CN102443312B - 硒/1b族/3a族油墨以及制备和使用它的方法 - Google Patents

硒/1b族/3a族油墨以及制备和使用它的方法 Download PDF

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Publication number
CN102443312B
CN102443312B CN201110383247.2A CN201110383247A CN102443312B CN 102443312 B CN102443312 B CN 102443312B CN 201110383247 A CN201110383247 A CN 201110383247A CN 102443312 B CN102443312 B CN 102443312B
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CN
China
Prior art keywords
group
selenium
component
liquid carrier
ink
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201110383247.2A
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English (en)
Chinese (zh)
Other versions
CN102443312A (zh
Inventor
K·卡尔奇亚
D·莫斯利
D·L·索尔森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials International LLC
Original Assignee
Rohm and Haas Electronic Materials LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
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Publication of CN102443312A publication Critical patent/CN102443312A/zh
Application granted granted Critical
Publication of CN102443312B publication Critical patent/CN102443312B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/02—Printing inks
    • C09D11/03—Printing inks characterised by features other than the chemical nature of the binder
    • C09D11/037—Printing inks characterised by features other than the chemical nature of the binder characterised by the pigment
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/52—Electrically conductive inks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
  • Photovoltaic Devices (AREA)
CN201110383247.2A 2010-09-30 2011-09-30 硒/1b族/3a族油墨以及制备和使用它的方法 Expired - Fee Related CN102443312B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/895,297 US8282995B2 (en) 2010-09-30 2010-09-30 Selenium/group 1b/group 3a ink and methods of making and using same
US12/895,297 2010-09-30

Publications (2)

Publication Number Publication Date
CN102443312A CN102443312A (zh) 2012-05-09
CN102443312B true CN102443312B (zh) 2014-11-26

Family

ID=45832795

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201110383247.2A Expired - Fee Related CN102443312B (zh) 2010-09-30 2011-09-30 硒/1b族/3a族油墨以及制备和使用它的方法

Country Status (7)

Country Link
US (1) US8282995B2 (enExample)
JP (1) JP5912372B2 (enExample)
KR (1) KR101840303B1 (enExample)
CN (1) CN102443312B (enExample)
DE (1) DE102011115311A1 (enExample)
FR (1) FR2965566A1 (enExample)
TW (1) TWI414566B (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160345631A1 (en) 2005-07-19 2016-12-01 James Monsees Portable devices for generating an inhalable vapor
US8309179B2 (en) * 2009-09-28 2012-11-13 Rohm And Haas Electronics Materials Llc Selenium/group 1b ink and methods of making and using same
WO2011146115A1 (en) 2010-05-21 2011-11-24 Heliovolt Corporation Liquid precursor for deposition of copper selenide and method of preparing the same
US9142408B2 (en) 2010-08-16 2015-09-22 Alliance For Sustainable Energy, Llc Liquid precursor for deposition of indium selenide and method of preparing the same
KR20130143031A (ko) 2010-09-15 2013-12-30 프리커서 에너제틱스, 인코퍼레이티드. 광기전체를 위한 어닐링 방법
US8372485B2 (en) * 2011-02-18 2013-02-12 Rohm And Haas Electronic Materials Llc Gallium ink and methods of making and using same
US8343267B2 (en) * 2011-02-18 2013-01-01 Rohm And Haas Electronic Materials Llc Gallium formulated ink and methods of making and using same
EP2647595A2 (en) * 2012-04-03 2013-10-09 Neo Solar Power Corp. Ink composition, chalcogenide semiconductor film, photovoltaic device and methods for forming the same
WO2013159864A1 (en) * 2012-04-27 2013-10-31 Merck Patent Gmbh Preparation of semiconductor films
US9105797B2 (en) 2012-05-31 2015-08-11 Alliance For Sustainable Energy, Llc Liquid precursor inks for deposition of In—Se, Ga—Se and In—Ga—Se
WO2014072833A2 (en) * 2012-11-09 2014-05-15 Nanoco Technologies, Ltd. Molybdenum substrates for cigs photovoltaic devices
US10279934B2 (en) 2013-03-15 2019-05-07 Juul Labs, Inc. Fillable vaporizer cartridge and method of filling
PL3504991T3 (pl) 2013-12-23 2021-08-16 Juul Labs International Inc. Systemy urządzeń do odparowywania
USD825102S1 (en) 2016-07-28 2018-08-07 Juul Labs, Inc. Vaporizer device with cartridge
US10076139B2 (en) 2013-12-23 2018-09-18 Juul Labs, Inc. Vaporizer apparatus
USD842536S1 (en) 2016-07-28 2019-03-05 Juul Labs, Inc. Vaporizer cartridge
US20160366947A1 (en) 2013-12-23 2016-12-22 James Monsees Vaporizer apparatus
US10058129B2 (en) 2013-12-23 2018-08-28 Juul Labs, Inc. Vaporization device systems and methods
US10159282B2 (en) 2013-12-23 2018-12-25 Juul Labs, Inc. Cartridge for use with a vaporizer device
EP4464356A3 (en) 2014-12-05 2025-01-08 Juul Labs, Inc. Calibrated dose control
DE202017007467U1 (de) 2016-02-11 2021-12-08 Juul Labs, Inc. Befüllbare Verdampferkartusche
EA039727B1 (ru) 2016-02-11 2022-03-04 Джуул Лэбз, Инк. Надежно прикрепляющиеся картриджи для испарительных устройств
US10405582B2 (en) 2016-03-10 2019-09-10 Pax Labs, Inc. Vaporization device with lip sensing
USD849996S1 (en) 2016-06-16 2019-05-28 Pax Labs, Inc. Vaporizer cartridge
USD836541S1 (en) 2016-06-23 2018-12-25 Pax Labs, Inc. Charging device
USD851830S1 (en) 2016-06-23 2019-06-18 Pax Labs, Inc. Combined vaporizer tamp and pick tool
USD848057S1 (en) 2016-06-23 2019-05-07 Pax Labs, Inc. Lid for a vaporizer
USD887632S1 (en) 2017-09-14 2020-06-16 Pax Labs, Inc. Vaporizer cartridge

