CN102471069A - 石墨烯器件和制造石墨烯器件的方法 - Google Patents

石墨烯器件和制造石墨烯器件的方法 Download PDF

Info

Publication number
CN102471069A
CN102471069A CN2010800298468A CN201080029846A CN102471069A CN 102471069 A CN102471069 A CN 102471069A CN 2010800298468 A CN2010800298468 A CN 2010800298468A CN 201080029846 A CN201080029846 A CN 201080029846A CN 102471069 A CN102471069 A CN 102471069A
Authority
CN
China
Prior art keywords
graphene
electrodes
graphite alkene
porous graphite
graphene electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN2010800298468A
Other languages
English (en)
Other versions
CN102471069B (zh
Inventor
A·M·卡凯南
S·哈奎
A·库利
P·M·帕萨南
L·M·J·卡凯南
M·A·雨西塔洛
R·K·勒蒂涅米
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nokia Technologies Oy
Original Assignee
Nokia Oyj
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nokia Oyj filed Critical Nokia Oyj
Publication of CN102471069A publication Critical patent/CN102471069A/zh
Application granted granted Critical
Publication of CN102471069B publication Critical patent/CN102471069B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1606—Graphene
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02527—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
    • H01L21/042—Changing their shape, e.g. forming recesses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66015—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene
    • H01L29/66022—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66439—Unipolar field-effect transistors with a one- or zero-dimensional channel, e.g. quantum wire FET, in-plane gate transistor [IPG], single electron transistor [SET], striped channel transistor, Coulomb blockade transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/775—Field effect transistors with one dimensional charge carrier gas channel, e.g. quantum wire FET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7781—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with inverted single heterostructure, i.e. with active layer formed on top of wide bandgap layer, e.g. IHEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24058—Structurally defined web or sheet [e.g., overall dimension, etc.] including grain, strips, or filamentary elements in respective layers or components in angular relation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

根据本发明的示例实施方式，一种器件包括一个或多个多孔石墨烯层，每个石墨烯多孔层包括多个细孔。该器件可以形成柔性的、和/或可伸展的、和/或透明电子器件中的至少一部分。

