CN102468119B - 在晶圆上快速选取失效晶粒的薄膜及使用方法 - Google Patents
在晶圆上快速选取失效晶粒的薄膜及使用方法 Download PDFInfo
- Publication number
- CN102468119B CN102468119B CN 201010551163 CN201010551163A CN102468119B CN 102468119 B CN102468119 B CN 102468119B CN 201010551163 CN201010551163 CN 201010551163 CN 201010551163 A CN201010551163 A CN 201010551163A CN 102468119 B CN102468119 B CN 102468119B
- Authority
- CN
- China
- Prior art keywords
- wafer
- film
- mark
- thin film
- crystal grain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201010551163 CN102468119B (zh) | 2010-11-19 | 2010-11-19 | 在晶圆上快速选取失效晶粒的薄膜及使用方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201010551163 CN102468119B (zh) | 2010-11-19 | 2010-11-19 | 在晶圆上快速选取失效晶粒的薄膜及使用方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102468119A CN102468119A (zh) | 2012-05-23 |
CN102468119B true CN102468119B (zh) | 2013-12-18 |
Family
ID=46071610
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 201010551163 Active CN102468119B (zh) | 2010-11-19 | 2010-11-19 | 在晶圆上快速选取失效晶粒的薄膜及使用方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN102468119B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107481951B (zh) * | 2017-08-17 | 2019-10-18 | 安徽三安光电有限公司 | 一种筛选异常晶粒的方法 |
CN111816599B (zh) * | 2020-07-14 | 2021-05-18 | 长江存储科技有限责任公司 | 晶粒定位器及晶粒的定位方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05343517A (ja) * | 1992-06-10 | 1993-12-24 | Hitachi Ltd | ダイソータテープ |
CN1084526C (zh) * | 1997-10-21 | 2002-05-08 | 研能科技股份有限公司 | 图形加工对位法 |
JP4570719B2 (ja) * | 2000-01-25 | 2010-10-27 | セイコーインスツル株式会社 | 半導体選別装置 |
JP2006148013A (ja) * | 2004-11-24 | 2006-06-08 | Nikon Corp | 位置合わせ方法及び露光方法 |
-
2010
- 2010-11-19 CN CN 201010551163 patent/CN102468119B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN102468119A (zh) | 2012-05-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100416789C (zh) | 将在第一衬底上的芯片排列在第二和第三衬底上的方法 | |
CN102696093B (zh) | 包含视觉系统的晶片装卸器 | |
CN102640253B (zh) | 分立组件后向可追溯性和半导体装置前向可追溯性 | |
CN102656668B (zh) | 有效晶圆布局的偏移场网格 | |
CN103698932A (zh) | 显示面板母板及其制造方法 | |
CN104022050A (zh) | 一种晶圆批次中重复位置缺陷的检测方法 | |
CN104526758B (zh) | 一种控制pcb板钻孔定位精度的方法 | |
CN102468119B (zh) | 在晶圆上快速选取失效晶粒的薄膜及使用方法 | |
CN102103336A (zh) | 基于机器视觉对准的高精度对准标记结构 | |
CN109856843B (zh) | 显示面板母板、显示面板及其检测方法 | |
CN203434131U (zh) | 芯片定位模板 | |
CN103531498B (zh) | 晶圆缺陷分析系统 | |
CN103038890A (zh) | 用于标记太阳能电池的方法及太阳能电池 | |
CN102799062A (zh) | 一种掩膜版、晶圆和测机方法 | |
CN102566322A (zh) | 一种多台光刻设备校正方法 | |
CN203136321U (zh) | 对位装置及印刷电路板 | |
CN112579540A (zh) | 元器件贴装位置标识方法、贴装控制方法、设备和介质 | |
CN103646885A (zh) | 一种减小电子显微镜观察晶圆缺陷误差的方法 | |
CN202093317U (zh) | 基于机器视觉对准的高精度对准标记结构 | |
CN102789133B (zh) | 一种显影后检查方法 | |
CN111816599B (zh) | 晶粒定位器及晶粒的定位方法 | |
CN101399251B (zh) | 存储器的布局方法和结构 | |
CN201787873U (zh) | 一种用于菲林检查的标准模板 | |
CN114146955A (zh) | 一种led晶粒的排列方法、成品方片 | |
CN102891105A (zh) | 一种薄膜晶体管阵列的制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140102 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
|
TR01 | Transfer of patent right |
Effective date of registration: 20140102 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |