CN102445854A - Workpiece stage vertical position measuring system - Google Patents
Workpiece stage vertical position measuring system Download PDFInfo
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- CN102445854A CN102445854A CN2010105081187A CN201010508118A CN102445854A CN 102445854 A CN102445854 A CN 102445854A CN 2010105081187 A CN2010105081187 A CN 2010105081187A CN 201010508118 A CN201010508118 A CN 201010508118A CN 102445854 A CN102445854 A CN 102445854A
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- work stage
- light beam
- sniffer
- corner reflector
- measuring system
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Abstract
The invention provides a workpiece stage vertical position measuring system comprising two angle reflecting mirrors and two light beam generating/detecting devices. The two angle reflecting mirrors are respectively installed at two sides of the x direction of a workpiece stage, and each angle reflecting mirror comprises two reflecting lenses which are connected into a right angle. The two light beam generating/detecting devices respectively emit light beams to irradiate the two angle reflecting mirrors and detect the light beams reflected by the angle reflecting mirrors. The two light beam generating/detecting devices are installed on a reference position of the workpiece stage, the z-direction position of the workpiece stage is obtained according to a formula, wherein k is the x-direction width of the workpiece stage, (x0, y0) is the current position of the workpiece stage, and z1 and z2 are respectively the z-direction positions of the workpiece stage, measured by the first light beam generating/detecting device and the second light beam generating/detecting device. The workpiece stage vertical position measuring system provided by the invention is used for reflecting rays by utilizing the angle reflecting mirrors, and is small in errors and saving in test time.
Description
Technical field
The present invention relates to a kind of measuring system, and be particularly related to the measuring system of a kind of work stage vertical position.
Background technology
In the middle of high-end litho machine, require the bearing accuracy of work stage to reach very high level.Survey instrument for measuring the work stage position then requires it that high-acruracy survey not only can be provided, and more requires its measurement structure simple, and measuring process fast and be easy to proofread and correct.
Current, the position of work stage basically all adopts laser interferometer to measure in the middle of the high-end litho machine.U.S. Pat 6020964, US7158236, US6980279 have proposed the technical scheme that measuring system that several covers are made up of laser interferometer is carried out the work stage position measurement.To aspect the position, these schemes all are that catoptron is installed in the work stage side by different way at the z of measuring workpieces platform, and the measuring beam of glancing incidence is reflected into straight up (like Fig. 7, shown in Figure 9).Another catoptron that is installed in the work stage top returns this beam reflection straight up to the catoptron on the work stage, and behind the catoptron through the work stage side, light beam becomes horizontal outgoing beam by vertical light beam once more, returns interferometer at last.The horizontal level that the phase change of the measuring beam of this system has comprised work stage change and z to two information of change in location.Utilize the independent horizontal level metrical information in another road, the z that can therefrom extract work stage is to change in location.
These class methods utilize the z of high-resolution laser interferometer measurement work stage to the position.Thereby laser interferometer measurement is realized the measurement to the work stage position from the light beam exit end to the beam length the receiving end.As shown in Figure 8, because the catoptron of work stage is a level crossing, thereby, the work stage rotation can cause beam deflection to produce cosine error when perhaps tilting.In order to eliminate the error of this respect, measuring system need be carried out a large amount of error compensation and correction.Measuring system is huge more, and the compensation of this respect is just more complicated, position calculation speed and efficiency of measurement in this measuring system that just significantly dips.
The measurement light of these class methods generally all passes through the propagation of longer distance, but the target length of measuring is the sub-fraction of these length, will certainly significantly reduce the signal to noise ratio (S/N ratio) of metrical information like this.Measure the propagation of light through so long distance, the interferometer signal that carries out range observation by optical wavelength is easy to receive Effect of Environmental.
Summary of the invention
The present invention proposes a kind of vertical position measuring system of work stage, utilizes corner reflector that light is reflected, and error is little, saves the test duration.
