CN107579160A - Organic EL display panel and display device - Google Patents
Organic EL display panel and display device Download PDFInfo
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Abstract
The present invention relates to display technology field, discloses a kind of organic EL display panel, and the organic EL display panel includes cathode layer, anode layer, and between the cathode layer and the anode layer and at least two luminescence units that are serially connected；Wherein, charge generating layers are provided between at least one pair of adjacent luminescence unit, the charge generating layers include the P doped layers close to the cathode layer side, the N doped layers close to the anode layer side, and the intermediate layer between the P doped layers and the N doped layers；The electron mobility in the intermediate layer is more than the electron mobility of the N doped layers material of main part, and/or, the hole mobility in the intermediate layer is more than the hole mobility of the P doped layers material of main part.Organic EL display panel provided in an embodiment of the present invention has driving voltage steady in a long-term and relatively low power consumption, and service life is longer, and luminous efficiency is higher.
Description
Technical Field
The present invention relates to the field of display technologies, and in particular, to an organic electroluminescent display panel and a display device.
Background
The conventional white organic electroluminescent display (OLED) device mainly forms white light by adjusting the ratio of the emission brightness based on red-green-blue (R-G-B) or blue-yellow (B-Y) dual-color light-emitting units. At present, the white OLED generally adopts a tandem stacked structure, for example, a red light emitting unit, a green light emitting unit and a blue light emitting unit are connected in series; in order to improve the efficiency of the OLED device, a Charge Generation Layer (CGL) is generally added between different light emitting layers.
Generally, the CGL layer includes an N-doped layer (N-doping CGL) and a P-doped layer (P-doping CGL) in direct contact, i.e., a P-N type CGL, but since the N-doping CGL and the P-doping CGL are diffused with each other with the increase of time, the voltage of the OLED device increases with the increase of application time, and thus, the voltage stability of the conventional OLED device is poor and the power consumption is large.
Disclosure of Invention
The invention discloses an organic electroluminescent display panel and a display device, which are used for solving the problem that the voltage of the organic electroluminescent display device in the prior art is increased along with the prolonging of the application time.
In order to achieve the purpose, the invention provides the following technical scheme:
an organic electroluminescent display panel comprises a cathode layer, an anode layer, and at least two light-emitting units arranged between the cathode layer and the anode layer and connected in series;
a charge generation layer is arranged between at least one pair of adjacent light emitting units, and the charge generation layer comprises a P doping layer close to one side of the cathode layer, an N doping layer close to one side of the anode layer, and an intermediate layer positioned between the P doping layer and the N doping layer;
the electron mobility of the intermediate layer is greater than the electron mobility of the main material of the N-doped layer, and/or the hole mobility of the intermediate layer is greater than the hole mobility of the main material of the P-doped layer.
The working principle of the Charge Generation Layer (CGL) is: when an electric field is applied, the electron hole dipoles on the p-n junction are divided into holes and electrons due to the fact that the built-in electric field is weaker than the applied electric field, and the holes and the electrons are respectively injected into the OLED light emitting unit layers through the channels under the action of the Zener effect.
In the above OLED panel, the light emitting cells are stacked in series, and a Charge Generation Layer (CGL) may be included between adjacent light emitting cells, so that holes and electrons injected into the layer of the OLED light emitting cell may be increased, and the electroluminescence efficiency of the OLED device may be improved.
The Charge Generation Layer (CGL) in the OLED panel comprises a P-doped layer, an N-doped layer and an intermediate layer (I layer) positioned between the P-doped layer and the N-doped layer, namely the OLED panel is a P-I-N type CGL OLED panel; in the P-I-N type CGLOLED panel, due to the existence of the intermediate layer (I layer), mutual diffusion between the P doping layer and the N doping layer can be effectively avoided, so that the long-term stability and effectiveness of the P doping layer and the N doping layer can be ensured, and further, the drive voltage of the OLED panel can be ensured not to be increased along with the continuation of the application time, therefore, the OLED panel can have long-term stable drive voltage and lower power consumption, and the service life is longer.
