CN1975547A - Electronic ink displaying device - Google Patents
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- CN1975547A CN1975547A CN 200510124092 CN200510124092A CN1975547A CN 1975547 A CN1975547 A CN 1975547A CN 200510124092 CN200510124092 CN 200510124092 CN 200510124092 A CN200510124092 A CN 200510124092A CN 1975547 A CN1975547 A CN 1975547A
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Abstract
A kind of electron ink display device, which includes the front board and the film transistor array base board. In film transistor array base board, the first metal layer and the dielectric layer are set in the first bases, the dielectric layer covers the first metal layer, the second metal layer is set in the dielectric layer. The first metal layer includes many scanning wiring and many grid electrode, the second metal layer includes many data wiring and source extreme/drain, the data wiring and the scanning wiring divides much pixel area on the first base board, the grid electrode and the source extreme/drain are set in each pixel area. The channel layer is set in the dielectric layer between the grid electrode and the source extreme/drain, and multi-pixel electrodes are set in pixel area and were electrical connected with the drain. Besides, the electron ink material layer of the front hard is set between the transparent electrode and the film transistor array base board. The technology step required in producing process of the film transistor array base board of electron ink display device is less; it can save production time and reduce production cost.
Description
Technical field
The present invention relates to a kind of display device, and be particularly related to a kind of electronic ink display device.
Background technology
The electronic ink display device initial development is in the 1970's, and its characteristic is to comprise charged bead, and wherein the one side of ball is a white, and another side is a black, and when electric field changed, club rotated up and down, and presented different colours.The electronic ink display device of the second generation is to be developed in generation nineteen ninety, and its characteristic is to replace traditional bead with microcapsules, and in capsule the oil (oil) and charged white particle of filling color.Control by external electric field makes white particle up or move down, wherein when white particle up (near reader's direction time) then demonstrate white, when white particle down time the (away from reader's direction time) then shows fuel-displaced color.
Generally speaking, at present common electronic ink display device comprise front panel (frontplanelaminate, FPL) and thin-film transistor array base-plate.Front panel has transparent electrode layer and electronic ink material layer.Have a plurality of microcapsules (being electric ink) in the electronic ink material layer, and each microcapsules comprises black and two kinds of pigment of white and transparent fluid.When each pixel electrode of thin-film transistor array base-plate and the electric field between the transparent electrode layer changed, pigment just can move up or down according to direction of an electric field, and then makes each pixel present black or white.
Fig. 1 is the partial sectional view of the thin-film transistor array base-plate of known electronic ink display device.Please refer to Fig. 1, the manufacture method of the thin-film transistor array base-plate 100 of known electronic ink display device is to form earlier indium tin oxide (indium tin oxide on substrate 110, ITO) layer 120, on indium tin oxide layer 120, form a plurality of source/drains 132/134 (only representing 1 among Fig. 1) afterwards, and on source/drain 132/134, form ohmic contact layer 140.Then, with the oxide on the etching solution removing substrate 110, and form channel layer 150 that covers ohmic contact layer 140 and the dielectric layer 160 that covers channel layer 150.Then, on dielectric layer 160, form a plurality of grids 170 (only representing 1 among Fig. 1), and form protective seam 180 cover gate 170.Then, form resin bed 190 with covered substrate 110, and form electrode layer 195 on resin bed 190, wherein electrode layer 195 is to be electrically connected with indium tin oxide layer 120 by the opening in the resin bed 190 192.
It should be noted that, because the relation on the structural design of thin-film transistor array base-plate 100, make that the technology of thin-film transistor array base-plate 100 is comparatively complicated and time-consuming, therefore production cost also improves, and so will increase the production cost of whole electronic ink display device.
Summary of the invention
The purpose of this invention is to provide a kind of electronic ink display device, to reduce production costs.
