CN102446869A - Diode - Google Patents
Diode Download PDFInfo
- Publication number
- CN102446869A CN102446869A CN2010102978951A CN201010297895A CN102446869A CN 102446869 A CN102446869 A CN 102446869A CN 2010102978951 A CN2010102978951 A CN 2010102978951A CN 201010297895 A CN201010297895 A CN 201010297895A CN 102446869 A CN102446869 A CN 102446869A
- Authority
- CN
- China
- Prior art keywords
- diode
- oxygen
- schottky chip
- free copper
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention relates to a diode. The diode is characterized by comprising a Schottky chip, wherein two oxygen-free copper wires are respectively welded on two ends of the Schottky chip; and the Schottky chip and the oxygen-free copper wires are packaged in a square epoxy moulding plastic block by adopting an injection molding packaging manner, and the connecting ends of each oxygen-free copper wire stretch out the square epoxy moulding plastic block. The diode provided by the invention has the advantages of more reasonable structure, small volume and low material consumption, and is particularly suitable for being arranged in a smaller space. The diode provided by the invention is manufactured by adopting a welding and injection molding packaging method, thus an acid washing and rubberizing process is canceled, and the environmental pollution in a manufacturing process is avoided; meanwhile, the production cycle of a product is greatly shortened, and the production efficiency of the product is improved; and further the low forward voltage drop Schottky chip is adopted, the self power consumption of the device is effectively reduced. The diode provided by the invention can be broadly used in microwave mixing, detection and switching circuits.
Description
Technical field
The present invention relates to a kind of semiconductor device, particularly a kind of semiconductor diode.
Background technology
Common diode is made up of Schottky diode chip and pin, and its plastic packaging is processed in columned epoxy film plastics.Its defective is: its forward voltage drop is higher, and it is bigger to consume energy; Epoxy molding plastic piece of its encapsulation usefulness is columned, and shared volume is big, difficulty relatively when being assemblied in less space; Need make long flow path through the overpickling gluing during making, environmental protection and energy saving property is poor.
Summary of the invention
Technical problem to be solved by this invention is the deficiency to prior art, provides that a kind of structure is more reasonable, volume is little, the material consumption amount is low, the diode of the more simple energy-conserving and environment-protective of manufacture craft.
Technical problem to be solved by this invention is to realize through following technical scheme.The present invention is a kind of diode; Be characterized in: it comprises the Schottky chip; Each welding is provided with an oxygen-free cupreous at the two ends of Schottky chip; Described Schottky chip and oxygen-free cupreous adopt the mode of injection moulding encapsulation to be packaged in the square epoxy molding plastic piece, and the link of oxygen-free cupreous stretches out outside the epoxy molding plastic piece.
In the above-described diode of the present invention: the forward voltage drop of described Schottky chip is preferably 0.3-0.5V, further preferred 0.4V.
Diode of the present invention (SOD123) is located at Schottky chip and oxygen-free cupreous encapsulation in the square epoxy molding plastic piece, and its structure is more reasonable, and volume is little, and the material consumption amount is low, is specially adapted to be installed in the less space.And diode of the present invention is to process through the method for welding, injection moulding encapsulation, and it has cancelled pickling gluing flow process, stopped product in manufacturing process to the pollution of environment, shortened the production cycle of product simultaneously widely, improved production efficiency of products; Further, also can reduce the power consumption of device itself effectively through adopting the Schottky chip of low forward voltage drop; The present invention can be widely used in microwave mixer, detection and the switching circuit.
Description of drawings
Fig. 1 is a structural representation of the present invention.
Embodiment
Following with reference to accompanying drawing, further describe concrete technical scheme of the present invention, so that those skilled in the art understands the present invention further, and do not constitute restriction to its right.
Embodiment 1.With reference to Fig. 1.A kind of diode; It comprises Schottky chip 3; Each welding is provided with an oxygen-free cupreous 1 at the two ends of Schottky chip 3; Described Schottky chip 3 adopts the mode of injection moulding encapsulation to be packaged in the square epoxy molding plastic piece 2 with oxygen-free cupreous 1, and the link of oxygen-free cupreous 1 stretches out outside the epoxy molding plastic piece 2.
Embodiment 2.In the embodiment 1 described diode: the forward voltage drop of described Schottky chip 3 is 0.3V.
Embodiment 3.In the embodiment 1 described diode: the forward voltage drop of described Schottky chip 3 is 0.5V.
Claims (2)
1. diode; It is characterized in that: it comprises the Schottky chip; Each welding is provided with an oxygen-free cupreous at the two ends of Schottky chip; Described Schottky chip and oxygen-free cupreous adopt the mode of injection moulding encapsulation to be packaged in the square epoxy molding plastic piece, and the link of oxygen-free cupreous stretches out outside the epoxy molding plastic piece.
2. a kind of diode according to claim 1 is characterized in that: the forward voltage drop of described Schottky chip is 0.3-0.5V.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102978951A CN102446869A (en) | 2010-09-30 | 2010-09-30 | Diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102978951A CN102446869A (en) | 2010-09-30 | 2010-09-30 | Diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102446869A true CN102446869A (en) | 2012-05-09 |
Family
ID=46009240
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010102978951A Pending CN102446869A (en) | 2010-09-30 | 2010-09-30 | Diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102446869A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101123036A (en) * | 2007-03-02 | 2008-02-13 | 哈尔滨海格科技发展有限责任公司 | Compound encapsulation infrared receiver |
| CN201038138Y (en) * | 2007-04-19 | 2008-03-19 | 扬州扬杰电子科技有限公司 | Photovoltaic diode |
| US20090160071A1 (en) * | 2007-12-20 | 2009-06-25 | Geng-Shin Shen | Die rearrangement package structure using layout process to form a compliant configuration |
-
2010
- 2010-09-30 CN CN2010102978951A patent/CN102446869A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101123036A (en) * | 2007-03-02 | 2008-02-13 | 哈尔滨海格科技发展有限责任公司 | Compound encapsulation infrared receiver |
| CN201038138Y (en) * | 2007-04-19 | 2008-03-19 | 扬州扬杰电子科技有限公司 | Photovoltaic diode |
| US20090160071A1 (en) * | 2007-12-20 | 2009-06-25 | Geng-Shin Shen | Die rearrangement package structure using layout process to form a compliant configuration |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120509 |