CN102445854A - Workpiece stage vertical position measuring system - Google Patents

Workpiece stage vertical position measuring system Download PDF

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CN102445854A
CN102445854A CN 201010508118 CN201010508118A CN102445854A CN 102445854 A CN102445854 A CN 102445854A CN 201010508118 CN201010508118 CN 201010508118 CN 201010508118 A CN201010508118 A CN 201010508118A CN 102445854 A CN102445854 A CN 102445854A
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workpiece
stage
reflecting
light
angle
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CN 201010508118
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Chinese (zh)
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林彬
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上海微电子装备有限公司
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Abstract

The invention provides a workpiece stage vertical position measuring system comprising two angle reflecting mirrors and two light beam generating/detecting devices. The two angle reflecting mirrors are respectively installed at two sides of the x direction of a workpiece stage, and each angle reflecting mirror comprises two reflecting lenses which are connected into a right angle. The two light beam generating/detecting devices respectively emit light beams to irradiate the two angle reflecting mirrors and detect the light beams reflected by the angle reflecting mirrors. The two light beam generating/detecting devices are installed on a reference position of the workpiece stage, the z-direction position of the workpiece stage is obtained according to a formula, wherein k is the x-direction width of the workpiece stage, (x0, y0) is the current position of the workpiece stage, and z1 and z2 are respectively the z-direction positions of the workpiece stage, measured by the first light beam generating/detecting device and the second light beam generating/detecting device. The workpiece stage vertical position measuring system provided by the invention is used for reflecting rays by utilizing the angle reflecting mirrors, and is small in errors and saving in test time.

Description

工件台垂向位置测量系统 Vertical workpiece stage position measuring system

技术领域 FIELD

[0001] 本发明涉及一种测量系统,且特别涉及一种工件台垂向位置的测量系统。 [0001] The present invention relates to a measuring system, and more particularly to a system for measuring the vertical position of the workpiece table. 背景技术 Background technique

[0002] 在高端光刻机当中,要求工件台的定位精度达到很高的水平。 [0002] Among the high-lithography, required positioning accuracy of the work station reached a high level. 对于测定工件台位置的测量工具,则要求其不仅能够提供高精度测量,更要求其测量结构简单,测量过程快速且易于校正。 For the determination of the workpiece stage position measuring tool, which requires not only high-precision measurement can be provided, which also requires simple measuring configuration, fast and easy calibration measurement process.

[0003] 当前,高端光刻机当中工件台的位置基本都采用激光干涉仪来测量。 [0003] Currently, the high position of the workpiece stage lithography machine which basically be measured using a laser interferometer. 美国专利US6020964、US7158236、US6980279提出了几套由激光干涉仪组成的测量系统进行工件台位置测量的技术方案。 U.S. Patent No. US6020964, US7158236, US6980279 proposed sets of instrument measurement system consisting of a laser interferometer for measuring the position of the technical solutions of the workpiece table. 在测量工件台的ζ向位置方面,这些方案都是以不同方式在工件台侧面安装反射镜,将水平入射的测量光束反射为竖直向上(如图7、图9所示)。 In regard to a position ζ measuring the workpiece table, these programs are installed on different sides of the workpiece table mirror, the level of the incident measuring beam is reflected vertically upward (in FIG. 7, FIG. 9). 安装在工件台上方的另一个反射镜将该竖直向上的光束反射回工件台上的反射镜,经过工件台侧面的反射镜后,光束再次由竖直光束变成水平出射光束,最后返回干涉仪。 Another stage of the mirror mounted on the side of the workpiece table of the laser beam is reflected vertically upward reflecting mirror of the workpiece, after the workpiece table side of the mirror, the light beam from the horizontal into the vertical beam again outgoing light beam, and finally return to the interference instrument. 这种系统的测量光束的相位变化包含了工件台的水平位置变化和ζ向位置变化两个信息。 Phase change of the measuring beam changes in such a system comprises a horizontal change in position of the workpiece table and two position information to ζ. 利用另一路单独的水平位置测量信息,可以从中提取出工件台的ζ向位置变化。 Using a separate horizontal path of the measurement information to another location, it can be extracted from ζ to change the position of the workpiece table.

