CN102437155A

CN102437155A - High working voltage light emitting diode (LED) protection diode and structure thereof and corresponding manufacturing method

Info

Publication number: CN102437155A
Application number: CN2011104095134A
Authority: CN
Inventors: 王英杰; 王平; 韩健; 崔建; 徐敏杰
Original assignee: Hangzhou Silan Integrated Circuit Co Ltd
Current assignee: Hangzhou Silan Integrated Circuit Co Ltd
Priority date: 2011-12-09
Filing date: 2011-12-09
Publication date: 2012-05-02
Anticipated expiration: 2031-12-09
Also published as: CN102437155B

Abstract

The invention provides a high working voltage light emitting diode (LED) protection diode, which comprises a positive-negative-positive (PNP) triode, an NPN triode, a P/N+ backward diode, a P/N extension diode and a P/N+ forward diode module; a transmission electrode of the PNP triode is connected with a cathode of the P/N extension diode, a basic electrode of the PNP triode and a cathode of the P/N+ backward triode are connected with a collector electrode of the PNP triode, the collector electrode of the PNP triode is connected with a basic electrode of the NPN triode, a transmission electrode of the NPN triode is connected with an anode of the P/N+ forward diode module, and the cathode of the P/N+ forward diode module is connected with the anode of the P/N extension diode and the anode of the P/N+ backward diode. Due to the adoption of the high working voltage LED protection diode, after one LED of a high working voltage LED circuit which is formed by serially joining a plurality of LEDs is damaged, the LED protection diode can be rapidly triggered and started through a small current so as to guarantee the continuous normal work of other LED.

Description

High working voltage LED protection diode and structure and corresponding method of manufacture

Technical field

The invention belongs to luminescent device and make the field, relate to a kind of technology of LED protection diode, relate in particular to a kind of structural design and manufacturing that is applied to the LED protection diode of more number LED series connection formation.

Background technology

Advantages such as volume is little, in light weight because light-emitting diode (LED) has, the life-span is long, and along with the exploitation that with the nitride is the high-brightness LED application on basis, new generation of green environmental protection solid light source nitride LED has become the emphasis of research.Simultaneously, along with the application of led function property lighting field is fast-developing, the high-voltage LED device will become a development trend in the lighting field, and be widely used in lighting, stop-light, the electronic data display.

It is example that more common at present a kind of more number LED series connection forms the high working voltage led circuit, can be referring to Fig. 1.More number LED number series connection back forms high working voltage illuminating circuit 1; High working voltage illuminating circuit 1 is mixed suitable constant-current drive circuit 2; Formed LED illumination, display unit jointly, wherein, the output of said constant-current drive circuit 2 is connected to the input of said illuminating circuit 1.For high working voltage illuminating circuit 1, as long as damaging, wherein arbitrary LED will cause the LED on the whole high working voltage illuminating circuit 1 to extinguish, seriously also can cause the damage of other LED parallelly connected with the branch road of said arbitrary LED damage.Therefore; Want to make the use of high working voltage illuminating circuit 1 in various environment of more number LED series connection; Just must be when the high working voltage illuminating circuit 1 that described more number LED series connection is formed be protected; Also need protect constant-current drive circuit 2, in order to avoid high working voltage illuminating circuit 1 is when damaging, and the problem that cause constant-current drive circuit 2 lost efficacy excessive thereupon the change in voltage on the constant-current drive circuit 2.

In order to address the above problem; Hope on the one hand that when utilizing LED the load light source that forms through more number LED series connection is fast-developing with the application of tackling following led function property lighting field, thereby impel the extensive use of high working voltage LED device as luminescence chip.Another fermentation; In the implementation process of reality, still have problems; Demand introducing the new method that effectively to improve above-mentioned defective urgently, to cause the out of use topmost problem of whole baroluminescence circuit because of arbitrary LED damages in the load light source that solves more number LED formation.

Summary of the invention

Technical problem to be solved by this invention provides a kind of high working voltage LED protection diode and structure and corresponding method of manufacture; To solve high working voltage led circuit that more number LED series connection forms because of after arbitrary LED damages, LED protection diode can trigger startup rapidly to guarantee other LED continuation operate as normal under very little electric current.

For addressing the above problem, a kind of high working voltage LED protection diode that the present invention proposes comprises:

PNP triode, NPN triode, P/N+ backward diode, P/N epitaxial diode and P/N+ forward diode module;

The emitter of said PNP triode is connected with the negative pole of said P/N epitaxial diode; The negative pole of the base stage of said PNP triode and P/N+ backward diode is connected with the collector electrode of NPN triode; The collector electrode of said PNP triode is connected with the base stage of said NPN triode; The emitter of said NPN triode is connected with the positive pole of P/N+ forward diode module, and the negative pole of P/N+ forward diode module is connected with the positive pole anodal and said P/N+ backward diode of said P/N epitaxial diode.

Further; Draw metal aluminium electrode in the positive pole of the negative pole of said P/N+ forward diode module, said P/N epitaxial diode, the anodal junction of said P/N+ backward diode, at the emitter of said PNP triode and the negative pole place extraction electrode of said P/N epitaxial diode.

Accordingly, the invention provides a kind of structure of high working voltage LED protection diode circuit, comprising:

Semiconductor substrate, form N type epitaxial loayer on the said Semiconductor substrate, penetrate that said N type epitaxial loayer links to each other with said Semiconductor substrate first isolate P+, second and isolate P+ and the 3rd isolation P+; Isolate P+ by the said first isolation P+ and said second and constitute first isolated area, isolate P+ by the said second isolation P+ and the said the 3rd and constitute second isolated area;

Form a P base and the 2nd P base of said first isolated area; The first emitter region N+ that forms on the said P base and overlap with a said P base; Form the second emitter region N+ in said the 2nd P base; The P/N+ backward diode that constitutes by said first an emitter region N+ and a said P base; The PNP triode that constitutes by said Semiconductor substrate, the said N type epitaxial loayer that is positioned at said first isolated area and said the 2nd P base, the NPN triode that constitutes by the said N type epitaxial loayer that is positioned at said first isolated area, said the 2nd P base and the said second emitter region N+;

Form on the Semiconductor substrate of said second isolated area, the N+ buried regions in the N type epitaxial loayer bottom section; Form N the 3rd P base in said second isolated area; Form the 3rd emitter region N+ in said each the 3rd P base; By said each the 3rd P base and form N the P/N+ forward diode that the 3rd emitter region N+ in said each the 3rd P base constitutes; Form the 4th P base in said second isolated area, form the right the 4th emitter region N+ in the said N type epitaxial loayer of said second isolated area, by being positioned at the P/N epitaxial diode that the said N type epitaxial loayer of said second isolated area, said the 4th P base and said the right the 4th emitter region N+ constitute;

Be positioned at the lip-deep fairlead window of said structure, each electrode of drawing from said fairlead window;

Be positioned at the back metal of said Semiconductor substrate bottom.

Further, form the left side the 4th emitter region N+ in the said N type epitaxial loayer of said second isolated area.

