CN102510277A - Metal oxide semiconductor field effect transistor (MOSFET) driving circuit - Google Patents
Metal oxide semiconductor field effect transistor (MOSFET) driving circuit Download PDFInfo
- Publication number
- CN102510277A CN102510277A CN2011104606591A CN201110460659A CN102510277A CN 102510277 A CN102510277 A CN 102510277A CN 2011104606591 A CN2011104606591 A CN 2011104606591A CN 201110460659 A CN201110460659 A CN 201110460659A CN 102510277 A CN102510277 A CN 102510277A
- Authority
- CN
- China
- Prior art keywords
- control valve
- driver module
- level
- module
- mos pipe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Electronic Switches (AREA)
Abstract
The invention discloses a metal oxide semiconductor field effect transistor (MOSFET) driving circuit. A level conversion module converts a low-voltage signal into a high-voltage signal; a first stage of driving module receives the high-voltage signal, all stages of driving modules are sequentially connected in series, and an N-th stage of driving module drives a gate of a switching module; each stage of driving module comprises an upper driving MOS tube, a lower driving MOS tube and a control tube; the control tube of the N-th stage of driving module controls gate and source voltages of the switching module; the control tube of an (i-1)-th stage of driving module controls the gate and source voltages of the upper driving MOS tube and/or the lower driving MOS tube of an i-th stage of driving module; a clamping module supplies bias voltages to the gate and source voltages of a clamping driving tube of each control tube; and each control tube controls the gate and source voltages of each MOS tube of the MOSFET driving circuit, so that the highest operating voltage VIN of the MOSFET driving circuit is free from limitation of gate and source voltages resistance of each MOS tube of the MOSFET driving circuit, and the operating voltage range of the MOSFET driving circuit is expanded.
Description
Technical field
The present invention relates to the MOSFET drive circuit in the electric power management circuit, relate in particular to a kind of MOSFET drive circuit that uses gate source voltage clamper technology.
Background technology
The application of electric power management circuit is very extensive, and most electric power management circuits all need built-in or external MOSFET, and it is N-channel MOS FET or P channel mosfet that nothing is appointed, the drive circuit that all needs the corresponding driving ability to increase step by step.
Figure 1A is depicted as the traditional MOSFET drive circuit; Said switch module (11) is the combination of N-channel MOS FET or P channel mosfet or N raceway groove and P channel mosfet, and the input of switch module connects the output of driver module (12); The input of said driver module (12) connects the output of level switch module (13), and the output of said driver module connects switch module; The input of said level switch module (13) is as control signal, and output connects driver module; Level switch module converts low-voltage control signal to high voltage control signal, passes through the switch motion of driver module control switch module again; Said switch module (11) is the combination of N-channel MOS FET or P channel mosfet or N raceway groove and P channel mosfet, and the input of switch module connects the output of driver module (12).
The concrete application of the drive circuit of MOSFET shown in Figure 1A in the P channel mosfet drives is shown in Figure 1B; Said driver module (12) is made up of the second metal-oxide-semiconductor M2, the 3rd metal-oxide-semiconductor M3, the 11 metal-oxide-semiconductor M11, the 12 metal-oxide-semiconductor M12; The grid of the 3rd metal-oxide-semiconductor M3 links to each other with the grid of the 12 metal-oxide-semiconductor M12; And connecting the output of said level switch module (13), the drain electrode of the second metal-oxide-semiconductor M2, the 11 metal-oxide-semiconductor M11 connects the grid of the switch module first metal-oxide-semiconductor M1 as the output of driver module; Said level switch module (13) is made up of the 4th metal-oxide-semiconductor M4, the 5th metal-oxide-semiconductor M5, the 13 metal-oxide-semiconductor M13, the 14 metal-oxide-semiconductor M14; The grid of the 14 metal-oxide-semiconductor M14 is held as the first control signal Pctrl that is input as of level switch module; The grid of the 13 metal-oxide-semiconductor M13 is held as the second control signal Nctrl that is input as of level switch module; The first control signal Pctrl and the second control signal Nctrl are complementary input control signal, and the drain electrode of the 4th metal-oxide-semiconductor M4, the 13 metal-oxide-semiconductor M13 and the grid of the 5th metal-oxide-semiconductor M5 link to each other and be connected the input of driver module (22); Said switch module (11) is the P channel mosfet first metal-oxide-semiconductor M1; The source electrode of the first metal-oxide-semiconductor M1 is as the input signal VIN port of drive circuit; The drain electrode of the first metal-oxide-semiconductor M1 is as output signal VOUT port, and the grid of the first metal-oxide-semiconductor M1 connects the output of driver module (12).
