CN111856832A - Reflective active element array substrate, manufacturing method thereof and reflective display device - Google Patents
Reflective active element array substrate, manufacturing method thereof and reflective display device Download PDFInfo
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- CN111856832A CN111856832A CN201910326367.5A CN201910326367A CN111856832A CN 111856832 A CN111856832 A CN 111856832A CN 201910326367 A CN201910326367 A CN 201910326367A CN 111856832 A CN111856832 A CN 111856832A
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- 239000000758 substrate Substances 0.000 title claims abstract description 122
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000010410 layer Substances 0.000 claims abstract description 129
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 48
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 48
- 239000004020 conductor Substances 0.000 claims abstract description 38
- 239000011241 protective layer Substances 0.000 claims abstract description 21
- 238000002161 passivation Methods 0.000 claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims description 31
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
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- 238000006243 chemical reaction Methods 0.000 claims description 11
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- 239000000463 material Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 10
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims description 8
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims description 8
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 5
- 239000012495 reaction gas Substances 0.000 claims description 5
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 5
- NXLSGYSTDQCZQM-UHFFFAOYSA-N [O-2].[Nb+5].[Mo+4] Chemical compound [O-2].[Nb+5].[Mo+4] NXLSGYSTDQCZQM-UHFFFAOYSA-N 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims 1
- 229910052758 niobium Inorganic materials 0.000 claims 1
- 239000010955 niobium Substances 0.000 claims 1
- 239000000376 reactant Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 11
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- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
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- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field
- G02F1/166—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect
- G02F1/167—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect by electrophoresis
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field
- G02F1/1675—Constructional details
- G02F1/16755—Substrates
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field
- G02F1/1675—Constructional details
- G02F1/16756—Insulating layers
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field
- G02F1/1675—Constructional details
- G02F1/1676—Electrodes
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field
- G02F1/1675—Constructional details
- G02F1/1676—Electrodes
- G02F1/16766—Electrodes for active matrices
Abstract
The invention provides a reflective active element array substrate, a manufacturing method thereof and reflective display equipment. The reflective active device array substrate comprises a substrate, a plurality of active components, a protective layer and a plurality of metal oxide conductor layers. The active components are dispersedly arranged on the substrate. The protective layer is arranged on the substrate and covers the active component. The passivation layer has a plurality of openings, and each opening exposes a source or a drain of the corresponding active device. The metal oxide conductor layer is arranged on the substrate and covers the protective layer. Each metal oxide conductor layer is electrically connected with the source electrode or the drain electrode of the corresponding active component through the corresponding opening. Therefore, the reflection of the external light can be reduced.
Description
Technical Field
The invention relates to a substrate and a manufacturing method thereof, in particular to a reflective active element array substrate, a manufacturing method thereof and reflective display equipment adopting the reflective active element array substrate.
Background
The electrophoretic display device is mostly a reflective display device, and external light beams are reflected by using electrophoretic particles inside the electrophoretic display device, so that the purpose of displaying pictures is achieved. At present, the active device array substrate of the electrophoretic display device mostly uses opaque metal material as the conductive electrode. Besides the conductive effect, the conductive electrode made of metal material can also shield light to avoid the photoelectric effect of the active element caused by illumination. However, when the display medium layer is broken, the conductive electrode made of metal material can directly reflect light, so that the viewer can see an obvious bright spot, thereby affecting the product quality.
Disclosure of Invention
The invention aims at a reflective active element array substrate, replaces the existing conductive electrode made of metal materials by a metal oxide conductor layer, has lower light reflectivity and can reduce the reflection of external light.
The invention is directed to a method for manufacturing a reflective active device array substrate, which is used for manufacturing the reflective active device array substrate.
The invention also provides a reflective display device, which comprises the reflective active element array substrate and has better display quality.
The invention relates to a reflective active element array substrate, which comprises a substrate, a plurality of active elements, a protective layer and a plurality of metal oxide conductor layers. The active elements are dispersedly arranged on the substrate. The protective layer is disposed on the substrate and covers the active device. The passivation layer has a plurality of openings, and each opening exposes a source or a drain of the corresponding active device. The metal oxide conductor layer is arranged on the substrate and covers the protective layer. Each metal oxide conductor layer is electrically connected with the source electrode or the drain electrode of each corresponding active component through each corresponding opening.
In an embodiment of the invention, a material of each of the metal oxide conductive layers includes molybdenum oxide, molybdenum niobium oxide, tantalum oxide, or aluminum oxide.