Further, in the Charge Generation Layer (CGL) of the P-I-N type CGL OLED panel, since the electron mobility of the intermediate layer (I layer) is greater than the electron mobility of the N-doped layer host material or the hole mobility of the intermediate layer (I layer) is greater than the hole mobility of the P-doped layer host material, according to the zener effect, electron-hole dipoles at the P-N junction in the Charge Generation Layer (CGL) can be efficiently injected into the OLED light emitting cell layer through the channels, and thus, the light emitting efficiency of the OLED device can be effectively improved.
In summary, the P-I-N CGL OLED panel provided by the embodiments of the present invention has a long-term stable driving voltage, low power consumption, a long service life, and high light emitting efficiency.
Optionally, the thickness of the middle layer is 5-100 angstroms.
Optionally, the intermediate layer has an electron mobility of 10-6～10-3cm2Vs; alternatively, the hole mobility of the intermediate layer is 10-5～10-2cm2/Vs。
Optionally, the doping concentration of the P doping layer is 3% to 35%; the doping concentration of the N doping layer is 3% -45%.
Optionally, the intermediate layer is an organic material.
Optionally, the organic electroluminescent display panel includes a first light emitting unit, a second light emitting unit, and a third light emitting unit connected in series in sequence, and the first light emitting unit, the second light emitting unit, and the third light emitting unit may form white light through a luminance ratio;
a first charge generation layer is disposed between the first light emitting unit and the second light emitting unit, and a second charge generation layer is disposed between the second light emitting unit and the third light emitting unit.
Optionally, in the first charge generation layer, the electron mobility of the intermediate layer is greater than the electron mobility of the N-doped layer host material; in the second charge generation layer, the hole mobility of the intermediate layer is greater than the hole mobility of the P-doped layer host material; or,
in the first charge generation layer, the hole mobility of the intermediate layer is greater than the hole mobility of the P-doped layer host material; in the second charge generation layer, the electron mobility of the intermediate layer is greater than the electron mobility of the N-doped layer host material.
Optionally, in the first charge generation layer, the electron mobility of the intermediate layer is greater than the electron mobility of the N-doped layer host material; in the second charge generation layer, the electron mobility of the intermediate layer is greater than that of the main material of the N-doped layer; or,
in the first charge generation layer, the hole mobility of the intermediate layer is greater than the hole mobility of the P-doped layer host material; in the second charge generation layer, the hole mobility of the intermediate layer is greater than the hole mobility of the P-doped layer host material.
Optionally, the organic electroluminescent display panel comprises a blue light emitting unit and a yellow light emitting unit connected in series with each other; the charge generation layer is provided between the blue light emitting unit and the yellow light emitting unit.
Optionally, the organic electroluminescent display panel further comprises an electron transport layer between the at least two light emitting cells and the cathode layer, and a hole transport layer between the at least two light emitting cells and the anode layer; the electron transport layer is formed by co-doping an organic material and a rare earth element; the hole transport layer is composed of two organic materials.
Optionally, the material of the light emitting layer of the at least two light emitting units comprises a fluorescent material and/or a phosphorescent material.
Optionally, the organic electroluminescent display panel is a top emission structure; or, the organic electroluminescent display panel is of a bottom light emitting structure.
A display device comprising the organic electroluminescent display panel described in any one of the above technical aspects.
Drawings
FIG. 1 is a schematic diagram of an organic electroluminescent display panel according to the prior art;
FIG. 2 is a schematic diagram of another prior art organic electroluminescent display panel;
fig. 3 is a schematic structural diagram of an organic electroluminescent display panel according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of an organic electroluminescent display panel according to another embodiment of the present invention;
fig. 5 is a schematic structural diagram of a P-I-N CGL OLED panel according to an embodiment of the present invention;
FIG. 6 is a schematic structural diagram of a P-N type CGL OLED panel in the same arrangement as the OLED panel structural layer in FIG. 5;
FIG. 7 is a schematic structural diagram of a P-oxide/metal layer-N type CGL OLED panel configured in the same manner as the OLED panel structure layer shown in FIG. 5;
fig. 8 is a graph showing the variation of the driving voltage with time for the three OLED panels shown in fig. 5 to 7.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Fig. 1 is a schematic structural diagram of a P-N type CGL organic electroluminescent display panel (OLED panel) in the prior art, and as shown in fig. 1, in three light emitting units 1 of the OLED panel, a Charge Generation Layer (CGL)2 is disposed between every two adjacent light emitting units 1, and a CGL2 of the OLED panel only includes a P-doped layer (P-doping CGL)3 and an N-doped layer (N-doping CGL)4, since the P-doping CGL3 and the N-doping CGL4 diffuse each other and the diffusion effect becomes larger and larger with the passage of time, and further, the driving voltage of the OLED device increases gradually with the increase of the application time, the power consumption of the P-N type CGL OLED panel is larger and the service life is shorter.