Above-mentioned traditional MOSFET drive circuit; The operating voltage VIN of its input signal VIN port is activated the withstand voltage restriction in grid source of all driving tubes in the circuit; P channel mosfet drive circuit with shown in Figure 1B is an example; The first control signal Pctrl and the second control signal Nctrl are complementary input control signal, and this drive circuit has two kinds of operating states:
First kind be the first control signal Pctrl be high level, when the second control signal Nctrl is low level: the 14 metal-oxide-semiconductor M14, the 4th metal-oxide-semiconductor M4, the 12 metal-oxide-semiconductor M12, the second metal-oxide-semiconductor M2 conducting; The 13 metal-oxide-semiconductor M13, the 5th metal-oxide-semiconductor M5, the 3rd metal-oxide-semiconductor M3, the 11 metal-oxide-semiconductor M11, the first metal-oxide-semiconductor M1 turn-off; Its drain-source voltage is 0 when supposing the pipe conducting; Then the 14 metal-oxide-semiconductor M14, the 4th metal-oxide-semiconductor M4, the 12 metal-oxide-semiconductor M12, the second metal-oxide-semiconductor M2; Voltage between its grid, the two ends, source equals applied signal voltage VIN; In order to guarantee the drive circuit operate as normal, what applied signal voltage VIN can not be greater than can bear between the two ends, grid source of the 14 metal-oxide-semiconductor M14, the 4th metal-oxide-semiconductor M4, the 12 metal-oxide-semiconductor M12, the second metal-oxide-semiconductor M2 is withstand voltage;
Second kind be the second control signal Nctrl be high level, when the first control signal Pctrl is low level: the 13 metal-oxide-semiconductor M13, the 5th metal-oxide-semiconductor M5, the 3rd metal-oxide-semiconductor M3, the 11 metal-oxide-semiconductor M11, the first metal-oxide-semiconductor M1 conducting; The 14 metal-oxide-semiconductor M14, the 4th metal-oxide-semiconductor M4, the 12 metal-oxide-semiconductor M12, the second metal-oxide-semiconductor M2 turn-off; Its drain-source voltage is 0 when supposing the pipe conducting; Then the 13 metal-oxide-semiconductor M13, the 5th metal-oxide-semiconductor M5, the 3rd metal-oxide-semiconductor M3, the 11 metal-oxide-semiconductor M11, the first metal-oxide-semiconductor M1; Voltage between its grid, the two ends, source equals applied signal voltage VIN; In order to guarantee the drive circuit operate as normal, what applied signal voltage VIN can not be greater than can bear between the two ends, grid source of the 13 metal-oxide-semiconductor M13, the 5th metal-oxide-semiconductor M5, the 3rd metal-oxide-semiconductor M3, the 11 metal-oxide-semiconductor M11, the first metal-oxide-semiconductor M1 is withstand voltage;
Therefore; P channel mosfet drive circuit shown in Figure 1B; The operating voltage VIN of its input signal port must be withstand voltage less than the grid source of all pipes in the drive circuit, so the maximum operating voltage scope of applied signal voltage VIN is activated the withstand voltage restriction in grid source of pipe in the circuit.
Summary of the invention
The present invention will solve the deficiency of prior art, and a kind of MOSFET drive circuit that can improve MOSFET drive circuit maximum operating voltage is provided.
A kind of MOSFET drive circuit comprises:
Level switch module, said level switch module are under the control of control signal, and the low-voltage signal that input is imported converts high-voltage signal into, and said high-voltage signal is through output output;
N level driver module, said N are the positive integer more than or equal to 1, and said first order driver module connects the output of level switch module, receive high-voltage signal, and driver modules at different levels are connected successively, the grid end of the output driving switch module of N level driver module; Each grade driver module comprises driven MOS pipe, following driven MOS pipe and control valve; First end of last driven MOS pipe connects power end; The first end ground connection of following driving tube; Connect control valve between second end of last driven MOS pipe and second end of following driven MOS pipe; The gate source voltage of the control valve control switch module of N level driver module, the control valve of i-1 level driver module are controlled the last driven MOS pipe of i level driver module and/or the gate source voltage of following driven MOS pipe, wherein any positive integer of 1＜=i＜N;
The clamper module, said clamper module is connected between power supply and the ground, and the output of clamper module connects the grid end of each control valve, for the gate source voltage of control valve clamper driving tube provides bias voltage.
Switch module, first control end of said switch module connects power supply, and second control end is as the output of MOSFET drive circuit, and the grid of said switch module connects the output of driver module.
Further, said level switch module comprises control valve and level conversion pipe, the last driven MOS pipe of the control valve control first order driver module of said level switch module and/or the gate source voltage of following driven MOS pipe;
Further, the control valve of said level switch module, the gate source voltage of level conversion metal-oxide-semiconductor in the control level modular converter.
Further, the last driving tube of said driver module is the PMOS pipe, and first end of last driven MOS pipe is the source end; Second end of last driven MOS pipe is a drain terminal; The following driving tube of said driver module is the NMOS pipe, and first end of following driving tube is the source end, and second end of following driven MOS pipe is a drain terminal.
Further, said switch module is the P channel mosfet, and first control end of switch module is the source end, and second control end of switch module is a drain terminal.
Further, said switch module is N-channel MOS FET, and first control end of switch module is a drain terminal, and second control end of switch module is the source end.
Further; The control valve of N level driver module is controlled the gate source voltage of said P channel mosfet; The control valve of i-1 level driver module comprises first control valve and second control valve; Said first control valve is controlled the gate source voltage of the last driven MOS pipe of i level driver module, and said second control valve is controlled the gate source voltage of the following driven MOS pipe of i level driver module.
Further; The control valve of N level driver module is controlled the gate source voltage of said N-channel MOS FET; The control valve of i-1 level driver module comprises first control valve and second control valve; Said first control valve is controlled the gate source voltage of the last driven MOS pipe of i level driver module, and said second control valve is controlled the gate source voltage of the following driven MOS pipe of i level driver module.
Further, the control valve of N level driver module is controlled the gate source voltage of said P channel mosfet, and the control valve of i-1 level driver module comprises that a said control valve of control valve controls the gate source voltage of the last driven MOS pipe of i level driver module.
Further, the control valve of N level driver module is controlled the gate source voltage of said N-channel MOS FET, and the control valve of i-1 level driver module comprises that a said control valve of control valve controls the gate source voltage of the following driven MOS pipe of i level driver module.
The invention has the beneficial effects as follows: the gate source voltage of each metal-oxide-semiconductor of the control valve control MOSFET drive circuit of N level driver module and level switch module; Avoid the maximum operating voltage VIN of MOSFET drive circuit to receive the withstand voltage restriction in grid source of each metal-oxide-semiconductor of MOSFET drive circuit, improved the MOSFET drive circuit operating voltage range.