Further; Comprise that also forming a said P base, the said second emitter region N+, said the 4th P base, said the right the 4th emitter region N+ and said first respectively isolates the fairlead window that P+ and the said the 3rd isolates on the P+, form the 3rd emitter region N+ and the fairlead window on the 3rd P base in said each P/N+ forward diode.

Further, also comprise first electrode in the fairlead window that forms a said P base; Form the said the 3rd the 6th electrode of isolating between the fairlead window of fairlead window and said the right the 4th emitter region N+ of P+; Form on the plane plane electrode that said the 6th electrode is linked to each other with first electrode is arranged; Like said N is 1, forms second electrode between the fairlead window of fairlead window and said the 3rd P base of the said second emitter region N+; Form the 5th electrode between the fairlead window of fairlead window and said the 4th P base of said the 3rd emitter region N+; Like said N is greater than 1 o'clock, forms second electrode between the fairlead window of fairlead window and the 3rd P base in the said P/N+ forward diode of the said second emitter region N+; The electrode that forms between the fairlead window of the 3rd P base in each P/N+ forward diode thereafter and the fairlead window of the 3rd emitter region N+ in the previous P/N+ forward diode forms the 5th electrode between the fairlead window of fairlead window and said the 4th P base of the 3rd emitter region N+ in said N the P/N+ forward diode.

Further, also comprise the passivation layer that forms on the said body structure surface.

Accordingly, the manufacturing approach of a kind of high working voltage LED protection diode circuit that the present invention proposes comprises the steps:

Semiconductor substrate is provided, on said Semiconductor substrate, forms first oxide-film;

Adopt photoetching process in said first oxide-film, to etch N+ buried regions window;

Said N+ buried regions window mixed form the N+ buried regions;

Remove said first oxide-film, deposition N type epitaxial loayer on said Semiconductor substrate and said N+ buried regions;

On said N type epitaxial loayer, form second oxide-film;

Adopt photoetching process in said second oxide-film, to etch P+ diffusion window;

Said P+ diffusion window mixed to form isolate P+;

Remove said second oxide-film, at said N type epitaxial deposition the 3rd oxide-film;

On said the 3rd oxide-film, post-depositional first photoresist is carried out photoetching process, form photoresist P window, said photoresist P window is mixed, remove said first photoresist, form the P base;

On said the 3rd oxide-film, post-depositional second photoresist is carried out photoetching process, form photoresist N+ window, said photoresist N+ window is mixed, remove said second photoresist, form the emitter region;

On said N type epitaxial loayer, adopt chemical vapor deposition method growth regulation four oxide-films;

Adopt annealing process in said emitter region, form emitter region N+;

Adopt photoetching process in said the 4th oxide-film, to etch the fairlead window;

At the surface deposition metal of said the 4th oxide-film and said fairlead window, form electrode;

Back metal is formed on the bottom in said Semiconductor substrate.

Visible by technique scheme; Forming the high working voltage led circuit with a kind of more number LED series connection of traditional common compares; A kind of high working voltage LED protection diode disclosed by the invention is connected with the negative pole of P/N epitaxial diode through the emitter of PNP triode; The negative pole of the base stage of PNP triode and P/N+ backward diode is connected with the collector electrode of NPN triode; The collector electrode of PNP triode is connected with the base stage of NPN triode, and the emitter of NPN triode is connected with the positive pole of P/N+ forward diode module, and the negative pole of P/N+ forward diode module is connected with the positive pole anodal and said P/N+ backward diode of said P/N epitaxial diode.Because said P/N+ forward diode module comprises N P/N+ forward diode; When the operating voltage of a LED higher or on the low side; Can come the voltage of the said P/N+ forward diode module of adjustment synchronously through the number that correspondingly increases or reduce the P/N+ forward diode that is comprised, guarantee that the operating voltage of operating voltage and a said LED after LED protection diode starts is close.Simultaneously; In the manufacture process of high working voltage LED protection diode, also can carry out quantitative selected to the P/N+ forward diode; Then; Positive pole, the negative pole head and the tail of N P/N+ forward diode are connected into one group of continuous P/N+ forward diode successively, and the head and the tail of one group of continuous P/N+ forward diode are anodal, negative pole is respectively said P/N+ forward diode module positive pole, negative pole, can realize that then the voltage of high working voltage LED protection diode is adjustable.Therefore, the operating voltage after LED protection diode starts equals PNP triode, the silicon controlled rectifier voltage of NPN triode composition and the voltage of N P/N+ forward diode, and is close with the operating voltage of a common LED.When the some LED of appearance in the more number LED series circuit damage open circuit; P/N+ backward diode be (base-emitter) electrode direct and the PNP triode is composed in series start-up circuit; When the operating voltage of the LED of said damage during greater than the be forward voltage of P/N+ backward diode and PNP triode; Puncturing appears in the P/N+ backward diode, and the electric current that flows through the P/N+ backward diode increases, and this electric current all passes through from the be electrode of PNP triode; And can under very little electric current, start the SCR structure that NPN, PNP form rapidly, make said LED protection diode circuit get into operating state.

Description of drawings

Fig. 1 is the sketch map that a kind of more number LED series connection forms the high working voltage led circuit in the prior art;

Fig. 2 is the sketch map of a kind of high working voltage LED protection of the present invention diode embodiment 1;

Fig. 3 is the sketch map of a kind of high working voltage LED protection of the present invention diode embodiment 2;

Fig. 4 is a kind of high working voltage LED protection of the present invention diode making process flow process;

Fig. 5 A to Fig. 5 T is a kind of high working voltage LED protection of the present invention diode making process;

Fig. 6 is parallel with the sketch map of the high working voltage LED protection diode of LED for the present invention is a kind of;

Fig. 7 is parallel with the voltage-current curve sketch map of the high working voltage LED protection diode of LED for the present invention is a kind of.

Embodiment

For make above-mentioned purpose of the present invention, feature and advantage can be more obviously understandable, does detailed explanation below in conjunction with the accompanying drawing specific embodiments of the invention.

A lot of details have been set forth in the following description so that make much of the present invention.But the present invention can implement much to be different from alternate manner described here, and those skilled in the art can do similar popularization under the situation of intension of the present invention, so the present invention does not receive the restriction of following disclosed practical implementation.

Secondly, the present invention utilizes sketch map to be described in detail, when the embodiment of the invention is detailed; For ease of explanation; The profile of expression device architecture can be disobeyed general ratio and done local the amplification, and said sketch map is instance, and it should not limit the scope of the present invention's protection at this.The three dimensions size that in actual fabrication, should comprise in addition, length, width and the degree of depth.

At last; For can clear in detail errorless elaboration flesh and blood of the present invention; With first isolated area mentioned among the present invention reference direction as left bit; With second isolated area mentioned among the present invention reference direction, be convenient to description that more details of the present invention are accurately put in place through the use of the left and right noun of locality, so that understand the present invention more fully as right bit.But the present invention can describe much to be different from this orientation, and those skilled in the art can do similar popularization under the situation of intension of the present invention, so the present invention does not receive the restriction of following disclosed practical implementation.