For reaching above-mentioned or other purpose, the present invention proposes a kind of electronic ink display device, the front panel that it comprises thin-film transistor array base-plate and is arranged at a side of this thin-film transistor array base-plate.Wherein, thin-film transistor array base-plate comprises first substrate, the first metal layer, dielectric layer, second metal level, channel layer and a plurality of pixel electrode.The first metal layer and dielectric layer are to be arranged on first substrate, and dielectric layer covering the first metal layer, and second metal level is to be arranged on the dielectric layer.A plurality of grids that the first metal layer comprises plurality of scanning wirings and is electrically connected with scan wiring.Second metal level comprises many data wirings and a plurality of source/drain, and wherein data wiring and scan wiring mark off a plurality of pixel regions on first substrate, and grid and source/drain are to be arranged in each pixel region.Source electrode is to be electrically connected to data wiring, and source/drain and grid in each pixel region overlap.In addition, channel layer is on the dielectric layer that is arranged between grid and the source/drain, and pixel electrode is to be arranged in the pixel region, and is electrically connected with drain electrode.In addition, front panel comprises second substrate, is arranged at the transparent electrode layer on second substrate, and is arranged at the electronic ink material layer between transparent electrode layer and the thin-film transistor array base-plate.
In one embodiment of this invention, above-mentioned thin-film transistor array base-plate also comprises flatness layer, covers first substrate and between second metal level and pixel electrode.
In one embodiment of this invention, above-mentioned flatness layer has a plurality of first openings, exposes the subregion of drain electrode, so that pixel electrode is electrically connected with drain electrode by first opening.
In one embodiment of this invention, the material of above-mentioned flatness layer comprises resin.
In one embodiment of this invention, above-mentioned thin-film transistor array base-plate also comprises protective seam, is arranged between second metal level and the flatness layer.
In one embodiment of this invention, above-mentioned protective seam has a plurality of second openings, expose the subregion of drain electrode, and flatness layer has a plurality of first openings, exposes second opening, and pixel electrode is to be electrically connected with drain electrode by first opening and second opening.
In one embodiment of this invention, above-mentioned thin-film transistor array base-plate also comprises ohmic contact layer, is arranged between channel layer and the source/drain.
In one embodiment of this invention, above-mentioned the first metal layer also comprises many shared distributions, is parallel to scan wiring in fact, and is provided with shared distribution between adjacent two scan wirings.
In one embodiment of this invention, above-mentioned second metal level also comprises a plurality of patterns of floating, and is arranged between the source electrode and drain electrode in each pixel region.Be provided with two grids in each pixel region, respectively with source electrode and drain electrode in one of overlap, and float pattern and grid in each pixel region overlap.
In one embodiment of this invention, above-mentioned the first metal layer also comprises the first perimeter circuit pattern, and second metal level also comprises the second perimeter circuit pattern, overlaps with the first perimeter circuit pattern.Dielectric layer has a plurality of the 3rd openings, so that the second perimeter circuit pattern is electrically connected to the first perimeter circuit pattern by the 3rd opening.
In one embodiment of this invention, above-mentioned the first metal layer also comprises the first perimeter circuit pattern, and second metal level also comprises the second perimeter circuit pattern, and thin-film transistor array base-plate also comprises electrode layer, is electrically connected between the first perimeter circuit pattern and the second perimeter circuit pattern.
In one embodiment of this invention, above-mentioned electrode layer and pixel electrode are to belong to same rete.
In one embodiment of this invention, the material of pixel electrodes is electrically conducting transparent material or metal material.
Compare with known technology, in electronic ink display device of the present invention, because of the manufacturing process of thin-film transistor array base-plate is comparatively simple, thus can save the production cost of thin-film transistor array base-plate, and then reduce the production cost of electronic ink display device.
For above and other objects of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Fig. 1 is the partial sectional view of the thin-film transistor array base-plate of known electronic ink display device.
Fig. 2 is the structural representation of a kind of electronic ink display device of one embodiment of the invention.
Fig. 3 is the vertical view of the single pixel of thin-film transistor array base-plate among Fig. 2.
Fig. 4 is the cut-open view along I-I ' line among Fig. 3.
Fig. 5 A is a kind of partial top view of perimeter circuit of the thin-film transistor array base-plate of Fig. 3.
Fig. 5 B is the cut-open view along II-II ' line among Fig. 5 A.
Fig. 6 A is the partial top view of another kind of perimeter circuit of the thin-film transistor array base-plate of Fig. 3.
Fig. 6 B is the cut-open view along III-III ' line among Fig. 6 A.
Fig. 7 is the partial sectional view of the thin-film transistor array base-plate of another embodiment of the present invention.