Description of drawings
Figure 1A is the structure chart of conventional MOS FET drive circuit.
Figure 1B is the concrete realization figure of conventional P channel mosfet drive circuit.
The MOSFET drive circuit that Fig. 2 proposes for the present invention.
The MOSFET drive circuit that Fig. 3 proposes for the present invention.
The MOSFET drive circuit that Fig. 4 proposes for the present invention.
The MOSFET drive circuit that Fig. 5 proposes for the present invention.
The MOSFET drive circuit that Fig. 6 proposes for the present invention.
Embodiment
Below in conjunction with accompanying drawing content of the present invention is further specified.
For solving the problem that the circuit maximum operating voltage receives grid source breakdown voltage limit, the invention provides a kind of MOSFET drive circuit.
A kind of MOSFET drive circuit comprises:
N level driver module 22, said N are the positive integer more than or equal to 1, and said first order driver module connects the output of level switch module, receive high-voltage signal, and driver modules at different levels are connected successively, the grid end of the output driving switch module of N level driver module; Each grade driver module comprises driven MOS pipe, following driven MOS pipe and control valve; First end of last driven MOS pipe connects power end; The first end ground connection of following driving tube; Connect control valve between second end of last driven MOS pipe and second end of following driven MOS pipe; The gate source voltage of the control valve control switch module of N level driver module, the control valve of i-1 level driver module are controlled the last driven MOS pipe of i level driver module and/or the gate source voltage of following driven MOS pipe, wherein any positive integer of 1＜=i＜N;
Said level switch module 22 comprises control valve and level conversion pipe, and the control valve of said level switch module is connected in the conducting branch road of level switch module, the last driven MOS pipe of control first order driver module and/or the gate source voltage of following driven MOS pipe;
The control valve of said level switch module, the also gate source voltage of level conversion metal-oxide-semiconductor in the control level modular converter.
The last driving tube of said driver module is the PMOS pipe; First end of last driven MOS pipe is the source end, and second end of last driven MOS pipe is a drain terminal, and the following driving tube of said driver module is the NMOS pipe; First end of following driving tube is the source end, and second end of following driven MOS pipe is a drain terminal.Below in conjunction with specific embodiment and accompanying drawing the present invention is described further, but should limit protection scope of the present invention with this.
In the present invention; With following level switch module is that example describes, and the level switch module in the present embodiment only is a kind of example, and any those skilled in the art are not breaking away from the spirit and scope of the present invention; Can make possible change and modification; Level switch module can have multiple implementation, and the disclosed level switch module of present embodiment can not be used for limiting the present invention.
Like Fig. 2, Fig. 3, Fig. 4, Fig. 5, shown in Figure 6, level switch module is a common mode configuration, comprises that PMOS pipe M4, NMOS manage M14; PMOS pipe M5, NMOS manage M13, and the source end of PMOS pipe M4 is connected power supply VIN with the source end of PMOS pipe M5, and the grid end of PMOS pipe M4 is connected with the drain terminal of PMOS pipe M5; The grid end of PMOS pipe M5 is connected with the drain terminal of PMOS pipe M4; Source end and the PMOS of NMOS pipe M14 manage the source end ground connection of M5, connect the control valve M8 of level switch module between the drain terminal of the drain terminal of PMOS pipe M4 and NMOS pipe M13, connect the control valve M9 of level switch module between the drain terminal that the drain terminal of PMOS pipe M5 and NMOS manage M14; Control valve M8 is the PMOS pipe; Control valve M9 is a PMOS pipe PMOS pipe, and the drain terminal of M4 connects the source end of control valve M8, and the drain terminal of NMOS pipe M13 connects the leakage level of control valve M8; The drain terminal of PMOS pipe M5 connects the source end of control valve M9; The drain terminal of NMOS pipe M14 connects the leakage level of control valve M9, and the grid end of control valve M8 and control valve M9 is connected merge module, and the grid end of NMOS pipe M14 is imported the first control signal Pctrl; The grid end of NMOS pipe M15 is imported the second control signal Nctrl, and the source end of control valve M8 connects the first order driver module of N level driver module and exports high-voltage signal as the output of level switch module.
Described control valve M8 and M9 are connected in the conducting branch road of level switch module; The gate source voltage of level conversion metal-oxide-semiconductor in the control level modular converter; Wherein control valve M8 control PMOS manages the gate source voltage of M5; The gate source voltage of control valve M9 control PMOS pipe M4, control valve is also controlled the gate source voltage of the last driven MOS pipe M3 of first order driver module simultaneously.
In the present invention; With following N level driver module is that example describes, and the N level driver module in the present embodiment only is a kind of example, and any those skilled in the art are not breaking away from the spirit and scope of the present invention; Can make possible change and modification; N level driver module can have multiple implementation, and the disclosed N level of present embodiment driver module can not be used for limiting the present invention.
