CN102420568A - Oscillator with function of temperature compensation - Google Patents
Oscillator with function of temperature compensation Download PDFInfo
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- CN102420568A CN102420568A CN2011102891030A CN201110289103A CN102420568A CN 102420568 A CN102420568 A CN 102420568A CN 2011102891030 A CN2011102891030 A CN 2011102891030A CN 201110289103 A CN201110289103 A CN 201110289103A CN 102420568 A CN102420568 A CN 102420568A
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Abstract
The invention relates to a method for realizing temperature compensation of an oscillator and an oscillator. In the oscillator, a charging current or a discharging current is used for charging or discharging a capacitor between an upper limit of voltage and a lower limit of voltage. The method for realizing the temperature compensation of the oscillator, disclosed by the invention, comprises the following steps of: utilizing the charging current IR and the discharging current IL with the same order of temperature coefficient KI; utilizing the upper limit of voltage VUPPER, wherein the temperature characteristic of the upper limit of voltage VUPPER depends on the temperature coefficient KI of the current and the first order of temperature coefficient KR of the other circuit device; and utilizing the lower limit of voltage VLOWER which depends on the following equation of VOLOWER=-VUPPER0*KR/KI, wherein the VUPPER0 represents the value of the VUPPER at room temperature. The invention further provides the oscillator of applying the method. The oscillator disclosed by the invention has the advantages of simple structure, small change of temperature compensation along processes, easiness for migration, good robustness and the like.
Description
Technical field
The invention belongs to circuit design field, particularly have the oscillator of temperature-compensating on the integrated circuit.
Background technology
In plurality of applications, for example random asccess memory refreshes/the time base of communication system, needs the oscillator of high stable in the device drive that temperature characterisitic is relevant etc., and for example its output frequency need be stablized etc. with respect to supply voltage/temperature/time.Usually frequency has surpassed 20% with respect to variation of temperature between-40 ℃ to 80 ℃, so the temperature-compensating design has become a big key of oscillator design on the sheet.
The common framework of the design of oscillator is that Control current discharges and recharges electric capacity and realizes on the sheet, when the voltage of electric capacity one end reaches in limited time control logic control discharge; In limited time, control logic control is charged under the voltage of electric capacity one end reaches.Frequency then depends on bound voltage difference and charging and discharging currents, can be expressed as the equation expression formula (1) of temperature:
Freq(T)＝(1/(1/I
U(T)+1/I
L(T)))/(V
SWING(T)*C)， (1)
I wherein
UBe charging current, I
LBe discharging current, V
SWINGBe voltage difference, C is an electric capacity.
[0001] charging and discharging currents generally is to be designed to equate. so equation (1) can be expressed as (2):
Freq(T)＝I(T)/(2*V
SWING(T)*C)， (2)
V
SWING(T)＝V
UPPER(T)-V
LOWER(T)， (3)
I wherein
U=I
L=I, V
SWINGBe upper voltage limit V
UPPERAnd lower voltage limit V
LOWERPoor, shown in equation (3).Therefore the temperature characterisitic of frequency receives V
SWINGInfluence with the electric current I temperature characterisitic.In order to obtain the temperature-compensating of frequency, we can be respectively to V
SWINGCompensate with I, perhaps both are together.
Referring to Fig. 1, formerly technology (US 7,227,422) obtains bound voltage through the bias current resistance of flowing through; Bias current has identical temperature coefficient with charging and discharging currents, because they produce through current mirror; Its medium frequency Freq=I/ [2*I* (R1-R2) * C]=1/ [2* (R1-R2) * C].Usually the temperature coefficient of capacitor C is much smaller than resistance, and therefore, in order to obtain the irrelevant frequency of temperature, R1-R2 needs and temperature has nothing to do.This is formerly in the technology, and the R1 through using the little temperature coefficient of big resistance and the R2 of the big temperature coefficient of little resistance make R1-R2 temperature independent.But different types of resistance is difficult to coupling on technology, and resistance is bigger with the variation of technology, and therefore this method is not easy to realize on integrated circuit.
Referring to Fig. 2, formerly technology (US 5,870,345) realizes a temperature independent electric current, i through an electric current and the circuit with negative temperature coefficient with positive temperature coefficient
c=i
1+ i
2Has a temperature independent reference voltage VREF simultaneously; The irrelevant frequency of temperature obtains through temperature irrelevant electric current and voltage.Current i
1Be to realize having positive temperature coefficient through voltage-controlled FET; Current i
2Realize having negative temperature coefficient through the supply voltage resistance of flowing through.In order to realize that lucky compensation obtains the irrelevant i of temperature
c, need accurately control FET voltage and resistance, but the two normally unfavorable realization with technique change.And i
2Need to consider the change in voltage on the electric capacity, realize stable i
2Will be very difficult.