Fig. 8 is the vertical view of single pixel of the thin-film transistor array base-plate of further embodiment of this invention.
Fig. 9 A and Fig. 9 B are the vertical views of single pixel of two kinds of thin-film transistor array base-plates of yet another embodiment of the invention.
The main element description of symbols
100,200,200a～200d: thin-film transistor array base-plate
110: substrate
120: indium tin oxide layer
132,244: source electrode
134,246: drain electrode
140,270: ohmic contact layer
150,250: channel layer
160,230: dielectric layer
170,224: grid
180,290: protective seam
190: resin bed
192: opening
195,262: electrode layer
210: the first substrates
212: pixel region
220: the first metal layer
222: scan wiring
226: the first perimeter circuit patterns
228: shared distribution
232: the three openings
234: the four openings
240: the second metal levels
242: data wiring
248: the second perimeter circuit patterns
249: the pattern of floating
252: cushion block
260: pixel electrode
280: flatness layer
282: the first openings
284: the five openings
286: the six openings
292: the second openings
300: front panel
310: the second substrates
320: transparent electrode layer
330: electronic ink material layer
332: microcapsules
400: electronic ink display device
Embodiment
Fig. 2 is the structural representation of a kind of electronic ink display device of one embodiment of the invention, and Fig. 3 is the vertical view of the single pixel of thin-film transistor array base-plate among Fig. 2, and Fig. 4 is the cut-open view along I-I ' line among Fig. 3.Please refer to Fig. 2 to Fig. 4, the front panel 300 that the electronic ink display device 400 of present embodiment comprises thin-film transistor array base-plate 200 and is arranged at a side of this thin-film transistor array base-plate 200.Wherein, thin-film transistor array base-plate 200 comprises first substrate 210, the first metal layer 220, dielectric layer 230, second metal level 240, channel layer 250 and a plurality of pixel electrode 260.The first metal layer 220 is to be arranged on first substrate 210 with dielectric layer 230, and dielectric layer 230 covering the first metal layers 220, and second metal level 240 is to be arranged on the dielectric layer 230.The first metal layer 220 comprises plurality of scanning wirings 222 and a plurality of grids 224 that are electrically connected with scan wiring 222.Second metal level 240 comprises many data wirings 242 and a plurality of source/drain 244/246, wherein data wiring 242 marks off a plurality of pixel regions 212 with scan wiring 222 on first substrate 210, and grid 224 is to be arranged in each pixel region 212 with source/drain 244/246.Source electrode 244 is to be electrically connected to data wiring 242, and the source/drain 244/246 in each pixel region 212 overlaps with grid 224.In addition, channel layer 250 is on the dielectric layer 230 that is arranged between grid 224 and the source/drain 244/246, and pixel electrode 260 is to be arranged in the pixel region 212, and is electrically connected with drain electrode 246.
From the above, front panel 300 comprises second substrate 310, is arranged at the transparent electrode layer 320 on second substrate 310, and is arranged at the electronic ink material layer 330 between transparent electrode layer 320 and the thin-film transistor array base-plate 200.Wherein, the material of transparent electrode layer 320 for example be indium tin oxide, indium-zinc oxide (indium zinc oxide, IZO) or other electrically conducting transparent material.Have a plurality of microcapsules 332 in the electronic ink material layer 330, and for example include black and two kinds of pigment of white and transparent fluid in each microcapsules 332.In addition, change, pigment is moved up or down according to direction of an electric field, and then make each pixel of electronic ink display device present black or white by the direction of an electric field between each pixel electrode 260 and the transparent electrode layer 320.
Above-mentioned thin-film transistor array base-plate 200 also comprises a plurality of cushion blocks 252, is arranged between scan wiring 222 and the data wiring 242 and 246 belows that drain.These cushion blocks 252 are to belong to same rete with channel layer 250, and its material for example is amorphous silicon (amorphous silicon).In addition, for example be provided with ohmic contact layer 270 between channel layer 250 and the source/drain 244/246.The material of this ohmic contact layer 270 for example is a n type doped amorphous silicon.In addition, the material of pixel electrode 260 for example is electrically conducting transparent material or metal material, and wherein the electrically conducting transparent material can be indium tin oxide or indium-zinc oxide.