Referring to Fig. 2 and Fig. 3, a kind of high working voltage LED protection diode that the present invention proposes comprises PNP triode 204, NPN triode 210, P/N+ backward diode 208, P/N epitaxial diode 206 and P/N+ forward diode module 212;

The emitter of said PNP triode 204 is connected with the negative pole of said P/N epitaxial diode 206; The negative pole of the base stage of said PNP triode 204 and P/N+ backward diode 208 is connected with the collector electrode of NPN triode 210; The collector electrode of said PNP triode 204 is connected with the base stage of said NPN triode 210; The emitter of said NPN triode 210 is connected with the positive pole of P/N+ forward diode module 212, and the negative pole of P/N+ forward diode module 212 is connected with the positive pole anodal and said P/N+ backward diode 208 of said P/N epitaxial diode 206.

Further, said P/N+ forward diode module 212 comprises N P/N+ forward diode, and N is the positive integer more than or equal to 1.Like said N is 1 o'clock, and the positive pole of said P/N+ forward diode, negative pole are respectively positive pole, the negative pole (referring to Fig. 3) of said P/N+ forward diode module 212; Like said N is greater than 1 o'clock; Said N P/N+ forward diode head and the tail are connected into one group of continuous P/N+ forward diode successively, and the head and the tail of one group of continuous P/N+ forward diode are anodal, negative pole is respectively said P/N+ forward diode module 212 positive pole, negative pole.

Here; Enumerate the situation of N=3; The negative pole that is P/N+ forward diode 214 links to each other with the positive pole of P/N+ forward diode 216, the negative pole of P/N+ forward diode 216 links to each other with the positive pole of P/N+ forward diode 218, and at this moment, the negative pole of the positive pole of said P/N+ forward diode 214 and said P/N+ forward diode 218 is respectively positive pole, the negative pole (referring to Fig. 2) of said P/N+ forward diode module 212; Wherein, N is the positive integer more than or equal to 1.

Wherein, said P/N+ backward diode 208 can be the P/N+P/N+ backward diode; Said P/N+ forward diode can be the P/N+P/N+ forward diode; Said P/N epitaxial diode 206 can be the P/NP/N epitaxial diode.

Further; Draw metal aluminium electrode 200 in the positive pole of the negative pole of said P/N+ forward diode module 212, said P/N epitaxial diode 206, the anodal junction of said P/N+ backward diode 208, at the emitter of said PNP triode 204 and the negative pole place extraction electrode 202 of said P/N epitaxial diode 206.

Based on a kind of high working voltage LED protection diode provided by the invention, referring to Fig. 5 T, protect the structure of diode to be described in detail to described a kind of high working voltage LED, the structure of said a kind of high-voltage LED protection diode comprises:

Semiconductor substrate 500, form N type epitaxial loayer 508 on the said Semiconductor substrate 500, penetrate that said N type epitaxial loayer 508 links to each other with said Semiconductor substrate 500 first isolate P+514_1, second and isolate P+514_2 and the 3rd isolation P+514_3; Isolate P+514_2 by the said first isolation P+514_1 and said second and constitute the first isolated area D1, isolate P+514_3 by the said second isolation P+514_2 and the said the 3rd and constitute the second isolated area D2;

Form a P base 522 and the 2nd P base 524 of the said first isolated area D1; The first emitter region N+538 ' that forms on the said P base 522 and overlap with a said P base 522; Form the second emitter region N+540 ' in said the 2nd P base 524; P/N+ backward diode by said first emitter region N+538 ' and a said P base 522 formations; By said Semiconductor substrate 500, be positioned at the said N type epitaxial loayer 508 of the said first isolated area D1 and the PNP triode that said the 2nd P base 524 constitutes, the NPN triode that constitutes by the said N type epitaxial loayer 508 that is positioned at the said first isolated area D1, said the 2nd P base 524 and the said second emitter region N+540 ';

Form on the Semiconductor substrate 500 of the said second isolated area D2, the N+ buried regions 506 in N type epitaxial loayer 508 bottom sections; Form N the 3rd P base among the said second isolated area D2; Form the 3rd emitter region N+ in said each the 3rd P base; By said each the 3rd P base and be arranged in N the P/N+ forward diode that the 3rd emitter region N+ of said each the 3rd P base constitutes; Form the 4th P base 532 among the said second isolated area D2; Form the right the 4th emitter region N+550 ' in the said N type epitaxial loayer 508 of the said second isolated area D2, by being positioned at the P/N epitaxial diode that the said N type epitaxial loayer 508 of the said second isolated area D2, said the 4th P base 532 and said the right the 4th emitter region N+550 ' constitute;

Further, form the left side the 4th emitter region N+542 ' in the said N type epitaxial loayer of said second isolated area.

Be positioned at a said P base 522, the said second emitter region N+540 ', said the 4th P base 532, the said left side the 4th emitter region N+542 ', said the right the 4th emitter region N+550 ' and said first and isolate P+514_1 and the said the 3rd and isolate on the P+514_3 and have the fairlead window, be arranged on the 3rd emitter region N+ and the 3rd P base of said each P/N+ forward diode and have the fairlead window;

The fairlead window that is arranged in a said P base 522 is formed with the first electrode LA1; Being positioned at the said the 3rd isolates between the fairlead window of fairlead window and said the right the 4th emitter region N+550 ' of P+514_3 and is formed with the 6th electrode LA6; Be positioned at the plane electrode LA (figure does not show) that said the 6th electrode LA6 is linked to each other with the first electrode LA1 is arranged on the plane; Like said N is 1, is positioned between the fairlead window of fairlead window and said the 3rd P base of the said second emitter region N+540 ' and is formed with the second electrode LA2; Between the fairlead window of the fairlead window of said the 3rd emitter region N+ and said the 4th P base 532, be formed with the 5th electrode LA5; Like said N is greater than 1 o'clock, is arranged between the fairlead window of the 3rd P base of fairlead window and a said P/N+ forward diode of the said second emitter region N+540 ' and is formed with the second electrode LA2; Be formed with electrode between the fairlead window of the 3rd P base in each P/N+ forward diode thereafter and the fairlead window of the 3rd emitter region N+ in the previous P/N+ forward diode, be formed with the 5th electrode LA5 between the fairlead window of the fairlead window of the 3rd emitter region N+ in said NP/N+ forward diode and said the 4th P base 532.

, enumerate the situation of N=3 here, promptly be arranged between the fairlead window of the 3rd P base 526 of fairlead window and a said P/N+ forward diode of the said second emitter region N+540 ' and be formed with the second electrode LA2; The fairlead window of the 3rd P base 528 in the 2nd P/N+ forward diode thereafter and the fairlead window of the 3rd P base 530 in the 3rd P/N+ forward diode are formed with third electrode LA3 and the 4th electrode LA4 respectively and between the fairlead window of the fairlead window of the 3rd emitter region N+544 ' in the P/N+ forward diode and the 3rd emitter region N+546 ' in the 2nd P/N+ forward diode; Be arranged between the fairlead window of fairlead window and said the 4th P base 532 of the 3rd emitter region N+548 ' of said the 3rd P/N+ forward diode and be formed with the 5th electrode LA5; Wherein, N is the positive integer more than or equal to 1;

The bottom of said Semiconductor substrate 500 is formed with back metal 570.