As shown in FIG. 2, the prior solution is to add an oxide layer or metal layer 5 between the P-doting CGL3 and the N-doting CGL4, i.e. to form a P-oxide/metal layer-N type CGL 200; however, the P-oxide/metal layer-N type CGL200 may cause an increase in optical loss of the OLED panel due to the large extinction coefficients of the oxide and the metal, and the light emitting efficiency of the P-oxide/metal layer-N type CGL OLED panel may be low.
Based on the above findings, the invention discloses an organic electroluminescent display panel and a display device, which are used for solving the problems that the voltage of the conventional P-N type CGL OLED panel is increased along with the prolonging of the application time and the luminous efficiency of the conventional P-oxide/metal layer-N type CGL OLED panel is low.
Please refer to fig. 3 to 8.
As shown in fig. 3 and 4, an organic electroluminescent display panel (OLED panel) according to an embodiment of the present invention includes a cathode layer 6, an anode layer 7, and at least two light emitting cells 10 located between the cathode layer 6 and the anode layer 7 and connected in series with each other; wherein:
a Charge Generation Layer (CGL)20 is disposed between at least one pair of adjacent light emitting cells 10, the Charge Generation Layer (CGL)20 including a P-doped layer 30 adjacent to the cathode layer 6, an N-doped layer 40 adjacent to the anode layer 7, and an intermediate layer (I-layer) 50 between the P-doped layer 30 and the N-doped layer 40, the Charge Generation Layer (CGL)20 hereinafter being abbreviated as a P-I-N type CGL; in the Charge Generation Layer (CGL)20, the electron mobility of the intermediate layer (I layer) 50 is greater than the electron mobility of the host material of the N-doped layer 40, and/or the hole mobility of the intermediate layer (I layer) 50 is greater than the hole mobility of the host material of the P-doped layer 30.
The working principle of the Charge Generation Layer (CGL) is: when an electric field is applied, the electron hole dipoles on the p-n junction are divided into holes and electrons due to the fact that the built-in electric field is weaker than the applied electric field, and the holes and the electrons are respectively injected into the OLED light emitting unit layers through the channels under the action of the Zener effect.
In the above-mentioned OLED panel, the light emitting cells 10 are stacked in series, and a Charge Generation Layer (CGL)20 may be included between adjacent light emitting cells, so that holes and electrons injected into the layers of the OLED light emitting cells 10 may be increased, and thus, the electroluminescent efficiency of the OLED device may be improved.
And, the Charge Generation Layer (CGL)20 in the OLED panel includes a P-doped layer 30, an N-doped layer 40, and an intermediate layer (I-layer) 50 between the P-doped layer 30 and the N-doped layer 40, i.e., the OLED panel is a P-I-N type CGL OLED panel; in the P-I-N CGL OLED panel, due to the existence of the intermediate layer (I layer) 50, mutual diffusion between the P doped layer 30 and the N doped layer 40 can be effectively avoided, so that long-term stability and effectiveness of the P doped layer 30 and the N doped layer 40 can be ensured, and further, it can be ensured that the driving voltage of the OLED panel does not become large along with the continuation of the application time, and therefore, the OLED panel can have long-term stable driving voltage and lower power consumption, and has a long service life.
