CN103795344A - Oscillator circuit with temperature compensation function - Google Patents

Oscillator circuit with temperature compensation function Download PDF

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CN103795344A
CN103795344A CN201410026084.6A CN201410026084A CN103795344A CN 103795344 A CN103795344 A CN 103795344A CN 201410026084 A CN201410026084 A CN 201410026084A CN 103795344 A CN103795344 A CN 103795344A
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voltage
circuit
vh
temperature
temperature coefficient
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李晓
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深圳市芯海科技有限公司
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Abstract

The invention discloses an oscillator circuit with a temperature compensation function. The oscillator circuit comprises a reference current generation circuit, a reference source, a VH voltage generation circuit, a voltage adding circuit for adding a reference voltage to a VH voltage, and a charging and discharging control unit. The charging and discharging control unit takes a threshold voltage VT as a charging and discharging threshold value, and controls a current IREF to charge or discharge a capacitor C between the threshold voltage and the ground. When the capacitor C is charged to reach the threshold voltage, logic output reverse is triggered and repeatedly conducted. By means of the oscillator circuit, the output clock frequency is compensated for along with the change of the temperature through a resistor with the positive temperature coefficient, the temperature coefficient of the output clock frequency is small, the discreteness is small, the temperature compensation effect is improved, transfer between different processes is facilitated, and the oscillator circuit is suitable for large-scale mass production and application; meanwhile, an output clock can still have a good duty ratio at the high frequency.

Description

带有温度补偿的振荡器电路 Oscillator circuit with temperature compensation

技术领域 FIELD

[0001] 本发明属于电路领域,特别涉及一种振荡器电路。 [0001] The present invention belongs to the field of circuits, and particularly relates to an oscillator circuit.

背景技术 Background technique

[0002] 传统的片上振荡器一般采用RC振荡器结构,振荡频率和RC相关。 [0002] The conventional on-chip oscillator is generally used RC oscillator configuration, the oscillation frequency and associated RC. 由于片上电阻R通常具有较大的温度系数,因此RC振荡器的输出时钟频率也具有较大的温度系数。 Since the resistance R on-chip typically has a large temperature coefficient, the output clock frequency of the RC oscillator also has a large temperature coefficient. 通常采用两种具有相反符号的温度系数的电阻来合并为一个具有零温度系数(通常是一阶近似为零)的电阻,从而使得时钟频率和温度无关。 Usually two resistor having a temperature coefficient of opposite sign to be combined into a zero temperature coefficient (typically a zero order approximation) having a resistance, so that the clock frequency and independent of temperature. 但使用具有相反符号的温度系数的电阻来补偿温度系数时,这两种电阻通常不具有工艺相关性,因此其中一个电阻相对于另一电阻,其阻值的变化通常很大,例如可以达到+/-30%之多;且不同种类的电阻之间无法作匹配,也导致其阻值比例关系的不确定性;而两种电阻阻值关系的变化将直接导致温度补偿的偏移,导致补偿后振荡器输出时钟频率温度系数仍然较大。 However, when used with a sign opposite to the resistance temperature coefficient to compensate for temperature coefficient, the resistance of these two processes have generally not correlated, and therefore the resistance relative to the other wherein a resistance, which resistance change is usually large, for example, up to + / as much as 30%; and can not make a match between the different types of resistance, the resistance can lead to uncertainty proportional relationship; two resistive changes will directly lead to resistance relationship of the offset temperature compensation, compensation leads after the temperature coefficient of the oscillator output clock frequency is still large. 总之,使用两种电阻来补偿温度系数时具有随工艺变化大,离散性大,补偿效果不理想等问题。 In short, when using two compensating resistor having a temperature coefficient with the process changes, large dispersion compensation effect is not satisfactory and so on.

