CN102495506A - Electrophoretic display panel - Google Patents
Electrophoretic display panel Download PDFInfo
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- CN102495506A CN102495506A CN2011103963252A CN201110396325A CN102495506A CN 102495506 A CN102495506 A CN 102495506A CN 2011103963252 A CN2011103963252 A CN 2011103963252A CN 201110396325 A CN201110396325 A CN 201110396325A CN 102495506 A CN102495506 A CN 102495506A
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 58
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- 238000001962 electrophoresis Methods 0.000 claims abstract description 34
- 239000010409 thin film Substances 0.000 claims description 57
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- 238000009413 insulation Methods 0.000 claims description 35
- 239000007788 liquid Substances 0.000 claims description 33
- 239000002245 particle Substances 0.000 claims description 30
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 239000011733 molybdenum Substances 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 238000005260 corrosion Methods 0.000 abstract description 11
- 230000007797 corrosion Effects 0.000 abstract description 9
- 230000003647 oxidation Effects 0.000 abstract description 6
- 238000007254 oxidation reaction Methods 0.000 abstract description 6
- 239000004020 conductor Substances 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 183
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 44
- 239000000463 material Substances 0.000 description 38
- 239000011787 zinc oxide Substances 0.000 description 24
- 239000010408 film Substances 0.000 description 12
- 230000003628 erosive effect Effects 0.000 description 9
- 239000011521 glass Substances 0.000 description 9
- 238000000059 patterning Methods 0.000 description 9
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 8
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 8
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 8
- -1 ITO) Chemical compound 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 7
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- 239000003989 dielectric material Substances 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 229910006404 SnO 2 Inorganic materials 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 238000010276 construction Methods 0.000 description 4
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
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- 229910052738 indium Inorganic materials 0.000 description 4
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- 229910003437 indium oxide Inorganic materials 0.000 description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
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- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
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- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
Abstract
An electrophoretic display panel comprises an active element array substrate and an electrophoretic display film. The active element array substrate comprises a substrate, a first conductive pattern, a first dielectric layer, a second conductive pattern and a second dielectric layer. The first conductive pattern is disposed on the substrate. The first dielectric layer is arranged on the substrate to cover the first conductive pattern, and the first dielectric layer is provided with a contact window to expose partial area of the first conductive pattern. The second conductive pattern is configured on the first dielectric layer and is electrically connected with the first conductive pattern through the contact window. The second dielectric layer is configured on the first dielectric layer to cover the second conductive pattern. The electrophoretic display film is configured on the second dielectric layer. The invention can reduce the oxidation and metal corrosion phenomena caused by the contact with air or an adhesion layer in the active element array substrate by improving the bridging structure of the first conductor pattern and the second conductor pattern in the active element array substrate, thereby leading the electrophoresis display panel to have better corrosion resistance.
Description
Technical field
The invention relates to a kind of display panel, and particularly relevant for a kind of electrophoretic display panel (electrophoretic display panel, EPD).
Background technology
In recent years; Because various display techniques are constantly flourish; Through constantly research and development after; Like products such as electrophoretic display device (EPD), LCD, plasma display, organic light emitting diode display, little by little commercialization and be applied to various sizes and the display device of various areas.Universal day by day along with portable electronic product, flexible display (like Electronic Paper (e-paper), e-book (e-book) etc.) receives the concern in market gradually.Generally speaking, Electronic Paper (e-paper) and e-book (e-book) are to adopt electrophoretic display technology to reach the purpose of demonstration.E-book to show black and white is an example; Its sub-pixel mainly is to be made up of the black electrophoresis liquid and the white charged particles of mixing in the black electrophoresis liquid; Can drive white charged particles through the mode that applies voltage and move, so that each pixel shows the grey of black, white or different contrasts respectively.
In the prior art, electrophoretic display device (EPD) is to utilize reflecting of external light source to reach the purpose of demonstration mostly, and the white charged particles of mixing in electrophoresis liquid through driven can make each sub-pixel demonstrate required GTG.Generally speaking, the main framework of electrophoretic display device (EPD) is to be combined by a thin-film transistor array base-plate (TFT array substrate), an electrophoretic display thin film (EPD film) and a waterproof membrane (barrier film).Fig. 1 is the cut-away section synoptic diagram of convention electrophoretic display device (EPD).Please with reference to Fig. 1, electrophoretic display device (EPD) 100 comprises thin-film transistor array base-plate 110, electrophoretic display thin film 130 and adhesion layer 140, and wherein adhesion layer 140 is in order to bonding film transistor (TFT) array substrate 110 and electrophoretic display thin film 130.
