CN102479750B - 一种化学机械平坦化的方法 - Google Patents
一种化学机械平坦化的方法 Download PDFInfo
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- CN102479750B CN102479750B CN201010571662.6A CN201010571662A CN102479750B CN 102479750 B CN102479750 B CN 102479750B CN 201010571662 A CN201010571662 A CN 201010571662A CN 102479750 B CN102479750 B CN 102479750B
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- 238000000034 method Methods 0.000 title claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910004200 TaSiN Inorganic materials 0.000 claims description 2
- 229910008482 TiSiN Inorganic materials 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 claims description 2
- 229910010038 TiAl Inorganic materials 0.000 claims 1
- 238000005452 bending Methods 0.000 abstract description 7
- 230000009467 reduction Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 62
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
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Priority Applications (1)
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CN201010571662.6A CN102479750B (zh) | 2010-11-29 | 2010-11-29 | 一种化学机械平坦化的方法 |
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CN201010571662.6A CN102479750B (zh) | 2010-11-29 | 2010-11-29 | 一种化学机械平坦化的方法 |
Publications (2)
Publication Number | Publication Date |
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CN102479750A CN102479750A (zh) | 2012-05-30 |
CN102479750B true CN102479750B (zh) | 2015-12-16 |
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CN201010571662.6A Active CN102479750B (zh) | 2010-11-29 | 2010-11-29 | 一种化学机械平坦化的方法 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1227402A (zh) * | 1998-02-26 | 1999-09-01 | 联华电子股份有限公司 | 阻挡层及其制造方法 |
CN1541415A (zh) * | 2001-01-24 | 2004-10-27 | �����ɷ� | 微影对准设计及cmp加工波纹表面覆盖量测记号 |
CN101026107A (zh) * | 2006-02-24 | 2007-08-29 | 日月光半导体制造股份有限公司 | 晶圆级封装的凸块制造方法 |
CN101106208A (zh) * | 2006-07-14 | 2008-01-16 | 台湾积体电路制造股份有限公司 | 半导体集成电路中的波导以及电磁波屏蔽 |
-
2010
- 2010-11-29 CN CN201010571662.6A patent/CN102479750B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1227402A (zh) * | 1998-02-26 | 1999-09-01 | 联华电子股份有限公司 | 阻挡层及其制造方法 |
CN1541415A (zh) * | 2001-01-24 | 2004-10-27 | �����ɷ� | 微影对准设计及cmp加工波纹表面覆盖量测记号 |
CN101026107A (zh) * | 2006-02-24 | 2007-08-29 | 日月光半导体制造股份有限公司 | 晶圆级封装的凸块制造方法 |
CN101106208A (zh) * | 2006-07-14 | 2008-01-16 | 台湾积体电路制造股份有限公司 | 半导体集成电路中的波导以及电磁波屏蔽 |
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CN102479750A (zh) | 2012-05-30 |
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Address after: No. 3, North Tu Cheng West Road, Chaoyang District, Beijing Co-patentee after: BEIJING NAURA MICROELECTRONICS EQUIPMENT Co.,Ltd. Patentee after: Institute of Microelectronics of the Chinese Academy of Sciences Address before: No. 3, North Tu Cheng West Road, Chaoyang District, Beijing Co-patentee before: BEIJING NMC Co.,Ltd. Patentee before: Institute of Microelectronics of the Chinese Academy of Sciences |
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Effective date of registration: 20190225 Address after: 100176 Beijing Daxing District Beijing economic and Technological Development Zone Wenchang Road 8 Patentee after: BEIJING NAURA MICROELECTRONICS EQUIPMENT Co.,Ltd. Address before: No. 3, North Tu Cheng West Road, Chaoyang District, Beijing Co-patentee before: BEIJING NAURA MICROELECTRONICS EQUIPMENT Co.,Ltd. Patentee before: Institute of Microelectronics of the Chinese Academy of Sciences |