[0003] 在专利申请201110289103.0中,公布了一种只采用一种温度系数电阻来实现的具有温度补偿的振荡器,避免了两种不同温度系数器件之间匹配不准的问题,但该申请中所公布的结构限定了采用的电阻必须具有负温度系数,因此限制了电阻的选择范围;此外,该申请中公布的结构电路在VUPPEK、Vlowee两个电压充放电,充放电电流的匹配不准会导致振荡器在输出频率较高(如>10MHz)的时钟信号时占空比变差。 [0003] In the patent application 201110289103.0, published an oscillator with temperature compensation only use a temperature coefficient of resistance to be achieved, avoiding the problem of different temperature coefficients between the two matching device are not allowed, but in this application published structure defines resistor used must have a negative temperature coefficient, thus limiting the choice of the resistance; in addition, the circuit configuration in this application published VUPPEK, Vlowee two discharge voltage, discharge current will not be allowed to match cause the oscillator duty cycle is deteriorated when the output frequency is high (e.g.,> 10MHz) clock signal.

发明内容 SUMMARY

[0004] 为解决上述问题,本发明的目的在于提供一种带有温度补偿的振荡器电路,以该振荡器电路采用一种具有正温度系数的器件使得其输出时钟时钟频率的随温度的变化得到补偿,补偿的效果随工艺变化小,离散性小,并且振荡器能够在输出高频时钟时能具有好的占空比。 [0004] In order to solve the above problems, an object of the present invention to provide a temperature compensating circuit for an oscillator to the oscillator circuit uses a device having a positive temperature coefficient such that the temperature dependence of the output clock of the clock frequency be compensated, the compensation effect of small changes with the process, discrete small, and the oscillator can be a basis for good high frequency clock duty cycle output.

[0005] 为实现上述目的,本发明的技术方案为: [0005] To achieve the above object, the technical solution of the present invention is:

[0006] 一种带有温度补偿的振荡器电路,其特征在于该振荡器电路包括: [0006] An oscillator with a temperature compensation circuit, characterized in that the oscillator circuit comprises:

[0007] 一个参考电流产生电路,用于产生一个具有一阶正温度系数Ki的电流IREF ; [0007] a reference current generating circuit for generating a first order having a positive temperature coefficient Ki, the IREF current;

[0008] 一个基准源,用于提供一基准电压VREF ; [0008] a reference source for providing a reference voltage of the VREF;

[0009] 一个VH电压产生电路,提供一具有一阶正温度系数Kv的电压VH ; [0009] a VH voltage generating circuit is provided having a first order temperature coefficient Kv positive voltage VH;

[0010] —个电压相加电路,用于将基准电压和VH电压相加,产生一个阈值电压VT ; [0010] - a voltage addition circuit, the reference voltage, and for adding the voltage VH, the VT generates a threshold voltage;

[0011] 一个充放电控制单元,其以阈值电压VT作为充放电阈值,控制电流IREF对电容C在阈值电压和地之间进行充放电,当电容C充电至上述阈值电压时,触发逻辑输出反转,周而复始。 [0011] A charge and discharge control unit, which is the threshold voltage VT of the charge and discharge threshold, the control current IREF of the capacitor C is charged and discharged between a threshold voltage and, when the capacitor C is charged to the threshold voltage, trigger logic output of the inverse turn again and again.

[0012] 所述该振荡器电路输出的逻辑信号就是振荡器的输出时钟。 [0012] The logic circuit output signal which is the output of the oscillator clock oscillator.