In thin-film transistor array base-plate 110, the first metal layer 114, dielectric layer 116, second metal level 118, protective seam 120, flatness layer 122, the 3rd metal level 124 and transparency conducting layer 126 storehouse in regular turn are arranged on the substrate 112.For the first metal layer 114 and second metal level 118 are electrically connected; Convention electrophoresis-type thin-film transistor array base-plate is to expose the part the first metal layer 114 and second metal level 118 respectively through in dielectric layer 116, protective seam 120, flatness layer 122, forming a plurality of contact holes, and utilizes the 3rd metal level 124 and transparency conducting layer 126 to overlap the first metal layer 114 and second metal level 118 through above-mentioned contact hole.
Yet; As far as electrophoretic display device (EPD) technology; Before also not sticking the protection of electrophoretic display thin film 130 and waterproof membrane, being exposed to airborne thin-film transistor array base-plate 110 has harmful effects such as quite high probability generation plain conductor oxidation corrosion or film surface scratch.In addition; Under the situation of utilizing the 3rd metal level 124 and transparency conducting layer 126 to overlap; Owing to have only the layer of transparent of covering conductive layer 126 by laminated the 3rd metal level 124 tops that constitute of molybdenum/aluminium/molybdenum (Mo/Al/Mo); So the chemical substance in the adhesion layer 140 very easily with thin-film transistor array base-plate 110 in the 3rd metal level 124 carry out chemical reaction, therefore cause corrosion phenomenon.Thus, the metal erosion problem that thin-film transistor array base-plate 110 takes place can influence the element characteristic of thin film transistor (TFT), and then causes the display quality of electrophoretic display device (EPD) or reliability (reliability) not good.
Summary of the invention
The present invention provides a kind of electrophoretic display panel, has preferable resistance to corrosion.
The present invention proposes a kind of electrophoretic display panel, and it comprises active component array base board and electrophoretic display thin film.Active component array base board comprises substrate, first conductive pattern, first dielectric layer, second conductive pattern and second dielectric layer.First conductive pattern is disposed on the substrate.First dielectric layer is disposed on the substrate to cover first conductive pattern, and first dielectric layer has contact hole and exposes with the subregion with first conductive pattern.Second conductive pattern is disposed on first dielectric layer, and second conductive pattern electrically connects through the contact hole and first conductive pattern.Second dielectric layer is disposed on first dielectric layer to cover second conductive pattern.Electrophoretic display thin film is disposed on second dielectric layer.
In one embodiment of this invention, above-mentioned electrophoretic display thin film comprises conductive layer, insulation course and a plurality of electrophoretic display medium.Insulation course is disposed on the conductive layer, and wherein insulation course has a plurality of little cups (micro-cups) that are arrayed, and insulation course is between conductive layer and active component array base board.Electrophoretic display medium is disposed in little cup of insulation course.
In one embodiment of this invention, above-mentioned each electrophoretic display medium comprises electrophoresis liquid and a plurality of electrically charged particle, and wherein electrically charged particle is doped in the electrophoresis liquid.
In one embodiment of this invention, above-mentioned electrophoresis liquid is the black electrophoresis liquid, and electrically charged particle is white electrically charged particle.
In one embodiment of this invention, the second above-mentioned dielectric layer comprises protective seam and flatness layer.Protective seam is disposed on first dielectric layer to cover second conductive pattern.Flatness layer is disposed on the protective seam, and electrophoretic display thin film is disposed on the flatness layer.
The present invention proposes a kind of electrophoretic display panel in addition, and it comprises active component array base board and electrophoretic display thin film.Active component array base board comprises substrate, first conductive pattern, first dielectric layer, second conductive pattern, second dielectric layer, the 3rd conductive pattern, protective seam and the 4th conductive pattern.First conductive pattern is disposed on the substrate.First dielectric layer is disposed on the substrate to cover first conductive pattern, and first dielectric layer has first contact hole and exposes with the subregion with first conductive pattern.Second conductive pattern is disposed on first dielectric layer.Second dielectric layer is disposed on first dielectric layer to cover second conductive pattern, and second dielectric layer has second contact hole and the 3rd contact hole, and second contact hole exposes the subregion of second conductive pattern, and the 3rd contact hole is positioned at first contact hole top.The 3rd conductive pattern is disposed on second dielectric layer, and wherein the 3rd conductive pattern electrically connects through second contact hole and second conductive pattern, and the 3rd conductive pattern is through first contact hole and the 3rd contact hole and the electric connection of first conductive pattern.Protective seam is disposed on second dielectric layer to cover the 3rd conductive pattern.The 4th conductive pattern is disposed on the protective seam.Electrophoretic display thin film is disposed on second dielectric layer.
In one embodiment of this invention, above-mentioned electrophoretic display thin film comprises conductive layer, insulation course and a plurality of electrophoretic display medium.Insulation course is disposed on the conductive layer, and wherein insulation course has a plurality of little cups that are arrayed, and insulation course is between conductive layer and active component array base board.Electrophoretic display medium is disposed in little cup of insulation course.