In order to achieve the above object; The present invention proposes a kind of vertical position measuring system of work stage; Comprise first corner reflector and second corner reflector; The x that is installed in work stage respectively to both sides, first corner reflector and second corner reflector comprise two reflecting optics, two reflecting optics connect into the right angle;
The first light beam generation/sniffer corresponding to the position of first corner reflector, in order to generation light beam to the first corner reflector, and is surveyed by first corner reflector institute beam reflected;
The second light beam generation/sniffer; Position corresponding to second corner reflector; In order to produce light beam to the second corner reflector; And survey by second corner reflector institute beam reflected, the first light beam generation/sniffer and the second light beam generation/sniffer are installed on the reference position of said work stage, do not move with this work stage.
Furtherly, according to formula
The z that can obtain work stage is to the position, wherein k be the x of work stage to width, (x
0, y
0) be the current location of work stage, z
1, z
2The z that is respectively the work stage that the first light beam generation/sniffer and the second light beam generation/sniffer record is to the position.
Furtherly, according to formula
Obtain work stage y to inclined degree Ry.
Furtherly, the width of corner reflector and work stage x to width identical.
Furtherly, work stage is the work stage that is used to carry silicon chip or mask in the litho machine.
Furtherly, the vertical position measuring system also can comprise:
The 3rd light beam generation/sniffer is positioned at the same side of said work stage with the second light beam generation/sniffer, in order to producing light beam to the second corner reflector, and surveys by second corner reflector institute beam reflected;
According to formula
Obtain work stage x to inclined degree Rx, z wherein
2, z
3The z that is respectively the work stage that the second light beam generation/sniffer and the 3rd light beam generation/sniffer record is to the position, and d is the distance between the second light beam generation/sniffer and the 3rd light beam generation/sniffer.
The light beam that the vertical position measuring system of the work stage that the present invention proposes utilizes corner reflector to reflect carries out location positioning, and the cosine effect of having eliminated measuring beam is to measuring the error of introducing; The present invention is the height of measuring workpieces platform directly and effectively, and its result that work stage vertical position is measured receives the influence of work stage rotation and inclination little, thereby the complexity of calculating that can dip is saved the time of measuring.
Description of drawings
Shown in Figure 1 is the structural representation of the litho machine with vertical position measuring system of preferred embodiment of the present invention.
Fig. 2 is the vertical position measuring system position view of first embodiment of the invention.
Shown in Figure 3 is the structural representation of light beam generation/sniffer among Fig. 2.
Fig. 4 overlooks the application principle synoptic diagram for the vertical position measuring system of first embodiment of the invention.
Shown in Figure 5 is the corrective system synoptic diagram of corner reflector in the measuring system of vertical position.
Shown in Figure 6 is the vertical position measuring system position view of second embodiment of the invention.
Fig. 7-9 is depicted as the vertical position measuring system structural representation in the prior art.
Embodiment
In order more to understand technology contents of the present invention, special act specific embodiment also cooperates appended graphic explanation following.
Shown in Figure 1 is the structural representation of the litho machine with vertical position measuring system of preferred embodiment of the present invention.
Litho machine comprises mask 11, first work stage 12, object lens 13, silicon chip 14 and second work stage 15 successively along optical axis.First work stage 12 is carried mask 11, the second work stage 15 and is carried silicon chip 14.Light beam makes public through mask 11 and 13 pairs of silicon chips 14 of object lens.Vertical position provided by the invention measuring system 16 correspondence respectively is arranged on first work stage 12 and second work stage, 15 sides, with the z that measures first work stage 12 and second work stage 15 to the position.
Fig. 2 is the vertical position measuring system position view of first embodiment of the invention.
Serve as that the work stage of carrying silicon chip is an example with work stage 5 in the present embodiment, comprise on it that 13 pairs of silicon chips of object lens make public.
The x of work stage 5 to both sides first corner reflector 41 and second corner reflector 42 are installed respectively.Each corner reflector 41,42 is made up of two strip reflecting optics of adjacent setting, and in order to guarantee incident ray and reflection ray keeping parallelism, these two strip reflecting optics keep orthogonal position relation.The width of corner reflector 4 is identical with the width of work stage 5, thereby guarantees that in the travel range of work stage 5, the z that the vertical position measuring system all can measure work stage 5 is to the position.