Summary of the invention
The object of the present invention is to provide a kind of oscillator of realizing temperature compensation function, temperature characterisitic device has still less been adopted in its temperature-compensating, has reduced its dependency degree for technology, has better robustness.
In order to realize above purpose, one aspect of the present invention provides a kind of method of oscillator temperature compensation, and said oscillator comprises that charging and discharging currents discharges and recharges between bound voltage an electric capacity, and said method comprises:
Use has identical single order temperature coefficient K
ICharging current I
UWith discharging current I
L
Use a upper voltage limit V
UPPER, its temperature characterisitic depends on the temperature coefficient K of above-mentioned electric current
ISingle order temperature coefficient K with another circuit devcie
R
And use a lower voltage limit V
LOWER, and determine by following equation:
V
LOWER=-V
UPPER0* K
R/ K
I, V wherein
UPPER0Be V
UPPERValue at room temperature.
Second aspect present invention provides a kind of oscillator that has temperature-compensating, and comprising a reference current, it has single order temperature coefficient K
ISome current mirrors are used for obtaining charging current and discharging current from reference current; Has single order temperature coefficient K
RResistance, an end ground connection, an end is connected on reference to from I
REFThe current source output, be used to produce a upper voltage limit V
UPPERA temperature independent lower voltage limit V
LOWERController, two switches, and electric capacity, said electric capacity bottom crown ground connection, top crown is connected to the charging current source output terminal through switch and discharging current leaks input; Controller and switch are used to control described charging current at electric capacity top crown voltage V
CapArrive V
LOWERIn time, charge to electric capacity, and discharging current is at electric capacity top crown voltage V
CapArrive V
UPPERThe time to capacitor discharge.
To come the concrete details of the present invention of setting forth through embodiment below.The details of below announcing only is to help the public to increase for understanding of the present invention and non-limiting the present invention.
Description of drawings
Shown in Figure 1 for formerly the technology one of.
Shown in Figure 2 is another technology formerly.
Shown in Figure 3 is according to a preferred embodiment of the present invention circuit structure diagram.
Shown in Figure 4 is according to a preferred embodiment of the present invention circuit working flow chart.
Shown in Figure 5 be according to a preferred embodiment of the present invention in the structure chart of band-gap reference circuit.
Shown in Figure 6 is the measurement result of a preferred embodiment of the invention, and with the result's of other structure oscillation device structures comparison.
Specific embodiment
Shown in Figure 3 is a preferred embodiment with oscillator of temperature-compensating according to the invention.Comprising a current reference source 301 reference current I is provided
REF, and current mirror 302-306, be used to provide electric current I
R3, I
UAnd I
LAbove-mentioned electric current has identical temperature characterisitic.An electric capacity 310, its top crown are used to produce a swing voltage (swing voltage) V
SWINGA band-gap reference 320 is used to provide the temperature reference voltage V that has nothing to do
REFA buffer 322 is used to strengthen the reference voltage driving force; A resitstance voltage divider 323 is made up of with R2 resistance R 1, is used for from V
REFV is provided
LOWERResistance R 3, one end ground connection, another termination bias current I
R3, be used to provide upper voltage limit V
UPPERAnd controller 330, be used for control switch 331-332, electric capacity 310 is discharged and recharged.
Shown in Figure 4 is the workflow of oscillator.Duration of work, in controller 330 control down, switch 331 and one of 332 quilts are closed, and another then is disconnected; When switch 331 is closed, charging current I
UTo electric capacity 310 chargings, draw high electric capacity 310 top crown voltage V
CapWork as V
CapReach V
UPPERThe time, oscillator output signal V
OscLogic upset, and controller 330 cut-off switch 331 close a switch 332 simultaneously; Discharge circuit I
LTo electric capacity 310 discharges, drag down V
OscWork as V
CapBe lower than V
LOWERThe time, oscillator output signal V
OscLogic upset, and controller 330 cut-off switch 332 close a switch 331 simultaneously; Charging current I
UTo electric capacity 310 chargings, with V
CapDraw V
UPPERAbove-mentioned charge and discharge process constantly repeats, so oscillator outputting oscillation signal V
OscFrequency of oscillation depends on charging and discharging currents and bound voltage difference.Usually the charging and discharging currents size is designed to one and shows and obtain 50% clock duty cycle.Controller 330 normally form by two comparators and rest-set flip-flop and technology formerly shown in Figure 1 in comparator 110,120, and the connection of trigger 130 is similar, is known technology, repeats no more here.
