CN101872770B - Pixel unit, coplane conversion type liquid crystal display device and manufacturing method - Google Patents
Pixel unit, coplane conversion type liquid crystal display device and manufacturing method Download PDFInfo
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- CN101872770B CN101872770B CN200910050463.8A CN200910050463A CN101872770B CN 101872770 B CN101872770 B CN 101872770B CN 200910050463 A CN200910050463 A CN 200910050463A CN 101872770 B CN101872770 B CN 101872770B
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Abstract
The invention relates to a pixel unit, a coplane conversion type liquid crystal display device and a manufacturing method. The pixel unit is defined by a adjacent scanning line and an adjacent data line which are configured on a substrate and are intersected with each other, the pixel unit comprises a transistor and a memory capacitor, wherein the transistor is configured on the substrate, the grid of the transistor is connected with the scanning line, the source of the transistor is connected with the data line and the drain of the transistor is connected with a pixel electrode; and the memory capacitor is formed by a lower electrode, a middle electrode, an upper electrode and medium layers among the electrodes, and the lower electrode, the middle electrode and the upper electrode of the memory capacitor are respectively arranged on a first conductive layer, a second conductive layer and a third conductive layer. The pixel unit additionally comprises a light blocking strip which is arranged on the first conductive layer or the second conductive layer and is overlapped with the pattern part of the pixel electrode. By adopting the pixel unit and the coplane conversion type liquid crystal display device, since the area of the memory capacitor is reduced, the invention has the advantages that the aperture opening ratio is improved, the display quality is improved and the contrast is improved.
Description
Technical field
The present invention relates to field of liquid crystal display, particularly pixel cell, coplane conversion type liquid crystal display device and manufacture method.
Background technology
In recent years, along with the increase to mobile message medium demand, studying energetically the frivolous portable liquid crystal display (LCD) that can substitute existing cathode ray tube (CRT).The most frequently used is twisted-nematic (TN) liquid crystal display pattern, and after its energising, liquid crystal molecule is distorted under the effect of electric field, by controlling the arrangement of liquid crystal molecule, controls passing through of light.The shortcoming of this TN LCD display unit is that visual angle is very narrow, and this is that anisotropy by liquid crystal molecule causes, although can make up by optical compensation mode the defect that visual angle is narrow, must expend certain cost.Given this kind of coplane conversion type liquid crystal display device (IPS, In Plane Switching) of wide viewing angle display mode has been proposed.
For example U.S. Patent application US2006290286 just provides a kind of coplane conversion type liquid crystal display device.A pixel cell in this coplane conversion type liquid crystal display device, shown in Fig. 1, described pixel cell comprises: controlling grid scan line 112; Data wire 115, object is to provide voltage to pixel electrode; Pixel electrode 117, adopts such as transparent materials such as ITO, with respect to other opaque metal electrodes, can increase aperture opening ratio or aperture ratio; Thin film transistor switch, it comprises gate electrode, the gate insulation layer on gate electrode and the semiconductor layer on gate insulation layer 114 being connected with controlling grid scan line 112, its source electrode 115a is positioned on semiconductor layer 114, be connected with data wire 115, its drain electrode 115b is connected with pixel electrode 117 by contact hole 181.Described pixel cell also comprises public electrode wire 124,125, public electrode wire 125 and controlling grid scan line 112 are commaterial, public electrode wire 124 is commaterial with pixel electrode 117, and public electrode wire 124 is connected with public electrode wire 125 by contact hole 182.
The storage capacitance that is used for preserving electric charge in above-mentioned pixel cell is single layer structure, and its cross-section structure in II-II ' direction is with reference to shown in Fig. 2, and described storage capacitance comprises: the insulating barrier 116 between bottom electrode 190, top electrode 191 and upper/lower electrode.Wherein, public electrode wire 125 is positioned on substrate 111, covering gate insulating barrier 113 on it, public electrode wire 125 is connected by contact hole as mentioned above with public electrode wire 124, the top electrode 191 of storage capacitance is positioned at public electrode wire 124 place layers, and the bottom electrode 190 of storage capacitance is positioned at drain electrode 115b place layer, drain electrode 115b is connected with pixel electrode 117 by contact hole as mentioned above.