Description

石墨烯器件和制造石墨烯器件的方法
技术领域
本申请总体涉及包括石墨烯的器件以及用于制造包括石墨烯的器件的方法。
背景技术
石墨烯是由sp2键合的碳原子密集堆积成蜂窝状晶格而形成的一个原子厚的平面片。可以将石墨烯看成由碳原子及其化学键构成的原子尺度的丝网。石墨烯展现出在其他材料中未发现的、新类型的基本物理特性。从器件角度而言，最为感兴趣的是具有弹道输运的高电荷载流子迁移率、高电流密度、高热导率以及控制电特性的可能性。在2004年，通过对石墨块体的机械剥离，能证实地分离出单石墨烯片，该石墨烯片是真实二维的、原子厚度的碳晶体。近来已发现可以制造石墨烯片。这些石墨烯片是良好的导体，例如是硅MOSFET的约20倍。
已对例如由碳纳米管或硅纳米线制成的纳米线网络进行了多年的研究。然而，这些网络因网络内的高电阻线到线连接而具有相当低的传导率。
发明内容
本发明的示例的各个方面在权利要求书中进行阐述。
根据本发明的第一方面，一种器件包括多孔石墨烯层，该多孔石墨烯层包括多个细孔(pore)。
该器件可以包括具有介于1％和99％之间的孔隙率的多孔石墨烯层。多孔石墨烯层可以包括纳米带，该纳米带具有介于0.1nm和20nm之间的宽度。多孔石墨烯层可以具有如下的孔隙率，该孔隙率使得并且被配置成使得多孔石墨烯层是半导体。该器件可以包括衬底，其中多孔石墨烯层定位在衬底上。衬底可以被配置成使得其是柔性的或可伸展的。该器件可以包括衬底，并且多孔石墨烯层可以覆盖衬底上的介于1μm2和10cm2之间的面积。多孔石墨烯层可以包括单原子多孔石墨烯层。该器件可以包括石墨烯电极，该石墨烯电极具有连续的石墨烯层，该连续的石墨烯层具有介于1μm2和10cm2之间的面积。
根据本发明的第二方面，一种方法包括：蚀刻石墨烯层，以及使用纳米线掩膜抑制所述蚀刻。
根据本发明的第三方面，一种电子器件包括：
第一石墨烯电极；
第二石墨烯电极；
石墨烯半导体；以及
电源，
其中所述石墨烯半导体、所述第一石墨烯电极以及所述第二石墨烯电极被配置成使得通过电源在第一石墨烯电极中的第一位置和第二石墨烯电极中的第二位置之间的电流供应在第一位置和第二位置之间建立电势差，并且使得电势差随着第一位置或第二位置的变化而保持为实质上恒定。
根据本发明的第四方面，一种电子器件包括第一石墨烯电极、第二石墨烯电极、石墨烯半导体以及电源，该石墨烯半导体、该第一石墨烯电极以及该第二石墨烯电极均被配置成使得通过电源在第一石墨烯电极中的第一点和第二石墨烯电极中的第二点之间的电流供应在所述点之间建立电势差，并且使得在第一石墨烯电极两端实质上不存在电势差，并且在第二石墨烯电极两端实质上不存在电势差。
根据本发明的第五方面，一种在第一石墨烯电极中的第一点和第二石墨烯电极中的第二点之间施加电势差的方法包括：
将石墨烯半导体定位于两个电极之间；
(ii)使得电流通过石墨烯半导体并且在第一点和第二点之间通过，从而使得在第一点和第二点之间建立电势差，并且使得在第一石墨烯电极两端实质上不存在电势差，并且在第二石墨烯电极两端实质上不存在电势差。
附图说明
为了更为完整地理解本发明的示例实施方式，现在参考下面结合所附附图的描述，其中：
图1显示了根据本发明的一个方面的用于制造器件的工艺；
图2显示了用于图1工艺中的阶段之一的两种变体；以及
图3显示了根据本发明的一个方面的器件。
具体实施方式
通过参考附图中的图1至图3来理解本发明的示例实施方式及其潜在优势。
图1显示了根据本发明一个方面的制造工艺。初始步骤1是在衬底11上沉积石墨烯层12。在US20090110627中描述了用于实施该沉积的一个示例工艺。石墨烯沉积工艺包括：形成石墨化催化剂；在存在石墨化催化剂的情形下热处理气态碳源以形成石墨烯；以及冷却石墨烯以形成石墨烯层12。
气态碳源可以包括具有含1至7个碳原子的分子的化合物，该气态碳源可以包括选自如下的化合物：一氧化碳、乙烷、乙烯、乙醇、乙炔、丙烷、丙烯、丁烷、丁二烯、戊烷、戊烯、环戊二烯、己烷、环己烷、苯、甲苯、甲烷，以及包括前述化合物中至少一种的组合。
热处理可以以介于300℃至约2000℃之间的温度执行约0.001小时至约1000小时。石墨化催化剂可以包括Ni、Co、Fe、Pt、Au、Al、Cr、Cu、Mg、Mn、Mo、Rh、Si、Ta、Ti、W、U、V、Zr或它们的任意组合。还进一步与气态碳源一起供应氢。
通过如Alfonso Reina等人在Nano Letters，9(1)，30-35(2009)中描述的化学汽相沉积，或通过如Stankovich，S.等人在Carbon 2007，45(7)，1558-1565中描述的经剥离的石墨氧化物的化学还原来制造石墨烯膜12。
一旦已沉积了石墨烯层12，则可以在步骤2处在石墨烯层12上通过使用氢倍半硅氧烷(HSQ)抗蚀剂的电子束光刻来制造连续的掩膜16，如Zhihong Chen等人在“Semiconducting Graphene RibbonTransistor”，IEEE Xplore，第265页-第266页中描述的那样。备选地，一旦已沉积石墨烯层12，则可以在步骤2处在石墨烯层12上通过旋涂工艺使用氢倍半硅氧烷(HSQ)沉积来制造连续的掩膜16。在US 6,232,662中描述了该工艺的示例。