In an embodiment of the invention, each of the active devices includes a gate, a semiconductor channel layer, a gate insulating layer, and a source and a drain. The grid is arranged on the substrate. The grid insulating layer covers the grid and is positioned between the grid and the semiconductor channel layer. The source and the drain are arranged on the same side of the semiconductor channel layer and expose part of the semiconductor channel layer.
The invention relates to a manufacturing method of a reflective active element array substrate, which comprises the following steps. An array substrate is provided. The array substrate comprises a substrate, a plurality of active elements and a protective layer. The active devices are dispersedly formed on the substrate, and the protective layer is formed on the substrate and covers the active devices. The passivation layer has a plurality of openings, and each opening exposes a source or a drain of each corresponding active device. And moving the array substrate into a reaction chamber, wherein the reaction chamber is provided with a metal target. And introducing reaction gas into the reaction chamber to perform chemical reaction with the metal target, so as to form a plurality of metal oxide conducting layers on the array substrate. The metal oxide conductor layers cover the protective layers, and each metal oxide conductor layer is electrically connected with the source electrode or the drain electrode of each corresponding active element through each corresponding opening.
In an embodiment of the invention, the metal target includes molybdenum, molybdenum-niobium, tantalum or aluminum, and the reaction gas includes oxygen.
In an embodiment of the invention, each of the active devices includes a gate, a semiconductor channel layer, a gate insulating layer, and a source and a drain. The grid is arranged on the substrate. The grid insulating layer covers the grid and is positioned between the grid and the semiconductor channel layer. The source and the drain are arranged on the same side of the semiconductor channel layer and expose part of the semiconductor channel layer.
The reflective display device comprises a reflective active element array substrate and an electrophoretic display film. The reflective active device array substrate comprises a substrate, a plurality of active devices, a protective layer and a plurality of metal oxide conductor layers. The active elements are dispersedly arranged on the substrate. The protective layer is disposed on the substrate and covers the active device. The passivation layer has a plurality of openings, and each opening exposes a source or a drain of each corresponding active device. The metal oxide conductor layer is arranged on the substrate and covers the protective layer. Each metal oxide conductor layer is electrically connected with the source electrode or the drain electrode of each corresponding active component through each corresponding opening. The electrophoresis display film is configured on the reflection type active element array substrate.
In an embodiment of the invention, a material of each of the metal oxide conductive layers includes molybdenum oxide, molybdenum niobium oxide, tantalum oxide, or aluminum oxide.
In an embodiment of the invention, each of the active devices includes a gate, a semiconductor channel layer, a gate insulating layer, and a source and a drain. The grid is arranged on the substrate. The grid insulating layer covers the grid and is positioned between the grid and the semiconductor channel layer. The source and the drain are arranged on the same side of the semiconductor channel layer and expose part of the semiconductor channel layer.
In an embodiment of the invention, the electrophoretic display film includes a flexible substrate, a transparent conductive layer, and a display medium layer. The transparent conductive layer is disposed on the flexible substrate and between the reflective active device array substrate and the flexible substrate. The display medium layer is configured on the flexible base material and is positioned between the reflective active element array substrate and the transparent conductive layer. The display medium layer includes a plurality of display media. Each display medium comprises an electrophoretic fluid and a plurality of charged particles distributed in the electrophoretic fluid.
In view of the above, in the structure of the reflective active device array substrate of the present invention, the metal oxide conductor layer is used as the conductive electrode. Compared with the prior art that a metal material is adopted as the conductive electrode, the metal oxide conductor layer has lower light reflectivity and can reduce the reflection of external light. Therefore, when the electrophoresis display film of the reflective display device adopting the reflective active element array substrate is broken, the metal oxide conductor layer can reduce the reflection of external light rays without generating bright spots, so that the reflective display device has better display quality.
In order to make the aforementioned and other features and advantages of the invention more comprehensible, embodiments accompanied with figures are described in detail below.
Drawings
The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and together with the description serve to explain the principles of the invention.
Fig. 1 is a schematic cross-sectional view of a reflective active device array substrate according to an embodiment of the invention;
FIG. 2 is a flowchart illustrating a method for fabricating a reflective active device array substrate according to an embodiment of the present invention;
fig. 3A to 3B are schematic cross-sectional views illustrating a method for fabricating the reflective active device array substrate of fig. 2;
fig. 4 is a schematic cross-sectional view of a reflective display apparatus according to an embodiment of the invention.