Shown in Figure 5 is reference current I
REFThe acquisition circuit, be a band-gap reference.Can know said reference current I by Circuit theory
REFThrough following equation decision I
REF=Δ V
Be/ R4, wherein Δ V
BeBe the V of two BJT
BePoor, R4 and R3 are same type resistance, have the uniform temp COEFFICIENT K
RThe I that hence one can see that
REFTemperature coefficient comes from two parts, and the one, Δ V
BeTemperature coefficient, on the occasion of; The 2nd, R4 temperature coefficient K
R, be generally negative value.So I
REFThe high-order temperature coefficient can appear in temperature coefficient, but when hour, the temperature coefficient of this high-order can be ignored, and we still think reference current I
REFHas single order temperature coefficient K
ICan also there be additive method to obtain to have the reference current of single order temperature coefficient, for example PTAT electric current.
To explain how temperature-compensating realizes from theoretical derivation below, and the condition of realization.
The voltage/current shown in Figure 3 and the relation of temperature can use following equation to express:
I
REF(T)＝I
REF0*(1+K
I*(T-T
0))， (4)
I(T)＝I
U(T)＝I
L(T)＝A
1*I
REF(T)＝A
1*I
REF0*(1+K
I*(T-T
0))， (5)
I
R3(T)＝A
2*I
REF(T)＝A
2*I
REF0*(1+K
I*(T-T
0))， (6)
V
LOWER(T)＝V
REF*R2/(R1+R2)＝V
LOWER， (7)
R3(T)＝R3
0*(1+K
R*(T-T
0))， (8)
V
UPPER(T)＝R3(T)*I
R3(T)＝R3
0*(1+K
R*(T-T
0))*A
2*I
REF0*(1+K
I*(T-T
0))
＝R3
0*A
2*I
REF0*(1+K
R*(T-T
0))*(1+K
I*(T-T
0))
＝R3
0*A
2*I
REF0*(1+(K
I+K
R)*(T-T
0)+K
I*K
R*(T-T
0)
2)
≈R3
0*A
2*I
REF0*(1+(K
I+K
R)*(T-T
0))
＝V
UPPER0*(1+(K
I+K
R)*(T-T
0))，
＝V
UPPER0*(K
I+K
R)*(1/(K
I+K
R)+(T-T
0))， (9)
I wherein
REF0Be room temperature T
0Following reference current I
REFK
IBe I
REFSingle order temperature coefficient (temperature-compensating of the present invention refers to the single order temperature-compensating, thereby described temperature coefficient all is the single order temperature coefficient except that specializing); A
1Be I
UAnd I
LWith respect to I
REFCurrent ratio; A
2Be I
R3With respect to I
REFCurrent ratio; K
RIt is the temperature coefficient of resistance R 3.In equation (7), because resistance R 1 is the same type resistance that adopts same material and structure with R2, thereby have identical temperature coefficient, resistance ratio R2/ (R1+R2) and temperature are irrelevant, so V
LOWERTemperature independent; V in equation (9)
UPPERAt room temperature T
0Value can be expressed as:
V
UPPER0＝R3
0*A
2*I
REF0 (10)
Equation (9) has adopted first approximation, and the temperature characterisitic of second order is rejected, and two exponent parts can be expressed as
V
UPPER_ERROR＝R3
0*A
2*I
REF0*K
I*K
R*(T-T
0)
2
＝V
UPPER0*K
I*K
R*(T-T
0)
2 (11)
This will bring a little error to the temperature coefficient of frequency.