[0004] 这类方法利用高分辨率的激光干涉仪测量工件台的ζ向位置。 [0004] This method utilizes a high-resolution laser interferometer to measure the position of the workpiece table ζ. 激光干涉仪测量从光束出射端到接收端之间的光束长度从而实现对工件台位置的测量。 Laser interferometer measurement beam emitted from the beam length between the end of the receiving end in order to achieve measurement of the position of the workpiece table. 如图8所示,由于工件台的反射镜为平面镜,当工件台旋转或者倾斜时会导致光束偏转从而产生余弦误差。 8, since the mirror of the workpiece table plane mirror, when the workpiece table is rotated or inclined lead to beam deflection to produce a cosine error. 为了消除这方面的误差,测量系统需要进行大量的误差补偿和校正。 To eliminate the error in this regard, measurement systems require extensive error correction and compensation. 测量系统越庞大,这方面的补偿就越复杂,这就大幅降低位置测量系统中的位置计算速度和测量效率。 The larger the measuring system, the more complex aspects of this compensation, which significantly reduce the position measurement system to measure the position of the computing speed and efficiency.

[0005] 这类方法的测量光线普遍都经过较长距离的传播,但是测量的目标长度只是这些长度的一小部分,这样势必会大幅降低测量信息的信噪比。 [0005] Measurement of light through such methods are generally long distance propagation, but the target length measurements only a small part of the length, this is bound to significantly reduce signal to noise ratio measurement information. 测量光线经过如此长距离的传播,借助光波波长进行距离测量的干涉仪信号很容易受环境因素的影响。 Measuring the propagation of light through such a long distance, by means of a signal light wavelength interferometer for distance measurement is very susceptible to environmental factors.

发明内容 SUMMARY

[0006] 本发明提出一种工件台的垂向位置测量系统,利用角反射镜对光线进行反射,误差小,节省测试时间。 [0006] The present invention provides a system for measuring the vertical position of the workpiece table, using the angle of the mirror to reflect the light, the error is small, save test time.

[0007] 为了达到上述目的,本发明提出一种工件台的垂向位置测量系统,包括第一角反射镜和第二角反射镜,分别安装在工件台的X向的两侧,第一角反射镜和第二角反射镜包括两片反射镜片,两片反射镜片连接成直角; [0007] To achieve the above object, the present invention proposes a system for measuring the vertical position of the workpiece table comprising a first and a second angle of the mirror angle of the mirror, the X-direction are mounted on both sides of the workpiece table, a first angle mirror and a second mirror comprising two corner reflective lens, two lenses are connected at right angles to the reflector;

[0008] 第一光束产生/探测装置,对应于第一角反射镜的位置,用以产生光束至第一角反射镜,并且探测由第一角反射镜所反射的光束; [0008] The first beam generating / detecting means, a first position corresponding to the angle of the mirror, for generating a first light beam to the angle of the mirror, and detects the light beam by the first angle of the mirror reflected;

[0009] 第二光束产生/探测装置,对应于第二角反射镜的位置,用以产生光束至第二角反射镜,并且探测由第二角反射镜所反射的光束,第一光束产生/探测装置和第二光束产生/探测装置安装在所述工件台的基准位置上,不随该工件台移动。 [0009] The second beam generating / detecting means, a second position corresponding to the angle of the mirror and for generating a light beam to a second angle of the mirror, and a second probe light beam by the angle of the mirror reflected, a first light beam generation / second beam generating means and the detection / reference position detecting means is mounted on the workpiece table, with the work table is not moved.

[0010] 进一步说,根据公式 [0010] Further, according to the formula

3[0011] 3 [0011]

Figure CN102445854AD00041

[0012] 可以得到工件台的ζ向位置,其中k为工件台的χ向宽度,(Xtl,y0)为工件台的当前位置,Z1^Z2分别为第一光束产生/探测装置和第二光束产生/探测装置测得的工件台的Z向位置。 [0012] ζ can be obtained to a position of the workpiece table, where k is the width of the workpiece table χ, (Xtl, y0) is the current position of the workpiece table, Z1 ^ Z2 respectively generating / detecting means into a first beam and a second beam generating Z / detecting means detects the position of the workpiece table.

[0013] 进一步说,根据公式[0014] [0013] Further, according to the formula [0014]

Figure CN102445854AD00042

[0015] 得到工件台y向的倾斜程度Ry。 [0015] Ry obtained inclination of the workpiece table in the y-direction.

[0016] 进一步说,角反射镜的宽度与工件台在χ向的宽度相同。 [0016] Further, the width of the angle of the mirror is the same as the width of the workpiece table χ direction.

[0017] 进一步说,工件台为光刻机中用于承载硅片或掩模的工件台。 [0017] Further, the workpiece table of the lithography machine for carrying a silicon wafer or mask workpiece stage.