Description of the reference numerals
10: a reflective display device;
100: a reflective active device array substrate;
100 a: an array substrate;
110: a substrate;
120: an active element;
122 a: a source electrode;
122 b: a drain electrode;
124: a gate electrode;
126: a gate insulating layer;
128: a semiconductor channel layer;
130: a protective layer;
132: an opening;
140: a metal oxide conductor layer;
200: an electrophoretic display film;
210: a flexible substrate;
220: a transparent conductive layer;
230: a display medium layer;
232: a display medium;
234: electrophoresis liquid;
236: charged particles;
s10, S20, S30: and (5) carrying out the following steps.
Detailed Description
Reference will now be made in detail to exemplary embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings and the description to refer to the same or like parts.
Fig. 1 is a schematic cross-sectional view of a reflective active device array substrate according to an embodiment of the invention. Referring to fig. 1, a reflective active device array substrate 100 of the present embodiment includes a substrate 110, a plurality of active devices 120 (only two are schematically shown in fig. 1), a passivation layer 130, and a plurality of metal oxide conductor layers 140 (only two are schematically shown in fig. 1). The active devices 120 are disposed on the substrate 110 in a distributed manner. The passivation layer 130 is disposed on the substrate 110 and covers the active device 120. The passivation layer 130 has a plurality of openings 132 (only two are schematically shown in fig. 1), and each opening 132 exposes the source 122a or the drain 122b of the corresponding active device 120. The metal oxide conductor layer 140 is disposed on the substrate 110 and covers the passivation layer 130. Each metal oxide conductor layer 140 is electrically connected to the source 122a or the drain 122b of each active device 120 through each corresponding opening 132.
In detail, the active device 120 of the present embodiment includes a gate 124, a semiconductor channel layer 128, a gate insulating layer 126, a source 122a and a drain 122 b. The gate electrode 124 is disposed on the substrate 110, and the gate insulating layer 126 covers the gate electrode 124 and a portion of the substrate 110. The semiconductor channel layer 128 is located on a side of the gate insulating layer 126 opposite to the gate electrode 124 and does not contact the gate electrode 124, i.e., the gate insulating layer 126 is disposed between the gate electrode 124 and the semiconductor channel layer 128. The source 122a and the drain 122b are disposed on the same side of the semiconductor channel layer 128, and expose a portion of the semiconductor channel layer 128. Here, as can be seen from the arrangement of the gate electrode 124, the gate insulating layer 126, the semiconductor channel layer 128, the source electrode 122a and the drain electrode 122b, the active device 120 of the present embodiment is embodied as a bottom-gate thin film transistor, but not limited thereto. The present invention is not limited to the structure of the active device 120, and in other embodiments, the active device may be a top-gate thin film transistor, which still falls within the protection scope of the present invention.
Referring to fig. 1, the opening 132 of the passivation layer 130 of the present embodiment exposes the drain 122b of the corresponding active device 120. However, in other embodiments not shown, the opening of the passivation layer may also expose the source of the corresponding active device. The metal oxide conductor layer 140 is electrically connected to the drain 122b of each active device 120 through the corresponding opening 132. The metal oxide conductor layer 140 has opaque (i.e. light shielding), conductive and low reflective properties, wherein the material of the metal oxide conductor layer 140 can be, for example, molybdenum oxide, niobium molybdenum oxide, tantalum oxide, aluminum oxide or other metal oxides with low reflectivity.
In short, in the structure of the reflective active device array substrate 100 of the present embodiment, the metal oxide conductor layer 140 is used as a conductive electrode. Compared to the conventional metal material used as the conductive electrode, the metal oxide conductive layer 140 of the present embodiment has a lower light reflectivity, so as to reduce the reflection of the external light. Furthermore, the metal oxide conductor layer 140 of the present embodiment still has opaque (i.e. light blocking), conductive and reflective properties due to the material characteristics, and therefore, the product characteristics of the reflective active device array substrate 100 are not affected. In addition, compared to the conductive electrode made of metal, the metal oxide conductor layer 140 of the present embodiment has better corrosion resistance, so that the reflective active device array substrate 100 has better product reliability.
The structure of the reflective active device array substrate 100 of the present embodiment is described above. The method for manufacturing the reflective active device array substrate 100 of the present embodiment will be described with reference to the flowchart of fig. 2 and the cross-sectional views of fig. 3A and 3B.