V with equation (7)
LOWER(T) and the V of equation (8)
UPPER(T) substitution equation (3) can obtain swing voltage V
SWING(T):
V
SWING(T)＝V
UPPER(T)-V
LOWER(T)
＝V
UPPER0*(K
I+K
R)*((1-V
LOWER/V
UPPER0)/(K
I+K
R)+(T-T
0)) (12)
With V in I (T) in the equation (5) and the equation (12)
SWING(T) substitution equation (2) can obtain:
Freq(T)
＝I(T)/(2*V
SWING(T)*C)
＝(A
1*I
REF0*K
I/(2*C*V
UPPER0*(K
I+K
R)))*(1/K
I+(T-T
0))/((1-V
LOWER/V
UPPER0)/(K
I+K
R)+(T-T
0))
＝(A
1*I
REF0*K
I/(2*C*V
UPPER0*(K
I+K
R)))*F
COMP(T) (13)
The temperature correlation part F of its medium frequency
COMP(T) be:
F
COMP(T)＝(1/K
I+(T-T
0))/((1-V
LOWER/V
UPPER0)/(K
I+K
R)+(T-T
0)) (14)
F when frequency and temperature are irrelevant
COMP(T)=1, therefore,
1/K
I+(T-T
0)＝(1-V
LOWER/V
UPPER0)/(K
I+K
R)+(T-T
0)，
After the simplification,
1/K
I＝(1-V
LOWER/V
UPPER0)/(K
I+K
R)，
(K
I+K
R)＝K
I*(1-V
LOWER/V
UPPER0)，
K
R＝-K
I*(V
LOWER/V
UPPER0)， (15)
Therefore obtain
V
LOWER＝-V
UPPER0*K
R/K
I (16)
K wherein
R, K
ICan from technical papers, obtain.Common K
IBe a positive temperature coefficient, from PTAT (Proportional To Absolute Temperature) electric current; And K
RBe sheet semiconductor-on-insulator resistance, for example the temperature coefficient of polysilicon resistance, normally a negative temperature coefficient; In order to make V
LOWERLess than V
UPPER0, common K
RAbsolute value is less than K
I, be actually much smaller than.
Work as F
COMP(T) be at 1 o'clock:
Freq＝A
1*I
REF0*K
I*/(2*C*V
UPPER0*(K
I+K
R)) (18)
With V in the equation (10)
UPPER0Substitution equation (18),
Freq＝A
1*I
REF0*K
I*/(2*C*R3
0*A
2*I
REF0*(K
I+K
R))，
＝A
1*K
I*/(2*C*R3
0*A
2*(K
I+K
R))， (19)
If A
1=A
2, then
Freq＝K
I*/(2*C*R3
0*(K
I+K
R)) (20)
Work as K
RBe far smaller than K
IThe time Freq ≈ 1*/(2*C*R3
0) (21)
Negative temperature coefficient resister is to obtain easily in integrated circuit technology, and for example the polysilicon resistance in certain technology has temperature coefficient K
R=-5e-4/ ℃.Consider the oscillator design of a 10MHz output frequency, electric capacity 310 is 5pF; Reference current I
REFTemperature coefficient K
I=5e-3/ ℃, current value is 10uA under the room temperature; So
K
I/(K
I+K
R)＝5*10
-3/(5*10
-3-5*10
-4)＝1.11
A1=10and A2=2 can obtain from equation (19):
R3
0＝1.11*5/(2*5*10
-12*10
7)＝55.5Kohm，
V
UPPER0＝1*I
REF0*R3
0＝55.5K*20uA＝1.11V，and
V
LOWER＝1.11*5*10
-4/5*10
-3＝0.11V；
The result who after flow under certain technology, measures for present embodiment shown in Figure 6, wherein OSC1 is the oscillator that has adopted temperature compensation structure according to the invention, its frequency is 3.75% with variation of temperature in-40 ℃～90 ℃ scopes; And on the identical chip, the respective change of oscillator OSC2 that does not adopt temperature-compensating is up to 14.83%.In fact, from emulation, the respective change of OSC1 can accomplish 0.66%, and the single order temperature coefficient is by full remuneration.
In sum, the invention has the advantages that (1) is simple in structure; Through the temperature coefficient of one type resistance, can obtain the irrelevant oscillator frequency of temperature by equation (16); Compensation does not rely on accurate resistance value, and depends on the resistance ratio, therefore under integrated circuit technology, realizes easily; (2) reduced the dependence of technology and the sensitiveness of technique change; Because do not need the coupling of the domain between dissimilar resistance or other device, and the coupling of temperature coefficient, oscillator of the present invention and temperature compensation have reduced the dependence to technology, can be applied in easily under the different process; Owing to do not need accurate resistance value, temperature-compensating and little with the variation of technological parameter can realize more healthy and stronger temperature-compensating.
Claims (10)
1. the temperature compensation of an oscillator, said oscillator comprises that charging and discharging currents discharges and recharges between bound voltage an electric capacity, said method comprises:
Use has identical single order temperature coefficient K
ICharging current I
UWith discharging current I
L
Use a upper voltage limit V
UPPER, its temperature characterisitic depends on the temperature coefficient K of above-mentioned electric current
ISingle order temperature coefficient K with another circuit devcie
R
And use a lower voltage limit V
LOWER, and determine by following equation
V
LOWER=-V
UPPER0* K
R/ K
I, V wherein
UPPER0Be V
UPPERValue at room temperature.
2. like claim 1 described method, wherein K
IBe positive number; K wherein
RBe negative; And K
IGreater than K
RAbsolute value.