[0018] 进一步说,垂向位置测量系统还可包括: [0018] Further, the vertical position of the measuring system further comprising:

[0019] 第三光束产生/探测装置,与第二光束产生/探测装置位于所述工件台的同一侧, 用以产生光束至第二角反射镜,并且探测由第二角反射镜所反射的光束; [0019] The third beam generating / detecting means, and the second beam generating / detecting means located on the same side of the work table, for generating a light beam to a second angle of the mirror, and detects the second angle is reflected by the mirror beam;

[0020] 根据公式 [0020] According to the formula

[0021 ] [0021]

Figure CN102445854AD00043

[0022] 得到工件台χ向的倾斜程度Rx,其中z2、Z3分别为第二光束产生/探测装置和第三光束产生/探测装置测得的工件台的ζ向位置,d为第二光束产生/探测装置和第三光束产生/探测装置之间的距离。 [0022] to give the inclination to the workpiece table χ Rx, wherein z2, Z3 respectively, the second beam generating / detecting means and the third beam generating [zeta] / measured detection apparatus to the work table position, d generating a second light beam / detection device and the distance between the third beam generating / detecting means.

[0023] 本发明提出的工件台的垂向位置测量系统利用角反射镜反射回来的光束进行位置定位,消除了测量光束的余弦效应对测量引入的误差;本发明直接而有效地测量工件台的高度,其对工件台垂向位置测量的结果受工件台旋转和倾斜的影响小,可以降低位置计算的复杂程度从而节省测量的时间。 [0023] The present invention is made of vertical workpiece table position measurement system using the angle of the mirror reflected beam position location, eliminating the measurement error of the measurement beam introduced by the cosine effect; the present invention is measured directly and efficiently workpiece table height, as a result of the vertical position of the workpiece table measuring small impact the workpiece by rotation and tilt of the stage, can reduce the complexity of calculating the position of saving time measurement.

附图说明 BRIEF DESCRIPTION

[0024] 图1所示为本发明较佳实施例的具有垂向位置测量系统的光刻机的结构示意图。 Having a structural diagram of the lithography machine in a vertical position measurement system [0024] FIG 1 preferred embodiment of the present invention is shown.

[0025] 图2为本发明第一实施例的垂向位置测量系统位置示意图。 [0025] FIG. 2 is a schematic vertical position of the position measurement system according to a first embodiment of the present invention.

[0026] 图3所示为图2中光束产生/探测装置的结构示意图。 [0026] FIG. 3 shows a schematic view of generation / detection apparatus of FIG. 2 is a light beam.

[0027] 图4为本发明第一实施例的垂向位置测量系统的俯视应用原理示意图。 [0027] Figure 4 a schematic top view of the principle of application of the vertical position measurement system according to a first embodiment of the present invention.

[0028] 图5所示为垂向位置测量系统中角反射镜的校正系统示意图。 Shows the vertical correction system position measurement system schematic view angle of the mirror. [0028] FIG.

[0029] 图6所示为本发明第二实施例的垂向位置测量系统位置示意图。 As shown in [0029] Fig 6 a schematic view of the vertical position of the position measurement system of the second embodiment of the present invention.

[0030] 图7-9所示为先前技术中的垂向位置测量系统结构示意图。 [0030] Figure 7-9 is a schematic view of a previous vertical position measuring system architecture art.

具体实施方式 detailed description

[0031] 为了更了解本发明的技术内容,特举具体实施例并配合所附图式说明如下。 [0031] In order to better understand the technical content of the present invention, several specific embodiments with the accompanying drawings and described below.

[0032] 图1所示为本发明较佳实施例的具有垂向位置测量系统的光刻机的结构示意图。 Having a structural diagram of the lithography machine in a vertical position measurement system [0032] FIG 1 preferred embodiment of the present invention is shown.

[0033] 光刻机沿光轴依次包括掩模11、第一工件台12、物镜13、硅片14和第二工件台15。 [0033] The lithography mask 11 includes, in order along the optical axis, a first table 12, the objective lens 13, the wafer stage 14 and the second workpiece 15. 第一工件台12承载掩模11,第二工件台15承载硅片14。 The first table 12 carries a mask 11, the second workpiece carrier table 15 the wafer 14. 光束通过掩模11和物镜13对硅片14进行曝光。 Beam is exposed through a mask 11 and the objective lens 13 silicon wafer 14. 本发明提供的垂向位置测量系统16能够分别对应设置在第一工件台12和第二工件台15侧边,以测量第一工件台12和第二工件台15的ζ向位置。 Vertical position measuring system 16 can be provided by the present invention are provided corresponding to the first table 12 and the second side of the work table 15, to measure the ζ first table 12 and the table 15 to the second work position.

