CN102427043A - Method for improving carrier mobility of PMOS (P-channel Metal Oxide Semiconductor) device - Google Patents
Method for improving carrier mobility of PMOS (P-channel Metal Oxide Semiconductor) device Download PDFInfo
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- CN102427043A CN102427043A CN2011102221503A CN201110222150A CN102427043A CN 102427043 A CN102427043 A CN 102427043A CN 2011102221503 A CN2011102221503 A CN 2011102221503A CN 201110222150 A CN201110222150 A CN 201110222150A CN 102427043 A CN102427043 A CN 102427043A
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Abstract
The invention relates to the field of semiconductor manufacturing, in particular to a method for improving carrier mobility of a PMOS (P-channel Metal Oxide Semiconductor) device. The method for improving the carrier mobility of the PMOS device, disclosed by the invention, comprises the following steps of: controlling the thickness of an oxide layer by optimizing oxidation time of silica oxide according to an electrical thickness target of a finally required gate oxide in a process of preparing the gate oxide; and regulating the time or power of a decoupling plasma nitriding process, and precisely optimizing the time of a fast nitriding annealing process so that nitrogen in a substrate oxide layer keeps off from a contact surface of the nitrogen and a silicon substrate, thereby improving the mobility of holes and further improving performances of PMOS transistors.
Description
Technical field
The present invention relates to field of semiconductor manufacture, relate in particular to a kind of method of the PMOS of improvement device carrier mobility.
Background technology
In field of semiconductor manufacture, improve mos field effect transistor (Metal-Oxide-Semiconductor Field Effect Transistor is called for short MOSFET) carrier mobility is topical subject always; Now; Industry usually in processing procedure through introducing stress engineering or adopting method such as different semi-conducting material raceway grooves to improve N slot field-effect transistor (Negative Channel Metal-Oxide-Semiconductor; Abbreviation PMOS) mobility of charge carrier (electronics), but these methods have improved the complexity of processing procedure greatly.
Summary of the invention
The invention discloses a kind of method of the PMOS of improvement device carrier mobility, wherein, may further comprise the steps:
Step S1: behind growth substrate oxide skin(coating) on the silicon substrate, adopt decoupled plasma nitridation technology, this substrate oxide skin(coating) of nitrogenize;
Step S2: plasma damage and nitrogen foam profile control technology when adopting quick nitrogenize annealing process to repair decoupled plasma nitridation technology, deposit polysilicon gate;
Wherein, on the contact-making surface of the nitrogen in the oxide skin(coating) after the reparation away from itself and silicon substrate.
The above-mentioned method of improving PMOS device carrier mobility wherein, adopts Fast Heating oxidation technology or original position aqueous vapor to generate technology, growth substrate oxide skin(coating) on silicon substrate.
The above-mentioned method of improving PMOS device carrier mobility, wherein, the thickness of substrate oxide skin(coating) is 10-15A.
The above-mentioned method of improving PMOS device carrier mobility, wherein, the dosage of the nitrogen of nitrogenize substrate oxide skin(coating) is 2E15atom/cm
2-5E15atom/cm
2
The above-mentioned method of improving PMOS device carrier mobility, wherein, the soft plasma of decoupled plasma nitridation process using carries out nitriding process.
The above-mentioned method of improving PMOS device carrier mobility, wherein, the temperature of nitrogenize annealing process is 1000-1100 ℃ fast.
The above-mentioned method of improving PMOS device carrier mobility, wherein, the annealing time of nitrogenize annealing process is 10-50 second fast.
The above-mentioned method of improving PMOS device carrier mobility, wherein, the material of substrate oxide skin(coating) is a silicon dioxide.
In sum, owing to adopted technique scheme, the present invention to propose a kind of method of the PMOS of improvement device carrier mobility; Through preparing in the process at grid oxygen; According to the electrical thickness targets of last required grid oxygen, come the controlled oxidation layer thickness through the oxidization time of optimizing silicon-base oxide, again through regulating decoupled plasma nitridation (Decouple Plasma Nitridation; Abbreviation DPN) time or the power of technology; And the time of the quick nitrogenize of accurate optimization annealing (Post Nitridation Anneal is called for short PNA) technology, make nitrogen in the substrate oxide skin(coating) away from itself and silicon substrate contact-making surface; With the mobility in raising hole, thereby improve the transistorized performance of PMOS.
Description of drawings
Fig. 1-the 3rd, the present invention improve the schematic flow sheet of the method for PMOS device carrier mobility;
Fig. 4 is the distribution schematic diagram that improves nitrogen in the preceding substrate oxide thing layer;
Fig. 5 is the distribution schematic diagram that the present invention improves the method improvement back nitrogen of PMOS device carrier mobility.
Embodiment
Be further described below in conjunction with the accompanying drawing specific embodiments of the invention:
Shown in Fig. 1-3; A kind of method of improving PMOS device carrier mobility; At first, on silicon substrate 1, adopt Fast Heating oxidation (Rapid Thermal Oxidation) or original position aqueous vapor to generate (In Situ Steam Generation is called for short ISSG) technology; Growth covers the substrate oxide skin(coating) 2 of silicon substrate 1, and the material of this substrate oxide skin(coating) 2 is silicon dioxide (SiO
2); According to the electrical thickness targets of last required grid oxygen, control the thickness of substrate oxide skin(coating) 2 through the oxidization time of optimizing substrate oxide skin(coating) 2; Wherein, the thickness of substrate oxide skin(coating) 2 is at 7-15A.