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7663057B2 (en) * 2004-02-19 2010-02-16 Nanosolar, Inc. Solution-based fabrication of photovoltaic cell

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4520010A (en) 1983-06-02 1985-05-28 Xerox Corporation Process for modifying the electrical properties of selenium, and selenium alloys
GB8715082D0 (en) 1987-06-26 1987-08-05 Prutec Ltd Solar cells
WO1993004212A1 (en) 1991-08-26 1993-03-04 Eastman Kodak Company Preparation of group iii element-group vi element compound films
US6126740A (en) 1995-09-29 2000-10-03 Midwest Research Institute Solution synthesis of mixed-metal chalcogenide nanoparticles and spray deposition of precursor films
GB9711799D0 (en) 1997-06-07 1997-08-06 Vecht Aron Preparation of sulphides and selenides
WO2001037324A1 (en) 1999-11-16 2001-05-25 Midwest Research Institute A NOVEL PROCESSING APPROACH TOWARDS THE FORMATION OF THIN-FILM Cu(In,Ga)Se¿2?
CN100490205C (zh) 2003-07-10 2009-05-20 国际商业机器公司 淀积金属硫族化物膜的方法和制备场效应晶体管的方法
US6875661B2 (en) 2003-07-10 2005-04-05 International Business Machines Corporation Solution deposition of chalcogenide films
US7163835B2 (en) 2003-09-26 2007-01-16 E. I. Du Pont De Nemours And Company Method for producing thin semiconductor films by deposition from solution
US20070166453A1 (en) 2004-02-19 2007-07-19 Nanosolar, Inc. High-throughput printing of chalcogen layer
US7306823B2 (en) * 2004-09-18 2007-12-11 Nanosolar, Inc. Coated nanoparticles and quantum dots for solution-based fabrication of photovoltaic cells
US20080124831A1 (en) 2004-02-19 2008-05-29 Robinson Matthew R High-throughput printing of semiconductor precursor layer from chalcogenide particles
US7115304B2 (en) 2004-02-19 2006-10-03 Nanosolar, Inc. High throughput surface treatment on coiled flexible substrates
US7494841B2 (en) 2006-05-12 2009-02-24 International Business Machines Corporation Solution-based deposition process for metal chalcogenides
US8057850B2 (en) 2006-11-09 2011-11-15 Alliance For Sustainable Energy, Llc Formation of copper-indium-selenide and/or copper-indium-gallium-selenide films from indium selenide and copper selenide precursors
EP2101931B1 (en) 2006-11-09 2015-05-13 Alliance for Sustainable Energy, LLC Precursors for formation of copper selenide, indium selenide, copper indium diselenide, and/or copper indium gallium diselenide films
WO2008095146A2 (en) 2007-01-31 2008-08-07 Van Duren Jeroen K J Solar cell absorber layer formed from metal ion precursors
KR101030780B1 (ko) 2007-11-14 2011-04-27 성균관대학교산학협력단 Ⅰ－ⅲ－ⅵ２ 나노입자의 제조방법 및 다결정 광흡수층박막의 제조방법
US8613973B2 (en) 2007-12-06 2013-12-24 International Business Machines Corporation Photovoltaic device with solution-processed chalcogenide absorber layer
CN101471394A (zh) 2007-12-29 2009-07-01 中国科学院上海硅酸盐研究所 铜铟镓硫硒薄膜太阳电池光吸收层的制备方法
US20090260670A1 (en) * 2008-04-18 2009-10-22 Xiao-Chang Charles Li Precursor ink for producing IB-IIIA-VIA semiconductors
US8308973B2 (en) * 2009-07-27 2012-11-13 Rohm And Haas Electronic Materials Llc Dichalcogenide selenium ink and methods of making and using same
US8309179B2 (en) * 2009-09-28 2012-11-13 Rohm And Haas Electronics Materials Llc Selenium/group 1b ink and methods of making and using same
US20110076798A1 (en) * 2009-09-28 2011-03-31 Rohm And Haas Electronic Materials Llc Dichalcogenide ink containing selenium and methods of making and using same
US8119506B2 (en) * 2010-05-18 2012-02-21 Rohm And Haas Electronic Materials Llc Group 6a/group 3a ink and methods of making and using same
US8709917B2 (en) * 2010-05-18 2014-04-29 Rohm And Haas Electronic Materials Llc Selenium/group 3A ink and methods of making and using same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7663057B2 (en) * 2004-02-19 2010-02-16 Nanosolar, Inc. Solution-based fabrication of photovoltaic cell

Also Published As

Publication number Publication date
JP5912372B2 (ja) 2016-04-27
DE102011115311A1 (de) 2012-04-05
JP2012102319A (ja) 2012-05-31
US8282995B2 (en) 2012-10-09
TW201224071A (en) 2012-06-16
KR101840303B1 (ko) 2018-03-20
CN102443312A (zh) 2012-05-09
FR2965566A1 (fr) 2012-04-06
TWI414566B (zh) 2013-11-11
US20120082794A1 (en) 2012-04-05
KR20120034040A (ko) 2012-04-09

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Granted publication date: 20141126

Termination date: 20200930