The first light beam generation/sniffer 301 is installed in the position of corresponding first corner reflector 41, in order to generation light beam to the first corner reflector 42, and surveys by 41 beam reflected of first corner reflector.
The second light beam generation/sniffer 302 is installed in the position of corresponding second corner reflector 42, in order to generation light beam to the second corner reflector 42, and surveys by 42 beam reflected of second corner reflector.
The first light beam generation/sniffer 301, the second light beam generation/sniffer 302 are installed on the infrastructural frame of litho machine, so the change in location of the detectable work stage 5 relative datum frameworks of this vertical position measuring system.
The first light beam generation/sniffer 301 is identical with the structure of the second light beam generation/sniffer 302, can be as shown in Figure 3.
Shown in Figure 3 is the structural representation of light beam generation/sniffer among Fig. 2.
With the first light beam generation/sniffer 301 is example, and it comprises laser generator 1, modulated grating 2 and first microcobjective 3 in order to the device that produces light beam, and light beam is produced by laser generator 1, penetrates through the modulated grating 2 and first microcobjective 3.The first light beam generation/sniffer 301 comprises second microcobjective 6, surveys grating 7 and detector 8 in order to the device of detecting light beam.Modulated grating 2 is transmission grating with detection grating 7.Light beam through corner reflector 4 reflection after, through second microcobjective 6, survey grating 7 and inject detector 8.Detector 8 can the skew of detecting light beam on the z direction of principal axis.
As shown in Figure 2, when work stage 5 when the z axle moves to dotted line position because corner reflector is to the geometric relationship of beam reflection, the light beam that beam generated device sends can reflect with shown in the dotted line, when the light beam that measures moves Δ z
0Apart from the time, show that then work stage 5 with respect to the z of infrastructural frame to displacement is:
Δz=Δz
0/2
Those skilled in the art can know; The work stage 5 here can be for carrying mask or the work stage of silicon chip 5; Also can be other machine table, as long as catoptron 4 is installed on work stage 5, and light beam generation/sniffer be installed on the reference position; Can reach the object of the invention, will not limit for environment for use the present invention.
Fig. 4 overlooks the application principle synoptic diagram for the vertical position measuring system of first embodiment of the invention.
As shown in Figure 4, the z of two light beam generation/sniffers, 301,302 real-time measuring workpieces platforms, 5 both sides on the y direction is to the position.Because two light beam generations/sniffers the 301, the 302nd, to setting, therefore, the measurement point of x on the corner reflector 4 of both sides be along with work stage 5 moves in the make progress variation of position of x along x, but work stage 5 at x to the mobile position that does not influence measurement point.
In the litho machine course of work, litho machine is to each makes public successively on the silicon chip.Work stage z is when in system each being made public to the major responsibility of control, makes remaining on the focal plane of projection objective of making public.As the measuring system of measuring workpieces platform vertical position, must measure the work stage height of current exposure field position, the current z of so-called work stage is meant also that to the position z of upper surface exposure center of work stage 5 is to height.When system to (x0, y0) field of position is when making public, work stage 5 just moves to horizontal level and is (x0, place y0).As shown in Figure 4, this moment, the z of work stage 5 to the position was:
Wherein, k be the x of work stage 5 to width, promptly work stage x to about two distances of measuring faces; (x
0, y
0) be the current location of work stage 5; z
1, z
2Be respectively work stage z that the first light beam generation/sniffer 301 and the second light beam generation/sniffer 302 record to the position.By this measurement structure, can record another location parameter R of work stage 5 simultaneously
y, promptly work stage 5 y to inclined degree, its computing formula is:
Shown in Figure 5 is the corrective system synoptic diagram of corner reflector in the measuring system of vertical position.
This measurement structure through the corner reflector folded light beam of work stage 5 sides, detector on the infrastructural frame survey come measuring workpieces platform 5 in institute beam reflected position z to the position.As the measuring mechanism of measuring workpieces platform z, generally require measuring accuracy to reach below 10 nanometers to the position.Rise and fall if the reflecting surface of the reflecting glass in the corner reflector exists, then can reduce the precision of measurement.The corner reflector that is installed in work stage 5 both sides is the strip structure, and the width of length and work stage 5 is suitable, need reach about 30cm.When processing the optical device of large scale so, machining precision is difficult to reach within 10 nanometers, and best level also will reach more than 100 nanometers.Therefore for this measurement structure can normally be used, also need carry out minute surface and proofread and correct measurement result.