Further, in the Charge Generation Layer (CGL)20 of the above-mentioned P-I-N type CGL OLED panel, since the electron mobility of the intermediate layer (I layer) 50 is greater than the electron mobility of the host material of the N-doped layer 40 and/or the hole mobility of the intermediate layer (I layer) 50 is greater than the hole mobility of the host material of the P-doped layer 30, according to the zener effect, electron-hole dipoles at the P-N junction in the Charge Generation Layer (CGL)20 can be efficiently injected into the OLED light emitting cell 10 layer through the channel, and thus, the light emitting efficiency of the OLED device can be effectively improved.
In summary, the P-I-N CGL OLED panel provided by the embodiments of the present invention has a long-term stable driving voltage, low power consumption, a long service life, and high light emitting efficiency.
In a specific embodiment, as shown in fig. 3 and 4, in the P-I-N CGL OLED panel provided by the embodiment of the present invention, the thickness of the intermediate layer (I layer) 50 of each Charge Generation Layer (CGL)20 is 5 to 100 angstroms.
Further, in each Charge Generation Layer (CGL)20, the doping concentration of the P-doped layer 30 may be 3% to 35%; the doping concentration of the N-doped layer 40 may be 3% to 45%.
The above-mentioned control of the thickness setting of the intermediate layer 50 and the doping concentrations of the P-doting CGL 30 and the N-doting CGL 40 may enable the electrons and holes in the Charge Generation Layer (CGL)20 to be better separated and finally injected into the OLED light emitting unit 10 layer, and thus may further improve the light emitting efficiency of the OLED device.
As shown in fig. 3 and 4, in a specific embodiment based on the above embodiments, in each Charge Generation Layer (CGL)20 in the P-I-N CGL OLED panel provided by the embodiments of the present invention, the electron mobility of the material of the intermediate layer (I layer) 50 may be 10-6～10-3cm2Vs; in another specific embodiment, the hole mobility of the material of the intermediate layer (I-layer) 50 in each Charge Generation Layer (CGL)20 may be specifically 10-5～10-2cm2/Vs。
The above-described setting of the electron mobility or the hole mobility of the material of the intermediate layer (I layer) 50 allows electrons and holes at the P-N junction in the Charge Generation Layer (CGL)20 to be efficiently injected into the OLED light emitting cell 10 layer, and thus, the P-I-N type CGL OLED panel can have high light emitting efficiency.
As shown in fig. 3 and 4, in a specific embodiment based on the above embodiments, an organic material may be used for the intermediate layer (I layer) 50 of each Charge Generation Layer (CGL)20 in the P-I-N type CGL OLED panel provided by the embodiment of the present invention.
Compared with an oxide or a metal layer, the organic material has a small extinction coefficient and relatively small optical loss to an OLED device, and the intermediate layer (I layer) 50 is small in thickness and thin in layer structure, so that the P-I-N type CGL provided by the embodiment of the invention has relatively small influence on the luminous efficiency of an OLED panel; therefore, compared with an N-oxide/metal layer-P CGL type organic electroluminescent display device, the P-I-N type CGL OLED panel provided by the embodiment of the invention has the advantage that the luminous efficiency can be remarkably improved.
The specific structure of the P-I-N type OLED provided by the embodiment of the present invention is illustrated below.
In a first embodiment, as shown in fig. 3, a P-I-N type OLED provided in an embodiment of the present invention may include a first light emitting unit 11, a second light emitting unit 12, and a third light emitting unit 13 connected in series in sequence, where the first light emitting unit 11, the second light emitting unit 12, and the third light emitting unit 13 may form white light through a luminance ratio; alternatively, the first light emitting unit 11, the second light emitting unit 12, and the third light emitting unit 13 may be a green light emitting unit, a red light emitting unit, and a blue light emitting unit, respectively; specifically, a first charge generation layer (P-I-N type CGL)21 is disposed between the first light emitting cell 11 and the second light emitting cell 12, and a second charge generation layer (P-I-N type CGL)22 is disposed between the second light emitting cell 12 and the third light emitting cell 13.
Further, in the P-I-N CGL OLED panel provided in the first embodiment of the present invention, the first charge generation layer and the second charge generation layer may adopt the following four implementation modes:
in the first charge generation layer 21, the electron mobility of the intermediate layer (I layer) 51 is larger than that of the N-doped layer host material; in the second charge generation layer 22, the hole mobility of the intermediate layer (I layer) 52 is larger than that of the P-doped layer host material.