Yet there is following shortcoming in above-mentioned pixel cell and storage capacitor construction thereof:
Above-mentioned storage capacitance is single layer structure, if will increase the value of storage capacitance, need to increase the area in storage capacitance region, increases the area of the upper/lower electrode of storage capacitance.But the area that increases the upper/lower electrode of storage capacitance can cause reducing of aperture opening ratio, so this storage capacitor construction is for the occasion of the larger storage capacitance of need, and its space that increases aperture opening ratio is very little, that is to say that aperture opening ratio can not further improve.
And, because public electrode wire 125 is same layer metal level with the scan line of lastrow pixel, carrying out etched time, consider etch bias, prevent along short circuit between the public electrode wire 125 of scan-line direction and the scan line of lastrow pixel, between the two, must keep the space length of 4-6um, will be unfavorable for like this raising of aperture opening ratio, thereby the brightness that impact shows, declines display quality.
Summary of the invention
The present invention solves prior art coplane conversion type liquid crystal display device and has poor contrast and the little problem of aperture opening ratio.
For addressing the above problem, the invention provides a kind of pixel cell, by being disposed on substrate, adjacent scanning lines and data wire intersected with each other define, and described pixel cell comprises:
Be disposed at the transistor on described substrate, described transistorized grid is connected with described scan line, and described transistorized source electrode is connected with described data wire, and described transistorized drain electrode is connected with pixel electrode;
And storage capacitance, wherein,
Described storage capacitance consists of bottom electrode, target, top electrode and each interelectrode dielectric layer, and the bottom electrode of described storage capacitance, target, top electrode lay respectively at the first conductive layer, the second conductive layer, the 3rd conductive layer.
Alternatively, also comprise shield bars, it is positioned at the first conductive layer, and overlapping with the visuals of described pixel electrode.And described shield bars and bottom electrode are electrically connected.
Alternatively, also comprise shield bars, it is positioned at the second conductive layer, and overlapping with the visuals of described pixel electrode.And described shield bars and target are electrically connected.
The present invention also provides a kind of coplane conversion type liquid crystal display device that comprises above-mentioned pixel cell.
The present invention also provides a kind of manufacture method of pixel cell, comprising:
On substrate, form the first conductive layer, and form scan line in the first conductive layer;
On described the first conductive layer, form first medium layer;
On described first medium layer, form the second conductive layer, and form data wire in the second conductive layer;
On described the second conductive layer, form second medium layer;
On described second medium layer, form the 3rd conductive layer, and form pixel electrode in the 3rd conductive layer, wherein,
The common corresponding surface of described the first conductive layer, the second conductive layer and the 3rd conductive layer forms respectively bottom electrode, target and the top electrode of storage capacitance.
Alternatively, also comprise: while forming scan line in the first conductive layer, also form shield bars, the visuals of described shield bars and described pixel electrode is overlapping.And described shield bars and bottom electrode are electrically connected.
Alternatively, also comprise: while forming data wire in the second conductive layer, also form shield bars, the visuals of described shield bars and described pixel electrode is overlapping.And described shield bars and target are electrically connected.
The present invention also provides a kind of manufacture method of coplane conversion type liquid crystal display device of the manufacture method that comprises above-mentioned pixel cell.
Compared with prior art, above-mentioned pixel cell, coplane conversion type liquid crystal display device and manufacture method have the following advantages: the common corresponding surface by described the first conductive layer, the second conductive layer and the 3rd conductive layer forms storage capacitance, in the situation that keeping design capacitance, reduced the area of storage capacitance, thereby raising aperture opening ratio, has improved display quality.
In addition, by being set, shield bars blocks throw light, improved prior art when coplane conversion type liquid crystal display device is operated in normal black pattern or black picture, can not show black completely situation, thereby improve the contrast of coplane conversion type liquid crystal display device.