一旦已经沉积了连续的掩膜16，则在步骤3a处沉积纳米线掩膜14。纳米线掩膜包括纳米线，诸如可以被随机定向的硅纳米线。步骤3a可以包括在牺牲衬底上制造硅纳米线以及通过机械接触压力将硅纳米线传送至石墨烯层12上。A.Javey等人在Nano Lett.2007，7，773中描述了步骤3a的示例。纳米线沉积的备选方法是：旋模(spin casting)、喷墨印刷、剪切力接触印刷或纳米线悬浮(nanowiresuspension)，如Alan Coli等人在“Nanowire lithography on silicon”，Nano Lett，Vol 8，No 5，2008，第1358页至第1362页中描述的。
一旦已经沉积了纳米线掩膜14，则在步骤4处通过蚀刻移除不在连续的掩膜或纳米线掩膜14之下的石墨烯。这可以例如通过在反应离子蚀刻装置中使用氧等离子体来实施。B.Ozyilmaz等人在Appl.Phys.Lett.91，192107(2007)中描述了蚀刻的一个示例。
一旦完成了步骤4，则在步骤5处移除连续的掩膜16，步骤5包括反应离子蚀刻的工艺。在US 6,211,063中描述了该工艺的示例。例如Yue Wu等人在“Single-crystal metallic nanowires andmetal/semiconductor nanowire heterostructures”，Nature，Vol 430，2004年7月1日，第61至第65页中描述的那样，通过使用氟化氢溶液来移除纳米线掩膜。
移除部分石墨烯层12导致形成具有多个细孔的多孔石墨烯层15，该细孔可以对应于纳米线在纳米线掩膜14中的位置。多孔石墨烯层15可以包括许多石墨烯纳米带，每个纳米带具有最小的尺度，该最小的尺度在衬底平面中测量为介于1nm至20nm之间。一些石墨烯纳米带可以是填隙式纳米带，每个填隙式纳米带定位成介于在石墨烯层15中形成的至少两个细孔之间。
根据本发明的又一方面，可以重复在图1中显示的工艺，例外之处在于步骤3，可以由备选的步骤3b替换步骤3。在图2中显示了步骤3a和步骤3b。步骤3a与图1中的步骤3相同。步骤3b与步骤3a不同之处在于在连续的掩膜16的邻近施加电场，从而沉积对准的纳米线掩膜14b。经对准的纳米线掩膜14b包括通过电场的存在而对准的纳米线。
包括一个或多个石墨烯带的组件的电特性可以通过改变一个带或一些带的宽度而更改。组件基于该宽度可以是半导体或金属导体。
图3显示了通过运用图1的工艺，或者通过该工艺的变体(部分地在图2中描绘)来制造的器件。器件31包括电源32、第一石墨烯电极17以及第二石墨烯电极18。该器件还包括石墨烯半导体15，该石墨烯半导体15介于第一石墨烯电极17和第二石墨烯电极18之间并与第一石墨烯电极17和第二石墨烯电极18电接触。已表明，当石墨烯被限制为纳米带时，石墨烯从半金属化变化为半传导材料，石墨烯半导体15因而包括这样的纳米带。在第一石墨烯电极17中的第一点37和第二石墨烯电极18中的第二点38之间施加电势差，并且电流在第一点37和第二点38之间经过石墨烯半导体15，从而在第一点和第二点之间建立电势差，并且使得在第一石墨烯电极17两端实质上不存在电势差以及在第二石墨烯18两端实质上不存在电势差。换言之，电势差随着第一位置或第二位置的变化而保持恒定。石墨烯电极17、18以及石墨烯半导体15可以具有低的吸收系数和/或可以是柔性的和/或可伸展的。图3中的器件31因而可以至少部分地是柔性的和/或可伸展的，并且通过其组件的一些至少部分地传输光。图3中的器件的修改可以包括栅极电极，该栅极电极被布置为介于电极17和电极18之间并与半导体15接触，可以对该栅极电极施加电势，从而使得该修改可以形成场效应晶体管的一部分。
不以任何方式限制下面出现的权利要求书的范围、解读或应用，在此公开的示例实施方式中的一个或多个的技术效果可以是制造大表面面积的石墨烯层。在此公开的示例实施方式中的一个或多个的另一技术效果可以是制造透明电子器件。在此公开的示例实施方式中的一个或多个的另一技术效果可以是制造柔性的和/或可伸展的电子器件。又一技术优势可以是高的电荷载流子迁移率。又一优势可以是弹道输运、高的电流密度、高的热导率、以及控制电特性的可能性中的至少一种。
如果期望，则可以以不同的顺序和/或彼此并行地执行在此论述的不同功能。此外，如果期望，则上述功能中的一个或多个可以是可选的或可以是组合的。
虽然在独立权利要求中阐述了本发明的各种方面，但是本发明的其他一些方面包括来自所描述的实施方式和/或具有独立权利要求的特征的从属权利要求的特征的其他组合，而并非仅是在权利要求书中明确阐述的组合。
在此还注意到虽然上面描述了本发明的示例实施方式，但是这些描述不应被视为限制性的。而是，在不偏离本发明的所附权利要求中限定的范围的前提下可以做出若干变化和修改。