[0013] 所述参考电流产生电路为带隙基准电压源,IREF电流由带隙基准电压源产生;带隙基准电压源串联两个分压电阻Rl、R2,VREF由带隙基准电压源输出电压通过分压电阻Rl, R2产生;VH电压产生电路是由电阻R3构成,VH是通过IREF流经电阻R3产生;电压相加电路是由缓冲寄存器构成,VT则由电压相加电路产生,其是将VREF通过缓冲寄存器之后接至R3的低电位端,因此VT=VH+VREF ;充放电控制单元由五个MOS管303~307,电容Cl、C2,比较器310、311,RS触发器312组成,其中一个MOS管303接于电源输入端,四个MOS管分成两组并联在上述接于电源输入端的MOS管303上;M0S管304和305串联在一起,MOS管306和307串联在一起,电容C1、C2分别接在每组MOS管:M0S管304和305、M0S管306和307的中间,MOS管后接有比较器310,311和RS触发器312。 [0013] The reference current generation circuit is a bandgap reference voltage source, IREF current generated by a bandgap reference voltage source; bandgap reference voltage source in series two resistors Rl, R2, VREF voltage by the output bandgap reference voltage source by dividing resistors Rl, R2 is generated; the VH voltage generating circuit is composed of a resistor R3, VH is generated by IREF flowing through the resistor R3; voltage addition circuit is composed of a buffer register, VT generated by a voltage addition circuit, which is after passing through the VREF buffer register R3 is connected to the lower potential side, and therefore VT = VH + VREF; discharge control means consists of five MOS transistors 303 to 307, capacitors Cl, C2, comparators 310,311, RS flip-flop 312 consisting of wherein a MOS transistor connected to the power input terminal 303, four MOS transistors in parallel with the two groups above MOS transistor 303 is connected to the power input terminal; M0S tubes 304 and 305 series with the MOS transistors 306 and 307 connected in series, capacitors C1, C2 are connected to each MOS transistor: M0S tubes 304 and 305, M0S 306 and the intermediate pipe 307 is connected with a comparator 310, 311 and the RS flip-flop 312 after the MOS transistor.

[0014] 上述带有温度补偿的振荡器电路,其还包括有镜箱电路源,镜像电路源为并联于电源输入端的三个PMOS管301、302、303,其流过的电流俱为IREF。 [0014] The oscillator circuit with temperature compensation, which further comprises a mirror box source circuit, a mirror circuit is connected in parallel to three PMOS source power input terminal 301, a tube current which flows all of IREF.

AVbe AVbe

[0015] 所述IREF通过下式得到: [0015] The IREF obtained by the following formula:

Figure CN103795344AD00041

其中R4为带隙基准电压源中的电阻。 Wherein R4 is a bandgap reference voltage source resistance.

Rh Rh

[0016] 所述R3,R4为同一类型电阻。 [0016] The R3, R4 resistor of the same type. 且R3,R4为具有正温度系数Kr的电阻。 And R3, R4 having a positive temperature coefficient of resistance Kr.

、 P IREF , P IREF

[0017] 一般而言,输出时钟的频率 [0017] In general, the output frequency of the clock

Figure CN103795344AD00042

,设TO为参考温度点,如室温 , TO is the reference temperature set point, such as room temperature

300K, T为任意温度点,则频率分别为 300K, T is the temperature at any point, the frequencies are

Figure CN103795344AD00043

[0021] 输出时钟频率温度系数为O时,F (TO)/F (T) = 1,则 [0021] When the temperature coefficient of the output clock frequency is O, F (TO) / F (T) = 1, then

Figure CN103795344AD00044

[0023] 由此得 [0023] Thus obtained

Figure CN103795344AD00045

[0025] 因为 [0025] because

Figure CN103795344AD00046

[0028] 所以 [0028] Therefore,

Figure CN103795344AD00047

[0030] 其中Kr为电阻的一阶正温度系数;当调节VREF使之满足条件⑶时,振荡器输出时钟频率的一阶温度系数为0,实现了温度补偿。 [0030] wherein Kr is the resistance of a positive temperature coefficient order; when adjusted so as to satisfy the condition ⑶ VREF, the output of the first order temperature coefficient of the oscillator clock frequency is 0, to achieve temperature compensation. 从(8)式可以看出, As can be seen from equation (8),

[0031] 由于Ki为正值,为了保证VREF为一正值(方便电路实现),Kr也为一正值。 [0031] Ki is a positive value because, in order to ensure a positive value VREF (convenient circuit implementation), is also a positive value Kr.