[0034] 图2为本发明第一实施例的垂向位置测量系统位置示意图。 [0034] FIG. 2 is a schematic vertical position of the position measurement system according to a first embodiment of the present invention.

[0035] 本实施例中以工件台5为承载硅片的工件台为例,其上包括物镜13对硅片进行曝光。 [0035] In the present embodiment, exposure to the workpiece table carrying the workpiece table 5 is an example of a silicon wafer, which includes the objective lens 13 on the silicon wafer.

[0036] 在工件台5的χ向的两侧分别安装第一角反射镜41和第二角反射镜42。 [0036] are attached to the first angle of the mirror 41 and the second angle of the mirror 42 at both sides of the χ workpiece table 5. 每个角反射镜41、42由相邻设置的两片长条形反射镜片组成,为了保证入射光线与反射光线保持平行,这两片长条形反射镜片保持相互垂直的位置关系。 Each angle of the mirror 41 by the two elongated mirror plate disposed adjacent to the composition, in order to ensure the incident light and the reflected rays remain parallel, elongated mirror plate two sheets perpendicular positional relationship maintained. 角反射镜4的宽度与工件台5的宽度相同,从而保证在工件台5的行程范围内,垂向位置测量系统均可测量到工件台5的ζ 向位置。 The same width as the workpiece table 5 the angle of the mirror 4, so as to ensure the range of travel of the workpiece table 5, the vertical position of the measuring system can measure the workpiece table 5 to the position of [zeta].

[0037] 第一光束产生/探测装置301安装在对应第一角反射镜41的位置,用以产生光束至第一角反射镜42,并且探测由第一角反射镜41所反射的光束。 [0037] The first beam generating / detecting means 301 is mounted at a position corresponding to a first angle of the mirror 41, for generating a first light beam to the angle of the mirror 42, and detects the light beam reflected by the first angle of the mirror 41.

[0038] 第二光束产生/探测装置302安装在对应第二角反射镜42的位置,用以产生光束至第二角反射镜42,并且探测由第二角反射镜42所反射的光束。 [0038] The second beam generating / detecting means 302 is mounted at a position corresponding to the second angle of the mirror 42, for generating a light beam to a second angle of the mirror 42, and detects the light beam reflected by the second angle of the mirror 42.

[0039] 第一光束产生/探测装置301、第二光束产生/探测装置302均安装在光刻机的基准框架上,因此该垂向位置测量系统可探测工件台5相对基准框架的位置变化。 [0039] The first beam generating / detecting means 301, second light beam generating / detecting means 302 are mounted on the machine frame of the lithographic reference, so that the vertical position measurement system 5 change in position of the workpiece table relative to the reference frame can be detected.

[0040] 第一光束产生/探测装置301和第二光束产生/探测装置302的结构相同,会如图3所示。 [0040] The first beam generating / detecting means 301 and the second beam to generate the same configuration / detection apparatus 302, will be as shown in FIG.

[0041] 图3所示为图2中光束产生/探测装置的结构示意图。 [0041] FIG. 3 shows a schematic view of generation / detection apparatus of FIG. 2 is a light beam.

[0042] 以第一光束产生/探测装置301为例,其用以产生光束的装置包括激光产生器1、 调制光栅2和第一显微物镜3,光束由激光产生器1产生,经过调制光栅2和第一显微物镜3射出。 [0042] In a first beam generating / detecting means 301, for example, means for generating a light beam which comprises a laser generator 1, a modulator 2 and the first microscope objective grating 3, the light beam generated by the laser generator 1, the modulated grating 2 and 3 a first microscope objective is emitted. 第一光束产生/探测装置301用以探测光束的装置包括第二显微物镜6、探测光栅7和探测器8。 A first beam generating means / detecting means 301 for detecting a second microscope objective comprises a beam 6, 7 and the detector 8 detecting the grating. 调制光栅2和探测光栅7均为透射光栅。 Detecting modulation grating 2 and grating 7 are transmission gratings. 光束经过角反射镜4反射后,经第二显微物镜6、探测光栅7射入探测器8。 After the beam angle of the mirror 4 is reflected by the second microscope objective 6, the detector 7 to detect incident on the grating 8. 探测器8能够探测光束在ζ轴方向上的偏移。 Offset detector 8 can detect the light beam in the ζ-axis direction.