Claims (20)

1.一种器件，包括多孔石墨烯层，所述多孔石墨烯层包括多个细孔。
2.根据权利要求1所述的器件，包括多个多孔石墨烯层。
3.根据权利要求1所述的器件，其中所述多孔石墨烯层包括石墨烯带。
4.根据权利要求3所述的器件，其中所述多孔石墨烯层包括多个石墨烯带。
5.根据权利要求3所述的器件，其中所述多孔石墨烯层包括多个石墨烯带，所述石墨烯带被配置成基本对准。
6.根据权利要求3所述的器件，其中所述石墨烯带包括石墨烯纳米带。
7.根据权利要求6所述的器件，其中所述多孔石墨烯层包括多个石墨烯纳米带。
8.根据权利要求1所述的器件，其中所述器件包括石墨烯电极。
9.根据权利要求8所述的器件，其中所述器件包括多个石墨烯电极。
10.根据权利要求8所述的器件，其中所述石墨烯电极包括石墨烯导体。
11.根据权利要求8所述的器件，其中所述石墨烯电极表面面积的至少90％被配置成与绝缘体接触。
12.根据权利要求8所述的器件，其中所述石墨烯电极包括连续的石墨烯层。
13.根据权利要求9所述的器件，其中所述多孔石墨烯层电连接所述石墨烯电极中的两个。
14.根据权利要求9所述的器件，其中所述多孔石墨烯层电连接所述石墨烯电极中的每一个。
15.一种方法，包括：蚀刻石墨烯层，以及使用纳米线掩膜抑制所述蚀刻。
16.根据权利要求15所述的方法，其中所述方法包括在所述石墨烯层上沉积多个纳米线以形成所述纳米线掩膜。
17.根据权利要求15所述的方法，所述纳米线掩膜包括硅或氧化硅。
18.根据权利要求15所述的方法，其中所述方法包括在所述蚀刻之后实质上移除所有的纳米线掩膜。
19.一种电子器件，包括：
第一石墨烯电极，
第二石墨烯电极，
石墨烯半导体，以及
电源，
其中所述石墨烯半导体、所述第一石墨烯电极以及所述第二石墨烯电极被配置成使得通过所述电源在所述第一石墨烯电极中的第一位置和所述第二石墨烯电极中的第二位置之间的电流供应在所述第一位置和所述第二位置之间建立电势差，并且使得所述电势差随着所述第一位置和所述第二位置的变化而保持实质上恒定。
20.根据权利要求19所述的电子器件，其中所述石墨烯半导体包括石墨烯纳米带，其中所述纳米带具有介于0.1nm和20nm之间的宽度。
CN201080029846.8A 2009-06-30 2010-06-15 石墨烯器件和制造石墨烯器件的方法 Active CN102471069B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/495,098 US9035281B2 (en) 2009-06-30 2009-06-30 Graphene device and method of fabricating a graphene device
US12/495,098 2009-06-30
PCT/IB2010/001453 WO2011001240A1 (en) 2009-06-30 2010-06-15 Graphene device and method of fabricating a graphene device

Publications (2)

Publication Number Publication Date
CN102471069A true CN102471069A (zh) 2012-05-23
CN102471069B CN102471069B (zh) 2016-01-20