Fig. 2 is a flowchart of a method for manufacturing a reflective active device array substrate according to an embodiment of the invention. Fig. 3A to 3B are schematic cross-sectional views illustrating a method for fabricating the reflective active device array substrate of fig. 2. Referring to fig. 2 and fig. 3A, first, in step S10, an array substrate 100a is provided, in which the array substrate 100a includes a substrate 110, active devices 120 (only two are schematically shown in fig. 3A), and a protection layer 100 a. The active devices 120 are dispersedly formed on the substrate 110, and the passivation layer 130 is formed on the substrate 110 and covers the active devices 120. The passivation layer 130 has openings 132 (only two are schematically shown in fig. 3A), and each opening 132 exposes the corresponding drain 122b of each active device 120.
Next, referring to fig. 2 and 3A, in step S20, the array substrate 100a is moved into a reaction chamber (not shown), wherein the reaction chamber is provided with a metal target (not shown). Here, the metal target is, for example, molybdenum niobium, tantalum, or aluminum.
Thereafter, referring to fig. 2 and fig. 3B, in step S30, when the metal target is bombarded by the plasma (not shown), a reaction gas (not shown) is introduced into the reaction chamber (not shown) to chemically react with the metal target, so as to form the metal oxide conductive layer 140 on the array substrate 100 a. At this time, the metal oxide conductor layers 140 cover the passivation layer 130, and each metal oxide conductor layer 140 is electrically connected to the drain 122b of each active device 120 through each corresponding opening 132. Here, the reaction gas is, for example, oxygen. Thus, the fabrication of the reflective active device array substrate 100 is completed.
For example, if molybdenum is selected as the metal target according to the above process, molybdenum oxide can be formed by introducing oxygen gas when the metal target is bombarded by the plasma. Compared with the common metal molybdenum, the molybdenum oxide can reflect about 60 percent of incident light, and the molybdenum oxide with the same thickness can reflect about 6 percent of incident light, thereby obviously reducing the light reflectivity.
In short, in the method for manufacturing the reflective active device array substrate 100 of the present embodiment, the metal oxide conductor layer 140 is used to replace the conductive electrode of the conventional metal material, so that the reflective active device array substrate has a low light reflectivity in addition to conductivity and light blocking performance, and can reduce the reflection of external light.
Fig. 4 is a schematic cross-sectional view of a reflective display apparatus according to another embodiment of the present invention. Referring to fig. 4, the reflective display device 10 of the present embodiment includes the reflective active device array substrate 100 and the electrophoretic display film 200, wherein the electrophoretic display film 200 is disposed on the reflective active device array substrate 100. The electrophoretic display film 200 includes a flexible substrate 210, a transparent conductive layer 220, and a display medium layer 230. The transparent conductive layer 220 is disposed on the flexible substrate 210 and located between the reflective active device array substrate 100 and the flexible substrate 210. Here, the material of the flexible substrate 210 is, for example, Polyethylene terephthalate (PET) or Polyethylene naphthalate (PEN), but not limited thereto. The material of the transparent conductive layer 220 is, for example, Indium Tin Oxide (ITO), but is not limited thereto. The display medium layer 230 is disposed on the flexible substrate 210 and located between the reflective active device array substrate 100 and the transparent conductive layer 220. The display medium layer 230 includes a plurality of display media 232 (only two are schematically illustrated in fig. 3A to 3B), and each display medium 232 includes an electrophoretic fluid 234 and a plurality of charged particles 236 distributed in the electrophoretic fluid 234. Specifically, the charged particles 236 include a plurality of white charged particles and a plurality of black charged particles, and the movement of the black charged particles and the white charged particles can be driven by applying a dc voltage or an ac voltage, thereby displaying black, white, or gray of different gradations. Of course, in other embodiments not shown, each display medium may also include an electrophoretic fluid and a plurality of white charged particles distributed in the electrophoretic fluid, wherein the electrophoretic fluid is, for example, a black electrophoretic fluid; alternatively, the electrophoretic fluid and the charged particles may have other colors, which is not limited herein.
In the manufacturing process of the reflective display device 10, the reflective active device array substrate 100 is formed in the manner shown in fig. 2 and 3A to 3B. Then, as shown in fig. 4, the electrophoretic display film 200 is assembled on the reflective active device array substrate 100. Thus, the reflective display device 10 is completed.
In short, the reflective display device 10 of the present embodiment includes the reflective active device array substrate 100, wherein the reflective active device array substrate 100 uses the metal oxide conductor layer 140 as a conductive electrode. Compared to the conventional conductive electrode made of metal material, when the electrophoretic display film 200 is broken, the metal oxide conductive layer 140 of the present embodiment can reduce the reflection of external light without generating bright spots, so that the reflective display device 10 has better display quality.