Accompanying drawing explanation
Fig. 1 is a kind of example schematic of the pixel cell in prior art coplane conversion type liquid crystal display device;
Fig. 2 is the generalized section of pixel cell shown in Fig. 1 in II-II ' direction;
Fig. 3 is a kind of embodiment schematic diagram of the pixel cell in coplane conversion type liquid crystal display device of the present invention;
Fig. 3 a is a kind of shape schematic diagram of data wire, shading strip, public electrode, pixel electrode and shield bars in pixel cell shown in Fig. 3;
Fig. 4 is the generalized section of pixel cell shown in Fig. 3 in A1-A2 direction;
Fig. 5 is the another kind of embodiment schematic diagram of the pixel cell in coplane conversion type liquid crystal display device of the present invention;
Fig. 6 a is a kind of example schematic of the part section of pixel cell shown in Fig. 5 in B1-B2 direction;
Fig. 6 b is the another kind of example schematic of the part section of pixel cell shown in Fig. 5 in B1-B2 direction;
Fig. 7 is the schematic equivalent circuit in pixel cell shown in Fig. 5;
Fig. 8 is the schematic flow sheet of a kind of execution mode of the pixel cell manufacture method in coplane conversion type liquid crystal display device of the present invention;
Fig. 9 a to Fig. 9 g is the example schematic of manufacture method shown in Fig. 8.
Embodiment
Defect based on prior art, the pixel cell in coplane conversion type liquid crystal display device of the present invention arranges shield bars at pixel electrode place and blocks throw light, and by the reasonable adjustment to existing pixel cell structure, forms the storage capacitor construction of multilayer.
Shown in Fig. 3, a kind of embodiment of the pixel cell in coplane conversion type liquid crystal display device of the present invention comprises: substrate (not shown); Be disposed at scan line 101, data wire 102, public electrode 104 and pixel electrode 105 on substrate; Be disposed at the thin-film transistor 107 on substrate, its grid is connected with described scan line 101, and drain electrode is connected with pixel electrode 105, and source electrode is connected with data wire 102; Shading strip 103, described shading strip 103 is disposed on substrate along data wire 102 directions and near data wire 102; And shield bars 108, described shield bars 108 is disposed on substrate along pixel electrode 105 directions, and overlapping with the visuals of pixel electrode 105.
Wherein, described scan line 101 is positioned at the first conductive layer on substrate, and for example the material of described the first conductive layer can be metallic aluminium or aluminium neodymium alloy.Described data wire 102 is positioned at the second conductive layer on substrate, and for example the material of described the second conductive layer can be metal molybdenum.Between described the first conductive layer and the second conductive layer, have first medium layer, described first medium layer can comprise gate insulation layer and semiconductor layer.Described pixel electrode 105 is positioned at the 3rd conductive layer, and its material can adopt a kind of or combination in tin indium oxide (ITO) for example or indium zinc oxide (IZO) or indium oxide gallium (IGO).Between described the second conductive layer and the 3rd conductive layer, have second medium layer, described second medium layer can be protection insulating barrier.The material of described public electrode 104 can adopt a kind of or combination in tin indium oxide (ITO) for example or indium zinc oxide (IZO) or indium oxide gallium (IGO).When described public electrode 104 is selected transparent material, tin indium oxide for example, itself and scan line form in different metal layer, the raising of aperture opening ratio will be conducive to, also can improve in prior art, need to consider public electrode and the contraposition deviation of lastrow pixel cell scan line in same etch process, and make the problem that aperture opening ratio is less.
Wherein, described shield bars 108 can be positioned at the first conductive layer or the second conductive layer, forms in same technique with described scan line 101 or described data wire 102.Existence due to shield bars 108, shield bars 108 place's light can not see through, so can solve when pixel electrode 105 and public electrode 104 making alive, directly over pixel electrode 105, fail to form horizontal component of electric field, liquid crystal molecule directly over making can not rotate, when liquid crystal indicator is operated in normal black pattern or black picture, can not show black completely, the problem of the poor contrast of screen.
Wherein, described shield bars 108 can also be connected by contact hole in the side near thin-film transistor 107 with described pixel electrode 105, can prevent that like this pixel electrode 105 from disconnecting the defect causing.