In one embodiment of this invention, above-mentioned each electrophoretic display medium comprises electrophoresis liquid and a plurality of electrically charged particle, and wherein electrically charged particle is doped in the electrophoresis liquid.
In one embodiment of this invention, above-mentioned electrophoresis liquid is the black electrophoresis liquid, and electrically charged particle is white electrically charged particle.
In one embodiment of this invention, the second above-mentioned conductive pattern does not cover first contact hole.
The present invention proposes a kind of electrophoretic display panel again, and it comprises active component array base board and electrophoretic display thin film.Active component array base board comprises substrate, first conductive pattern, first dielectric layer, second conductive pattern, second dielectric layer and the 3rd conductive pattern.First conductive pattern is disposed on the substrate.First dielectric layer is disposed on the substrate to cover first conductive pattern, and first dielectric layer has first contact hole and exposes with the subregion with first conductive pattern.Second conductive pattern is disposed on first dielectric layer.Second dielectric layer is disposed on first dielectric layer to cover second conductive pattern, and second dielectric layer has second contact hole and the 3rd contact hole, and second contact hole exposes the subregion of second conductive pattern, and the 3rd contact hole is positioned at first contact hole top.The 3rd conductive pattern is disposed on second dielectric layer; The 3rd conductive pattern comprises the simple metal layer that is disposed on second dielectric layer and is disposed at the transparency conducting layer on the simple metal layer; Wherein the simple metal layer electrically connects through second contact hole and second conductive pattern, and the simple metal layer is through first contact hole and the 3rd contact hole and the electric connection of first conductive pattern.Electrophoretic display thin film is disposed on second dielectric layer.
In one embodiment of this invention, above-mentioned electrophoretic display thin film comprises conductive layer, insulation course and a plurality of electrophoretic display medium.Insulation course is disposed on the conductive layer, and wherein insulation course has a plurality of little cups that are arrayed, and insulation course is between conductive layer and active component array base board.Electrophoretic display medium is disposed in little cup of insulation course.
In one embodiment of this invention, above-mentioned each electrophoretic display medium comprises electrophoresis liquid and a plurality of electrically charged particle, and wherein electrically charged particle is doped in the electrophoresis liquid.
In one embodiment of this invention, above-mentioned electrophoresis liquid is the black electrophoresis liquid, and electrically charged particle is white electrically charged particle.
In one embodiment of this invention, the second above-mentioned dielectric layer comprises protective seam and flatness layer.Protective seam is disposed on first dielectric layer to cover second conductive pattern.Flatness layer is disposed on the protective seam, and electrophoretic display thin film is disposed on the flatness layer.
In one embodiment of this invention, the second above-mentioned conductive pattern does not cover first contact hole.
In one embodiment of this invention, above-mentioned simple metal layer comprises titanium layer or molybdenum layer.
Based on above-mentioned; In electrophoretic display panel of the present invention; Bridging structure through first conductive pattern and second conductive pattern in the improvement active component array base board; Can reduce in the active component array base board because of with air contacts or adhesion layer caused oxidation and metal erosion phenomenon, and then make electrophoretic display panel have preferable resistance to corrosion.
Describe the present invention below in conjunction with accompanying drawing and specific embodiment, but not as to qualification of the present invention.
Description of drawings
Fig. 1 is the cut-away section synoptic diagram of existing electrophoretic display device (EPD).
Fig. 2 is the diagrammatic cross-section according to the electrophoretic display panel of first embodiment of the invention.
Fig. 3 is the diagrammatic cross-section according to the electrophoretic display panel of second embodiment of the invention.
Fig. 4 is the diagrammatic cross-section according to the electrophoretic display panel of third embodiment of the invention.
Wherein, Reference numeral:
100: electrophoretic display device (EPD)
110: thin-film transistor array base-plate
112,212,312,412: substrate
114: the first metal layer
116: dielectric layer
118: the second metal levels
120,324, PV: protective seam
122, PL: flatness layer
124: the three metal levels
126,426: transparency conducting layer
130,230: electrophoretic display thin film
140,240: adhesion layer
200,300,400: electrophoretic display panel
210,310,410: active component array base board
214,314,414: the first conductive patterns
216,316,416: the first dielectric layers
216a: contact hole
218,318,418: the second conductive patterns
220,320,420: the second dielectric layers
232: conductive layer
234: insulation course
234a: little cup
236: electrophoretic display medium
236a: electrophoresis liquid
236b: electrically charged particle
316a, 416a: first contact hole
320a, 420a: second contact hole
320b, 420b: the 3rd contact hole
322,422: the three conductive patterns
326: the four conductive patterns
424: the simple metal layer
CH: channel layer
D: drain electrode
G: grid
GI: gate insulation layer
PE: pixel electrode
S: source electrode
T: active member
Embodiment
[first embodiment]
Fig. 2 is the diagrammatic cross-section according to the electrophoretic display panel of first embodiment of the invention.Please with reference to Fig. 2, the electrophoretic display panel 200 of present embodiment comprises active component array base board 210 and electrophoretic display thin film 230.Active component array base board 210 comprises substrate 212, first conductive pattern 214, first dielectric layer 216, second conductive pattern 218 and second dielectric layer 220.