Further, the surface of said structure is formed with passivation layer 568.

Referring to Fig. 3, a kind of high working voltage LED protection diode making process flow process provided by the present invention is:

S100: Semiconductor substrate is provided, on said Semiconductor substrate, forms first oxide-film;

S101: adopt photoetching process in said first oxide-film, to etch N+ buried regions window;

S102: said N+ buried regions window mixed forms the N+ buried regions;

S103: remove said first oxide-film, deposition N type epitaxial loayer on said Semiconductor substrate and said N+ buried regions;

S104: on said N type epitaxial loayer, form second oxide-film;

S105: adopt photoetching process in said second oxide-film, to etch P+ diffusion window;

S106: said P+ diffusion window mixed to form isolate P+;

S107: remove said second oxide-film, at said N type epitaxial deposition the 3rd oxide-film;

S108: on said the 3rd oxide-film, post-depositional first photoresist is carried out photoetching process, form photoresist P window, said photoresist P window is mixed, remove said first photoresist, form the P base;

S109: on said the 3rd oxide-film, post-depositional second photoresist is carried out photoetching process, form photoresist N+ window, said photoresist N+ window is mixed, remove said second photoresist, form the emitter region;

S110: on said N type epitaxial loayer, adopt chemical vapor deposition method growth regulation four oxide-films;

S111: adopt annealing process in said emitter region, form emitter region N+;

S112: adopt photoetching process in said the 4th oxide-film, to etch the fairlead window;

S113:, form electrode at the surface deposition metal of said the 4th oxide-film and said fairlead window;

S114: back metal is formed on the bottom in said Semiconductor substrate.

Be example with method flow shown in Figure 4 below,, protect the manufacture craft of diode making process to be described in detail a kind of high working voltage LED in conjunction with accompanying drawing 5A to 5T.

S100: Semiconductor substrate is provided, on said Semiconductor substrate, forms first oxide-film.

Referring to Fig. 5 A, the Semiconductor substrate 500 of a resistivity less than 0.2 Ω cm is provided, the said Semiconductor substrate doped P-type Semiconductor substrate of attaching most importance to is carried out oxidation to the surface of said Semiconductor substrate, and generating thickness is first oxide-film 502 of 0.6～0.8um.

S101: adopt photoetching process in said first oxide-film, to etch N+ buried regions window.

Referring to Fig. 5 B, adopt photoetching process that said first oxide-film 502 is carried out the photoetching etching, in said first oxide-film 502, form N+ buried regions window 504.

S102: said N+ buried regions window mixed forms the N+ buried regions.

Referring to Fig. 5 C, the mode that can adopt N+ injection or N+ to spread is mixed to said N+ buried regions window 504 and is formed N+ buried regions 506, and said N+ buried regions 506 junction depths are 3～5um, and the parameter of square resistance is 15～40 Ω/square.

Said N+ buried regions 506 can prevent that N P/N+ forward diode that subsequent technique processes (here; N=3) such as said Semiconductor substrate 500 respectively and occur parasitic thyristor between the said N type epitaxial loayer 508, said the 3rd P base (referring to Fig. 5 K), said the 3rd emitter region N+ (referring to Fig. 5 P), parasitic thyristor triggering and conducting causes the protection diode disabler of subsequent preparation.

S103: remove said first oxide-film, deposition N type epitaxial loayer on said Semiconductor substrate and said N+ buried regions.

At first; Referring to Fig. 5 D, after employing hydrofluoric acid (HF) is removed said first oxide-film 502, then; Referring to Fig. 5 E; Carrying out deposition N type epitaxial loayer 508 on said Semiconductor substrate 500 and the said N+ buried regions 506, the thickness of said N type epitaxial loayer 508 is 10～14um, and electrical resistivity of epitaxy is 0.5～5 Ω cm.

S104: on said N type epitaxial loayer, form second oxide-film.

Referring to Fig. 5 F. oxidation is carried out on the surface of said N type epitaxial loayer 508, generating thickness is second oxide-film 510 of 0.6～1um.

S105: adopt photoetching process in said second oxide-film, to etch P+ diffusion window.

Referring to Fig. 5 G, adopt photoetching process that said second oxide-film 510 is carried out the photoetching etching, in said second oxide-film 510, form P+ diffusion window.

Said P+ diffusion window comprises that a P+ spreads window 512_1, the 2nd P+ diffusion window 512_2 and the 3 1st P+ diffusion window 512_3, and subsequent technique is made the first isolation P+514_1 (referring to Fig. 5 H), first that is used for isolating device respectively and isolated P+514_2 (referring to Fig. 5 H) and the 3rd isolation P+514_3 (referring to Fig. 5 H).

S106: said P+ diffusion window mixed to form isolate P+.

Referring to Fig. 5 H; The one P+ diffusion window 512_1, the 2nd P+ diffusion window 512_2 and the 3 1st P+ diffusion window 512_3 are carried out doping process; Said alloy can be boron, forms P+ boron diffusion square resistance, and the parameter of said P+ boron diffusion square resistance is 5～7 Ω/square; Junction depth is 10～14um, and said P+ boron diffusion square resistance is as isolating P+.Said isolation P+ links to each other with said Semiconductor substrate 500 parts for penetrating said N type epitaxial loayer 508.

Wherein, said isolation P+ comprises that first isolates P+514_1, the second isolation P+514_2 and the 3rd isolation P+514_3, spreads window 512_3 formation through P+ diffusion window 512_1, the 2nd P+ diffusion window 512_2 and the 3 1st P+ respectively.The said first isolation P+514_1 and said second isolates P+514_2 and forms the first isolated area D1; The said second isolation P+514_2 and the said the 3rd isolates P+514_3 and forms the second isolated area D2.

The subsequent technique that is formed for of said first isolated area D1 and the said second isolated area D2 is realized good insulation performance between the device that forms on the said N type epitaxial loayer 508.

S107: remove said second oxide-film, at said N type epitaxial deposition the 3rd oxide-film.

Referring to Fig. 5 I, remove said second oxide-film 510, oxidation is carried out on the surface of said N type epitaxial loayer 508, generating thickness is the 3rd oxide-film 516 of 0.02～0.08um.

S108: on said the 3rd oxide-film, post-depositional first photoresist is carried out photoetching process, form photoresist P window, said photoresist P window is mixed, remove said first photoresist, form the P base.

At first, referring to Fig. 5 J, deposition first photoresist 518 carries out photoetching process to said first photoresist 518 on said the 3rd oxide-film 516; Form photoresist P window 520, said photoresist P window 520 is carried out ion inject, inject ion and can be the boron ion; The injection energy is 40～100KeV, and implantation dosage is 2E14～4E14/cm2, then; Referring to Fig. 5 K, remove said first photoresist 518, form the P base.