N level driver module 22 as shown in Figure 2 is 2 grades of driver modules, is used to drive the grid end of P channel mosfet M1.First order driver module connects the output of level switch module, receives high-voltage signal, and first order driver module and second level driver module are connected successively, the grid end of the output driving switch module of second level driver module, i.e. the grid end of P channel mosfet M1.First order driver module comprises the control valve of driven MOS pipe (being PMOS pipe M3), following driven MOS pipe (being NMOS pipe M12) and first order driver module; The source end of PMOS pipe M3 connects power supply VIN; The source end ground connection of NMOS pipe M12; The control valve of first order driver module comprises that two control valves are respectively PMOS pipe M7 and NMOS pipe M10; Connect PMOS pipe and NMOS pipe M10 between the drain terminal of the drain terminal of PMOS pipe M3 and NMOS pipe M12; PMOS pipe M7 is connected the last driven MOS pipe (being the grid end of PMOS pipe M2) of second level driver module and the following driven MOS pipe (being the grid end of NMOS pipe M11) of second level driver module respectively with the source end of NMOS pipe M10; PMOS pipe M7 is connected the clamper module with the grid end of NMOS pipe M10, thereby controls the last driven MOS pipe (being PMOS pipe M2) of second level driver module and the gate source voltage of following driven MOS pipe (being NMOS pipe M11) respectively by PMOS pipe M7 and NMOS pipe M10; Second level driver module comprises the control valve (being PMOS pipe M6) of driven MOS pipe (being PMOS pipe M2), following driven MOS pipe (being NMOS pipe M11) and second level driver module; The source end of PMOS pipe M2 connects power supply VIN; The source end ground connection of NMOS pipe M11; Connect PMOS pipe M6 between the drain terminal of the drain terminal of PMOS pipe M2 and NMOS pipe M11, the source end of PMOS pipe M6 is as the output of second level driver module and control the gate source voltage of P channel mosfet M1, and the grid end of PMOS pipe M6 connects the clamper module.
N level driver module 22 as shown in Figure 3 is the distortion of N level driver module 22 shown in Figure 2; Its discrepancy is that the control valve of first order driver module comprises control valve PMOS pipe M7; The control valve that is the one-level driver module is only controlled the last driving tube of second level driver module, and does not control the following driving tube of second level driver module.
N level driver module 22 as shown in Figure 5 is the expansion of N level driver module 22 shown in Figure 2, and promptly 2 grades of driver modules by Fig. 2 expand to N level driver module, and its operation principle is similar with Fig. 2, no longer repeats at this.
N level driver module 22 as shown in Figure 4 is 2 grades of driver modules, is used for the grid end of driving N channel mosfet.First order driver module connects the output of level switch module, receives high-voltage signal, and first order driver module and second level driver module are connected successively, the grid end of the output driving switch module of second level driver module, i.e. the grid end of N-channel MOS FET M31.First order driver module comprises the control valve of driven MOS pipe (being PMOS pipe M3), following driven MOS pipe (being NMOS pipe M12) and first order driver module; The source end of PMOS pipe M3 connects power supply VIN; The drain terminal ground connection of NMOS pipe M12; The control valve of first order driver module comprises that two control valves are respectively PMOS pipe M7 and NMOS pipe M10; Connect PMOS pipe M7 and NMOS pipe M10 between the drain terminal of the drain terminal of PMOS pipe M3 and NMOS pipe M12; PMOS pipe M7 is connected the last driven MOS pipe (being the grid end of PMOS pipe M2) of second level driver module and the following driven MOS pipe (being the grid end of NMOS pipe M11) of second level driver module respectively with the source end of NMOS pipe M10; PMOS pipe M7 is connected the clamper module with the grid end of NMOS pipe M10, thereby controls the last driven MOS pipe (being PMOS pipe M2) of second level driver module and the gate source voltage of following driven MOS pipe (being NMOS pipe M11) respectively by PMOS pipe M7 and NMOS pipe M10; Second level driver module comprises the control valve (being PMOS pipe M6) of driven MOS pipe (being PMOS pipe M2), following driven MOS pipe (being NMOS pipe M11) and second level driver module; The source end of PMOS pipe M2 connects power supply VIN; The source end ground connection of NMOS pipe M11; Connect PMOS pipe M6 between the drain terminal of the drain terminal of PMOS pipe M2 and NMOS pipe M11, the source end of PMOS pipe M6 is as the output of second level driver module and control the gate source voltage of N-channel MOS FET M31, and the grid end of PMOS pipe M6 connects the clamper module.
N level driver module 22 as shown in Figure 6 is the expansion of N level driver module 22 shown in Figure 4, and promptly 2 grades of driver modules by Fig. 2 expand to N level driver module, and its operation principle is similar with Fig. 4, no longer repeats at this.
In the present invention; With following clamper module is that example describes, and the clamper module in the present embodiment only is a kind of example, and any those skilled in the art are not breaking away from the spirit and scope of the present invention; Can make possible change and modification; Clamper can have multiple implementation, and the disclosed clamper module of present embodiment can not be used for limiting the present invention.
Like Fig. 2,4,5, the module of clamper shown in 6 24; Comprise voltage stabilizing didoe D1, resistance R 1, voltage stabilizing didoe D2 and resistance R 2; The negative electrode of voltage stabilizing didoe D1 connects power supply VIN; The anode of voltage stabilizing didoe is through resistance R 1 ground connection; The plus earth of voltage stabilizing didoe D2, the negative electrode of voltage stabilizing didoe connect control in power supply VIN, the driver module through resistance R 2 and go up the anode that the grid of the control valve of the grid of the control valve of driving tube, level switch module is connected to voltage stabilizing didoe D1, in the driver module control down the grid of the control valve of driving tube be connected to the anode of voltage stabilizing didoe D2.
Drive circuit as shown in Figure 2 is used to drive the grid end of P channel mosfet M1.The said first control signal Pctrl and the second control signal Nctrl are complementary input control signals; The ceiling voltage of the first control signal Pctrl is no more than grid source puncture voltage Vgs12 (max), the Vgs14 (max) of metal-oxide-semiconductor M12, metal-oxide-semiconductor M14, and the grid source puncture voltage that the ceiling voltage of the second control signal Nctrl is no more than metal-oxide-semiconductor M13 is Vgs13 (max)); The voltage of supposing input signal VIN end, second control signal Nctrl end, first control signal Pctrl end is respectively input voltage VIN, the second control signal Nctrl, the first control signal Pctrl, and the clamp voltage of the first voltage-stabiliser tube D1 and the 2nd voltage-stabiliser tube D2 is respectively VD1, VD2; The cut-in voltage of metal-oxide-semiconductor M6, metal-oxide-semiconductor M7, metal-oxide-semiconductor M8, metal-oxide-semiconductor M9, metal-oxide-semiconductor M10 is respectively Vth6, Vth7, Vth8, Vth9, Vth10.