First dielectric layer 216 is disposed on the substrate 212 has contact hole 216a with the subregion exposure with first conductive pattern 214 to cover first conductive pattern, 214, the first dielectric layers 216.The material of first dielectric layer 216 for example is dielectric materials such as silicon nitride, monox or silicon oxynitride.
Second conductive pattern 218 is disposed on first dielectric layer 216, and second conductive pattern 218 electrically connects through the contact hole 216a and first conductive pattern 214.The material of second conductive pattern 218 for example is a metal or alloy.
Particularly, active component array base board 210 also comprises a plurality of active member T and a plurality of pixel electrode PE.Active member T and pixel electrode PE are disposed on the substrate 212, and pixel electrode PE and active member T electric connection.Active member T for example is a thin film transistor (TFT).In one embodiment, active member T mainly is the gate insulation layer GI that comprises grid G, cover gate G, channel layer CH, source S and the drain D that is positioned at grid G I top, and wherein protective seam PV and flatness layer PL cover source S and drain D.Grid G and source S electrically connect with sweep trace (not illustrating) and data line (not illustrating) respectively, and pixel electrode PE electrically connects through opening and the drain D of protective seam PV and flatness layer PL.What specify is; In this embodiment; First conductive pattern 214 for example is to be formed by identical conductive film layer patterning with the grid G of active member T, and source S and the drain D of second conductive pattern 218 and active member T for example are to be formed by identical conductive film layer patterning.Pixel electrode PE can be single layer structure or sandwich construction; And its material for example be transparent material (as indium tin oxide (indium tin oxide, ITO), indium-zinc oxide (indium zinc oxide, IZO), aluminum zinc oxide (Al doped ZnO; AZO), indium gallium zinc oxide (Indium-Gallium-Zinc Oxide; IGZO), gallium-doped zinc oxide (Ga doped zinc oxide, GZO), zinc tin oxide (zinc-tin oxide, ZTO), indium oxide (In
2O
3), zinc paste (ZnO) or tin ash (SnO
2)), non-transparent material (like the alloy of gold, silver, copper, aluminium, molybdenum, titanium, tantalum, other suitable material, above-mentioned material, the nitride of above-mentioned material, the oxide of above-mentioned material, the oxides of nitrogen of above-mentioned material or the combination of above-mentioned material), or the combination of above-mentioned transparent material and non-transparent material.
Electrophoretic display thin film 230 is disposed on second dielectric layer 220.As shown in Figure 2, electrophoretic display thin film 230 for example is to be disposed on the flatness layer PL.Electrophoretic display thin film 230 comprises conductive layer 232, insulation course 234 and a plurality of electrophoretic display medium 236.The material of conductive layer 232 for example is a transparent conductive material; As indium tin oxide (indium tin oxide, ITO), indium-zinc oxide (indium zinc oxide, IZO), aluminum zinc oxide (Al doped ZnO; AZO), indium gallium zinc oxide (Indium-Gallium-Zinc Oxide; IGZO), gallium-doped zinc oxide (Ga doped zinc oxide, GZO), zinc tin oxide (zinc-tin oxide, ZTO), indium oxide (In
2O
3), zinc paste (ZnO) or tin ash (SnO
2) etc.
In one embodiment, electrophoretic display panel 200 more comprises adhesion layer 240, and it is disposed between active component array base board 210 and the electrophoretic display thin film 230, to engage active component array base board 210 and electrophoretic display thin film 230.The material of adhesion layer 240 for example is a polyacrylate.
Detailed speech, in this embodiment, adhesion layer 240 for example is to be attached between flatness layer PL and the electrophoretic display thin film 230, and active component array base board 210 and electrophoretic display thin film 230 are engaged with each other through adhesion layer 240.Thus; When and when overlapping first conductive pattern 214 and second conductive pattern 218 in order to meet demands such as feeler switch (test key), chip bonding area (IC-bonding area), electric static discharge protector (ESD protection device) or pixel indoor design; Second conductive pattern 218 capable of using electrically connects through the contact hole 216a and first conductive pattern 214 and forms directly overlap joint (direct contact) structure, therefore must be through existing outermost metal structure (the 3rd metal level 124 as shown in Figure 1) overlap joint first conductive pattern 214 and second conductive pattern 218.In addition, first conductive pattern 214 of present embodiment and second conductive pattern, the 218 common direct bridging arrangements that constitute receive the two-layer protection of top protective seam PV and flatness layer PL, can help significantly to strengthen electrophoretic display panel 200 erosion-resisting abilities.