Wherein, described pixel electrode 105, along the part of described data wire 102 directions, can replace with described shield bars 108, and described shield bars 108 is connected by contact with the part of described public electrode 104 along described scan line 101 directions., described shield bars 108 is in the light and as pixel electrode.
Wherein, described shading strip 103 also can be positioned at the first conductive layer or the second conductive layer, forms in same technique with described scan line 101 or described data wire 102 first conductive layer the second conductive layers.The existence of described shading strip can further increase aperture opening ratio.Preferably, described shading strip 103 is positioned at described the first conductive layer, forms in same technique with described scan line 101; Can make like this shading strip 103 and described data wire 102 lean on very closely, even overlap, and, to a certain degree overcome the contraposition offset issue in etch process.
Wherein, described shading strip 103 with the position relationship of described public electrode 104 can be: overlap, all overlapping, completely not overlapping.Preferably, described shading strip 103 overlaps with described public electrode 104, and the underlapped part of public electrode 104 is positioned at the side away from described data wire 102; Described like this shading strip 103 can also play the effect that improves aperture opening ratio and contrast.
Wherein, described shading strip 103 can also be connected by contact hole with described public electrode 104, can prevent that public electrode wire from disconnecting the defect causing.
Wherein, described public electrode 104 can replace with described shading strip 103 along the part of described data wire 102 directions, and described shading strip 103 is connected by contact hole with the part of described public electrode 104 along described scan line 101 directions., described shading strip 103 is in the light and as public electrode.
Wherein, shown in Fig. 3 a, the shape of described data wire 102, shading strip 103, public electrode 104, pixel electrode 105 and shield bars 108 can be all herringbone.In addition, its shape can be also waveform.When above-mentioned figure is herringbone or waveform, can make the liquid crystal molecule in liquid crystal cell arrange in multidomain, this is conducive to the raising at liquid crystal indicator visual angle.
Below, by the generalized section of pixel cell in A1-A2 direction in the Fig. 3 shown in Fig. 4, the storage capacitance region 106 in described pixel cell is further described.Shown in Fig. 3 and Fig. 4, this storage capacitance is designed to sandwich structure, consists of respectively bottom electrode 110, target 114 and the top electrode 115 of storage capacitance the common corresponding surface of the first conductive layer 201, the second conductive layer 202 and pixel electrode 105.
Specifically, top electrode 115 forms with the common corresponding surface of the second conductive layer 202 in pixel electrode 105, and described pixel electrode 105 is by drain electrode 111 electric connections of contact hole 109-2 and thin-film transistor 107, therefore the voltage on top electrode 115 is drain voltage.
When described shading strip 103 is positioned at the second conductive layer, described shading strip 103 can be the integral body of a connection with target 114, in technique, is integrally formed or has an electric connection.
Optionally, described bottom electrode 110 also can be electrically connected by contact hole with the drain electrode 111 of thin-film transistor 107, and also can make the voltage on described bottom electrode 110 is drain voltage; So just do not need to arrange described contact hole 109-1 to have connected bottom electrode 110 and pixel electrode 105.
In this storage capacitance, top electrode 115 and target 114 form storage capacitance Cs1, between the two, are protection insulating barrier 113, and described protection insulating barrier 113 can consist of insulating material such as silicon nitrides.Target 114 and bottom electrode 110 form storage capacitance Cs2, are gate insulation layer 112 between the two, and described gate insulator 112 can consist of insulating material such as silicon nitrides.Optionally, between described target 114 and described bottom electrode 110, can also comprise semiconductor layer.Storage capacitance Cs1, Cs2 are relations in parallel.So the storage capacitance value of coplane conversion type liquid crystal display device is Cs1, Cs2 sum of the two.
Therefore, from the explanation of this storage capacitance, can see, keeping on the constant basis of storage capacitance value, this storage capacitor construction can increase aperture opening ratio by reducing the area of storage capacitance.