Wherein, said P base comprises a P base 522, the 2nd P base 524, the 3rd P base and the 4th P base 532.A said P base 522 is used for subsequent technique and makes the P/N+ backward diode; Said the 2nd P base 524 is used for subsequent technique and makes PNP triode and NPN triode; The number of said the 3rd P base has N; The value of N by high working voltage LED protection diode the height of operating voltage of a parallelly connected LED confirm that when the operating voltage of said this LED was high, it is big that the N value can become; When said this LED operating voltage was low, the N value can diminish.For example, the operating voltage of said this LED is 3V, at this moment; Be generally 1V by the PNP triode of subsequent technique system, the silicon controlled rectifier voltage that the NPN triode is formed, and the voltage of each P/N+ forward diode of follow-up technology system is about 0.7V, therefore; Need 3 P/N+ forward diode here, and each P/N+ forward diode needs 1 the 3rd P base to constitute, promptly the N value is 3; Be followed successively by the 3rd P base 526, the 3rd P base 528 and the 3rd P base 530 from left to right; Be respectively applied for subsequent technique and make a P/N+ forward diode, the 2nd P/N+ forward diode and the 3rd P/N+ forward diode from left to right successively, wherein, N also can be 1; Therefore, N is the positive integer more than or equal to 1; Said the 4th P base 532 is used for subsequent technique and makes the P/N epitaxial diode.

Preferably; The spacing that the said first isolation P+514_1 and said second of a said P base 522 and said the 2nd P base 524 and the formation first isolated area D1 isolates P+514_2 is respectively greater than 5um; Said Semiconductor substrate spacing among a said P base 522 and said the 2nd P base 524 and the first isolated area D1 is respectively 2～5um, and the spacing between a said P base 522 and said the 2nd P base 524 is greater than 3um.

S109: on said the 3rd oxide-film, post-depositional second photoresist is carried out photoetching process, form photoresist N+ window, said photoresist N+ window is mixed, remove said second photoresist, form the emitter region.

At first, referring to Fig. 5 L, deposition second photoresist 534 carries out photoetching process to said second photoresist 534 on said the 3rd oxide-film 516; Form photoresist N+ window 536, secondly,, adopt ion implantation technology that said photoresist N+ window is mixed referring to Fig. 5 M; Inject ion and can be arsenic ion, the injection energy is 100～150KeV, and implantation dosage is 2E15～6E15/cm2, and is last; Referring to Fig. 5 N, remove said second photoresist 534, form the emitter region.

Wherein, said emitter region comprises first emitter region 538, second emitter region 540, the 3rd emitter region and the 4th emitter region.Said first emitter region 538 is arranged in the right that said first isolated area D1 next-door neighbour said first isolates P+512_1; Said second emitter region begins to be arranged in said the 2nd P base 524 downwards from 524 surfaces, said the 2nd P base; The number of said the 3rd emitter region is with the number of variations of said the 3rd P base; Here; The number of said the 3rd emitter region is 3; Be followed successively by the 3rd emitter region 544, the 3rd emitter region 546 and the 3rd emitter region 548 from left to right; And said the 3rd emitter region 544, the 3rd echo area 546 and the 3rd emitter region 548 begin to be arranged in corresponding described the 3rd P base 526, the 3rd P base 528 and the 3rd P base 530 from left to right respectively successively downwards from the surface of described the 3rd P base 526, the 3rd P base 528 and the 3rd P base 530, if the number N of said the 3rd P base is 1, the number of then said the 3rd emitter region also is 1; The number of said the 4th emitter region is 2; Be arranged in said second isolated area D2 next-door neighbour said second isolate P+514_2 the right be the 4th emitter region 542, be arranged in said second isolated area D2 next-door neighbour the said the 3rd isolate P+514_3 the left side be the 4th emitter region 550.

S110: on said N type epitaxial loayer, adopt chemical vapor deposition method growth regulation four oxide-films.

Referring to Fig. 5 O, on said N type epitaxial loayer 508, adopting chemical vapor deposition (CVD) technology growth thickness is the 4th oxide-film 552 of 0.5～0.8um.

S111: adopt annealing process in said emitter region, form emitter region N+.

Referring to Fig. 5 P, carry out the ion of annealing process activate to inject in said emitter region, form emitter region N+, the temperature of said annealing process is that 950～1050 ℃, time are 10～60min.

Wherein, Said emitter region N+ comprises the first emitter region N+538 ', the second emitter region N+540 ', the 3rd emitter region N+ and the right the 4th emitter region N+, in the described first emitter region N+538, the second emitter region N+540, the 3rd emitter region N+ and the right the 4th emitter region N+, forms through activating the ion that injects respectively.Make the P/N+ backward diode through a said P base 522 with the said first emitter region N+538 '; Make the NPN triode through said N type epitaxial loayer 508, said the 2nd P base 524 and the said second emitter region N+540 '; And make the PNP triodes through said Semiconductor substrate 500, said N type epitaxial loayer 508 and said the 2nd P base 524; Number of variations with said the 3rd P base; The number of said the 3rd emitter region N+ is 3; Be followed successively by the 3rd emitter region N+544 ', the 3rd emitter region N+546 ' and the 3rd emitter region N+548 ' from left to right; Through said the 3rd emitter region N+544 ' and the 3rd P base 526, the 3rd emitter region N+546 ' and the 3rd P base 528, the 3rd emitter region N+548 ' and the 3rd P base 530, make a P/N+ forward diode, the 2nd P/N+ forward diode and the 3rd P/N+ forward diode from left to right successively, if the number of said the 3rd P base is 1; Then form number and be 1 said the 3rd emitter region, and constitute 1 P/N+ forward diode jointly; Said the right the 4th emitter region N+; Be arranged in said second isolated area D2 next-door neighbour the said the 3rd isolate P+514_3 the left side be the right the 4th emitter region N+550 ', through the P/N epitaxial diode of said the right the 4th emitter region N+550 ' with said the 4th P base 532 making.

Further, be arranged in the right that said second isolated area D2 next-door neighbour said second isolates P+514_2 and also be formed with the left side the 4th emitter region N+542 '.The said left side the 4th emitter region N+542 ' can prevent that the P/N+ forward diode from horizontal parasitic thyristor occurring respectively and between the said N type epitaxial loayer 508, said the 3rd P base 526, said the 3rd emitter region N+544 ' isolating P+514_2 such as said second, and horizontal parasitic thyristor triggering and conducting causes protecting the diode disabler.

Further, said emitter region N+ comprises the first emitter region N+538 ', the second emitter region N+540 ', the 3rd emitter region N+ and the 4th emitter region N+, and said the 4th emitter region N+ comprises the right the 4th emitter region N+ and the left side the 4th emitter region N+.

Preferably, the said first emitter region N+538 ' is 2～5um with a said P base 522 laps.

Preferably, the said left side the 4th emitter region N+542 ' and the contiguous said second isolation P+514_2 can be arranged side by side, also can be overlapping, and lap is 0～5um; Said the right the 4th emitter region N+550 ' and contiguous said the 3rd isolation P+514_3 can be arranged side by side, also can be overlapping, and lap is 0～5um.