[second embodiment]
Fig. 3 is the diagrammatic cross-section according to the electrophoretic display panel of second embodiment of the invention.It is noted that in Fig. 3, the member identical with Fig. 2 then uses identical label and omit its explanation.Please with reference to Fig. 3, electrophoretic display panel 300 comprises active component array base board 310 and electrophoretic display thin film 230.The electrophoretic display panel 300 of present embodiment and the main composition member of the electrophoretic display panel 200 among first embodiment are roughly similar, yet difference between the two mainly is the thin portion structure that is active component array base board 310.Active component array base board 310 comprises substrate 312, first conductive pattern 314, first dielectric layer 316, second conductive pattern 318, second dielectric layer 320, the 3rd conductive pattern 322, protective seam 324 and the 4th conductive pattern 326.
First dielectric layer 316 is disposed on the substrate 312 has the first contact hole 316a with the subregion exposure with first conductive pattern 314 to cover first conductive pattern, 314, the first dielectric layers 316.The material of first dielectric layer 316 for example is dielectric materials such as silicon nitride, monox or silicon oxynitride.
Second conductive pattern 318 is disposed on first dielectric layer 316.In one embodiment, second conductive pattern 318 does not cover the first contact hole 316a.The material of second conductive pattern 318 for example is a metal or alloy.
The 3rd conductive pattern 322 is disposed on second dielectric layer 320; Wherein the 3rd conductive pattern 322 electrically connects through the second contact hole 320a and second conductive pattern 318, and the 3rd conductive pattern 322 is through the first contact hole 316a and the 3rd contact hole 320b and 314 electric connections of first conductive pattern.The material of the 3rd conductive pattern 322 for example is a metal or alloy.
The 4th conductive pattern 326 is disposed on the protective seam 324.The material of the 4th conductive pattern 326 can be a transparent conductive material; As indium tin oxide (indium tin oxide, ITO), indium-zinc oxide (indium zinc oxide, IZO), aluminum zinc oxide (Al doped ZnO; AZO), indium gallium zinc oxide (Indium-Gallium-Zinc Oxide; IGZO), gallium-doped zinc oxide (Ga doped zinc oxide, GZO), zinc tin oxide (zinc-tin oxide, ZTO), indium oxide (In
2O
3), zinc paste (ZnO) or tin ash (SnO
2) etc.
Active component array base board 310 also comprises a plurality of active member T and a plurality of pixel electrode PE.In this embodiment; First conductive pattern 314 for example is to be formed by identical conductive film layer patterning with the grid G of active member T; And source S and the drain D of second conductive pattern 318 and active member T for example are to be formed by identical conductive film layer patterning, and the 4th conductive pattern 326 for example is to be formed by identical conductive film layer patterning with pixel electrode PE.
Electrophoretic display thin film 230 is disposed on second dielectric layer 320.As shown in Figure 3, electrophoretic display thin film 230 for example is to be disposed on the 4th conductive pattern 326.In this embodiment, adhesion layer 240 for example is to be attached between the 4th conductive pattern 326 and the electrophoretic display thin film 230, and active component array base board 310 and electrophoretic display thin film 230 are engaged with each other through adhesion layer 240.What deserves to be mentioned is that the adhesion layer 240 of present embodiment does not directly contact with the 3rd conductive pattern 322.In other words, between adhesion layer 240 and the 3rd conductive pattern 322 across protective seam 324.The 3rd conductive pattern 322 through being arranged at protective seam 324 belows electrically connects first conductive pattern 314 and second conductive pattern 318; So kind can be utilized further protection the 3rd conductive patterns 322 of protective seam 324 by the mode that the 3rd conductive pattern 322 forms inside lap, and reduces the chance that the 3rd conductive pattern 322 is corroded.
[the 3rd embodiment]
Fig. 4 is the diagrammatic cross-section according to the electrophoretic display panel of third embodiment of the invention.It is noted that in Fig. 4, the member identical with Fig. 2 then uses identical label and omit its explanation.Please with reference to Fig. 4, electrophoretic display panel 400 comprises active component array base board 410 and electrophoretic display thin film 230.The electrophoretic display panel 400 of present embodiment and the main composition member of the electrophoretic display panel 200 among first embodiment are roughly similar, yet difference between the two mainly is the thin portion structure that is active component array base board 410.Active component array base board 410 comprises substrate 412, first conductive pattern 414, first dielectric layer 416, second conductive pattern 418, second dielectric layer 420 and the 3rd conductive pattern 422.
First dielectric layer 416 is disposed on the substrate 412 has the first contact hole 416a with the subregion exposure with first conductive pattern 414 to cover first conductive pattern, 414, the first dielectric layers 416.The material of first dielectric layer 416 for example is dielectric materials such as silicon nitride, monox or silicon oxynitride.