Figure 5 shows that the another kind of embodiment schematic diagram of the pixel cell in coplane conversion type liquid crystal display device of the present invention.The pixel cell of this embodiment and the difference of the structure of the pixel cell shown in Fig. 3 are, shield bars 108 is electrically connected with the target 114 in storage capacitance region 106, adopt this connected mode, described shield bars 108 is when playing the effect of being in the light, further increase storage capacitance value, also further increase aperture opening ratio.
Certainly, also can be connected with the bottom electrode 110 in described storage capacitance region 106 by described shield bars 108, adopt this connected mode, target 114 can also be extended, all or part of overlapping with described shield bars 108, also can make described shield bars 108 play and be in the light when acting on, further increase storage capacitance value, also further increase aperture opening ratio.
Fig. 6 a and Fig. 6 b are respectively the example schematic of the part section of pixel cell shown in Fig. 5 in B1-B2 direction, the corresponding shield bars 108 of Fig. 6 a and the corresponding shield bars 108 of electric connection, Fig. 6 b of described target 114 and the electric connection of described bottom electrode 110.
Specifically, shown in Fig. 5 and Fig. 6 a, shield bars 108 can be positioned at the second conductive layer, and is electrically connected with the target 114 in storage capacitance region 106.Described shield bars 108 forms storage capacitance Cs3 with the common corresponding surface of pixel electrode 105.Storage capacitance Cs3 and storage capacitance Cs1, Cs2 are also relations in parallel.
Specifically, shown in Fig. 5 and Fig. 6 b, shield bars 108 can be positioned at the first conductive layer, and is electrically connected with the bottom electrode 110 in storage capacitance region 106.Described shield bars 108 forms storage capacitance Cs3a with the extension of target 114, and the extension of described target 114 and pixel electrode 105 form storage capacitance Cs3b, definition Cs3=Cs3a+Cs3b.Storage capacitance Cs3 and storage capacitance Cs1, Cs2 are also relations in parallel.
Fig. 7 is the schematic equivalent circuit in pixel cell shown in Fig. 5.For the different syndetons of above-mentioned two kinds of shield bars 108, shown in Fig. 7, the capacitance of pixel cell shown in Fig. 5 is all Clc+Cs1+Cs2+Cs3, and wherein Clc is the liquid crystal capacitance in pixel cell.Therefore, keeping on the constant basis of storage capacitance value, this storage capacitor construction, with respect to the storage capacitor construction of pixel cell shown in Fig. 3, can further reduce the area of storage capacitance, the corresponding aperture opening ratio that also increased.
Shown in Fig. 8, a kind of execution mode of the pixel cell manufacture method of coplane conversion type liquid crystal display device of the present invention comprises:
Step s1 forms the first conductive layer on substrate, and forms scan line in the first conductive layer;
Step s2 forms first medium layer on described the first conductive layer;
Step s3 forms the second conductive layer, and form data wire in the second conductive layer on described first medium layer;
Step s4 forms second medium layer on described the second conductive layer;
Step s5 forms the 3rd conductive layer on described second medium layer, and forms pixel electrode in the 3rd conductive layer, wherein,
The common corresponding surface of described the first conductive layer, the second conductive layer and the 3rd conductive layer forms respectively bottom electrode, target and the top electrode of storage capacitance.
The pixel cell obtaining by above-mentioned manufacture method, its storage capacitance is by the structure of bottom electrode, target and top electrode, and making total capacitance value is the storage capacitance sum of storage capacitance, target and the top electrode formation of bottom electrode and target formation.Thereby keeping on the constant basis of storage capacitance value, this storage capacitor construction can increase aperture opening ratio by reducing the area of storage capacitance.
Wherein, in above-mentioned manufacture method, can also comprise: while forming scan line in the first conductive layer, also form shield bars, the visuals of described shield bars and described pixel electrode is overlapping.And described shield bars and bottom electrode are electrically connected.
Wherein, in above-mentioned manufacture method, can also comprise: while forming scan line in the first conductive layer, also form shading strip, the visuals of described shading strip and described pixel electrode is overlapping.And described shading strip and bottom electrode are electrically connected.
Wherein, in above-mentioned manufacture method, can also comprise: while forming data wire in the second conductive layer, also form shield bars, the visuals of described shield bars and described pixel electrode is overlapping.And described shield bars and target are electrically connected.