S112: adopt photoetching process in said the 4th oxide-film, to etch the fairlead window.

Referring to Fig. 5 Q, said the 4th oxide-film 552 is carried out photoetching process, in said the 4th oxide-film 552, etch the fairlead window.

Wherein, When the number N of said the 3rd P base is greater than 1 the time; If N is 3 o'clock; At this moment, said fairlead window comprises fairlead window 554_1, fairlead window 554_2, fairlead window 554_3, fairlead window 554_4, fairlead window 554_5, fairlead window 554_6, fairlead window 554_7, fairlead window 554_8, fairlead window 554_9, fairlead window 554_10 and fairlead window 554_11.Said fairlead window 554_1 is positioned at a said P base 522; Said fairlead window 554_2 is positioned at the said second emitter region N+540 '; Said fairlead window 554_3 is positioned at said the 3rd P base 526; Said fairlead window 554_4 is positioned at said the 3rd emitter region N+544 '; Said fairlead window 554_5 is positioned at said the 3rd P base 528; Said fairlead window 554_6 is positioned at said the 3rd emitter region N+546 '; Said fairlead window 554_7 is positioned at said the 3rd P base 530; Said fairlead window 554_8 is positioned at said the 3rd emitter region N+548 '; Said fairlead window 554_9 is positioned at said the 4th P base 532; Said fairlead window 554_10 is positioned at said the right the 4th emitter region N+550 '; Said fairlead window 554_11 is arranged in the said the 3rd and isolates P+514_3; If N is 1 o'clock, said fairlead window comprises fairlead window 554_1, fairlead window 554_2, fairlead window 554_3, fairlead window 554_4, fairlead window 554_9, fairlead window 554_10 and fairlead window 554_11.Wherein, give unnecessary details at this no longer one by one the position the when zone that each fairlead window forms can be referring to N=3.

S113:, form electrode at the surface deposition metal of said the 4th oxide-film and said fairlead window.

Referring to surface sputtering or the evaporation technology of Fig. 5 R. at said the 4th oxide-film 552 and said fairlead window, forming thickness is the metal of 1.5～3um, then, the metal that forms is carried out photoetching, etching, alloy, forms electrode, and preferred, said metal is an aluminium.

Wherein, When the number N of said the 3rd P base is greater than 1 the time; If N is 3 o'clock, at this moment, said electrode comprises the first electrode LA1, the second electrode LA2, third electrode LA3, the 4th electrode LA4, the 5th electrode LA5, the 6th electrode LA6 and plane electrode LA (figure does not show).Form the said first electrode LA1 on part the 4th oxide-film 552 that in said fairlead window 554_1, is close to said fairlead window 554_1; The said the 2 the second electrode LA2 of formation in said fairlead window 554_2, said fairlead window 554_3 and on said fairlead window 554_2 next-door neighbour's left-hand component the 4th oxide-film 552, said fairlead window 554_3 next-door neighbour's right-hand component the 4th oxide-film 552 and the 4th oxide-film 552 between said fairlead window 554_2 and the said fairlead window 554_3; The said third electrode LA3 of formation in said fairlead window 554_4, said fairlead window 554_5 and on said fairlead window 554_4 next-door neighbour's left-hand component the 4th oxide-film 552, said fairlead window 554_5 next-door neighbour's right-hand component the 4th oxide-film 552 and the 4th oxide-film 552 between said fairlead window 554_4 and the said fairlead window 554_5; Said the 4th electrode LA4 of formation in said fairlead window 554_6, said fairlead window 554_7 and on said fairlead window 554_6 next-door neighbour's left-hand component the 4th oxide-film 552, said fairlead window 554_7 next-door neighbour's right-hand component the 4th oxide-film 552 and the 4th oxide-film 552 between said fairlead window 554_6 and the said fairlead window 554_7; Said the 5th electrode LA5 of formation in said fairlead window 554_8, said fairlead window 554_9 and on said fairlead window 554_8 next-door neighbour's left-hand component the 4th oxide-film 552, said fairlead window 554_9 next-door neighbour's right-hand component the 4th oxide-film 552 and the 4th oxide-film 552 between said fairlead window 554_8 and the said fairlead window 554_9; In said fairlead window 554_10, said fairlead window 554_11 and on said fairlead window 554_10 next-door neighbour's left-hand component the 4th oxide-film 552, form said the 6th electrode LA6; On said LA6 and said LA1, form said plane electrode LA; If N is 1 o'clock, at this moment, said electrode comprises the first electrode LA1, the second electrode LA2, the 5th electrode LA5, the 6th electrode LA6 and plane electrode LA (figure does not show).In said fairlead window 554_2, said fairlead window 554_3 and on said fairlead window 554_2 next-door neighbour's left-hand component the 4th oxide-film 552, said fairlead window 554_3 next-door neighbour's right-hand component the 4th oxide-film 552 and the 4th oxide-film 552 between said fairlead window 554_2 and the said fairlead window 554_3, be formed with the second electrode LA2, said the 5th electrode LA5 of formation in said fairlead window 554_4, said fairlead window 554_9 and on said fairlead window 554_4 next-door neighbour's left-hand component the 4th oxide-film 552, said fairlead window 554_9 next-door neighbour's right-hand component the 4th oxide-film 552 and the 4th oxide-film 552 between said fairlead window 554_4 and the said fairlead window 554_9.Connection when the formation of remaining electrode can be referring to N=3 is given unnecessary details at this no longer one by one.

S114: back metal is formed on the bottom in said Semiconductor substrate.

Referring to Fig. 5 S, metallized in the bottom of said Semiconductor substrate 500, form back metal 570, draw backplate (figure does not show) on the surface of said back metal.

Preferably; Referring to Fig. 5 T; The chip surface employing low temperature deposition thickness that forms in above-mentioned steps is the passivation layer 568 of 0.5～1.2um, so that chip is protected to avoid surface electrode to occur scratching, then; Said passivation layer 568 to deposit carries out photoetching, etching, when said the 5th electrode LA5 passivation, has pressure point window 572.

Preferably, said first oxide-film 502, said second oxide-film 510, said the 3rd oxide-film 516 and said the 4th oxide-film 552 all can be silica membrane.