In the second mode, in the first charge generation layer 21, the hole mobility of the intermediate layer (I layer) 51 is larger than that of the P-doped layer host material; in the second charge generation layer 22, the electron mobility of the intermediate layer (I layer) 52 is larger than that of the N-doped layer host material.
In the first charge generation layer 21, the electron mobility of the intermediate layer (I layer) 51 is larger than that of the N-doped layer host material; in the second charge generation layer 22, the electron mobility of the intermediate layer (I layer) 52 is larger than that of the N-doped layer host material.
In the fourth mode, in the first charge generation layer 21, the hole mobility of the intermediate layer (I layer) 51 is larger than that of the P-doped layer host material; in the second charge generation layer 22, the hole mobility of the intermediate layer (I layer) 52 is larger than that of the P-doped layer host material.
In a second embodiment, as shown in fig. 4, the P-I-N CGL OLED panel provided in the embodiment of the present invention may include two light emitting units 10 connected in series, that is, a light emitting unit 14 and a light emitting unit 15, where the light emitting unit 14 and the light emitting unit 15 may form white light through a luminance ratio; alternatively, the light emitting units 14 and 15 may be a yellow light emitting unit and a blue light emitting unit, respectively; specifically, a charge generation layer (P-I-N type CGL)23 is provided between the light emitting cells 14 and 15, and in the charge generation layer (P-I-N type CGL)23, the electron mobility of the intermediate layer (I layer) 53 is greater than that of the host material of the N-doped layer 40; and/or the hole mobility of the intermediate layer (I-layer) 53 is greater than the hole mobility of the P-doped layer 30 host material.
Third embodiment, on the basis of the first embodiment or the second embodiment, the P-I-N CGLOLED panel provided by the embodiment of the present invention may further include an electron transport layer (ETL layer) between the cathode layer 6 and the light emitting unit 10 adjacent to the cathode layer 6, for example, the electron transport layer (ETL layer) 81 in fig. 3, and the electron transport layer (ETL layer) 83 in fig. 4; preferably, the electron transport layer (ETL layer) may be formed by co-doping an organic material with a rare earth element.
Further, the P-I-N CGL OLED panel provided by the embodiment of the present invention may further include a hole transport layer (HTL layer) between the anode layer 7 and the light emitting unit 10 adjacent to the anode layer 7, for example, the hole transport layer (HTL layer) 93 in fig. 3, and the hole transport layer (HTL layer) 95 in fig. 4; preferably, the hole transport layer (HTL layer) may be composed of two organic materials.
Alternatively, in addition to the light emitting cells 10 adjacent to the cathode layer 6, the other light emitting cell 10 layers may be provided with an electron transport layer (ETL layer) on the side facing the cathode layer 6, and the electron transport layer (ETL layer) may also be formed by co-doping an organic material and a rare earth element, for example, the electron transport layer (ETL layer) 82 in fig. 3, and the electron transport layer (ETL layer) 84 in fig. 4.
Further, in addition to the light-emitting units 10 adjacent to the anode layer 7, the other light-emitting unit 10 layers may also be provided with a hole transport layer (HTL layer) on the side facing the anode layer 7, and the hole transport layer (HTL layer) may also be composed of two organic materials, for example, a hole transport layer (HTL layer) 91 and a hole transport layer (HTL layer) 92 in fig. 3, and a hole transport layer (HTL layer) 94 in fig. 4.
Certainly, the P-I-N CGL OLED panel provided in the embodiment of the present invention may further include a hole injection layer (HIL layer) and an electron injection layer (EIL layer), which are not described herein again.
In a fourth embodiment, on the basis of the first, second or third embodiment, as shown in fig. 3 and 4, in the P-I-N CGL OLED panel provided in the embodiment of the present invention, the light emitting layer of the light emitting unit 10 may include a fluorescent material and/or a phosphorescent material; specifically, the light emitting unit 10 of the P-I-N CGL OLED panel provided in the embodiment of the present invention may be formed by combining a fluorescent material and a fluorescent material, or a fluorescent material and a phosphorescent material, or a phosphorescent material and a phosphorescent material; for example, the P-I-N CGL OLED panel provided by the embodiment of the present invention includes two light emitting units 10, i.e., a blue light emitting unit and a yellow light emitting unit, wherein a light emitting layer of the blue light emitting unit may adopt a fluorescent material, and a light emitting layer of the yellow light emitting unit may adopt a phosphorescent material, i.e., the light emitting unit 10 of the OLED is a combination of the fluorescent material and the phosphorescent material.