Thin-film transistor array base-plate 200 also comprises flatness layer 280, covers first substrate 210 and between second metal level 240 and pixel electrode 260.Flatness layer 280 for example has a plurality of first openings 282, lays respectively in each pixel region 212, and exposing the subregion of the drain electrode 246 in each pixel region 212, and each pixel electrode 260 is to be electrically connected with each drain electrode 246 by these first openings 282.In addition, the material of flatness layer 280 comprises resin.Particularly, the material of flatness layer 280 can be AZ501.
The manufacture method of the thin-film transistor array base-plate 200 of present embodiment for example is the dielectric layer 230 that forms the first metal layer 220 and cover the first metal layer 220 on substrate 210 earlier, forms channel layer 250 and Ohmic contact material layers afterwards again on dielectric layer 230.Then, on first substrate 210, form second metal level 240, and patterning Ohmic contact material layers is to form ohmic contact layer 270.Then, form the flatness layer 280 that covers first substrate 210, and on flatness layer 280, form pixel electrode 260.
Compare with the manufacture method of known thin-film transistor array base-plate 100 (as shown in Figure 1), the required during fabrication processing step of the thin-film transistor array base-plate 200 of present embodiment is less, so can reduce the production time and reduce production costs, and then lower the production cost of whole electronic ink display device 400.Therefore, the electronic ink display device 400 of present embodiment is more competitive on price.
Fig. 5 A is a kind of partial top view of perimeter circuit of the thin-film transistor array base-plate of Fig. 3, and Fig. 5 B is the cut-open view along II-II ' line among Fig. 5 A.Please refer to Fig. 5 A and Fig. 5 B, in Fig. 5 A, the first metal layer 220 also comprises the first perimeter circuit pattern 226, and second metal level 240 also comprises the second perimeter circuit pattern 248, and itself and the first perimeter circuit pattern 226 overlap.This first perimeter circuit pattern 226 and the second perimeter circuit pattern 248 for example are the circuits that electrostatic discharge protective circuit or be used for is connected with chip.In addition, dielectric layer 230 has a plurality of the 3rd openings 232, so that the second perimeter circuit pattern 248 is electrically connected to the first perimeter circuit pattern 226 by the 3rd opening 232.
Fig. 6 A is the partial top view of another kind of perimeter circuit of the thin-film transistor array base-plate of Fig. 3, and Fig. 6 B is the cut-open view along III-III ' line among Fig. 6 A.Please refer to Fig. 6 A and Fig. 6 B, in Fig. 6 A, first perimeter circuit pattern 226 of the first metal layer 220 and the second perimeter circuit pattern 248 of second metal level 240 are to be electrically connected to each other by electrode layer 262.In more detail, dielectric layer 230 has a plurality of the 4th openings 234, expose the part first perimeter circuit pattern 226, and flatness layer 280 has a plurality of the 5th openings 284 and a plurality of the 6th openings 286 that expose the part second perimeter circuit pattern 248 that expose the 4th opening 234, and electrode layer 262 is to be connected between the first perimeter circuit pattern 226 and the second perimeter circuit pattern 248 by the 4th opening 234, the 5th opening 284 and the 6th opening 286.Wherein, electrode layer 262 for example is to belong to same rete with pixel electrode 260.
Fig. 7 is the partial sectional view of the thin-film transistor array base-plate of another embodiment of the present invention.Please refer to Fig. 7, the structure of thin-film transistor array base-plate 200a is similar to the thin-film transistor array base-plate of Fig. 4, and difference is that thin-film transistor array base-plate 200a also comprises protective seam 290, and it is arranged between second metal level 240 and the flatness layer 280.Protective seam 290 has a plurality of second openings 292 that communicate with first opening 282, and pixel electrode 260 is to be electrically connected with drain electrode 246 by first opening 282 and second opening 292.
Fig. 8 is the vertical view of single pixel of the thin-film transistor array base-plate of further embodiment of this invention.Please refer to Fig. 8, compare with the thin-film transistor array base-plate 200 of Fig. 3, the first metal layer 220 of the thin-film transistor array base-plate 200b of present embodiment also comprises many shared distributions 228, these shared distributions 228 are parallel to scan wiring 222 in fact, and are provided with shared distribution 228 between adjacent two scan wirings 222.