[0043] 如图2所示,当工件台5沿ζ轴移动至虚线位置时,由于角反射镜对光束反射的几何关系,光束产生装置发出的光束会以虚线所示进行反射,当测量到的光束移动的距离时,则表明工件台5相对于基准框架的ζ向移动距离为: [0043] As shown, when the workpiece along the ζ-axis table 5 is moved to the broken line position, the geometry of the angle of the mirror reflected beam, the beam emitted from the light beam generating apparatus will be reflected in a broken line shown in FIG 2, when the measured when the moving distance of the light beam, it indicates that the workpiece table 5 with respect to the reference frame to the mobile ζ distance:

[0044] Δ ζ = Δ ζ0/2 [0044] Δ ζ = Δ ζ0 / 2

[0045] 本领域技术人员可知,此处的工件台5可以为承载掩模或是硅片的工件台5,也可以是其它加工台,只要将反射镜4安装于工件台5,而光束产生/探测装置安装在一个基准位置上,即可达到本发明目的,对于使用环境本发明不予限制。 [0045] Those skilled in the art will appreciate, the workpiece table 5 herein may be a silicon wafer or a mask carrying the workpiece table 5, and may be other processing stations, as long as the mirror 4 is mounted on the workpiece table 5, and the light beam generating / detection device installed in a reference position, to achieve the object of the present invention, the present invention is not to limit the usage environment.

[0046] 图4为本发明第一实施例的垂向位置测量系统的俯视应用原理示意图。 [0046] Figure 4 a schematic top view of the principle of application of the vertical position measurement system according to a first embodiment of the present invention.

[0047] 如图4所示,y方向上的两个光束产生/探测装置301、302实时测量工件台5两侧的ζ向位置。 [0047] As shown, the two beams in the y-direction to produce 4 / ζ detecting means 301, 302 to a position on both sides of real-time measurement of the workpiece table 5. 由于两个光束产生/探测装置301、302是沿着χ向设置,因此,χ向两侧的角反射镜4上的测量点随着工件台5在χ向上位置的变化移动,但工件台5在χ向移动的不影响测量点的位置。 Since the two light beam generating / detecting means 301, 302 are disposed along a direction [chi] Therefore, [chi] with the workpiece table 5 is moved to the measurement point 4 on both sides of the angle of the mirror changes in an upward position [chi], but the work station 5 It does not affect the position of the measurement point in the mobile χ.

[0048] 在光刻机工作过程中,光刻机对硅片上各个场依次进行曝光。 [0048] In lithography operation, the lithography machine for each exposure field on the wafer sequentially. 工件台ζ向控制的主要职责是在系统对各个场进行曝光时,使正在曝光的场保持在投影物镜的焦面上。 Ζ workpiece table to control the main functions in the system for each field exposure, the exposure field is held in the focal plane of the projection objective. 作为测量工件台垂向位置的测量系统,必须测量当前曝光场位置处的工件台高度,所谓工件台当前的ζ向位置也是指工件台5的上表面曝光中心位置的ζ向高度。 Measuring the vertical position of the workpiece table as the measuring system, the work station must measure the current height position of the exposure field, the so-called work station currently ζ ζ also refers to the position of the center position of the exposure surface of the workpiece table 5 in the height. 当系统对(x0,y0)位置的场进行曝光时,工件台5便移动到水平位置为(X0,y0)的地方。 When the field system (x0, y0) exposed position, the workpiece table 5 is moved to a horizontal position (X0, y0) of the place. 如图4所示,此时工件台5的ζ向位置为: As shown in FIG 4, when the workpiece table position ζ 5:

[0049] [0049]

Figure CN102445854AD00061

[0050] 其中,k为工件台5的χ向宽度,即工件台χ向的左右两个测量面的距离;(¾,y0) [0050] where, k is χ workpiece table 5 in the width, i.e. the distance of the two measuring surfaces to the right and left work station χ; (¾, y0)

为工件台5的当前位置;Z1^2分别为第一光束产生/探测装置301和第二光束产生/探测 The current position of the workpiece table 5; Z1 ^ generating / 2 are a first probe beam generating / detecting means 301 and the second light beam

装置302测得的工件台ζ向位置。 Means measured on the workpiece stage 302 to a position ζ. 借助本测量结构,同时可以测得工件台5的另一个位置 By means of the measurement structure, while another measured position of the workpiece table 5

参数Ry,即工件台5在y向的倾斜程度,它的计算公式为: Parameters Ry, i.e., the inclination of the workpiece table 5 in the y-direction, which is calculated as:

2 一2, 2-2,

[0051] [0051]

Figure CN102445854AD00062

[0052] 图5所示为垂向位置测量系统中角反射镜的校正系统示意图。 Vertical position measuring system is shown a schematic view of the angular correction system mirror [0052] FIG.