The wherein a kind of bearing calibration that can adopt is as shown in Figure 5.Corrective system comprises focusing and leveling sensor 9, and focusing and leveling sensor 9 can make it to be positioned on preposition and the focus according to sensing silicon chip 14 positions adjustment work stage 5.The minute surface pattern can adopt the average method of asking of repeatedly measuring.
Bearing calibration comprises the following steps: to upload a ultra flat silicon chip 14 on work stage 5, and the height of work stage is by the control of vertical position measuring system, thereby the silicon chip upper level z that measured by focusing and leveling sensor this moment is comprising work stage height z
Height, silicon chip pattern z
WafermapAnd the minute surface pattern z of vertical position measuring system
Mirrormap:
z=z
height+z
wafermap+z
mirrormap
Work stage height z
HeightBeing the amount of setting, is known quantity therefore.For different silicon chips, silicon chip pattern z
WafermapFace shape for random fluctuation.In order to obtain above-mentioned minute surface pattern z
Mirrormap, need be with the filtering from measured value of silicon chip face shape.Particularly, can be through repeatedly repeating above-mentioned measurement, measurement result is average, thereby with the silicon chip face shape filtering of random fluctuation.
In like manner, silicon chip pattern z
WafermapTo the amount of influence of the measured value Ry of the vertical position measuring system same measuring method of can sampling.Its measuring process can with z to face just as the time carry out.
Ry=Ry
height+Ry
wafermap+Ry
mirrormap
Ry
HeightFor work stage y to the amount of setting of inclined degree Ry, Ry
WafermapFor Ry to the silicon chip pattern, Ry
MirrormapFor Ry to the minute surface pattern, through filtering silicon chip face shape, can from the measurement result of focusing and leveling sensor, obtain Ry to the minute surface pattern.
Shown in Figure 6 is the vertical position measuring system position view of second embodiment of the invention.
The vertical position measuring system of second embodiment comprises the 3rd light beam generation/sniffer 303; Be positioned at the same side of work stage 5 with the second light beam generation/sniffer 302; In order to generation light beam to the second corner reflector 42, and survey by 42 beam reflected of second corner reflector.
Under this structure, 3 light beam generation/sniffers can be distinguished the vertical height of three positions on the measuring workpieces platform.Therefore, this system is except Z and R that can the measuring workpieces platform
yOutside (work stage y to inclined degree), native system can also utilize following formula measuring workpieces platform x to inclined degree R
x:
Wherein, z
2, z
3Be respectively work stage z that the second light beam generation/sniffer 302 and the 3rd light beam generation/sniffer 303 record to the position, d is the distance between the second light beam generation/sniffer 302 and the 3rd light beam generation/sniffer 303.
R
xTo the minute surface pattern to measured value R
xThe amount of influence can adopt similar R
y, z is to the measuring method of minute surface pattern, its measuring process can with z to, R
yTo face just as the time carry out.
Rx=Rx
height+Rx
wafermap+Rx
mirrormap
Wherein, R
XheightFor work stage x to the settings of inclined degree Rx, R
XwafermapFor Rx to the silicon chip pattern, R
XmirrormapFor Rx to the minute surface pattern.Through a plurality of different silicon chips are measured, filtering silicon chip face shape can obtain R from the measurement result of focusing and leveling sensor
xTo the minute surface pattern.
Though the present invention discloses as above with preferred embodiment, so it is not in order to limit the present invention.Have common knowledge the knowledgeable in the technical field under the present invention, do not breaking away from the spirit and scope of the present invention, when doing various changes and retouching.Therefore, protection scope of the present invention is as the criterion when looking claims person of defining.