Drive circuit shown in Figure 2 has two kinds of operating states:
First kind be the first control signal Pctrl be high level, when the second control signal Nctrl is low level:
Metal-oxide-semiconductor M14 conducting; M9 turn-offs; M4 conducting, the grid end of metal-oxide-semiconductor the M4 just voltage of the source end of metal-oxide-semiconductor M9 are VIN-VD1+Vth9, and the source voltage terminal of metal-oxide-semiconductor M4 is an input voltage VIN; So the gate source voltage of metal-oxide-semiconductor M4 is VIN-(VIN-VD1+Vth9)=VD1-Vth9, the gate source voltage of M4 has been carried out clamper through control valve M9;
Metal-oxide-semiconductor M13 turn-offs, the M8 conducting, and M5 turn-offs, and the grid end of metal-oxide-semiconductor M5 and the M3 just voltage of the source end of metal-oxide-semiconductor M8 is VIN, and the source voltage terminal of metal-oxide-semiconductor M3, M5 is an input voltage VIN, so the gate source voltage of metal-oxide-semiconductor M3, M5 is 0;
Metal-oxide-semiconductor M12 conducting; The M10 conducting, M3 turn-offs, and M7 turn-offs; The grid end of the metal-oxide-semiconductor M2 just voltage of the source end of drain terminal and the M7 of metal-oxide-semiconductor M3 is VIN-VD1+Vth7; The source voltage terminal of metal-oxide-semiconductor M2 is an input voltage VIN, so the gate source voltage of metal-oxide-semiconductor M2 is VIN-(VIN-VD1+Vth7)=VD1-Vth7, through control valve M7 the gate source voltage of M2 has been carried out clamper; The M10 conducting; The grid end of the metal-oxide-semiconductor M11 just voltage of the source end of drain terminal and the M10 of metal-oxide-semiconductor M12 is VD2-Vth10; The source voltage terminal of metal-oxide-semiconductor M11 is 0, so the gate source voltage of metal-oxide-semiconductor M11 is VD2-Vth10, through control valve M10 the gate source voltage of M11 has been carried out clamper;
Metal-oxide-semiconductor M2 conducting, the M6 conducting, M11 turn-offs, and the grid end of the metal-oxide-semiconductor M1 just voltage of the source end of drain terminal and the M6 of metal-oxide-semiconductor M2 is VIN, and the source voltage terminal of metal-oxide-semiconductor M1 is an input voltage VIN, so the gate source voltage of metal-oxide-semiconductor M1 is 0;
The gate source voltage of metal-oxide-semiconductor M14, metal-oxide-semiconductor M12 is the first control signal Pctrl;
Metal-oxide-semiconductor M13, metal-oxide-semiconductor M5, metal-oxide-semiconductor M3, metal-oxide-semiconductor M11, metal-oxide-semiconductor M1 turn-off; The gate source voltage of metal-oxide-semiconductor M13, metal-oxide-semiconductor M5, metal-oxide-semiconductor M3, metal-oxide-semiconductor M11, metal-oxide-semiconductor M1 all is 0;
The gate source voltage Vgs9=Vth9 of control valve M9, the gate source voltage Vgs8=VD1 of control valve M8, the gate source voltage Vgs7=Vth7 of control valve M7, the gate source voltage Vgs6=VD1 of control valve M6; The gate source voltage Vgs10=VD2 of control valve M10;
This shows, all metal-oxide-semiconductors, the maximum Vgs of its gate source voltage (max1)=max (VD1, VD2, the first control signal Pctrl), max (VD1, VD2, the first control signal Pctrl) is the maximum of VD1, VD2, the first control signal Pctrl.
Second kind be the first control signal Pctrl be low level, when the second control signal Nctr is high level:
Metal-oxide-semiconductor M14 turn-offs, the M9 conducting, and M4 turn-offs, and the grid end of the metal-oxide-semiconductor M4 just voltage of the source end of metal-oxide-semiconductor M9 is VIN, and the source voltage terminal of metal-oxide-semiconductor M4 is an input voltage VIN, so the gate source voltage of metal-oxide-semiconductor M4 is 0;
Metal-oxide-semiconductor M13 conducting; M8 turn-offs; M5 conducting, the grid end of metal-oxide-semiconductor M5 and the M3 just voltage of the source end of metal-oxide-semiconductor M8 are VIN-VD1+Vth8, and the source voltage terminal of metal-oxide-semiconductor M3, M5 is an input voltage VIN; So the gate source voltage of metal-oxide-semiconductor M3, M5 is VIN-(VIN-VD1+Vth8)=VD1-Vth8, the gate source voltage of M3, M5 has been carried out clamper through control valve M8;
Metal-oxide-semiconductor M12 turn-offs, and M10 turn-offs, the M3 conducting, and the M7 conducting, the grid end of the metal-oxide-semiconductor M2 just voltage of the source end of drain terminal and the M7 of metal-oxide-semiconductor M3 is VIN, the source voltage terminal of metal-oxide-semiconductor M2 is an input voltage VIN, so the gate source voltage of metal-oxide-semiconductor M2 is 0; M12 turn-offs, and M10 turn-offs, and the grid end of the metal-oxide-semiconductor M11 just voltage of the source end of drain terminal and the M10 of metal-oxide-semiconductor M12 is VD2-Vth10, and the source voltage terminal of metal-oxide-semiconductor M11 is 0, so the gate source voltage of metal-oxide-semiconductor M11 is VD2-Vth10;
Metal-oxide-semiconductor M2 turn-offs; M6 turn-offs; M11 conducting, the grid end of metal-oxide-semiconductor the M1 just voltage of the source end of drain terminal and the M6 of metal-oxide-semiconductor M2 are VIN-VD1+Vth6, and the source voltage terminal of metal-oxide-semiconductor M1 is an input voltage VIN; So the gate source voltage of metal-oxide-semiconductor M1 is VIN-(VIN-VD1+Vth6)=VD1-Vth6, the gate source voltage of M1 has been carried out clamper through control valve M6;
The gate source voltage of metal-oxide-semiconductor M13 is the second control signal Nctrl.