[0053] 本测量结构通过工件台5侧面的角反射镜反射光束、基准框架上的探测器探测所反射的光束位置来测量工件台5的ζ向位置。 [0053] The present measurement configuration by the side of the workpiece table 5 the beam angle of the mirror, the beam position detector detects the reflected reference frame measured reflected workpiece table 5 to the position of [zeta]. 作为测量工件台ζ向位置的测量机构,一般要求测量精度达到10纳米以下。 As to the measurement of the workpiece table ζ position measuring means, generally require the measurement accuracy of 10 nm or less. 如果角反射镜中的反射玻璃的反射表面存在起伏,则会降低测量的精度。 If the reflective surface of the reflection angle of the mirror glass, the presence of ups and downs, the measurement accuracy will be reduced. 安装在工件台5两侧的角反射镜为长条形结构,长度与工件台5的宽度相当,需要达到30cm左右。 Angle of the mirror mounted on both sides of the workpiece table 5 is elongated structure, the length and width of the workpiece table 5 equivalent, required to achieve approximately 30cm. 加工这么大尺度的光学器件时,加工精度很难达到10纳米之内, 最好的水平也要达到100纳米以上。 When processing such a large-scale optical devices, precision is difficult to achieve within 10 nanometers, preferably of more than 100 nanometers but also horizontal. 因此为了使本测量结构能够正常使用,还需要对测量结果进行镜面校正。 In order that the measurement structure thus can be used normally, but also the measurement results corrected mirror.

[0054] 其中一种可以采用的校正方法如图5所示。 Correction [0054] One may be employed as shown in FIG. 校正系统包括调焦调平传感器9,调焦调平传感器9能够根据感应到硅片14位置调整工件台5,使之位于预定的位置和焦点上。 Calibration system including a focus leveling sensor 9, 9 focus leveling sensor 14 can sense the position of the wafer table 5 is adjusted according to the workpiece, so that the predetermined position and located on the focus. 镜面形貌可以采用多次测量求平均的方法。 The method of the mirror topography averaging multiple measurements may be employed.

[0055] 校正方法包括下列步骤:上载一块超平硅片14到工件台5上,工件台的高度由垂向位置测量系统控制,因而此时由调焦调平传感器测量到的硅片上表面高度ζ包含着工件台高度&ight、硅片形貌Zwafmiap以及垂向位置测量系统的镜面形貌^limniiap : [0055] The correction method comprising the steps of: uploading a super flat wafer 14 on the workpiece table 5, the vertical height of the workpiece stage position measuring system control, and therefore at this time is measured by the focus leveling sensor to the upper surface of silicon a work station comprising a height ζ height & ight, a mirror wafer topography and morphology Zwafmiap vertical position measurement system ^ limniiap:

[0056] Z Zheight+Zwafermap+Zmirrormap [0056] Z Zheight + Zwafermap + Zmirrormap

[0057] 工件台高度Zheight为设置量,因此为已知量。 [0057] The height of the workpiece table is disposed Zheight amount, therefore a known quantity. 对于不同硅片,硅片形貌Zwafemap为随机起伏的面形。 Random undulating surface shape for different silicon, silicon morphology Zwafemap. 为了得到上述的镜面形貌^limmap,需要将硅片面形从测量值中滤除。 To obtain the above specular morphology ^ limmap, the wafer surface needs to be formed was filtered off from the measurement. 具体地,可以通过多次重复上述测量,将测量结果平均,从而将随机起伏的硅片面形滤除。 Specifically, by repeating the above measurement several times, average the results to the random fluctuation of the silicon wafer surface shape was filtered off.

[0058] 同理,硅片形貌Zwafemap对垂向位置测量系统的测量值Ry的影响量可以采样同样的测量方法。 [0058] Similarly, the amount of silicon morphology Zwafemap influence the measured values ​​Ry of the vertical position measurement system may sample the same measurement method. 其测量过程可以与ζ向的面形同时进行。 The measurement process may be performed simultaneously with the surface shape of ζ.