[0032] 本发明设计的振荡器电路的采用了一种具有正温度系数的电阻使得输出时钟频率随温度的变化得到补偿,输出时钟频率的温度系数小,且随工艺的变化小,离散性小,提高了温度补偿效果,有利于在不同工艺间迁移,适合大规模量产应用;同时输出时钟在频率较高时仍然可以具有较好的占空比。 [0032] The design of the oscillator circuit of the invention employs a resistor having a positive temperature coefficient such that the output clock frequency variation with temperature is compensated, the temperature coefficient of the output clock frequency is small, and a small change with the process, discrete, small increase the temperature compensation effect, facilitate migration between different processes suitable for mass production applications; while still having a good output clock duty cycle at higher frequencies.

附图说明 BRIEF DESCRIPTION

[0033] 图1是本发明所实施的带有温度补偿的振荡器电路原理图。 [0033] FIG. 1 is a schematic circuit diagram of an oscillator with temperature compensation of the embodiment of the present invention.

[0034] 图2是本发明所实施的带有温度补偿的振荡器电路的电路图。 [0034] FIG. 2 is a circuit diagram of an oscillator circuit with temperature compensation of the embodiment of the present invention.

[0035] 图3是本发明所实施bandgap具体电路。 [0035] FIG. 3 is a circuit bandgap particular embodiments of the present invention.

[0036] 图4为本发明所实施的充放电的工作流程图。 [0036] FIG 4 is a flowchart of the charging and discharging of the embodiment of the present invention.

具体实施方式 Detailed ways

[0037] 为了使本发明的目的、技术方案及优点更加清楚明白,以下结合附图及实施例,对本发明进行进一步详细说明。 [0037] To make the objectives, technical solutions and advantages of the present invention will become more apparent hereinafter in conjunction with the accompanying drawings and embodiments of the present invention will be further described in detail. 应当理解,此处所描述的具体实施例仅仅用以解释本发明,并不用于限定本发明。 It should be understood that the specific embodiments described herein are only intended to illustrate the present invention and are not intended to limit the present invention.

[0038] 图1所示,本发明所实现的带有温度补偿的振荡器电路,其电路原理图至少包括: [0038] As shown in FIG. 1, the present invention is achieved with a temperature compensated oscillator circuit, the circuit diagram comprising at least:

[0039] 一个参考电流产生电路,用于产生一个具有一阶温度系数Ki的电流IREF ; [0039] a reference current generating circuit for generating a first order temperature coefficient Ki of the IREF current;

[0040] 一个基准源,用于提供一基准电压VREF ; [0041] 一个VH电压产生电路,提供一具有一阶正温度系数Kv的电压VH ; [0040] a reference source for providing a reference voltage VREF; [0041] a VH voltage generating circuit is provided having a first order temperature coefficient Kv positive voltage VH;

[0042] —个电压相加电路100,用于将基准电压和VH电压相加,产生一个阈值电压VT ; [0042] - a voltage addition circuit 100, a reference voltage, and for adding the voltage VH, the VT generates a threshold voltage;

[0043] 一个充放电回路200,其以阈值电压VT作为充放电阈值,控制电流IREF对电容C在阈值电压和地之间进行充放电,当电容C充电至上述阈值电压时,触发逻辑输出反转,周而复始。 [0043] A charge-discharge circuit 200, which is the threshold voltage VT of the charge and discharge threshold, the control current IREF of the capacitor C is charged and discharged between a threshold voltage and, when the capacitor C is charged to the threshold voltage, trigger logic output of the inverse turn again and again. 电路输出的逻辑信号就是振荡器的输出时钟。 A logic circuit output signal is the output of the clock oscillator.

[0044] 具体电路的一种实现方式如图2所示,IREF电流由带隙基准电压源Bandgap320产生,VREF由Bangap320输出电压通过分压电阻R1,R2产生;PM0S管301、302、303为镜像电路源,其流过的电流俱为IREF ;VH通过IREF流经电阻R3产生;VT则由电压相加电路330产生,其原理是将VREF通过Buffer308之后接至R3的低电位端,因此VT=VH+VREF ;充放电回路由MOS管303~307,电容Cl、C2,比较器310,311, RS触发器312组成。 One implementation [0044] The specific circuit shown in Figure 2, IREF current generated by a bandgap reference voltage source Bandgap320, VREF Bangap320 the output voltage dividing resistors R1, R2 generated; 302, 303 for the PMOS mirror tube source circuit, the current which flows all of IREF; the VH generated by IREF flowing through the resistor R3; the VT generated by a voltage addition circuit 330, the principle is connected to R3 after the low potential VREF through Buffer308, so VT = VH + VREF; routing MOS charge-discharge pipe 303 back to 307, capacitors Cl, C2, comparators 310,311, RS flip-flop 312 components.