Further, in the P-I-N CGL OLED panel provided in the embodiment of the present invention, the light emitting layer of the light emitting unit 10 may adopt a mode of doping a guest material in a host material; for example, the P-I-N type OLED panel provided by the embodiment of the present invention includes three light emitting units 10, i.e., a red light emitting unit, a green light emitting unit, and a blue light emitting unit; the light-emitting layers of the three light-emitting units 10 all have a host material, and the host material is doped with a guest material, and the host material may include one, two or more materials.
On the basis of the above-described embodiments,
in a specific embodiment, the P-I-N CGL OLED panel provided in the embodiment of the present invention may be a top emission structure; the OLED structure adopting top emission can have relatively high aperture ratio and luminous efficiency.
In another specific embodiment, the P-I-N CGL OLED panel provided in the embodiment of the present invention may be a bottom emission structure; by adopting the bottom-emitting OLED structure, the microcavity effect of the OLED device can be reduced, and the preparation process is simple.
Next, taking a bottom-emitting device as an example, the driving voltage and the light emitting efficiency of the P-I-N CGL OLED panel provided in the embodiment of the present invention are compared with those of a P-N CGL OLED panel and a P-oxide/metal layer-N CGL OLED panel in the prior art.
Specifically, the structural layers of the above three types of OLED panels are, from bottom to top, anode (ITO layer) 7/Hole Injection Layer (HIL) 900/Hole Transport Layer (HTL) 90/Blue light emitting unit (Blue EML) 15/Charge Generation Layer (CGL)/Yellow light emitting unit (Yellow EML) 14/Electron Transport Layer (ETL) 80/Cathode (Cathode)6 in this order as an example; as shown in fig. 5 to 7, the Charge Generation Layers (CGLs) of the three OLED panels respectively employ P-I-N type CGL20, P-N type CGL2, and P-oxide/metal layer-N type CGL 200; through simulation analysis, the initial driving voltages of the three OLED panels, the change relation of the driving voltages along with time and the light emitting efficiency are finally obtained; specifically, the initial driving voltages and the light extraction efficiencies of the three OLED panels are shown in table 1 below, and the variation curves of the driving voltages of the three OLED panels with time are shown in fig. 8, wherein a represents a P-I-N type CGL OLED panel; b represents a P-N type CGL OLED panel; c represents a P-oxide/metal layer-N type CGL OLED panel.
TABLE 1 initial drive Voltage and light extraction efficiency of three OLED panels
| GGL layer structure | Initial driving voltage (V) | Luminous efficiency (EQE) |
| A: P-I-N type CGL | 8.2 | 10.2 |
| B: P-N type CGL | 8.0 | 9.8 |
| C: P-oxide/Metal layer-N type CGL | 8.1 | 9.5 |
As can be seen from table 1, the initial driving voltages of the three OLED panels are substantially equivalent, however, the P-I-N CGL OLED panel provided by the embodiment of the present invention has higher light emitting efficiency compared to the P-N CGLOLED panel and the P-oxide/metal layer-N CGL OLED panel.
As shown in fig. 8, as can be seen from fig. 8, compared with the P-N type CGL OLED panel in the prior art, the driving voltage of the P-I-N type CGL OLED panel provided in the embodiment of the present invention does not increase with the lapse of the operating time, that is, the driving voltage of the P-I-N type CGL OLED panel provided in the embodiment of the present invention is relatively stable, and the power consumption is relatively low; compared with the P-oxide/metal layer-N type CGL OLED panel in the prior art, the driving voltage of the P-I-N CGL type OLED panel provided by the embodiment of the invention is basically equivalent to the driving voltage of the P-I-N CGL type OLED panel.