[0059] Ry Ry"he ight+Rywafermap+Rymirrormap [0059] Ry Ry "he ight + Rywafermap + Rymirrormap

[0060] Ryheight为工件台y向的倾斜程度Ry的设置量,Rywafermap为Ry向的硅片形貌, Ryfflirrormap为Ry向的镜面形貌,通过滤除硅片面形,可以从调焦调平传感器的测量结果中得到Ry向的镜面形貌。 [0060] Ryheight y is the amount of work stations disposed degree of inclination of Ry, Rywafermap Ry to the silicon wafer topography, Ryfflirrormap Ry to a mirror topography of the wafer surface shape by filtering, from the focus leveling Ry specular morphology obtained in the measurement result of the sensor.

[0061] 图6所示为本发明第二实施例的垂向位置测量系统位置示意图。 As shown in [0061] Fig 6 a schematic view of the vertical position of the position measurement system of the second embodiment of the present invention.

[0062] 第二实施例的垂向位置测量系统包括第三光束产生/探测装置303,与第二光束产生/探测装置302位于工件台5的同一侧,用以产生光束至第二角反射镜42,并且探测由第二角反射镜42所反射的光束。 [0062] Vertical position measuring system of the second embodiment includes a third beam generating / detecting means 303, second light beam generating / detecting means 302 on the same side of the workpiece table 5, for generating a light beam to a second angle of the mirror 42, and a second angle detected by the reflected light beam 42 reflected by the mirror. [0063] 在这种结构下,3个光束产生/探测装置可以分别测量工件台上三个位置的垂向高度。 [0063] In this configuration, three beam generating / detecting means may measure the vertical height of each of the workpiece table of the three positions. 因此,该系统除了可以测量工件台的工件台y向的倾斜程度)之外,本系统还可以利用以下公式测量工件台χ向的倾斜程度Rx : Thus, the system may be measured in addition than the inclination of the work station y to the work station), the system also can measure the inclination of the work table using the following equation χ Rx:

[0064] [0064]

Figure CN102445854AD00071

[0065] 其中,z2、Z3分别为第二光束产生/探测装置302和第三光束产生/探测装置303 测得的工件台ζ向位置,d为第二光束产生/探测装置302和第三光束产生/探测装置303 之间的距离。 [0065] wherein, z2, Z3 generate a second light beam / detection device 302 and the third beam generating / detecting means 303 measured on the workpiece table ζ generating / detecting means 302 and the third light beam to a second position, d generating / detecting the distance between the device 303.

[0066]民向的镜面形貌对测量值民的影响量可以采用类似Ry、z向镜面形貌的测量方法, 其测量过程可与ζ向、Ry向的面形同时进行。 [0066] The mirror surface topography affects the amount of people to people values ​​similar Ry can be measured, the Z mirror topography measuring method, measurement can be performed simultaneously with the process of the ζ, Ry to the surface shape.

[0067] Rx RXheight+RXwafermap+RXmirrormap [0067] Rx RXheight + RXwafermap + RXmirrormap

[0068] 其中,Rxheight为工件台χ向的倾斜程度Rx的设置值,Rxwafermap为Rx向的硅片形貌, RxmimmapSRx向的镜面形貌。 [0068] wherein the set value of the inclination of workpiece stage Rxheight direction χ of Rx, Rxwafermap Rx to the silicon wafer topography, morphology RxmimmapSRx specular direction. 通过对多个不同硅片进行测量,滤除硅片面形,可以从调焦调平传感器的测量结果中得到民向的镜面形貌。 By measuring a plurality of different silicon wafers, a silicon wafer surface shape was filtered off, the mirror can be obtained from the morphology of people to focus leveling measurement results of the sensor.

[0069] 虽然本发明已以较佳实施例揭露如上,然其并非用以限定本发明。 [0069] While the present invention has been disclosed above by the preferred embodiments, they are not intended to limit the present invention. 本发明所属技术领域中具有通常知识者,在不脱离本发明的精神和范围内,当可作各种的更动与润饰。 Technical Field The present invention pertains having ordinary knowledge in the present invention without departing from the spirit and scope, may make various modifications and variations. 因此,本发明的保护范围当视权利要求书所界定者为准。 Accordingly, the scope of the present invention when the book following claims and their equivalents.