Secondly, adopt soft plasma to carry out decoupled plasma nitridation (Decoupled Plasma Nitridation is called for short DPN) technology 3, utilize dosage to be 2E15atom/cm
2-8E15atom/cm
2Nitrogen (nitrogen) be nitrogen Si oxide (SiON) layer 4 with 2 nitrogenize of substrate oxide skin(coating).
Afterwards; Be under 1000-1100 ℃ the environment, to carry out quick nitrogenize annealing (Post Nitridation Anneal is called for short PNA) technology 5 in temperature; Its annealing time is 30-100 second; Plasma damage (plasma damage) during with reparation decoupled plasma nitridation technology 3, and after carrying out nitrogen foam profile control (Nitrogen profile control) technology, the nitrogen silicon oxide layer 6 that deposit polysilicon gate (Poly deposition) 7 covers after repairing; Wherein, through the time or the power of adjusting decoupled plasma nitridation technology 3, and the time of accurate optimization nitrogenize annealing process 5, make on substrate oxide skin(coating) 2 and silicon substrate 1 contact-making surface, to have a spot of nitrogen.
Fig. 4 is the distribution schematic diagram that improves nitrogen in the preceding substrate oxide thing layer; Fig. 5 is the distribution schematic diagram that the present invention improves the method improvement back nitrogen of PMOS device carrier mobility.Shown in Fig. 4-5, after carrying out DPN technology, the nitrogen in the nitrogen silicon oxide layer 4 (N) closes on the contact-making surface of itself and silicon substrate 1; After proceeding PNA technology; By the contact-making surface of the nitrogen (N) in the nitrogen silicon oxide layer of repairing 4 away from itself and silicon substrate 1; Because the nitrogen in the silicon dioxide can effectively improve the mobility in hole away from the contact-making surface of itself and silicon substrate 1, so can improve the transistorized performance of PMOS.
In sum, owing to adopted technique scheme, the present invention to propose a kind of method of the PMOS of improvement device carrier mobility, through optimizing silicon dioxide (SiO
2) can effectively improve carrier mobility with the contact-making surface of silicon substrate (Si-substrate); Promptly through preparing in the process at grid oxygen; According to the electrical thickness targets of last required grid oxygen, come the controlled oxidation layer thickness through the oxidization time of optimizing silicon-base oxide, again through regulating decoupled plasma nitridation (Decouple Plasma Nitridation; Abbreviation DPN) time or the power of technology; And the time of the quick nitrogenize of accurate optimization annealing (Post Nitridation Anneal is called for short PNA) technology, make nitrogen in the substrate oxide skin(coating) away from itself and silicon substrate contact-making surface; Improving the mobility in its hole, thereby improve the transistorized performance of PMOS.
More than specific embodiment of the present invention is described in detail, but it is just as example, the present invention is not restricted to the specific embodiment of above description.To those skilled in the art, any equivalent modifications that the present invention is carried out with substitute also all among category of the present invention.Therefore, not breaking away from impartial conversion and the modification of being done under the spirit and scope of the present invention, all should contain within the scope of the invention.
Claims (8)
1. a method of improving PMOS device carrier mobility is characterized in that, may further comprise the steps:
Step S1: behind growth substrate oxide skin(coating) on the silicon substrate, adopt decoupled plasma nitridation technology, this substrate oxide skin(coating) of nitrogenize;
Step S2: plasma damage and nitrogen foam profile control technology when adopting quick nitrogenize annealing process to repair decoupled plasma nitridation technology, deposit polysilicon gate;
Wherein, on the contact-making surface of the nitrogen in the oxide skin(coating) after the reparation away from itself and silicon substrate.
2. the method for improving PMOS device carrier mobility according to claim 1 is characterized in that, adopts Fast Heating oxidation technology or original position aqueous vapor to generate technology, growth substrate oxide skin(coating) on silicon substrate.
3. the method for improving PMOS device carrier mobility according to claim 1 is characterized in that, the thickness of substrate oxide skin(coating) is 10-15A.
4. the method for improving PMOS device carrier mobility according to claim 1 is characterized in that, the dosage of the nitrogen of nitrogenize substrate oxide skin(coating) is 2E15atom/cm
2-5E15atom/cm
2
5. the method for improving PMOS device carrier mobility according to claim 1 is characterized in that, the soft plasma of decoupled plasma nitridation process using carries out nitriding process.
6. the method for improving PMOS device carrier mobility according to claim 1 is characterized in that, the temperature of nitrogenize annealing process is 1000-1100 ℃ fast.
7. the method for improving PMOS device carrier mobility according to claim 1 is characterized in that, the annealing time of nitrogenize annealing process is 10-50 second fast.
8. the method for improving PMOS device carrier mobility according to claim 1 is characterized in that, the material of substrate oxide skin(coating) is a silicon dioxide.
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Cited By (2)
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| CN103887161A (en) * | 2014-03-20 | 2014-06-25 | 上海华力微电子有限公司 | Method for restraining doping atoms from diffusing in gate dielectric |
| CN103887337A (en) * | 2012-12-21 | 2014-06-25 | 联华电子股份有限公司 | Semiconductor structure and a manufacturing process thereof |
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| CN102427043B (en) | 2015-06-17 |
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