Accordingly, the one-to-one relationship of the structure of a kind of high-voltage LED protection diode circuit of a kind of high working voltage LED protection diode of the present invention's proposition and the present invention's proposition is following:

Emitter, base stage and the collector electrode that said PNP triode 204 comprises corresponds respectively to said high-voltage LED and protects said Semiconductor substrate 500, said N type epitaxial loayer 508 and said the 2nd P base 524 in the said PNP triode in the structure of diode circuit;

Emitter, base stage and the collector electrode that said NPN triode 210 comprises corresponds respectively to said high-voltage LED and protects the said second echo area N+540 ', said the 2nd P base 524 and said N type epitaxial loayer 508 in the said NPN triode in the structure of diode circuit;

The positive pole of said P/N+ backward diode 208 and negative pole correspond respectively to said high-voltage LED and protect said first an emitter region N+538 ' and a said P base 522 in the said P/N+ backward diode in the structure of diode circuit;

The positive pole of said P/N epitaxial diode 206 and negative pole correspond respectively to said the 4th emitter region N+550 ' and the said N type epitaxial loayer 508 in the said P/N epitaxial diode in the structure of said high-voltage LED protection diode circuit, said the 4th P base 532;

Said P/N+ forward diode module 212 comprises N P/N+ forward diode; When N is greater than 1 the time; Like N=3; At this moment; Be respectively P/N+ forward diode 212, P/N+ forward diode 214 and P/N+ forward diode 216, the positive pole of said P/N+ forward diode 212 and negative pole correspond respectively to said the 3rd P base 530 and said the 3rd emitter region N+548 ' in said the 3rd P/N+ forward diode in the positive pole of said the 3rd P base 528 and said the 3rd emitter region N+546 ' in said the 2nd P/N+ forward diode in the positive pole of said the 3rd P base 526 and said the 3rd emitter region N+544 ', said P/N+ forward diode 214 in the said P/N+ forward diode in the structure of said high-voltage LED protection diode circuit and the structure that negative pole corresponds respectively to said high-voltage LED protection diode circuit, said P/N+ forward diode 216 and the structure that negative pole corresponds respectively to said high-voltage LED protection diode circuit; If during N=1, at this moment, the positive pole of P/N+ forward diode, negative pole correspond respectively to said high-voltage LED and protect said the 3rd P base 526 and said the 3rd emitter region N+544 ' in the said P/N+ forward diode in the structure of diode circuit.

The backplate (figure does not show) of drawing corresponding to the said back metal 570 the structure of said high-voltage LED protection diode circuit from the emitter extraction electrode 202 of said PNP triode 204; The metal aluminium electrode 200 of drawing from the positive pole of the negative pole of the positive pole of said P/N+ backward diode 208, said P/N+ forward diode 216 and said P/N epitaxial diode 206 is corresponding to the said plane electrode LA (figure does not show) the structure of said high-voltage LED protection diode circuit.

Therefore; The number N of the P/N+ forward diode that comprises when said P/N+ forward diode module is for greater than 1 the time; Like N is 3 o'clock; The emitter of said PNP triode 204 is connected through said Semiconductor substrate 500 and said the 3rd isolation P+514_3, said the 6th electrode LA6, said the 4th emitter region N+550 ' with the negative pole of P/N epitaxial diode 206; The negative pole of the base stage of said PNP triode 204 and P/N+ backward diode 208 is connected through said N type epitaxial loayer 508 with the collector electrode of NPN triode 210; The collector electrode of said PNP triode 204 is connected through said the 2nd P base 524 with the base stage of said NPN triode 210; The emitter of said NPN triode 210 is connected with said the 3rd P base 526 through the said second echo area N+540 ' with the positive pole of P/N+ forward diode 214; The negative pole of said P/N+ forward diode 214 is connected with said the 3rd P base 528 through said the 3rd emitter region N+544 ' with the positive pole of P/N+ forward diode 216; The negative pole of said P/N+ forward diode 216 is connected with said the 3rd P base 530 through said the 3rd emitter region N+546 ' with the positive pole of P/N+ forward diode 218; The positive pole of the anodal and said P/N+ backward diode 208 of the negative pole of said P/N+ forward diode 218 and said P/N epitaxial diode 206 is connected through said the 3rd emitter region N+548 ', said the 4th P base 532, a said P base 522; Therefore, the negative pole of the positive pole of said P/N+ forward diode 214 and said P/N+ forward diode 218 is respectively positive pole, the negative pole of said P/N+ forward diode module 212; If the P/N+ forward diode that said P/N+ forward diode module comprises is 1; Be that N is 1 o'clock; The emitter of said NPN triode 210 is connected with said the 3rd P base 526 through the said second echo area N+540 ' with the positive pole of P/N+ forward diode; The positive pole of the anodal and said P/N+ backward diode 208 of the negative pole of said P/N+ forward diode and said P/N epitaxial diode 206 is connected through said the 3rd emitter region N+548 ', said the 4th P base 532, a said P base 522; Therefore; The negative pole of the positive pole of said P/N+ forward diode and said P/N+ forward diode is respectively positive pole, the negative pole of said P/N+ forward diode module 212, and the connection of remaining connected mode during referring to this section N=3 given unnecessary details at this no longer one by one.

Accordingly, a kind of high working voltage LED protection diode and correspondent voltage current curve thereof that is parallel with LED of the present invention's proposition.Wherein, the said high working voltage LED that is parallel with LED protects in the voltage-current curve of diode, the abscissa representative voltage, and ordinate is represented electric current.

Referring to Fig. 6; After said high working voltage LED protection diode can encapsulate separately; Be connected in parallel on the both sides of LED device during use, metal aluminium electrode 200 links to each other with the LED negative pole, and electrode 202 links to each other with LED is anodal; High workload point of every LEDs parallel connection is pressed LED protection diode, also can directly encapsulate the inside that is connected in parallel on the LED device.When a certain LEDs in the circuit of more number LED series connection damages open circuit; The number N of the P/N+ forward diode that said P/N+ forward diode module 212 comprises is greater than 1 o'clock, during like N=3, referring to Fig. 2; Like operating voltage during greater than starting resistor; Operating voltage after said high working voltage LED protection diode starts is about about 3～3.3V, and referring to Fig. 7, puncturing appears in inner said P/N+ backward diode; The electric current that flows through said P/N+ backward diode increases the SCR structure that causes said NPN triode, said PNP triode to be formed and triggers startup; Electric current flows through from controllable silicon, flows through the P/N+ forward diode modules that 3 series connection form again successively, promptly said P/N+ forward diode 214, the P/N+ of institute forward diode 216 and said P/N+ forward diode 218; Thereby avoid the situation that a whole cluster of lamps, ornamental does not work occurring, also keep the pressure drop of constant-current drive circuit and other LED stable simultaneously; Because and when the LED electric voltage reverse-connection; Inner said P/N epitaxial diode conducting; And the about 0.7V of conducting voltage; Be lower than the voltage of single LEDs, thereby protection LED can not protect the voltage-current relationship curve chart of diode can clearly illustrate that its protective value from said high-voltage LED owing to reversal connection was lost efficacy; During like N=1, referring to Fig. 3, the description of its operation principle during referring to this section N=3 given unnecessary details at this no longer one by one.