Claims (6)

  1. 1. 一种工件台的垂向位置测量系统,其特征在于,包括:第一角反射镜和第二角反射镜,分别安装在所述工件台的X向的两侧,所述第一角反射镜和第二角反射镜包括两片反射镜片,所述两片反射镜片连接成直角;第一光束产生/探测装置,对应于所述第一角反射镜的位置,用以产生光束至所述第一角反射镜,并且探测由所述第一角反射镜所反射的光束;第二光束产生/探测装置,对应于所述第二角反射镜的位置,用以产生光束至所述第二角反射镜,并且探测由所述第二角反射镜所反射的光束,所述第一光束产生/探测装置和第二光束产生/探测装置安装在所述工件台的基准位置上,不随该工件台移动。 1. A system for measuring the vertical position of the workpiece table, characterized by comprising: a first and a second angle of the mirror angle of the mirror, the X-direction are mounted on both sides of the workpiece table, said first angle mirror and a second mirror comprising two corner reflective lens, the two are connected at right angles to the mirror plate; a first beam generating / detecting means, said first position corresponding to the angle of the mirror, for generating a light beam to the said first angle of the mirror, and detects the light beam by the first angle of the mirror reflected; / detecting a second light beam generating means, corresponding to the second angular position of the mirror, for generating a light beam to the first two angle of the mirror, and detects the light beam from said second reflected angle of the mirror, the first beam generating / detecting means and the second beam generating / detecting means mounted at the reference position of the workpiece on the table, does not vary with the moving the workpiece stage.
  2. 2.根据权利要求1所述的工件台的垂向位置测量系统,其特征在于,根据公式 The vertical position measuring system according to claim 1 of the workpiece table, characterized in that, according to the formula
    Figure CN102445854AC00021
    可以得到所述工件台的Z向位置,其中k为所述工件台的χ向宽度,(Xtl,y0)为所述工件台的当前位置,Z1^z2分别为所述第一光束产生/探测装置和所述第二光束产生/探测装置测得的所述工件台的ζ向位置。 Z can be obtained to a position of the workpiece table, wherein the workpiece stage χ k is the width, (Xtl, y0) of the current position of the workpiece table, the first beam generating Z1 ^ z2 are / Probe said second beam generating means and / ζ to the work table position detecting means measured.
  3. 3.根据权利要求1所述的工件台的垂向位置测量系统,其特征在于,根据公式 The vertical position measuring system according to claim 1 of the workpiece table, characterized in that, according to the formula
    Figure CN102445854AC00022
    得到所述工件台1向的倾斜程度Ry。 To obtain the inclination of the work station 1 to Ry.
  4. 4.根据权利要求1所述的工件台的垂向位置测量系统,其特征在于,所述角反射镜的宽度与所述工件台在χ向的宽度相同。 The vertical position measuring system according to claim 1 of the workpiece table, characterized in that the angle of the mirror width and the width of the work table in the same direction χ.
  5. 5.根据权利要求1所述的工件台的垂向位置测量系统,其特征在于,所述工件台为光刻机中用于承载硅片或掩模的工件台。 The vertical position measuring system according to claim 1 of the workpiece table, wherein the workpiece is a lithographic machine table for carrying a workpiece stage or a mask of silicon.
  6. 6.根据权利要求1所述的工件台的垂向位置测量系统,其特征在于,还包括: 第三光束产生/探测装置,与所述第二光束产生/探测装置位于所述工件台的同一侧,用以产生光束至所述第二角反射镜,并且探测由所述第二角反射镜所反射的光束; 根据公式 The vertical position measuring system according to claim 1 of the workpiece table, characterized in that, further comprising: a third beam generating / detecting means, and said second beam generating / detecting means of the work station in the same side, for generating a second angle of the mirror to the beam, and detects the light beam from said second reflected angle of the mirror; according to the formula
    Figure CN102445854AC00023
    得到所述工件台χ向的倾斜程度Rx,其中z2、Z3分别为所述第二光束产生/探测装置和所述第三光束产生/探测装置测得的所述工件台的ζ向位置,d为所述第二光束产生/探测装置和所述第三光束产生/探测装置之间的距离。 To obtain the inclination of the workpiece to the table χ Rx, wherein z2, Z3 respectively, the second beam generating / detecting means and said third beam generating [zeta] / work station of the apparatus to detect the measured position, d said second light beam generating / detecting means and the distance between the third beam generating / detecting means.
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* Cited by examiner, † Cited by third party
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US4768381A (en) * 1986-10-01 1988-09-06 Mitsubishi Denki Kabushiki Kaisha Optical vibrometer
US20030142321A1 (en) * 2002-01-30 2003-07-31 Canon Kabushiki Kaisha Positioning stage device
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