Family

ID=43380016

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080029846.8A Active CN102471069B (zh) 2009-06-30 2010-06-15 石墨烯器件和制造石墨烯器件的方法

Country Status (6)

Country Link
US (2) US9035281B2 (zh)
EP (1) EP2448863B1 (zh)
CN (1) CN102471069B (zh)
CA (1) CA2766085C (zh)
RU (1) RU2511127C2 (zh)
WO (1) WO2011001240A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107200317A (zh) * 2017-04-14 2017-09-26 北京航空航天大学 一种基于激光制备多孔结构石墨烯的方法

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101144287B1 (ko) 2011-02-28 2012-05-11 고려대학교 산학협력단 나노선을 포함하는 전자소자의 제조방법
JP5770671B2 (ja) * 2011-04-07 2015-08-26 日本電信電話株式会社 電界効果トランジスタ、製造用基板、およびその製造方法
US8823089B2 (en) * 2011-04-15 2014-09-02 Infineon Technologies Ag SiC semiconductor power device
US20120261644A1 (en) * 2011-04-18 2012-10-18 International Business Machines Corporation Structure and method of making graphene nanoribbons
GB2491366A (en) 2011-05-31 2012-12-05 Nokia Corp A configurable microphone or loudspeaker apparatus
KR102023754B1 (ko) * 2011-07-27 2019-09-20 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 생체분자 특성규명용 나노포어 센서
US20130115453A1 (en) * 2011-11-03 2013-05-09 Nanyang Technological University Hybrid nanostructure, a method for forming the hybrid nanostructure, and an electrode including a plurality of the hybrid nanostructures
US9202945B2 (en) * 2011-12-23 2015-12-01 Nokia Technologies Oy Graphene-based MIM diode and associated methods
CN103219089B (zh) * 2012-01-18 2016-01-06 中国科学院上海硅酸盐研究所 多孔石墨烯或石墨烯/多孔复合陶瓷导电材料及其制备方法
CN103359723B (zh) * 2012-04-05 2015-01-21 清华大学 石墨烯纳米窄带的制备方法
CN103359721B (zh) 2012-04-05 2015-03-11 清华大学 石墨烯纳米窄带的制备方法
CN103359718B (zh) * 2012-04-05 2015-07-01 清华大学 石墨烯纳米窄带的制备方法
CN103359722B (zh) 2012-04-05 2015-01-21 清华大学 石墨烯纳米窄带的制备方法
CN103359717B (zh) * 2012-04-05 2015-06-03 清华大学 石墨烯纳米窄带的制备方法
US8911931B2 (en) * 2012-07-18 2014-12-16 Lockheed Martin Corporation Spiral design graphene nanoribbon
US8685844B2 (en) 2012-08-15 2014-04-01 International Business Machines Corporation Sub-10 nm graphene nanoribbon lattices
EP3221910A4 (en) * 2014-11-17 2018-10-24 Imagine Intelligent Materials Ltd Graphene electrode
US9997784B2 (en) * 2016-10-06 2018-06-12 Nanotek Instruments, Inc. Lithium ion battery anode containing silicon nanowires grown in situ in pores of graphene foam and production process
CN110933782A (zh) * 2019-10-21 2020-03-27 珠海烯蟀科技有限公司 柔性石墨烯电极作为高硼硅石墨烯导电层的方法及装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101385126A (zh) * 2006-02-16 2009-03-11 卢森特技术有限公司 包括外延生长在单晶衬底上的石墨烯层的器件
WO2009029984A1 (en) * 2007-09-03 2009-03-12 Newsouth Innovations Pty Limited Graphene