[0045] 图3所示,为图2中bandgap320的具体电路。 As shown in [0045] Figure 3 is a specific circuit of FIG bandgap320 2. 三极管3201、3202具有不同的面积,电阻R4和电阻R3为同一类型的电阻,便于作匹配,且电阻R4和电阻R3均具有正温度系数Kr,根据图2容易得到 Transistors having different areas 3201, 3202, resistor R3 and resistor R4 to the resistor of the same type, allow for a match, and the resistor R4 and the resistor R3 has a positive temperature coefficient Kr, easily obtained according to FIG. 2

Δ Vhe Δ Vhe

[0046] IREF =——— (9) [0046] IREF = --- (9)

RA RA

[0047] 因此 [0047] Therefore

[0048] VH ^ AVbe-- (10) [0048] VH ^ AVbe-- (10)

RA RA

[0049] VT = ^e--+VREF (11) [0049] VT = ^ e - + VREF (11)

RA RA

[0050] 如图4所示为充放电回路的工作原理。 [0050] As shown in FIG charge-discharge circuit 4 works. 步骤SlOl时,Gl为低,G2为高,IREF对电容Cl充电;同时电容C2放电至O ;然后进入步骤S102,当VCl达到VT时,比较器310输出翻转为低,于是Gl变高G2变低;然后进入步骤S103,此时Gl为低,G2为高时,IREF对电容Cl充电;同时电容C2放电至O ;然后进入步骤S104,当VC2达到VT时,比较器311输出翻转为低,G2变高Gl变低。 Step the SLOL, Gl low, G2 is high, the IREF capacitor Cl charged; while capacitor C2 is discharged to O; then proceeds to step S102, when VCl reaches the VT, the output of comparator 310 is inverted to low, thus Gl increased G2 becomes low; then proceeds to step S103, the case of a low Gl, G2 is high, the IREF charging capacitor Cl; while capacitor C2 is discharged to O; then proceeds to step S104, when VC2 reaches VT, 311 inverted output of the comparator is low, G2 high Gl low. 如此周而复始,Gl或者G2即为输出时钟。 Again and again, Gl or G2 is the output clock.

[0051] 由于IREF对Cl,C2交替充电来分别定义输出时钟高电平和低电平的时间,而片上电容Cl、C2的匹配又可以做到非常的精确,因此该结构可以输出时钟具有非常好的占空t匕。 [0051] Since IREF of Cl, C2 are alternately charged output clock high and low times are defined, and the on-chip capacitors Cl, C2, and matching can be done very accurately, so that the structure may have a very good output clock t duty dagger. 好的占空比对于ADC采样时钟来讲非常重要。 Good duty cycle is very important in terms of the ADC sample clock.

[0052] 根据式(9)、(10)可得,电路IREF —阶温度系数Ki为: [0052] The formula (9), (10) available, the circuit IREF - order temperature coefficient Ki is:

[0053] [0053]

Figure CN103795344AD00061

[0054] Kr为电阻R4的一阶温度系数,TO参考温度,如室温300K ;Ki 一般大于0,即Kr〈l/TOo [0054] Kr is the first order temperature coefficient of the resistor R4, TO reference temperature, such as room temperature, 300K; Ki generally greater than 0, i.e., Kr <l / TOo

[0055] 电压VH的温度系数Kv为: [0055] The temperature coefficient Kv voltage VH is:

[0056] Kv = J^ (13) [0056] Kv = J ^ (13)

