeps glass plate 5 lower surface when admitting air to drive away the volatile matter of glass plate 5 lower surface, thereby make glass plate 5 maintain clean bright, in order to guarantee the precision of infrared pyrometer 2 to the temperature measurement of graphite crucible 17 top, thereby guarantee the stable growth of carborundum single crystal.
In general, the air inlet 6 is directly formed at the side of the first body 3, and the air outlet direction thereof is inclined toward the lower surface of the glass plate 5. In order to realize that the air outlet direction can vertically face to the lower surface of the glass plate 5, only an air guide pipe is connected to the air outlet end of the air inlet 6, and the air guide pipe can be L-shaped. The vertical section of the L-shaped air guide pipe vertically faces the glass plate 5, and the horizontal section of the L-shaped air guide pipe is communicated with the air outlet end of the air inlet 6.
In this embodiment, the temperature measuring structure at the top of the silicon carbide single crystal furnace further includes an air inlet pipe 11 communicating with the air inlet 6 and protruding out of the side of the first main body 3. Referring to fig. 1, the inlet pipe 11 and the inlet 6 have the same axial center line, and are used for introducing the process gas.
The top temperature measurement structure of the silicon carbide single crystal furnace further comprises a connecting assembly arranged between the furnace cover 1 and the infrared pyrometer 2.
In this embodiment, the connecting assembly includes a first connecting rod 8 extending longitudinally and having a bottom connected to the furnace lid 1, a second connecting rod 9 extending transversely and having one end connected to the top of the first connecting rod 8, and the infrared pyrometer 2 is disposed at the other end of the second connecting rod 9. Referring to fig. 1, the other end of the second connecting rod 9 is positioned right above the glass plate 5; the first connecting rod 8 is higher than the first body 3.
The top temperature measuring structure of the silicon carbide single crystal furnace further comprises a flange connecting piece 10 which is used for fixing the glass plate 5 and is arranged on the top of the first main body 3 in a covering mode. In this embodiment, the flange connector 10 has a top-opened hat shape, and the glass plate 5 has a circular shape, and they are coaxially arranged.
The above embodiments are only for illustrating the technical concept and features of the present invention, and the purpose of the embodiments is to enable people skilled in the art to understand the contents of the present invention and to implement the present invention, which cannot limit the protection scope of the present invention. All equivalent changes and modifications made according to the spirit of the present invention should be covered by the protection scope of the present invention.
Claims (8)
1. The utility model provides a carborundum single crystal growing furnace top temperature measurement structure which characterized in that: the device comprises an infrared pyrometer arranged above a furnace cover, a first main body which is communicated above the furnace cover and is internally provided with a temperature measuring cavity, a glass plate arranged at the top of the first main body, and an air inlet arranged at the side part of the first main body;
the infrared pyrometer is positioned right above the glass plate, and the air inlet is positioned between the glass plate and the furnace cover;
and the air inlet is used for blowing the lower surface of the glass plate while air is fed.
2. The top temperature measuring structure of the silicon carbide single crystal furnace according to claim 1, wherein: the air outlet direction of the air inlet is inclined towards the glass plate or vertically towards the glass plate.
3. The top temperature measuring structure of the silicon carbide single crystal furnace according to claim 1, wherein: and a communicating port which is positioned at the bottom of the first main body and communicated with the temperature measuring cavity is formed in the furnace cover.
4. The top temperature measuring structure of the silicon carbide single crystal furnace according to claim 3, wherein: the glass plate and the infrared pyrometer are both positioned right above the communication port.
5. The top temperature measuring structure of the silicon carbide single crystal furnace according to claim 1, wherein: the temperature measuring structure further comprises a connecting component arranged between the furnace cover and the infrared pyrometer.
6. The top temperature measuring structure of the silicon carbide single crystal furnace according to claim 5, wherein: coupling assembling includes that longitudinal extension and bottom are connected first connecting rod, horizontal extension and one end on the bell are connected the second connecting rod at first connecting rod top, infrared pyrometer is located the second connecting rod other end.
7. The top temperature measuring structure of the silicon carbide single crystal furnace according to claim 1, wherein: the temperature measuring structure further comprises a flange connecting piece which is used for fixing the glass plate and is covered on the top of the first main body.
8. The top temperature measuring structure of the silicon carbide single crystal furnace according to claim 1, wherein: the temperature measuring structure further comprises an air inlet pipe which is communicated with the air inlet and protrudes out of the side part of the first main body.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120615808.6U CN214327970U (en) | 2021-03-26 | 2021-03-26 | Top temperature measuring structure of silicon carbide single crystal furnace |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120615808.6U CN214327970U (en) | 2021-03-26 | 2021-03-26 | Top temperature measuring structure of silicon carbide single crystal furnace |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114318516A (en) * | 2021-12-24 | 2022-04-12 | 国宏中宇科技发展有限公司 | Crystal growth furnace air inlet structure and crystal growth furnace |
| CN114754586A (en) * | 2022-05-12 | 2022-07-15 | 眉山博雅新材料股份有限公司 | High-temperature furnace |
| CN115467028A (en) * | 2022-08-24 | 2022-12-13 | 江苏星特亮科技有限公司 | Single crystal growing device |
| TWI849903B (en) * | 2022-05-12 | 2024-07-21 | 大陸商眉山博雅新材料股份有限公司 | A crystal growth device |
-
2021
- 2021-03-26 CN CN202120615808.6U patent/CN214327970U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114318516A (en) * | 2021-12-24 | 2022-04-12 | 国宏中宇科技发展有限公司 | Crystal growth furnace air inlet structure and crystal growth furnace |
| CN114754586A (en) * | 2022-05-12 | 2022-07-15 | 眉山博雅新材料股份有限公司 | High-temperature furnace |
| CN114754586B (en) * | 2022-05-12 | 2023-02-17 | 眉山博雅新材料股份有限公司 | High-temperature furnace |
| TWI849903B (en) * | 2022-05-12 | 2024-07-21 | 大陸商眉山博雅新材料股份有限公司 | A crystal growth device |
| CN115467028A (en) * | 2022-08-24 | 2022-12-13 | 江苏星特亮科技有限公司 | Single crystal growing device |
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