Visible by technique scheme; Forming the high working voltage led circuit with a kind of more number LED series connection of traditional common compares; A kind of high working voltage LED protection diode disclosed by the invention is owing to the emitter of PNP triode is connected with the negative pole of P/NP/N epitaxial diode; The negative pole of the base stage of PNP triode and P/N+P/N+ backward diode is connected with the collector electrode of NPN triode; The collector electrode of PNP triode is connected with the base stage of NPN triode, and the emitter of NPN triode is connected with the positive pole of P/N+ forward diode module, and the negative pole of P/N+ forward diode module is connected with the positive pole anodal and said P/N+ backward diode of said P/N epitaxial diode.Because said P/N+ forward diode module comprises N P/N+ forward diode; When the operating voltage of a LED higher or on the low side; Can come the voltage of the said P/N+ forward diode module of adjustment synchronously through the number that correspondingly increases or reduce the P/N+ forward diode that is comprised, guarantee that the operating voltage of operating voltage and a said LED after LED protection diode starts is close.Simultaneously; In the manufacture process of high working voltage LED protection diode, also can carry out quantitative selected to the P/N+ forward diode; Then; Positive pole, the negative pole head and the tail of N P/N+ forward diode are connected into one group of continuous P/N+ forward diode successively, and the head and the tail of one group of continuous P/N+ forward diode are anodal, negative pole is respectively said P/N+ forward diode module positive pole, negative pole, can realize that then the voltage of high working voltage LED protection diode is adjustable.Therefore, the operating voltage after LED protection diode starts equals PNP triode, the silicon controlled rectifier voltage of NPN triode composition and the voltage of N P/N+ forward diode, and is close with the operating voltage of a common LED.When the some LED of appearance in the more number LED series circuit damage open circuit; P/N+ backward diode be (base-emitter) electrode direct and the PNP triode is composed in series start-up circuit; When the operating voltage of the LED of said damage during greater than the be forward voltage of P/N+ backward diode and PNP triode; Puncturing appears in the P/N+ backward diode, and the electric current that flows through the P/N+ backward diode increases, and this electric current all passes through from the be electrode of PNP triode; And can under very little electric current, start the SCR structure that NPN, PNP form rapidly, make said LED protection diode circuit get into operating state.

Though the present invention with preferred embodiment openly as above; But it is not to be used for limiting claim; Any those skilled in the art are not breaking away from the spirit and scope of the present invention; Can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.

Claims

1. a high working voltage LED protects diode, comprising:

2. high working voltage LED protection diode according to claim 1; It is characterized in that: draw metal aluminium electrode in the positive pole of the negative pole of said P/N+ forward diode module, said P/N epitaxial diode, the anodal junction of said P/N+ backward diode, at the emitter of said PNP triode and the negative pole place extraction electrode of said P/N epitaxial diode.

3. high working voltage LED protection diode according to claim 1, it is characterized in that: said P/N+ forward diode module comprises N P/N+ forward diode, and N is the positive integer more than or equal to 1.

4. high working voltage LED protection diode according to claim 3, it is characterized in that: said N is 1 o'clock, the positive pole of said P/N+ forward diode, negative pole are respectively positive pole, the negative pole of said P/N+ forward diode module.

5. high working voltage LED protection diode according to claim 3; It is characterized in that: said N is greater than 1 o'clock; The positive pole of said each P/N+ forward diode, negative pole head and the tail are connected into one group of continuous P/N+ forward diode successively, and the head and the tail of one group of continuous P/N+ forward diode are anodal, negative pole is respectively said P/N+ forward diode module positive pole, negative pole.

6. the structure of high working voltage LED protection diode comprises:

Be positioned at the back metal of said Semiconductor substrate bottom.

7. the structure of high working voltage LED protection diode according to claim 6; It is characterized in that: comprise that also forming a said P base, the said second emitter region N+, said the 4th P base, said the right the 4th emitter region N+ and said first respectively isolates the fairlead window that P+ and the said the 3rd isolates on the P+, form the 3rd emitter region N+ and the fairlead window on the 3rd P base in said each P/N+ forward diode.

8. the structure of high working voltage LED protection diode according to claim 7 is characterized in that: also comprise first electrode in the fairlead window that forms a said P base; Form the said the 3rd the 6th electrode of isolating between the fairlead window of fairlead window and said the right the 4th emitter region N+ of P+; Form on the plane plane electrode that said the 6th electrode is linked to each other with first electrode is arranged; Like said N is 1, forms second electrode between the fairlead window of fairlead window and said the 3rd P base of the said second emitter region N+; Form the 5th electrode between the fairlead window of fairlead window and said the 4th P base of said the 3rd emitter region N+; Like said N is greater than 1 o'clock, forms second electrode between the fairlead window of fairlead window and the 3rd P base in the said P/N+ forward diode of the said second emitter region N+; The electrode that forms between the fairlead window of the 3rd P base in each P/N+ forward diode thereafter and the fairlead window of the 3rd emitter region N+ in the previous P/N+ forward diode forms the 5th electrode between the fairlead window of fairlead window and said the 4th P base of the 3rd emitter region N+ in said N the P/N+ forward diode.

9. the structure of high working voltage LED protection diode according to claim 6 is characterized in that: also comprise the passivation layer that forms on the said body structure surface.

10. the structure of high working voltage LED according to claim 6 protection diode is characterized in that: form the left side the 4th emitter region N+ in the said N type epitaxial loayer of said second isolated area.

11. a high working voltage LED protection diode making process comprises the steps:

Said N+ buried regions window mixed form the N+ buried regions;

On said N type epitaxial loayer, form second oxide-film;

Said P+ diffusion window mixed to form isolate P+;

Adopt annealing process in said emitter region, form emitter region N+;

Back metal is formed on the bottom in said Semiconductor substrate.

12. high working voltage LED protection diode making process according to claim 11, it is characterized in that: said P base comprises a P base, the 2nd P base, the 3rd P base and the 4th P base at least.

13. high working voltage LED protection diode making process according to claim 11 is characterized in that: said isolation P+ comprises that at least first isolates P+, the second isolation P+ and the 3rd isolation P+.

14. high working voltage LED protection diode making process according to claim 11, it is characterized in that: said emitter region N+ comprises the first emitter region N+, the second emitter region N+, the 3rd emitter region N+ and the right the 4th emitter region N+ at least.

15. high working voltage LED protection diode making process according to claim 11; It is characterized in that: said isolation P+ comprises that at least first isolates P+, the second isolation P+ and the 3rd isolation P+, and said emitter region N+ comprises the first emitter region N+, the second emitter region N+, the 3rd emitter region N+ and the right the 4th emitter region N+ at least.

16. high working voltage LED protection diode making process according to claim 15 is characterized in that: said the right the 4th emitter region N+ and the 3rd contiguous isolation P+ are side by side, or overlapping, and lap is 0～5um.

17. high working voltage LED protection diode making process according to claim 11, it is characterized in that: said the 3rd P base is N, and N is the positive integer more than or equal to 1.

18. high working voltage LED protection diode making process according to claim 17; It is characterized in that: said N is 1 o'clock; In said the 3rd P base, inject to form the 3rd emitter region N+, and by said the 3rd P base and be arranged in said the 3rd emitter region N+ that said the 3rd P base forms and constitute the P/N+ forward diode.

19. high working voltage LED protection diode making process according to claim 17; It is characterized in that: said N is greater than 1 o'clock; In said each the 3rd P base, inject to form the 3rd emitter region N+, and by said each the 3rd P base and be arranged in the 3rd emitter region N+ that said each the 3rd P base forms and constitute N P/N+ forward diode.

20. high working voltage LED according to claim 11 protection diode making process is characterized in that: at said isolation P+, said the 4th oxide-film be formed with passivation layer above the said electrode.