[0057] 因此将式(12)、(13)带入式(8)可得 [0057] Thus formula (12), (13) into the formula (8) can be obtained

[0058] [0058]

Figure CN103795344AD00062

[0059] 其中 [0059] in which

[0060] [0060]

Figure CN103795344AD00063

[0061] 由式(14)、(15)可知,VREF只和Kr以及VH(TO)有关,这两个参数不受电阻或MOS管工艺角的影响;因此补偿成立等式(14)具有工艺无关性。 [0061] by formula (14), (15) can be seen, only the VREF, and Kr and VH (TO) related to these two parameters is not affected by resistance or MOS transistor technology angle; thus compensating equalities (14) having a process independence. 同时为了保证VREF大于0,要求Kr大于0,因此要求用于温度补偿的电阻的温度系数为正值。 Meanwhile, in order to ensure that VREF is greater than 0, greater than 0 Kr required, thus requiring the temperature coefficient of resistance is positive for temperature compensation.

[0062] 表1所示为在某工艺下输出时钟频率的温度系数。 [0062] Table 1 shows the frequency of the output clock at a certain process temperature coefficient.

Figure CN103795344AD00064

[0064] 可见其一阶温度系数被完全抵消,在-40C。 [0064] First order temperature coefficients are seen completely canceled at -40C. ~85C。 ~ 85C. 的温度范围,二阶温度系数为IOOppm ;同时时钟占空比在输出时钟频率大于IOMHz时,仍然在49%以上。 Temperature range, the temperature coefficient of second order IOOppm; clock simultaneously when the output duty cycle is greater than 10 MHz clock frequency, is still more than 49%.

[0065] 表2所示为输出时钟频率温度系数随不同工艺角的变化结果。 [0065] TABLE temperature coefficient of frequency of the output clock changes with the results shown in FIG. 2 of different process corners.

[0066] [0066]

Figure CN103795344AD00071

[0067] 由上表可见在5种极端工艺角下温度系数都在IOOppm附近,验证了本发明所提出的具有温度补偿结构的振荡器补偿效果随工艺变化小的优点。 [0067] In the above table shows five kinds of extreme process temperatures angular coefficients near IOOppm, to verify that the proposed compensation effect of the present invention is an oscillator with temperature compensation structure with the advantages of small changes in the process.

[0068] 总之,以上所述仅为本发明的较佳实施例而已,并不用以限制本发明,凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等,均应包含在本发明的保护范围之内。 [0068] In summary, the above description is only preferred embodiments of the present invention but are not intended to limit the present invention, any modifications within the spirit and principle of the present invention, equivalent substitutions and improvements should be included within the scope of the present invention.

Claims (6)