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2077095C1 (ru) 1995-02-02 1997-04-10 Владимир Владимирович Бекеш Газодиффузионный электрод
RU2119276C1 (ru) * 1997-11-03 1998-09-20 Закрытое акционерное общество "Техно-ТМ" Трехмерный гибкий электронный модуль
US6232662B1 (en) * 1998-07-14 2001-05-15 Texas Instruments Incorporated System and method for bonding over active integrated circuits
US6211063B1 (en) * 1999-05-25 2001-04-03 Taiwan Semiconductor Manufacturing Company Method to fabricate self-aligned dual damascene structures
NO20015837A (no) 2001-11-29 2003-05-12 Hans Gude Gudesen Fremgangsmåte til fremstilling av selvregistrerende ikke-litografiske transistorer med ultrakorte kanallengder
WO2005019104A2 (en) * 2003-08-18 2005-03-03 President And Fellows Of Harvard College Controlled nanotube fabrication and uses
US7521292B2 (en) * 2004-06-04 2009-04-21 The Board Of Trustees Of The University Of Illinois Stretchable form of single crystal silicon for high performance electronics on rubber substrates
US8168964B2 (en) * 2007-03-02 2012-05-01 Nec Corporation Semiconductor device using graphene and method of manufacturing the same
US20080220154A1 (en) * 2007-03-06 2008-09-11 Gallagher Emerson R Method of forming fluid flow field plates for electrochemical devices
EP2195648B1 (en) 2007-09-12 2019-05-08 President and Fellows of Harvard College High-resolution molecular graphene sensor comprising an aperture in the graphene layer
KR100923304B1 (ko) * 2007-10-29 2009-10-23 삼성전자주식회사 그라펜 시트 및 그의 제조방법
RU2367595C2 (ru) * 2007-11-28 2009-09-20 Институт катализа им. Г.К. Борескова Сибирского отделения Российской академии наук (статус государственного учреждения) Пористый углеродный наноматериал и способ его приготовления
US7605408B1 (en) * 2008-04-25 2009-10-20 Nokia Corporation Apparatus, method and system for reconfigurable circuitry

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101385126A (zh) * 2006-02-16 2009-03-11 卢森特技术有限公司 包括外延生长在单晶衬底上的石墨烯层的器件
WO2009029984A1 (en) * 2007-09-03 2009-03-12 Newsouth Innovations Pty Limited Graphene

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107200317A (zh) * 2017-04-14 2017-09-26 北京航空航天大学 一种基于激光制备多孔结构石墨烯的方法

Also Published As

Publication number Publication date
RU2012101496A (ru) 2013-08-10
RU2511127C2 (ru) 2014-04-10
US9035281B2 (en) 2015-05-19
EP2448863B1 (en) 2021-07-21
US20100327956A1 (en) 2010-12-30
US10020365B2 (en) 2018-07-10
US20150287787A1 (en) 2015-10-08
EP2448863A1 (en) 2012-05-09
WO2011001240A1 (en) 2011-01-06
CA2766085C (en) 2014-10-14
CA2766085A1 (en) 2011-01-06
CN102471069B (zh) 2016-01-20
EP2448863A4 (en) 2014-07-16

Similar Documents

Publication Publication Date Title
CN102471069B (zh) 石墨烯器件和制造石墨烯器件的方法
KR101910976B1 (ko) 그래핀을 이용한 전계효과 트랜지스터
US20220093772A1 (en) Graphene/nanostructure fet with self-aligned contact and gate
EP2393107B1 (en) Field effect transistor manufacturing method and semiconductor graphene oxide manufacturing method
JP5353009B2 (ja) 半導体装置の製造方法および半導体装置
EP3379579B1 (en) Semiconductor device and method of manufacturing the same
Kedzierski et al. Graphene-on-insulator transistors made using C on Ni chemical-vapor deposition
US8482126B2 (en) Semiconductor device
US8193032B2 (en) Ultrathin spacer formation for carbon-based FET
KR101298789B1 (ko) 반도체 장치
JP5590125B2 (ja) 半導体装置の製造方法
JP2012212877A (ja) 電子デバイス及びその製造方法
CN104810254A (zh) 用于石墨烯部分的电气接触
JP2018172237A (ja) グラフェンナノリボン及びその製造に用いる前駆体分子
CN112447908A (zh) 半导体器件及其形成方法
KR102154526B1 (ko) 그래핀 필름 및 그 제조 방법
Kondo et al. Low-Temperature Synthesis of Graphene and Fabrication of Top-Gated Field-Effect Transistors Using Transfer-Free Processes for Future LSIs
CN104934300A (zh) 半导体装置及其制造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20160204

Address after: Espoo, Finland

Patentee after: Technology Co., Ltd. of Nokia

Address before: Espoo, Finland

Patentee before: Nokia Oyj