In view of the above, in the structure of the reflective active device array substrate of the present invention, the metal oxide conductor layer is used as the conductive electrode. Compared with the prior art that a metal material is adopted as the conductive electrode, the metal oxide conductor layer has lower light reflectivity and can reduce the reflection of external light. Therefore, when the electrophoresis display film of the reflective display device adopting the reflective active element array substrate is broken, the metal oxide conductor layer can reduce the reflection of external light rays without generating bright spots, so that the reflective display device has better display quality.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. A reflective active device array substrate, comprising:
a substrate;
a plurality of active elements dispersedly disposed on the substrate;
a protective layer disposed on the substrate and covering the plurality of active devices, wherein the protective layer has a plurality of openings, and each of the openings exposes a source or a drain of each of the plurality of active devices; and
a plurality of metal oxide conductor layers disposed on the substrate and covering the passivation layer, wherein each of the plurality of metal oxide conductor layers is electrically connected to the source or the drain of each of the plurality of active devices through each of the plurality of openings.
2. The reflective active device array substrate of claim 1, wherein the material of each of the plurality of metal oxide conductor layers comprises molybdenum oxide, molybdenum niobium oxide, tantalum oxide or aluminum oxide.
3. The reflective active device array substrate of claim 1, wherein each of the plurality of active devices comprises:
a gate electrode disposed on the substrate;
a semiconductor channel layer;
the grid insulating layer covers the grid and is positioned between the grid and the semiconductor channel layer; and
the source electrode and the drain electrode are arranged on the same side of the semiconductor channel layer, and part of the semiconductor channel layer is exposed.
4. A manufacturing method of a reflective active element array substrate comprises the following steps:
providing an array substrate, wherein the array substrate comprises a substrate, a plurality of active elements and a protective layer, the plurality of active elements are dispersedly formed on the substrate, the protective layer is formed on the substrate and covers the plurality of active elements, the protective layer is provided with a plurality of openings, and each opening respectively exposes a source electrode or a drain electrode of each corresponding active element;
Moving the array substrate into a reaction chamber, wherein the reaction chamber is provided with a metal target; and
and introducing a reaction gas into the reaction chamber to perform a chemical reaction with the metal target, so as to form a plurality of metal oxide conductive layers on the array substrate, wherein the plurality of metal oxide conductive layers cover the protective layer, and the plurality of metal oxide conductive layers are electrically connected with the source electrode or the drain electrode of each of the plurality of active elements through each of the plurality of corresponding openings.
5. The method of claim 4, wherein the metal target comprises Mo, Mo-Nb, Ta, or Al, and the reactant gas comprises oxygen.
6. The method of claim 4, wherein each of the plurality of active devices comprises:
a gate electrode disposed on the substrate;
a semiconductor channel layer;
the grid insulating layer covers the grid and is positioned between the grid and the semiconductor channel layer; and
the source electrode and the drain electrode are arranged on the same side of the semiconductor channel layer, and part of the semiconductor channel layer is exposed.
7. A reflective display device, comprising:
the reflective active device array substrate includes:
a substrate;
a plurality of active elements dispersedly disposed on the substrate;
a protective layer disposed on the substrate and covering the plurality of active devices, wherein the protective layer has a plurality of openings, and each of the openings exposes a source or a drain of each of the plurality of active devices; and
a plurality of metal oxide conductor layers disposed on the substrate and covering the passivation layer, wherein each of the plurality of metal oxide conductor layers is electrically connected to the source or the drain of each of the plurality of active devices through each of the plurality of openings; and
and the electrophoretic display film is configured on the reflective active element array substrate.
8. The reflective display device of claim 7, wherein a material of each of the plurality of metal oxide conductor layers comprises molybdenum oxide, molybdenum niobium oxide, tantalum oxide, or aluminum oxide.
9. The reflective display device of claim 7, wherein each of the plurality of active elements comprises:
A gate electrode disposed on the substrate;
a semiconductor channel layer;
the grid insulating layer covers the grid and is positioned between the grid and the semiconductor channel layer; and
the source electrode and the drain electrode are arranged on the same side of the semiconductor channel layer, and part of the semiconductor channel layer is exposed.
10. The reflective display device of claim 7, wherein the electrophoretic display film comprises:
a flexible substrate;
a transparent conductive layer disposed on the flexible substrate and located between the reflective active device array substrate and the flexible substrate; and
and the display medium layer is configured on the flexible base material and positioned between the reflective active element array substrate and the transparent conductive layer, the display medium layer comprises a plurality of display media, and each display medium comprises electrophoretic fluid and a plurality of charged particles distributed in the electrophoretic fluid.
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