The gate source voltage Vgs8=Vth8 of control valve M8, the gate source voltage Vgs9=VD1 of control valve M9, the gate source voltage Vgs6=Vth6 of control valve M6, the gate source voltage Vgs7=VD1 of control valve M7; The gate source voltage Vgs10=Vth10 of control valve M10;
This shows, all metal-oxide-semiconductors, the maximum Vgs of its gate source voltage (max2)=max (VD1, VD2, the second control signal Nctrl), max (VD1, VD2, the second control signal Nctrl) is the maximum of VD1, VD2, the second control signal Nctrl.
In sum; Drive circuit shown in Figure 2 is under any operating state; The maximum of the gate source voltage of its all metal-oxide-semiconductors is max (VD1, VD2, the second control signal Nctrl, the first control signal Pctrl), and max (VD1, VD2, the second control signal Nctrl, the first control signal Pctrl) is the maximum of VD1, VD2, the second control signal Nctrl, the first control signal Pctrl.Therefore only need to set the value of VD1, VD2, the second control signal Nctrl, the first control signal Pctrl; Make the grid source puncture voltage of max (VD1, VD2, the second control signal Nctrl, the first control signal Pctrl) less than any driving tube; Then the operating voltage VIN of drive circuit can not receive the restriction of the grid source puncture voltage of driving tube, has improved the scope of drive circuit works voltage VIN.
Though the present invention with preferred embodiment openly as above; But it is not to be used for limiting the present invention; Any those skilled in the art are not breaking away from the spirit and scope of the present invention; Can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.
Claims (17)
1. a MOSFET drive circuit is characterized in that, comprising:
Level switch module, said level switch module are under the control of control signal, and the low-voltage signal that input is imported converts high-voltage signal into, and said high-voltage signal is through output output;
N level driver module, said N are the positive integer more than or equal to 1, and said first order driver module connects the output of level switch module, receive high-voltage signal, and driver modules at different levels are connected successively, the grid end of the output driving switch module of N level driver module; Each grade driver module comprises driven MOS pipe, following driven MOS pipe and control valve; First end of last driven MOS pipe connects power end; The first end ground connection of following driving tube; Connect control valve between second end of last driven MOS pipe and second end of following driven MOS pipe; The gate source voltage of the control valve control switch module of N level driver module, the control valve of i-1 level driver module are controlled the last driven MOS pipe of i level driver module and/or the gate source voltage of following driven MOS pipe, wherein any positive integer of 1＜=i＜N;
The clamper module, said clamper module is connected between power supply and the ground, and the output of clamper module connects the grid end of each control valve, for the gate source voltage of control valve clamper driving tube provides bias voltage;
Switch module, first control end of said switch module connects power supply, and second control end is as the output of MOSFET drive circuit, and the grid of said switch module connects the output of driver module.
2. MOSFET drive circuit according to claim 1; It is characterized in that: the last driving tube of said driver module is the PMOS pipe; First end of last driven MOS pipe is the source end, and second end of last driven MOS pipe is a drain terminal, and the following driving tube of said driver module is the NMOS pipe; First end of following driving tube is the source end, and second end of following driven MOS pipe is a drain terminal.
3. like the said MOSFET drive circuit of claim 2, it is characterized in that: said switch module is the P channel mosfet, and first control end of switch module is the source end, and second control end of switch module is a drain terminal.
4. like the said MOSFET drive circuit of claim 2, it is characterized in that: said switch module is N-channel MOS FET, and first control end of switch module is a drain terminal, and second control end of switch module is the source end.
5. like the said MOSFET drive circuit of claim 3; It is characterized in that: the control valve of N level driver module is controlled the gate source voltage of said P channel mosfet; The control valve of i-1 level driver module comprises first control valve and second control valve; Said first control valve is controlled the gate source voltage of the last driven MOS pipe of i level driver module, and said second control valve is controlled the gate source voltage of the following driven MOS pipe of i level driver module.
6. like the said MOSFET drive circuit of claim 4; It is characterized in that: the control valve of N level driver module is controlled the gate source voltage of said N-channel MOS FET; The control valve of i-1 level driver module comprises first control valve and second control valve; Said first control valve is controlled the gate source voltage of the last driven MOS pipe of i level driver module, and said second control valve is controlled the gate source voltage of the following driven MOS pipe of i level driver module.
7. like the said MOSFET drive circuit of claim 3; It is characterized in that: the control valve of N level driver module is controlled the gate source voltage of said P channel mosfet, and the control valve of i-1 level driver module comprises that a said control valve of control valve controls the gate source voltage of the last driven MOS pipe of i level driver module.