3. like claim 1 described method, wherein charging current I
UWith discharging current I
LReference is from electric current I
REFSaid reference current I
REFThrough following equation decision I
REF=Δ V
Be/ R4, wherein Δ V
BeBe the V of two BJT
BePoor, wherein resistance R 4 has K
RThe single order temperature coefficient.
4. like claim 1～3 arbitrary described method, wherein V
UPPER0Be by having single order temperature coefficient K
IThe current source resistance (R3) of flowing through obtain, wherein this resistance (R3) has K
RThe single order temperature coefficient.
5. like claim 1 described method, wherein V
LOWERBy a reference voltage V
REFObtain through resitstance voltage divider, the resistance of said resitstance voltage divider is and the same type resistance of R3, has identical single order temperature coefficient.
6. oscillator with temperature-compensating, comprising a reference current, it has single order temperature coefficient K
ISome current mirrors are used for from reference current I
REFObtain charging current I
UAnd discharging current I
LHas single order temperature coefficient K
RResistance (R3), an end ground connection, an end is connected on reference to from I
REFThe current source output, be used to produce a upper voltage limit V
UPPERA temperature independent lower voltage limit V
LOWERController, two switches, and electric capacity, said electric capacity bottom crown ground connection, top crown is connected to the charging current source output terminal through switch and discharging current leaks input; Controller and switch are used to control described charging current at electric capacity top crown voltage V
OscArrive V
LOWERIn time, charge to electric capacity, and discharging current is at electric capacity top crown voltage V
OscArrive V
UPPERThe time to capacitor discharge.
7. like claim 6 described oscillator, wherein V
LOWER=-V
UPPER0* K
R/ K
I, V wherein
UPPER0Be V
UPPERValue at room temperature.
8. like claim 6 described oscillators, comprise that also a band-gap reference is used to provide I
REF, said reference current I
REFThrough following equation decision I
REF=Δ V
Be/ R4, wherein Δ V
BeBe the V of two BJT
BePoor, R4 and R3 are same types, have the uniform temp coefficient.
9. like claim 6～8 arbitrary described oscillators, wherein band-gap reference is used to the reference voltage V that provides a temperature irrelevant
REF, V
LOWERBy V
REFObtain.
10. oscillator as claimed in claim 9, wherein V
LOWERBy reference voltage V
REFObtain through resitstance voltage divider, said resitstance voltage divider comprises resistance R 1 and R2, and they and the same type of R3 have the uniform temp coefficient, and makes: V
LOWER=V
REF* R1/ (R1+R2).
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|---|---|---|---|
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|---|---|---|---|
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103383584A (en) * | 2013-07-05 | 2013-11-06 | 成都锐成芯微科技有限责任公司 | Segmented temperature compensation system |
| CN103795344A (en) * | 2014-01-21 | 2014-05-14 | 深圳市芯海科技有限公司 | Oscillator circuit with temperature compensation function |
| CN108631728A (en) * | 2018-05-10 | 2018-10-09 | 厦门华厦学院 | One kind can single chip integrated positive temperature coefficient compensated oscillator circuit |
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| CN1210393A (en) * | 1997-09-04 | 1999-03-10 | 西门子公司 | Temperature independent oscillator |
| CN1726641A (en) * | 2002-12-17 | 2006-01-25 | 皇家飞利浦电子股份有限公司 | Temperature compensated RC oscillator |
| US20060226922A1 (en) * | 2005-04-07 | 2006-10-12 | Rajagopal Narasimhan T | Process, supply, and temperature insensitive integrated time reference circuit |
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| CN1210393A (en) * | 1997-09-04 | 1999-03-10 | 西门子公司 | Temperature independent oscillator |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103383584A (en) * | 2013-07-05 | 2013-11-06 | 成都锐成芯微科技有限责任公司 | Segmented temperature compensation system |
| CN103383584B (en) * | 2013-07-05 | 2015-07-22 | 成都锐成芯微科技有限责任公司 | Segmented temperature compensation system |
| CN103795344A (en) * | 2014-01-21 | 2014-05-14 | 深圳市芯海科技有限公司 | Oscillator circuit with temperature compensation function |
| CN108631728A (en) * | 2018-05-10 | 2018-10-09 | 厦门华厦学院 | One kind can single chip integrated positive temperature coefficient compensated oscillator circuit |
| CN108631728B (en) * | 2018-05-10 | 2023-08-11 | 厦门华厦学院 | Monolithically-integrated positive temperature coefficient compensation oscillator circuit |
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| Publication number | Publication date |
|---|---|
| CN102420568B (en) | 2015-07-01 |
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