KR101840303B1 - 셀레늄/1ｂ족/3ａ족 잉크, 및 그의 제조방법 및 사용방법 - Google Patents

셀레늄/1ｂ족/3ａ족 잉크, 및 그의 제조방법 및 사용방법 Download PDF

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Publication number
KR101840303B1
KR101840303B1 KR1020110099565A KR20110099565A KR101840303B1 KR 101840303 B1 KR101840303 B1 KR 101840303B1 KR 1020110099565 A KR1020110099565 A KR 1020110099565A KR 20110099565 A KR20110099565 A KR 20110099565A KR 101840303 B1 KR101840303 B1 KR 101840303B1
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South Korea
Prior art keywords
group
selenium
component
liquid carrier
organic chalcogenide
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Expired - Fee Related
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English (en)
Korean (ko)
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KR20120034040A (ko
Inventor
케빈 칼지아
데이비드 모슬리
데이비드 엘. 토센
Original Assignee
롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/02—Printing inks
    • C09D11/03—Printing inks characterised by features other than the chemical nature of the binder
    • C09D11/037—Printing inks characterised by features other than the chemical nature of the binder characterised by the pigment
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/52—Electrically conductive inks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
  • Photovoltaic Devices (AREA)
KR1020110099565A 2010-09-30 2011-09-30 셀레늄/1ｂ족/3ａ족 잉크, 및 그의 제조방법 및 사용방법 Expired - Fee Related KR101840303B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/895,297 US8282995B2 (en) 2010-09-30 2010-09-30 Selenium/group 1b/group 3a ink and methods of making and using same
US12/895,297 2010-09-30

Publications (2)

Publication Number Publication Date
KR20120034040A KR20120034040A (ko) 2012-04-09
KR101840303B1 true KR101840303B1 (ko) 2018-03-20

Family

ID=45832795

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110099565A Expired - Fee Related KR101840303B1 (ko) 2010-09-30 2011-09-30 셀레늄/1ｂ족/3ａ족 잉크, 및 그의 제조방법 및 사용방법

Country Status (7)

Country Link
US (1) US8282995B2 (enExample)
JP (1) JP5912372B2 (enExample)
KR (1) KR101840303B1 (enExample)
CN (1) CN102443312B (enExample)
DE (1) DE102011115311A1 (enExample)
FR (1) FR2965566A1 (enExample)
TW (1) TWI414566B (enExample)

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US8309179B2 (en) * 2009-09-28 2012-11-13 Rohm And Haas Electronics Materials Llc Selenium/group 1b ink and methods of making and using same
WO2011146115A1 (en) 2010-05-21 2011-11-24 Heliovolt Corporation Liquid precursor for deposition of copper selenide and method of preparing the same
US9142408B2 (en) 2010-08-16 2015-09-22 Alliance For Sustainable Energy, Llc Liquid precursor for deposition of indium selenide and method of preparing the same
KR20130143031A (ko) 2010-09-15 2013-12-30 프리커서 에너제틱스, 인코퍼레이티드. 광기전체를 위한 어닐링 방법
US8372485B2 (en) * 2011-02-18 2013-02-12 Rohm And Haas Electronic Materials Llc Gallium ink and methods of making and using same
US8343267B2 (en) * 2011-02-18 2013-01-01 Rohm And Haas Electronic Materials Llc Gallium formulated ink and methods of making and using same
EP2647595A2 (en) * 2012-04-03 2013-10-09 Neo Solar Power Corp. Ink composition, chalcogenide semiconductor film, photovoltaic device and methods for forming the same
WO2013159864A1 (en) * 2012-04-27 2013-10-31 Merck Patent Gmbh Preparation of semiconductor films
US9105797B2 (en) 2012-05-31 2015-08-11 Alliance For Sustainable Energy, Llc Liquid precursor inks for deposition of In—Se, Ga—Se and In—Ga—Se
WO2014072833A2 (en) * 2012-11-09 2014-05-15 Nanoco Technologies, Ltd. Molybdenum substrates for cigs photovoltaic devices
US10279934B2 (en) 2013-03-15 2019-05-07 Juul Labs, Inc. Fillable vaporizer cartridge and method of filling
PL3504991T3 (pl) 2013-12-23 2021-08-16 Juul Labs International Inc. Systemy urządzeń do odparowywania
USD825102S1 (en) 2016-07-28 2018-08-07 Juul Labs, Inc. Vaporizer device with cartridge
US10076139B2 (en) 2013-12-23 2018-09-18 Juul Labs, Inc. Vaporizer apparatus
USD842536S1 (en) 2016-07-28 2019-03-05 Juul Labs, Inc. Vaporizer cartridge
US20160366947A1 (en) 2013-12-23 2016-12-22 James Monsees Vaporizer apparatus
US10058129B2 (en) 2013-12-23 2018-08-28 Juul Labs, Inc. Vaporization device systems and methods
US10159282B2 (en) 2013-12-23 2018-12-25 Juul Labs, Inc. Cartridge for use with a vaporizer device
EP4464356A3 (en) 2014-12-05 2025-01-08 Juul Labs, Inc. Calibrated dose control
DE202017007467U1 (de) 2016-02-11 2021-12-08 Juul Labs, Inc. Befüllbare Verdampferkartusche
EA039727B1 (ru) 2016-02-11 2022-03-04 Джуул Лэбз, Инк. Надежно прикрепляющиеся картриджи для испарительных устройств
US10405582B2 (en) 2016-03-10 2019-09-10 Pax Labs, Inc. Vaporization device with lip sensing
USD849996S1 (en) 2016-06-16 2019-05-28 Pax Labs, Inc. Vaporizer cartridge
USD836541S1 (en) 2016-06-23 2018-12-25 Pax Labs, Inc. Charging device
USD851830S1 (en) 2016-06-23 2019-06-18 Pax Labs, Inc. Combined vaporizer tamp and pick tool
USD848057S1 (en) 2016-06-23 2019-05-07 Pax Labs, Inc. Lid for a vaporizer
USD887632S1 (en) 2017-09-14 2020-06-16 Pax Labs, Inc. Vaporizer cartridge