Second conductive pattern 418 is disposed on first dielectric layer 416.In one embodiment, second conductive pattern 418 does not cover the first contact hole 416a.The material of second conductive pattern 418 for example is a metal or alloy.
The 3rd conductive pattern 422 is disposed on second dielectric layer 420; The 3rd conductive pattern 422 comprises and is disposed at the simple metal layer 424 on second dielectric layer 420 and is disposed at the transparency conducting layer 426 on the simple metal layer 424; Wherein simple metal layer 424 electrically connects through the second contact hole 420a and second conductive pattern 418, and simple metal layer 424 is through the first contact hole 416a and the 3rd contact hole 420b and 414 electric connections of first conductive pattern.Simple metal layer 424 for example is titanium layer or molybdenum layer, or the layer of selecting for use other anti-oxidation metal to constitute.The material of transparency conducting layer 426 for example is indium tin oxide (indium tin oxide; ITO), indium-zinc oxide (indium zinc oxide; IZO), aluminum zinc oxide (Al doped ZnO, AZO), indium gallium zinc oxide (Indium-Gallium-Zinc Oxide, IGZO), gallium-doped zinc oxide (Ga doped zinc oxide; GZO), zinc tin oxide (zinc-tin oxide, ZTO), indium oxide (In
2O
3), zinc paste (ZnO) or tin ash (SnO
2) etc.
Active component array base board 410 also comprises a plurality of active member T and a plurality of pixel electrode PE.In this embodiment; First conductive pattern 414 for example is to be formed by identical conductive film layer patterning with the grid G of active member T; And source S and the drain D of second conductive pattern 418 and active member T for example are to be formed by identical conductive film layer patterning, and the transparency conducting layer 426 in the 3rd conductive pattern 422 for example is to be formed by identical conductive film layer patterning with pixel electrode PE.
Electrophoretic display thin film 230 is disposed on the flatness layer PL of second dielectric layer 420.As shown in Figure 4, electrophoretic display thin film 230 for example is to be disposed on the transparency conducting layer 426 of the 3rd conductive pattern 422.In this embodiment, adhesion layer 240 for example is to be attached between the 3rd conductive pattern 422 and the electrophoretic display thin film 230, and active component array base board 410 and electrophoretic display thin film 230 are engaged with each other through adhesion layer 240.What deserves to be mentioned is that even only dispose transparency conducting layer 426 between adhesion layer 240 and the simple metal layer 424, but the simple metal layer 424 of present embodiment has oxidation resistance, the situation that therefore can reduce adhesion layer 240 corrosion simple metal layers 424 takes place.In addition, this kind comprises that the 3rd conductive pattern 422 structures of simple metal layer 424 can be applicable to various active component array base boards.
In this explanation is that though be to be that example describes so that simple metal layer 424 is disposed on the flatness layer PL in the 3rd embodiment, the present invention is not limited to this.According to other embodiment, the present invention also can change to simple metal material (like titanium or molybdenum) with the 3rd conductive pattern 322 materials that are positioned at protective seam 324 belows among second embodiment, and advances an anti-corrosion effects that promotes the electrophoretic display panel 300 of second embodiment.
For the electrophoretic display panel that confirms the above embodiment of the present invention has excellent resistance to corrosion really, next will utilize several electrophoretic display panels of existing electrophoretic display device (EPD) and the foregoing description to come to explain respectively its anti-corrosion effects for example.Following table 1 list respectively according to existing electrophoretic display device (EPD) 100 shown in Figure 1 and Fig. 2 to time that metal erosion appears in electrophoretic display panel 200,300,400 shown in Figure 4 to judge erosion-resisting effect.
Table 1
| Metal erosion appears | |
| Existing electrophoretic display device (EPD) 100 | 40 hours |
| |
Above 500 hours |
| |
Above 500 hours |
| |
Above 168 hours |
Result by above-mentioned table 1 can know: existing electrophoretic display device (EPD) 100 as shown in Figure 1 the phenomenon of metal erosion will occur in 40 hours under the condition of the hot and humid picture ongoing operation of 40 ℃ of RA and relative humidity 90% (RA 40/90); Electrophoretic display panel 200 as shown in Figure 2 is under the condition of the hot and humid picture ongoing operation of 40 ℃ of RA and relative humidity 90%, even through also being difficult to observe the phenomenon of metal erosion after 500 hours; Electrophoretic display panel 300 as shown in Figure 3 is under the condition of the hot and humid picture ongoing operation of 40 ℃ of RA and relative humidity 90%, even through also being difficult to observe the phenomenon of metal erosion after 500 hours; Electrophoretic display panel 400 as shown in Figure 4 is under the condition of the hot and humid picture ongoing operation of 40 ℃ of RA and relative humidity 90%, even through also being difficult to observe the phenomenon of metal erosion after 168 hours.In other words, compared to existing electrophoretic display device (EPD) 100, the electrophoretic display panel 200,300,400 among the present invention first to the 3rd embodiment all has better resistance to corrosion.