Wherein, in above-mentioned manufacture method, can also comprise: while forming data wire in the second conductive layer, also form shading strip, the visuals of described shading strip and described pixel electrode layer is overlapping.And described shading strip and target are electrically connected.
The shield bars forming in above-mentioned manufacture method, when playing the effect of being in the light, can also further increase storage capacitance value, also further increases aperture opening ratio.
By example, the process of above-mentioned manufacture method is further described below.
Shown in Fig. 8 and Fig. 9 a, on the substrate 11 of glass substrate or flexible material formation, deposit the first conductive layer 101, the material of described the first conductive layer can be metallic aluminium or aluminium neodymium alloy.
Shown in Fig. 8 and Fig. 9 b, etching the first conductive layer 201 forms required scan line figure.Described etching can be wet etching.
Shown in Fig. 8 and Fig. 9 c, forming the amorphous silicon layer 13 that deposits successively gate insulation layer 112, amorphous silicon layer 12 and doping on the first conductive layer 101 of scan line figure.The material of described gate insulation layer 112 can be the insulating material such as silicon nitride.
Shown in Fig. 8 and Fig. 9 d, by dry etching, the amorphous silicon layer 13 of amorphous silicon layer 12 and doping is carried out to etching and form required figure.
Shown in Fig. 8 and Fig. 9 e, in structure shown in Fig. 9 d, deposit the second conductive layer 202.The material of described the second conductive layer can be metal molybdenum.
Shown in Fig. 8 and Fig. 9 f, by wet etching, form data wire figure, and the source-drain electrode part of thin-film transistor, and the target 114 of storage capacitance.
Shown in Fig. 8 and Fig. 9 g; deposition protection insulating barrier 113 in structure shown in Fig. 9 f; then described in etching, protect insulating barrier 113 to form contact hole; then deposit the 3rd conductive layer; and through and etch process to form pixel electrode 105 and public electrode 104, the material of described pixel electrode 105 and described public electrode 104 can adopt a kind of in tin indium oxide (ITO) for example or indium zinc oxide (IZO) or indium oxide gallium (IGO) or combine.
So far, shown in Fig. 9 g and Fig. 4, the pixel cell obtaining by described manufacture method, its storage capacitance region 106 has just formed the storage capacitor construction consisting of top electrode 115, target 114 and bottom electrode 110.
In addition, in the above embodiment of the present invention, the material of described the first conductive layer, the second conductive layer just illustrates, as long as can play electric action, can be also other conductive layer, as the metal oxide that can conduct electricity, organic substance etc.
Although the present invention discloses as above with preferred embodiment, the present invention is not defined in this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, so protection scope of the present invention should be as the criterion with claim limited range.
Claims (20)
1. a pixel cell, be applied in coplane conversion type liquid crystal display device, by being disposed on substrate, adjacent scanning lines and data wire intersected with each other define, described scan line is positioned at the first conductive layer on substrate, second conductive layer of described data line bit on substrate, described the second conductive layer is positioned at described the first conductive layer top, and described pixel cell comprises:
Be disposed at the transistor on described substrate, described transistorized grid is connected with described scan line, and described transistorized source electrode is connected with described data wire, and described transistorized drain electrode is connected with pixel electrode;
Pixel electrode, comprises along the part of data wire direction, and described pixel electrode along the part of data wire direction between adjacent data line;
Public electrode, comprises along the part of data wire direction, for producing with described pixel electrode the electric field that is parallel to described substrate;
And storage capacitance, it is characterized in that,
Described storage capacitance consists of bottom electrode, target, top electrode and each interelectrode dielectric layer, and the bottom electrode of described storage capacitance, target, top electrode lay respectively at the first conductive layer, the second conductive layer, the 3rd conductive layer;
Described pixel cell also comprises shield bars, and described shield bars covers completely between adjacent data line and by described pixel electrode; Described shield bars is positioned at described the second conductive layer.
2. pixel cell as claimed in claim 1, is characterized in that, described shield bars and described bottom electrode are electrically connected.