From the above results, compared with the OLED panel in the prior art, the P-I-N CGL OLED panel provided by the embodiment of the present invention has stable operating voltage, low power consumption, and high light emitting efficiency.
In addition, the embodiment of the invention also provides an organic electroluminescent display device which comprises the P-I-N type CGL OLED panel in any one of the embodiments.
The organic electroluminescent display device provided by the embodiment of the invention has the advantages of more stable working voltage, less power consumption and higher luminous efficiency.
It will be apparent to those skilled in the art that various changes and modifications may be made in the embodiments of the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (13)
1. An organic electroluminescent display panel, comprising a cathode layer, an anode layer, and at least two light emitting units arranged between the cathode layer and the anode layer and connected in series;
a charge generation layer is arranged between at least one pair of adjacent light emitting units, and the charge generation layer comprises a P doping layer close to one side of the cathode layer, an N doping layer close to one side of the anode layer, and an intermediate layer positioned between the P doping layer and the N doping layer;
the electron mobility of the intermediate layer is greater than the electron mobility of the main material of the N-doped layer, and/or the hole mobility of the intermediate layer is greater than the hole mobility of the main material of the P-doped layer.
2. The organic electroluminescent display panel according to claim 1, wherein the thickness of the intermediate layer is 5 to 100 angstroms.
3. The organic electroluminescent display panel according to claim 1, wherein the electron mobility of the intermediate layer is 10-6～10-3cm2Vs; alternatively, the hole mobility of the intermediate layer is 10-5～10-2cm2/Vs。
4. The panel according to claim 1, wherein the doping concentration of the P-doped layer is 3% to 35%; the doping concentration of the N doping layer is 3% -45%.
5. The organic electroluminescent display panel according to claim 1, wherein the intermediate layer is an organic material.
6. The organic electroluminescent display panel according to claim 1, comprising a first light emitting unit, a second light emitting unit and a third light emitting unit connected in series in sequence, wherein the first light emitting unit, the second light emitting unit and the third light emitting unit can form white light by luminance matching;
a first charge generation layer is disposed between the first light emitting unit and the second light emitting unit, and a second charge generation layer is disposed between the second light emitting unit and the third light emitting unit.
7. The organic electroluminescent display panel according to claim 6,
in the first charge generation layer, the electron mobility of the intermediate layer is greater than that of the main material of the N-doped layer; in the second charge generation layer, the hole mobility of the intermediate layer is greater than the hole mobility of the P-doped layer host material; or,
in the first charge generation layer, the hole mobility of the intermediate layer is greater than the hole mobility of the P-doped layer host material; in the second charge generation layer, the electron mobility of the intermediate layer is greater than the electron mobility of the N-doped layer host material.
8. The organic electroluminescent display panel according to claim 6,
in the first charge generation layer, the electron mobility of the intermediate layer is greater than that of the main material of the N-doped layer; in the second charge generation layer, the electron mobility of the intermediate layer is greater than that of the main material of the N-doped layer; or,
in the first charge generation layer, the hole mobility of the intermediate layer is greater than the hole mobility of the P-doped layer host material; in the second charge generation layer, the hole mobility of the intermediate layer is greater than the hole mobility of the P-doped layer host material.
9. The organic electroluminescent display panel according to claim 1, comprising a blue light emitting unit and a yellow light emitting unit connected in series with each other; the charge generation layer is provided between the blue light emitting unit and the yellow light emitting unit.
10. The organic electroluminescent display panel according to any one of claims 1 to 9, further comprising an electron transport layer between the at least two light emitting units and the cathode layer, and a hole transport layer between the at least two light emitting units and the anode layer; the electron transport layer is formed by co-doping an organic material and a rare earth element; the hole transport layer is composed of two organic materials.
11. The organic electroluminescent display panel according to any one of claims 1 to 9, wherein the material of the light emitting layer of the at least two light emitting units comprises a fluorescent material and/or a phosphorescent material.
12. The organic electroluminescent display panel according to any one of claims 1 to 9, wherein the organic electroluminescent display panel is a top emission structure; or, the organic electroluminescent display panel is of a bottom light emitting structure.
13. A display device comprising the organic electroluminescent display panel according to any one of claims 1 to 12.
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