In this explanation is though that suitable at the distribution area of the distribution area of Fig. 2 little glass of 234a to the embodiment shown in Figure 4 and pixel electrode PE, present embodiment does not limit the distribution area of little glass of 234a and active member.In other feasible embodiment, the distribution area of little glass of 234a can be suitable with the distribution area of a plurality of pixel electrode PE.In addition, be that to have Fig. 2 with electrophoretic display thin film 230 be example to structure shown in Figure 4 in above-mentioned, but electrophoretic display thin film 230 can also be other structure.In other words; The present invention does not limit the electrophoretic display thin film 230 in the electrophoretic display panel 200,300,400; Electrophoretic display thin film 230 can be any electrophoretic display thin film that is applicable to electrophoretic display panel; Has common knowledge the knowledgeable when knowing its variation and application, so repeat no more in this technical field in this by previous embodiment.
In sum; In electrophoretic display panel of the present invention; Through making conductive pattern receive the protection of top protective seam and/or flatness layer; Or select design such as oxidation resistant simple metal layer for use, and make first conductive pattern and the second conductive pattern bridge joint, therefore can reduce in the active component array base board because of with air contacts or adhesion layer caused oxidation and metal erosion phenomenon.Thus, active component array base board can have preferable element characteristic, and then can improve the display quality or the reliability of electrophoretic display device (EPD).In addition, first conductive pattern of active component array base board and the second conductive pattern overlapping mode can be integrated in existing technology in the electrophoretic display panel of the present invention, but and widespread use to various electrophoretic display panels.
Certainly; The present invention also can have other various embodiments; Under the situation that does not deviate from spirit of the present invention and essence thereof; Those of ordinary skill in the art can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection domain of claim of the present invention.
Claims (17)
1. an electrophoretic display panel is characterized in that, comprising:
One active component array base board comprises:
One substrate;
One first conductive pattern is disposed on this substrate;
One first dielectric layer is disposed on this substrate to cover this first conductive pattern, and this first dielectric layer has a contact hole and exposes with the subregion with this first conductive pattern;
One second conductive pattern is disposed on this first dielectric layer, and this second conductive pattern electrically connects through this contact hole and this first conductive pattern; And
One second dielectric layer is disposed on this first dielectric layer to cover this second conductive pattern;
And
One electrophoretic display thin film is disposed on this second dielectric layer.
2. electrophoretic display panel according to claim 1 is characterized in that, this electrophoretic display thin film comprises:
One conductive layer;
One insulation course is disposed on this conductive layer, and wherein this insulation course has a plurality of little cups that are arrayed, and this insulation course is between this conductive layer and this active component array base board; And
A plurality of electrophoretic display mediums, this that is disposed at this insulation course are slightly in the cup.
3. electrophoretic display panel according to claim 2 is characterized in that, respectively this electrophoretic display medium comprises:
One electrophoresis liquid; And
A plurality of electrically charged particles are doped in this electrophoresis liquid.
4. electrophoretic display panel according to claim 3 is characterized in that, this electrophoresis liquid is a black electrophoresis liquid, and those electrically charged particles are white electrically charged particle.
5. electrophoretic display panel according to claim 1 is characterized in that, this second dielectric layer comprises:
One protective seam is disposed on this first dielectric layer to cover this second conductive pattern; And
One flatness layer is disposed on this protective seam, and this electrophoretic display thin film is disposed on this flatness layer.
6. an electrophoretic display panel is characterized in that, comprising:
One active component array base board comprises:
One substrate;
One first conductive pattern is disposed on this substrate;
One first dielectric layer is disposed on this substrate to cover this first conductive pattern, and this first dielectric layer has one first contact hole and exposes with the subregion with this first conductive pattern;
One second conductive pattern is disposed on this first dielectric layer;
One second dielectric layer; Be disposed on this first dielectric layer to cover this second conductive pattern; This second dielectric layer has one second contact hole and one the 3rd contact hole, and this second contact hole exposes the subregion of this second conductive pattern, and the 3rd contact hole is positioned at this first contact hole top;
One the 3rd conductive pattern; Be disposed on this second dielectric layer; Wherein the 3rd conductive pattern electrically connects through this second contact hole and this second conductive pattern, and the 3rd conductive pattern is through this first contact hole and the 3rd contact hole and the electric connection of this first conductive pattern;
One protective seam is disposed on this second dielectric layer to cover the 3rd conductive pattern; And
One the 4th conductive pattern is disposed on this protective seam; And
One electrophoretic display thin film is disposed on this second dielectric layer.
7. electrophoretic display panel according to claim 6 is characterized in that, this electrophoretic display thin film comprises:
One conductive layer;
One insulation course is disposed on this conductive layer, and wherein this insulation course has a plurality of little cups that are arrayed, and this insulation course is between this conductive layer and this active component array base board; And
A plurality of electrophoretic display mediums, this that is disposed at this insulation course are slightly in the cup.