3. pixel cell as claimed in claim 1, is characterized in that, described shield bars is connected by contact hole with described public electrode.
4. pixel cell as claimed in claim 1, is characterized in that, described shield bars and described target are electrically connected.
5. pixel cell as claimed in claim 1, is characterized in that, described data wire, pixel electrode and shield bars be shaped as waveform or herringbone.
6. pixel cell as claimed in claim 1, is characterized in that, also comprises shading strip, and described shading strip is positioned at described the first conductive layer.
7. pixel cell as claimed in claim 6, is characterized in that, the figure of described shading strip and described data wire and described public electrode all has overlapping.
8. pixel cell as claimed in claim 6, is characterized in that, described shading strip is connected by contact hole with described pixel electrode.
9. pixel cell as claimed in claim 1, is characterized in that, also comprises shading strip, and described shading strip is positioned at described the second conductive layer.
10. pixel cell as claimed in claim 9, is characterized in that, the figure of described shading strip and described public electrode has overlapping.
11. pixel cells as claimed in claim 9, is characterized in that, described shading strip is connected by contact hole with described pixel electrode.
12. pixel cells as claimed in claim 1, is characterized in that, the dielectric layer between described bottom electrode and target comprises: gate insulation layer and semiconductor layer.
13. pixel cells as claimed in claim 1, is characterized in that, the dielectric layer between described target and top electrode is protection insulating barrier.
14. 1 kinds of coplane conversion type liquid crystal display devices that comprise the pixel cell described in claim 1 to 4,6 to 13 any one.
The manufacture method of 15. 1 kinds of pixel cells, described pixel cell is applied to, in coplane conversion type liquid crystal display device, it is characterized in that, comprises:
On substrate, form the first conductive layer, and form scan line in the first conductive layer;
On described the first conductive layer, form first medium layer;
On described first medium layer, form the second conductive layer, and form data wire in the second conductive layer;
On described the second conductive layer, form second medium layer;
On described second medium layer, form the 3rd conductive layer, and form pixel electrode in the 3rd conductive layer, described pixel electrode comprises along the part of data wire direction, and described pixel electrode along the part of data wire direction between adjacent data line;
When forming described pixel electrode, also form public electrode, described public electrode is comprised along the part of data wire direction, for producing with described pixel electrode the electric field that is parallel to described substrate;
Wherein, the common corresponding surface of described the first conductive layer, the second conductive layer and the 3rd conductive layer forms respectively bottom electrode, target and the top electrode of storage capacitance;
Described manufacture method also comprised formation shield bars before forming pixel electrode, and the step that forms shield bars comprises: while forming data wire in the second conductive layer, in the second conductive layer, form shield bars, make described shield bars between adjacent data line; When forming pixel electrode, make described pixel electrode cover described shield bars completely.
The manufacture method of 16. pixel cells as claimed in claim 15, is characterized in that, also comprises: described shield bars and described bottom electrode are electrically connected.
The manufacture method of 17. pixel cells as claimed in claim 15, is characterized in that, also comprises: described shield bars and described target are electrically connected.
The manufacture method of 18. pixel cells as claimed in claim 15, is characterized in that, described data wire, pixel electrode and shield bars be shaped as waveform or herringbone.
The manufacture method of 19. pixel cells as claimed in claim 15, is characterized in that, also comprises: while forming scan line in the first conductive layer, also form shading strip, make the figure of described shading strip and described public electrode have overlapping.
The manufacture method of the coplane conversion type liquid crystal display device of 20. 1 kinds of manufacture methods that comprise the pixel cell described in claim 15 to 17,19 any one.
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| CN103488012B (en) * | 2012-06-08 | 2016-02-17 | 瀚宇彩晶股份有限公司 | The method for making of dot structure, dot structure and active elements array substrates |
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| CN105931987A (en) * | 2016-05-27 | 2016-09-07 | 京东方科技集团股份有限公司 | Display substrate, preparation method of display substrate, display panel and display device |
| CN106252356B (en) * | 2016-08-12 | 2019-01-04 | 武汉华星光电技术有限公司 | A kind of array substrate and display panel |
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