Fig. 9 A and Fig. 9 B are the vertical views of single pixel of two kinds of thin-film transistor array base-plates of yet another embodiment of the invention.Please refer to Fig. 9 A and Fig. 9 B, thin-film transistor array base-plate 200c is similar to thin-film transistor array base-plate 200, and thin-film transistor array base-plate 200d is similar to thin-film transistor array base-plate 200b, below only describes at difference.In thin-film transistor array base-plate 200c, 200d, second metal level 240 also comprises a plurality of patterns 249 of floating, and is arranged between the source electrode 244 and drain electrode 246 in each pixel region 212.In addition, be provided with two grids 224 in each pixel region 212, one of them grid 224 overlaps with source electrode 244, and another grid 224 overlaps with drain electrode 246, and two grids 224 in the pixel region 212 at float pattern 249 and its place in each pixel region 212 overlap.
Among above-mentioned thin-film transistor array base-plate 200c, the 200d, floating in each pixel region 212 can form one group of source/drain between pattern 249 and the source electrode 244, can form another group source/drain between pattern 249 and the drain electrode 246 and float.When the design of this bigrid 224 can prevent that thin film transistor (TFT) from cutting out, the situation that has electric leakage took place, and therefore can improve the display quality of electronic ink display device.
In sum, electronic ink display device of the present invention has following advantage at least:
1. compare with the employed thin-film transistor array base-plate of known electronic ink display device, the required during fabrication processing step of the employed thin-film transistor array base-plate of electronic ink display device of the present invention is less, so can reduce the production time and reduce production costs, and then lower the production cost of whole electronic ink display device.
2. in electronic ink display device of the present invention, the thin film transistor (TFT) in each pixel region of thin-film transistor array base-plate can be designed to double-grid structure, in case the generation of the situation of leak-stopping electricity, and then the display quality of raising electronic ink display device.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; any person of ordinary skill in the field; without departing from the spirit and scope of the present invention; when can doing a little change and improvement, so protection scope of the present invention is as the criterion when looking the claim person of defining.
Claims (13)
1. electronic ink display device is characterized in that comprising:
Thin-film transistor array base-plate comprises:
First substrate;
The first metal layer is arranged on this first substrate, and this first metal layer comprises:
Plurality of scanning wirings;
A plurality of grids are electrically connected with above-mentioned these scan wirings;
Dielectric layer is arranged on this first substrate, and covers this first metal layer;
Second metal level is arranged on this dielectric layer, and this second metal level comprises:
Many data wirings mark off a plurality of pixel regions with above-mentioned these scan wirings on this first substrate, and above-mentioned these grids are to be positioned at above-mentioned these pixel regions;
A plurality of source/drains are arranged at respectively in this pixel region, and above-mentioned these source electrodes are to be electrically connected to above-mentioned these data wirings, wherein respectively overlap one of in this source/drain and above-mentioned these grids;
Channel layer is arranged on this dielectric layer between above-mentioned these grids and above-mentioned these source/drains;
A plurality of pixel electrodes are arranged in above-mentioned these pixel regions, and are electrically connected with above-mentioned these drain electrodes;
Front panel is arranged at a side of this thin-film transistor array base-plate, and this front panel comprises:
Second substrate;
Transparent electrode layer is arranged on this second substrate; And
Electronic ink material layer is arranged between this transparent electrode layer and this thin-film transistor array base-plate.
2. electronic ink display device according to claim 1 is characterized in that this thin-film transistor array base-plate also comprises flatness layer, covers this first substrate, and between this second metal level and above-mentioned these pixel electrodes.
3. electronic ink display device according to claim 2, it is characterized in that this flatness layer has a plurality of first openings, expose the subregion of above-mentioned these drain electrodes, so that above-mentioned these pixel electrodes are electrically connected with above-mentioned these drain electrodes by above-mentioned these first openings.
4. electronic ink display device according to claim 2 is characterized in that the material of this flatness layer comprises resin.
5. electronic ink display device according to claim 2 is characterized in that this thin-film transistor array base-plate also comprises protective seam, is arranged between this second metal level and this flatness layer.