8. electrophoretic display panel according to claim 7 is characterized in that, respectively this electrophoretic display medium comprises:
One electrophoresis liquid; And
A plurality of electrically charged particles are doped in this electrophoresis liquid.
9. electrophoretic display panel according to claim 8 is characterized in that, this electrophoresis liquid is a black electrophoresis liquid, and those electrically charged particles are white electrically charged particle.
10. electrophoretic display panel according to claim 6 is characterized in that, this second conductive pattern does not cover this first contact hole.
11. an electrophoretic display panel comprises:
One active component array base board comprises:
One substrate;
One first conductive pattern is disposed on this substrate;
One first dielectric layer is disposed on this substrate to cover this first conductive pattern, and this first dielectric layer has one first contact hole and exposes with the subregion with this first conductive pattern;
One second conductive pattern is disposed on this first dielectric layer;
One second dielectric layer; Be disposed on this first dielectric layer to cover this second conductive pattern; This second dielectric layer has one second contact hole and one the 3rd contact hole, and this second contact hole exposes the subregion of this second conductive pattern, and the 3rd contact hole is positioned at this first contact hole top; And
One the 3rd conductive pattern; Be disposed on this second dielectric layer; The 3rd conductive pattern comprises that the simple metal layer and that is disposed on this second dielectric layer is disposed at the transparency conducting layer on this simple metal layer; Wherein this simple metal layer electrically connects through this second contact hole and this second conductive pattern, and this simple metal layer is through this first contact hole and the 3rd contact hole and the electric connection of this first conductive pattern; And
One electrophoretic display thin film is disposed on this second dielectric layer.
12. electrophoretic display panel according to claim 11 is characterized in that, this electrophoretic display thin film comprises:
One conductive layer;
One insulation course is disposed on this conductive layer, and wherein this insulation course has a plurality of little cups that are arrayed, and this insulation course is between this conductive layer and this active component array base board; And
A plurality of electrophoretic display mediums, this that is disposed at this insulation course are slightly in the cup.
13. electrophoretic display panel according to claim 12 is characterized in that, respectively this electrophoretic display medium comprises:
One electrophoresis liquid; And
A plurality of electrically charged particles are doped in this electrophoresis liquid.
14. electrophoretic display panel according to claim 13 is characterized in that, this electrophoresis liquid is a black electrophoresis liquid, and those electrically charged particles are white electrically charged particle.
15. electrophoretic display panel according to claim 11 is characterized in that, this second dielectric layer comprises:
One protective seam is disposed on this first dielectric layer to cover this second conductive pattern; And
One flatness layer is disposed on this protective seam, and this electrophoretic display thin film is disposed on this flatness layer.
16. electrophoretic display panel according to claim 11 is characterized in that, this second conductive pattern does not cover this first contact hole.
17. electrophoretic display panel according to claim 11 is characterized in that, this simple metal layer comprises titanium layer or molybdenum layer.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100124262 | 2011-07-08 | ||
| TW100124262A TWI444742B (en) | 2011-07-08 | 2011-07-08 | Electrophoretic display panel |
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| Publication Number | Publication Date |
|---|---|
| CN102495506A true CN102495506A (en) | 2012-06-13 |
| CN102495506B CN102495506B (en) | 2014-07-09 |
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ID=46187342
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110396325.2A Active CN102495506B (en) | 2011-07-08 | 2011-11-29 | Electrophoretic display panel |
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| Country | Link |
|---|---|
| CN (1) | CN102495506B (en) |
| TW (1) | TWI444742B (en) |
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| CN104635397A (en) * | 2013-11-12 | 2015-05-20 | 元太科技工业股份有限公司 | Active element array substrate |
| CN111856832A (en) * | 2019-04-23 | 2020-10-30 | 元太科技工业股份有限公司 | Reflective active element array substrate, manufacturing method thereof and reflective display device |
| US11921395B2 (en) | 2019-04-23 | 2024-03-05 | E Ink Holdings Inc. | Reflective active device array substrate and manufacturing method thereof and reflective display apparatus and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103969907B (en) | 2013-02-05 | 2017-07-14 | 辉达公司 | Display panel and the Flat electronic equipment with it |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN102495506B (en) | 2014-07-09 |
| TW201303462A (en) | 2013-01-16 |
| TWI444742B (en) | 2014-07-11 |
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Effective date of registration: 20151013 Address after: Taiwan, China Hsinchu science and Technology Park Road, No. 3 Patentee after: Yuantai Science and Technology Industry Co., Ltd. Address before: Taiwan, China Hsinchu science and Technology Industrial Park, Hsinchu Road, No. two, No. 1 Patentee before: AU Optronics Corporation |