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US20080142082A1 (en) 2004-02-19 2008-06-19 Dong Yu Solution-based fabrication of photovoltaic cell
WO2009064056A1 (en) 2007-11-14 2009-05-22 Sungkyunkwan University Foundation For Corporate Collaboration Synthesis of i-iii-vi2 nanoparticles and fabrication of polycrystalline absorber layers
US20090260670A1 (en) 2008-04-18 2009-10-22 Xiao-Chang Charles Li Precursor ink for producing IB-IIIA-VIA semiconductors

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US8308973B2 (en) * 2009-07-27 2012-11-13 Rohm And Haas Electronic Materials Llc Dichalcogenide selenium ink and methods of making and using same
US8309179B2 (en) * 2009-09-28 2012-11-13 Rohm And Haas Electronics Materials Llc Selenium/group 1b ink and methods of making and using same
US20110076798A1 (en) * 2009-09-28 2011-03-31 Rohm And Haas Electronic Materials Llc Dichalcogenide ink containing selenium and methods of making and using same
US8119506B2 (en) * 2010-05-18 2012-02-21 Rohm And Haas Electronic Materials Llc Group 6a/group 3a ink and methods of making and using same
US8709917B2 (en) * 2010-05-18 2014-04-29 Rohm And Haas Electronic Materials Llc Selenium/group 3A ink and methods of making and using same

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US20080142082A1 (en) 2004-02-19 2008-06-19 Dong Yu Solution-based fabrication of photovoltaic cell
WO2008057119A1 (en) 2006-11-09 2008-05-15 Midwest Research Institue Formation of copper-indium-selenide and/or copper-indium-gallium-selenide films from indium selenide and copper selenide precursors
US20090280598A1 (en) 2006-11-09 2009-11-12 Midwest Research Institute Formation of Copper-Indium-Selenide and/or Copper-Indium-Gallium-Selenide Films from Indium Selenide and Copper Selenide Precursors
WO2009064056A1 (en) 2007-11-14 2009-05-22 Sungkyunkwan University Foundation For Corporate Collaboration Synthesis of i-iii-vi2 nanoparticles and fabrication of polycrystalline absorber layers
US20090260670A1 (en) 2008-04-18 2009-10-22 Xiao-Chang Charles Li Precursor ink for producing IB-IIIA-VIA semiconductors

Also Published As

Publication number Publication date
JP5912372B2 (ja) 2016-04-27
DE102011115311A1 (de) 2012-04-05
JP2012102319A (ja) 2012-05-31
US8282995B2 (en) 2012-10-09
TW201224071A (en) 2012-06-16
CN102443312B (zh) 2014-11-26
CN102443312A (zh) 2012-05-09
FR2965566A1 (fr) 2012-04-06
TWI414566B (zh) 2013-11-11
US20120082794A1 (en) 2012-04-05
KR20120034040A (ko) 2012-04-09

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