8. like the said MOSFET drive circuit of claim 4; It is characterized in that: the control valve of N level driver module is controlled the gate source voltage of said N-channel MOS FET, and the control valve of i-1 level driver module comprises that a said control valve of control valve controls the gate source voltage of the following driven MOS pipe of i level driver module.
9. like any described MOSFET drive circuit of claim 1 to 8; It is characterized in that: said level switch module comprises control valve and level conversion pipe, the last driven MOS pipe of the control valve control first order driver module of said level switch module and/or the gate source voltage of following driven MOS pipe.
10. MOSFET drive circuit as claimed in claim 9 is characterized in that the control valve of said level switch module, the gate source voltage of level conversion metal-oxide-semiconductor in the control level modular converter.
11. a MOSFET drive circuit is characterized in that, comprising:
Level switch module, said level switch module are under the control of control signal, and the low-voltage signal that input is imported converts high-voltage signal into, and said high-voltage signal is through output output;
N level driver module, said N are the positive integer more than or equal to 1, and said first order driver module connects the output of level switch module, receive high-voltage signal, and driver modules at different levels are connected successively, the grid end of the output driving switch module of N level driver module; Each grade driver module comprises driven MOS pipe, following driven MOS pipe and control valve; First end of last driven MOS pipe connects power end; The first end ground connection of following driving tube; Connect control valve between second end of last driven MOS pipe and second end of following driven MOS pipe; The gate source voltage of the control valve control switch module of N level driver module, the control valve of i-1 level driver module are controlled the last driven MOS pipe of i level driver module and/or the gate source voltage of following driven MOS pipe, wherein any positive integer of 1＜=i＜N;
The clamper module, said clamper module is connected between power supply and the ground, and the output of clamper module connects the grid end of each control valve, for the gate source voltage of control valve clamper driving tube provides bias voltage;
Switch module, first control end of said switch module connects power supply, and second control end is as the output of MOSFET drive circuit, and the grid of said switch module connects the output of driver module;
Said level switch module comprises control valve and level conversion pipe, and the control valve of said level switch module is connected in the conducting branch road of level switch module, the last driven MOS pipe of control first order driver module and/or the gate source voltage of following driven MOS pipe;
The control valve of said level switch module, the also gate source voltage of level conversion metal-oxide-semiconductor in the control level modular converter.
The last driving tube of said driver module is the PMOS pipe; First end of last driven MOS pipe is the source end, and second end of last driven MOS pipe is a drain terminal, and the following driving tube of said driver module is the NMOS pipe; First end of following driving tube is the source end, and second end of following driven MOS pipe is a drain terminal.
12. like the said MOSFET drive circuit of claim 11, it is characterized in that: said switch module is the P channel mosfet, first control end of switch module is the source end, and second control end of switch module is a drain terminal.
13. like the said MOSFET drive circuit of claim 11, it is characterized in that: said switch module is N-channel MOS FET, first control end of switch module is a drain terminal, and second control end of switch module is the source end.
14. like the said MOSFET drive circuit of claim 12; It is characterized in that: the control valve of N level driver module is controlled the gate source voltage of said P channel mosfet; The control valve of i-1 level driver module comprises first control valve and second control valve; Said first control valve is controlled the gate source voltage of the last driven MOS pipe of i level driver module, and said second control valve is controlled the gate source voltage of the following driven MOS pipe of i level driver module.
15. like the said MOSFET drive circuit of claim 13; It is characterized in that: the control valve of N level driver module is controlled the gate source voltage of said N-channel MOS FET; The control valve of i-1 level driver module comprises first control valve and second control valve; Said first control valve is controlled the gate source voltage of the last driven MOS pipe of i level driver module, and said second control valve is controlled the gate source voltage of the following driven MOS pipe of i level driver module.
16. like the said MOSFET drive circuit of claim 12; It is characterized in that: the control valve of N level driver module is controlled the gate source voltage of said P channel mosfet, and the control valve of i-1 level driver module comprises that a said control valve of control valve controls the gate source voltage of the last driven MOS pipe of i level driver module.
17. like the said MOSFET drive circuit of claim 13; It is characterized in that: the control valve of N level driver module is controlled the gate source voltage of said N-channel MOS FET, and the control valve of i-1 level driver module comprises that a said control valve of control valve controls the gate source voltage of the following driven MOS pipe of i level driver module.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110460659.1A CN102510277B (en) | 2011-12-31 | 2011-12-31 | Metal oxide semiconductor field effect transistor (MOSFET) driving circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110460659.1A CN102510277B (en) | 2011-12-31 | 2011-12-31 | Metal oxide semiconductor field effect transistor (MOSFET) driving circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102510277A true CN102510277A (en) | 2012-06-20 |