6. electronic ink display device according to claim 5; it is characterized in that this protective seam has a plurality of second openings; expose the subregion of above-mentioned these drain electrodes; and this flatness layer has a plurality of first openings; expose above-mentioned these second openings, and above-mentioned these pixel electrodes are by above-mentioned these first openings and above-mentioned these second openings and be electrically connected with above-mentioned these drain electrodes.
7. electronic ink display device according to claim 1 is characterized in that this thin-film transistor array base-plate also comprises ohmic contact layer, is arranged between this channel layer and above-mentioned these source/drains.
8. electronic ink display device according to claim 1 is characterized in that this first metal layer also comprises many shared distributions, is parallel to above-mentioned these scan wirings in fact, and is provided with shared distribution between adjacent two scan wirings.
9. electronic ink display device according to claim 1, it is characterized in that this second metal level also comprises a plurality of patterns of floating, be arranged between this source electrode and this drain electrode in this pixel region respectively, and respectively be provided with two grids in this pixel region, respectively with this source electrode and this drain electrode in one of overlap, and respectively float pattern and above-mentioned these grids of this in this pixel region overlap.
10. electronic ink display device according to claim 1, it is characterized in that this first metal layer also comprises the first perimeter circuit pattern, and this second metal level also comprises the second perimeter circuit pattern, overlap with this first perimeter circuit pattern, and this dielectric layer has a plurality of the 3rd openings, so that this second perimeter circuit pattern is electrically connected to this first perimeter circuit pattern by above-mentioned these the 3rd openings.
11. electronic ink display device according to claim 1, it is characterized in that this first metal layer also comprises the first perimeter circuit pattern, and this second metal level also comprises the second perimeter circuit pattern, and this thin-film transistor array base-plate also comprises electrode layer, is electrically connected between this first perimeter circuit pattern and this second perimeter circuit pattern.
12. electronic ink display device according to claim 11 is characterized in that this electrode layer and above-mentioned these pixel electrodes are to belong to same rete.
13. electronic ink display device according to claim 1 is characterized in that the material of above-mentioned these pixel electrodes comprises electrically conducting transparent material or metal material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510124092 CN1975547A (en) | 2005-11-28 | 2005-11-28 | Electronic ink displaying device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510124092 CN1975547A (en) | 2005-11-28 | 2005-11-28 | Electronic ink displaying device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1975547A true CN1975547A (en) | 2007-06-06 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200510124092 Pending CN1975547A (en) | 2005-11-28 | 2005-11-28 | Electronic ink displaying device |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101324732B (en) * | 2008-08-04 | 2011-01-05 | 京东方科技集团股份有限公司 | Electronic paper display device and drive method thereof |
| CN102495506A (en) * | 2011-07-08 | 2012-06-13 | 友达光电股份有限公司 | Electrophoretic display panel |
| CN110955092A (en) * | 2019-12-17 | 2020-04-03 | 京东方科技集团股份有限公司 | Sub-pixel structure, display panel and display device |
| CN111952321A (en) * | 2019-05-17 | 2020-11-17 | 元太科技工业股份有限公司 | Display device and thin film transistor array substrate |
| CN113777847A (en) * | 2021-09-10 | 2021-12-10 | 京东方科技集团股份有限公司 | Array substrate and display device |
-
2005
- 2005-11-28 CN CN 200510124092 patent/CN1975547A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101324732B (en) * | 2008-08-04 | 2011-01-05 | 京东方科技集团股份有限公司 | Electronic paper display device and drive method thereof |
| CN102495506A (en) * | 2011-07-08 | 2012-06-13 | 友达光电股份有限公司 | Electrophoretic display panel |
| CN111952321A (en) * | 2019-05-17 | 2020-11-17 | 元太科技工业股份有限公司 | Display device and thin film transistor array substrate |
| CN111952321B (en) * | 2019-05-17 | 2024-06-11 | 元太科技工业股份有限公司 | Display device and array structure |
| CN110955092A (en) * | 2019-12-17 | 2020-04-03 | 京东方科技集团股份有限公司 | Sub-pixel structure, display panel and display device |
| CN110955092B (en) * | 2019-12-17 | 2023-05-26 | 京东方科技集团股份有限公司 | Sub-pixel structure, display panel and display device |
| CN113777847A (en) * | 2021-09-10 | 2021-12-10 | 京东方科技集团股份有限公司 | Array substrate and display device |
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