Claims (6)
1. the vertical position measuring system of a work stage is characterized in that, comprising:
First corner reflector and second corner reflector, the x that is installed in said work stage respectively to both sides, said first corner reflector and second corner reflector comprise two reflecting optics, said two reflecting optics connect into the right angle;
The first light beam generation/sniffer corresponding to the position of said first corner reflector, in order to producing light beam to said first corner reflector, and is surveyed the beam reflected by said first corner reflector institute;
The second light beam generation/sniffer; Position corresponding to said second corner reflector; In order to produce light beam to said second corner reflector; And survey the beam reflected by said second corner reflector institute, the said first light beam generation/sniffer and the second light beam generation/sniffer are installed on the reference position of said work stage, do not move with this work stage.
2. the vertical position measuring system of work stage according to claim 1 is characterized in that, according to formula
The z that can obtain said work stage is to the position, wherein k be the x of said work stage to width, (x
0, y
0) be the current location of said work stage, z
1, z
2The z that is respectively the said work stage that said first light beam generation/sniffer and the said second light beam generation/sniffer record is to the position.
3. the vertical position measuring system of work stage according to claim 1 is characterized in that, according to formula
Obtain said work stage y to inclined degree Ry.
4. the vertical position measuring system of work stage according to claim 1 is characterized in that, the width of said corner reflector and said work stage x to width identical.
5. the vertical position measuring system of work stage according to claim 1 is characterized in that, said work stage is the work stage that is used to carry silicon chip or mask in the litho machine.
6. the vertical position measuring system of work stage according to claim 1 is characterized in that, also comprises:
The 3rd light beam generation/sniffer is positioned at the same side of said work stage with the said second light beam generation/sniffer, in order to producing light beam to said second corner reflector, and surveys the beam reflected by said second corner reflector institute;
According to formula
Obtain said work stage x to inclined degree Rx, z wherein
2, z
3The z that is respectively the said work stage that said second light beam generation/sniffer and said the 3rd light beam generation/sniffer record is to the position, and d is the distance between said second light beam generation/sniffer and said the 3rd light beam generation/sniffer.
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Cited By (6)
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CN106931884A (en) * | 2017-04-14 | 2017-07-07 | 北京航空航天大学 | The measuring system and its measuring method of Micro and nano manipulation platform Three Degree Of Freedom |
CN106931890A (en) * | 2017-04-14 | 2017-07-07 | 北京航空航天大学 | The precision measurement system and its measuring method of Micro and nano manipulation platform displacement and the anglec of rotation |
CN106959074A (en) * | 2017-03-21 | 2017-07-18 | 北京航空航天大学 | It is a kind of to be used for the glasses-selecting equipment of micro-nano movement and rotation angle measurement |
CN107783379A (en) * | 2016-08-30 | 2018-03-09 | 上海微电子装备(集团)股份有限公司 | A kind of vertical position measurement device and compensation method and a kind of litho machine |
CN110421860A (en) * | 2019-08-21 | 2019-11-08 | 业成科技(成都)有限公司 | The applying method of abutted equipment and eyeglass |
CN110514139A (en) * | 2019-08-13 | 2019-11-29 | 桂林电子科技大学 | A kind of the reflecting mirror surface shape change detecting device and method of laser interferometry system |
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Cited By (9)
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---|---|---|---|---|
CN107783379A (en) * | 2016-08-30 | 2018-03-09 | 上海微电子装备(集团)股份有限公司 | A kind of vertical position measurement device and compensation method and a kind of litho machine |
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CN106931890A (en) * | 2017-04-14 | 2017-07-07 | 北京航空航天大学 | The precision measurement system and its measuring method of Micro and nano manipulation platform displacement and the anglec of rotation |
CN106931890B (en) * | 2017-04-14 | 2019-05-17 | 北京航空航天大学 | The precision measurement system and its measurement method of Micro and nano manipulation platform displacement and rotation angle |
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CN110514139A (en) * | 2019-08-13 | 2019-11-29 | 桂林电子科技大学 | A kind of the reflecting mirror surface shape change detecting device and method of laser interferometry system |
CN110421860A (en) * | 2019-08-21 | 2019-11-08 | 业成科技(成都)有限公司 | The applying method of abutted equipment and eyeglass |
CN110421860B (en) * | 2019-08-21 | 2021-08-24 | 业成科技(成都)有限公司 | Laminating equipment and laminating method of lens |
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Application publication date: 20120509 |