| CN102510277B CN102510277B (en) | 2014-04-09 |
Family
ID=46222335
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110460659.1A Active CN102510277B (en) | 2011-12-31 | 2011-12-31 | Metal oxide semiconductor field effect transistor (MOSFET) driving circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102510277B (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104124957A (en) * | 2014-08-14 | 2014-10-29 | 灿芯半导体(上海)有限公司 | Level switching circuit |
| CN105978549A (en) * | 2015-03-11 | 2016-09-28 | 联发科技股份有限公司 | Apparatus for performing level shift control in an electronic device |
| CN106160717A (en) * | 2015-04-03 | 2016-11-23 | 飞思卡尔半导体公司 | Transmission gate circuit |
| CN107251433A (en) * | 2015-02-16 | 2017-10-13 | 三菱电机株式会社 | Semiconductor devices drive circuit |
| CN110855277A (en) * | 2019-12-02 | 2020-02-28 | 思瑞浦微电子科技（苏州）股份有限公司 | Adjustable clamping circuit |
| CN112394764A (en) * | 2019-08-16 | 2021-02-23 | 思睿逻辑国际半导体有限公司 | Voltage control |
| CN112615606A (en) * | 2020-12-24 | 2021-04-06 | 西安翔腾微电子科技有限公司 | LVPECL signal driving circuit realized by CMOS process |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11205123A (en) * | 1998-01-20 | 1999-07-30 | Toshiba Corp | High withstand voltage power integrated circuit |
| CN101222218A (en) * | 2007-01-12 | 2008-07-16 | 曹先国 | Differential pressure controllable switch |
| US20090315609A1 (en) * | 2008-06-19 | 2009-12-24 | Nec Electronics Corporaton | Level shift circuit and power semiconductor device |
| US20110181341A1 (en) * | 2009-11-25 | 2011-07-28 | Panasonic Corporation | Push-pull driver circuit |
| CN202374169U (en) * | 2011-12-31 | 2012-08-08 | 杭州士兰微电子股份有限公司 | Metal-oxide-semiconductor field-effect transistor (MOSFET) driving circuit |
-
2011
- 2011-12-31 CN CN201110460659.1A patent/CN102510277B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11205123A (en) * | 1998-01-20 | 1999-07-30 | Toshiba Corp | High withstand voltage power integrated circuit |
| CN101222218A (en) * | 2007-01-12 | 2008-07-16 | 曹先国 | Differential pressure controllable switch |
| US20090315609A1 (en) * | 2008-06-19 | 2009-12-24 | Nec Electronics Corporaton | Level shift circuit and power semiconductor device |
| US20110181341A1 (en) * | 2009-11-25 | 2011-07-28 | Panasonic Corporation | Push-pull driver circuit |
| CN202374169U (en) * | 2011-12-31 | 2012-08-08 | 杭州士兰微电子股份有限公司 | Metal-oxide-semiconductor field-effect transistor (MOSFET) driving circuit |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104124957A (en) * | 2014-08-14 | 2014-10-29 | 灿芯半导体(上海)有限公司 | Level switching circuit |
| CN104124957B (en) * | 2014-08-14 | 2017-02-15 | 灿芯半导体(上海)有限公司 | Level switching circuit |
| CN107251433A (en) * | 2015-02-16 | 2017-10-13 | 三菱电机株式会社 | Semiconductor devices drive circuit |
| CN107251433B (en) * | 2015-02-16 | 2020-10-30 | 三菱电机株式会社 | Semiconductor device drive circuit |
| CN105978549A (en) * | 2015-03-11 | 2016-09-28 | 联发科技股份有限公司 | Apparatus for performing level shift control in an electronic device |
| CN105978549B (en) * | 2015-03-11 | 2019-04-19 | 联发科技股份有限公司 | For carrying out the device of level conversion control in the electronic device |
| CN106160717A (en) * | 2015-04-03 | 2016-11-23 | 飞思卡尔半导体公司 | Transmission gate circuit |
| CN106160717B (en) * | 2015-04-03 | 2020-08-18 | 恩智浦美国有限公司 | Transmission gate circuit |
| CN112394764A (en) * | 2019-08-16 | 2021-02-23 | 思睿逻辑国际半导体有限公司 | Voltage control |
| US11522528B2 (en) | 2019-08-16 | 2022-12-06 | Cirrus Logic, Inc. | Voltage control |
| CN110855277A (en) * | 2019-12-02 | 2020-02-28 | 思瑞浦微电子科技（苏州）股份有限公司 | Adjustable clamping circuit |
| CN112615606A (en) * | 2020-12-24 | 2021-04-06 | 西安翔腾微电子科技有限公司 | LVPECL signal driving circuit realized by CMOS process |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102510277B (en) | 2014-04-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102510277B (en) | Metal oxide semiconductor field effect transistor (MOSFET) driving circuit | |
| CN108155903B (en) | High-speed high-voltage level conversion circuit applied to GaN grid drive | |
| CN103929172B (en) | Level shift circuit | |
| CN103856205B (en) | Level shifting circuit, for driving the drive circuit of high tension apparatus and corresponding method | |
| US8717086B2 (en) | Adaptive cascode circuit using MOS transistors | |
| CN102904565A (en) | Level shift circuit for DC-DC (Direct Current) driven ultra-low static current | |
| CN102893320B (en) | Level shift circuit | |
| CN101976940A (en) | Drive bootstrap circuit for switching tube of switching power supply converter | |
| CN101562449B (en) | High-speed current switch driver based on MOS current-mode logic | |
| CN107370485B (en) | Negative voltage level conversion circuit | |
| CN109672439A (en) | Pressure-resistant level shifting circuit | |
| CN202550865U (en) | Flyback synchronous rectification drive circuit suitable for power supply module | |
| CN202374169U (en) | Metal-oxide-semiconductor field-effect transistor (MOSFET) driving circuit | |
| CN105897252A (en) | Level shifter circuit applied to display device | |
| CN103023470B (en) | Three electrode one-way conduction field effect transistor | |
| CN205792206U (en) | A kind of novel high-pressure switch module based on the series connection of low tension switch device | |
| CN109391258B (en) | Level shift circuit based on low-voltage tube | |
| CN102522978A (en) | Isolation type power transistor driver | |
| CN203193605U (en) | A driving circuit used for driving a high-voltage device | |
| CN102545903B (en) | Digital to analog conversion switch circuit | |
| CN102568402B (en) | Level conversion enabling energy control circuit | |
| CN102006052A (en) | Power triode drive circuit and driving method | |
| CN110429800B (en) | Low-voltage-drop driver and implementation method | |
| CN108258905B (en) | Boost circuit and control method thereof | |
| CN208384971U (en) | A kind of voltage commutation circuit for lattice lcd driving chip |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |