CN201038138Y - Photovoltaic diode - Google Patents

Photovoltaic diode Download PDF

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Publication number
CN201038138Y
CN201038138Y CN 200720035809 CN200720035809U CN201038138Y CN 201038138 Y CN201038138 Y CN 201038138Y CN 200720035809 CN200720035809 CN 200720035809 CN 200720035809 U CN200720035809 U CN 200720035809U CN 201038138 Y CN201038138 Y CN 201038138Y
Authority
CN
China
Prior art keywords
packaging
pin
schottky diode
utility
package cavity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN 200720035809
Other languages
Chinese (zh)
Inventor
王毅
杨鹏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yangzhou Yangjie Electronic Co Ltd
Original Assignee
Yangzhou Yangjie Electronic Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yangzhou Yangjie Electronic Co Ltd filed Critical Yangzhou Yangjie Electronic Co Ltd
Priority to CN 200720035809 priority Critical patent/CN201038138Y/en
Application granted granted Critical
Publication of CN201038138Y publication Critical patent/CN201038138Y/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1203Rectifying Diode
    • H01L2924/12032Schottky diode

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

The utility model discloses a photovoltaic diode in semiconductor device. The photovoltaic diode comprises a packaging housing made of novel aluminium material, a schottky diode, and two pins; the packaging housing made of novel aluminium material comprises a packaging chamber with the bottom sealed; the schottky diode is arranged in the packaging chamber; one end of a pin is connected with one end of the schottky diode; the other end of the schottky diode passes through the bottom of the packaging chamber and is arranged out of the packaging chamber; one end of the other pin is connected with the other end of the schottky diode and the other end of the pin is extended out of the packaging chamber in cylindrical shape; the cylindrical packaging chamber is internally filled with high thermal conductive packaging colophony. By adopting the packaging housing made of novel aluminium material, the utility model has the advantages of fast heat dissipation, small volume, high strength, low thermal resistance, etc. Furthermore, the utility model can effectively reduce the junction temperature.

Description

A kind of photovoltaic diode
Technical field
The utility model belongs to a kind of photovoltaic diode in the technical field of semiconductor device.
Background technology
Photovoltaic diode is the important protection device of photovoltaic generating system; extensively with the supporting use of solar module, the while also can be applicable in the low pressure high frequency switch device, and in the power-supply system of computer, household electrical appliance, stored-program control exchange etc.; both can make rectification usefulness, and also can make clamp and use.Along with cleaning, pollution-free, reproducible solar energy development utilization, the develop rapidly of communication automatic technology and household electrical appliance, the application market of photovoltaic diode will constantly enlarge.
But the photovoltaic diode of prior art can not adapt to abominable outdoor environment for use, especially during the broiling summer, because thermal resistance height, poor radiation, the intensity of photovoltaic diode are low, so it very easily damages, influences the service behaviour of electrical appliance.
The utility model content
Technical problem to be solved in the utility model provides the photovoltaic diode of low, the easy heat radiation of a kind of thermal resistance, intensity height, long service life.
The utility model comprises package casing, schottky junction and two pins of being made by the novel aluminum material; The package casing of being made by the novel aluminum material comprises the package cavity of a bottom lock, and schottky junction is in the package cavity; One end of above-mentioned one of them pin is connected an end of schottky junction, and the other end of this pin runs through package cavity bottom and is in outside the package cavity; One end of another pin links to each other with the other end of schottky junction, and the extension of the other end of this pin is in outside the columned package cavity; Be filled with high heat conduction potting resin in the columned package cavity.
The package casing that adopts the novel aluminum material to make has advantages such as rapid heat dissipation, volume is little, intensity is high, thermal resistance is low, and can reduce junction temperature effectively.Simultaneously, the high heat conduction packaging plastic that adopts the vacuum high-temperature curing technology to fill can closely contact with thermal conductive shell, and this has not only improved the intensity of product, and has reduced thermal resistance, helps heat radiation.Photovoltaic diode of the present utility model has not only kept characteristics such as the big operating current, low forward voltage drop, high-frequency and low-consumption, high surge current, transient protective function of prior art photovoltaic diode; promote the performance index of its operating ambient temperature and junction temperature simultaneously, met or exceeded the new related standards of formulating of photovoltaic industry.
Description of drawings
Fig. 1 is a kind of structural representation of the present utility model.
Embodiment
As shown in Figure 1, photovoltaic diode comprise package casing 1, schottky junction 2 and the pin 3 and 3 made by the novel aluminum material '.
The package casing of being made by the novel aluminum material 1 comprises a columned package cavity, the bottom lock of above-mentioned columned package cavity, open top.Schottky junction 2 is in the columned package cavity.One end of pin 3 and an end of schottky junction 2 interconnect, and the bottom that the other end runs through columned package cavity is in outside the columned package cavity; Pin 3 ' an end be connected the other end of schottky junction 2, and pin 3 ' the other end extend and be in outside the columned package cavity.Be filled with high heat conduction potting resin 4 in the above-mentioned columned package cavity.

Claims (1)

1. a photovoltaic diode is characterized in that: comprise package casing, schottky junction and two pins of being made by the novel aluminum material; The package casing of being made by the novel aluminum material comprises the package cavity of a bottom lock, and schottky junction is in the package cavity; One end of above-mentioned one of them pin is connected an end of schottky junction, and the other end of this pin runs through package cavity bottom and is in outside the package cavity; One end of another pin links to each other with the other end of schottky junction, and the extension of the other end of this pin is in outside the columned package cavity; Be filled with high heat conduction potting resin in the columned package cavity.
CN 200720035809 2007-04-19 2007-04-19 Photovoltaic diode Expired - Fee Related CN201038138Y (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 200720035809 CN201038138Y (en) 2007-04-19 2007-04-19 Photovoltaic diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 200720035809 CN201038138Y (en) 2007-04-19 2007-04-19 Photovoltaic diode

Publications (1)

Publication Number Publication Date
CN201038138Y true CN201038138Y (en) 2008-03-19

Family

ID=39210658

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 200720035809 Expired - Fee Related CN201038138Y (en) 2007-04-19 2007-04-19 Photovoltaic diode

Country Status (1)

Country Link
CN (1) CN201038138Y (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011116557A1 (en) * 2010-03-26 2011-09-29 Zhao Yanhua Solar photovoltaic component, terminal box used thereof and diode structure used threrof
CN102446869A (en) * 2010-09-30 2012-05-09 连云港丰达电子有限公司 Diode
CN115249749A (en) * 2021-04-25 2022-10-28 同方威视技术股份有限公司 Packaging structure of cadmium zinc telluride detector

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011116557A1 (en) * 2010-03-26 2011-09-29 Zhao Yanhua Solar photovoltaic component, terminal box used thereof and diode structure used threrof
CN102446869A (en) * 2010-09-30 2012-05-09 连云港丰达电子有限公司 Diode
CN115249749A (en) * 2021-04-25 2022-10-28 同方威视技术股份有限公司 Packaging structure of cadmium zinc telluride detector
CN115249749B (en) * 2021-04-25 2024-01-16 同方威视技术股份有限公司 Encapsulation structure of tellurium-zinc-cadmium detector

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Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
C56 Change in the name or address of the patentee
CP03 Change of name, title or address

Address after: Weiyang District pingshantang road Jiangyang Industrial Park 225008 Jiangsu city of Yangzhou Province three

Patentee after: Yangzhou Yangjie Electronic Co., Ltd.

Address before: 225008 Jiangsu city of Yangzhou province pingshantang road Jiangyang Industrial Park Business Park three

Patentee before: Yangzhou Yangjie Electronic Technology Co., Ltd.

CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20080319

Termination date: 20150419

EXPY Termination of patent right or utility model