1.一种带有温度补偿的振荡器电路,其特征在于该振荡器电路包括: 一个参考电流产生电路,用于产生一个具有一阶正温度系数Ki的电流IREF ; 一个基准源,用于提供一基准电压VREF ; 一个VH电压产生电路,提供一具有一阶正温度系数Kv的电压VH ; 一个电压相加电路,用于将基准电压和VH电压相加,产生一个阈值电压VT ; 一个充放电控制单元,其以阈值电压VT作为充放电阈值,控制电流IREF对电容C在阈值电压和地之间进行充放电,当电容C充电至上述阈值电压时,触发逻辑输出反转,周而复始。 An oscillator with a temperature compensation circuit, characterized in that the oscillator circuit comprises: a reference current generating circuit for generating a first order having a positive temperature coefficient Ki, the IREF current; a reference source for providing a reference voltage of the VREF; a VH voltage generating circuit having a first order to provide a positive temperature coefficient Kv voltage VH; a voltage addition circuit for summing the reference voltage and the voltage VH, the VT generating a threshold voltage; a charge-discharge a control unit, which is the threshold voltage VT of the charge and discharge threshold, the control current IREF of the capacitor C is charged and discharged between a threshold voltage and, when the capacitor C is charged to the threshold voltage, trigger logic output inversion cycle.
2.如权利要求1所述的带有温度补偿的振荡器电路,其特征在于所述参考电流产生电路为带隙基准电压源,IREF电流由带隙基准电压源产生;带隙基准电压源串联两个分压电阻Rl、R2,VREF由带隙基准电压源输出电压通过分压电阻Rl,R2产生;VH电压产生电路是由电阻R3构成,VH是通过IREF流经电阻R3产生;电压相加电路是由缓冲寄存器构成,VT则由电压相加电路产生,其是将VREF通过缓冲寄存器之后接至R3的低电位端,因此VT=VH+VREF ;充放电控制单元由五个MOS管,电容C1、C2,比较器,RS触发器组成,其中一个MOS管接于电源输入端,四个MOS管分成两组并联在上述接于电源输入端的MOS管上;电容Cl、C2分别接在每组MOS管上:每组MOS管后接有比较器和RS触发器。 2. The oscillator circuit with temperature compensation according to claim 1, wherein the reference current generating circuit is a bandgap reference voltage source, the IREF current is generated by a bandgap reference voltage source; bandgap reference voltage source connected in series two resistors Rl, R2, VREF band gap reference voltage source the output voltage dividing resistors Rl, R2 is generated; the VH voltage generating circuit is composed of a resistor R3, VH is generated by IREF flowing through the resistor R3; voltage addition circuit is composed of a buffer register, VT generated by a voltage addition circuit which is connected to the low potential after R3 VREF through the buffer register, so VT = VH + VREF; discharge control means consists of five MOS transistor, capacitor C1, C2, a comparator, RS flip-flop, wherein a MOS transistor connected to the power input terminal, into two four MOS transistors connected in parallel to MOS transistor connected to said power supply input; capacitors Cl, C2 are connected to each on the MOS transistor: the MOS transistor is connected with a comparator and RS flip-flop group.
3.如权利要求2所述的带有温度补偿的振荡器电路,其特征在于上述带有温度补偿的振荡器电路,其VH电压产生电路是由电阻R3和带隙基准电阻R4为同一类型电阻,具有正温度系数Kr。 3. The oscillator circuit as claimed in temperature compensation with the same type of resistor in claim 2, wherein said oscillator circuit with a temperature compensation voltage generating circuit which is composed of VH resistor R3 and the resistor R4 is bandgap reference having a positive temperature coefficient Kr.
4.如权利要求1所述的带有温度补偿的振荡器电路,其特征在于该振荡器电路输出的逻辑信号就是振荡器的输出时钟。 4. The oscillator circuit with temperature compensation according to claim 1, wherein the logic signal is the output of the oscillator circuit output clock oscillator.
5.如权利要求1所述的带有温度补偿的振荡器电路,其特征在于IREF —阶温度系数Ki为: 5. The oscillator circuit with temperature compensation according to claim 1, characterized in that IREF - order temperature coefficient Ki is:
Figure CN103795344AC00021
Kr为带隙基准电压源中电阻R4的一阶正温度系数,TO参考温度,如室温300K ;Ki 一般大于0,即Kr〈l/T0。 Kr is a positive first order temperature coefficient of the bandgap voltage reference resistor R4, TO reference temperature, such as room temperature, 300K; Ki generally greater than 0, i.e., Kr <l / T0. 电压VH的温度系数Kv为: Temperature coefficient Kv voltage VH is:
Figure CN103795344AC00022
6.如权利要求5所述的带有温度补偿的振荡器电路,其特征在于当调节VREF使之满足下列 6. The oscillator circuit with temperature compensation according to claim 5, characterized in that when VREF adjusted so as to satisfy the following
Figure CN103795344AC00023
条件时,振荡器输出时钟频率的一阶温度系数为0,实现了温度补偿,其中Kr为电阻的一阶正温度系数。 The condition, the first order temperature coefficient of the oscillator output clock frequency is 0, to achieve a temperature compensation, wherein Kr is a positive first-order temperature coefficient of resistance.
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TW409452B (en) * 1998-04-14 2000-10-21 Utron Technology Inc Spontaneously frequency generating circuit
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